CN116732519A - Microetching accelerator - Google Patents
Microetching accelerator Download PDFInfo
- Publication number
- CN116732519A CN116732519A CN202310709001.2A CN202310709001A CN116732519A CN 116732519 A CN116732519 A CN 116732519A CN 202310709001 A CN202310709001 A CN 202310709001A CN 116732519 A CN116732519 A CN 116732519A
- Authority
- CN
- China
- Prior art keywords
- microetching
- accelerator
- circuit board
- etching
- printed circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims description 16
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 16
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 16
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 13
- -1 oxydivinyl benzothiazole Chemical compound 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- KEZYHIPQRGTUDU-UHFFFAOYSA-N 2-[dithiocarboxy(methyl)amino]acetic acid Chemical compound SC(=S)N(C)CC(O)=O KEZYHIPQRGTUDU-UHFFFAOYSA-N 0.000 claims description 8
- JFISFZKKYWLPPP-UHFFFAOYSA-N 4-sulfanyl-3h-1,3-benzothiazole-2-thione Chemical compound C1=CC=C2SC(S)=NC2=C1S JFISFZKKYWLPPP-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000002738 chelating agent Substances 0.000 claims description 7
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 claims description 7
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 claims description 7
- 235000011006 sodium potassium tartrate Nutrition 0.000 claims description 7
- DUIOKRXOKLLURE-UHFFFAOYSA-N 2-octylphenol Chemical compound CCCCCCCCC1=CC=CC=C1O DUIOKRXOKLLURE-UHFFFAOYSA-N 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 6
- 239000002736 nonionic surfactant Substances 0.000 claims description 6
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 6
- LXAHHHIGZXPRKQ-UHFFFAOYSA-N 5-fluoro-2-methylpyridine Chemical compound CC1=CC=C(F)C=N1 LXAHHHIGZXPRKQ-UHFFFAOYSA-N 0.000 claims description 5
- 229940074439 potassium sodium tartrate Drugs 0.000 claims description 5
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 claims description 3
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 claims description 3
- ONJQDTZCDSESIW-UHFFFAOYSA-N polidocanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO ONJQDTZCDSESIW-UHFFFAOYSA-N 0.000 claims description 3
- SOBHUZYZLFQYFK-UHFFFAOYSA-K trisodium;hydroxy-[[phosphonatomethyl(phosphonomethyl)amino]methyl]phosphinate Chemical compound [Na+].[Na+].[Na+].OP(O)(=O)CN(CP(O)([O-])=O)CP([O-])([O-])=O SOBHUZYZLFQYFK-UHFFFAOYSA-K 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 abstract description 8
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 abstract description 8
- 238000003486 chemical etching Methods 0.000 abstract description 7
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 230000002829 reductive effect Effects 0.000 abstract description 6
- 239000000126 substance Substances 0.000 abstract description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 abstract description 3
- 239000005751 Copper oxide Substances 0.000 abstract description 3
- 239000002894 chemical waste Substances 0.000 abstract description 3
- 229910000431 copper oxide Inorganic materials 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000003795 chemical substances by application Substances 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- MUKYLHIZBOASDM-UHFFFAOYSA-N 2-[carbamimidoyl(methyl)amino]acetic acid 2,3,4,5,6-pentahydroxyhexanoic acid Chemical compound NC(=N)N(C)CC(O)=O.OCC(O)C(O)C(O)C(O)C(O)=O MUKYLHIZBOASDM-UHFFFAOYSA-N 0.000 description 3
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 description 3
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 description 3
- 241000159213 Zygophyllaceae Species 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 235000009165 saligot Nutrition 0.000 description 3
- DZCAZXAJPZCSCU-UHFFFAOYSA-K sodium nitrilotriacetate Chemical compound [Na+].[Na+].[Na+].[O-]C(=O)CN(CC([O-])=O)CC([O-])=O DZCAZXAJPZCSCU-UHFFFAOYSA-K 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 2
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 2
- 239000001476 sodium potassium tartrate Substances 0.000 description 2
- 239000011550 stock solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241001164374 Calyx Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention relates to the field of printed circuit board processing, in particular to a microetching accelerator which can ensure that the microetching rate is between 0.5 and 1.5um/min and simultaneously reduce the consumption of sodium persulfate by 40 to 60 percent; in addition, the microetching accelerator can accelerate the chemical etching process of the printed circuit board, thereby improving the manufacturing efficiency and reducing the manufacturing cost; in addition, the microetching accelerator is a chemical solution generally based on copper oxide, and can greatly reduce the etching time of the surface of the printed circuit board by accelerating the chemical etching rate of the printed circuit board, thereby improving the production efficiency. In addition, the generation of chemical waste liquid can be reduced, so that the environmental pollution is reduced; the microetching accelerator can also control the etching rate of the surface of the printed circuit board, thereby improving the etching precision, ensuring the etching uniformity, improving the etching quality, reducing the defects of the surface of the circuit board and prolonging the service life of the circuit board.
