CN116798929B - Ceramic vacuum chuck suitable for adsorbing wafer and production method for reducing surface scratch rate of wafer - Google Patents
Ceramic vacuum chuck suitable for adsorbing wafer and production method for reducing surface scratch rate of wafer Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 60
- 238000004140 cleaning Methods 0.000 claims abstract description 53
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 24
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011159 matrix material Substances 0.000 claims abstract description 13
- 238000000608 laser ablation Methods 0.000 claims abstract description 10
- 238000005406 washing Methods 0.000 claims abstract description 9
- 239000011148 porous material Substances 0.000 claims description 41
- 238000011068 loading method Methods 0.000 claims description 4
- 238000000149 argon plasma sintering Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 26
- 235000012431 wafers Nutrition 0.000 abstract description 26
- 238000001179 sorption measurement Methods 0.000 abstract description 20
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000000052 comparative effect Effects 0.000 description 47
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 18
- 239000013618 particulate matter Substances 0.000 description 10
- 238000001035 drying Methods 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 235000006408 oxalic acid Nutrition 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 239000012766 organic filler Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000002309 gasification Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000006748 scratching Methods 0.000 description 2
- 230000002393 scratching effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000009770 conventional sintering Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention relates to the technical field of ceramic vacuum chucks for the semiconductor industry, and discloses a ceramic vacuum chuck suitable for adsorbing wafers and a production method for reducing the surface scratch rate of the wafers. The ceramic vacuum chuck comprises a chuck base and porous ceramic arranged on the chuck base, wherein the porous ceramic is prepared by the following steps: the method comprises the steps of taking internally sintered compact silicon carbide ceramic as a matrix, generating air holes on the silicon carbide ceramic by adopting a laser ablation method, cleaning the silicon carbide ceramic in hydrofluoric acid solution, taking out, ultrasonically cleaning in isopropanol, and washing with water; the ultrasonic power is 20-100W, and the ultrasonic cleaning time is more than or equal to 30min. The ceramic vacuum chuck is not easy to produce particle falling and blockage, has strong initial adsorption capacity and stable adsorption capacity after long-time use, can customize an adsorption structure according to requirements, and can meet the requirements of high-end semiconductor manufacturing process.
Description
Technical Field
The invention relates to the technical field of ceramic vacuum chucks for the semiconductor industry, in particular to a ceramic vacuum chuck suitable for adsorbing wafers and a production method for reducing the surface scratch rate of the wafers.
Background
Semiconductor processing widely uses ceramic vacuum chucks as the loading and transporting means for wafers. The ceramic vacuum chuck comprises a chuck base, microporous ceramic and other components. The microporous ceramic is used as an adsorption component of the ceramic vacuum chuck, and the air in the holes is extracted to form vacuum and adsorb the wafer, so that the microporous ceramic has the advantage of uniform adsorption force.
However, at present, microporous ceramics mostly produce pores through chemical reaction during sintering, or adopt organic filler ablation to form pores. Because the sintered microporous ceramic is insufficient in internal reaction or the pore-forming filler is unevenly distributed, structural weak points exist in the microporous ceramic, particles with poor internal strength of the microporous ceramic can fall off due to repeated adsorption and inflation when wafers are loaded or transported, so that the pores can be blocked, and the adsorption capacity of the sucker is reduced. Meanwhile, the pore path, pore size and uniformity of the sintered microporous ceramic cannot be precisely controlled due to the fact that the reaction path cannot be controlled and the distribution uniformity of the organic filler is guaranteed,and a large number of non-penetrable invalid air holes are formed, the proportion of the invalid air holes reaches about 10%, the processing difficulty and the cleaning difficulty are increased, and the particles generated by processing are difficult to clean. The particles may scratch the wafer surface after falling off, and the use requirement of high-end manufacturing process cannot be met. Bai et al (Fabrication of directional SiC porous ceramics using Fe) 2 O 3 as pore-forming agent[J]Materials letters 2012, 78: l 92-194.) Fe is used 2 O 3 As a high-temperature pore-forming agent, the porous SiC ceramic can be prepared, the porosity can reach 80% at most, but the research on the effectiveness of pores and particles in the pores is not involved. There is no report on how to reduce the generation of particulate matter to improve the quality of porous ceramics.
