CN116844941A - Cleaning method and cleaning equipment for chip stacking structure - Google Patents
Cleaning method and cleaning equipment for chip stacking structure Download PDFInfo
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- CN116844941A CN116844941A CN202311105350.XA CN202311105350A CN116844941A CN 116844941 A CN116844941 A CN 116844941A CN 202311105350 A CN202311105350 A CN 202311105350A CN 116844941 A CN116844941 A CN 116844941A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 213
- 238000000034 method Methods 0.000 title claims abstract description 47
- 239000007788 liquid Substances 0.000 claims abstract description 66
- 239000007921 spray Substances 0.000 claims abstract description 24
- 238000005086 pumping Methods 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000005507 spraying Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000004044 response Effects 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 239000003814 drug Substances 0.000 claims description 5
- 239000002699 waste material Substances 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 11
- 239000003344 environmental pollutant Substances 0.000 abstract description 10
- 231100000719 pollutant Toxicity 0.000 abstract description 10
- 230000008569 process Effects 0.000 description 10
- 238000002156 mixing Methods 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 238000005406 washing Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010288 cold spraying Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000008213 purified water Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The application relates to a cleaning method and cleaning equipment for a chip stacking structure, wherein the method comprises the following steps: s1, determining working pressure in the cleaning cavity according to gap parameters of the chip stacking structure; starting a vacuum pump, and pumping gas in the cleaning cavity to enable the cleaning cavity to be in a negative pressure state; wherein the cleaning cavity accommodates a chip stacking structure; s2, controlling the nozzle to spray cleaning liquid towards the chip stacking structure under the condition that the cleaning cavity is in a negative pressure state and under the condition of no ultrasonic wave and no megasonic wave. According to the method, the chip stacking structure is sprayed and cleaned in the negative pressure state, so that cleaning liquid can fully enter the gaps of the chip stacking structure, pollutants in the gaps are fully contacted with the cleaning liquid, the cleaning effect is improved, and damage to the surface of the chip stacking structure caused by cleaning can be effectively avoided.
Description
Technical Field
The present application relates to the field of semiconductor cleaning technology, and in particular, to a method and apparatus for cleaning a stacked chip structure.
Background
In recent years, with the slowing of moore's law, conventional chips face problems of design complexity and rising manufacturing costs. The industry proposes a chiplet design concept for realizing customization and cost reduction through function segmentation and heterogeneous integration, and has been verified and succeeded in apple, intel and other companies.
In the Chiplet technology, the chip design is split into a plurality of modules with independent functions for manufacturing, and then the modules are integrated together to realize heterogeneous integrated chips, so that the chip design is more flexible and more efficient. However, since different functional modules originate from different wafers, differences in terms of wafer manufacturing process, materials, structures, etc. are involved, and the complexity of the chip manufacturing process is also greatly increased.
Among them, for the cleaning process, the conventional scheme of removing particles in the grooves or the micro-holes using mechanical force such as ultrasonic waves/megasonic waves has the following disadvantages:
(1) Because different process nodes may be used by different modules, the ultrasonic frequency/energy required to clean the different process nodes may be different, so that when ultrasonic/megasonic cleaning is performed, the ultrasonic frequency/energy of a module that can clean a certain process node may not be sufficient for another module to be cleaned or the pattern of the module may be damaged. Even though damage to device structures on a substrate is reduced by increasing system complexity, for example, patent CN109075103a (method and apparatus for cleaning semiconductor substrates), by controlling the energy and time of megasonic waves transmitted to a wafer, this cleaning method still has difficulty in ensuring that a stacked structure can be cleaned well;
(2) Due to the complexity of the stacked structure, the control of ultrasonic/megasonic energy is more difficult, and compared with the cleaning of a single wafer, mechanical damage to the stacked structure is easily caused, for example, under the megasonic action, micro structures such as interconnected micro pillars and the like in the stacked structure may be broken and peeled off, micro defects and stresses in some materials may be further amplified, and in addition, the megasonic wave may accelerate fatigue and aging of the internal structures of the chip.
