CN116842741B - Mixer, communication device, terahertz mixing diode and design method thereof - Google Patents
Mixer, communication device, terahertz mixing diode and design method thereof Download PDFInfo
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Abstract
The embodiment of the application discloses a mixer, communication equipment, a terahertz mixing diode and a design method thereof, and relates to the technical field of terahertz communication. The method comprises the following steps: according to design parameters of a target diode to be designed, establishing a device three-dimensional model of the target diode; applying driving power based on the device three-dimensional model to perform thermal simulation; performing thermal field analysis on the thermal simulation device three-dimensional model to obtain temperature distribution data of the device three-dimensional model: analyzing the temperature distribution data to obtain a heat distribution rule of the device three-dimensional model; and designing the anode of the device three-dimensional model based on the heat distribution rule. That is, the method obtains a temperature distribution rule through thermal simulation and thermal field analysis, so that a dissipation channel of heat in the diode can be known, the anode of the diode is designed based on the temperature distribution rule, and the influence of a thermal effect can be relieved as much as possible, so that the performance of the diode is improved.
Description
Technical Field
The application relates to the technical field of terahertz communication, in particular to a mixer, communication equipment, a terahertz mixing diode and a design method thereof.
Background
Schottky diodes are the core devices of terahertz solid-state circuits. The schottky diode has the advantages of good high-frequency characteristics, low noise level, rapid switching response, large dynamic range, relatively simple structure and the like, and is widely applied to millimeter wave and terahertz circuits. Diodes play a decisive role in the performance of terahertz solid-state circuits. Whether each parameter of the analog diode can be accurately simulated is a key for designing a terahertz solid-state circuit.
At present, theoretical analysis of the diode stays in the aspect of electromagnetic modeling, and the mixer does not need to be driven with high power, but the thermal effect of the diode also affects the performance of the diode after long-time operation. Therefore, there is a need for a design method for a terahertz mixer diode to improve the performance of the mixer diode for the terahertz frequency band.
It should be noted that the information disclosed in the above background section is only for enhancing understanding of the background of the application and thus may include information that does not form the prior art that is already known to those of ordinary skill in the art.
Disclosure of Invention
The embodiment of the application provides a mixer, communication equipment, a terahertz mixing diode and a design method thereof, aiming at improving the performance of the mixing diode for terahertz frequency bands.
In one aspect, an embodiment of the present application provides a design method for a terahertz mixing diode, including:
According to design parameters of a target diode to be designed, establishing a device three-dimensional model of the target diode;
Applying driving power based on the device three-dimensional model to perform thermal simulation;
Performing thermal field analysis on the thermal simulation device three-dimensional model to obtain temperature distribution data of the device three-dimensional model:
Analyzing the temperature distribution data to obtain a heat distribution rule of the device three-dimensional model;
and designing the anode of the device three-dimensional model based on the heat distribution rule.
Optionally, the step of designing the anode of the three-dimensional model of the device based on the heat distribution rule includes:
according to the driving power, calculating to obtain the anode temperature of the anode of the device three-dimensional model;
Determining that the anode is cylindrical in shape if the anode temperature is greater than a temperature threshold; wherein the temperature threshold is determined based on the heat distribution law.
Optionally, after the step of calculating the anode temperature of the anode of the three-dimensional model of the device according to the driving power, the method further includes:
and under the condition that the temperature of the anode is less than or equal to the temperature threshold value, determining that the shape of the anode is cuboid or quadrangular frustum.
Optionally, after the step of analyzing the temperature distribution data to obtain the heat distribution rule of the three-dimensional device model, the method further includes:
and designing the circuit substrate of the device three-dimensional model based on the heat distribution rule.
