CN115064609A - Solar cell preparation method, solar cell and cell module - Google Patents

Solar cell preparation method, solar cell and cell module Download PDF

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Publication number
CN115064609A
CN115064609A CN202210795202.4A CN202210795202A CN115064609A CN 115064609 A CN115064609 A CN 115064609A CN 202210795202 A CN202210795202 A CN 202210795202A CN 115064609 A CN115064609 A CN 115064609A
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China
Prior art keywords
conductive pattern
solar cell
conductive
pattern
forming
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CN202210795202.4A
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Chinese (zh)
Inventor
薛朝伟
魏超锋
李�杰
孙士洋
方亮
魏俊喆
曲铭浩
徐希翔
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Longi Green Energy Technology Co Ltd
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Longi Green Energy Technology Co Ltd
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Priority to CN202210795202.4A priority Critical patent/CN115064609A/en
Publication of CN115064609A publication Critical patent/CN115064609A/en
Priority to PCT/CN2023/106350 priority patent/WO2024008183A1/en
Priority to CN202310835085.4A priority patent/CN116936676A/en
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System

Abstract

The invention provides a solar cell preparation method, a solar cell and a cell module, and relates to the technical field of photovoltaics. The method comprises the following steps: forming a first conductive pattern or a first conductive film layer on the solar cell body; forming a second conductive pattern on the imprint template; forming a third conductive pattern between the second conductive pattern and the first conductive pattern in an electroplating or chemical plating way, and connecting the second conductive pattern and the first conductive pattern together through the third conductive pattern; or forming a third conductive pattern between the second conductive pattern and the region of the first conductive film layer where the electrode is to be formed in an electroplating or chemical plating manner, and connecting the second conductive pattern and the region of the first conductive film layer where the electrode is to be formed together through the third conductive pattern; the imprint template is removed. The second conductive pattern is prepared on the imprinting template, so that the influence on the solar cell body can be reduced, the mass production is easy to realize, the process is simple and mature, and the preparation cost can be reduced.

Description

Solar cell preparation method, solar cell and cell module
Technical Field
The invention relates to the technical field of photovoltaics, in particular to a solar cell preparation method, a solar cell and a cell module.
Background
Generally, there are three main requirements for electrodes of solar cells: high carrier collection efficiency, low preparation cost and good reliability.
However, in the prior art, the electrode of the solar cell is prepared mainly by the following two methods: firstly, screen printing, the screen printing technology is mature, but in the screen printing, the electrode material needs to use noble metal silver, which results in higher cost. And secondly, laser transfer printing, wherein after silver paste is formed on the light-transmitting film layer and dried, laser is used for irradiating a local area of the light-transmitting film layer, the irradiated silver paste is separated from the light-transmitting film layer and falls on an area of the solar cell body where an electrode is to be formed, and the electrode is formed. In laser transfer printing, the light-transmitting film layer cannot be reused, and silver paste remains on the light-transmitting film layer, so that the cost of laser transfer printing is still high; meanwhile, the matching difficulty of the light-transmitting film layer and the laser process is high, for example, in the process of matching the light-transmitting film layer and the laser process, because silver pastes with different proportions have differences in solvent evaporation capacity, adhesive force between the paste and the carrier plate and the like, the parameters of the laser are required to be adjusted for the silver paste for multiple times, so that the silver paste and the laser power can be well matched, the laser transfer process is high in difficulty, and the production efficiency is low.
Disclosure of Invention
The invention provides a solar cell preparation method, a solar cell and a cell module, and aims to solve the problem that the preparation cost of an electrode of the solar cell is high.
In a first aspect of the present invention, a method for manufacturing a solar cell is provided, including:
forming a first conductive pattern or a first conductive film layer on the solar cell body;
forming a second conductive pattern on the imprint template;
aligning the second conductive pattern with the first conductive pattern, forming a third conductive pattern between the second conductive pattern and the first conductive pattern by electroplating or chemical plating, and connecting the second conductive pattern with the first conductive pattern through the third conductive pattern; or aligning the second conductive pattern with the region of the first conductive film layer where the electrode is to be formed, forming a third conductive pattern between the second conductive pattern and the region of the first conductive film layer where the electrode is to be formed by electroplating or chemical plating, and connecting the second conductive pattern with the region of the first conductive film layer where the electrode is to be formed by the third conductive pattern; removing the imprinting template;
the forming a first conductive film layer on the solar cell body, after the removing the imprint template, the method further comprises: and removing the part of the first conductive film layer except the region where the electrode is to be formed to form a first conductive pattern.
In the invention, the second conductive pattern is prepared on the imprinting template instead of the solar cell body, and the preparation process of the second conductive pattern has little or no influence on the solar cell body. Meanwhile, the electroplating or chemical plating has the characteristics of low bonding temperature and high bonding strength, and the low bonding temperature can ensure that the solar cell body is less influenced by heat and has little influence on the photoelectric conversion efficiency of the solar cell. The high bonding strength can make the reliability of the electrodes of the solar cell good. Compared with screen printing, the material of the second conductive pattern, the first conductive film layer or the first conductive pattern of the invention is conductive, and is not limited to silver paste, so that the cost can be properly reduced. The third conductive pattern may be formed by electroplating, i.e., has conductivity, and is not limited to silver paste, so that cost can be appropriately reduced. Compared with laser transfer printing, the laser transfer printing method has the advantages that the second conductive patterns and the first conductive patterns are connected together through the third conductive patterns formed through electroplating or chemical plating, or the second conductive patterns and the third conductive patterns formed through electroplating or chemical plating in the regions of the first conductive film layer where the electrodes are to be formed are connected together, the electroplating or chemical plating process is mature, and the parameters of laser do not need to be adjusted for multiple times, so that the process difficulty is relatively low, and the production efficiency can be properly improved.
Optionally, before electroplating or electroless plating, the method further comprises: annealing the imprint template on which the second conductive pattern is formed, so that the second conductive pattern is recrystallized.
Optionally, before forming the first conductive pattern or the first conductive film layer on the solar cell body, the method further includes:
forming a bonding pattern or a bonding film layer on the solar cell body; the bonding pattern or the bonding film layer is used for improving the bonding force between the first conductive pattern or the first conductive film layer and the solar cell body;
the forming of the first conductive pattern or the first conductive film layer on the solar cell body includes:
forming the first conductive pattern or the first conductive film layer on the bonding pattern or the bonding film layer;
the method further comprises the following steps of forming an adhesive film layer on the solar cell body, and after removing the imprinting template: and removing the part of the bonding film layer except the region where the electrode is to be formed to form the bonding pattern.
Optionally, the imprint template comprises a first groove; the forming a second conductive pattern on the imprint template includes: forming the second conductive pattern in the first groove of the imprinting template;
the second conductive patterns are flush with the surface of the side, provided with the first groove, of the imprinting template, or protrude from the surface of the side, provided with the first groove, of the imprinting template.
Optionally, the imprint template includes a substrate, the first groove is disposed on the substrate, and the imprint template further includes a first boss disposed on the substrate and located at an edge of the first groove; the forming of the second conductive pattern in the first groove of the imprint template includes:
forming the second conductive pattern in the first groove and in an area defined by the first boss;
the second conductive pattern is flush with the surface of the first boss far away from the substrate, or protrudes from the surface of the first boss far away from the substrate.
Optionally, the area of the cross section of the first groove gradually decreases along the direction from the notch of the first groove to the groove bottom; wherein the cross section is perpendicular to a stacking direction of the third conductive pattern and the second conductive pattern.
Optionally, the imprint template comprises a substrate and a second boss on the substrate;
the forming a second conductive pattern on the imprint template includes:
and forming a second conductive film layer on one side of the imprinting template on which the second boss is formed, wherein the second conductive pattern is a part of the second conductive film layer, which is located on the second boss.
Optionally, a surface of the second boss away from the substrate is a plane; or one side, far away from the substrate, of the second boss comprises a second groove, wherein the second conductive pattern is flush with a notch of the second groove, or protrudes out of the second groove.
Optionally, the imprint template includes a substrate, and the forming of the second conductive pattern on the imprint template includes:
and laying a metal foil on the substrate, and patterning the metal foil to form the second conductive pattern.
Optionally, before forming the second conductive pattern on the imprint template, the method further comprises:
providing a plurality of metal foil patterns;
the imprinting template comprises a plurality of adsorption areas; the forming a second conductive pattern on the imprint template includes: and at least aligning one adsorption area with one metal foil pattern, and adsorbing the metal foil pattern on the adsorption area to form the second conductive pattern.
In a second aspect of the present invention, there is provided a solar cell comprising:
a solar cell body;
and a first conductive pattern and a second conductive pattern which are stacked on the solar cell body;
wherein the second conductive pattern and the first conductive pattern are connected together by the third conductive pattern; the grain size of the third conductive pattern increases from a portion near the first conductive pattern to the middle region, and increases from a portion near the second conductive pattern to the middle region.
Optionally, the third conductive pattern is close to the solar cell body relative to the second conductive pattern;
in the direction far away from the solar cell body, the area of the cross section of the second conductive pattern or a partial region far away from the solar cell body in the second conductive pattern is gradually reduced; wherein the cross section is perpendicular to a stacking direction of the third conductive pattern and the second conductive pattern.
Optionally, the shape of a longitudinal cross section of the second conductive pattern or a partial region of the second conductive pattern away from the solar cell body is a triangle, a trapezoid, or a graph formed by a segment of an arc and a line segment connecting two end points of the arc, where the length of the line segment is less than or equal to the diameter of a circle corresponding to the arc; wherein the longitudinal section is parallel to a lamination direction of the third conductive pattern and the second conductive pattern.
Optionally, the solar cell further includes: and the bonding pattern is arranged between the first conductive pattern and the solar cell body and is used for improving the bonding force between the first conductive pattern and the solar cell body.
Optionally, in the stacking direction of the third conductive pattern and the second conductive pattern, the second conductive pattern is composed of at least two layers of second conductive sub-patterns stacked.
In a third aspect of the present invention, there is provided another method for manufacturing a solar cell, including:
forming a second conductive pattern on the imprinting template;
aligning the second conductive pattern with a region of the solar cell body where an electrode is to be formed, forming a third conductive pattern between the second conductive pattern and the region of the solar cell body where the electrode is to be formed by electroplating or electroless plating, and connecting the second conductive pattern with the region of the solar cell body where the electrode is to be formed by the third conductive pattern;
and removing the imprinting template.
Optionally, before electroplating or electroless plating, the method further comprises: annealing the imprint template on which the second conductive pattern is formed, so that the second conductive pattern is recrystallized.
Optionally, the imprint template comprises a first groove; the forming a second conductive pattern on the imprint template includes: forming the second conductive pattern in the first groove of the imprinting template;
the second conductive pattern is flush with the surface of the side, provided with the first groove, of the imprinting template, or protrudes out of the surface of the side, provided with the first groove, of the imprinting template.
Optionally, the imprint template includes a substrate, the first groove is disposed on the substrate, and the imprint template further includes a first boss disposed on the substrate and located at an edge of the first groove; the forming of the second conductive pattern in the first groove of the imprint template includes:
forming the second conductive pattern in the first groove and in an area defined by the first boss;
the second conductive pattern is flush with the surface of the first boss far away from the substrate, or protrudes out of the surface of the first boss far away from the substrate.
