CN109112545A - A kind of chemical etching composition of copper-molybdenum alloy film - Google Patents
A kind of chemical etching composition of copper-molybdenum alloy film Download PDFInfo
- Publication number
- CN109112545A CN109112545A CN201811116861.0A CN201811116861A CN109112545A CN 109112545 A CN109112545 A CN 109112545A CN 201811116861 A CN201811116861 A CN 201811116861A CN 109112545 A CN109112545 A CN 109112545A
- Authority
- CN
- China
- Prior art keywords
- acid
- hydrogen peroxide
- copper
- etching
- alloy film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a kind of chemical etching compositions of copper-molybdenum alloy film, it is in terms of 100% by the total weight of etching composition, include following components: hydrogen peroxide 5%~15%, organic acid 0.5%~5%, stabilizer of hydrogen peroxide 0.1%~5%, metal-chelator 2.0%~7.0%, etch additive 0.001%~0.5%, surfactant 0.03%~0.1%, phosphoric acid ester substance 0.005%~0.05, pH adjusting agent 3.0%~7.0%, surplus are deionized water.Chemical etching composition of the present invention has many advantages, such as high-efficiency high-accuracy etching, long service life, will not generate etch residue in etching process and reaction condition is mild, and operation is convenient.
Description
Technical field
The present invention relates to etching technique field, the chemical etching composition of specially a kind of copper-molybdenum alloy film.
Background technique
Etching is the technology by materials'use chemical reaction or physical shock effect and removal.Etching technique is divided into wet etching
And dry ecthing, wherein wet etching is to achieve the purpose that etching via chemical reaction using chemical reagent.
In recent years, while people are continuously increased the demand of liquid crystal display, to the quality and picture precision of product
Higher requirements are also raised, and the effect etched can directly result in the quality of circuit board manufacturing process, influence high density and carefully lead
The precision and quality of line image.Aluminum or aluminum alloy has been used in the metal wiring of previous liquid crystal display device, but with liquid
The enlargement and high resolution of crystal display, the grid line and data line connecting with thin film transistor (TFT) can be elongated, these are matched
The resistance of line also will increase, therefore the problems such as generation signal delay.So research steering and the lower material, that is, copper of resistance or with
Copper is the wiring combination of principal component, and molybdenum have with the adaptation of the substrates such as glass it is high, be difficult to generate the expansion to silicon semiconductor film
It dissipates, and has both block.Therefore, the film forming such as sputtering method will be passed through comprising copper, by the stacked film of the copper molybdenum alloy of principal component of copper
Technique forms a film on the substrates such as glass, then by resist etc. is become electrode as the etching work procedure that exposure mask is etched
Pattern, so that the good wiring of good conductivity, thermal conductivity be prepared.
Fluorine is usually added in order to improve the speed of etching copper molybdenum alloy in previous dioxygen water system copper molybdenum alloy etching solution
Compound and inorganic acid.These etching solutions are disadvantageous in that the fluoride of addition is extremely unfriendly to environment, and corrosive power is strong,
In reagent etching process, it tends to be difficult to control etching angle and etching period, to the risk of operator and client device
Also higher, and inorganic acid is mainly sulfuric acid, phosphoric acid, environmental pollution is more serious, in addition etching solution copper currently used in the market
For meltage generally between 4000ppm~5000ppm, service life is shorter.As more and more producers begin to use copper
And its alloy film, the demand to a kind of etching solution that can be improved machining accuracy greatly increase.Therefore, it researches and develops a kind of without fluorination
Object and inorganic acid, environmentally friendly, long service life, and the copper-molybdenum alloy film etching solution small to substrate corrosion are led for this technology
Domain technical problem in the urgent need to address.
Summary of the invention
In view of the above technical defects, the present invention provides a kind of long service life, and etching is without residue, etching efficiency height and precision
Height, small to substrate corrosion and environment amenable copper-molybdenum alloy film etching solution.
The present invention provides a kind of chemical etching composition of copper-molybdenum alloy film, is with the total weight of etching composition
100% meter, includes following components:
Hydrogen peroxide 5%~15%
Organic acid 0.5%~5%
Stabilizer of hydrogen peroxide 0.1%~5%
Metal-chelator 2.0%~7.0%
Etch additive 0.001%~0.5%
Surfactant 0.03%~0.1%
Phosphoric acid ester substance 0.005%~0.05%
PH adjusting agent 3.0%~7.0%
Surplus is deionized water.