Optionally, the step of designing the circuit substrate of the three-dimensional model of the device based on the heat distribution rule includes:
respectively carrying out thermal simulation on the three-dimensional models of the devices for replacing different circuit substrates to obtain the anode junction temperatures respectively corresponding to the circuit substrates;
based on the anode junction temperature corresponding to each circuit substrate, obtaining the diode thermal resistance corresponding to each circuit substrate;
and determining the target circuit substrate with the minimum thermal resistance from different circuit substrates according to the diode thermal resistance corresponding to each circuit substrate.
Optionally, the heat distribution law includes: and heat generated by the anode in the three-dimensional model of the device is transmitted to the bonding pad through the diode substrate and then is radiated through the circuit substrate.
Optionally, the heat distribution rule further includes:
And heat generated by the anode in the three-dimensional model of the device is transmitted to the bonding pad through the substrate and then radiated through the metal cavity of the mixer.
In still another aspect, an embodiment of the present application provides a terahertz mixing diode, where the terahertz mixing diode is obtained based on the foregoing terahertz mixing diode design method.
In yet another aspect, an embodiment of the present application provides a mixer, including the terahertz mixing diode described above.
In yet another aspect, an embodiment of the present application provides a communication device including the aforementioned mixer.
The embodiment of the application provides a mixer, communication equipment, a terahertz mixing diode and a design method thereof, wherein the method comprises the following steps: according to design parameters of a target diode to be designed, establishing a device three-dimensional model of the target diode; applying driving power based on the device three-dimensional model to perform thermal simulation; performing thermal field analysis on the thermal simulation device three-dimensional model to obtain temperature distribution data of the device three-dimensional model: analyzing the temperature distribution data to obtain a heat distribution rule of the device three-dimensional model; and designing the anode of the device three-dimensional model based on the heat distribution rule. That is, the method obtains a temperature distribution rule through thermal simulation and thermal field analysis, so that a dissipation channel of heat in the diode can be known, the anode of the diode is designed based on the temperature distribution rule, and the influence of a thermal effect can be relieved as much as possible, so that the performance of the diode is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an electronic device according to an embodiment of the present application;
fig. 2 is a schematic flow chart of a design method of a terahertz mixing diode according to an embodiment of the present application;
FIG. 3 is a thermal simulation model built in simulation software provided by an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of a three-dimensional model of a device according to an embodiment of the present application;
FIG. 5 is a thermal imaging diagram of channel vortex effects generated by anode position correspondence in thermal simulation of the three-dimensional model of the device of FIG. 4;
FIG. 6 is a graph showing the linear relationship between the anode junction temperature and the thermal resistance at different dissipated powers for a quartz substrate and an AlN substrate, respectively, for a circuit substrate according to an embodiment of the present application.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The main solutions of the embodiments of the present application are: provided are a mixer, a communication device, a terahertz mixing diode, and a design method thereof, the method including: according to design parameters of a target diode to be designed, establishing a device three-dimensional model of the target diode; applying driving power based on the device three-dimensional model to perform thermal simulation; performing thermal field analysis on the thermal simulation device three-dimensional model to obtain temperature distribution data of the device three-dimensional model: analyzing the temperature distribution data to obtain a heat distribution rule of the device three-dimensional model; and designing the anode of the device three-dimensional model based on the heat distribution rule.
In the prior art, terahertz waves refer to electromagnetic waves with the frequency ranging from 0.1 to 10THz, the frequency spectrum of the terahertz waves is positioned between millimeter waves and infrared light waves, and the terahertz waves have the characteristics of microwaves and light waves and have unique characteristics, so that the terahertz technology becomes an important expansion of electronic and photonics research. Compared with microwaves and millimeter waves, the terahertz wave has shorter wavelength and higher frequency band; compared with light waves, the light-emitting diode has stronger transmission characteristics and lower photon energy; the terahertz waves have a series of unique and superior characteristics, so that the terahertz waves have a huge application prospect, and can be widely applied to the fields of radio astronomy, terahertz communication, atmosphere and environment monitoring, radar imaging, medical diagnosis and the like.