Optionally, the area of the cross section of the first groove gradually decreases along the direction from the notch of the first groove to the groove bottom; wherein the cross section is perpendicular to a stacking direction of the second conductive pattern and the third conductive pattern.
Optionally, the imprint template comprises a substrate and a second boss on the substrate;
the forming a second conductive pattern on the imprint template includes:
and forming a second conductive film layer on one side of the imprinting template on which the second boss is formed, wherein the second conductive pattern is a part of the second conductive film layer, which is located on the second boss.
Optionally, a surface of the second boss away from the substrate is a plane; or one side of the second boss, which is far away from the substrate, comprises a second groove, wherein the second conductive pattern is flush with a notch of the second groove, or protrudes out of the second groove.
Optionally, the imprint template includes a substrate, and the forming a second conductive pattern on the imprint template includes:
and laying a metal foil on the substrate, and patterning the metal foil to form the second conductive pattern.
Optionally, before forming the second conductive pattern on the imprint template, the method further comprises:
providing a plurality of metal foil patterns;
the imprinting template comprises a plurality of adsorption areas; the forming a second conductive pattern on the imprint template includes: and at least aligning one adsorption area with one metal foil pattern, and adsorbing the metal foil pattern on the adsorption area to form the second conductive pattern.
In a fourth aspect of the present invention, there is provided another solar cell, comprising:
a solar cell body;
and a second conductive pattern and a third conductive pattern disposed on the solar cell body;
wherein the second conductive pattern is connected to the solar cell body through the third conductive pattern; the grain size of the third conductive pattern increases from a portion near the solar cell body to the middle region, and increases from a portion near the second conductive pattern to the middle region.
Optionally, in a direction away from the solar cell body, the area of the cross section of the second conductive pattern or a partial region of the second conductive pattern away from the solar cell body is gradually reduced; wherein the cross section is perpendicular to a stacking direction of the second conductive pattern and the third conductive pattern.
Optionally, the shape of a longitudinal section of the second conductive pattern or a partial region of the second conductive pattern away from the solar cell body is a triangle, a trapezoid, or a figure formed by a segment of an arc and a line segment connecting two end points of the arc, and the length of the line segment is less than or equal to the diameter of a circle corresponding to the arc; wherein the longitudinal section is parallel to a lamination direction of the second conductive pattern and the third conductive pattern.
Optionally, in the stacking direction of the third conductive pattern and the second conductive pattern, the second conductive pattern is composed of at least two layers of second conductive sub-patterns stacked.
In a fifth aspect of the present invention, a battery module is provided, which includes a first packaging adhesive film, a solar battery string, and a second packaging adhesive film stacked in sequence; the solar cell string is formed by sequentially connecting a plurality of solar cells in series;
wherein the solar cell is as described above.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a battery assembly according to an exemplary embodiment of the present invention;
fig. 2 is a schematic structural diagram of a first HJT solar cell according to an exemplary embodiment of the present invention;
fig. 3 is a schematic structural diagram of an HBC solar cell according to an exemplary embodiment of the present invention;
fig. 4 is a schematic structural diagram of a second HJT solar cell according to an exemplary embodiment of the present invention;
fig. 5 is a schematic structural diagram of a third HJT solar cell according to an exemplary embodiment of the present invention;
fig. 6 is a schematic structural diagram of a fourth HJT solar cell according to an exemplary embodiment of the present invention; fig. 7 is a flowchart illustrating steps of a method for manufacturing a solar cell according to an exemplary embodiment of the present invention;
fig. 8 is a schematic partial structure diagram of a first HBC solar cell exemplarily provided according to an embodiment of the present invention;
fig. 9 is a schematic partial structure diagram of a second HBC solar cell exemplarily provided according to an embodiment of the present invention;
fig. 10 is a schematic partial structure diagram of a first method for forming a second conductive pattern according to an embodiment of the present invention;
fig. 11 is a schematic partial structure diagram of a second method for forming a second conductive pattern according to an embodiment of the present invention;
fig. 12 is a schematic view of a partial structure of a third forming second conductive pattern exemplarily provided by the embodiment of the invention;
fig. 13 is a schematic partial structure diagram of a fourth method for forming a second conductive pattern according to an embodiment of the invention;
fig. 14 is a schematic partial structure diagram of a fifth method for forming a second conductive pattern according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram illustrating alignment of a second conductive pattern with an area to be formed with an electrode in a first conductive film layer according to an exemplary embodiment of the present invention;
fig. 16 is an enlarged partial structural view illustrating alignment of a second conductive pattern with an area of a first conductive film layer where an electrode is to be formed according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of a third conductive film layer plated or electrolessly plated between the second conductive pattern and a region of the first conductive film layer where an electrode is to be formed according to an exemplary embodiment of the present invention;
fig. 18 is a schematic partial enlarged structural view illustrating a third conductive film layer is electroplated or electrolessly plated between the second conductive pattern and a region of the first conductive film layer where an electrode is to be formed according to an exemplary embodiment of the present invention;
FIG. 19 is a schematic diagram of an imprint template removal structure according to an embodiment of the present invention;
FIG. 20 is an enlarged partial schematic view of an imprint template removal system according to an exemplary embodiment of the present invention;
FIG. 21 is a schematic diagram of a first imprint template exemplarily provided by an embodiment of the present invention;
FIG. 22 is a schematic diagram of a second imprint template exemplarily provided by an embodiment of the present invention;
FIG. 23 is a schematic diagram of a third imprint template exemplarily provided by an embodiment of the present invention;
fig. 24 is a schematic structural diagram of a fourth HJT solar cell according to an exemplary embodiment of the present invention;
fig. 25 is a flowchart illustrating steps of another method for manufacturing a solar cell according to an exemplary embodiment of the present invention.
Reference numerals:
1-solar cell string, 2-first packaging adhesive film, 3-second packaging adhesive film, 4-transparent cover plate, 5-back plate, 101-substrate, 102-first boss, 103-first groove, 104-second conductive film layer, second conductive pattern, 1041, 1042, 1043-second conductive pattern, 1044-metal wire, 1045-coating, 202-second boss, 311-first conductive pattern or first conductive film layer, 321-third conductive pattern or third conductive film layer, 322-bonding pattern or bonding film layer, 301-front TCO film, 302-N type hydrogen doped amorphous silicon/microcrystalline silicon oxide passivation layer, 303-front intrinsic amorphous silicon passivation layer, 304-front intrinsic amorphous silicon substrate buffer layer, 305-back intrinsic amorphous silicon buffer layer, 306-back intrinsic amorphous silicon buffer layer, 307-back intrinsic amorphous silicon passivation layer, 308-P type amorphous silicon emitter, 309-back TCO film, 401-front silicon nitride layer, 402-front n layer, 403-front i layer, 405-back i layer, 406-n type layer, 408-P type layer, 409-isolation layer, 3051-P type doped region.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
Fig. 1 is a schematic structural diagram of a battery assembly according to an exemplary embodiment of the present invention. An embodiment of the invention provides a battery module, as shown in fig. 1, the battery module includes a first packaging adhesive film 2, a solar battery string 1 and a second packaging adhesive film 3, which are sequentially stacked, wherein the solar battery string 1 includes a plurality of solar batteries sequentially connected in series. In some examples, the first and second encapsulant films 1 and 3 may be EVA (ethylene-vinyl acetate copolymer) films.
Referring to fig. 1, in some examples, the battery assembly may further include: the transparent cover plate 4 is arranged on one side, far away from the solar cell string 1, of the first packaging adhesive film 2; and/or the back plate 5 is arranged on one side of the second packaging adhesive film 3 far away from the solar cell string 1.
The embodiment of the invention also provides a solar cell, which can be applied to the above cell module, and specifically, the solar cell is applied to the above solar cell string. The type of the solar Cell is not limited in the present invention, and the solar Cell may be, for example, an HJT (Hetero-Junction with Intrinsic Thin-layer) solar Cell, an SHJ (Silicon Hetero-Junction solar Cell), an IBC (interdigitated back Contact) solar Cell, a TOPcon (Tunnel Oxide Passivated Contact) solar Cell, a PERC (Passivated emitter and back solar Cell), or the like.
Fig. 2 is a schematic structural diagram of a first HJT solar cell according to an exemplary embodiment of the present invention. Fig. 3 is a schematic structural diagram of an HBC solar cell according to an exemplary embodiment of the present invention. Fig. 4 is a schematic structural diagram of a second HJT solar cell according to an exemplary embodiment of the present invention. Fig. 5 is a schematic structural diagram of a third HJT solar cell according to an exemplary embodiment of the present invention. Fig. 6 is a schematic structural diagram of a fourth HJT solar cell according to an exemplary embodiment of the present invention.
As shown in fig. 2, 3, 4, 5, and 6, the solar cell includes a solar cell body, and a positive electrode and a negative electrode provided on the solar cell body. Based on this, it is understood that, in the solar cell, the other portions than the positive electrode and the negative electrode may be regarded as a solar cell body. The structure of the solar cell body is different for different types of solar cells, and the following description is given by way of two examples.
For example, in the case that the solar cell is an HJT solar cell, as shown in fig. 2, 4, 5 and 6, the HJT solar cell may include a front TCO (Transparent conductive oxide) 301, an N-type hydrogen-doped amorphous silicon/microcrystalline silicon oxide passivation layer 302, a front intrinsic amorphous silicon passivation layer 303, a front intrinsic amorphous silicon buffer layer 304, a silicon substrate 305, a back intrinsic amorphous silicon buffer layer 306, a back intrinsic amorphous silicon passivation layer 307, a P-type amorphous silicon emitter 308, a back TCO309, and a negative electrode disposed on the front TCO301 and a positive electrode disposed on the back TCO309, which are sequentially stacked. The front TCO301, the N-type hydrogen-doped amorphous silicon/microcrystalline silicon oxide passivation layer 302, the front intrinsic amorphous silicon passivation layer 303, the front intrinsic amorphous silicon buffer layer 304, the silicon substrate 305, the back intrinsic amorphous silicon buffer layer 306, the back intrinsic amorphous silicon passivation layer 307, the P-type amorphous silicon emitter 308, and the back TCO309, which are sequentially stacked, may be a solar cell body of an HJT solar cell.
Second, in the case where the solar cell is an HBC (Heterojunction back contact) solar cell, as shown in fig. 3, the HBC solar cell may include, for example, a front surface silicon nitride layer 401, a front surface n layer 402, a front surface i layer 403, a silicon substrate 305, a back surface i layer 405, an n-type layer 406, a p-type layer 408, an isolation layer 409, a back surface TCO309, and a positive electrode disposed on the p-type layer 408 and a negative electrode disposed on the n-type layer 406. The front side silicon nitride layer 401, the front side n layer 402, the front side i layer 403, the silicon substrate 305, the back side i layer 405, the n-type layer 406, the p-type layer 408, the isolation layer 409, and the back side TCO309 may be considered as a solar cell body of the HBC solar cell.
In the solar cell, the positive electrode and the negative electrode may be located on the same side of the solar cell body, or may be respectively disposed on two opposite sides of the solar cell body.