Disclosure of Invention
Aiming at the problem that the adsorption capacity is reduced due to falling and blocking of particles after the ceramic vacuum chuck using the conventional microporous ceramic is repeatedly used, the invention aims to provide the ceramic vacuum chuck suitable for adsorbing wafers, the ceramic vacuum chuck is not easy to cause blocking of air holes by particles in the repeated use process, and the adsorption capacity is stable after long-time use.
The invention provides the following technical scheme:
a ceramic vacuum chuck suitable for wafer adsorption, the ceramic vacuum chuck comprises a chuck base and porous ceramics arranged on the chuck base, and the porous ceramics is prepared by the following steps:
the method comprises the steps of taking internally sintered compact silicon carbide ceramic as a matrix, generating air holes on the silicon carbide ceramic by adopting a laser ablation method, cleaning the silicon carbide ceramic in hydrofluoric acid solution, taking out, ultrasonically cleaning in isopropanol, and washing with water;
the ultrasonic power is 20-100W, and the ultrasonic cleaning time is more than or equal to 30min.
The porous ceramic used by the ceramic vacuum chuck takes internally sintered compact silicon carbide ceramic as a matrix, and air holes are generated by laser ablation. The internally sintered compact silicon carbide ceramic refers to a non-microporous or porous ceramic matrix which is produced by no chemical reaction in the silicon carbide ceramic during sintering or is not added with an organic filler for pore formation. The silicon carbide ceramic has the characteristics of high structural strength, difficult deformation, stable shape and the like, and is more suitable for preparing the porous ceramic by laser ablation compared with the silicon nitride ceramic with low aluminum oxide hardness, high toughness and the like. Because the internal sintering is compact, after laser pore-forming, more structural weak points are not generated inside the ceramic, and particles are not easy to fall off. Meanwhile, the size, shape, spacing and porosity of the air holes can be accurately controlled by laser pore-forming, the air hole effectiveness is high and even can reach 100%, the difficulty in cleaning the traditional porous ceramic is overcome, and the pore canal is thoroughly cleaned. During cleaning, silicon dioxide, slag, burrs and the like which are converted by reaction of silicon carbide under laser ablation are firstly cleaned by hydrofluoric acid, then isopropanol is slowly cleaned under low ultrasonic power, the isopropanol has strong capability of dissolving lipophilic substances compared with other reagents such as ethanol, has more proper cleaning effect, is easy to volatilize, is not easy to adsorb air impurities, is not easy to excessively high in ultrasonic power, otherwise, is easy to damage part of connection points in holes, generates structural weak points, leads to falling of particles after long-time use, and reduces adsorption strength. Therefore, through the combination of a proper pore-forming method and a proper cleaning method, particles in ceramic pores are thoroughly cleaned, the particles are not easy to fall off, the probability of blocking is reduced, the pore canal is smooth, the ceramic adsorption force is strong, the higher vacuum degree can be achieved, the repeated use performance is high, the service life is long, and the positions of adsorption points can be customized according to the requirements. The porous ceramic is combined and sealed with a sucker base or a pedestal through a conventional assembly method, and then ground to meet the requirements of required flatness and the like, so that the ceramic vacuum sucker can be obtained, and can meet the requirements of high-end semiconductor manufacturing process.
As a preferred feature of the present invention,
the laser sintering power is 20-1000W and/or the laser processing speed is 1-10 ten thousand mm/s. Parameters of laser processing and the like are closely related to the size, shape, distribution mode and the like of the holes. Where allowed, the processing speed may reach the speed allowed by laser processing. The laser processing device used is a light collimation type laser processing device.
As a preferred feature of the present invention,
the power of the laser processing is 80-200W, and/or the speed of the laser processing is 20-1800 mm/s.
