CN109738779A - Semiconductor junction temperature calculation method, device, computer equipment and storage medium - Google Patents
Semiconductor junction temperature calculation method, device, computer equipment and storage medium Download PDFInfo
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- CN109738779A CN109738779A CN201910094244.3A CN201910094244A CN109738779A CN 109738779 A CN109738779 A CN 109738779A CN 201910094244 A CN201910094244 A CN 201910094244A CN 109738779 A CN109738779 A CN 109738779A
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Abstract
This application involves a kind of semiconductor junction temperature calculation method, device, computer equipment and storage mediums.The described method includes: obtaining the control instruction for passing to semiconductor component；By the control instruction input power loss model, lossy data is obtained；The lossy data is inputted into junction temperature model, obtains semiconductor junction temperature.The acquisition of the electric parameters such as voltage, electric current when avoiding work, simplify hardware implementing architecture and calculation method, and junction temperature situation in actual work can be predicted according to control instruction, early warning is carried out to unusual service condition, reduces the failure rate of semiconductor component and system.
Description
Technical field
This application involves measurement of electric parameter technical field, more particularly to a kind of semiconductor junction temperature calculation method, device,
Computer equipment and storage medium.
Background technique
Semiconductor devices is electric conductivity between good conductor of electricity and insulator, utilizes the special electrical characteristics of semiconductor material
To complete the electronic device of specific function.Such as: for generating, controlling, receive, convert, amplified signal and carry out energy turn
It changes.Semiconductor junction temperature is the actual work temperature of semiconductor devices.Power semiconductor is great-power electronic component and is
Primary Component in system, semiconductor junction temperature when work directly affect the reliability and stabilization of semiconductor devices and place system
Property.
Current traditional technology, the junction temperature of semiconductor calculate the voltage, electric current and the function that need when acquiring its work in real time
The electric parameters such as rate are eventually converted into semiconductor junction temperature by electric parameters such as voltage, electric current and power.But current biography
It is complicated that system technology realizes framework, and can not pre-estimate semiconductor junction temperature situation in actual work.
Summary of the invention
Based on this, it is necessary in view of the above technical problems, it is simple and can predict in actual work to provide a kind of framework
Semiconductor junction temperature calculation method, device, computer equipment and the storage medium of junction temperature.
A kind of semiconductor junction temperature calculation method, which comprises obtain the control instruction for passing to semiconductor component；It will
The control instruction input power loss model, obtains lossy data；The lossy data is inputted into junction temperature model, is partly led
Body junction temperature.
It includes: to obtain institute that the acquisition passes to the control instruction of semiconductor component in one of the embodiments, before
There is power loss corresponding to control instruction；According to all control instructions and the corresponding power loss of all control instructions,
Obtain power loss model.
The control instruction that the acquisition passes to semiconductor component in one of the embodiments, includes: before to multiple
Power semiconductor obtains the power loss of each power semiconductor corresponding to all control instructions respectively；By each single item control
The power loss of the corresponding multiple power semiconductors of system instruction is averaged, and obtains average power consumption；According to each single item control
System instruction and the corresponding average power consumption of each single item control instruction, obtain power loss model.
Power loss corresponding to all control instructions of acquisition includes: to obtain transmitting in one of the embodiments,
To the control instruction of semiconductor component；Obtain the actual input and output electric parameter of each single item control instruction lower semiconductor component；
According to the power loss actually entered under the output corresponding control instruction of electrical parameter calculation.
It is described by the control instruction input power loss model in one of the embodiments, obtain lossy data packet
It includes: obtaining the power loss model under various environmental parameters；Obtain the environmental parameter under current control instruction；According to current control
Environmental parameter under instruction searches the power loss model under corresponding environmental parameter；The control instruction input power is lost
Model obtains lossy data.
It includes: building half that the acquisition passes to the control instruction of semiconductor component in one of the embodiments, before
Conductor equivalent circuit；The semiconductor equivalent circuit is tested, semiconductor heat model is obtained；By the semiconductor heat model
It is converted into the junction temperature model of power loss to junction temperature.