Several examples are provided below to describe the structure and fabrication method of a solar cell.
Example one
The first embodiment provides a solar cell, which, with reference to fig. 2, 3, 4 and 6, includes a solar cell body, and a positive electrode and a negative electrode disposed on the solar cell body; the structure of the positive electrode and the structure of the negative electrode can be the same or different. The electrode (which may be a positive electrode or a negative electrode) of the solar cell includes: a first conductive pattern 311, a third conductive pattern 321, and a second conductive pattern 104 sequentially stacked on the solar cell body; wherein the first conductive pattern 311 and the second conductive pattern 104 are connected together by the third conductive pattern 321. The grain size of the third conductive pattern 321 increases from a portion near the first conductive pattern 311 to the middle region and increases from a portion near the second conductive pattern 104 to the middle region, that is, the first conductive pattern 311 and the second conductive pattern 104 both serve as cathodes, and the third conductive pattern 321 is grown on the second conductive pattern 104 and the first conductive pattern 311 by electroplating or electroless plating. The third conductive pattern 321 is formed by connecting a portion formed by electroplating or electroless plating with the second conductive pattern 104 as a cathode and a portion formed by electroplating or electroless plating with the first conductive pattern 311 as a cathode. The grain size of the portion of the third conductive pattern 321 near the cathode is smaller, and the grain size of the portion far from the cathode is larger. The specific value of the grain size of the portion near the cathode is not limited. The specific value of the grain size of the portion away from the cathode is not limited. The difference between the grain size of the portion away from the cathode and the grain size of the portion close to the cathode is also not particularly limited. The topography of the surface of the third conductive pattern 321 proximate to the first conductive pattern 311 continues the topography of the first conductive pattern 311 proximate to the third conductive pattern 321. The topography of the surface of the third conductive pattern 321 proximate to the second conductive pattern 104 continues the topography of the second conductive pattern 104 proximate to the third conductive pattern 321.
For example, for a bifacial cell, the electrodes may be located on the light-facing side or the backlight side of the solar cell body. For back contact solar cells, the electrodes may be located on the backlight side of the solar cell body. It is understood that the portion of the solar cell body in contact with the first conductive pattern can be conductive, for example, the portion of the solar cell body in contact with the first conductive pattern can be TCO; or the portion of the solar cell body in contact with the first conductive pattern may be a doped layer. For another example, if a passivation layer is formed on the surface of the solar cell body, the portion of the solar cell body in contact with the first conductive pattern is a groove formed in the passivation layer, and the conductive layer is exposed.
The first conductive pattern 311 and the second conductive pattern 104 are connected together by the third conductive pattern 321 formed by electroplating or electroless plating, which is simple and mature in electroplating or electroless plating process and easy to realize mass production. Meanwhile, the electroplating or chemical plating has the characteristics of low bonding temperature and high bonding strength, and the low bonding temperature can ensure that the solar cell body is less influenced by heat and has little influence on the photoelectric conversion efficiency of the solar cell. The high bonding strength can make the reliability of the electrodes of the solar cell good. The second conductive patterns 104 and the first conductive patterns 311 may be made of conductive materials, which are not limited to silver paste, and have high material selectivity, and the cost may be appropriately reduced by selecting, for example, copper, tin, and the like, compared to silver paste. In addition, the silver paste is granular, so that the contact among the silver particles is less, the silver paste contains organic components, the organic components can also influence the contact among the silver particles, the resistivity of the silver paste electrode is higher, and the conductivity is poor. In addition, since the second conductive pattern 104 may not be formed on the solar cell body, the formation process of the second conductive pattern has little or no influence on the solar cell body, and mass production is easily achieved, and the production cost can be reduced.
The materials of the first conductive pattern 311, the third conductive pattern 321, and the second conductive pattern 104 are only required to be conductive, and the materials of the first conductive pattern 311, the third conductive pattern 321, and the second conductive pattern 104 are not particularly limited.
It should be noted that fig. 2 and 3 are different mainly in the structure of the solar cell body and the shape of the second conductive pattern 104. The difference between fig. 2 and fig. 4 is mainly in the shape of the second conductive pattern 104.
Optionally, the first conductive pattern 311 and the second conductive pattern 104 may be both low-temperature conductive materials. For example, the first conductive pattern 311 and the second conductive pattern 104 may be at least one of the following eight low-temperature conductive materials: the melting point of the first low-temperature conductive material is 98 ℃, and the first low-temperature conductive material comprises the following components: 50% by mass of bismuth (Bi), 25% by mass of lead (Pb) and 25% by mass of tin (Sn). The melting point of the second low-temperature conductive material is 74 ℃, and the composition components are as follows: 42.5% by mass of bismuth (Bi), 37.7% by mass of lead (Pb), 11.3% by mass of tin (Sn) and 8.5% by mass of cadmium (Cd). The melting point of the third low-temperature conductive material is 70 ℃, and the composition components are as follows: 50% by mass of bismuth (Bi), 26.7% by mass of lead (Pb), 13.3% by mass of tin (Sn) and 10% by mass of cadmium (Cd). The melting point of the fourth low-temperature conductive material is 62 ℃, and the fourth low-temperature conductive material comprises the following components: 32.5% by mass of bismuth (Bi), 16.5% by mass of tin (Sn) and 51% by mass of indium (In). The melting point of the fifth low-temperature conductive material is 58 ℃, and the composition components are as follows: bismuth (Bi) In a mass ratio of 49%, lead (Pb) In a mass ratio of 18%, tin (Sn) In a mass ratio of 12%, and indium (In) In a mass ratio of 21%. The melting point of the sixth low-temperature conductive material is 47.2 ℃, and the composition components are as follows: 44.7% by mass of bismuth (Bi), 22.6% by mass of lead (Pb), 8.3% by mass of tin (Sn), 19.1% by mass of indium (In), and 5.3% by mass of cadmium (Cd). The melting point of the seventh low-temperature conductive material is 41.5 ℃, and the composition components are as follows: bismuth (Bi) with a mass ratio of 40.3%, lead (Pb) with a mass ratio of 22.2%, tin (Sn) with a mass ratio of 10.7%, indium (In) with a mass ratio of 17.7%, cadmium (Cd) with a mass ratio of 8.1%, and Thallium (TI) with a mass ratio of 1.1%. The melting point of the eighth low-temperature conductive material is 30.0 ℃, and the composition components are as follows: gallium (Ga) in a mass proportion of 100%.
Alternatively, as shown in fig. 2 to 4 or 6, the third conductive pattern 321 is close to the solar cell body with respect to the second conductive pattern 104. In fig. 2, the direction indicated by the dashed arrow L1 is: in a direction away from the solar cell body. The area of the cross section of the partial region of the second conductive pattern 104 away from the solar cell body is gradually reduced in the direction away from the solar cell body, and the cross section is perpendicular to the stacking direction of the third conductive pattern 321 and the second conductive pattern 104, that is, the area of the cross section of the partial region of the second conductive pattern 104 away from the solar cell body is smaller as the distance from the third conductive pattern 321 is increased, which is favorable for reducing reflection and shading and can increase the photoelectric conversion efficiency of the solar cell.
Referring to fig. 2, in some examples, the second conductive pattern 104 includes a second conductive sub-pattern 1041 and a second conductive sub-pattern 1042 arranged in a stack, the second conductive sub-pattern 1042 being close to the third conductive pattern 321 with respect to the second conductive sub-pattern 1041. The area of the cross section of the second conductive pattern 104 is gradually reduced in a direction away from the solar cell body, having the effects of reducing reflection and blocking light. Or, in the direction away from the solar cell body, the cross-sectional areas of the second conductive sub-patterns 1042 in the second conductive patterns 104 close to the third conductive patterns 321 are equal, the cross-sectional areas of the second conductive sub-patterns 1041 in the second conductive patterns 104 away from the third conductive patterns 321 are gradually reduced, and the second conductive sub-patterns 1041 have the functions of reducing reflection and shielding light.
Optionally, the shape of the longitudinal section of the second conductive pattern 104 or a partial region of the second conductive pattern 104 away from the solar cell body is a triangle, a trapezoid, or a figure formed by a circular arc and a line segment connecting two end points of the circular arc, the length of the line segment is less than or equal to the diameter of a circle corresponding to the circular arc, and the longitudinal section is parallel to the stacking direction of the third conductive pattern 321 and the second conductive pattern 104. If the length of the line segment is equal to the diameter of the circle corresponding to the circular arc, the shape of the longitudinal section of the second conductive pattern 104 or the partial region of the second conductive pattern 104 away from the solar cell body is a semicircle, and the shape of the partial region of the second conductive pattern 104 or the second conductive pattern 104 away from the solar cell body is a semicircle. If the length of the line segment is smaller than the diameter of the circle corresponding to the circular arc, the circular arc is a minor arc of the circle corresponding to the circular arc.
For example, in fig. 2, a longitudinal cross section of a second conductive sub-pattern 1041 of the second conductive pattern 104 far from the solar cell body is triangular, and a longitudinal cross section of a second conductive sub-pattern 1042 of the second conductive pattern 104 near the solar cell body is rectangular. The shape of the longitudinal section of the second conductive pattern 104 is a pattern formed by splicing a rectangle and a triangle, the base of the triangle coincides with one side of the rectangle, and the opposite corner of the base is located on the side of the second conductive pattern 104 far away from the third conductive pattern 321.
Optionally, referring to fig. 6, the electrode of the solar cell further includes: and the bonding pattern 322 is located between the first conductive pattern 311 and the solar cell body, and the bonding pattern 322 is used for improving the bonding force between the first conductive pattern 311 and the solar cell body, so that the reliability of the electrode is better. The shape of the adhesive pattern 322 may be the same as or similar to the shape of the first conductive pattern 311. The material of the bonding pattern 322 may be selected from: at least one of titanium, chromium, copper, nickel, lead, tin, titanium nitride, titanium tungsten and silver, and the bonding pattern 322 of the above materials has a strong bonding force with the solar cell body, thereby indirectly improving the bonding force between the first conductive pattern 311 and the solar cell body. It should be noted that the bonding pattern 322 may also have a single-layer structure or a multi-layer structure, and as shown in fig. 6, the bonding pattern 322 has a single-layer structure.
Optionally, the thickness of the bonding pattern 322 may be 1 to 50nm, the thickness direction is parallel to the stacking direction of the third conductive pattern 321 and the second conductive pattern 104, and the thickness of the bonding pattern 322 is within the range, so that the bonding force between the first conductive pattern 311 and the solar cell body is improved well, and the cost is low. For example, the bonding pattern 322 may be a 10nm titanium bonding pattern 322.
In some examples, the thickness of the bonding pattern 322 may be, for example, 1nm, 10nm, 20nm, 30nm, 40nm, or 50 nm.
Optionally, the thickness of the second conductive pattern 104 is 5-50um, and/or the thickness of the first conductive pattern 311 is 10-100 nm. The thickness of the third conductive pattern 321 may be 1 to 10nm, and the thickness direction is parallel to the stacking direction of the third conductive pattern 321 and the second conductive pattern 104. The thickness of the second conductive pattern 104, the thickness of the third conductive pattern 321, and the thickness of the first conductive pattern 311 are within the above ranges, the effect of collecting carriers by the electrode is good. It should be noted that the directions in which the thicknesses are mentioned throughout are the same as the definitions.