Description
Technical Field
The invention relates to the field of printed circuit board processing, in particular to a microetching accelerator.
Background
Sodium persulfate is a chemical that can accelerate the chemical etching process of printed wiring boards. The microetching process for manufacturing the printed circuit board can greatly improve the manufacturing efficiency and reduce the manufacturing cost.
Sodium persulfate is one of the most widely used chemicals in the manufacture of printed wiring boards, and its selling price directly affects the cost and profits of printed wiring board production. If the price of sodium persulfate increases, it directly results in an increase in the manufacturing cost of the printed wiring board. This is particularly the case in some times when the market price of sodium persulfate is limited by factors such as changes in raw material and labor costs, changes in market supply and demand relationships, and the like.
Since the production subject is under pressure to reduce the cost and improve the efficiency, it is generally difficult to completely transfer the increase in raw material price, and thus the increase in raw material price directly leads to an increase in manufacturing cost.
Disclosure of Invention
In order to solve the problems, the invention provides a microetching accelerator which can stabilize the microetching rate and reduce the consumption of sodium persulfate.
In order to achieve the above purpose, the invention adopts the following technical scheme: a microetching accelerator, characterized by: comprises, by weight, 0.5-1% of promoter, 1-10% of nonionic surfactant, 0.2-0.8% of catalyst, 1-5% of chelating agent, 2-5% of builder, and the balance of water.
Further, the accelerator is one or a mixture of dimercapto benzothiazole and oxydivinyl benzothiazole.
Further, the nonionic surfactant is one or a mixture of more of octyl phenol polyoxyethylene ether NP-9, nonyl phenol polyoxyethylene ether AEO-9, isomeric alcohol polyoxyethylene ether 1005 and the like.
Further, the catalyst is one or a mixture of a plurality of thiazole soldiers, thiazole nails and the like.
Further, the chelating agent is one or a mixture of more of disodium EDTA, trisodium NTA, sodium potassium tartrate and the like.
Further, the builder is one or a mixture of more of sodium metasilicate pentahydrate, sodium tripolyphosphate and the like.
The invention has the beneficial effects that:
1. the microetching accelerator can ensure that the microetching rate is between 0.5 and 1.5um/min, and simultaneously reduce the consumption of sodium persulfate by 40 to 60 percent; in addition, the microetching accelerator can accelerate the chemical etching process of the printed circuit board, thereby improving the manufacturing efficiency and reducing the manufacturing cost.
2. In addition, the microetching accelerator is a chemical solution generally based on copper oxide, and can greatly reduce the etching time of the surface of the printed circuit board by accelerating the chemical etching rate of the printed circuit board, thereby improving the production efficiency. In addition, the generation of chemical waste liquid can be reduced, so that the environmental pollution is reduced.
3. The microetching accelerator can also control the etching rate of the surface of the printed circuit board, thereby improving the etching precision, ensuring the etching uniformity, improving the etching quality, reducing the defects of the surface of the circuit board and prolonging the service life of the circuit board.