Described in one of the embodiments, that the lossy data is inputted junction temperature model, obtaining semiconductor junction temperature includes:
The lossy data is inputted into junction temperature model, obtains semiconductor junction heating；By semiconductor junction heating and semiconductor heat model
Reference temperature summation, obtain semiconductor junction temperature.
A kind of semiconductor junction temperature computing device, described device include: that control instruction obtains module, pass to half for obtaining
The control instruction of conductor part；Lossy data computing module, for being damaged the control instruction input power loss model
Consume data；Semiconductor junction temperature computing module obtains semiconductor junction temperature for the lossy data to be inputted junction temperature model.
A kind of computer equipment, including memory and processor, the memory are stored with computer program, and feature exists
In the step of processor realizes any of the above-described kind of the method when executing the computer program.
A kind of computer readable storage medium, is stored thereon with computer program, and the computer program is held by processor
The step of method described in realizing any of the above-described kind when row.
Above-mentioned semiconductor junction temperature calculation method obtains the control instruction for passing to semiconductor component first, will acquire
Control instruction input power loss model, obtains lossy data；The lossy data is being inputted into junction temperature model, is obtaining semiconductor
Junction temperature.The acquisition of the electric parameters such as voltage, electric current, simplifies hardware implementing architecture and calculation method when avoiding work, and
Can predict junction temperature situation in actual work according to control instruction, early warning is carried out to unusual service condition, reduce semiconductor component and
The failure rate of system.
Detailed description of the invention
Fig. 1 is the flow diagram of semiconductor junction temperature calculation method in one embodiment；
Fig. 2 is the method flow schematic diagram that power loss model is established in one embodiment；
Fig. 3 is the method flow schematic diagram that power loss model is established in another embodiment；
Fig. 4 is the method flow schematic diagram that junction temperature model is established in one embodiment；
Fig. 5 is the circuit diagram of one embodiment electrical equivalent；
Fig. 6 is the structural block diagram of semiconductor junction temperature computing device in one embodiment；
Fig. 7 is the internal structure chart of computer equipment in one embodiment.
Appended drawing reference: control instruction obtains module 100, lossy data computing module 200, semiconductor junction temperature computing module
300。
Specific embodiment
It is with reference to the accompanying drawings and embodiments, right in order to which the objects, technical solutions and advantages of the application are more clearly understood
The application is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the application, not
For limiting the application.
Power semiconductor is the Primary Component of great-power electronic component and system, when power semiconductor works
When, the reliability and stabilization of system where junction temperature will have a direct impact on power semiconductor and power semiconductor
Property.Traditional semiconductor junction temperature calculation method needs the electric parameters such as voltage and electric current when acquiring its work in real time, realizes
Framework is complex.The control instruction of component is introduced into half where host computer is passed to power semiconductor in the present embodiment
In the calculating of conductor junction temperature, hard-wired framework and calculation method can be simplified, and can be in power semiconductor reality
It is pre-estimated before the work of border in junction temperature situation in actual work, early warning is carried out to unusual service condition, reduces power semiconductor
And the failure rate of system where power semiconductor.
In one embodiment, as shown in Figure 1, providing a kind of semiconductor junction temperature calculation method, comprising the following steps:
Step S102 obtains the control instruction for passing to semiconductor component.
Specifically, traditional junction temperature calculates the electrical ginsengs such as actual current and voltage when must obtain semiconductor work
Number, then is obtained by calculation junction temperature, but under the premise of semiconductor does not damage, loss and host computer when the work of semiconductor
It is sent between the control instruction of semiconductor component that there are certain corresponding relationships.Therefore, it is necessary to obtain host computer to pass to half
The control instruction of conductor part.Wherein, semiconductor component can be semiconductor itself, the component being also possible to where semiconductor.
The present embodiment is not specifically limited.In semiconductor devices work, host computer can send to the component where semiconductor devices and control
System instruction.Obtain the control instruction that host computer passes to semiconductor component.Wherein, host computer is that can directly issue manipulation command
Computer.Control instruction is the total output electric parameter instruction of semiconductor component or output electric parameter waveform instruction.More
Body, electric parameter includes: electric current, voltage and electrical power etc..