Disclosure of Invention
Based on the above-mentioned drawbacks in the prior art, the present application aims to provide a method for cleaning a chip stacking structure, which has a good cleaning effect and can effectively avoid damage to the surface of the chip stacking structure caused by cleaning.
Therefore, the application provides the following technical scheme.
The application provides a cleaning method of a chip stacking structure, which comprises the following steps:
s1, determining working pressure in the cleaning cavity according to gap parameters of the chip stacking structure; starting a vacuum pump, and pumping gas in the cleaning cavity to enable the cleaning cavity to be in a negative pressure state; wherein the cleaning cavity accommodates a chip stacking structure;
s2, controlling the nozzle to spray cleaning liquid towards the chip stacking structure under the condition that the cleaning cavity is in a negative pressure state and under the condition of no ultrasonic wave and no megasonic wave.
Preferably, the step S2 further includes:
and (3) defoaming the cleaning fluid flowing to the nozzle.
Preferably, the de-bubbling treatment includes:
and (3) carrying out air extraction treatment on the liquid medicine tank storing the cleaning liquid.
Preferably, the slit parameters include slit depth and/or slit width;
determining the working pressure in the cleaning cavity according to the gap parameters of the chip stacking structure, wherein the working pressure comprises the following steps:
determining the working pressure as a first working pressure in response to the gap parameter being a first value;
determining the working pressure as a second working pressure in response to the gap parameter being a second value;
determining that the operating pressure is a third operating pressure in response to the gap parameter being a third value;
wherein the first value < the second value < the third value; the first operating pressure > the second operating pressure > the third operating pressure.
Preferably, said first value is less than or equal to 2 μm,12000pa is less than or equal to said first operating pressure < 15000pa; and/or the number of the groups of groups,
the second value is 5-20 mu m,8000pa is less than or equal to the second working pressure is less than 12000pa; and/or the number of the groups of groups,
the third value is 50-200 mu m,5000pa is less than or equal to the third working pressure which is less than 8000pa.
Preferably, the spray pressure of the nozzle is 0.3-0.6mpa.
Preferably, the step S2 further includes:
the clamping assembly is controlled to drive the chip stacking structure to rotate; wherein the clamping assembly is used for fixing the chip stacking structure, and the clamping assembly is at least partially positioned in the cleaning cavity.
Preferably, the step S2 further includes:
the clamping assembly drives the chip stacking structure to rotate at a first rotation speed to spray cleaning liquid;
stopping spraying the cleaning liquid, and stopping rotating the clamping assembly or driving the chip stacking structure to rotate at a second rotating speed;
the clamping assembly drives the chip stacking structure to rotate at a third rotating speed to spray the cleaning liquid;
wherein the first rotational speed is less than the second rotational speed is less than the third rotational speed.
Preferably, the first rotating speed is less than or equal to 50r/min; and/or the number of the groups of groups,
the second rotating speed is less than or equal to 150r/min and is more than 50r/min; and/or the number of the groups of groups,
150r/min < the third rotating speed is less than or equal to 600r/min.
Preferably, in at least one step of the step S2, the clamping assembly is configured to operate at intervals of normal and reverse rotation; and/or the number of the groups of groups,
the cleaning liquid is configured to be sprayed alternately in cold and hot.
Preferably, the step S2 further includes:
and after the spray cleaning is finished, breaking vacuum on the cleaning cavity, and discharging the cleaning waste liquid.
Preferably, the method further comprises:
s3, repeating the step S2 for a plurality of times;
s4, performing pure water spray cleaning when the cleaning cavity is in a negative pressure state.
Preferably, the method further comprises:
s5, repeating the step S4 for a plurality of times;
s6, breaking vacuum in the cleaning cavity, recovering normal pressure, and spin-drying or drying the chip stacking structure through hot nitrogen.