Schottky diodes are the core devices of terahertz solid-state circuits. Schottky diodes were first proposed by the german physicist Walter Schottky in 1937 as multi-carrier devices based on metal-semiconductor junctions. Schottky barrier diodes are also known as surface barrier diodes and have a basic structure of metal-semiconductor junctions. In a metal-semiconductor junction, the energy band is discontinuous at the interface and there is excess energy after carrier injection, so the structure is also called a hot carrier diode or a hot electron diode. The schottky diode has the advantages of good high-frequency characteristics, low noise level, rapid switching response, large dynamic range, relatively simple structure and the like, and is widely applied to millimeter wave and terahertz circuits.
The parasitic series resistance and junction capacitance of the diode have been analyzed to have a decisive influence on the performance of the terahertz solid-state circuit. Whether each parameter of the analog diode can be accurately simulated is a key for designing a terahertz solid-state circuit. In the microwave millimeter wave frequency band, the packaging size of the diode is far smaller than the size of the circuit, the packaging of the diode hardly affects the field distribution in the terahertz circuit, and at the moment, parasitic parameters of the diode are substituted into the analog equivalent circuit to accurately simulate the characteristics of the diode. In current terahertz circuit research, thermal effects are often ignored. As the working time increases, the anode thermal effect of the diode becomes more obvious, and the different dies of the diode in the mixer have different thermal effects due to the non-uniformity of processing and assembly, and the structure, the number and the like of the dies of the diode can cause the non-uniformity of output power, thereby causing adverse effects on the mixer circuit.
When the working frequency is increased to the terahertz frequency band, the influence of parasitic parameters of the device is aggravated, corresponding electromagnetic models and circuit models are required to be respectively established, and factors such as the size change of the anode of the device, the characteristic change of materials of each structure and the like are introduced to obtain a high-precision device model. At present, some researches on a terahertz Schottky diode precise modeling technology are performed internationally. In 2004, american students developed three-dimensional modeling study of anti-parallel diode pairs, improving a planar model into a three-dimensional model, and considering the influence of parasitic parameters; in 2011, the university of Cha Erm si in sweden proposes a three-dimensional electromagnetic model of a planar schottky diode, and simultaneously analyzes the influence of parasitic diode parameters on the frequency conversion loss performance of the mixer, and improves the performance of the mixer based on the influence; in 2014, university of alto in finland studied nonlinear temperature parasitic parameters of schottky diode, and introduced the nonlinear temperature parasitic parameters into a device packaging model, and proved that the model can improve the frequency multiplication efficiency of a frequency multiplier.
At present, theoretical analysis of the diode stays in the aspect of electromagnetic modeling, and thermal simulation is not performed on the diode. The mixer does not need to be driven with high power, but the thermal effect of the diode also affects the performance of the diode after long-term operation. As the working time increases, the anode thermal effect of the diode becomes more obvious, and the different dies of the diode in the mixer have different thermal effects due to the non-uniformity of processing and assembly, and the structure, the number and the like of the dies of the diode can cause the non-uniformity of output power, thereby causing adverse effects on the mixer circuit. After the thermal effect is accumulated, the noise performance of the diode is correspondingly deteriorated, and the noise temperature of the mixer is affected, so that the sensitivity of the transmitting and receiving front end is deteriorated. Therefore, the establishment of the thermal, electric and magnetic multidimensional device model of the terahertz diode is the key for carrying out the mixing diode.
Therefore, the application provides a solution, and the temperature distribution rule is obtained through thermal simulation and thermal field analysis, so that the dissipation channel of the heat in the diode can be known, the anode of the diode is designed based on the dissipation channel, the influence of the thermal effect can be relieved as much as possible, and the performance of the diode is improved.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an electronic device in a hardware running environment according to an embodiment of the present application.
