CN106023306A - Modeling method of planar GaAs frequency multiplication diode in Terahertz frequency range - Google Patents
Modeling method of planar GaAs frequency multiplication diode in Terahertz frequency range Download PDFInfo
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- CN106023306A CN106023306A CN201610348058.4A CN201610348058A CN106023306A CN 106023306 A CN106023306 A CN 106023306A CN 201610348058 A CN201610348058 A CN 201610348058A CN 106023306 A CN106023306 A CN 106023306A
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- G—PHYSICS
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Abstract
The invention discloses a modeling method of a planar GaAs frequency multiplication diode in the Terahertz frequency range, and relates to the technical field of digital computing or data processing device with specific functions and a data processing method. The method comprises the following steps that a DC test parameter is extracted and a zero-bias junction capacitance of a Schottky diode is calculated via an empirical formula to establish a nonlinear junction model of the Schottky diode in ADS simulated software; a 3D electromagnetic simulated structure model for completing the Schottky diode is established in electromagnetic field simulation software of a high-frequency structure; a frequency multiplier module of the needed application frequency is designed on the basis of the nonlinear junction model and the 3D electromagnetic simulated structure model; and the established nonlinear junction structure of the Schottky diode is corrected via test data. According to the modeling method, the model is described on the basis of the measured empirical formula, the empirical formula is corrected according to a practical test result, and the model is more accurate.
Description
Technical field
The present invention relates to be particularly well-suited to the digital calculating equipment of specific function or data handling equipment or data process side
Law technology field, particularly relates to a kind of plane GaAs frequency doubled diode modeling method in Terahertz frequency range.
Background technology
Broad sense Terahertz (THz) ripple refers to frequency electromagnetic wave in the range of 0.1-10THz, wherein 1THz=
1000GHz.THz ripple occupies the most special position in electromagnetic spectrum, THz technology be International Technology circle generally acknowledge one very
Important intersection Disciplinary Frontiers.
Having carried out both at home and abroad at present much utilizes plane GaAs frequency multiplication Schottky diode to carry out terahertz wave band frequency multiplication source
Research work, the design of times frequency module it is critical only that the Schottky diode model in Terahertz frequency range, model be technique and
The bridge of circuit design, the correctness of model is related to the success or failure of design, how to set up plane GaAs frequency doubled diode too
The accurate model of hertz frequency range, becomes a critically important problem.
Since nineteen nineties, both at home and abroad diode Accurate Model is carried out substantial amounts of work in all its bearings
Make, and have employed different methods it is studied, but in the research of THz frequency range also in the starting stage.It analyzes method
Propose in the world mainly has following 3 kinds: (1) behavioral trait based on measurement or the equivalent-circuit model method of linear theory,
Feature be mode based on apparatus measures be by extract nonlinear parameter set up device equivalent model thus completion system
The optimization design of circuit.It is nonlinear device analysis based on the equivalent-circuit model method of behavioral trait measured and design provides
One rapidly and effectively method；The equivalent-circuit model obtained according to linear theory, can be quick by simple structure
Changing Pattern between each parameter of device.But these are analyzed solving of model and depend on uncertain parameter, especially at THz
Frequency range is due to measuring instrument and the nonlinear parameter limiting very difficult accurate extraction device of measuring method.This also allows for employing etc.
The careful design that the mode of effect circuit modeling realizes THz frequency range device is unrealistic；Equivalent circuit according to linear theory
Modelling cannot the behavioral trait of accurately reaction member.
(2) Guan Bi empirical formula method, its feature: Guan Bi empirical formula method is in physics of semiconductor device, solid-state physics
Physical process when using classical formulas method according to the physical arrangement of device, device to be worked on the basis of, quantum physics
Derive, thus the empirical parameter of acquisition is changed into nonlinear model and is used for the optimization design of circuit system.But based on
The equation of traditional semiconductor device physical basis derivation experience Guan Bi expression formula is the most common at 8 millimeter wave frequency bands, these points
Analysis model can be said to be accurate in 1 ~ 50GHz frequency range, but it cannot describe in whole device operation accurately in higher frequency
Complicated physical phenomena.Especially in THz frequency range quantum effect therethrough, empirical equation is the most inaccurate.