Preferably, before turning on the vacuum pump, the method further comprises:
starting a cooling device to enable the cleaning cavity to be at a preset temperature;
starting a heating device to heat the cleaning liquid;
and closing the cleaning cavity to enable the vacuum pump to suck air.
The present application also provides a cleaning apparatus comprising:
the cleaning device comprises a cleaning cavity, wherein a clamping assembly and a nozzle are arranged in the cleaning cavity, and the clamping assembly is used for clamping the chip stacking structure and driving the chip stacking structure to rotate;
a vacuum pump in communication with the cleaning chamber; the vacuum pump is used for pumping the gas in the cleaning cavity.
The application has the following technical effects:
the application provides a cleaning method for a chip stacking structure, which is used for spraying and cleaning the chip stacking structure under a negative pressure state, so that cleaning liquid can fully enter gaps of the chip stacking structure, pollutants in the gaps are fully contacted with the cleaning liquid, and the cleaning effect is improved. Compared with the prior ultrasonic or megasonic cleaning technical scheme, the ultrasonic or megasonic mechanical force can be prevented from damaging the surface of the chip stacking structure. In addition, the working pressure of the cleaning cavity is determined according to the gap parameters, and good cleaning effects can be achieved on different types of chip stacking structures.
Drawings
FIG. 1 is a flow chart of the steps of the method of the present application;
FIG. 2 is a top plan view of the cleaning apparatus of the present application;
FIG. 3 is a schematic view showing an assembled structure of a cleaning device and a cooling device of the present application;
FIG. 4 is a schematic perspective view of a cleaning device according to the present application;
fig. 5 is a side view of the cleaning device of the present application.
Description of the reference numerals
100. A cleaning device;
1. a cleaning device; 11. a vacuum valve; 12. breaking a vacuum valve; 13. a liquid discharge valve;
2. a vacuum pump;
3. a liquid mixing device;
4. a heating device;
5. a cooling device; 51. cooling the container; 52. a second pipe; 53. a third conduit;
6. a first conduit.
Detailed Description
In order to make the technical scheme and the beneficial effects of the application more obvious and understandable, the following detailed description is given by way of example. Unless defined otherwise, technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
In the description of the present application, unless explicitly defined otherwise, terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "height", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., refer to an orientation or positional relationship based on that shown in the drawings, and are merely for convenience of simplifying the description of the present application, and do not indicate that the apparatus or element referred to must have a specific orientation, be constructed and operated in a specific orientation, i.e., are not to be construed as limiting the present application.
In the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as relative importance of the features indicated or the number of technical features indicated. Thus, a feature defining "first", "second" may explicitly include at least one such feature. In the description of the present application, "plurality" means at least two; "plurality" means at least one; unless otherwise specifically defined.
In the present application, the terms "mounted," "connected," "secured," "disposed," and the like are to be construed broadly, unless otherwise specifically limited. For example, "connected" may be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, or can be communicated between two elements or the interaction relationship between the two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless explicitly defined otherwise, a first feature "on", "above", "over" and "above", "below" or "under" a second feature may be that the first feature and the second feature are in direct contact, or that the first feature and the second feature are in indirect contact via an intermediary. Moreover, a first feature "above," "over" and "on" a second feature may be that the first feature is directly above or obliquely above the second feature, or simply indicates that the level of the first feature is higher than the level of the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the level of the first feature is less than the level of the second feature.
The cleaning method of the present application will be described in detail with reference to fig. 1 to 5.
In the present embodiment, as shown in fig. 1 and 2, the chip stack structure cleaning method includes:
s1, determining working pressure in a cleaning cavity of the cleaning device 1 according to gap parameters of a chip stacking structure; starting a vacuum pump 2, and pumping gas in the cleaning cavity to enable the cleaning cavity to be in a negative pressure state of required working pressure; wherein, the cleaning cavity accommodates a chip stacking structure;
s2, controlling the nozzle to spray cleaning liquid towards the chip stacking structure under the condition that the cleaning cavity is in a negative pressure state and under the condition of no ultrasonic wave and no megasonic wave.