As shown in fig. 1, the electronic device may include: a processor 1001, such as a central processing unit (Central Processing Unit, CPU), a communication bus 1002, a user interface 1003, a network interface 1004, a memory 1005. Wherein the communication bus 1002 is used to enable connected communication between these components. The user interface 1003 may include a Display, an input unit such as a Keyboard (Keyboard), and the optional user interface 1003 may further include a standard wired interface, a wireless interface. The network interface 1004 may optionally include a standard wired interface, a wireless interface (e.g., a wireless FIdelity (WI-FI) interface). The Memory 1005 may be a high-speed random access Memory (Random Access Memory, RAM) Memory or a stable Non-Volatile Memory (NVM), such as a disk Memory. The memory 1005 may also optionally be a storage device separate from the processor 1001 described above.
Those skilled in the art will appreciate that the structure shown in fig. 1 is not limiting of the electronic device and may include more or fewer components than shown, or may combine certain components, or may be arranged in different components.
As shown in fig. 1, an operating system, a data storage module, a network communication module, a user interface module, and an electronic program may be included in the memory 1005 as one type of storage medium.
In the electronic device shown in fig. 1, the network interface 1004 is mainly used for data communication with a network server; the user interface 1003 is mainly used for data interaction with a user; the processor 1001 and the memory 1005 in the electronic device of the present application may be provided in the electronic device, where the electronic device invokes the terahertz mixing diode design apparatus stored in the memory 1005 through the processor 1001, and executes the terahertz mixing diode design method provided in the embodiment of the present application.
Referring to fig. 2, an embodiment of the present application provides a design method of a terahertz mixing diode, which is used for the electronic device in the foregoing embodiment, where the electronic device may be a terminal device, for example, a computer device, a mobile phone, a tablet computer, or the like. In this embodiment, the mixer diode is a diode used in a mixer, generally referred to as a schottky diode, which is a core device of a terahertz solid-state circuit.
The method comprises the following steps:
s20, building a device three-dimensional model of a target diode according to design parameters of the target diode to be designed;
In the implementation process, the target diode is a diode to be designed, and the design of the target diode is that the target diode is designed, and design parameters are prepared according to the performance requirement of a base, and the parameter adjustment design is performed on the base.
The device three-dimensional model is a thermal simulation model, and can be established in the existing simulation software. Referring to fig. 3, fig. 3 is a thermal simulation model built in simulation software in the present embodiment. In the figure, the anode junctions of the diodes are numbered, the two anodes from the adjacent cavity to the adjacent substrate are respectively a die 1 and a die 2, and the diodes are arranged on the circuit substrate.
S40, applying driving power based on the device three-dimensional model so as to perform thermal simulation;
In the specific implementation process, in order to simulate the real scene and improve the accuracy of the simulation, the driving power may be the same as or similar to the power in the actual application scene of the diode. After driving power is applied to the three-dimensional model of the device in simulation software, the diode generates a thermal effect.
In the present embodiment, the configuration and parameters of the three-dimensional model of the device are set to be constant when thermal simulation is performed, for example, the shape of the anode, the substrate, and the circuit substrate are all determined. In addition, in this embodiment, the process of performing thermal simulation is mainly described with respect to thermal effect analysis, and the necessary processes of electric and magnetic simulation are performed according to the prior art, which is not described in detail in this embodiment.
S60, performing thermal field analysis on the thermal simulation device three-dimensional model to obtain temperature distribution data of the device three-dimensional model;
in the specific implementation process, when the device three-dimensional model is subjected to thermal simulation, thermal field analysis is performed on the device three-dimensional model, so that temperature distribution data of the device three-dimensional model can be obtained.
S80, analyzing the temperature distribution data to obtain a heat distribution rule of the device three-dimensional model.
In the implementation process, simulation analysis shows that two main dissipation channels of heat generated by the diode anode in the three-dimensional model of the device are transmitted to the bonding pad through the diode substrate and then dissipated through the circuit substrate, and the other two main dissipation channels are transmitted to the bonding pad through the substrate and dissipate heat through the metal cavity of the mixer. From this analysis result, it can be obtained that the diode substrate as a heat transfer medium and the circuit substrate of the heat dissipation point have the greatest influence on the diode thermal characteristics. Wherein, the substrate refers to the substrate of the diode, and the circuit substrate refers to the substrate provided with the diode.
