CN116755502A - Source follower driving circuit, electronic circuit and electronic equipment - Google Patents
Source follower driving circuit, electronic circuit and electronic equipment Download PDFInfo
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- CN116755502A CN116755502A CN202311034360.9A CN202311034360A CN116755502A CN 116755502 A CN116755502 A CN 116755502A CN 202311034360 A CN202311034360 A CN 202311034360A CN 116755502 A CN116755502 A CN 116755502A
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- 230000003139 buffering effect Effects 0.000 description 1
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Abstract
The application provides a source follower driving circuit, an electronic circuit and an electronic device. The source follower driving circuit comprises a source follower, a driving voltage generating module and an impedance matching module. The driving voltage generation module is respectively connected with the input end and the driving end of the source follower, and is provided with a plurality of stages of depletion type N-channel first field effect transistors and is used for generating driving voltages according to threshold voltages of the plurality of stages of first field effect transistors so as to drive the source follower through the driving voltages. The impedance matching module is electrically connected with the driving voltage generating module and is used for providing impedance for the driving voltage generating module. The application utilizes threshold voltages of a plurality of stages of first field effect transistors to generate a driving voltage for driving a source follower. Compared with the technical scheme adopting the zener diode in the prior art, the power consumption current of the driving circuit of the embodiment is not affected by the input voltage, so that the power consumption of the driving circuit is kept stable.
Description
Technical Field
The present application relates to the field of integrated circuits, and in particular, to a source follower driving circuit, an electronic circuit, and an electronic device.
Background
A source follower (SourceFollower) is a basic field effect transistor circuit, also called a voltage follower. The high-voltage power amplifier can realize the characteristics of high input resistance and low output resistance, and is suitable for signal amplification, buffering, driving and other applications.
Referring to fig. 1, the source follower mainly comprises a field effect transistor and several fixed resistors, an input terminal for receiving an input voltage Vin, and an output terminal for transmitting an output voltage Vout. The prior art driving circuit of the source follower includes a resistor R1 and a zener diode ZD1, the driving end voltage of the source follower is clamped at a fixed value Vzd by the zener diode ZD1, the transistor gate N1 of the source follower is determined by the breakdown voltage of the zener diode, however, since the zener diode itself has a tube current, the current flowing through the zener diode is I1, and as shown in the formula i1= (Vin-Vzd)/R1, the power consumption current generated by the driving circuit is affected by the input voltage Vin.
Disclosure of Invention
The application provides a source follower driving circuit, an electronic circuit and an electronic device, which are used for solving the problem that the power consumption current generated by the driving circuit in the prior art is influenced by input voltage.
In order to solve the technical problems, the application adopts the following technical scheme:
a source follower drive circuit comprising:
the source electrode follower is provided with an input end, an output end and a driving end;
the driving voltage generation module is respectively connected with the input end and the driving end of the source follower, and is provided with a plurality of stages of first field effect transistors of depletion type N channels and used for generating driving voltages according to threshold voltages of the plurality of stages of first field effect transistors so as to drive the source follower through the driving voltages;
and the impedance matching module is electrically connected with the driving voltage generation module and is used for providing impedance for the driving voltage generation module so as to regulate the power consumption current of the driving voltage generation module.
Further, in the first field effect transistors of the plurality of stages, the drain electrode of the first field effect transistor of the current stage is connected with the source electrode of the first field effect transistor of the next stage, the source electrode of the first field effect transistor of the current stage is respectively connected with the drain electrode of the first field effect transistor of the previous stage and the grid electrode of the first field effect transistor of the next stage, and the grid electrode of the first field effect transistor of the current stage is connected with the source electrode of the field effect transistor of the previous stage;
the source electrode of the first field effect transistor of the first stage is connected with the impedance matching module, and the grid electrode of the first field effect transistor of the first stage is grounded;
the drain electrode of the first field effect transistor of the final stage is connected with the input end of the source follower; and the source electrode of the first field effect transistor of the final stage is connected with the driving end of the source follower.