Through adopting above-mentioned technical scheme, spray the washing to chip stack structure under negative pressure state for in the cleaning solution can fully get into chip stack structure's gap, be favorable to pollutant in the gap and the abundant contact of cleaning solution, improve the cleaning performance. Damage to the surface of the chip stack structure by mechanical forces of ultrasound or megasonic is also avoided relative to ultrasound or megasonic cleaning. In addition, the working pressure of the cleaning cavity is determined according to the gap parameters, and good cleaning effects can be achieved on different types of chip stacking structures.
Further, step S2 further includes: and (3) defoaming the cleaning fluid flowing to the nozzle. Specifically, the cleaning solution needs to be heated before being led into the cleaning cavity, vaporization can occur in the heating process of the cleaning solution, bubbles are generated, and the bubbles enter the cleaning cavity to influence the working pressure in the cleaning cavity, so that the working pressure of the cleaning cavity and the gap parameters of the chip stacking structure can be prevented from being mismatched due to spraying of the cleaning solution through bubble removal.
Further, the defoaming treatment includes: and (3) pumping the liquid medicine tank for storing the cleaning liquid. Specifically, the cleaning liquid in the liquid medicine box is defoamed by vacuumizing or decompressing, and the operation is simple and quick.
In one embodiment, the gap parameters include a gap depth and/or a gap width, and in general, the gap width of the chip stack structure is greater than the gap depth, and a minimum gap depth results in an increase in difficulty of the cleaning solution entering the gap, and of course, a portion of the gap width of the chip stack structure is less than the gap depth, and a minimum gap width results in an increase in difficulty of the cleaning solution entering the gap. Specifically, the slit parameter is selected from the smaller one of the slit depth and the slit width.
In one embodiment, determining the operating pressure in the cleaning chamber based on the gap parameter of the chip stack structure includes:
determining the working pressure as a first working pressure in response to the slit parameter being a first value;
determining the working pressure as a second working pressure in response to the slit parameter being a second value;
determining the working pressure as a third working pressure in response to the slit parameter being a third value;
wherein the first value is less than the second value is less than the third value; the first operating pressure > the second operating pressure > the third operating pressure. Specifically, when the gap parameter is smaller, the working pressure in the cleaning cavity is configured to be larger, at the moment, the vacuum degree in the cleaning cavity is lower, more gas is contained, the resistance to the gap is increased when the nozzle sprays, so that the impact force of cleaning liquid on the gap is reduced, the gap can be protected from being damaged, the working pressure is increased, the influence of the surface tension of the cleaning liquid can be reduced, and the cleaning liquid can better squeeze the gap and smoothly enter the gap. On the contrary, when the gap parameter is increased, the working pressure in the cleaning cavity is reduced, at the moment, the vacuum degree in the cleaning cavity is increased, the gas content is reduced, and then the resistance received by the spray nozzle during spraying is reduced, so that the cleaning liquid can enter the gap more conveniently.
Further, the first value is less than or equal to 2 μm,12000pa is less than or equal to the first working pressure < 15000pa. For example, in the shallow trench isolation Shallow Trench Isolation (STI) structure, at least one of the gap depth and the gap width is less than or equal to 2 μm, the air pressure in the cleaning chamber is configured to be the first working pressure, the first working pressure is higher, the vacuum degree is lower, more air is contained, the resistance applied when the nozzle sprays can be increased, the cleaning liquid can be ensured to fully enter the gap, and meanwhile, the gap can be protected from damage.