Control instruction input power loss model is obtained lossy data by step S104.
Specifically, power loss model can be the corresponding relationship between control instruction and semiconductor power loss；Power
Loss model can also be the function expression between control instruction and semiconductor power loss.The output of semiconductor component is electrical
It may be subjected to the influence of other parameters, such as environment temperature and load characteristic etc. between performance and the loss of semiconductor.Cause
This needs to obtain the power loss model under varying environment parameter to improve the computational accuracy that semiconductor power is lost.Wherein,
Environmental parameter includes environment temperature and load characteristic etc..Firstly, obtaining the power loss model under various environmental parameters, also
It is the power loss model for obtaining power loss model and various environmental parameters combination under a kind of environmental parameter respectively；A kind of ring
Power loss model under the parameter of border is the power loss model at a temperature of obtaining varying environment or the function under different loads characteristic
Rate loss model；The power loss model of various environmental parameters combination is to carry out varying environment temperature and different loads characteristic etc.
Combination, the power loss model of obtained all combined situations.The environmental parameter under current each single item control instruction is obtained again,
In available one or more environmental parameters.It is searched under respective environment parameter according to the environmental parameter under current control instruction
Power loss model, that is, the power loss model under a kind of environmental parameter is searched if obtaining an environmental parameter, such as
Fruit obtains the power loss model that multiple environmental parameters then search various environmental parameters combination.The control instruction input that will acquire
Power loss model, obtains lossy data.Wherein, lossy data can be damage curve, or discrete lossy data.Damage
Consumption curve is the curve that the power loss of semiconductor changes over time.More specifically, when the output electric property of semiconductor component
When being influenced small or unaffected by other parameters between the loss of semiconductor, the function of not environmental parameter also can establish
Rate loss model.In actual operation, environmental parameter can not also be acquired, directly by the not no environmental parameter of control instruction input
Power loss model, obtains lossy data.
Lossy data is inputted junction temperature model, obtains semiconductor junction temperature by step S106.
Specifically, the lossy data being calculated is inputted into junction temperature model first, obtains semiconductor junction heating.It will partly lead again
The heating of body knot is summed with semiconductor heat model reference temperature when building junction temperature model, obtains semiconductor junction temperature.
Above-mentioned semiconductor junction temperature calculation method obtains the control instruction for passing to semiconductor component first, the control that will acquire
Instruction input power loss model processed, obtains lossy data；Lossy data is being inputted into junction temperature model, is obtaining semiconductor junction temperature.
The acquisition of the electric parameters such as voltage, electric current when avoiding work, simplifies hardware implementing architecture and calculation method, and being capable of root
According to control instruction prediction junction temperature situation in actual work, early warning is carried out to unusual service condition, reduces semiconductor component and system
Failure rate.
In one embodiment, as shown in Fig. 2, providing a kind of method for establishing power loss model, including following step
It is rapid:
Step S202 obtains power loss corresponding to all control instructions.
Specifically, when establishing power loss model, need to acquire the data of current system environment.In current system environment
Middle operation current system, and in semiconductor devices work, host computer can send control to the component where semiconductor devices and refer to
It enables, obtains all control instructions that host computer passes to semiconductor component.Wherein all control instructions can be that will export electricity
Gas parameter is sequentially increased to obtain all control instructions.Wherein, host computer is the computer that can directly issue manipulation command.Control
Instruction is the total output electric parameter instruction of semiconductor component or output electric parameter waveform instruction.More specifically, electric parameter
It include: electric current, voltage and electrical power etc..The actual input and output of each single item control instruction lower semiconductor component are obtained electrically to join
Number；Namely measured by electric measurement equipment input voltage, the input current of each control instruction lower semiconductor component with
And the electric parameters such as output power.Further according to the power damage actually entered under the output corresponding control instruction of electrical parameter calculation
Consumption.More specifically, accordingly being controlled according to electrical parameter calculations such as the input voltages, input current and output power of semiconductor component
Power loss under system instruction, that is, input voltage is multiplied with input current and subtracts output power again and obtains power loss.