As a preferred feature of the present invention,
the mass concentration of the hydrofluoric acid solution is more than or equal to 5%, and the cleaning time of the hydrofluoric acid solution is more than or equal to 60min.
As a preferred feature of the present invention,
the mass concentration of the hydrofluoric acid solution is 5-35%, and/or the cleaning time of the hydrofluoric acid solution is 60-360 min.
As a preferred feature of the present invention,
the ultrasonic power is 20-75W, and/or the ultrasonic cleaning time is 30-150 min.
As a preferred feature of the present invention,
the pore diameter of the generated air hole is phi 0.1-1 mm;
and/or the pore spacing of the air holes is 0.1-1 mm. The pore diameter of the traditional microporous ceramic is generally tens of micrometers, and the pore gap is generally lower than 50 micrometers. The pore diameter and the pore gap of the porous ceramic provided by the application can be not less than 100 mu m, and higher adsorption force can be obtained under fewer pores.
As a preferred feature of the present invention,
the shape of the generated air holes is round, hexagonal, triangular or square.
As a preferred feature of the present invention,
the generated air holes are distributed in a rectangular array or a circular array.
The invention also provides a production method for reducing the scratch rate of the surface of the wafer, and the ceramic vacuum chuck is used for loading or transporting the wafer, so that the probability of dropping the particles in the porous ceramic is low and the scratch rate of the surface of the wafer is reduced because the particles in the porous ceramic are easy to clean and are not easy to generate new particles.
The beneficial effects of the invention are as follows:
the porous ceramic used by the ceramic vacuum chuck takes the compact sintered silicon carbide ceramic as a matrix, and can be prepared by laser ablation on the silicon nitride ceramic to generate air holes according to requirements and combining a proper cleaning method. The porous ceramic has controllable pore path, pore efficiency up to 100%, low cleaning difficulty, less structural weak points, high adsorption strength, high reuse stability and stable adsorption capacity, and reduces the probability of particulate matters and pore blocking. The shape, the size, the distribution form and the like of the air holes can be customized according to the needs, and the air hole has the advantage of high flexibility. The prepared porous ceramic is applied to a ceramic vacuum chuck, and can meet the production requirement of a high-end semiconductor manufacturing process.
Drawings
FIG. 1 is a view showing the shape of surface pores before cleaning the porous ceramic prepared in example 1.
FIG. 2 is a view showing the shape of the surface pores of the porous ceramic prepared in example 1 after washing.
Detailed Description
The following is a further description of embodiments of the invention.
Unless otherwise indicated, all starting materials used in the present invention are commercially available or are commonly used in the art, and unless otherwise indicated, the methods in the examples below are all conventional in the art.
The invention provides an embodiment of a ceramic vacuum chuck suitable for adsorbing a wafer, which comprises a chuck base and porous ceramic arranged on the chuck base, wherein the porous ceramic is prepared by the following steps:
the method comprises the steps of taking internally sintered compact silicon carbide ceramic as a matrix, generating air holes on the silicon carbide ceramic by adopting a laser ablation method, placing the silicon carbide ceramic into hydrofluoric acid solution for cleaning, wherein the cleaning time of hydrofluoric acid is mainly cleaning, generally the cleaning time is not less than 60 minutes, taking out, performing ultrasonic cleaning in isopropanol, and then washing with water; the ultrasonic power is 20-100W, and the ultrasonic cleaning time is not less than 30min.
The porous ceramic is bonded with a sucker base or a pedestal through a conventional assembly method such as glue, is combined and sealed, and is ground through such as LAP (LAP) to meet the requirements of required flatness and the like, so that the ceramic vacuum sucker is obtained.
In some embodiments provided herein, the laser sintering power is 20 to 1000W and/or the laser processing speed is 1 to 10 ten thousand mm/s. Preferably, the laser processing power is 80-200W and/or the laser processing speed is 20-1800 mm/s. More preferably, the laser processing speed is 20 to 120mm/s.