In an alternative embodiment, the heat distribution law includes: and heat generated by the anode in the three-dimensional model of the device is transmitted to the bonding pad through the diode substrate and then is radiated through the circuit substrate.
In an alternative embodiment, the heat distribution rule further includes:
And heat generated by the anode in the three-dimensional model of the device is transmitted to the bonding pad through the substrate and then radiated through the metal cavity of the mixer.
Referring to fig. 4-5, fig. 4 is a schematic cross-sectional structure of a three-dimensional model of a device; FIG. 5 is a thermal imaging diagram of channel vortex effects generated by anode position correspondence during thermal simulation of the three-dimensional model of the device of FIG. 4.
Specifically, in the diode structure corresponding to the device three-dimensional model in fig. 4, the substrate is made of semi-insulating GaAs material, the anode is a pillar, and the diode structure in fig. 4 is a conventional diode structure, and the specific structure and principle of the diode structure are not described in this embodiment.
It is known by analysis that in a diode, the current will close in the bulk conductor, forming a "closed circuit". As can be seen from the analysis of the thermal imaging diagram in fig. 5, in the diode anode surrounding area, a channel eddy current effect is generated at the position of the anode channel, that is, in the red frame area in fig. 5, based on the positional relationship in fig. 5, the eddy current rotates counterclockwise around the anode from the perspective of looking down the anode (that is, from the perspective of looking vertically above in fig. 5). The eddy current generates heat, and the anode is made of metal (usually gold) and has low resistivity, so that the generated eddy current is large, and the generated heat is high, and the high heat is generated near the anode from the simulation result. The anode golden finger in fig. 5 is referred to as an anode.
And S100, designing the anode of the device three-dimensional model based on the heat distribution rule.
In the implementation process, after the heat distribution rule of the diode is obtained, the design can be specifically performed, of course, the design of the anode only relates to one part of the design, and when the design of the anode is performed, the comparison needs to be performed under the assumption that other structures and parameters are not changed.
As an alternative embodiment, the step of designing the anode of the three-dimensional model of the device based on the heat distribution rule includes:
according to the driving power, calculating to obtain the anode temperature of the anode of the device three-dimensional model;
Determining that the anode is cylindrical in shape if the anode temperature is greater than a temperature threshold; wherein the temperature threshold is determined based on the heat distribution law.
It is understood that the anode has a shape including a column, a cuboid, or a quadrangular prism, each of which has advantages and disadvantages, and the cuboid or quadrangular prism has a smaller structural size than the column, which is well known to those skilled in the art, and parasitic resistance can be reduced. The columnar processing is simple, the size is relatively larger, but the parasitic resistance is higher. Therefore, based on this recognition, generally, a cylindrical anode is not used, but a rectangular parallelepiped or quadrangular prism is used.
However, according to the simulation analysis described above in this embodiment, it is found that although the parasitic resistance can be reduced by the rectangular parallelepiped or quadrangular prism, the eddy current effect at the corner is more remarkable in the rectangular parallelepiped or quadrangular prism anode structure, and the heat generated at the same driving power is also higher. In actual work, the temperature of the anode is required to be avoided from being too high, and under the same power driving, the bearing power of each anode can be calculated based on the existing algorithm, so that the temperature is calculated. Setting a temperature threshold (for example, 70 ℃ and according to actual scene requirements), if the temperature is lower than 70 ℃ under a certain power, selecting a cuboid or quadrangular frustum pyramid anode, so that parasitic resistance is smaller and lower loss can be obtained; however, when the temperature is higher, a cylindrical anode is easy to use, and the parasitic resistance is higher, but the eddy current effect is not obvious, and the thermal effect is lower in deterioration of the diode.
