CN115809630A - Thermodynamic model, electrothermal model, temperature prediction method and frequency multiplier simulation method - Google Patents
Thermodynamic model, electrothermal model, temperature prediction method and frequency multiplier simulation method Download PDFInfo
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Abstract
The invention relates to the technical field of terahertz communication, in particular to a thermodynamic model, an electrothermal model, a temperature prediction method and a frequency multiplier simulation method, which are used for terahertz Schottky diodes and comprise an equivalent current source, an equivalent thermal resistor and an equivalent thermal capacitor, wherein the equivalent current source is obtained by equivalent dissipation power of the terahertz Schottky diodes, the equivalent current source is connected with the equivalent thermal resistor in series, and the equivalent thermal resistor and the equivalent thermal capacitor are arranged in parallel. Based on a thermodynamic model, the equivalent thermal resistance and the anode junction temperature of the diode can be obtained, the thermal effect represented by the temperature can be included in harmonic balance simulation of a frequency multiplier in the subsequent terahertz solid-state circuit design process, the accuracy of simulation optimization of the terahertz solid-state circuit is improved, and the simulation optimization result is closer to the actual use condition.
Description
Technical Field
The invention relates to the technical field of terahertz communication, in particular to a thermodynamic model, an electrothermal model, a temperature prediction method and a frequency multiplier simulation method.
Background
Terahertz waves are electromagnetic waves with the frequency ranging from 0.1 to 10THz, the frequency spectrum of the terahertz waves is located between millimeter waves and infrared light waves, the terahertz waves have the characteristics of microwaves and light waves and have unique characteristics, and the terahertz technology becomes an important extension of the research of electronics and photonics.
The Schottky diode is a core device of the terahertz solid-state circuit, and the applicant finds that in the prior art, the simulation optimization of the terahertz solid-state circuit usually adopts a field-circuit combined simulation method, three-dimensional electromagnetic simulation and harmonic balance simulation are combined for use, but the obtained simulation result is greatly different from the actual use condition.
Disclosure of Invention
The invention aims to provide a thermodynamic model, an electrothermal model, a temperature prediction method and a frequency multiplier simulation method, which are used for solving the technical problems in the prior art and mainly comprise the following four aspects:
this application first aspect provides a thermodynamic model for terahertz is schottky diode now, including equivalent current source, equivalent thermal resistance and equivalent thermal capacitance, equivalent current source is obtained by terahertz schottky diode's dissipation power equivalence now, and equivalent current source and equivalent thermal resistance are established ties, equivalent thermal resistance and equivalent thermal capacitance parallel arrangement, equivalent thermal resistance and equivalent thermal capacitance cooperate the heat flow channel who is used for equivalent terahertz schottky diode now.
The application second aspect provides an electric heat model for terahertz is schottky diode now, including electronics model and foretell thermodynamics model, the electronics model includes electron current source, charge source and cascade resistance, electron current source and cascade resistance are established ties, the charge source is parallelly connected with electron current source, and the electronics model is used for exporting the dissipated power.
In a third aspect of the present application, a temperature prediction method for terahertz schottky diode anode temperature prediction is provided, which is based on the above thermodynamic model or the above electrothermal model, and includes the following steps,
step Y100, obtaining the dissipation power of the terahertz Schottky diode
；
Step Y200, the dissipation power is equivalent to an equivalent current source in a thermodynamic model, and then an equivalent thermal resistor is obtained through the thermodynamic model
；
Step Y300, equivalent thermal resistance
Substituting the temperature of the anode into a calculation formula of the temperature of the anode,
in the formula (I), the compound is shown in the specification,
is the temperature of the anode of the terahertz schottky diode,
the initial environment temperature of the thermodynamic model;
obtaining the temperature of the anode of the terahertz Schottky diode
。
Further, in step Y100, circuit parameters of the terahertz schottky diode are acquired, an electronic model of the terahertz schottky diode is established based on the circuit, and the dissipated power of the terahertz schottky diode is acquired by using the electronic model
。
Further, in step Y300, the ambient temperature
At normal temperature.
Further, the temperature prediction method is based on modeling prediction of commercial simulation software.