In some embodiments provided by the invention, the mass concentration of the hydrofluoric acid solution is more than or equal to 5%, and the cleaning time is not less than 60 minutes. More preferably, the mass concentration of the hydrofluoric acid solution is 5-35%, and the cleaning time is 60-360 min.
In some embodiments provided herein, the ultrasonic power is 20 to 75W and the ultrasonic treatment time is 30 to 150 minutes.
The pore diameter, the interval, the formation and the distribution mode of the pores of the porous ceramic can be designed according to the requirements. In some embodiments provided by the invention, the pore diameter of the generated air hole is phi 0.1-1 mm. In some embodiments provided by the invention, the pore spacing of the pores is 0.1-1 mm. In some embodiments provided herein, the pores generated are circular, hexagonal, triangular or square in shape. In some embodiments provided herein, the generated air holes are distributed in a rectangular array or an annular array.
The invention also provides an implementation scheme of the production method for reducing the scratch rate of the surface of the wafer, and the ceramic vacuum chuck is used for loading or transporting the wafer.
The technical solution of the present application is further illustrated by the following more specific examples. As mentioned above, parameters such as laser processing speed, power and the like should be set in consideration of factors such as pore diameter, pore gap, distribution form and the like of the pores, for example, the pore gap is smaller, and at this time, a lower processing speed should be adopted to facilitate control. Therefore, the parameters such as laser speed used in the embodiments described below are only set in the embodiments, and the values of the parameters such as laser speed are not limited thereto.
Example 1
A processing method of porous ceramics comprises the following specific processes:
(1) The method is characterized in that disc-shaped silicon carbide compact sintered ceramic (the purity of the silicon carbide is more than or equal to 99%) with the thickness of 0.5mm is taken as a matrix, a light collimation type laser processor is adopted to ablate on the surface of the matrix to generate air holes, the air holes are round holes, the aperture is 0.2mm, the hole spacing is 0.3mm and distributed in a circular ring array, the power of the laser processor is 100w, the processing speed is 20mm/s, and the shape view of the holes on the surface of the porous ceramic is shown in figure 1;
(2) And (3) placing the silicon carbide ceramic with the generated pores in hydrofluoric acid solution (with the mass concentration of 5%) for cleaning for 360min, taking out and drying, then cleaning for 30min in isopropanol with ultrasonic wave (with the power of 100W), taking out and drying, then washing with water, and then drying to obtain the silicon carbide porous ceramic, wherein the surface pore shape view of the obtained porous ceramic is shown in figure 2.
Example 2
A processing method of porous ceramics comprises the following specific processes:
(1) The method comprises the steps of taking disc-shaped silicon carbide compact sintered ceramic (the purity of silicon carbide is more than or equal to 99%) with the thickness of 0.5mm as a matrix, adopting a light collimation type laser processor to ablate on the surface of the matrix to generate air holes, wherein the air holes are round holes with the aperture of 0.2mm, the hole spacing of 1mm and distributed in a circular array, the power of the laser processor is 120w, and the processing speed is 120mm/s;
(2) And (3) placing the silicon carbide ceramic with the generated pores in hydrofluoric acid solution (the mass concentration is 15%) for cleaning for 180min, taking out and drying, then cleaning for 100min in isopropanol with ultrasonic waves (the power is 75 w), taking out and drying, then washing with water, and then drying to obtain the silicon carbide porous ceramic.
Example 3
A processing method of porous ceramics comprises the following specific processes:
(1) The method comprises the steps of taking disc-shaped silicon carbide compact sintered ceramic (the purity of silicon carbide is more than or equal to 99%) with the thickness of 0.5mm as a matrix, adopting a light collimation type laser processor to ablate on the surface of the matrix to generate air holes, wherein the air holes are round holes with the aperture of 0.5mm and the hole spacing of 1mm and distributed in a circular array, and the power of the laser processor is 80w and the processing speed is 1800mm/s;
(2) And (3) placing the silicon carbide ceramic with the generated pores in hydrofluoric acid solution (the mass concentration is 35%) for cleaning for 60min, taking out and drying, then cleaning for 150min in isopropanol with ultrasonic waves (the power is 20 w), taking out and drying, then washing with water, and then drying to obtain the silicon carbide porous ceramic.