The formula for calculating power loss in one of the embodiments, can be with are as follows:
Ploss=Vin*Iin-Pout
Wherein, Ploss is power loss；Vin is input voltage；Iin is input current；Pout is output power.
Step S204 obtains power damage according to all control instructions and the corresponding power loss of all control instructions
Consume model.
Specifically, the power loss under the conditions of all control instructions for being sequentially increased output electric parameter is calculated.
Corresponding relationship between control instruction and corresponding semiconductor device power loss is saved.It can also be by control instruction and phase
It answers semiconductor devices power loss to carry out data fitting with mathematical analysis software, obtains control instruction and it is lost in semiconductor power
Between function expression saved.Wherein the softwares such as MATLAB can be used in mathematical analysis software.Namely power loss mould
Type can be the corresponding relationship between control instruction and semiconductor power loss；Power loss model can also for control instruction with
Function expression between semiconductor power loss.Power loss model is implanted into computer, in this way when host computer passes to half
The control instruction of conductor part determines, then the power loss of semiconductor can be further determined according to control instruction.
Above-mentioned power loss model is not consider the power loss model that environmental parameter obtains.When need to environmental parameter into
When row considers, then host computer is obtained first under different environmental parameters and pass to the control instruction of semiconductor component, then obtained
All actual input and output electric parameters of control instruction under respective environment parameter, last basis actually enter output electric parameter
Calculate power loss of the corresponding control instruction under respective environment parameter.According to all environmental parameters, all control instructions and institute
There is the corresponding power loss of control instruction, obtains the power loss model for considering environmental parameter.
The above-mentioned method for establishing power loss model can calculate phase according to control instruction of the host computer to semiconductor component
The power loss for answering control instruction is calculated further according to all control instructions and the corresponding power loss of all control instructions
Power loss model.By the acquisition to control instruction and its power loss, can accurately determine corresponding to control instruction
Power loss further can make the determination of junction temperature more accurate.
In one embodiment, as shown in figure 3, providing another method for establishing power loss model, including it is following
Step:
Step S302 obtains each power corresponding to all control instructions to multiple power semiconductors respectively and partly leads
The power loss of body.
Specifically, in order to which the accuracy for improving initial data can be to multiple semiconductors when establishing power loss model
Component carries out data acquisition.Run current system in current system environment, and in semiconductor devices work, host computer can be to
The control instruction that component where multiple semiconductor devices is sent obtains the institute that host computer passes to multiple semiconductor components respectively
There is control instruction.Wherein all control instructions of each semiconductor can be owned for that will export electric parameter and be sequentially increased
Control instruction.Wherein, host computer is the computer that can directly issue manipulation command.Control instruction is total defeated of semiconductor component
Electric parameter instruction or output electric parameter waveform instruction out.More specifically, electric parameter includes: electric current, voltage and electric work
Rate etc..Obtain actual input and output electric parameter under all control instructions of each semiconductor；Namely pass through electric measurement
Input voltage, input current and the output of each control instruction lower semiconductor component of each semiconductor devices of device measuring
The electric parameters such as power.Further according to the function for actually entering corresponding semiconductor device under the corresponding control instruction of output electrical parameter calculation
Rate loss.More specifically, according to electrical parameter calculations phases such as the input voltages, input current and output power of semiconductor component
The power loss under control instruction is answered, that is, input voltage is multiplied with input current and subtracts output power again and obtains power damage
Consumption.
The formula for calculating power loss in one of the embodiments, can be with are as follows:
Ploss=Vin*Iin-Pout
Wherein, Ploss is power loss；Vin is input voltage；Iin is input current；Pout is output power.
The power loss of multiple power semiconductors corresponding to each single item control instruction is averaged, obtains by step S304
To average power consumption.
Step S306 is obtained according to each single item control instruction and the corresponding average power consumption of each single item control instruction
To power loss model.