Illustratively, the thickness of the second conductive pattern 104 may be 5um, 10um, 20um, 30um, 40um, or 50 um. For example, the thickness of the first conductive pattern 311 may be 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, or 100 nm. Illustratively, the thickness of the third conductive pattern 321 may be 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, or 10 nm.
Alternatively, as shown in fig. 1 to 6, the second conductive pattern 104 is composed of at least two second conductive sub-patterns stacked in a stacking direction parallel to the third conductive pattern 321 and the second conductive pattern 104. In fig. 2, what is shown by a broken line L1 may be a lamination direction parallel to the third conductive pattern 321 and the second conductive pattern 104. It should be noted that the second conductive pattern 104 is specifically composed of how many second conductive sub-patterns, and is not particularly limited. For example, as shown in fig. 1, 2, 3, 5, and 6, the second conductive pattern 104 is composed of a second conductive sub-pattern 1041 and a second conductive sub-pattern 1042 which are stacked in a stacking direction parallel to the third conductive pattern 321 and the second conductive pattern 104. For another example, as shown in fig. 4, the second conductive pattern 104 is composed of a second conductive sub-pattern 1041, a second conductive sub-pattern 1042 and a second conductive sub-pattern 1043 which are stacked in a stacking direction parallel to the third conductive pattern 321 and the second conductive pattern 104.
Alternatively, the material of the second conductive sub-pattern 1041 farthest from the third conductive pattern 321 in the second conductive pattern 104 may include tin. The second conductive sub-pattern 1041 of the second conductive pattern 104 farthest from the third conductive pattern 321 is also the portion of the electrode farthest from the solar cell body, and the material of the portion includes tin, on one hand, the oxidation of the rest of the second conductive sub-patterns in the second conductive pattern 104 can be prevented, on the other hand, the melting point of tin is low, during the soldering process of the solder strip and the electrode, because the melting point of tin is low, the soldering temperature can be low, which is beneficial to reducing the soldering temperature of the electrode during the formation of the cell assembly, and the like, so as to reduce the thermal influence on the solar cell or the cell assembly. The material of the second conductive pattern closest to the third conductive pattern 321 in the second conductive pattern 104 may be tin or a tin alloy. For example, in the solar cell shown in fig. 4, the material of the second conductive sub-pattern 1041 of the second conductive pattern 104 farthest from the third conductive pattern 321 includes tin, which mainly functions to prevent the second conductive sub-pattern 1042 and the second conductive sub-pattern 1043 from oxidizing, and during the soldering of the solder ribbon and the electrode, the soldering temperature can be lower due to the lower melting point of tin, which can reduce the thermal influence on the solar cell or the cell module.
Here, the tin alloy may be a copper-tin alloy, a lead-tin alloy, or the like.
The first embodiment also provides a method for manufacturing a solar cell, which can be used to manufacture the solar cell in the first embodiment, and fig. 7 is a flowchart illustrating steps of a method for manufacturing a solar cell according to an exemplary embodiment of the present invention. Referring to fig. 7, the method for manufacturing the solar cell includes the steps of:
step a1, a first conductive pattern or a first conductive film layer is formed on the solar cell body.
The first conductive pattern may be formed on the solar cell body in a manner of: and forming a first conductive pattern in an area to be provided with an electrode on the solar cell body by adopting the modes of screen printing, deposition, electroplating and the like. Or, by adopting the above manner, the entire first conductive film layer is formed on the solar cell body, and the first conductive pattern is formed by patterning the first conductive film layer. For example, the first conductive film layer 311 may be formed by vacuum deposition, such as vacuum sputtering deposition. If the entire first conductive film layer 311 is formed, a mask layer may be disposed on the first conductive film layer 311, the mask layer may be patterned, and the first conductive pattern 311 may be formed by wet etching. Alternatively, the first conductive film layer 311 may be patterned by using a laser to form the first conductive pattern 311. In the present embodiment, this is not particularly limited.
Fig. 8 is a schematic partial structure diagram of a first HJT solar cell according to an exemplary embodiment of the present invention. Fig. 9 is a schematic partial structure diagram of a second HJT solar cell according to an exemplary embodiment of the present invention. Referring to fig. 8 and 9, a first conductive film layer 311 is formed on the solar cell body by screen printing, deposition, electroplating, or the like.
Optionally, the forming of the first conductive pattern or the first conductive film layer on the solar cell body may include: and laying a metal foil on the solar cell body to form a first conductive film layer. The metal foil is then patterned to form a first conductive pattern. The pattern formation method is not particularly limited. The material of the metal foil is the same as that of the first conductive pattern or the first conductive film layer.
Alternatively, after the metal foil is laid on the solar cell body, the method may include: and pressing the metal foil to ensure that the metal foil is attached to the solar cell body. Specifically, if the solar cell body has the pyramid shape, the gap between the two may be relatively obvious, and the metal foil is better attached to the solar cell body through pressing, which is beneficial to aligning electroplating or chemical plating and improving the reliability of the electrode. The pressing method is not limited specifically, for example, the metal foil can be pressed by a roller, and after the pressing, the surface of the metal foil can be cleaned to reduce the pollution of the pressing substance to the surface of the metal foil. In the embodiment of the present invention, this is not particularly limited.
Step a2 forms a second conductive pattern on the imprint template.
Fig. 10 is a schematic partial structure diagram of a first method for forming a second conductive pattern according to an exemplary embodiment of the present invention, and fig. 11 is a schematic partial structure diagram of a second method for forming a second conductive pattern according to an exemplary embodiment of the present invention. Fig. 12 is a schematic partial structure diagram of a third method for forming a second conductive pattern according to an embodiment of the present invention. Fig. 13 is a schematic partial structure diagram of a fourth method for forming a second conductive pattern according to an embodiment of the present invention. Fig. 14 is a schematic partial structure diagram of a fifth method for forming a second conductive pattern according to an exemplary embodiment of the present invention. Referring to fig. 10-14, a second conductive pattern 104 is formed on the imprint template. For example, a whole second conductive film layer is formed on the imprint template, and then the second conductive pattern 104 is formed by laser etching. The imprint template mainly functions as follows: the imprint template may serve as a part for carrying the second conductive pattern 104 during the transfer of the second conductive pattern 104 to the first conductive pattern or the first conductive film layer 311 on the solar cell body. Each of the second conductive patterns 104 shown in fig. 11 and 13 is composed of a second conductive sub-pattern 1041 and a second conductive sub-pattern 1042 which are arranged in a stacked manner in a stacking direction parallel to the first conductive pattern 311 and the second conductive pattern 104. The second conductive pattern 104 shown in fig. 14 is composed of a second conductive sub-pattern 1041, a second conductive sub-pattern 1042, and a second conductive sub-pattern 1043 which are arranged in a stack in a stacking direction parallel to the third conductive pattern 321 and the second conductive pattern 104.
In some examples, forming the second conductive pattern 104 on the imprint template includes: in fig. 10, a second conductive sub-pattern 1041 is formed on the imprint template first, and in fig. 11, a second conductive sub-pattern 1042 is formed on the second conductive sub-pattern 1041.
In other examples, forming the second conductive pattern 104 on the imprint template includes: in fig. 12, a second conductive sub-pattern 1041 is formed on the imprint template first, and in fig. 13, a second conductive sub-pattern 1042 is formed on the second conductive sub-pattern 1041. In fig. 14, a second conductive sub-pattern 1042 is formed on the second conductive sub-pattern 1041, and then a second conductive sub-pattern 1043 is formed on the second conductive sub-pattern 1042.
The manner of forming the second conductive pattern 104 on the imprint template may include: electroplating, deposition, etc. The second conductive pattern 104 is formed on the imprint template, rather than being fabricated on the solar cell body, and the fabrication process of the second conductive pattern 104 has little or no influence on the solar cell body, so that the influence on the solar cell body can be reduced, and mass production can be easily achieved.
A step a3 of aligning the second conductive pattern with the first conductive pattern, forming a third conductive pattern between the second conductive pattern and the first conductive pattern by electroplating or electroless plating, and connecting the second conductive pattern with the first conductive pattern through the third conductive pattern; or aligning the second conductive pattern with the region of the first conductive film layer where the electrode is to be formed, forming a third conductive pattern between the second conductive pattern and the region of the first conductive film layer where the electrode is to be formed by electroplating or chemical plating, and connecting the second conductive pattern with the region of the first conductive film layer where the electrode is to be formed by the third conductive pattern.
The second conductive pattern 104 is aligned with the first conductive pattern 311, where the alignment may be: the first projection of the second conductive pattern 104 on the solar cell body and the second projection of the first conductive pattern 311 on the solar cell body have an overlapping region, and the area size of the overlapping region is not particularly limited. For example, the size of the area of the first projection may be equal to the size of the area of the second projection, and the area of the overlapping region is smaller than the area of the first projection, or the size of the area of the first projection may be equal to the size of the area of the second projection, and the size of the area of the overlapping region is equal to the size of the area of the first projection, or the area of the second projection may be larger than the area of the first projection, and the first projection completely falls into the second projection. It should be noted that all references to alignment throughout are to be understood as referring to the same or similar definitions of alignment herein.
After the first conductive pattern 311 and the second conductive pattern 104 are aligned, the third conductive pattern 321 formed by electroplating or chemical plating is connected between the second conductive pattern 104 and the first conductive pattern 311, and after the imprint template is removed, the second conductive pattern 104 on the imprint template is transferred to the first conductive film layer 311 or the first conductive pattern 311 on the solar cell body. The electroplating or chemical plating has the characteristics of low bonding temperature and high bonding strength, and the low bonding temperature can ensure that the solar cell body is less influenced by heat and has little influence on the photoelectric conversion efficiency of the solar cell. The high bonding strength can make the reliability of the electrodes of the solar cell good. Compared with screen printing, the second conductive pattern, the third conductive pattern, the first conductive film layer or the first conductive pattern of the invention can be conductive, and is not limited to silver paste, so that the cost can be properly reduced. Compared with laser transfer printing, the second conductive pattern and the first conductive pattern are connected together through the third conductive pattern formed by electroplating or chemical plating, or the second conductive pattern and the third conductive pattern formed by electroplating or chemical plating in the area of the first conductive film layer where the electrode is to be formed are connected together, the electroplating or chemical plating process is mature, the process difficulty is relatively low, and the production efficiency can be properly improved.
The electroplating is to plate a layer of material of the third conductive pattern on the surface of the second conductive pattern close to the first conductive pattern by using the electrolysis principle, and plate a layer of material of the third conductive pattern on the surface of the first conductive pattern close to the second conductive pattern by using the electrolysis principle. Electroless plating is to reduce metal ions in an electroless plating solution to metal by means of a suitable reducing agent without an applied current, deposit on the surface of the second conductive pattern near the first conductive pattern, and deposit on the surface of the first conductive pattern near the second conductive pattern. The process parameters such as the temperature of the electroplating or electroless plating are not particularly limited and are preferably suitable for forming the third conductive pattern. The electroless plating is not particularly limited, and may be, for example, lithium plating.