Detailed Description
A microetching accelerator, characterized by: comprises, by weight, 0.5-1% of promoter, 1-10% of nonionic surfactant, 0.2-0.8% of catalyst, 1-5% of chelating agent, 2-5% of builder, and the balance of water.
Further, the accelerator is one or a mixture of dimercapto benzothiazole and oxydivinyl benzothiazole.
Further, the nonionic surfactant is one or a mixture of more of octyl phenol polyoxyethylene ether NP-9, nonyl phenol polyoxyethylene ether AEO-9, isomeric alcohol polyoxyethylene ether 1005 and the like.
Further, the catalyst is one or a mixture of a plurality of thiazole soldiers, thiazole nails and the like.
Further, the chelating agent is one or a mixture of more of disodium EDTA, trisodium NTA, sodium potassium tartrate and the like.
Further, the builder is one or a mixture of more of sodium metasilicate pentahydrate, sodium tripolyphosphate and the like.
The microetching accelerator can ensure that the microetching rate is between 0.5 and 1.5um/min, and simultaneously reduce the consumption of sodium persulfate by 40 to 60 percent; in addition, the microetching accelerator can accelerate the chemical etching process of the printed circuit board, thereby improving the manufacturing efficiency and reducing the manufacturing cost.
In addition, the microetching accelerator is a chemical solution generally based on copper oxide, and can greatly reduce the etching time of the surface of the printed circuit board by accelerating the chemical etching rate of the printed circuit board, thereby improving the production efficiency. In addition, the generation of chemical waste liquid can be reduced, so that the environmental pollution is reduced.
The microetching accelerator can also control the etching rate of the surface of the printed circuit board, thereby improving the etching precision, ensuring the etching uniformity, improving the etching quality, reducing the defects of the surface of the circuit board and prolonging the service life of the circuit board.
In the case of the embodiment of the present invention in which the sample is a solid,
the components comprise the following components: 0.3% of dimercaptobenzothiazole, 0.2% of oxydivinyl benzothiazole, 0.5% of octyl phenol polyoxyethylene NP-9, 0.5% of isomeric alcohol polyoxyethylene ether 1005, 0.2% of thiazole caltrop, 1% of potassium sodium tartrate, 2% of sodium metasilicate pentahydrate and 95.3% of deionized water to prepare 500L stock solution.
The configuration mode is as follows:
1. adding 250L of deionized water into the container;
2. adding dimercaptobenzothiazole, oxydivinyl benzothiazole, octylphenol polyoxyethylene ether NP-9, isomeric alcohol polyoxyethylene ether 1005, thiazole caltrop, EDTA disodium, sodium metasilicate pentahydrate and sodium tripolyphosphate into the mixture according to the proportion; a step of
3. The remaining deionized water was added and stirred and dissolved completely.
In example 2:
1. the component content is as follows: 0.6% of dimercaptobenzothiazole, 0.4% of oxydivinyl benzothiazole, 5% of octyl phenol polyoxyethylene ether NP-9, 5% of isomeric alcohol polyoxyethylene ether 1005, 0.8% of thiazole calyx, 5% of EDTA disodium, 5% of sodium tripolyphosphate and 78.2% of deionized water to prepare 500L stock solution.
The configuration mode is as follows:
1. adding 250L of deionized water into the container;
2. adding dimercaptobenzothiazole, oxydivinyl benzothiazole, octyl phenol polyoxyethylene ether NP-9, isomeric alcohol polyoxyethylene ether 1005, thiazole caltrop, EDTA disodium, sodium metasilicate pentahydrate and sodium tripolyphosphate into the mixture according to the proportion.