Specifically, the mean power damage under the conditions of all control instructions for being sequentially increased output electric parameter is calculated
Consumption.Average power consumption is the corresponding average power consumption of each single item control instruction.By control instruction and corresponding semiconductor device
Corresponding relationship between part average power consumption is saved.It can also be by control instruction and corresponding semiconductor device mean power
Loss carries out data fitting with mathematical analysis software, obtains the function representation between control instruction and semiconductor average power consumption
Formula is saved.Wherein the softwares such as MATLAB can be used in mathematical analysis software.Namely power loss model can be control
Corresponding relationship between instruction and semiconductor power loss；Power loss model can also damage for control instruction and semiconductor power
Function expression between consumption.Power loss model is implanted into computer, in this way when host computer passes to the control of semiconductor component
System instruction determines, then the power loss of semiconductor can be further determined according to control instruction.
Above-mentioned power loss model is not consider the power loss model that environmental parameter obtains.When need to environmental parameter into
When row considers, then host computer is obtained first under different environmental parameters and pass to the control instruction of semiconductor component, then obtained
All actual input and output electric parameters of control instruction under respective environment parameter, last basis actually enter output electric parameter
Calculate power loss of the corresponding control instruction under respective environment parameter.According to all environmental parameters, all control instructions and institute
There is the corresponding average power consumption of control instruction, obtains the power loss model for considering environmental parameter.
The above-mentioned method for establishing power loss model, can be on the basis of single semiconductor devices, and acquisition is multiple partly to be led
The power loss data of body, increases data statistics amount, further improves and obtains the essence of power loss by control instruction
Exactness.
In practical application, can be host computer sends control instruction to semiconductor component, wherein control instruction is power
Instruction then needs power loss when obtaining semiconductor devices different capacity in exploitation, look-up table is made.It is also possible to partly lead
The power loss of body is also related with environmental parameter, and environmental parameter is temperature, then can obtain the look-up table under different temperatures, actually answer
Used time searches the look-up table of corresponding temperature according to the environment temperature detected, searches corresponding power loss further according to control instruction.
In one embodiment, as shown in figure 4, providing a kind of method for establishing junction temperature model, comprising the following steps:
Step S402 constructs semiconductor equivalent circuit.
Specifically, in order to calculate the thermal model of semiconductor, need to establish the equivalent circuit of semiconductor.As shown in figure 5, Fig. 5
For the circuit diagram of one embodiment electrical equivalent.Wherein P (t) be semiconductor devices thermal losses, T be semiconductor junction extremely
The temperature rise of temperature reference plane, Zth are the thermal model impedance from semiconductor junction to temperature reference plane.Thermal model can be equivalent to more
The thermal resistance Rth and thermal capacitance Cth of rank cascade composition, and cascade order is chosen according to the radiating mode of semiconductor and required precision.
Step S404 tests semiconductor equivalent circuit, obtains semiconductor heat model.
Specifically, by testing semiconductor equivalent circuit, the thermal model of semiconductor is obtained.For example, working as semiconductor
It is that can establish semiconductor junction to the equivalent of cooling water temperature using cooling water temperature as reference temperature when passing through water-cooling
Circuit tests equivalent circuit, obtains semiconductor heat model, finally obtains the actual temperature of semiconductor junction.
Semiconductor heat model conversation is junction temperature model of the power loss to junction temperature by step S406.
It specifically, by semiconductor heat model conversation is first multistage filter function of the power loss to junction temperature, then it is this is more
Rank filter function is as junction temperature model.When calculating semiconductor junction temperature according to junction temperature model, the loss number that will be calculated first
According to input junction temperature model, semiconductor junction heating is obtained.Wherein heating can be realized by complex frequency domain, wherein one embodiment
In, Laplace transformation are as follows:
T (s)=P (s) * Zth (s)
Wherein,
Semiconductor junction is heated up again and is summed with semiconductor heat model reference temperature when constructing junction temperature model, semiconductor is obtained
Junction temperature.That is, it is only necessary to which the thermal model and power loss data for obtaining semiconductor heat-dissipating can be obtained by calculation and partly lead
The heating of body knot, in the reference planes temperature that semiconductor junction heating is added to thermal model, it will be able to obtain the junction temperature of semiconductor.Half
The thermal model of conductor now lower can be obtained by special test.