The fourth aspect of the present application provides a frequency multiplier simulation method for terahertz frequency band based on the above thermodynamic model or the above electrothermal model, comprising the following steps,
step S100, circuit parameters of a terahertz Schottky diode in a frequency multiplier are obtained;
step S200, establishing an electronics model of the terahertz Schottky diode based on circuit parameters to obtain a preliminary electronics model, wherein the environmental temperature of the preliminary electronics model is normal temperature;
step S300, obtaining dissipation power through output of the preliminary electronic model, enabling the dissipation power to be equivalent to an equivalent current source and substituting the equivalent current source into the thermodynamic model to obtain the temperature of the anode of the terahertz Schottky diode
；
Step S400, the temperature is measured
Substituting the optimized circuit parameters into a preliminary electronic model to perform simulation optimization on the terahertz Schottky diode to obtain optimized circuit parameters of the terahertz Schottky diode;
and S500, carrying out overall circuit simulation based on the optimized circuit parameters of the terahertz Schottky diode and the S parameters of the frequency multiplier.
Further, passive circuit simulation is carried out based on the frequency multiplier structure, and S parameters of the frequency multiplier are obtained.
Further, an SPIC parameter is extracted based on the structure of the terahertz Schottky diode, and the SPIC parameter is used as a circuit parameter of the terahertz Schottky diode.
Further, in step S500, performance data of the frequency multiplier is obtained through the whole circuit simulation, whether the performance data meets the requirement is judged, when the performance data cannot meet the requirement, the structure of the frequency multiplier is optimized, then passive circuit simulation is performed based on the optimized frequency multiplier structure to obtain an optimized S parameter of the frequency multiplier, and then the optimized S parameter is substituted into step 500 to perform the whole circuit simulation.
Compared with the prior art, the invention at least has the following technical effects:
based on a thermodynamic model, the equivalent thermal resistance and the anode junction temperature of the terahertz Schottky diode can be obtained, so that the thermal effect of the terahertz Schottky diode is represented, and then the thermal effect can be brought into harmonic balance simulation of a frequency multiplier in the subsequent terahertz solid-state circuit design process, so that the accuracy of simulation optimization of the terahertz solid-state circuit is improved, and the simulation optimization result is closer to the actual use condition.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the embodiments of the present invention or the description of the prior art will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a terahertz Schottky diode thermodynamic model of the present invention;
FIG. 2 is a schematic diagram of an electronic model of a terahertz Schottky diode according to the present invention;
FIG. 3 is a schematic diagram of a terahertz Schottky diode electro-thermal model of the present invention;
fig. 4 is a simulation flowchart of the terahertz frequency multiplier according to the present invention.
Detailed Description
The following description provides many different embodiments, or examples, for implementing different features of the invention. The particular examples set forth below are illustrative only and are not intended to be limiting.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Example 1:
the embodiments of the present application provide a thermodynamic model for a terahertz schottky diode, as shown in fig. 1, in which,
is the power dissipated at the anode junction,
is an equivalent thermal resistance to that of the heat-generating element,
is an equivalent thermal capacitance of the heat-generating element,
is the temperature of the anode of the terahertz schottky diode,
the method comprises the steps that the initial environment temperature of a thermodynamic model is obtained, the thermodynamic model comprises an equivalent current source, an equivalent thermal resistor and an equivalent thermal capacitor, the equivalent current source is obtained by equivalent of dissipation power of a terahertz Schottky diode, the equivalent current source is connected with the equivalent thermal resistor in series, the equivalent thermal resistor and the equivalent thermal capacitor are arranged in parallel, and the equivalent thermal resistor and the equivalent thermal capacitor are cooperatively used for a heat flow channel of the equivalent terahertz Schottky diode.
The Schottky diode is a core device of the terahertz solid-state circuit, and the applicant finds that in the prior art, the simulation optimization of the terahertz solid-state circuit usually adopts a field-circuit combined simulation method, three-dimensional electromagnetic simulation and harmonic balance simulation are combined for use, but the obtained simulation result is different from the actual use condition; in the process of implementing the present invention, the applicant finds that, in the research of a terahertz solid-state circuit, the thermal effect in the circuit is often ignored, whether a mixer or a frequency multiplier is involved in the power conversion during the operation, when an input signal is loaded to a schottky diode pair, a part of input power is transferred to output power after frequency multiplication (frequency multiplier) or frequency conversion (frequency mixer), and the rest of input power is converted to heat to be dissipated at the anode of the diode, so that the temperature of the region near the anode is raised and the performance of the circuit is deteriorated, and as the operating frequency is raised, the area of the anode of the schottky diode is continuously reduced, the thermal effect is more obvious, which causes the problem that the simulation result obtained in the circuit design is different from the actual use condition; in the embodiment, a thermodynamic model of the terahertz schottky diode is added in the terahertz solid-state circuit design process, the equivalent thermal resistor and the equivalent thermal capacitor cooperate with a heat flow channel of the equivalent terahertz schottky diode, the dissipation power of the terahertz schottky diode is equivalent to an equivalent current source, and the dissipation power of the terahertz schottky diode can be directly obtained through the existing electronics model, so that the equivalent thermal resistor and the anode junction temperature of the terahertz schottky diode can be obtained based on the thermodynamic model, the thermal effect of the terahertz schottky diode is represented, and then the thermal effect can be incorporated into harmonic balance simulation of a frequency multiplier in the subsequent terahertz solid-state circuit design process, so that the simulation optimization accuracy of the terahertz solid-state circuit is improved, and the simulation optimization result is closer to the actual use condition.