Primary oxidizers of the present invention using hydrogen peroxide as copper molybdenum alloy, the additive amount of hydrogen peroxide is in 5%~15% model
It encloses interior certifiable etching effectively to carry out, while also can control etch-rate and maintaining within the appropriate range, to be easier to control
Etch quantity avoids etching excessive；It adds organic acid to promote by the copper dissolution of hydrogen peroxide oxidation, the additive amount of organic acid is less than
0.5% is easy to produce etch residue in etching process, and additive amount, which is greater than 5%, to be influenced to etch cone angle；By adding peroxidating
Stabilized hydrogen agent can reduce the speed of hydrogen peroxide decomposition, extend the service life of composition, and additive amount can not be dropped less than 0.1%
The speed that low hydrogen peroxide decomposes, additive amount are greater than 5% and increase production cost；And using being produced in chelating agent and etching process
Raw metal ion forms chelated complexes, makes its deactivation, to inhibit the decomposition reaction of hydrogen peroxide in etching solution, adds
Dosage can not chelate completely less than 2.0% with the metal ion generated in etching process, and additive amount is greater than 7.0% and increases production
Cost；Simultaneously in order to adjust metallic etch rates, the present invention also added etching additive for slowing down etch-rate, be added
Etching additive be mainly corrosion inhibiter, be easy to control the etch-rate for the etching composition being prepared, additive amount is few
It is unable to reach corrosion mitigating effect in 0.001%, additive amount is greater than 0.5% and inhibits etch activity, reduces etch-rate, influence etching
Precision；The addition of surfactant is the wetability and permeability in order to guarantee etching composition to substrate, is effectively improved
The effect for improving etch-rate is not achieved less than 0.03% for etch-rate, additive amount, and additive amount is greater than 0.1% etching reaction mistake
In fierceness, cause etching process uncontrollable；By addition phosphoric acid ester substance, reacted with the molybdenum generated in etching process, thus
Solve the problems, such as etching position molybdenum residual, additive amount can not effectively remove remaining molybdenum less than 0.005%, and additive amount is greater than
0.5% increases production cost；And buffer of the pH adjusting agent as solution environmental pH value is added, guarantee the stabilization of hydrogen peroxide
Property, avoiding the too fast degradation of hydrogen peroxide, buffering effect is not achieved less than 3.0% in additive amount so as to shorten its service life, addition
Amount is greater than 7.0% and increases production cost；It can avoid the composition that the influence of the ion in water is prepared using deionized water to stablize
Property, reduce its service life.The above analysis as it can be seen that the present invention using hydrogen peroxide as primary oxidizers, by adding
Hydrogen oxide stabilizer, chelating agent inhibit hydrogen peroxide in etching process to decompose, and keep etching reaction process mild and extend using the longevity
Life, in order to solve the impurity residue problem of etching process generation, add organic acid and phosphoric acid ester substance respectively with etching process
The copper and molybdenum of middle generation react, and make not generate etch residue in etching process completely, and pass through pH adjusting agent and surface-active
Agent improves the stability of etching composition and wetability and permeability to substrate, improves its applicability as adjuvant.
Further, it is in terms of 100% by the total weight of etching composition, includes following components:
Hydrogen peroxide 5%~12%
Organic acid 0.5%~3%
Stabilizer of hydrogen peroxide 0.1%~4%
Metal-chelator 2.0%~4.0%
Etch additive 0.001%~0.5%
Surfactant 0.005%~0.02%
Phosphoric acid ester substance 0.005%~0.02%
PH adjusting agent 3.0%~5.0%
Surplus is deionized water.
The present invention inhibits etching using hydrogen peroxide as primary oxidizers, by addition stabilizer of hydrogen peroxide, chelating agent
Hydrogen peroxide decomposes in the process, keeps etching reaction process mild and prolongs the service life, in order to solve the miscellaneous of etching process generation
Matter residue problem, adds organic acid and phosphoric acid ester substance is reacted with the copper and molybdenum generated in etching process respectively, makes etched
Etch residue is not generated in journey completely, and etching combination is improved as adjuvant by pH adjusting agent and surfactant
The stability of object and wetability and permeability to substrate, improve its applicability.
Further, it is in terms of 100% by the total weight of etching composition, includes following components:
Hydrogen peroxide 8%
Organic acid 3%
Stabilizer of hydrogen peroxide 0.2%
Metal-chelator 2.8%
Etch additive 0.005%
Surfactant 0.0.5%
Phosphoric acid ester substance 0.01%
PH adjusting agent 5.0%
Surplus is deionized water.
The chemical etching being prepared according to above-mentioned weight percent does not generate erosion with composition completely in etching process
Residue is carved, etching to glass substrate is effectively inhibited, under mild operating condition efficiently and accurately to copper-molybdenum alloy film
It is etched, technological operation is very convenient, easily controllable, and service life can reach 8000ppm or more.