Further, the second value is 5-20 μm,8000 pa.ltoreq.the second working pressure < 12000pa. For example, in a deep interconnection process in a CMOS process, at least one of the gap depth and the gap width is 5-20 μm, the air pressure in the cleaning cavity is configured to be the second working pressure, and the second working pressure is smaller than the first working pressure, at the moment, the vacuum degree is increased, the amount of contained gas is reduced, the resistance applied by the nozzle in spraying can be reduced, the gap is protected from being damaged, and meanwhile, the cleaning liquid can enter the gap more conveniently.
Further, the third value is 50-200 μm,5000pa is less than or equal to the third working pressure is less than 8000pa. For example, in the trench structure formed between the chip and the substrate in the ubm process, at least one of the depth of the slit or the width of the slit is 50-200 μm, the air pressure in the cleaning chamber is configured to be the third working pressure, and the third working pressure is smaller than the second working pressure, at this time, the vacuum value is higher, and the amount of contained gas is smaller, so that the resistance applied by the nozzle during spraying is further reduced, the slit is protected from being damaged, and the cleaning liquid is more convenient to enter the slit.
In one embodiment, the ejection pressure of the nozzle is 0.3-0.6mpa to prevent damage to the pattern or gaps of the chip stack due to excessive ejection pressure. Preferably, the injection pressure remains unchanged throughout the cleaning process for ease of control.
In an embodiment, step S2 further includes: the clamping assembly is controlled to drive the chip stacking structure to rotate; wherein, the clamping component is used for fixed chip stack structure, and the clamping component is located the washing intracavity at least partially to the nozzle of being convenient for carries out the omnidirectional to chip stack structure and sprays, improves the cleaning performance.
It should be understood that when the chip stacking structure is mounted on the clamping assembly, the clamping assembly is controlled to rotate the chip stacking structure, so that the chip stacking structure is located at the position to be cleaned.
Further, step S2 further includes:
s21, the clamping assembly drives the chip stacking structure to rotate at a first rotating speed to spray the cleaning liquid, the first rotating speed is smaller, so that the chip stacking structure is prevented from rotating too fast, the cleaning liquid sprayed on the chip stacking structure is thrown out under the action of centrifugal force when the cleaning liquid does not fully enter a gap, and the cleaning liquid can cover the surface of the chip stacking structure completely, wherein the spraying time can be 15S; preferably, the first rotation speed is less than or equal to 50r/min;
s22, stopping spraying of the cleaning liquid, and stopping rotation of the clamping assembly or driving the chip stacking structure to rotate at a second rotating speed, wherein the second rotating speed is higher than the first rotating speed, so that the cleaning liquid fully infiltrates the bottom and gaps of the chip stacking structure under the action of negative pressure; preferably, 50r/min < second rotation speed is less than or equal to 150r/min;
s23, the clamping assembly drives the chip stacking structure to rotate at a third rotating speed, cleaning liquid is sprayed to flush the chip stacking structure, the third rotating speed is higher than the second rotating speed, and the higher third rotating speed can enable the cleaning liquid to fully react with pollutants in the gaps under the action of centrifugal force, so that the pollutants remained outside and inside the chip stacking structure are fully cleaned; preferably, 150r/min < the third rotation speed is less than or equal to 600r/min; it should be appreciated that during this cleaning process, the cleaning chamber is continually evacuated to maintain the negative pressure value within the cleaning chamber.
Further, in at least one step of step S2, the clamping assembly is configured to perform a forward/reverse rotation interval operation, and the interval time may be configured to be 3S or less, so as to improve the cleaning effect.
Further, in at least one step of step S2, the cleaning liquid is configured to be alternately sprayed with hot and cold water to improve the cleaning effect. Specifically, the cold-hot alternation time may be configured to be 3s or less, the cold temperature is 16-24 ℃, and the hot temperature is 50-60 ℃.
Preferably, in step S22 and step S23, the clamping assembly is configured for a forward and reverse rotation interval operation, and/or the cleaning liquid is configured for alternate hot and cold spraying. In step S21, the clamping assembly is configured to be rotationally driven in one direction, and the cleaning liquid is supplied at a constant temperature (within a range of temperatures), which is advantageous for the entire coverage of the chip stack with the liquid medicine.