Fig. 15 is a schematic structural diagram illustrating alignment of a second conductive pattern with a region of a first conductive film layer where an electrode is to be formed according to an embodiment of the present invention. Fig. 16 is an enlarged partial structural view schematically illustrating alignment of the second conductive pattern with an area of the first conductive film layer where the electrode is to be formed according to an embodiment of the present invention. Referring to fig. 15 and 16, the second conductive pattern 104 is aligned with the region of the first conductive film layer 311 where the electrode is to be formed, similar to the alignment of the second conductive pattern 104 with the first conductive pattern 311, and the same or similar beneficial effects can be achieved by referring to the related descriptions, and therefore, the description thereof is omitted herein for the sake of avoiding repetition.
Fig. 17 is a schematic structural diagram of a third conductive film layer plated or electrolessly plated between the second conductive pattern and a region of the first conductive film layer where an electrode is to be formed according to an exemplary embodiment of the present invention. Fig. 18 is a schematic partial enlarged structural view illustrating a third conductive film layer is electroplated or electrolessly plated between the second conductive pattern and a region of the first conductive film layer where an electrode is to be formed according to an exemplary embodiment of the present invention. Referring to fig. 17 and 18, the second conductive pattern 104 is connected to the third conductive pattern formed by electroplating or chemical plating on the region of the first conductive film layer 311 where the electrode is to be formed, or the second conductive pattern 104 is connected to the third conductive pattern 321 formed by electroplating or chemical plating on the first conductive pattern 311, and the same or similar beneficial effects can be achieved. In step a3, the forming a third conductive pattern by electroplating or electroless plating between the second conductive pattern and the region of the first conductive film layer where the electrode is to be formed may include: and forming a third conductive film layer between the second conductive pattern and the region of the first conductive film layer where the electrode is to be formed in an electroplating or chemical plating manner, and patterning the third conductive film layer to obtain a third conductive pattern. In some examples, the third conductive film layer may be patterned after the imprint template is removed. The patterning manner is not particularly limited, and for example, patterning may be achieved by laser.
It should be noted that, if the first conductive pattern 311 or the region of the first conductive film layer where the electrode is to be formed has a pyramid textured structure, the third conductive pattern or the third conductive film layer 321 may fill and level the textured structure in the process of electroplating or chemically plating the third conductive pattern.
Step a4, removing the imprint template.
FIG. 19 is a schematic diagram of an imprint template removal structure according to an embodiment of the present invention. The transfer of the second conductive pattern 104 on the imprint template onto the first conductive film layer 311 or the first conductive pattern 311 on the solar cell body substantially forms an electrode of the solar cell, and then the imprint template is removed. Here, the imprint template may be removed by a mechanical external force or the like, and in the embodiment of the present invention, the manner of removing the imprint template is not particularly limited. The removal of the imprint template is mainly based on the bonding force between the second conductive pattern 104 and the imprint template, which is smaller than the electroplating or electroless plating bonding force between the second conductive pattern 104 and the third conductive pattern 321, thereby removing the imprint template. Alternatively, a coating or the like may be applied between the imprint template and the second conductive pattern 104 with the effect that the second conductive pattern 104 is easier to detach from the imprint template, further facilitating the removal of the imprint template. For example, there may be tin or a tin alloy between the imprint template and the second conductive pattern 104, which has a lower melting point and thus facilitates removal of the imprint template.
It should be noted that after the imprint template is removed, an acid solution or an alkali solution may be used to clean the second conductive pattern remaining on the imprint template, so that the imprint template may be reused, thereby further reducing the cost. Specifically, whether the imprint template is cleaned by using the acid solution or the imprint template is cleaned by using the alkali solution is determined according to the material of the second conductive pattern, and this is not particularly limited in this embodiment.
Fig. 20 is a partially enlarged schematic view of an imprint template removal apparatus according to an embodiment of the present invention. Note that as shown in fig. 17 to 19, if the entire third conductive film layer 321 is formed by electroplating or electroless plating, as shown in fig. 20, a removing solution corresponding to the material in the third conductive film layer 321 may be used to remove the portion of the third conductive film layer 321 outside the electrode region to form a third conductive pattern, so as to avoid the problems of short circuit and the like. If the first conductive pattern 311 or the region of the first conductive film layer where the electrode is to be formed has a pyramid textured structure, the textured structure outside the region of the first conductive film layer where the electrode is to be formed may be exposed again while removing the portion outside the electrode region in the third conductive film layer 321.
Step a5, in the case of forming a first conductive film layer on the solar cell body, removing a portion of the first conductive film layer except for an electrode region to be formed, to form a first conductive pattern.
The first conductive film layer 311 is disposed on the solar cell body in a whole layer, and a removing liquid corresponding to a material in the first conductive film layer 311 may be used to remove a portion of the first conductive film layer 311 other than the electrode region to form a first conductive pattern, thereby avoiding problems such as short circuit.
It should be noted that the first conductive pattern with a suitable shape can be obtained by controlling the concentration of the removing liquid and/or the removing time, and further controlling the precision of forming the first conductive pattern, which is not specifically limited in this embodiment.
Referring to fig. 2 to 6, the first conductive film layer may be removed to form a first conductive pattern 311.
Optionally, before the step a3, the method may further include: the imprint template on which the second conductive pattern 104 is formed is annealed, so that the second conductive pattern 104 is recrystallized to eliminate stress, the second conductive pattern 104 is annealed on the imprint template, but the second conductive pattern 104 is not annealed after being transferred to the solar cell body, and thus, the annealing does not have a thermal influence on the solar cell body and does not have a bad influence on the photoelectric conversion efficiency of the solar cell.
Optionally, the annealing temperature is: 200 ℃ and 700 ℃, the annealing time is as follows: annealing in this temperature range for 0.5-2 minutes results in a more complete and energy efficient stress relief of the second conductive pattern 104 on the imprint template. For example, the annealing temperature is 200 ℃ and the annealing time is 30 seconds. As another example, the annealing temperature is 700 ℃ and the annealing time is 2 minutes. As another example, the annealing temperature is 400 ℃ and the annealing time is 60 seconds. As another example, the annealing temperature is 700 ℃ and the annealing time is 45 seconds.
Optionally, the annealing temperature is: 500-700 ℃, the annealing time is as follows: the stress relief of the second conductive pattern 104 on the imprint template, and the energy saving are well balanced for 1 minute at the annealing temperature and the annealing time.
The annealing method may be infrared heating, ultrasonic heating, resistance heating, or the like, and is not particularly limited in the embodiment of the present invention.
Optionally, before forming the first conductive pattern or the first conductive film layer on the solar cell body, the method may further include: forming an adhesive pattern 322 or an adhesive film 322 on the solar cell body, where the adhesive pattern 322 or the adhesive film 322 is used to improve a bonding force between the first conductive pattern and the solar cell body, and forming the first conductive pattern may include: a first conductive pattern is formed on the adhesive pattern 322 or the adhesive film layer 322. Here, the adhesive film layer 322 is formed as a whole layer on the solar cell body, and the adhesive pattern 322 is obtained by patterning the whole adhesive film layer 322. The manner of forming the bonding pattern 322 may also be: firstly, a whole adhesive film layer 322 is formed on the solar cell body by screen printing, electroplating, deposition, and the like, then a mask is formed on the adhesive film layer 322, the mask is patterned, and then wet etching is performed to obtain the adhesive pattern 322, or the adhesive film layer 322 is patterned by using laser to obtain the adhesive pattern 322, which is not particularly limited in this embodiment. The materials of the bonding pattern 322 and the like can be referred to the related description above, and can achieve the same or similar advantageous effects, and are not described herein again in order to avoid redundancy.
The first conductive film layer 311 is formed on the adhesive film layer 322. After electroplating or electroless plating, the method may further comprise: the portion of the adhesive film layer 322 other than the electrode region is removed to form the adhesive pattern 322 to avoid short-circuiting or the like as much as possible. The removal liquid corresponding to the material in the adhesive film 322 can be selected to remove the portion of the adhesive film 322 outside the electrode area, and the concentration of the removal liquid and/or the removal time can be controlled to obtain the accurately shaped adhesive pattern 322.
Fig. 21 is a schematic structural diagram of a first imprint template exemplarily provided by the embodiment of the present invention. Alternatively, as shown in fig. 21, the imprint template includes a first groove 103, and as shown in fig. 11 and 12, the step a2 may include: a second conductive pattern 104 is formed in the first recess 103 of the imprint template. The second conductive pattern 104 is flush with the surface of the imprint template on the side where the first recess 103 is provided, or, the surface of the imprinting stamp protruding from the side where the first groove 103 is disposed, so that in the process of forming the third conductive pattern 321 between the second conductive pattern 104 and the first conductive pattern 311 or the region of the first conductive film layer 311 where the electrode is to be formed by electroplating or electroless plating, only the second conductive pattern 104 is close to the first conductive pattern 311 or the region of the first conductive film layer 311 where the electrode is to be formed, the third conductive pattern can be formed only between the second conductive pattern 104 and the region of the first conductive pattern 311 or the first conductive film layer 311 where the electrode is to be formed by electroplating or electroless plating, the third conductive pattern is not electroplated or electroless plated on the rest of the imprinting template basically, so that the imprinting template can be prevented from being polluted, and the material used for electroplating and electroless plating is reduced. The first groove 103 serves as a gate line pattern corresponding to the second conductive pattern 104, so that the second conductive pattern 104 with a precise shape can be formed. The formation of the second conductive pattern in the first groove 103 of the imprint template may be achieved by electroplating, deposition, etc., which is not particularly limited in this embodiment. It should be noted that, if the deposition method is selected, after the deposition is completed, the second conductive film layer located in the region outside the first groove 103 needs to be etched.
For example, a first recess 103 may be provided inwardly in a localized region of the surface of the substrate 101 to form an imprint template. Referring to fig. 17, the surface of the substrate may be a surface of the substrate 101 near the solar cell body in the process of transferring the second conductive pattern 104 to the first conductive film layer 311 on the solar cell body on which the electrode region is to be disposed. If the second conductive pattern 104 is formed in the first groove 103 by electroplating, the surface of the first groove 103 needs to be a conductive surface, and the rest of the surface of the substrate 101 is a non-conductive surface. A non-conductive hard substrate may be selected, a conductive material may be deposited on the hard substrate, a portion of the conductive material remote from the hard substrate may be oxidized to a non-conductive material to form the substrate 101, a first recess 103 may then be opened inward from the non-conductive material such that the conductive material under the non-conductive material at the bottom of the first recess 103 is exposed, the exposed conductive material may serve as a cathode for electroplating, and the remaining surfaces of the substrate 101 may be non-conductive surfaces that will not be electroplated during electroplating to form the imprint template. The size of the first groove 103 is not particularly limited, and for example, the notch of the first groove 103 may be elongated, and the width of the notch of the first groove 103 may be 10 um.