Further, the organic acid be one of tartaric acid, isoleucine, valine, salicylic acid, hydroxyacetic acid or
Person is a variety of.Organic acid can promote by the dissolution of the copper of hydrogen peroxide oxidation, and selected organic acid has preferable stability, and
It is acid moderate, guarantee that reaction process mitigates.
Further, the stabilizer of hydrogen peroxide is ammonia carboxylic acid type stabilizer of hydrogen peroxide, organic phosphonic compound, has
Organic phosphonates, poly- (more) carboxylic acid type stabilizer of hydrogen peroxide, diethyl triamine pentaacetic acid, phenylurea, 8-hydroxyquinoline, poly amic acid
One of or it is a variety of.Stabilizer of hydrogen peroxide selected by the present invention belongs to solvay-type stabilizer, by in etching process
The heavy metal ion of generation forms chelate, so that the hydrogen peroxide for reducing or eliminating heavy metal ion decomposes, prevents gold
The catalytic decomposition ability for belonging to ion is greater than absorbent-type stabilizer, has certain chelating and shielding action to metal ion, certain
The catalysis of metal ion can be inhibited to damage in degree.
Further, the metal-chelator be ethylenediamine tetra-acetic acid, aminotriacetic acid, diethylene-triamine pentaacetic acid,
One of diethylene triamine pentacetic acid (DTPA), hydroxyethylethylene diamine tri-acetic acid, gluconic acid and its corresponding salt, phytic acid are a variety of.
Metal-chelator is added and assists stabilizer of hydrogen peroxide, with other metal ions such as magnesium ion, calcium ion, ferrous ion isochela
It closes, reduces influence of other metal ions to etching composition stability.
Further, the etching additive is 5- aminotetrazole, 3- amino -1,2,4- triazole, benzotriazole, hydroxyl
One or more of methylbenzotrazole, imidazoles, benzimidazole, polyhydroxy benzenes formic acid, thiocarbamide.Etching additive can be effective
It prevents side from corroding, makes to etch lines straight without burr, and be added in etching composition and play stable etching speed, stablize erosion
The molten capacity of complexing power raising that etching solution concentration prevents crystallization, increases copper, to effectively prolong the service life.
Further, the phosphoric acid species are phosphorous acid mono-n-butylester, phosphoric acid mono-n-butylester, diethyl phosphite, di(2-ethylhexyl)phosphate
One or both of ethyl ester.Added phosphoric acid species can react solution molybdenum residual with the molybdenum generated in etching process and ask
Topic makes to etch the smooth no molybdenum residual in surface.
Further, the pH adjusting agent is sodium hydroxide, potassium hydroxide, ethanol amine, diethanol amine, triethanolamine, second
Any one in diamines, isopropanolamine.PH adjusting agent formation buffer system is added and guarantees that etching composition entirety pH value is in
More stable state guarantees etch-rate.
Further, the surfactant is polyoxyethylene sorbitan monoleate, in PE-100,188-A, fatty alcohol polyoxyethylene ether
It is one or more.Surfactant, which is added, can effectively improve etching composition to the wetability and permeability of substrate, improve
Etch-rate, selected surfactant be market common agents, be easy obtain and it is at low cost.
The chemical etching composition of copper-molybdenum alloy film of the present invention, have it is following the utility model has the advantages that
The first, high-efficiency high-accuracy etches；The present invention is using hydrogen peroxide as primary oxidizers, by controlling hydrogen peroxide additive amount
Guarantee that etching effectively carries out, while also control etch-rate maintains the high efficiency for guaranteeing etching within the appropriate range, and adds
Entering to etch additive effectively prevent side to corrode, and makes to etch lines straight without burr, etched obtained route precision is high；
The second, long service life；Oxidants hydrogen peroxide is easily decomposed to water and oxygen in etching process, reduces etching group
The etch capabilities for closing object, keep its service life short, and etching cost increases, and the present invention passes through addition stabilizer of hydrogen peroxide and etching
The heavy metal ion generated in the process forms chelate, so that the hydrogen peroxide for reducing or eliminating heavy metal ion decomposes,
The catalysis of metal ion can be inhibited to damage to a certain extent, slow down the decomposition rate of hydrogen peroxide, and it is steady to add etching additive
Determine etching speed, stablize the molten capacity of complexing power raising that etching solution concentration prevents crystallization, increases copper, so that effectively extending makes
With the service life, etching composition service life is made to can reach 8000ppm or more；
Etch residue is not generated in third, etching process；The present invention is promoted by addition organic acid by the copper of hydrogen peroxide oxidation
Dissolution, selected organic acid has preferable stability, guarantees the copper that is oxidized of continued dissolution in etching process, and cooperate
The molybdenum generated in phosphoric acid species and etching process is added and reacts solution molybdenum residue problem, keeps etching surface smooth residual without etching
Slag makes to etch surface Glabrous thorn；
4th, reaction condition is mild, and operation facilitates easy to control；The present invention is guaranteeing to lose by control hydrogen peroxide additive amount
It is carved with while effect carries out that also control etching maintains within the appropriate range, so that etch quantity be made to be easy to control, when use is only needed
By the present invention down to the position of required etching, operation is convenient, and by pH adjusting agent, stabilizer of hydrogen peroxide,
The addition of chelating agent etc. keeps etching composition stability good, can be etched reaction in normal temperature condition, and reaction condition is mild,
Also the controllability of etching process is improved.