The above-mentioned method for establishing junction temperature model, the power loss of semiconductor will form heat accumulation inside semiconductor, cause
Semiconductor junction temperature rises.In the case where radiating condition is certain, the thermal model of semiconductor can be obtained by test, pass through conversion
It is translated into the multistage filter function of power loss to junction temperature, as junction temperature model.It can be according to thermal model, accurately
The junction temperature for calculating semiconductor, makes the more perfect of junction temperature model construction.
It should be understood that although each step in the flow chart of Fig. 1-4 is successively shown according to the instruction of arrow,
These steps are not that the inevitable sequence according to arrow instruction successively executes.Unless expressly stating otherwise herein, these steps
Execution there is no stringent sequences to limit, these steps can execute in other order.Moreover, at least one in Fig. 1-4
Part steps may include that perhaps these sub-steps of multiple stages or stage are not necessarily in synchronization to multiple sub-steps
Completion is executed, but can be executed at different times, the execution sequence in these sub-steps or stage is also not necessarily successively
It carries out, but can be at least part of the sub-step or stage of other steps or other steps in turn or alternately
It executes.
In one embodiment, as shown in fig. 6, providing a kind of semiconductor junction temperature computing device, comprising: control instruction obtains
Modulus block 100, lossy data computing module 200 and semiconductor junction temperature computing module 300, in which:
Control instruction obtains module 100, for obtaining the control instruction for passing to semiconductor component.
Lossy data computing module 200, for obtaining lossy data for control instruction input power loss model.
Semiconductor junction temperature computing module 300 obtains semiconductor junction temperature for lossy data to be inputted junction temperature model.
Semiconductor junction temperature computing device further include:
Loss model establishes module, for obtaining power loss corresponding to all control instructions；Referred to according to all controls
Order and the corresponding power loss of all control instructions, obtain power loss model.
Loss model establishes module, is also used to obtain corresponding to all control instructions multiple power semiconductors respectively
The power loss of each power semiconductor；The power loss of multiple power semiconductors corresponding to each single item control instruction is taken
Average value obtains average power consumption；According to each single item control instruction and the corresponding mean power of each single item control instruction
Loss, obtains power loss model.
Loss model establishes module further include: control instruction acquiring unit, electric parameter acquiring unit and power loss
Computing unit.
Control instruction acquiring unit, for obtaining the control instruction for passing to semiconductor component.
Electric parameter acquiring unit, for obtaining actual input and output electric parameter under each single item control instruction.
Power loss computing unit, for according to the function actually entered under the output corresponding control instruction of electrical parameter calculation
Rate loss.
Lossy data computing module 200 further include: power loss model acquiring unit, is searched at environmental parameter acquiring unit
Unit and lossy data computing unit.
Power loss model acquiring unit, for obtaining the power loss model under various environmental parameters.
Environmental parameter acquiring unit, for obtaining the environmental parameter under current control instruction.
Searching unit, for searching the damage of the power under corresponding environmental parameter according to the environmental parameter under current control instruction
Consume model.
Lossy data computing unit, for obtaining lossy data for control instruction input power loss model.
Junction temperature model building module, for constructing semiconductor equivalent circuit；Semiconductor equivalent circuit is tested, is obtained
Semiconductor heat model；It is multistage filter function of the power loss to junction temperature by semiconductor heat model conversation, and as junction temperature
Model.
Semiconductor junction temperature computing module 300 further include: semiconductor junction heating computing unit and semiconductor junction temperature calculate list
Member.
Semiconductor junction heating computing unit obtains semiconductor junction heating for lossy data to be inputted junction temperature model.
Semiconductor junction temperature computing unit is obtained for semiconductor junction heating and the reference temperature of semiconductor heat model to be summed
To semiconductor junction temperature.
Specific restriction about semiconductor junction temperature computing device may refer to above for semiconductor junction temperature calculation method
Restriction, details are not described herein.Modules in above-mentioned semiconductor junction temperature computing device can be fully or partially through software, hard
Part and combinations thereof is realized.Above-mentioned each module can be embedded in the form of hardware or independently of in the processor in computer equipment,
It can also be stored in a software form in the memory in computer equipment, execute the above modules in order to which processor calls
Corresponding operation.