In an embodiment, step S2 further includes: after the spray cleaning is finished, the cleaning cavity is broken in vacuum, and the cleaning waste liquid is discharged. Preferably, in the process, the clamping assembly stops rotating or drives the chip stacking structure to rotate at a second rotating speed, wherein 50r/min is less than or equal to 150r/min, so as to keep the surface of the chip stacking structure moist.
In one embodiment, the method further comprises:
s3, repeating the step S2 for a plurality of times, for example, repeating the step for 4 to 8 times to sufficiently clean pollutants;
s4, performing pure water spray cleaning under the condition that the cleaning cavity is in a negative pressure state so as to wash away the pollutants and cleaning liquid remained outside and inside the chip stacking structure.
Further, step S4 includes: starting a vacuum pump, and pumping gas in the cleaning cavity to enable the working pressure of the cleaning cavity to be 5000pa-10000pa, and cleaning pure water under the working pressure, so that pure water can fully enter gaps of the chip stacking structure without damaging the surface of the structure.
Further, the pure water spray cleaning includes:
s41, the clamping assembly drives the chip stacking structure to rotate at a fourth rotating speed, and the fourth rotating speed is smaller, so that pure water fully covers the surface of the chip stacking structure and pure water spraying is carried out; preferably, the fourth rotation speed is less than or equal to 50r/min;
s42, the clamping assembly moves the chip stacking structure to rotate at a fifth rotating speed, the fifth rotating speed is larger than the fourth rotating speed, pure water spraying is carried out, and therefore the pure water washes pollutants and cleaning liquid remained outside and inside the chip stacking structure under the action of centrifugal force; preferably, 150r/min is less than or equal to 600r/min.
Further, in at least one step of step S4, the clamping assembly is configured to perform a forward/reverse rotation interval operation, and the interval time may be configured to be 3S or less, so as to improve the cleaning effect.
Further, in at least one step of step S4, the purified water is configured to be alternately sprayed with hot and cold water to enhance the cleaning effect. Specifically, the cold-hot alternation time may be configured to be 3s or less, the cold temperature is 16-24 ℃, and the hot temperature is 50-60 ℃.
Further, the method further comprises:
s5, repeating the step S4 for a plurality of times, for example, repeating 10-13 times to sufficiently clean the pollutants and cleaning liquid remained outside and inside the stacked structure;
s6, breaking vacuum in the cleaning cavity, recovering normal pressure, spin-drying or drying the chip stacking structure through hot nitrogen, and taking out the chip stacking structure after cleaning.
In one embodiment, before turning on the vacuum pump, the method further comprises:
starting the cooling device 5 to enable the cleaning cavity to be at a preset temperature so as to keep a temperature environment suitable for cleaning;
starting a heating device 4 to heat the cleaning liquid in the liquid mixing device 3 so as to ensure that the temperature of the cleaning liquid is suitable for cleaning; preferably, the heating device 4 is used for maintaining the temperature of the cleaning liquid to be 16-24 ℃ or 50-60 ℃;
closing the cleaning cavity to be pumped by the vacuum pump.
The application also provides cleaning equipment for executing the method. As shown in fig. 2 to 5, the cleaning apparatus 100 includes a cleaning device 1 and a vacuum pump 2, the cleaning device 1 includes a cleaning chamber in which a clamping assembly for clamping a chip stack structure and driving the chip stack structure to rotate is provided, and a nozzle. The vacuum pump 2 is connected with the cleaning cavity through a first pipeline 6, and the cleaning device 1 is provided with a vacuum valve 11, wherein the vacuum valve 11 is used for controlling the opening and closing of the first pipeline 6. During cleaning, the working pressure in the cleaning cavity is determined according to the gap parameters of the chip stacking structure, the gas in the cleaning cavity is pumped by the vacuum pump 2, so that the cleaning cavity is in a negative pressure state of the required working pressure, the working pressure in the cleaning cavity is monitored by the vacuum gauge, and when the working pressure reaches a required value, the clamping assembly is started to rotate.