Specific embodiment
In order that those skilled in the art will better understand the technical solution of the present invention, below with reference to embodiment to this hair
It is bright to be described in further detail.
Embodiment 1
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 10%
Organic acid 3.0%
Stabilizer of hydrogen peroxide 1.5%
Metal-chelator 3.5%
Etch additive 0.01%
Surfactant 0.05%
Phosphoric acid ester substance 0.01%
PH adjusting agent 2%
Surplus is deionized water.
Wherein organic acid is isoleucine, and stabilizer of hydrogen peroxide is poly amic acid, and metal-chelator is ethylenediamine tetraacetic
Acetic acid, etching additive are thiocarbamide, and surfactant PE-100, phosphoric acid ester substance is phosphoric acid mono-n-butylester, and pH adjusting agent is
Sodium hydroxide.
Embodiment 2
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 8%
Organic acid 3.0%
Stabilizer of hydrogen peroxide 0.2%
Metal-chelator 2.8%
Etch additive 0.005%
Surfactant 0.05%
Phosphoric acid ester substance 0.01%
PH adjusting agent 5%
Surplus is deionized water.
Wherein organic acid is salicylic acid, and stabilizer of hydrogen peroxide DTPA, metal-chelator is gluconic acid, etching addition
Agent is 3- amino -1,2, and 4- triazole, surfactant 188-A, phosphoric acid ester substance is phosphorous acid mono-n-butylester, pH adjusting agent
For triethanolamine.
Embodiment 3
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 8%
Organic acid 2.0%
Stabilizer of hydrogen peroxide 0.2%
Metal-chelator 2.0%
Etch additive 0.005%
Surfactant 0.01%
Phosphoric acid ester substance 0.01%
PH adjusting agent 2.3%
Surplus is deionized water.
Wherein organic acid is tartaric acid, and stabilizer of hydrogen peroxide DTPA, metal-chelator is nitrilotriacetic acid, etching addition
Agent is 3- amino -1,2, and 4- triazole, surfactant is polyoxyethylene sorbitan monoleate, and phosphoric acid ester substance is phosphorous acid mono-n-butylester, pH
Regulator is ethanol amine.
Embodiment 4
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 7%
Organic acid 2.8%
Stabilizer of hydrogen peroxide 0.6%
Metal-chelator 2.5%
Etch additive 0.002%
Surfactant 0.005%
Phosphoric acid ester substance 0.018%
PH adjusting agent 4%
Surplus is deionized water.
Wherein organic acid is salicylic acid, and stabilizer of hydrogen peroxide is phenylurea, and metal-chelator is phytic acid, etches additive
For benzotriazole, surfactant 188-A, phosphoric acid ester substance is diethyl phosphate, and pH adjusting agent is diethanol amine.
Embodiment 5
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 6.2%
Organic acid 3.5%
Stabilizer of hydrogen peroxide 0.2%
Metal-chelator 3.5%
Etch additive 0.01%
Surfactant 0.005%
Phosphoric acid ester substance 0.1%
PH adjusting agent 3.2%
Surplus is deionized water.
Wherein organic acid is tartaric acid, and stabilizer of hydrogen peroxide DTPA, metal-chelator is ethylenediamine tetra-acetic acid, etching
Additive is P-hydroxybenzoic acid, and surfactant PE-100, phosphoric acid ester substance is phosphorous acid mono-n-butylester, and pH adjusting agent is
Ethanol amine.
Comparative example 1
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 8%
Organic acid 3.0%
Stabilizer of hydrogen peroxide 1.5%
Metal-chelator 3.5%
Etch additive 0.01%
Surfactant 0.005%
Phosphoric acid ester substance 0%
PH adjusting agent 2%
Surplus is deionized water.