The hard matrix herein only needs to have a certain supporting hardness, and the thickness and material of the hard matrix are not particularly limited. The material of the conductive substance and the non-conductive substance is not particularly limited. For example, the hard matrix may be a ceramic with a thickness of 5 nm. An aluminum layer can be deposited on the 5nm ceramic, e.g., by sputtering, evaporation, etc., to form a 20um aluminum layer. The aluminum layer is then oxidized such that a portion of the thickness of the aluminum layer remote from the ceramic is oxidized to aluminum oxide, while the remaining aluminum layer adjacent to the ceramic is not oxidized. The thickness of the oxidized aluminum layer and the non-oxidized aluminum layer is not particularly limited herein, and for example, the thickness of the oxidized aluminum may be 10um and the thickness of the non-oxidized aluminum layer may be 10 um. Laser etching can then be used to open the grooves so that portions of the alumina are removed until the aluminum layer is exposed. During the electroplating process, the aluminum oxide is not electroplated, and only the aluminum layer on the bottom of the first groove 103 is electroplated.
Alternatively, as shown in figure 21, the imprint template further comprises a substrate 101, the first recess 103 being provided in the substrate 101. The imprint template further comprises a first boss 102 arranged on the substrate 101 at an edge of the first recess 103. Referring to fig. 10 and 11, a second conductive pattern 104 is formed in the first groove 103 of the imprint template, and includes: in the first recesses 103 of the imprint template and in the areas defined by the first lands 102, second conductive patterns 104 are formed. The second conductive pattern 104 is flush with the surface of the first boss 102 away from the substrate 101, or protrudes from the surface of the first boss 102 away from the substrate 101. Referring to fig. 15, since the first bosses 102 protrude from the substrate 101, the regions where the electrodes are to be disposed in the first conductive film layer 311 are aligned with the second conductive patterns 104, and in the process of forming the third conductive pattern by electroplating or electroless plating, only the portion of the second conductive pattern 104 protruding from the surface of the first boss 102 away from the substrate 101, alternatively, only the portions of the second conductive pattern 104 that are flush with the surface of the first boss 102 remote from the substrate 101, the distance between the first conductive film layer 311 and the area to be provided with the electrode is shorter, the third conductive pattern can be formed only between the second conductive pattern 104 and the area to be provided with the electrode in the first conductive film layer 311 through electroplating or chemical plating, the third conductive pattern is not electroplated or chemically plated on the rest part of the embossing template basically, the embossing template can be prevented from being polluted, and materials used for electroplating and chemical plating are reduced.
Note that the second conductive pattern is not formed on the surface of the first land 102 away from the substrate 101, which is advantageous in that waste can be reduced and current loss can be reduced. More specifically, if the second conductive pattern is formed on the surface of the first boss 102 away from the substrate 101, and the projection of the portion of the second conductive pattern on the surface of the substrate 101 close to the first boss 102 does not coincide with the projection of the second conductive pattern in the first groove 103 and in the region defined by the first boss 102 on the surface of the substrate 101 close to the first boss 102, the portion of the collected carriers need to be transmitted in the direction parallel to the width of the notch of the first groove 103 to be able to derive the carriers, the carrier transmission path is long, which may cause a certain current loss, and therefore, in some examples, the second conductive pattern is not formed on the surface of the first boss 102 away from the substrate 101, which may reduce the current loss and reduce the waste of the second conductive pattern material. The implementation manner of not forming the second conductive pattern on the surface of the first boss 102 away from the substrate 101 may be: in the process of depositing and forming the second conductive pattern, the second conductive pattern formed on the surface of the first boss 102 far away from the substrate 101 is also deposited, then a mask is arranged, the mask is patterned, and wet etching is performed to remove the second conductive pattern formed on the surface of the first boss 102 far away from the substrate 101. Or in the process of depositing to form the second conductive pattern, depositing on the surface of the first boss 102 away from the substrate 101, and removing the second conductive pattern formed on the surface of the first boss 102 away from the substrate 101 by adopting a laser etching mode. Still alternatively, the areas defined by the first bosses 102 on both sides are provided as conductive surfaces, and the surfaces of the first bosses 102 away from the substrate 101 are provided as non-conductive surfaces. The specific method comprises the following steps: a conductive material may be selected for a portion of the first pad 102 close to the substrate 101, and then a non-conductive material is deposited or coated on a portion of the first pad 102 close to the substrate 101, and then the non-conductive material in an area defined by the first pads 102 on both sides is etched, so that a conductive surface is formed in the area defined by the first pads 102 on both sides, and a surface of the first pad 102 away from the substrate 101 is a non-conductive surface, during the electroplating process, a second conductive pattern can be electroplated by using the conductive surface as a cathode in the area defined by the first pads 102 on both sides, and the second conductive pattern cannot be electroplated on a surface of the first pad 102 away from the substrate 101.
It should be noted that the first boss 102 may be integrally formed with the substrate 101, or the first boss 102 and the substrate 101 may be separately manufactured, and then the first boss 102 and the substrate 101 are fixedly connected together by using a glue layer, etc., which is not particularly limited in this embodiment.
Alternatively, referring to fig. 21, the area of the cross section of the first groove 103 gradually decreases along the direction from the notch of the first groove 103 to the groove bottom, wherein the cross section of the first groove 103 is perpendicular to the stacking direction of the third conductive pattern 321 and the second conductive pattern 104, and further along the direction from the notch of the first groove 103 to the groove bottom, the area of the cross section of the second conductive pattern 104 is also gradually decreased, which is beneficial to reducing the light shielding and reducing the reflection.
Fig. 22 is a schematic diagram of a second imprint template exemplarily provided by an embodiment of the present invention. Figure 23 is a schematic diagram of a third imprint template illustratively provided by an embodiment of the present invention. Alternatively, as shown with reference to figures 22 and 23, the imprint template comprises the substrate 101 and a second stage 202 on the substrate 101. The number of the second lands 202 on the substrate 101 is not particularly limited. For example, in the imprint template shown in FIG. 22, there are two second lands 202 on the substrate 101, and in the imprint template shown in FIG. 23, there are three second lands 202 on the substrate 101. It should be noted that the substrate 101 and the second boss 202 may be formed in one step or separately, and this is not particularly limited in this embodiment. Referring to fig. 12 and 13, the step a2 may include: a second conductive film layer 104 is formed on the side of the imprint template where the second mesas 202 are formed, and the portion of the second conductive film layer 104 on the second mesas 202 is a second conductive pattern. For the second conductive film layer 104 formed by deposition, electroplating, or the like, the height difference between the second boss 202 and the substrate 101 may be utilized to disconnect the portion of the second conductive film layer 104 on the second boss 202 from the portion on the substrate 101, on one hand, after the second conductive pattern 104 is aligned with the region of the first conductive pattern 311 or the first conductive film layer 311 on which the electrode is to be disposed, it may be ensured that only the portion on the second boss 202 is closer to the region of the first conductive pattern 311 or the first conductive film layer 311 on which the electrode is to be disposed, the third conductive pattern may be formed only between the second conductive pattern 104 and the region of the first conductive pattern 311 or the first conductive film layer 311 on which the electrode is to be disposed by electroplating or electroless plating, the rest of the imprint template may not be electroplated or electroless plated with the third conductive pattern, and the imprint template may be prevented from being contaminated, and the materials used for electroplating and chemical plating are reduced, on the other hand, the rest part of the imprinting template and the first conductive film layer 311 or the solar cell body do not form a third conductive pattern by electroplating or chemical plating, which is beneficial to removing the imprinting template.
Here, the second conductive film layer 104 may be a metal foil, and the step a3 may be: a metal foil is laid on the side of the imprint template on which the second lands 202 are formed, and the portion of the metal foil that is located on the second lands 202 is the second conductive pattern 104. The portion outside the second bump 202 may be adsorbed on the substrate 101 by lamination or the like, thereby preventing displacement of the metal foil or the like. For example, the metal foil can be pressed by a roller, and after the pressing, the surface of the metal foil can be cleaned, so that the pollution of pressing substances to the surface of the metal foil is reduced, and the like. In the embodiment of the present invention, this is not particularly limited. Similarly, by attaching the portion of the metal foil outside the second pad 202 to the substrate 101, after aligning the second conductive pattern 104 with the first conductive pattern 311 or the region of the first conductive film 311 where the electrode is to be disposed, it can be ensured that only the portion on the second pad 202 is closer to the first conductive pattern 311, the third conductive pattern can be formed only between the second conductive pattern 104 and the region of the first conductive film 311 where the electrode is to be disposed by electroplating or electroless plating, the rest of the imprint template is not substantially electroplated or electroless plated with the third conductive pattern, thereby avoiding contamination of the imprint template and reducing the material used for electroplating electroless plating. At this time, the portion of the metal foil located on the second boss 202 and the portion located outside the second boss 202 may not be disconnected before the electroplating or the electroless plating and may be disconnected after the electroplating or the electroless plating. The material of the metal foil may be the same as that of the second conductive pattern 104, and therefore, the description thereof is omitted to avoid repetition. For example, the metal foil may be a copper foil or the like.
The surface of the second boss 202 away from the substrate 101 may have small burrs or the like, and the small burrs or the like may hang the metal foil, so that the second conductive pattern and the first conductive pattern or the region of the first conductive film layer where the electrode is to be disposed are aligned, and in the process of electroplating or chemically plating the third conductive pattern, the second conductive pattern is not prone to position shift or the like. The material of the metal foil here is the same as or similar to that of the aforementioned second conductive pattern. For example, the metal foil may be a copper foil.
Alternatively, referring to fig. 22 or 23, the surface of the second boss 202 away from the substrate 101 is planar, and the surface of the second conductive pattern 104 thus formed adjacent to the second boss 202 is also planar.
Alternatively, optionally, the side of the second mesa 202 facing away from the substrate 101 comprises a second recess (not shown in the figures) for forming a second conductive pattern on the imprint template, comprising: a second conductive pattern is formed in the second recess where the surface of the second recess on the first land 202 serves as a grid line pattern. For example, the area of the cross section of the second groove gradually decreases in the direction approaching the substrate 101, and further, the cross section of the portion of the second conductive pattern 104 away from the solar cell body in the finally formed solar cell gradually decreases in the direction away from the solar cell body, and reflection and shading can be reduced. Here, the second conductive pattern is flush with the notch of the second groove, or protrudes from the second groove.
Alternatively, the imprint template may comprise a substrate, and step a2 may comprise: and laying a metal foil on the substrate, and patterning the metal foil to form a second conductive pattern. That is, a metal foil is laid on the substrate in a whole layer, and then patterned by laser etching or the like to form the second conductive pattern. The material of the metal foil and the like may also be the same as the material of the second conductive pattern 104 or the second conductive film layer 104, and will not be described herein again to avoid repetition.
Optionally, before the step a2, the method may further include: several metal foil patterns are provided. The imprint template may comprise several adsorption regions, and the step a2 may comprise: and at least aligning one adsorption area and one metal foil pattern, and adsorbing the metal foil pattern on the adsorption area to form a second conductive pattern on the imprinting template. For example, an imprint template may include a substrate and a number of adsorption regions spaced apart on the substrate. At least one adsorption area and one metal foil pattern are aligned, and the metal foil pattern is adsorbed on the adsorption area to form a second conductive pattern on the substrate. The suction area may here be located in a local area on one surface of the substrate. Alternatively, for example, the substrate has lands and the lands have suction areas, at least one of the suction areas on the lands and one of the metal foil patterns are aligned, and the metal foil pattern is sucked onto the suction areas to form the second conductive patterns on the lands of the substrate. For the alignment, reference may be made to the foregoing alignment definition, and details will not be repeated here to avoid redundancy.