3. The remaining deionized water was added and stirred and dissolved completely.
The results of the comparison of example 1 and example 2 are referred to in the following table:
| example 1 | Example 2 | |
| Etching rate | 17μm/h | 20μm/h |
| Depth of etching | 10μm | 14μm |
| PH value | 2.5 | 4 |
From the test results, it can be seen that the comparison of the two embodiments shows that the effect of the embodiment 1 is more excellent, the slow etching rate is mainly that sodium metasilicate pentahydrate is added, and the addition of sodium metasilicate pentahydrate can form a protective film of silicon oxide to prevent the microetching agent from corroding the metal matrix, so that the etching rate and the etching depth of the microetching agent to the sample are slowed down. The method can also reduce the pH value in the microetching agent, stabilize metal ions and prolong the experimental time so as to obtain more accurate test results.
And the potassium sodium tartrate can form a complex with metal cations (such as copper ions, iron ions and the like) so as to ensure that the potassium sodium tartrate is not easily corroded by microetching agents. In the microetching accelerator, the potassium sodium tartrate can be used as a corrosion inhibitor, and simultaneously, the speed and the depth of microetching reaction can be controlled.
In addition, the following description is made regarding the selection of each component of the chelating agent:
disodium EDTA can inhibit the activity of metal ions, thereby reducing the erosion and damage of the microetching agent to the metal. Meanwhile, EDTA disodium can also control the dissociation rate of metal ions more accurately in the microetching agent reaction, so as to adjust the etching rate and depth of the microetching agent;
trisodium NTA may form a complex with copper, iron, thereby inhibiting corrosion of the metal while also helping to control the etch rate and shape.
For thiazole carbenes, coordination can take place with the metal surface and a stable complex is formed on the metal surface. This complex can make some of the reactive sites on the metal surface more susceptible to chemical reactions, thereby facilitating the microetching process.
Meanwhile, the thiazole carbene also has reducibility, and the reduction reaction is carried out on the oxide on the metal surface in the microetching solution, so that the microetching action is promoted.
Therefore, the thiazole carbene can be used as an additive in the microetching accelerator, so that the chemical reaction rate of the microetching accelerator is improved, the performance of the microetching accelerator is improved, and the corrosion effect of the microetching effect on the metal surface is enhanced.
The above embodiments are merely illustrative of the preferred embodiments of the present invention and are not intended to limit the scope of the present invention, and various modifications and improvements made by those skilled in the art to the technical solution of the present invention should fall within the scope of protection defined by the claims of the present invention without departing from the spirit of the design of the present invention.
Claims (6)
1. A microetching accelerator, characterized by: comprises, by weight, 0.5-1% of promoter, 1-10% of nonionic surfactant, 0.2-0.8% of catalyst, 1-5% of chelating agent, 2-5% of builder, and the balance of water.
2. Microetching accelerator according to claim 1, characterized in that: the accelerator is one or a mixture of dimercaptobenzothiazole and oxydivinyl benzothiazole.
3. Microetching accelerator according to claim 1, characterized in that: the nonionic surfactant is one or a mixture of more of octyl phenol polyoxyethylene ether NP-9, nonyl phenol polyoxyethylene ether AEO-9, isomeric alcohol polyoxyethylene ether 1005 and the like.
4. Microetching accelerator according to claim 1, characterized in that: the catalyst is one or a mixture of a plurality of thiazole soldiers, thiazole nail carbenes and the like.
5. Microetching accelerator according to claim 1, characterized in that: the chelating agent is one or more of EDTA disodium, NTA trisodium, potassium sodium tartrate and the like.
6. Microetching accelerator according to claim 1, characterized in that: the builder is one or a mixture of more of sodium metasilicate pentahydrate, sodium tripolyphosphate and the like.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310709001.2A CN116732519A (en) | 2023-06-15 | 2023-06-15 | Microetching accelerator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310709001.2A CN116732519A (en) | 2023-06-15 | 2023-06-15 | Microetching accelerator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116732519A true CN116732519A (en) | 2023-09-12 |
Family
ID=87907650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310709001.2A Pending CN116732519A (en) | 2023-06-15 | 2023-06-15 | Microetching accelerator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116732519A (en) |
-
2023
- 2023-06-15 CN CN202310709001.2A patent/CN116732519A/en active Pending
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