Wherein organic acid is isoleucine, and stabilizer of hydrogen peroxide is poly amic acid, and metal-chelator is nitrilotriacetic acid,
Etching additive is imidazoles, and surfactant PE-100, phosphoric acid ester substance do not add, and pH adjusting agent is sodium hydroxide.
Comparative example 2
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 6.5%
Organic acid 3.5%
Stabilizer of hydrogen peroxide 0.5%
Metal-chelator 2.8%
Etch additive 0%
Surfactant 0.01%
Phosphoric acid ester substance 0.01%
PH adjusting agent 2.8%
Surplus is deionized water.
Wherein organic acid is valine, and stabilizer of hydrogen peroxide is phenylurea, and metal-chelator is gluconic acid, and etching adds
Agent is added to be not added with, surfactant is polyoxyethylene sorbitan monoleate, and phosphoric acid ester substance is phosphorous acid mono-n-butylester, and pH adjusting agent is hydroxide
Potassium.
Comparative example 3
A kind of chemical etching composition of copper-molybdenum alloy film is in terms of 100%, comprising following by the total weight of etching composition
Component:
Hydrogen peroxide 8%
Organic acid 0%
Stabilizer of hydrogen peroxide 0.2%
Metal-chelator 2.0%
Etch additive 0.005%
Surfactant 0.01%
Phosphoric acid ester substance 0.01%
PH adjusting agent 2.1%
Surplus is deionized water.
Wherein organic acid is not added with, and stabilizer of hydrogen peroxide DTPA, metal-chelator is nitrilotriacetic acid, etches additive
For 3- amino -1,2,4- triazole, surfactant is polyoxyethylene sorbitan monoleate, and phosphoric acid ester substance is phosphorous acid mono-n-butylester, pH tune
Section agent is ethanol amine.
The etchant being prepared using above-described embodiment 1 to 5 and comparative example 1 to 3 is shown for TFT-LCD
The cupric and alloy metal film of the electrodes such as device.The blocking formed by molybdenum system material is stacked gradually using sputtering method on the glass substrate
Film and by copper or the copper formed using copper as the material of principal component/molybdenum system plural layers, development, exposure are formed with desired anti-
Erosion resisting coating pattern.By Cu/Mo(4500/150) glass substrate is etched at 32 DEG C with etching solution for layer metal structure, it etches
Time can be adjusted according to the film thickness etc. of metallic film, it is however generally that be 1-5 minutes, after etching, it is clear to carry out ultrapure water
It washes and uses and be dried with nitrogen.By removing ability to etching cone angle, etching solution residue, CD loses uniformity, service life (to etch
Liquid still keeps the highest Cu content dissolved when preferable performance to indicate) it is evaluated, embodiment and comparative example result such as following table institute
Show.
Embodiment and comparative example test result contrast table
It is compared by the above test result as it can be seen that the etching composition long service life that the present invention is prepared, and etches cone
Angular displacement is small, and etch-rate height and effectively etching of the inhibition to glass substrate remain after etching without residue, the smooth precision of etching face
It is high.
Above-mentioned is presently preferred embodiments of the present invention, is not intended to limit the present invention in any form；All industry
Those of ordinary skill can implement the present invention by the above and swimmingly；But all those skilled in the art exist
Do not depart within the scope of technical solution of the present invention, a little change for being made using disclosed above technology contents, modification with
The equivalent variations of differentiation is equivalent embodiment of the invention；Meanwhile all substantial technologicals according to the present invention are to above embodiments
The variation, modification and evolution etc. of made any equivalent variations, within the protection scope for still falling within technical solution of the present invention.
Claims (10)
1. a kind of chemical etching composition of copper-molybdenum alloy film, which is characterized in that be with the total weight of etching composition
100% meter, includes following components:
Hydrogen peroxide 5%~15%
Organic acid 0.5%~5%
Stabilizer of hydrogen peroxide 0.1%~5%
Metal-chelator 2.0%~7.0%
Etch additive 0.001%~0.5%
Surfactant 0.03%~0.1%
Phosphoric acid ester substance 0.005%~0.05%
PH adjusting agent 3.0%~7.0%
Surplus is deionized water.
2. the chemical etching composition of copper-molybdenum alloy film according to claim 1, which is characterized in that with etching group
The total weight for closing object is 100% meter, includes following components:
Hydrogen peroxide 5%~12%
Organic acid 0.5%~3%
Stabilizer of hydrogen peroxide 0.1%~4%
Metal-chelator 2.0%~4.0%
Etch additive 0.001%~0.5%
Surfactant 0.005%~0.02%
Phosphoric acid ester substance 0.005%~0.02%
PH adjusting agent 3.0%~5.0%
Surplus is deionized water.