Through adopting above-mentioned technical scheme, can make the washing intracavity be in the execution washing under the required negative pressure state, like this, the washing liquid can fully get into in the gap of chip stack structure under the negative pressure state, is favorable to pollutant in the gap to fully contact with the washing liquid, improves the cleaning effect. The nozzle sprays and cooperates with the negative pressure environment, replaces the existing ultrasonic or megasonic cleaning technical scheme, and can avoid damage to the surface of the chip stacking structure caused by the mechanical force of ultrasonic or megasonic.
It should be appreciated that the clamping assembly may be any conventional structure, for example, the clamping assembly includes a first driving assembly for driving the clamping jaw to open or close to loosen or clamp the chip stacking structure, a second driving assembly for driving the first driving assembly to rotate, and a clamping jaw driven to rotate by the first driving assembly.
In one embodiment, as shown in fig. 1, the cleaning apparatus 100 further includes a liquid mixing device 3, a heating device 4, and a cooling device 5, where the cooling device 5 is connected to the cleaning device 1, so as to cool the cleaning chamber, so that the temperature in the cleaning chamber is in a temperature environment suitable for cleaning. The heating device 4 is connected with the liquid mixing device 3 and is used for heating the cleaning liquid in the liquid mixing device 3. The liquid mixing device 3 is connected with a nozzle of the cleaning device 1, and is used for mixing the cleaning liquid and spraying the heated cleaning liquid through the nozzle.
Further, as shown in fig. 2, the cooling device 5 includes a cooling container 51, a second pipe 52 and a third pipe 53, two ends of the second pipe 52 are respectively communicated with the cooling container 51 and the cleaning chamber, two ends of the third pipe 53 are respectively communicated with the cooling container 51 and the cleaning chamber to form a cooling circulation path, wherein the second pipe 52 is used for introducing cooling liquid in the cooling container 51 into the cleaning chamber, and the third pipe 53 is used for discharging the cooling liquid in the cleaning chamber after absorbing heat into the cooling container 51. Preferably, the temperature of the cooling liquid is 16-20 ℃.
In one embodiment, as shown in fig. 4 and 5, the cleaning device 1 is provided with a vacuum breaking valve 12 and a waste valve 13, the vacuum breaking valve 12 is used for breaking vacuum in the cleaning cavity, and the waste valve 13 is used for evacuating the cleaning cavity.
In one embodiment, the shape of the nozzle includes, but is not limited to, a cone or a fan, and the angle of the nozzle may be adjusted.
It should be understood that the above examples are illustrative and are not intended to encompass all possible implementations encompassed by the claims. Various modifications and changes may be made in the above embodiments without departing from the scope of the disclosure. Likewise, the individual features of the above embodiments can also be combined arbitrarily to form further embodiments of the application which may not be explicitly described. Therefore, the above examples merely represent several embodiments of the present application and do not limit the scope of protection of the patent of the present application.
Claims (15)
1. A method for cleaning a chip stack structure, comprising:
s1, determining working pressure in the cleaning cavity according to gap parameters of the chip stacking structure; starting a vacuum pump, and pumping gas in the cleaning cavity to enable the cleaning cavity to be in a negative pressure state; wherein the cleaning cavity accommodates a chip stacking structure;
s2, controlling the nozzle to spray cleaning liquid towards the chip stacking structure under the condition that the cleaning cavity is in a negative pressure state and under the condition of no ultrasonic wave and no megasonic wave.
2. The method according to claim 1, wherein the step S2 further comprises:
and (3) defoaming the cleaning fluid flowing to the nozzle.
3. The method of claim 2, wherein the de-bubbling treatment comprises:
and (3) carrying out air extraction treatment on the liquid medicine tank storing the cleaning liquid.