Example 2:
the embodiment of the application provides an electrothermal model for a terahertz schottky diode, as shown in fig. 2 and 3, in the figures,V(t)is a voltage to be applied to the load,I(t)is the current of the work current and is,
is the total voltage between the anode and cathode of the schottky junction,
is the total current between the cathode and the anode,
is the total charge between the cathode and the anode,
the thermoelectric model comprises an electronic model and a thermodynamic model in embodiment 1, wherein the electronic model comprises an electronic current source, a charge source and a cascade resistor, the electronic current source is connected with the cascade resistor in series, the charge source is connected with the electronic current source in parallel, and the electronic model is used for outputting dissipated power.
When the terahertz solid-state circuit simulation needs to be carried out, extracting SPIC parameters of the terahertz Schottky diode, then establishing an electronics model of the terahertz Schottky diode based on the SPIC parameters, wherein the electronics model comprises an electronic current source, a charge source and a cascade resistor, and the dissipation power of the terahertz Schottky diode can be obtained through output based on the electronics model; then, the dissipation power of the terahertz Schottky diode is equivalent to an equivalent current source in a thermodynamic model (the thermodynamic model is established based on SPIC parameters), then the equivalent thermal resistance of the terahertz Schottky diode can be output and obtained based on the thermodynamic model, and the anode junction temperature of the terahertz Schottky diode can be calculated and obtained according to the equivalent thermal resistance; then, the anode junction temperature of the terahertz Schottky diode is substituted into the electronics model again, so that the terahertz Schottky diode can be subjected to simulation optimization to obtain the working state and performance of the terahertz Schottky diode under the influence of a thermal effect, and the method has important significance for researching and analyzing the terahertz Schottky diode and improving the analysis and simulation accuracy of a frequency multiplier.
Example 3:
the embodiment of the application provides a temperature prediction method for predicting the temperature of an anode of a terahertz schottky diode, which is based on a thermodynamic model in embodiment 1 or an electrothermal model in embodiment 2 and comprises the following steps of,
step Y100, obtaining the dissipation power of the terahertz Schottky diode
(ii) a In some embodiments, an electronic model of the terahertz schottky diode can be established through the SPIC parameters of the terahertz schottky diode, and the dissipated power of the terahertz schottky diode is obtained through the output of the electronic model
；
Step Y200, the dissipation power is equivalent to an equivalent current source in a thermodynamic model, and then an equivalent thermal resistor is obtained through the thermodynamic model
；
Step Y300, equivalent thermal resistance
Substituting the temperature of the anode into a calculation formula of the temperature of the anode,
in the formula (I), the compound is shown in the specification,
is the temperature of the anode of the terahertz schottky diode,
initial environment temperature of the thermodynamic model;
obtaining the temperature of the anode of the terahertz Schottky diode
。
In the terahertz solid-state circuit, a Schottky diode is a core device of the terahertz solid-state circuit, and due to the frequency and size sharing effect, the Schottky diode has high modeling precision requirement and large parasitic parameter influence; in the process of implementing the present invention, the applicant finds that when an input signal is loaded to a schottky diode pair, a part of input power is transferred to output power after frequency multiplication (frequency multiplier) or frequency conversion (frequency mixer), and the rest of input power is converted into heat to be dissipated at the anode of the diode, so that the temperature of the region near the anode rises and the performance of the circuit deteriorates, while with the rise of the operating frequency, the anode area of the schottky diode is continuously reduced, and the heat effect becomes more obvious, and gradually becomes an important factor for limiting the performance of the diode and the maximum bearing power of the circuit; meanwhile, with the maturity of millimeter wave technology, the input power of the terahertz solid-state circuit is continuously improved, so that the temperature of the anode of the terahertz schottky diode is accurately predicted by the method, the influence research of thermal effect on the working state and performance of the terahertz schottky diode is developed, and the method has important significance for improving the analysis and simulation accuracy of the terahertz solid-state circuit.
Specifically, in step Y300, the ambient temperature
At normal temperature.
Specifically, the temperature prediction method is based on modeling prediction by commercial simulation software, and specifically, modeling analysis can be performed by using Workbech software of Ansys corporation.