3. the chemical etching composition of copper-molybdenum alloy film according to claim 2, which is characterized in that with etching group
The total weight for closing object is 100% meter, includes following components:
Hydrogen peroxide 8%
Organic acid 3%
Stabilizer of hydrogen peroxide 0.2%
Metal-chelator 2.8%
Etch additive 0.005%
Surfactant 0.0.5%
Phosphoric acid ester substance 0.01%
PH adjusting agent 5.0%
Surplus is deionized water.
4. the chemical etching composition of copper-molybdenum alloy film according to any one of claims 1 to 3, it is characterised in that: institute
Stating organic acid is one or more of tartaric acid, isoleucine, valine, salicylic acid, hydroxyacetic acid.
5. the chemical etching composition of copper-molybdenum alloy film according to claim 4, it is characterised in that: the hydrogen peroxide
Stabilizer is ammonia carboxylic acid type stabilizer of hydrogen peroxide, organic phosphonic compound, organic phosphonate, poly- (more) carboxylic acid type hydrogen peroxide
One of stabilizer, diethyl triamine pentaacetic acid, phenylurea, 8-hydroxyquinoline, poly amic acid are a variety of.
6. the chemical etching composition of copper-molybdenum alloy film described in any one of -3,5, feature exist according to claim 1
In: the metal-chelator is ethylenediamine tetra-acetic acid, aminotriacetic acid, diethylene-triamine pentaacetic acid, five second of diethylenetriamine
One of acid, hydroxyethylethylene diamine tri-acetic acid, gluconic acid and its corresponding salt, phytic acid are a variety of.
7. the chemical etching composition of copper-molybdenum alloy film described in any one of -3,5, feature exist according to claim 1
In: the etching additive be 5- aminotetrazole, 3- amino-1,2,4-triazol, benzotriazole, methylol benzotriazole,
One or more of imidazoles, benzimidazole, polyhydroxy benzenes formic acid, thiocarbamide.
8. the chemical etching composition of copper-molybdenum alloy film described in any one of -3,5, feature exist according to claim 1
In: phosphoric acid species be phosphorous acid mono-n-butylester, phosphoric acid mono-n-butylester, diethyl phosphite, one of diethyl phosphate or
Two kinds.
9. the chemical etching composition of copper-molybdenum alloy film described in any one of -3,5, feature exist according to claim 1
In: the pH adjusting agent is sodium hydroxide, in potassium hydroxide, ethanol amine, diethanol amine, triethanolamine, ethylenediamine, isopropanolamine
Any one.
10. the chemical etching composition of copper-molybdenum alloy film described in any one of -3,5, feature exist according to claim 1
In: the surfactant be one of polyoxyethylene sorbitan monoleate, PE-100,188-A, fatty alcohol polyoxyethylene ether or a variety of.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811116861.0A CN109112545A (en) | 2018-09-25 | 2018-09-25 | A kind of chemical etching composition of copper-molybdenum alloy film |
| PCT/CN2018/119835 WO2020062590A1 (en) | 2018-09-25 | 2018-12-07 | Composition for chemical etching of copper-molybdenum alloy film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811116861.0A CN109112545A (en) | 2018-09-25 | 2018-09-25 | A kind of chemical etching composition of copper-molybdenum alloy film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109112545A true CN109112545A (en) | 2019-01-01 |
Family
ID=64856215
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811116861.0A Pending CN109112545A (en) | 2018-09-25 | 2018-09-25 | A kind of chemical etching composition of copper-molybdenum alloy film |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN109112545A (en) |
| WO (1) | WO2020062590A1 (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110204358A (en) * | 2019-06-26 | 2019-09-06 | 匡云叶 | A kind of ceramics pretreatment fluid and preprocess method |
| CN111074278A (en) * | 2020-01-03 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Etching solution composition and etching method of copper-molybdenum film layer |
| CN111155091A (en) * | 2020-02-13 | 2020-05-15 | Tcl华星光电技术有限公司 | Etching solution, additive and method for manufacturing metal wiring |