Comparative example 1 (oxalic acid cleaning + isopropyl alcohol/ultrasonic cleaning + water rinsing)
The difference from example 1 is that oxalic acid solution with a concentration of 5% was used instead of hydrofluoric acid solution for cleaning.
Comparative example 2 (hydrofluoric acid cleaning + oxalic acid/ultrasonic cleaning + water rinsing)
The difference from example 1 is that oxalic acid solution with a concentration of 5% is used instead of isopropanol cleaning.
Comparative example 3 (hydrofluoric acid solution/ultrasonic cleaning + water rinse)
The difference from example 1 is that the isopropyl alcohol cleaning process was omitted and ultrasound was applied at the time of the hydrofluoric acid cleaning.
Comparative example 4 (shortening the time for cleaning with hydrofluoric acid solution)
The difference from example 1 is that the hydrofluoric acid solution cleaning time was 10min.
Comparative example 5 (hydrofluoric acid solution cleaning + ethanol/ultrasonic cleaning + water rinse)
The difference from example 1 is that ethanol is used instead of isopropanol for cleaning.
Comparative example 6 (isopropanol/ultrasonic cleaning power 1000W)
The difference from example 1 is that the ultrasonic power at the time of isopropyl alcohol/ultrasonic cleaning was 1000W and the cleaning time was 30min.
Comparative example 7 (isopropanol/ultrasonic cleaning + hydrofluoric acid solution cleaning + water rinsing)
The difference from example 1 is that isopropanol/ultrasonic cleaning is followed by hydrofluoric acid solution cleaning and then water rinsing.
Comparative example 8 (conventional microporous ceramic)
The microporous silicon carbide ceramic is prepared by adopting the prior method: the silicon carbide ceramic is prepared by mixing silicon carbide and carbon powder of an organic filler and sintering (the conventional sintering temperature is 1250 ℃ and the time is 150 hours), ultrasonic cleaning is carried out by oxalic acid solution, then the mixture is washed by water and dried, the porosity is 40%, and the overall dimension is the same as that of the porous ceramic prepared in the example 1.
The porous ceramics or microporous ceramics prepared in the embodiment and the comparative example are arranged on an alumina ceramic base, and are bonded by waterproof epoxy resin glue, after the glue is solidified, the porous ceramic surface is ground and leveled in a LAP mode, the porous ceramic surface and the base surface are coplanar and have the flatness below 0.002mm, the roughness Ra0.1 is below, different ceramic vacuum chucks are obtained, then vacuum suction holes on the alumina ceramic base are connected with a vacuum pump, a wafer is placed on the suction surface, the vacuum pump is turned on, and the vacuum degree is confirmed to be below-85 kPa, and the ceramic is judged to be qualified. The particulate matter in the microporous ceramic or porous ceramic was examined using an LPC tester, and the results are shown in Table 1 below.