Example 4:
the embodiment of the present application provides a frequency multiplier simulation method, which is used for a terahertz frequency band, as shown in fig. 4, and is based on a thermodynamic model in embodiment 1 or an electrothermal model in embodiment 2, and includes the following steps,
step S100, circuit parameters of a terahertz Schottky diode in a frequency multiplier are obtained;
s200, establishing an electronic model of the terahertz Schottky diode based on circuit parameters to obtain a preliminary electronic model, wherein the environmental temperature of the preliminary electronic model is normal temperature;
step S300, obtaining dissipation power through output of the primary electronic model, enabling the dissipation power to be equivalent to an equivalent current source and substituting the equivalent current source into the thermodynamic model to obtain an equivalent thermal resistor
(ii) a Equivalent thermal resistance
Substituting the temperature of the anode into a calculation formula of the temperature of the anode,
in the formula (I), the compound is shown in the specification,
is the temperature of the anode of the terahertz schottky diode,
initial environment temperature of the thermodynamic model;
obtaining the temperature of the anode of the terahertz Schottky diode
；
Step S400, the temperature is measured
Substituting the terahertz Schottky diode into a preliminary electronic model, and performing simulation optimization on the terahertz Schottky diode to obtain optimized circuit parameters of the terahertz Schottky diode;
and S500, carrying out overall circuit simulation based on the optimized circuit parameters of the terahertz Schottky diode and the S parameters of the frequency multiplier.
When the working frequency is increased to a terahertz frequency band, the influence of parasitic parameters of the device is intensified, corresponding electromagnetic models and circuit models need to be established respectively, and factors such as size change of an anode of the device, characteristic change of structural materials and the like are introduced to obtain a high-precision device model; the simulation optimization of the terahertz solid-state circuit usually adopts a field-circuit combined simulation method to combine three-dimensional electromagnetic simulation and harmonic balance simulation for use, but in the past terahertz solid-state circuit research, the thermal effect in the circuit is often neglected, so that the accuracy of a simulation result is poor; in this embodiment, when the simulation optimization of the terahertz frequency multiplier is performed, the structure of the frequency multiplier is established first, the SPIC parameter of the terahertz schottky diode is extracted according to the selected frequency multiplier, then the three-dimensional electromagnetic simulation model and the thermodynamic model are established, the dissipation power of the terahertz schottky diode is output by the electronics model, the dissipation power is equivalent to an equivalent current source and is substituted into the thermodynamic model, and the equivalent thermal resistance is obtained
(ii) a Equivalent thermal resistance
Substituting into the anode temperature calculation formula,
in the formula (I), the compound is shown in the specification,
is the temperature of the anode of the terahertz schottky diode,
the initial environment temperature of the thermodynamic model;
obtaining the temperature of the anode of the terahertz Schottky diode
(ii) a Then the temperature is measured again
Substituting the parameters into a preliminary electronic model, and performing simulation optimization on the terahertz Schottky diode to obtain optimized circuit parameters of the terahertz Schottky diode, which is equivalent to adding the thermal effect of the diode into a simulation optimization process to obtain optimized circuit parameters of the terahertz Schottky diode meeting performance requirements under the thermal effect; and then, carrying out overall circuit simulation based on the optimized circuit parameters of the terahertz Schottky diode and the S parameters of the frequency multiplier, and adding the thermal effect into the overall circuit simulation of the frequency multiplier, so that the simulation accuracy of the frequency multiplier is improved, and the frequency multiplier obtained by simulation can be closer to the actual use state.
Specifically, a passive circuit simulation is performed based on the frequency multiplier structure to obtain the S parameter of the frequency multiplier.
Specifically, SPIC parameters are extracted based on the structure of the terahertz Schottky diode, and the SPIC parameters are used as circuit parameters of the terahertz Schottky diode.
Specifically, in step S500, performance data of the frequency multiplier is obtained through the whole circuit simulation, whether the performance data meets the requirement is judged, when the performance data cannot meet the requirement, the structure of the frequency multiplier is optimized, then the passive circuit simulation is performed based on the optimized frequency multiplier structure, an optimized S parameter of the frequency multiplier is obtained, and then the optimized S parameter is substituted into step 500 to perform the whole circuit simulation.