| CN111349938A (en) * | 2020-03-23 | 2020-06-30 | 深圳市华星光电半导体显示技术有限公司 | Etching chelating agent, preparation method thereof and etching solution composition |
| CN111519190A (en) * | 2020-05-27 | 2020-08-11 | 湖北兴福电子材料有限公司 | Etching solution for stabilizing etching cone angle in copper process panel and stabilizing method |
| CN111719156A (en) * | 2019-03-20 | 2020-09-29 | 易安爱富科技有限公司 | Etching composition and etching method using same |
| CN111972413A (en) * | 2020-08-05 | 2020-11-24 | 东莞东阳光科研发有限公司 | Hydrogen peroxide disinfection composition and preparation method thereof |
| CN113529085A (en) * | 2021-07-15 | 2021-10-22 | 深圳市华星光电半导体显示技术有限公司 | Etching solution and etching method |
| CN114107989A (en) * | 2020-08-31 | 2022-03-01 | 深圳新宙邦科技股份有限公司 | Etching solution for copper-containing metal film |
| CN114250469A (en) * | 2020-09-24 | 2022-03-29 | 深圳新宙邦科技股份有限公司 | Etching solution composition and preparation method thereof |
| CN115558046A (en) * | 2022-10-10 | 2023-01-03 | 上海昶法新材料有限公司 | Papermaking pulping auxiliary agent and preparation method thereof |
| WO2023069409A1 (en) * | 2021-10-20 | 2023-04-27 | Entegris, Inc. | Selective wet etch composition and method |
| CN116180084A (en) * | 2023-01-06 | 2023-05-30 | 江苏和达电子科技有限公司 | Copper-molybdenum alloy etching liquid composition and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104498951A (en) * | 2014-12-11 | 2015-04-08 | 深圳新宙邦科技股份有限公司 | Oxydol etching solution for copper-molybdenum alloy films |
| CN105648439A (en) * | 2014-11-27 | 2016-06-08 | 三菱瓦斯化学株式会社 | Liquid composition and etching method therewith |
| CN105908188A (en) * | 2016-05-23 | 2016-08-31 | 杭州格林达化学有限公司 | Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination |
| KR20160106544A (en) * | 2013-01-14 | 2016-09-12 | 주식회사 이엔에프테크놀로지 | Etching composition for copper/molybdenum or copper/molybdenum alloy multilayers |
| CN107151795A (en) * | 2017-06-02 | 2017-09-12 | 苏州晶瑞化学股份有限公司 | A kind of copper-molybdenum alloy film etching solution |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104480469B (en) * | 2014-12-12 | 2018-02-23 | 江阴润玛电子材料股份有限公司 | A kind of TFT copper-molybdenums stacked film etchant and engraving method |
| KR102269330B1 (en) * | 2015-03-25 | 2021-06-25 | 동우 화인켐 주식회사 | Etchant composition for copper-containing metal layer and preparing method of an array substrate for liquid crystal display using same |
| TWI726995B (en) * | 2016-02-17 | 2021-05-11 | 易安愛富科技有限公司 | Etching composition |
| CN106637209A (en) * | 2016-12-29 | 2017-05-10 | 深圳市华星光电技术有限公司 | Etching solution composition and metal film etching method using same |
-
2018
- 2018-09-25 CN CN201811116861.0A patent/CN109112545A/en active Pending
- 2018-12-07 WO PCT/CN2018/119835 patent/WO2020062590A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160106544A (en) * | 2013-01-14 | 2016-09-12 | 주식회사 이엔에프테크놀로지 | Etching composition for copper/molybdenum or copper/molybdenum alloy multilayers |
| CN105648439A (en) * | 2014-11-27 | 2016-06-08 | 三菱瓦斯化学株式会社 | Liquid composition and etching method therewith |
| CN104498951A (en) * | 2014-12-11 | 2015-04-08 | 深圳新宙邦科技股份有限公司 | Oxydol etching solution for copper-molybdenum alloy films |
| CN105908188A (en) * | 2016-05-23 | 2016-08-31 | 杭州格林达化学有限公司 | Hydrogen peroxide system etching liquid for TFT copper-molybdenum lamination |
| CN107151795A (en) * | 2017-06-02 | 2017-09-12 | 苏州晶瑞化学股份有限公司 | A kind of copper-molybdenum alloy film etching solution |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111719156A (en) * | 2019-03-20 | 2020-09-29 | 易安爱富科技有限公司 | Etching composition and etching method using same |
| CN110204358B (en) * | 2019-06-26 | 2021-11-09 | 匡云叶 | Ceramic pretreatment liquid and pretreatment method |
| CN110204358A (en) * | 2019-06-26 | 2019-09-06 | 匡云叶 | A kind of ceramics pretreatment fluid and preprocess method |
| CN111074278A (en) * | 2020-01-03 | 2020-04-28 | 深圳市华星光电半导体显示技术有限公司 | Etching solution composition and etching method of copper-molybdenum film layer |
| CN111155091A (en) * | 2020-02-13 | 2020-05-15 | Tcl华星光电技术有限公司 | Etching solution, additive and method for manufacturing metal wiring |
| CN111349938A (en) * | 2020-03-23 | 2020-06-30 | 深圳市华星光电半导体显示技术有限公司 | Etching chelating agent, preparation method thereof and etching solution composition |