(3) diode Three-Dimensional Electromagnetic Model analytic process, is characterized in that the modeling of diode electromagnetism threedimensional model is up-to-date proposition
Millimeter wave, the important component part of THz nonlinear device advanced design method.1998, University of Virginia J. L.
Hesler proposes diode three-dimensional modeling method based on microprobe in its thesis for the doctorate first, and sets on this basis
Having counted 585GHz frequency mixer, double-side band conversion loss reaches 7.3dB, and noise temperature reaches 2380K.2004, B. Thomas
In its thesis for the doctorate, carry out the research of anti-parallel diodes three-dimensional modeling, considered the impact of parasitic parameter in a model,
And devising 330GHz sub-harmonic mixer, its minimum DSB transition loss reaches 5.7dB.J. L. Hesler place at present
The JPL laboratory at VDI and B. Thomas place, in millimeter wave/THz nonlinear device development, be all in world's neck
First status.Although method analyzed by diode electromagnetism threedimensional model is present analysis THz frequency range device one side more accurately
Method, but still imperfection.J.L. the diode modeling method based on microprobe that the paper of Hesler proposes, solves two poles
Manage the problem that non-linear knot introduces in a model, but in model, parasitic parameter is defaulted as certain value；B. Thomas exists
Improved on the basis of J.L.Hesler model, model considered the problem that parasitic parameter changes with frequency, but still
The factors such as diode rigging error, diode conduction glue thickness, cavity mismachining tolerance that so have ignored are to diode model and whole
The impact of individual circuit model.Domestic processing technique still has many gaps relative to Foreign Advanced Lerel, and the impact of technological factor is not
Negligible, need to take in a model.
The difference of frequency doubled diode and mixer diode be frequency doubled diode anode knot number more, its objective is for
The more input power of carrying, the power injected due to frequency doubled diode is relatively big, and the self-heating effect ratio of diode is more serious, needs
The associated hot effect of diode is considered setting up model when.Simultaneously because Terahertz frequency range is the widest, frequency-division section is needed to build
The model of vertical plane GaAs frequency doubled diode.But both considered the thermoelectricity correction effect of diode junction, it is further contemplated that frequency doubled diode
3 D electromagnetic simulation model, be especially considering that the Matching Model of the grounding ports of diode, there is not yet report.
Summary of the invention
The technical problem to be solved is to provide a kind of plane GaAs frequency doubled diode building in Terahertz frequency range
Mould method, described method utilizes the empirical equation based on measuring to be described model, simultaneously according to actual test result, revises
Empirical equation therein, therefore model is more accurate.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of plane GaAs frequency doubled diode exists
The modeling method of Terahertz frequency range, it is characterised in that described method comprises the steps:
1) check the anode diameter of GaAs base frequency multiplication Schottky diode according to design layout, check GaAs base frequency multiplication Xiao Te simultaneously
Based diode is in actual flow built-in testing anodic size, according to the size results of sem test, and experience
Formula calculates zero inclined junction capacity of described Schottky diode；
2) the GaAs base frequency multiplication Schottky diode machined is carried out DC test, it is thus achieved that GaAs base frequency multiplication Schottky two pole
Pipe current and voltage data in DC test, according to current and voltage data, in conjunction with the calculating of zero inclined junction capacity, simulates at ADS
Software is set up the non-linear knot model of Schottky diode；
3) design layout and the processing technique of GaAs base frequency multiplication Schottky diode are combined, in high-frequency structure electromagnetic field simulation software
In, set up the 3 D electromagnetic simulation architecture model of described Schottky diode；
4) with step 2) the three-dimensional electricity of described diode set up of the non-linear knot model of described diode set up and step 3)
Based on magnetic simulation architecture model, the doubler module of design applying frequency；
5) doubler of design is tested, to test the non-linear of described Schottky diode that data correction has built up
Knot model, and use the 3 D electromagnetic simulation architecture model in the non-linear knot models coupling step 3) of revised diode,
Set up the doubler module of new required applying frequency.
Further technical scheme is: empirical formula concrete in described step 1) is,
WhereinRepresent zero inclined junction capacity,Representing the dielectric constant of GaAs material, A represents the junction area of schottky junction, and D represents Xiao
The diameter of special base junction,Represent the width of depletion layer.
Further technical scheme is: step 2) in use semiconductor parametric tester 4200 to obtain described diode
Current and voltage data in DC test.