For example, the substrate may have a hollow structure, and a vacuum adsorption member, a magnet, or the like may be partially disposed in the hollow structure of the substrate, so that the metal foil pattern is adsorbed by the vacuum adsorption member, the magnet, or the like. In the examples of the present invention, the specific adsorption method and the like are not particularly limited.
Fig. 24 is a schematic structural diagram of a fourth HJT solar cell according to an exemplary embodiment of the present invention. Alternatively, referring to fig. 24, the second conductive pattern 104 may also be a metal wire 1044, and the shape, size, and the like of the metal wire 1044 are not particularly limited. For example, the wire 1044 can have a diameter of 10 to 50 microns and a length of 10 to 1000 microns. The material of the metal wire 1044 may be the same as the material of the second conductive pattern, which is not described herein again. For example, the metal wires 1044 may be made of copper, aluminum, or the like.
Optionally, referring to fig. 24, the surface of the metal wire 1044 may be further coated with a coating 1045, and the material of the coating 1045 may include: nickel, tin, and the like, and the coating 1045 of the above material has excellent conductivity, and can appropriately reduce the contact resistance and the like of the metal wire 1044 and the third conductive pattern 321. The thickness of the coating 1045 is not particularly limited, and for example, the thickness of the coating 1045 may be 1 to 10 micrometers.
The metal wire may be disposed in the first groove 103 or the second groove of the imprint template, and may be caught, and after the metal wire is caught, the metal wire may be flush with the notches of the first groove 103 and the second groove, or the metal wire may protrude from the notches of the first groove 103 and the second groove, so as to form the second conductive pattern on the imprint template.
Example two
The second embodiment provides another solar cell, which includes a solar cell body, and a positive electrode and a negative electrode disposed on the solar cell body; the structure of the positive electrode and the structure of the negative electrode can be the same or different. The electrode (which may be a positive electrode or a negative electrode) of the solar cell includes: a third conductive pattern and a second conductive pattern which are stacked on the solar cell body; wherein the second conductive pattern is connected to the solar cell body through the third conductive pattern; the grain size of the third conductive pattern increases from a portion near the solar cell body to the middle region, and increases from a portion near the second conductive pattern to the middle region.
The solar cell body refers to the related descriptions in the first embodiment, and is not repeated herein to avoid repetition. For example, the solar cell body herein may be a portion capable of conducting electricity, such as a TCO and a silicon substrate, and if a passivation layer and the like are further disposed on the solar cell body, the passivation layer may be grooved, so that the portion capable of conducting electricity is exposed. For example, the grain size distribution of the third conductive pattern may refer to the related description in the first embodiment, and will not be described herein again to avoid repetition.
Referring to fig. 5 and 24, the third conductive pattern 321 formed by electroplating or electroless plating on the second conductive pattern 104 is connected to the solar cell body, and the electroplating or electroless plating process is simple and mature and is easy to realize mass production. Meanwhile, the electroplating or chemical plating has the characteristics of low bonding temperature and high bonding strength, and the low bonding temperature can ensure that the solar cell body is less influenced by heat and has little influence on the photoelectric conversion efficiency of the solar cell. The high bonding strength can make the reliability of the electrodes of the solar cell good. The material of the second conductive pattern and the third conductive pattern can conduct electricity, and are not limited to silver paste, the material selectivity is high, compared with the silver paste, the cost can be properly reduced by selecting copper, tin and the like, the silver paste is granular, so that the contact between silver particles is less, the silver paste contains organic components, the organic components can influence the contact between the silver particles, the resistivity of the silver paste electrode is higher, and the conductivity is poor. In addition, since the second conductive pattern 104 is not formed on the solar cell body, the formation process of the second conductive pattern has little or no influence on the solar cell body, and mass production is easily achieved, which can reduce the production cost.
The material of the second conductive pattern and the material of the third conductive pattern may be conductive, and the material of the second conductive pattern and the material of the third conductive pattern are not particularly limited. For example, the material of the second and third conductive patterns may include metal such as nickel and aluminum. For example, the material of the second conductive pattern may be elemental nickel or a nickel alloy, or the material of the second conductive pattern may be aluminum. The electroplating or chemical plating process is simple and mature, mass production is easy to realize, and meanwhile, the solar cell body is less affected by heat due to combination of temperature. And the bonding strength of electroplating or chemical plating is high, so that the reliability of the electrode of the solar cell is good.
Meanwhile, compared with screen printing, the second conductive patterns and the third conductive patterns can conduct electricity, and are not limited to silver paste, so that cost can be properly reduced. In addition, compared with laser transfer printing, the second conductive pattern and the third conductive pattern formed by the solar cell body through electroplating or chemical plating are connected together, the electroplating or chemical plating process is mature, the process difficulty is relatively low, and the production efficiency can be properly improved.
Optionally, the shape, thickness, material, structural composition, and the like of the second conductive pattern in the second embodiment, and the shape, thickness, material, structure, and the like of the third conductive pattern may correspond to the related descriptions in the first embodiment, and the same or similar beneficial effects can be achieved, and therefore, the details are not repeated herein to avoid repetition.
The second embodiment further provides a method for manufacturing a solar cell, which can be used for manufacturing the solar cell in the second embodiment, and fig. 25 is a flowchart illustrating steps of another method for manufacturing a solar cell according to an embodiment of the present invention. Referring to fig. 25, the method for manufacturing the solar cell includes the steps of:
in step S1, a second conductive pattern is formed on the imprint template.
Step S1 can refer to the related descriptions in the first embodiment, and can achieve the same or similar advantages, and therefore, the description thereof is omitted here for the sake of avoiding repetition.
Step S2, aligning the second conductive pattern with the region of the solar cell body where the electrode is to be formed, forming a third conductive pattern between the second conductive pattern and the region of the solar cell body where the electrode is to be formed by electroplating or chemical plating, and connecting the second conductive pattern with the region of the solar cell body where the electrode is to be formed by the third conductive pattern.
For the alignment in step S2, reference may be made to the related description in the first embodiment, and details are not repeated here to avoid repetition. Step S2 effects transfer of the second conductive pattern onto the solar cell body.
And a step S3 of removing the imprint template.
Step S3 can refer to the related descriptions in the first embodiment, and can achieve the same or similar advantages, and therefore, the description thereof is omitted here for the sake of avoiding repetition.
Optionally, before electroplating or electroless plating, the method may further comprise: and annealing the imprinting template with the second conductive pattern, so that the second conductive pattern is recrystallized to eliminate stress. The annealing temperature, annealing time, annealing manner, etc. can all be referred to the related descriptions in the first embodiment, and can achieve the same or similar beneficial effects, and are not repeated herein for avoiding repetition.
Alternatively, as shown in fig. 21, the imprint template includes the first groove 103, and as shown in fig. 10 and 11, the step S1 may include: a second conductive pattern 104 is formed in the first recess 103 of the imprint template. The second conductive pattern 104 is flush with the surface of the imprinting template on the side provided with the first groove 103, or protrudes from the surface of the imprinting template on the side provided with the first groove 103. The second conductive patterns formed in the first grooves 103 of the imprinting stamp can be obtained by referring to the related descriptions in the first embodiment, and the same or similar advantages can be achieved, so that the details are not repeated herein to avoid repetition.
Alternatively, referring to fig. 21, the imprint template further includes a substrate 101, the first recess 103 being disposed on the substrate 101, and the imprint template further includes a first mesa 102 disposed on the substrate 101 and located at an edge of the first recess 103. The step S1 may include: a second conductive pattern 104 is formed in the first groove 103 and in the region defined by the first land 102. The second conductive pattern 104 is flush with the surface of the first boss 102 away from the substrate 101, or protrudes from the surface of the first boss 102 away from the substrate 101. Reference may also be made to the related descriptions in the first embodiment for achieving the same or similar advantages, and further description is omitted here for avoiding redundancy.
Optionally, referring to fig. 21, in a direction from the notch of the first groove 103 to the groove bottom, an area of a cross section of the first groove 103 is gradually reduced, wherein the cross section of the first groove 103 is perpendicular to a stacking direction of the second conductive pattern and the third conductive pattern, and further, in the direction from the notch of the first groove 103 to the groove bottom, an area of a cross section of the formed second conductive pattern is also gradually reduced, which is beneficial to reducing shading and reducing reflection. Reference may also be made to the related descriptions in the first embodiment for achieving the same or similar advantages, and further description is omitted here for avoiding redundancy.
Alternatively, as shown with reference to figures 22 and 23, the imprint template comprises the substrate 101 and the second lands 202 on the substrate 101. The number of the second lands 202 on the substrate 101 is not particularly limited. Referring to fig. 12 and 13, the step S1 may include: a second conductive pattern is formed on the side of the imprint template on which the second lands 202 are formed. The manner of forming the second conductive pattern, the number of the second bosses, and the like, all of which refer to the related descriptions in the first embodiment, and can achieve the same or similar beneficial effects, and are not repeated herein for the sake of avoiding repetition.
Optionally, a surface of the second bump 202 away from the substrate 101 is a plane, or, optionally, a side of the second bump 202 away from the substrate 101 includes a second groove (not shown in the figure), wherein the second conductive pattern 104 is flush with a notch of the second groove, or protrudes out of the second groove. Here, reference may be made to the relevant descriptions in the first embodiment, and the same or similar beneficial effects may be achieved, so that the details are not repeated herein to avoid redundancy.
Alternatively, as shown with reference to figures 22 and 23, the imprint template comprises a substrate 101. The step S1 may include: and laying a metal foil on the substrate, and patterning the metal foil to form a second conductive pattern. Here, reference may be made to the relevant descriptions in the first embodiment, and the same or similar beneficial effects may be achieved, so that the details are not repeated herein to avoid redundancy.
Optionally, before the step S1, the method may further include: several metal foil patterns are provided. The imprint template may include a plurality of adsorption regions, and the step S1 may include: and at least aligning one adsorption area and one metal foil pattern, and adsorbing the metal foil pattern on the adsorption area to form a second conductive pattern on the imprinting template. For example, an imprint template may include a substrate and a number of adsorption regions spaced apart on the substrate. The step S1 may include: at least one adsorption area and one metal foil pattern are aligned, and the metal foil pattern is adsorbed on the adsorption area to form a second conductive pattern on the substrate. Alternatively, for example, lands are provided on the substrate, suction regions are provided on the lands, at least one suction region on the land is aligned with one of the metal foil patterns, and the metal foil pattern is sucked onto the suction regions to form the second conductive pattern on the lands of the substrate. Here, reference may be made to the relevant descriptions in the first embodiment, and the same or similar beneficial effects may be achieved, so that the details are not repeated herein to avoid redundancy.
The invention will now be further explained with reference to more detailed examples.
As shown in fig. 4, the second conductive pattern 104 includes a second conductive sub-pattern 1041, a second conductive sub-pattern 1042 and a second conductive sub-pattern 1043, the second conductive sub-pattern 1041 is a tin conductive sub-pattern with a thickness of 1um, the second conductive sub-pattern 1042 is a copper conductive sub-pattern with a thickness of 12um, and the second conductive sub-pattern 1043 is a tin conductive sub-pattern with a thickness of 0.5 um. The second conductive sub-pattern 1041, the second conductive sub-pattern 1042, and the second conductive sub-pattern 1043 are all prepared by deposition and patterning.