Further, the impedance matching module comprises a reverse diode, wherein the negative electrode of the reverse diode is connected with the source electrode of the first field effect transistor of the first stage, and the positive electrode of the reverse diode is grounded.
Further, the impedance matching module comprises a second field effect tube, wherein the drain electrode of the second field effect tube is connected with the source electrode of the first field effect tube at the first stage, the source electrode of the second field effect tube is grounded, and the grid electrode of the second field effect tube is connected with the source electrode of the second field effect tube.
Further, the impedance matching module comprises a current source, wherein the anode of the current source is connected with the source electrode of the first field effect tube of the first stage, and the cathode of the current source is grounded.
Further, the current source is a third field effect transistor of a depletion type N channel, a drain electrode of the third field effect transistor is connected with a source electrode of the first field effect transistor of the first stage, a source electrode of the third field effect transistor is grounded, and a grid electrode of the third field effect transistor is connected with a source electrode of the third field effect transistor.
Further, the source follower includes an N-channel source follower transistor, a drain of the source follower transistor is connected to the input terminal, a source of the source follower transistor is connected to the output terminal, and a gate of the source follower transistor is connected to the drive terminal.
An electronic circuit comprising a source follower drive circuit as claimed in any one of the preceding claims.
An electronic device comprising an electronic circuit as described above.
The application has the beneficial effects that: according to the source follower driving circuit, the driving voltage generating module is provided with the plurality of stages of depletion type N-channel first field effect transistors, and the threshold voltages of the plurality of stages of first field effect transistors are utilized to generate the driving voltage for driving the source follower. For example, the threshold voltages of the first field effect transistors of a plurality of stages are superimposed to generate a fixed driving voltage. Therefore, the power consumption of the driving circuit cannot change along with the change of the input signal, and correspondingly, the impedance matching module provides impedance for the driving voltage generating module, so that the source follower driving circuit is beneficial to keeping no power consumption or low power consumption.
Drawings
FIG. 1 is a schematic diagram of a prior art source follower drive circuit;
fig. 2 is a schematic block diagram of a source follower driving circuit of the present embodiment;
fig. 3 is a first schematic diagram of the source follower driving circuit of the present embodiment;
fig. 4 is a second schematic diagram of the source follower driving circuit of the present embodiment;
fig. 5 is a third principle diagram of the source follower driving circuit of the present embodiment;
fig. 6 is a fourth schematic diagram of the source follower driving circuit of the present embodiment;
fig. 7 is a fifth principle diagram of the source follower driving circuit of the present embodiment;
fig. 8 is a sixth schematic diagram of the source follower driving circuit of the present embodiment;
fig. 9 is a schematic block diagram of a low dropout linear voltage regulator circuit according to the second embodiment.
The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, units, modules, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, units, modules, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. The term "and/or" as used herein includes all or any element and all combination of one or more of the associated listed items.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
Example 1
The present embodiment provides a source follower driving circuit for driving a source follower 100, and the source follower 100 in the present embodiment may be used as a buffer or applied to a low dropout linear voltage regulator circuit or the like, for example.
Referring to fig. 2, the source follower driving circuit of the present embodiment includes a source follower 100, a driving voltage generating module 200 and an impedance matching module 300. The source follower 100 is provided with an input terminal, an output terminal, and a driving terminal. The driving voltage generating module 200 is respectively connected with the input end and the driving end of the source follower 100, and the driving voltage generating module 200 is provided with a plurality of stages of depletion type N-channel first field effect transistors, and is configured to generate a driving voltage according to threshold voltages of the plurality of stages of first field effect transistors, so as to drive the source follower 100 through the driving voltage. The impedance matching module 300 is electrically connected to the driving voltage generating module 200, and is configured to provide impedance to the driving voltage generating module 200 to regulate the power consumption current of the driving voltage generating module 200.