Further technical scheme is: step 2) in by DC test, obtain GaAs base frequency multiplication Schottky diode
Series resistance Rs, saturation current Is, and ideal factor n, when breakdown voltage is to reverse current through 10 microamperes, described Xiao Te
The voltage at based diode two ends is breakdown voltage.
Further technical scheme is: set up the Three-Dimensional Electromagnetic Model of Schottky diode in described step 3),
Need to consider diode concrete application in use, and set ripple port necessary to parameter extraction, ripple port
Size is greater than the diameter of anode knot, and anode knot ripple port is coaxial probe ripple port, adds step 2) Schottky set up
Diode non-linear knot model, builds a preliminary GaAs base frequency multiplication Schottky diode circuit level model.
Further technical scheme is: revising GaAs base frequency multiplication Schottky diode non-linear knot model in step 5)
Time, revise ideal factor n, series resistance Rs andJunction capacity.
Further technical scheme is: the applicable frequency range of described model is 100GHz to 500GHz, wherein can divide
The model of Duan Jianli GaAs base frequency multiplication Schottky diode.
Use and have the beneficial effects that produced by technique scheme: described method is based on GaAs base frequency multiplication Schottky two
The real material structure of pole pipe, flow domain and the fabrication error of reality, carry out Three-Dimensional Electromagnetic Model accurately to diode
Set up, and tie and utilize the empirical equation based on measuring to be described, simultaneously according to actual test result, revise experience therein public affairs
Formula, therefore model is more accurate.Because Terahertz frequency range is the widest, the frequency multiplication mid frequency that can design as required, with center frequency
Centered by rate, frequency-division section sets up the model of GaAs base frequency multiplication Schottky diode.Additionally, the process of setting up of model consider heat right
The impact of ideal factor, further increases the accuracy that model is set up.
Accompanying drawing explanation
Fig. 1 is a kind of four anode knot GaAs frequency multiplication Schottky diodes；
Fig. 2 is face-down bonding Schottky diode on a quartz substrate；
Fig. 3 is frequency doubled diode ripple port setting _ incoming wave port；
Fig. 4 is frequency doubled diode ripple port setting _ earth terminal ripple port；
Fig. 5 is that frequency doubled diode wave-wave port setting _ anode ties ripple port
Fig. 6 is the preliminary circuit-level diode model set up；
Fig. 7 is revised circuit-level diode model；
Wherein: 1, anode 2, first wave port the 3, second ripple port the 4, the 3rd ripple port 5, first input port 6, first
Output port the 7, first grounding ports the 8, second grounding ports 9, reference ground.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only a part of embodiment of the present invention rather than whole embodiments.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under not making creative work premise
Embodiment, broadly falls into the scope of protection of the invention.
Elaborate a lot of detail in the following description so that fully understanding the present invention, but the present invention is all right
Using other to be different from alternate manner described here to implement, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
The invention discloses a kind of plane GaAs frequency doubled diode modeling method in Terahertz frequency range, described method is permissible
Completed by following step, concrete say having the frequency doubled diode of four schottky junctions as shown in Figure 1
Bright.
The first step, needs to check according to design layout the anode diameter of GaAs base frequency multiplication Schottky diode, checks simultaneously
GaAs base frequency multiplication Schottky diode is in actual flow built-in testing anodic size, according to the size of sem test
As a result, rule of thumb formula calculates zero inclined junction capacity of Schottky diode.
Concrete computing formula is, whereinRepresent zero inclined junction capacity,Represent the dielectric of GaAs material
Constant, A represents the junction area of schottky junction, and D represents the diameter of schottky junction,Represent the width of depletion layer.With Schottky two
Pole pipe outer layer doping concentration is 2e17cm-3As a example by, it is assumed that anode diameter is 2 microns, and the size of its zero inclined junction capacity is about
6.8fF。
Second step, carries out DC test to the GaAs base frequency multiplication Schottky diode machined, can be based on quasiconductor
Parameter tester 4200 obtains GaAs base frequency multiplication Schottky diode current and voltage data in DC test.
By DC test, series resistance Rs of GaAs base frequency multiplication Schottky diode can be obtained, saturation current Is, with
And ideal factor n, for GaAs base frequency multiplication Schottky diode, its breakdown voltage is also a numerical value the most crucial, breakdown potential
When pressure is to reverse current through 10 microamperes, the voltage at Schottky diode two ends is breakdown voltage.With Schottky diode extension
Layer doping content 2e17cm-3As a example by, it is assumed that anode diameter is 2 microns, and size Rs of its series resistance is generally 1.5 to 5 ohm,
Saturation current Is is generally 10 and arrives 100fA, n value between 1.1 to 1.3.