In fig. 4, the first conductive pattern 311 is a copper conductive pattern with a thickness of 20nm, and the first conductive pattern 311 is obtained by deposition and patterning. The first conductive pattern 311 and the second conductive pattern 104 are connected together by a third conductive pattern 321 formed by electroplating or electroless plating, and the third conductive pattern 321 may be 3nm copper.
It should be noted that the solar cell, the preparation method of the solar cell and the cell module can be referred to each other, and the same or similar beneficial effects can be achieved.
It should be noted that for simplicity of description, the method embodiments are described as a series of acts, but those skilled in the art should understand that the embodiments are not limited by the described order of acts, as some steps can be performed in other orders or simultaneously according to the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the embodiments of the application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (29)

1. A method for manufacturing a solar cell, comprising:
forming a first conductive pattern or a first conductive film layer on the solar cell body;
forming a second conductive pattern on the imprinting template;
aligning the second conductive pattern with the first conductive pattern, forming a third conductive pattern between the second conductive pattern and the first conductive pattern by electroplating or chemical plating, and connecting the second conductive pattern with the first conductive pattern through the third conductive pattern; or aligning the second conductive pattern with the region of the first conductive film layer where the electrode is to be formed, forming a third conductive pattern between the second conductive pattern and the region of the first conductive film layer where the electrode is to be formed by electroplating or chemical plating, and connecting the second conductive pattern with the region of the first conductive film layer where the electrode is to be formed by the third conductive pattern;
removing the imprinting template;
the forming a first conductive film layer on the solar cell body, after the removing the imprint template, the method further comprises: and removing the part of the first conductive film layer except the region where the electrode is to be formed to form a first conductive pattern.
2. The method of claim 1, wherein prior to electroplating or electroless plating, the method further comprises:
annealing the imprint template on which the second conductive pattern is formed so that the second conductive pattern is recrystallized.
3. The method for manufacturing a solar cell according to claim 1 or 2, wherein before the forming the first conductive pattern or the first conductive film layer on the solar cell body, the method further comprises:
forming a bonding pattern or a bonding film layer on the solar cell body; the bonding pattern or the bonding film layer is used for improving the bonding force between the first conductive pattern or the first conductive film layer and the solar cell body;
the forming of the first conductive pattern or the first conductive film layer on the solar cell body includes:
forming the first conductive pattern or the first conductive film layer on the bonding pattern or the bonding film layer;
the method further comprises the following steps of forming an adhesive film layer on the solar cell body, and after removing the imprinting template: and removing the part of the bonding film layer except the region where the electrode is to be formed to form the bonding pattern.
4. The method of manufacturing a solar cell according to claim 1 or 2, wherein the imprint template includes a first groove; the forming a second conductive pattern on the imprint template includes:
forming the second conductive pattern in the first groove of the imprinting template;
the second conductive patterns are flush with the surface of the side, provided with the first groove, of the imprinting template, or protrude from the surface of the side, provided with the first groove, of the imprinting template.
5. The method of claim 4, wherein the imprint template comprises a substrate, the first groove is disposed on the substrate, and the imprint template further comprises a first boss disposed on the substrate and located at an edge of the first groove; the forming of the second conductive pattern within the first recess of the imprint template includes:
forming the second conductive pattern in the first groove and in an area defined by the first boss;
the second conductive pattern is flush with the surface of the first boss far away from the substrate, or protrudes out of the surface of the first boss far away from the substrate.
6. The method according to claim 4, wherein the area of the cross section of the first groove is gradually reduced in a direction from the notch of the first groove to the groove bottom; wherein the cross section is perpendicular to a stacking direction of the third conductive pattern and the second conductive pattern.
7. The method of claim 1 or 2, wherein the imprint template includes a substrate and a second boss disposed on the substrate;
the forming a second conductive pattern on the imprint template includes:
and forming a second conductive film layer on one side of the imprinting template on which the second boss is formed, wherein the second conductive pattern is a part of the second conductive film layer, which is located on the second boss.
8. The method for manufacturing a solar cell according to claim 7,
the surface of the second boss far away from the substrate is a plane;
or one side of the second boss, which is far away from the substrate, comprises a second groove, wherein the second conductive pattern is flush with a notch of the second groove, or protrudes out of the second groove.
9. The method of claim 1 or 2, wherein the imprint template comprises a substrate, and wherein the forming of the second conductive pattern on the imprint template comprises:
and laying a metal foil on the substrate, and patterning the metal foil to form the second conductive pattern.
10. The method of manufacturing a solar cell according to claim 1 or 2, wherein before forming the second conductive pattern on the imprint template, the method further comprises:
providing a plurality of metal foil patterns;
the imprinting template comprises a plurality of adsorption areas; the forming a second conductive pattern on the imprint template includes: and at least aligning one adsorption area with one metal foil pattern, and adsorbing the metal foil pattern on the adsorption area to form the second conductive pattern.
11. A solar cell, comprising:
a solar cell body;
and a first conductive pattern, a third conductive pattern, and a second conductive pattern sequentially stacked on the solar cell body;
wherein the second conductive pattern and the first conductive pattern are connected together by the third conductive pattern; the grain size of the third conductive pattern increases from a portion near the first conductive pattern to the middle region, and increases from a portion near the second conductive pattern to the middle region.
12. The solar cell of claim 11, wherein the third conductive pattern is proximate to the solar cell body relative to the second conductive pattern;
in the direction far away from the solar cell body, the area of the cross section of the second conductive pattern or a partial region far away from the solar cell body in the second conductive pattern is gradually reduced; wherein the cross section is perpendicular to a stacking direction of the third conductive pattern and the second conductive pattern.
13. The solar cell according to claim 12, wherein a longitudinal cross section of the second conductive pattern or a partial region of the second conductive pattern away from the solar cell body has a shape of a triangle, a trapezoid, or a figure formed by an arc and a line segment connecting two end points of the arc, and a length of the line segment is smaller than or equal to a diameter of a circle corresponding to the arc; wherein the longitudinal section is parallel to a lamination direction of the third conductive pattern and the second conductive pattern.
14. The solar cell of any of claims 11-13, further comprising: and the bonding pattern is arranged between the first conductive pattern and the solar cell body and is used for improving the bonding force between the first conductive pattern and the solar cell body.
15. The solar cell according to any of claims 11-13, characterised in that in the stacking direction of the third conductive pattern and the second conductive pattern, the second conductive pattern consists of at least two layers of second conductive sub-patterns arranged one above the other.
16. A method for manufacturing a solar cell, comprising:
forming a second conductive pattern on the imprint template;
aligning the second conductive pattern with a region of the solar cell body where an electrode is to be formed, forming a third conductive pattern between the second conductive pattern and the region of the solar cell body where the electrode is to be formed by electroplating or electroless plating, and connecting the second conductive pattern with the region of the solar cell body where the electrode is to be formed by the third conductive pattern;
and removing the imprinting template.
17. The method of claim 16, wherein prior to electroplating or electroless plating, the method further comprises:
annealing the imprint template on which the second conductive pattern is formed, so that the second conductive pattern is recrystallized.
18. The method of manufacturing a solar cell according to claim 16 or 17, wherein the imprint template includes a first groove; the forming a second conductive pattern on the imprint template includes:
forming the second conductive pattern in the first groove of the imprinting template;
the second conductive pattern is flush with the surface of the side, provided with the first groove, of the imprinting template, or protrudes out of the surface of the side, provided with the first groove, of the imprinting template.
19. The method of claim 18, wherein the imprint template comprises a substrate, the first recess is disposed on the substrate, and the imprint template further comprises a first boss disposed on the substrate at an edge of the first recess; the forming of the second conductive pattern within the first recess of the imprint template includes:
forming the second conductive pattern in the first groove and in an area defined by the first boss;
the second conductive pattern is flush with the surface of the first boss far away from the substrate, or protrudes out of the surface of the first boss far away from the substrate.
20. The method according to claim 18, wherein the area of the cross section of the first groove is gradually reduced in a direction from the notch of the first groove to the groove bottom; wherein the cross section is perpendicular to a stacking direction of the second conductive pattern and the third conductive pattern.
21. The method of claim 16 or 17, wherein the imprint template comprises a substrate and second mesas on the substrate;
the forming a second conductive pattern on the imprint template includes:
and forming a second conductive film layer on one side of the imprinting template on which the second boss is formed, wherein the second conductive pattern is a part of the second conductive film layer, which is located on the second boss.
22. The method according to claim 21, wherein the surface of the second boss remote from the substrate is planar; or one side of the second boss, which is far away from the substrate, comprises a second groove, wherein the second conductive pattern is flush with a notch of the second groove, or protrudes out of the second groove.
23. The method of claim 16 or 17, wherein the imprint template comprises a substrate, and wherein the forming of the second conductive pattern on the imprint template comprises:
and laying a metal foil on the substrate, and patterning the metal foil to form the second conductive pattern.
24. The method of manufacturing a solar cell according to claim 16 or 17, wherein before forming the second conductive pattern on the imprint template, the method further comprises:
providing a plurality of metal foil patterns;
the imprinting template comprises a plurality of adsorption areas; the forming a second conductive pattern on the imprint template includes: and at least aligning one adsorption area with one metal foil pattern, and adsorbing the metal foil pattern on the adsorption area to form the second conductive pattern.
25. A solar cell, comprising:
a solar cell body;
and a second conductive pattern and a third conductive pattern disposed on the solar cell body;
wherein the second conductive pattern is connected to the solar cell body through the third conductive pattern; the grain size of the third conductive pattern increases from a portion near the solar cell body to the middle region, and increases from a portion near the second conductive pattern to the middle region.
26. The solar cell according to claim 25, wherein the second conductive pattern or a partial region of the second conductive pattern remote from the solar cell body has a cross-sectional area gradually decreasing in a direction away from the solar cell body; wherein the cross section is perpendicular to a stacking direction of the second conductive pattern and the third conductive pattern.
27. The solar cell according to claim 26, wherein the shape of a longitudinal section of the second conductive pattern or a partial region of the second conductive pattern away from the solar cell body is a triangle, a trapezoid, or a figure formed by a segment of a circular arc and a line segment connecting two end points of the circular arc, and the length of the line segment is smaller than or equal to the diameter of a circle corresponding to the circular arc; wherein the longitudinal section is parallel to a lamination direction of the second conductive pattern and the third conductive pattern.
28. The solar cell according to any of claims 25-27, wherein in the stacking direction of the third conductive pattern and the second conductive pattern, the second conductive pattern consists of at least two layers of second conductive sub-patterns arranged in a stack.
29. A battery assembly is characterized by comprising a first packaging adhesive film, a solar battery string and a second packaging adhesive film which are sequentially stacked; the solar cell string is formed by sequentially connecting a plurality of solar cells in series;
wherein the solar cell is as claimed in any one of claims 11-15, 25-28.
CN202210795202.4A 2022-07-07 2022-07-07 Solar cell preparation method, solar cell and cell module Withdrawn CN115064609A (en)

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