In one embodiment, a kind of computer equipment is provided, which can be terminal, internal structure
Figure can be as shown in Figure 7.The computer equipment includes processor, the memory, network interface, display connected by system bus
Screen and input unit.Wherein, the processor of the computer equipment is for providing calculating and control ability.The computer equipment is deposited
Reservoir includes non-volatile memory medium, built-in storage.The non-volatile memory medium is stored with operating system and computer journey
Sequence.The built-in storage provides environment for the operation of operating system and computer program in non-volatile memory medium.The calculating
The network interface of machine equipment is used to communicate with external terminal by network connection.When the computer program is executed by processor with
Realize a kind of semiconductor junction temperature calculation method.The display screen of the computer equipment can be liquid crystal display or electric ink is aobvious
Display screen, the input unit of the computer equipment can be the touch layer covered on display screen, be also possible to computer equipment shell
Key, trace ball or the Trackpad of upper setting can also be external keyboard, Trackpad or mouse etc..
It will be understood by those skilled in the art that structure shown in Fig. 7, only part relevant to application scheme is tied
The block diagram of structure does not constitute the restriction for the computer equipment being applied thereon to application scheme, specific computer equipment
It may include perhaps combining certain components or with different component layouts than more or fewer components as shown in the figure.
In one embodiment, a kind of computer equipment, including memory and processor are provided, is stored in memory
Computer program, the processor perform the steps of when executing computer program
Obtain the control instruction for passing to semiconductor component.By control instruction input power loss model, loss number is obtained
According to.Lossy data is inputted into junction temperature model, obtains semiconductor junction temperature.
In one embodiment, it is also performed the steps of when processor executes computer program
Obtain power loss corresponding to all control instructions.It is opposite according to all control instructions and all control instructions
The power loss answered obtains power loss model.
In one embodiment, it is also performed the steps of when processor executes computer program
Multiple power semiconductors are obtained with the power of each power semiconductor corresponding to all control instructions respectively
Loss.The power loss of multiple power semiconductors corresponding to each single item control instruction is averaged, mean power damage is obtained
Consumption.According to each single item control instruction and the corresponding average power consumption of each single item control instruction, power loss model is obtained.
In one embodiment, it is also performed the steps of when processor executes computer program
Construct semiconductor equivalent circuit.Semiconductor equivalent circuit is tested, semiconductor heat model is obtained.By semiconductor
Thermal model is converted into the multistage filter function of power loss to junction temperature, and as junction temperature model.
In one embodiment, a kind of computer readable storage medium is provided, computer program is stored thereon with, is calculated
Machine program performs the steps of when being executed by processor
Obtain the control instruction for passing to semiconductor component.By control instruction input power loss model, loss number is obtained
According to.Lossy data is inputted into junction temperature model, obtains semiconductor junction temperature.
In one embodiment, it is also performed the steps of when computer program is executed by processor
Obtain power loss corresponding to each single item control instruction.According to all control instructions and all control instruction phases
Corresponding power loss obtains power loss model.
In one embodiment, it is also performed the steps of when computer program is executed by processor
Multiple power semiconductors are obtained with the loss of each power semiconductor corresponding to all control instructions respectively.
The power loss of multiple power semiconductors corresponding to each single item control instruction is averaged, average power consumption is obtained.Root
According to each single item control instruction and the corresponding average power consumption of each single item control instruction, power loss model is obtained.
In one embodiment, it is also performed the steps of when computer program is executed by processor
Construct semiconductor equivalent circuit.Semiconductor equivalent circuit is tested, semiconductor heat model is obtained.By semiconductor
Thermal model is converted into the multistage filter function of power loss to junction temperature, and as junction temperature model.