According to I-V(current-voltage) test, in conjunction with the calculating of junction capacity, Schottky diode can be set up in ADS
Non-linear knot model.Wherein Is value, is as the criterion with the data that test obtains.And ideal factor, series resistance Rs and zero offset knot
Electric capacity, simply an initial value, be not the end value of accurate model.This is due to during frequency multiplication, Schottky diode meeting
Produce stronger self-heating effect, and ideal factor is heated and can change.Series resistance numerical value in the middle of DC test, due to it
Can not reflect the Kelvin effect under high frequency, series resistance Rs can increased.
3rd step, in conjunction with design layout and the processing technique of GaAs base frequency multiplication Schottky diode, at high-frequency structure electromagnetism
Field simulation software sets up the high frequency simulation architecture model of GaAs base frequency multiplication Schottky diode.Foundation completes Schottky two pole
The Three-Dimensional Electromagnetic Model of pipe, needs to consider diode concrete application in use, sets up face-down bonding as shown in Figure 2
3 D electromagnetic phantom on quartz circuit, and set ripple port necessary to parameter extraction, the setting of waveguide mouth is such as
Shown in Fig. 3-Fig. 5.
Illustrate as a example by the Schottky diode of four anode knots is carried out, finally need to extract a S in circuitry software
Parameter bag, the port number of S parameter bag is 8, mainly includes input and output ripple port, two ripple ports of earth terminal and four
Individual anode knot ripple port.The present invention proposes to set up the ripple port setting that anode knot number adds four, if Schottky diode
Anode knot number is 6, then need to set up 10 ripple ports for extracting required parasitic parameter.Concrete incoming wave port is such as
Shown in accompanying drawing 3, output waveguide mouth is the opposite (another parallel surface of cuboid shown in accompanying drawing 3) of plane shown in accompanying drawing 3.Two
Earth terminal ripple port is the ripple port 3 shown in accompanying drawing 4 and the opposite of shown waveguide mouth 3 plane.Accompanying drawing 5 is frequency doubled diode sun
Pole knot ripple port, anode knot ripple port is 4, and it is identical with the anode tie region in accompanying drawing 1 that concrete ripple port arranges position.Ripple
The size of port will be less times greater than the diameter of anode knot.Anode knot ripple port is coaxial probe ripple port.Add the first step to build
Vertical Schottky diode non-linear knot model, it is possible to build a preliminary GaAs base frequency multiplication Schottky diode circuit-level
Model, the initial circuit level model of foundation is as shown in Figure 6.
4th step, the diode 3 D electromagnetic mould that the nonlinear diode knot model set up with second step and the 3rd step are set up
Based on type, design the doubler module of a required applying frequency, with the test data correction of doubler have built up again
Frequently diode model.
5th step, as shown in Figure 7, revises the GaAs base frequency multiplication Schottky diode model set up.Mainly revise
The knot model of the GaAs base non-linear knot of frequency multiplication Schottky diode, revises ideal factor, series resistance and junction capacity.With the 4th
Based on the test data of step, by revising ideal factor, series resistance and junction capacity, owing to being to produce during frequency multiplication
Heat effect, ideal factor can reduce, the ideal factor that the ideal factor therefore revised can obtain less than DC test.Due to high frequency
Kelvin effect, the series resistance that revised serial electronic can obtain more than DC test.Junction capacity should be around value of calculation
It is optimized in the excursion of about 5fF.Revised diode junction nonlinear model combines Three-Dimensional Electromagnetic Model so that mould
Doubler data and the actual test data of intending emulation match.Think that revised model is diode at this application band
Accurate model.
Wider in view of Terahertz band limits, the applicable frequency range of this model is 100GHz to 500GHz.Wherein may be used
Set up the model of GaAs base frequency multiplication Schottky diode with segmentation, specifically can carry out segmentation according to mid frequency to be designed and build
Vertical.Such as can set up a model with 100GHz-170GHz；170GHz-220GHz sets up a segment model.