TABLE 1 particulate matter Condition
| Particle size | Standard number/cm 2 | Example 1 | Example 2 | Example 3 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 | Comparative example 7 | Comparative example 8 |
| 5μm~1μm | 1000 | 6.6 | 56 | 139.5 | 923.3 | 1139.3 | 1552.3 | 2356.8 | 1278.1 | 89 | 690.2 | 767 |
| 1μm~0 | 100000 | 6438.3 | 13456 | 32875.4 | 749423.4 | 889452.1 | 1245312.5 | 3289453.2 | 936324.5 | 22342.2 | 823591 | 959461.4 |
As is evident from the comparison of the results of examples 1 to 3 and comparative example 8 in the above tables, the porous ceramics used in the present invention have significantly lower amounts of particulate matter in the pores than conventional microporous ceramics. Meanwhile, it can be seen from comparative examples 1 and comparative examples 1 to 7 that the cleaning method has an important effect on the removal of particulate matter in the pores after laser processing. The principle of laser ablation pore-forming is mainly that the high-temperature gasification material is adopted for processing, but the ceramic material cannot be gasified or converted in form due to high-temperature reaction, the high-temperature gasification material can become ceramic particles after being cooled, some ceramic particles can be adhered to the surface of a product, some ceramic particles are deposited at processing characteristic positions, particularly when large-format processing is performed, the processing time is long, the amount of the taken-out material is large, the deposition phenomenon is more serious, and therefore, the ceramic particles need to be cleaned in time. And unlike traditional microporous ceramic pore forming with organic filler, the porous ceramic particle of the present invention has organic impurity as the inside particle component, and thus the traditional microporous ceramic cleaning process may not be carried easily. As in comparative example 1, since silicon carbide of the present application is converted into a silicon dioxide impurity component by laser ablation, the cleaning effect of general organic and inorganic acids is poor, and cleaning with a hydrofluoric acid solution is required. As shown in comparative examples 2 to 7, isopropyl alcohol should be further used together with ultrasonic cleaning after hydrofluoric acid cleaning, oxalic acid can be neither used to replace isopropyl alcohol nor omitted, or the order of adjustment, etc., otherwise the cleaning effect cannot reach a satisfactory level, for example, the cleaning of isopropyl alcohol in comparative example 7 will lead to a large increase in the amount of small particles. The above cleaning method has been authenticated by the customer.
The ceramic vacuum chucks prepared in each example and comparative example were subjected to one hundred thousand endurance tests for adsorbing wafers, pressure changes (vacuum degree) before and after the test were detected, and the number of times the wafers were scratched was counted, and the results are shown in tables 2 and 3.
Table 2 durability test
| Pressure change after one hundred thousand times of cyclic use | Example 1 | Example 2 | Example 3 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 | Comparative example 7 | Comparative example 8 |
| Initial vacuum/kPa | -90 | -90 | -90 | -90 | -90 | -90 | -90 | -90 | -90 | -90 | -85 |
| Circulation vacuum degree/kPa | -90 | -90 | -90 | -85 | -85 | -85 | -90 | -90 | -85 | -90 | -60 |
As shown in examples 1 to 3 and comparative examples 1 to 7, the porous ceramics prepared by laser pore-forming are easier to obtain higher initial adsorption strength due to high pore-efficient compared with the conventional microporous ceramics. However, the porous ceramic obtained by the preparation method provided by the invention has more stable adsorption strength, and can still provide stable vacuum adsorption force after being repeatedly used for hundreds of thousands times. This is because the cleaning method of the porous ceramic affects the subsequent removal of particulate matter, the composition of the number ratio of large particulate matter to small particulate matter, and the regeneration. Further, as shown in comparative example 6, although the initial amount of particulate matter was relatively reduced by using the larger ultrasonic power washing, the initial amount of particulate matter was higher than that of example 1, on the one hand, and the adsorption strength after repeated use was lowered. The reason may be that the ultrasonic power is too high and the impact strength is too high, so that some structural weak points may be generated in the porous ceramic, and particles are generated to fall off in the cleaning and repeated use processes.
TABLE 3 number of wafer scratches
| One hundred thousand times of recycling | Example 1 | Example 2 | Example 3 | Comparative example 1 | Comparative example 2 | Comparative example 3 | Comparative example 4 | Comparative example 5 | Comparative example 6 | Comparative example 7 | Comparative example 4 |
| Number of scratches | 0 | 0 | 0 | 6 | 25 | 56 | 1907 | 39 | 30 | 34 | 5 |
As can be seen from the table, after the ceramic vacuum chuck provided by the invention is used for hundreds of thousands of times, the number of times of scratching the wafer is 0, and the scratching rate is lower than that of comparative examples 1-8. As can be seen from the analysis of Table 2, although the decrease in the suction vacuum strength was significant in comparative example 8, the number of wafer scratches was lower than in comparative examples 1 to 7. This is probably because, although the amount of particles was large compared to comparative example 1, the path of the air holes was not controllable in comparative example 8, and the detached particles were more likely to cause blocking of the air holes than falling on the wafer surface. Therefore, the ceramic vacuum chuck is not easy to fall off particles, so that the air holes are prevented from being blocked, and the wafer is prevented from being scratched.