4. The method according to claim 1, characterized in that the slit parameters comprise slit depth and/or slit width;
determining the working pressure in the cleaning cavity according to the gap parameters of the chip stacking structure, wherein the working pressure comprises the following steps:
determining the working pressure as a first working pressure in response to the gap parameter being a first value;
determining the working pressure as a second working pressure in response to the gap parameter being a second value;
determining that the operating pressure is a third operating pressure in response to the gap parameter being a third value;
wherein the first value < the second value < the third value; the first operating pressure > the second operating pressure > the third operating pressure.
5. The method of claim 4, wherein the first value is less than or equal to 2 μm and 12000pa is less than or equal to the first operating pressure < 15000pa; and/or the number of the groups of groups,
the second value is 5-20 mu m,8000pa is less than or equal to the second working pressure is less than 12000pa; and/or the number of the groups of groups,
the third value is 50-200 mu m,5000pa is less than or equal to the third working pressure which is less than 8000pa.
6. The method of any one of claims 1-5, wherein the spray pressure of the nozzle is 0.3-0.6mpa.
7. The method according to any one of claims 1-5, wherein step S2 further comprises:
the clamping assembly is controlled to drive the chip stacking structure to rotate; wherein the clamping assembly is used for fixing the chip stacking structure, and the clamping assembly is at least partially positioned in the cleaning cavity.
8. The method according to claim 7, wherein the step S2 further comprises:
the clamping assembly drives the chip stacking structure to rotate at a first rotation speed to spray cleaning liquid;
stopping spraying the cleaning liquid, and stopping rotating the clamping assembly or driving the chip stacking structure to rotate at a second rotating speed;
the clamping assembly drives the chip stacking structure to rotate at a third rotating speed to spray the cleaning liquid;
wherein the first rotational speed is less than the second rotational speed is less than the third rotational speed.
9. The method of claim 8, wherein the first rotational speed is less than or equal to 50r/min; and/or the number of the groups of groups,
the second rotating speed is less than or equal to 150r/min and is more than 50r/min; and/or the number of the groups of groups,
150r/min < the third rotating speed is less than or equal to 600r/min.
10. The method of claim 8, wherein in at least one of the steps S2, the clamping assembly is configured for a forward and reverse rotation interval operation; and/or the number of the groups of groups,
the cleaning liquid is configured to be sprayed alternately in cold and hot.
11. The method according to any one of claims 1-5, wherein step S2 further comprises:
and after the spray cleaning is finished, breaking vacuum on the cleaning cavity, and discharging the cleaning waste liquid.
12. The method of claim 11, wherein the method further comprises:
s3, repeating the step S2 for a plurality of times;
s4, performing pure water spray cleaning when the cleaning cavity is in a negative pressure state.
13. The method according to claim 12, wherein the method further comprises:
s5, repeating the step S4 for a plurality of times;
s6, breaking vacuum in the cleaning cavity, recovering normal pressure, and spin-drying or drying the chip stacking structure through hot nitrogen.
14. The method of any one of claims 1-5, further comprising, prior to turning on the vacuum pump:
starting a cooling device to enable the cleaning cavity to be at a preset temperature;
starting a heating device to heat the cleaning liquid;
and closing the cleaning cavity to enable the vacuum pump to suck air.
15. A cleaning apparatus, comprising:
the cleaning device (1) comprises a cleaning cavity, wherein a clamping assembly and a nozzle are arranged in the cleaning cavity, and the clamping assembly is used for clamping the chip stacking structure and driving the chip stacking structure to rotate;
a vacuum pump (2) in communication with the cleaning chamber; the vacuum pump (2) is used for pumping the gas in the cleaning cavity.
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| CN117612932A (en) * | 2024-01-02 | 2024-02-27 | 睿智源半导体科技(苏州)有限公司 | Wafer cleaning method and cleaning device |
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