In addition, from simulation results, the eddy current effect becomes weaker with the increase of the size, and therefore, the anode structure is changed into a cylindrical shape, and the channel eddy current effect can be relieved. Therefore, in the design method of the present embodiment, the anode shape can be designed to be columnar for the schottky diode in the terahertz mixer. In addition, in the actual processing process, the anodes of the cuboid or the quadrangular prism are processed based on the column, so that the research on the advantages of the column anodes in the embodiment is beneficial to saving the processing steps of the diode and improving the processing efficiency.
Thus, as an alternative embodiment, after the step of calculating the anode temperature of the anode of the three-dimensional model of the device according to the driving power, the method further comprises:
and under the condition that the temperature of the anode is less than or equal to the temperature threshold value, determining that the shape of the anode is cuboid or quadrangular frustum.
Therefore, the temperature distribution rule is obtained through thermal simulation and thermal field analysis by the method, so that a dissipation channel of heat in the diode can be known, the anode of the diode is designed based on the dissipation channel, the influence of a thermal effect can be relieved as much as possible, and the performance of the diode is improved.
In another embodiment, after the step of analyzing the temperature distribution data to obtain the heat distribution rule of the three-dimensional model of the device, the method further includes:
and designing the circuit substrate of the device three-dimensional model based on the heat distribution rule.
In a specific implementation process, it is known from the simulation analysis in the foregoing embodiment that the circuit substrate has a great influence on the thermal characteristics of the diode, so that the circuit substrate based on the thermal distribution rule can be designed according to the three-dimensional model of the device.
Specifically, the step of designing the circuit substrate of the three-dimensional model of the device based on the heat distribution rule includes:
respectively carrying out thermal simulation on the three-dimensional models of the devices for replacing different circuit substrates to obtain the anode junction temperatures respectively corresponding to the circuit substrates;
based on the anode junction temperature corresponding to each circuit substrate, obtaining the diode thermal resistance corresponding to each circuit substrate;
and determining the target circuit substrate with the minimum thermal resistance from different circuit substrates according to the diode thermal resistance corresponding to each circuit substrate.
Specifically, when the simulation design of the circuit substrate is performed, it can be assumed that the structure and parameters of the diode are not changed, and the thermal simulation is performed on the three-dimensional model of the device in which different circuit substrates are replaced. By feeding specific thermal power into the anode port, the corresponding anode junction temperature can be obtained through simulation, and then the thermal resistance of the diode is calculated. Because the thermal resistance is in a linear relation in direct proportion to the anode junction temperature, and the size of the thermal resistance is a parameter for representing the performance of the diode, the lower the thermal resistance is, the higher the thermal conductivity of the circuit substrate is, so that the circuit substrate with lower anode junction temperature in simulation can be selected.
For example, in experiments, see fig. 6, fig. 6 is a graph of anode junction temperature versus thermal resistance for different dissipated powers for a circuit substrate, a quartz substrate and an AlN substrate, respectively. In the figure, it is shown that in the case of three dissipated powers, designated by the subscripts 11, 22, 33, the AlN substrate is smaller in thermal resistance than the quartz substrate, and may be selected as the circuit substrate.
In another embodiment, the present application provides a terahertz mixing diode, which is obtained based on the terahertz mixing diode design method in the foregoing embodiment.
In another embodiment, an embodiment of the present application provides a mixer including the terahertz mixing diode in the foregoing embodiment.
In another embodiment, an embodiment of the present application provides a communication device including the terahertz mixer in the foregoing embodiment.
Furthermore, in an embodiment, the present application also provides a computer storage medium, on which a computer program is stored, which computer program, when being executed by a processor, implements the steps of the method in the previous embodiment.
In some embodiments, the computer readable storage medium may be FRAM, ROM, PROM, EPROM, EEPROM, flash memory, magnetic surface memory, optical disk, or CD-ROM; but may be a variety of devices including one or any combination of the above memories. The computer may be a variety of computing devices including smart terminals and servers.