The working principle of the source follower driving circuit of this embodiment is as follows: the driving voltage generating module 200 is provided with a plurality of stages of depletion type N-channel first field effect transistors, and obtains a driving voltage by using threshold voltages of the plurality of stages of first field effect transistors. Illustratively, the overlapping of several stages of threshold voltages of the first field effect transistor is utilized until a voltage is obtained that satisfies the transistor gate pushing the source follower 100. Further, the impedance matching module 300 provides the driving voltage generating module 200 with a corresponding impedance, thereby adjusting the power consumption current of the driving voltage generating module 200.
It can be understood that, since the driving voltage generating module 200 of the present embodiment generates the driving voltage through the threshold voltages of the field effect transistors of the several-stage depletion type N-channel, compared with the technical scheme of using the zener diode in the prior art, the power consumption current of the driving circuit of the present embodiment will not be affected by the input voltage, so as to stabilize the power consumption of the driving circuit. Meanwhile, the impedance matching module 300 may use a high-impedance device, so that the power consumption current of the driving voltage generating module 200 may be further reduced, and even when the impedance of the device is infinite, the driving voltage generating module 200 may be close to no power consumption.
Referring to fig. 3, in some embodiments, the internal circuit structure of the driving voltage generating module 200 is as follows: among the first field effect transistors (DN 1, DN2 … DNN-1, DNN), the drain electrode of the first field effect transistor of the current stage is connected with the source electrode of the first field effect transistor of the next stage, the source electrode of the first field effect transistor of the current stage is respectively connected with the drain electrode of the first field effect transistor of the previous stage and the grid electrode of the first field effect transistor of the next stage, and the grid electrode of the first field effect transistor of the current stage is connected with the source electrode of the field effect transistor of the previous stage. The source electrode of the first fet DN1 at the first stage is connected to the impedance matching module 300, and the gate electrode of the first fet DN1 at the first stage is grounded. The drain electrode of the first field effect transistor DNN of the final stage is connected with the input end of the source follower 100; and a source electrode of the first field effect transistor DNN of the final stage is connected with the driving end of the source follower 100.
It can be appreciated that the node voltage of the first fet of stage 1 is determined by the threshold voltage of the first fet and the impedance of the impedance matching module 300, and its own morphology. Taking the example that N-stage (N is greater than or equal to 1) first field effect transistors are provided, the source voltage of each stage of first field effect transistor DN1 is set as a node voltage, and assuming that the threshold voltage of each stage of first field effect transistor is-xV, the impedance matching module 300 provides high impedance for the first field effect transistor link, the node voltage (A1) of the 1 st stage of first field effect transistor is xV, the node voltage (A2) of the 2 nd stage of first field effect transistor DN2 is 2 x xV, the node voltage of the 3 rd stage of first field effect transistor is 3 x xV, and so on, the node voltage of the N-1 th stage of field effect transistor DNN-1 is (N-1) x v, and the node voltage of the N-th stage of field effect transistor DNN is N x v.
Referring to fig. 4, for example, the present embodiment adopts a connection structure of 4-stage first field effect transistors (DN 1, DN2, DN3, DN 4), the threshold voltage of the first field effect transistor used is-0.5V, the node voltage (A1) of the 1 st-stage first field effect transistor DN1 is 0.5V, the node voltage (A2) of the 2 nd-stage first field effect transistor DN2 is 1V, the node voltage (A3) of the 3 rd-stage first field effect transistor DN3 is 1.5V, the node voltage of the 4 th-stage first field effect transistor is 2V, and the node voltage (A4) of the 4 th-stage first field effect transistor DN4 is used to push the gate of the transistor of the source follower 100.
Alternatively, the impedance matching module 300 of the present embodiment may use a high-impedance device to provide a high impedance for the driving circuit, so as to reduce the power consumption of the driving circuit, and if the impedance provided by the high-impedance device is infinite, the driving circuit can generate no power consumption.
Referring to fig. 5, in some embodiments, the impedance matching module 300 includes a reverse diode D1, a cathode of the reverse diode D1 is connected to a source of the first fet DN1 of the first stage, and an anode of the reverse diode D1 is grounded.