When the terahertz frequency multiplier is designed, the structure of the terahertz frequency multiplier can be established firstly, then passive circuit simulation is carried out, whether the obtained S parameter of the terahertz frequency multiplier meets the expected requirement or not is checked, if the S parameter does not meet the expected requirement, the structure of the terahertz frequency multiplier is optimized and then simulation is carried out again until the S parameter of the terahertz frequency multiplier meets the expected requirement; then, establishing an electronics model and a thermodynamic model according to the selected terahertz Schottky diode so as to obtain the anode temperature of the terahertz Schottky diode and the optimized circuit parameters at the anode temperature; and then carrying out overall circuit simulation based on the optimized circuit parameters of the terahertz Schottky diode and the S parameters of the frequency multiplier, adding the thermal effect into the overall circuit simulation of the frequency multiplier, judging whether the performance of the terahertz frequency multiplier meets the requirement or not, if not, returning to optimize the structure of the terahertz frequency multiplier, and if so, completing the design of the terahertz frequency multiplier.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. A thermodynamic model is used for a terahertz Schottky diode and is characterized by comprising an equivalent current source, an equivalent thermal resistor and an equivalent thermal capacitor, wherein the equivalent current source is obtained by equivalent of dissipation power of the terahertz Schottky diode, the equivalent current source is connected with the equivalent thermal resistor in series, the equivalent thermal resistor and the equivalent thermal capacitor are arranged in parallel, and the equivalent thermal resistor and the equivalent thermal capacitor are cooperatively used for a heat flow channel of the equivalent terahertz Schottky diode.
2. An electrothermal model for a terahertz schottky diode, comprising an electronic model and a thermodynamic model as claimed in claim 1, the electronic model comprising an electronic current source, a charge source and a cascade resistor, the electronic current source being connected in series with the cascade resistor, the charge source being connected in parallel with the electronic current source, the electronic model being configured to output a dissipated power.
3. A temperature prediction method for terahertz Schottky diode anode temperature prediction is characterized in that based on the thermodynamic model of claim 1 or the electrothermal model of claim 2, the method comprises the following steps,
step Y100, obtaining the dissipation power of the terahertz Schottky diode
；
Step Y200, the dissipation power is equivalent to an equivalent current source in a thermodynamic model, and then an equivalent thermal resistance is obtained through the thermodynamic model
；
Step Y300, equivalent thermal resistance
Substituting the temperature of the anode into a calculation formula of the temperature of the anode,
in the formula (I), the compound is shown in the specification,
is the temperature of the anode of the terahertz schottky diode,
the initial environment temperature of the thermodynamic model;
obtaining the temperature of the anode of the terahertz Schottky diode
。
4. The temperature prediction method according to claim 3, wherein in step Y100, circuit parameters of the terahertz Schottky diode are obtained, an electronic model of the terahertz Schottky diode is established based on the circuit, and the dissipated power of the terahertz Schottky diode is obtained by using the electronic model
。
5. The temperature prediction method of claim 4, wherein in step Y300, the ambient temperature
At normal temperature.
6. The temperature prediction method according to any one of claims 3 to 5, wherein the temperature prediction method is based on modeling prediction of Workbench software.
7. A frequency multiplier simulation method for terahertz frequency bands is characterized in that based on the thermodynamic model of claim 1 or the electrothermal model of claim 2, the method comprises the following steps,
step S100, circuit parameters of a terahertz Schottky diode in a frequency multiplier are obtained;
step S200, establishing an electronics model of the terahertz Schottky diode based on circuit parameters to obtain a preliminary electronics model, wherein the environmental temperature of the preliminary electronics model is normal temperature;
step S300, obtaining dissipation power through output of the preliminary electronic model, enabling the dissipation power to be equivalent to an equivalent current source and substituting the equivalent current source into the thermodynamic model to obtain the temperature of the anode of the terahertz Schottky diode
；
Step S400, the temperature is adjusted
Substituting the optimized circuit parameters into a preliminary electronic model to perform simulation optimization on the terahertz Schottky diode to obtain optimized circuit parameters of the terahertz Schottky diode;
and S500, performing overall circuit simulation based on the optimized circuit parameters of the terahertz Schottky diode and the S parameters of the frequency multiplier.
8. The frequency multiplier simulation method of claim 7, wherein a passive circuit simulation is performed based on the frequency multiplier structure to obtain the S-parameters of the frequency multiplier.
9. The frequency multiplier simulation method according to claim 8, wherein SPIC parameters are extracted based on the structure of the thz schottky diode, and the SPIC parameters are used as circuit parameters of the thz schottky diode.
10. The frequency multiplier simulation method according to claim 8 or 9, wherein in step S500, performance data of the frequency multiplier is obtained through the whole circuit simulation, whether the performance data meets the requirements is judged, when the performance data cannot meet the requirements, the frequency multiplier structure is optimized, then passive circuit simulation is performed based on the optimized frequency multiplier structure to obtain optimized S parameters of the frequency multiplier, and then the optimized S parameters are substituted into step 500 for the whole circuit simulation.
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