In some embodiments, the executable instructions may be in the form of programs, software modules, scripts, or code, written in any form of programming language (including compiled or interpreted languages, or declarative or procedural languages), and they may be deployed in any form, including as stand-alone programs or as modules, components, subroutines, or other units suitable for use in a computing environment.
As an example, executable instructions may, but need not, correspond to files in a file system, may be stored as part of a file that holds other programs or data, such as in one or more scripts in a hypertext markup language (HTML, hyper Text Markup Language) document, in a single file dedicated to the program in question, or in multiple coordinated files (e.g., files that store one or more modules, sub-programs, or portions of code).
As an example, executable instructions may be deployed to be executed on one computing device or on multiple computing devices located at one site or distributed across multiple sites and interconnected by a communication network.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The foregoing embodiment numbers of the present application are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. read-only memory/random-access memory, magnetic disk, optical disk), comprising instructions for causing a multimedia terminal device (which may be a mobile phone, a computer, a television receiver, or a network device, etc.) to perform the method according to the embodiments of the present application.
The foregoing disclosure is merely illustrative of some embodiments of the present application and it is not to be construed as limiting the scope of the application, as a person of ordinary skill in the art will appreciate that all or part of the above-described embodiments may be practiced with equivalent variations which fall within the scope of the application as defined in the appended claims.
Claims (9)
1. The design method of the terahertz mixing diode is characterized by comprising the following steps of:
According to design parameters of a target diode to be designed, establishing a device three-dimensional model of the target diode;
Applying driving power based on the device three-dimensional model to perform thermal simulation;
Performing thermal field analysis on the thermal simulation device three-dimensional model to obtain temperature distribution data of the device three-dimensional model:
Analyzing the temperature distribution data to obtain a heat distribution rule of the device three-dimensional model;
designing an anode of the device three-dimensional model based on the heat distribution rule;
according to the driving power, calculating to obtain the anode temperature of the anode of the device three-dimensional model;
Determining that the anode is cylindrical in shape if the anode temperature is greater than a temperature threshold; wherein the temperature threshold is determined based on the heat distribution law.
2. The method of claim 1, further comprising, after the step of calculating an anode temperature of an anode of the three-dimensional model of the device based on the driving power:
and under the condition that the temperature of the anode is less than or equal to the temperature threshold value, determining that the shape of the anode is cuboid or quadrangular frustum.
3. The method according to claim 1, wherein after the step of analyzing the temperature distribution data to obtain a heat distribution law of the three-dimensional model of the device, further comprising:
and designing the circuit substrate of the device three-dimensional model based on the heat distribution rule.
4. The method of claim 3, wherein the step of designing the circuit substrate of the three-dimensional model of the device based on the heat distribution law comprises:
respectively carrying out thermal simulation on the three-dimensional models of the devices for replacing different circuit substrates to obtain the anode junction temperatures respectively corresponding to the circuit substrates;
based on the anode junction temperature corresponding to each circuit substrate, obtaining the diode thermal resistance corresponding to each circuit substrate;
and determining the target circuit substrate with the minimum thermal resistance from different circuit substrates according to the diode thermal resistance corresponding to each circuit substrate.
5. The method according to any one of claims 1-4, wherein the heat distribution law comprises: and heat generated by the anode in the three-dimensional model of the device is transmitted to the bonding pad through the diode substrate and then is radiated through the circuit substrate.
6. The method of claim 5, wherein the heat distribution pattern further comprises:
And heat generated by the anode in the three-dimensional model of the device is transmitted to the bonding pad through the substrate and then radiated through the metal cavity of the mixer.
7. Terahertz mixing diode, characterized in that it is obtained based on the terahertz mixing diode design method according to any one of claims 1-6.
8. A mixer comprising the terahertz mixing diode of claim 7.
9. A communication device comprising the mixer of claim 8.
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