It can be appreciated that the reverse diode D1 is adopted in the embodiment to provide a larger impedance for the link of the first diode, so that the design is ingenious, the power consumption of the driving circuit can be reduced, the driving circuit structure is simplified, and the components and parts required by the driving circuit are reduced, thereby reducing the cost of the driving circuit.
Referring to fig. 6, in some embodiments, the impedance matching module 300 includes a second fet N2, a drain of the second fet N2 is connected to a source of the first fet DN1 at the first stage, a source of the second fet N2 is grounded, and a gate of the second fet N2 is connected to a source thereof. The second field effect transistor N2 is an N-channel field effect transistor.
It can be understood that the second field effect transistor N2 with an N channel is adopted in this embodiment, and the gate electrode of the second field effect transistor N2 is connected with the source electrode, which can be equivalently a reverse diode, so as to provide high impedance for the first field effect transistor link, so that the design is ingenious, meanwhile, the structure of the driving circuit is simplified, and the components required by the driving circuit are reduced, thereby reducing the cost of the driving circuit.
Referring to fig. 7, alternatively, the impedance matching module 300 may also be a non-high impedance device, and in some embodiments, the impedance matching module 300 includes a current source 310, an anode of the current source 310 is connected to a source of the first fet DN1 at the first stage, and a cathode of the current source 310 is grounded.
It can be appreciated that when the current source 310 is used in the impedance matching module 300, assuming that the threshold voltage of the first fet is-0.5V, the node voltage of the first fet at level 1 is less than 0.5V, taking the node voltage of the first fet at level 1 as an example, the node voltage of the first fet at level 2 is 0.8V, the node voltage of the first fet at level 3 is 1.2V, and the node voltage of the first fet at level 4 is 1.6V, so as to push the gate of the transistor in the source follower 100 until the node voltage of the first fet at level N is obtained, where the power consumption current of the driving circuit itself does not change with the input voltage.
Referring to fig. 8, the current source 310 is an depletion type N-channel third fet N3, the drain of the third fet N3 and the source of the first fet at the first stage, the source of the third fet N3 is grounded, and the gate of the third fet N3 is connected to the source thereof.
It can be appreciated that the depletion type N-channel field effect transistor is adopted as the current source 310 in this embodiment, so that the design is ingenious, the driving circuit structure is simplified, and the components required by the driving circuit are reduced, thereby reducing the cost of the driving circuit. In other embodiments, the specific circuit structure of the current source 310 may be set according to actual requirements, which is not limited herein.
With continued reference to fig. 3, in some embodiments, the source follower 100 includes an N-channel source follower transistor N1, a drain of the source follower transistor N1 is connected to the input terminal, a source of the source follower transistor N1 is connected to the output terminal, and a gate of the source follower transistor N1 is connected to the driving terminal.
It can be understood that, in the present embodiment, the gate of the source follower transistor N1 is connected to the source of the nth stage first field effect transistor DNN through the driving end, and the node voltage of the nth stage first field effect transistor DNN pushes the gate of the source follower transistor N1, so that the source of the source follower transistor N1 forms a source follower output. In other embodiments, the specific circuit structure of the source follower 100 may be set according to actual requirements, which is not limited herein.
Example two
The present embodiment provides an electronic circuit including the source follower driving circuit according to the first embodiment.
Referring to fig. 9, the electronic circuit is an input low dropout linear regulator for a high voltage source, the low dropout linear regulator further includes an error amplifier 400 and an output stage power tube circuit 500, the output end of the source follower 100 provides the input power of the error amplifier 400 to replace the power source which needs to be directly connected to the high voltage, and the low dropout linear regulator has better regulation effect because the power source of the error amplifier is the source follower 100.
The low dropout linear voltage stabilizing circuit of the embodiment adopts the source electrode following circuit and the driving circuit thereof, and the power consumption current of the driving circuit does not change along with the voltage of the input end of the source electrode follower, thereby being beneficial to reducing the power consumption and the cost of the whole low dropout linear voltage stabilizing circuit.
In other embodiments, the electronic circuit may also be a feedback circuit, a driving circuit, a power supply circuit, or the like.