Model based on the GaAs base frequency multiplication Schottky diode that the method is set up, posts owing to considering the three-dimensional of diode
Raw parametric model, the foundation of threedimensional model is according to actual domain and the test result of flow simultaneously, and the extraction of parasitic parameter is very
Standard, due to the self-heating effect produced during considering frequency doubled diode, have modified the non-linear knot model of diode, foundation
Model is the most accurate.
Claims (7)
1. a plane GaAs frequency doubled diode is in the modeling method of Terahertz frequency range, it is characterised in that described method includes as follows
Step:
1) check the anode diameter of GaAs base frequency multiplication Schottky diode according to design layout, check GaAs base frequency multiplication Xiao Te simultaneously
Based diode is in actual flow built-in testing anodic size, according to the size results of sem test, and experience
Formula calculates zero inclined junction capacity of described Schottky diode；
2) the GaAs base frequency multiplication Schottky diode machined is carried out DC test, it is thus achieved that GaAs base frequency multiplication Schottky two pole
Pipe current and voltage data in DC test, according to current and voltage data, in conjunction with the calculating of zero inclined junction capacity, simulates at ADS
Software is set up the non-linear knot model of Schottky diode；
3) design layout and the processing technique of GaAs base frequency multiplication Schottky diode are combined, in high-frequency structure electromagnetic field simulation software
In, set up the 3 D electromagnetic simulation architecture model of described Schottky diode；
4) with step 2) the three-dimensional electricity of described diode set up of the non-linear knot model of described diode set up and step 3)
Based on magnetic simulation architecture model, the doubler module of design applying frequency；
5) doubler of design is tested, to test the non-linear of described Schottky diode that data correction has built up
Knot model, and use the 3 D electromagnetic simulation architecture model in the non-linear knot models coupling step 3) of revised diode,
Set up the doubler module of new required applying frequency.
2. plane GaAs frequency doubled diode as claimed in claim 1 is in the modeling method of Terahertz frequency range, it is characterised in that:
Empirical formula concrete in described step 1) is, whereinRepresent zero inclined junction capacity,Generation
The dielectric constant of table GaAs material, A represents the junction area of schottky junction, and D represents the diameter of schottky junction,Represent depletion layer
Width.
3. plane GaAs frequency doubled diode as claimed in claim 1 is in the modeling method of Terahertz frequency range, it is characterised in that: step
Rapid 2) semiconductor parametric tester 4200 is used to obtain described diode current and voltage data in DC test in.
4. plane GaAs frequency doubled diode as claimed in claim 1 is in the modeling method of Terahertz frequency range, it is characterised in that: step
Rapid 2) by DC test in, series resistance Rs of GaAs base frequency multiplication Schottky diode, saturation current Is, and ideal are obtained
Factor of n, when breakdown voltage is to reverse current through 10 microamperes, the voltage at described Schottky diode two ends is breakdown voltage.
5. plane GaAs frequency doubled diode as claimed in claim 1 is in the modeling method of Terahertz frequency range, it is characterised in that: institute
State the Three-Dimensional Electromagnetic Model having set up Schottky diode in step 3), need to consider diode in use concrete
Application, and set ripple port necessary to parameter extraction, the size of ripple port is greater than the diameter of anode knot, anode knot ripple end
Mouthful be coaxial probe ripple port, add step 2) the Schottky diode non-linear knot model set up, build one preliminary
GaAs base frequency multiplication Schottky diode circuit level model.
6. plane GaAs frequency doubled diode as claimed in claim 1 is in the modeling method of Terahertz frequency range, it is characterised in that: step
Rapid 5) in revise GaAs base frequency multiplication Schottky diode non-linear knot model time, revise ideal factor n, series resistance Rs andJunction capacity.
7. plane GaAs frequency doubled diode as claimed in claim 1 is in the modeling method of Terahertz frequency range, it is characterised in that: institute
The applicable frequency range stating model is 100GHz to 500GHz, and wherein sectional sets up the mould of GaAs base frequency multiplication Schottky diode
Type.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116842741A (en) * | 2023-07-10 | 2023-10-03 | 四川太赫兹通信有限公司 | Mixer, communication device, terahertz mixing diode and design method thereof |
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| CN116842741A (en) * | 2023-07-10 | 2023-10-03 | 四川太赫兹通信有限公司 | Mixer, communication device, terahertz mixing diode and design method thereof |
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