Those of ordinary skill in the art will appreciate that realizing all or part of the process in above-described embodiment method, being can be with
Relevant hardware is instructed to complete by computer program, the computer program can be stored in a non-volatile computer
In read/write memory medium, the computer program is when being executed, it may include such as the process of the embodiment of above-mentioned each method.Wherein,
To any reference of memory, storage, database or other media used in each embodiment provided herein,
Including non-volatile and/or volatile memory.Nonvolatile memory may include read-only memory (ROM), programming ROM
(PROM), electrically programmable ROM (EPROM), electrically erasable ROM (EEPROM) or flash memory.Volatile memory may include
Random access memory (RAM) or external cache.By way of illustration and not limitation, RAM is available in many forms,
Such as static state RAM (SRAM), dynamic ram (DRAM), synchronous dram (SDRAM), double data rate sdram (DDRSDRAM), enhancing
Type SDRAM (ESDRAM), synchronization link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM
(RDRAM), direct memory bus dynamic ram (DRDRAM) and memory bus dynamic ram (RDRAM) etc..
Each technical characteristic of above embodiments can be combined arbitrarily, for simplicity of description, not to above-described embodiment
In each technical characteristic it is all possible combination be all described, as long as however, the combination of these technical characteristics be not present lance
Shield all should be considered as described in this specification.
The several embodiments of the application above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the concept of this application, various modifications and improvements can be made, these belong to the protection of the application
Range.Therefore, the scope of protection shall be subject to the appended claims for the application patent.
Claims (10)
1. a kind of semiconductor junction temperature calculation method, which is characterized in that the described method includes:
Obtain the control instruction for passing to semiconductor component；
By the control instruction input power loss model, lossy data is obtained；
The lossy data is inputted into junction temperature model, obtains semiconductor junction temperature.
2. the method according to claim 1, wherein it is described obtain pass to semiconductor component control instruction it
Before include:
Obtain power loss corresponding to all control instructions；
According to all control instructions and the corresponding power loss of all control instructions, power loss model is obtained.
3. the method according to claim 1, wherein it is described obtain pass to semiconductor component control instruction it
Before include:
Multiple power semiconductors are obtained with the power loss of each power semiconductor corresponding to all control instructions respectively；
The power loss of multiple power semiconductors corresponding to each single item control instruction is averaged, mean power damage is obtained
Consumption；
According to each single item control instruction and the corresponding average power consumption of each single item control instruction, power loss mould is obtained
Type.
4. the method according to any one of Claims 2 or 3, which is characterized in that all control instructions institutes of acquisition are right
The power loss answered includes:
Obtain the control instruction for passing to semiconductor component；
Obtain the actual input and output electric parameter of each single item control instruction lower semiconductor component；
According to the power loss actually entered under the output corresponding control instruction of electrical parameter calculation.
5. according to the method described in claim 4, it is characterized in that, described by the control instruction input power loss model,
Obtaining lossy data includes:
Obtain the power loss model under various environmental parameters；
Obtain the environmental parameter under current control instruction；
The power loss model under corresponding environmental parameter is searched according to the environmental parameter under current control instruction；
By the control instruction input power loss model, lossy data is obtained.
6. the method according to claim 1, wherein it is described obtain pass to semiconductor component control instruction it
Before include:
Construct semiconductor equivalent circuit；
The semiconductor equivalent circuit is tested, semiconductor heat model is obtained；
It is junction temperature model of the power loss to junction temperature by the semiconductor heat model conversation.
7. according to the method described in claim 6, it is characterized in that, it is described by the lossy data input junction temperature model, obtain
Semiconductor junction temperature includes:
The lossy data is inputted into junction temperature model, obtains semiconductor junction heating；
Semiconductor junction heating and the reference temperature of semiconductor heat model are summed, semiconductor junction temperature is obtained.
8. a kind of semiconductor junction temperature computing device, which is characterized in that described device includes:
Control instruction obtains module, for obtaining the control instruction for passing to semiconductor component；
Lossy data computing module, for obtaining lossy data for the control instruction input power loss model；
Semiconductor junction temperature computing module obtains semiconductor junction temperature for the lossy data to be inputted junction temperature model.
9. a kind of computer equipment, including memory and processor, the memory are stored with computer program, feature exists
In the step of processor realizes any one of claims 1 to 7 the method when executing the computer program.
10. a kind of computer readable storage medium, is stored thereon with computer program, which is characterized in that the computer program
The step of method described in any one of claims 1 to 7 is realized when being executed by processor.
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