Example III
The present embodiment provides an electronic device including the electronic circuit described in the second embodiment.
The electronic device in this embodiment may be a power supply device, a display device, a sensor, or the like.
In summary, according to the source follower driving circuit, the electronic circuit and the electronic device provided by the application, the driving voltage generating module is provided with the plurality of stages of depletion type N-channel first field effect transistors, and the threshold voltages of the plurality of stages of first field effect transistors are utilized to generate the driving voltage for driving the source follower. For example, the threshold voltages of the first field effect transistors of a plurality of stages are superimposed to generate a fixed driving voltage. Therefore, the power consumption of the driving circuit cannot change along with the change of the input signal, and correspondingly, the application provides the impedance matching module for providing impedance for the driving voltage generation module so as to regulate the power consumption current flowing through the driving voltage module, thereby being beneficial to keeping the power consumption of the source follower driving circuit zero or low.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the scope of the application, and all equivalent structures or equivalent processes using the descriptions and drawings of the present application or directly or indirectly applied to other related technical fields are included in the scope of the application.
Claims (9)
1. A source follower driving circuit, comprising:
the source electrode follower is provided with an input end, an output end and a driving end;
the driving voltage generation module is respectively connected with the input end and the driving end of the source follower, and is provided with a plurality of stages of first field effect transistors of depletion type N channels and used for generating driving voltages according to threshold voltages of the plurality of stages of first field effect transistors so as to drive the source follower through the driving voltages;
and the impedance matching module is electrically connected with the driving voltage generation module and is used for providing impedance for the driving voltage generation module so as to regulate the power consumption current of the driving voltage generation module.
2. The source follower driving circuit of claim 1, wherein, among the plurality of stages of the first field effect transistors, a drain electrode of the first field effect transistor of a current stage is connected to a source electrode of the first field effect transistor of a next stage, a source electrode of the first field effect transistor of the current stage is respectively connected to a drain electrode of the first field effect transistor of a previous stage and a gate electrode of the first field effect transistor of the next stage, and a gate electrode of the first field effect transistor of the current stage is connected to a source electrode of the field effect transistor of the previous stage;
the source electrode of the first field effect transistor of the first stage is connected with the impedance matching module, and the grid electrode of the first field effect transistor of the first stage is grounded;
the drain electrode of the first field effect transistor of the final stage is connected with the input end of the source follower; and the source electrode of the first field effect transistor of the final stage is connected with the driving end of the source follower.
3. The source follower driving circuit of claim 2, wherein the impedance matching module comprises a reverse diode having a negative pole connected to the source of the first fet of the first stage and a positive pole connected to ground.
4. The source follower driver circuit of claim 2, wherein the impedance matching module comprises a second fet, a drain of the second fet is connected to a source of the first fet at a first stage, a source of the second fet is grounded, and a gate of the second fet is connected to a source of the second fet.
5. The source follower driver circuit of claim 2, wherein the impedance matching module comprises a current source having an anode connected to the source of the first fet of the first stage and a cathode connected to ground.
6. The source follower driver circuit of claim 5, wherein the current source is a depletion N-channel third fet, a drain of the third fet is connected to a source of the first fet at a first level, a source of the third fet is grounded, and a gate of the third fet is connected to a source of the third fet.
7. The source follower drive circuit of claim 1, wherein the source follower comprises an N-channel source follower transistor, a drain of the source follower transistor is connected to the input terminal, a source of the source follower transistor is connected to the output terminal, and a gate of the source follower transistor is connected to the drive terminal.
8. An electronic circuit comprising a source follower drive circuit according to any one of claims 1-7.
9. An electronic device comprising the electronic circuit of claim 8.
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| CN202311034360.9A CN116755502B (en) | 2023-08-17 | 2023-08-17 | Source follower driving circuit, electronic circuit and electronic equipment |
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| CN202311034360.9A CN116755502B (en) | 2023-08-17 | 2023-08-17 | Source follower driving circuit, electronic circuit and electronic equipment |
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