| US11674229B2 (en) | 2020-03-23 | 2023-06-13 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Etching chelating agent, manufacturing method thereof, and etching solution composition |
| CN111519190A (en) * | 2020-05-27 | 2020-08-11 | 湖北兴福电子材料有限公司 | Etching solution for stabilizing etching cone angle in copper process panel and stabilizing method |
| CN111519190B (en) * | 2020-05-27 | 2022-03-18 | 湖北兴福电子材料有限公司 | Etching solution for stabilizing etching cone angle in copper process panel and stabilizing method |
| CN111972413B (en) * | 2020-08-05 | 2023-05-09 | 东莞东阳光科研发有限公司 | Hydrogen peroxide disinfection composition and preparation method thereof |
| CN111972413A (en) * | 2020-08-05 | 2020-11-24 | 东莞东阳光科研发有限公司 | Hydrogen peroxide disinfection composition and preparation method thereof |
| CN114107989A (en) * | 2020-08-31 | 2022-03-01 | 深圳新宙邦科技股份有限公司 | Etching solution for copper-containing metal film |
| CN114250469A (en) * | 2020-09-24 | 2022-03-29 | 深圳新宙邦科技股份有限公司 | Etching solution composition and preparation method thereof |
| CN114250469B (en) * | 2020-09-24 | 2023-04-18 | 深圳新宙邦科技股份有限公司 | Etching solution composition and preparation method thereof |
| CN113529085A (en) * | 2021-07-15 | 2021-10-22 | 深圳市华星光电半导体显示技术有限公司 | Etching solution and etching method |
| WO2023069409A1 (en) * | 2021-10-20 | 2023-04-27 | Entegris, Inc. | Selective wet etch composition and method |
| CN115558046A (en) * | 2022-10-10 | 2023-01-03 | 上海昶法新材料有限公司 | Papermaking pulping auxiliary agent and preparation method thereof |
| CN116180084A (en) * | 2023-01-06 | 2023-05-30 | 江苏和达电子科技有限公司 | Copper-molybdenum alloy etching liquid composition and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020062590A1 (en) | 2020-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109112545A (en) | A kind of chemical etching composition of copper-molybdenum alloy film | |
| JP5827336B2 (en) | Metal film etching composition | |
| CN103258727B (en) | Etchant, engraving method and liquid for preparing etching agent | |
| EP2922086B1 (en) | Composition, system, and process for TiNxOy removal | |
| CN103814432B (en) | Increase the engraving method of copper/molybdenum alloy film of etching solution etching consumption | |
| CN108291314B (en) | Composition for etching copper and composition for etching hydrogen peroxide metal | |
| KR20150052396A (en) | Manufacturing method of an array substrate for liquid crystal display | |
| CN113061891A (en) | Metal wiring etching solution composition and metal wiring forming method using same | |
| CN110396693B (en) | Etching liquid composition, etching method using same, and method for producing display device or semiconductor containing IGZO | |
| KR102131394B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| CN110438505A (en) | Wafer-level packaging titanium seed etching solution | |
| KR20150024764A (en) | Manufacturing method of an array substrate for liquid crystal display | |
| JP6892785B2 (en) | Etching liquid composition and etching method | |
| JP2005163108A (en) | Etching agent, and etching method using the same | |
| CN114592191A (en) | Etching solution, etching method and indium gallium zinc oxide semiconductor device | |
| CN115786916A (en) | Copper etching solution and preparation method thereof, and etching method of glass substrate copper | |
| CN114774922B (en) | Molybdenum-aluminum metal etching solution and preparation method and etching method thereof | |
| KR102421008B1 (en) | Etchant composition for seed layer containing copper | |
| CN114250469B (en) | Etching solution composition and preparation method thereof | |
| WO2018074279A1 (en) | Etching fluid composition and etching method | |
| KR102131393B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR102142419B1 (en) | Manufacturing method of an array substrate for liquid crystal display | |
| KR101669772B1 (en) | Composition for etching copper | |
| CN103824808A (en) | Etchant composition, method for forming LED wiring, array substrate, and method for manufacturing array substrate | |
| CN111902569A (en) | Etching solution |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190101 |
|
| RJ01 | Rejection of invention patent application after publication |