Claims (9)
1. The ceramic vacuum chuck suitable for adsorbing the wafer is characterized by comprising a chuck base and porous ceramics arranged on the chuck base, wherein the porous ceramics are prepared by the following steps:
the method comprises the steps of taking internally sintered compact silicon carbide ceramic as a matrix, generating air holes on the silicon carbide ceramic by adopting a laser ablation method, cleaning the silicon carbide ceramic in hydrofluoric acid solution, taking out, ultrasonically cleaning in isopropanol, and washing with water; the mass concentration of the hydrofluoric acid solution is more than or equal to 5%, and the cleaning time of the hydrofluoric acid solution is more than or equal to 60min;
the ultrasonic power is 20-100W, and the ultrasonic cleaning time is more than or equal to 30min.
2. A ceramic vacuum chuck according to claim 1, wherein,
the laser sintering power is 20-1000W, and/or the laser processing speed is 1-10 ten thousand mm/s.
3. A ceramic vacuum chuck according to claim 2, wherein,
the power of laser processing is 80-200W, and/or the speed of laser processing is 20-1800 mm/s.
4. A ceramic vacuum chuck according to claim 1, wherein,
the mass concentration of the hydrofluoric acid solution is 5-35%, and/or the cleaning time of the hydrofluoric acid solution is 60-360 min.
5. A ceramic vacuum chuck according to claim 1, wherein,
the ultrasonic power is 20-75W, and/or the ultrasonic time is 30-150 min.
6. A ceramic vacuum chuck according to claim 1, wherein,
the pore diameter of the generated air hole is phi 0.1-1 mm;
and/or the hole spacing of the air holes is 0.1-1 mm.
7. A ceramic vacuum chuck according to claim 1 or 6, characterized in that,
the shape of the generated air holes is round, hexagonal, triangular or square.
8. A ceramic vacuum chuck according to claim 1 or 6, characterized in that,
the generated air holes are distributed in a rectangular array or a circular array.
9. A production method for reducing the scratch rate of the surface of a wafer, characterized in that the ceramic vacuum chuck according to any one of claims 1 to 8 is used for loading or transporting the wafer.
Priority Applications (1)
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| CN202310527859.7A CN116798929B (en) | 2023-05-11 | 2023-05-11 | Ceramic vacuum chuck suitable for adsorbing wafer and production method for reducing surface scratch rate of wafer |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1942229A (en) * | 2005-03-31 | 2007-04-04 | 揖斐电株式会社 | Honeycomb structure body |
| CN101851709A (en) * | 2009-12-15 | 2010-10-06 | 江苏大学 | Preparation method and device for nano porous metal or ceramic |
| CN114751751A (en) * | 2022-04-18 | 2022-07-15 | 南通三责精密陶瓷有限公司 | Manufacturing method of semiconductor high-temperature water-cooling high-precision ceramic sucker and ceramic sucker |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7790616B2 (en) * | 2007-08-29 | 2010-09-07 | Northrop Grumman Systems Corporation | Encapsulated silicidation for improved SiC processing and device yield |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1942229A (en) * | 2005-03-31 | 2007-04-04 | 揖斐电株式会社 | Honeycomb structure body |
| CN101851709A (en) * | 2009-12-15 | 2010-10-06 | 江苏大学 | Preparation method and device for nano porous metal or ceramic |
| CN114751751A (en) * | 2022-04-18 | 2022-07-15 | 南通三责精密陶瓷有限公司 | Manufacturing method of semiconductor high-temperature water-cooling high-precision ceramic sucker and ceramic sucker |
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| CN116798929A (en) | 2023-09-22 |
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