CN114326334A - Photoresist stripping liquid - Google Patents
Photoresist stripping liquid Download PDFInfo
- Publication number
- CN114326334A CN114326334A CN202210083754.2A CN202210083754A CN114326334A CN 114326334 A CN114326334 A CN 114326334A CN 202210083754 A CN202210083754 A CN 202210083754A CN 114326334 A CN114326334 A CN 114326334A
- Authority
- CN
- China
- Prior art keywords
- sodium
- tin
- stripping solution
- photoresist
- photoresist stripping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Paints Or Removers (AREA)
Abstract
A photoresist stripping solution. The invention discloses a photoresist stripping liquid, relates to the field of printed circuit board manufacturing, and is mainly applied to pattern electroplating and film stripping. Because the substitute alkali is used, the service life of the stripping liquid can be prolonged, and the efficiency is improved; the tin protecting agent is added, so that tin dissolution is avoided during film stripping, the tin plating thickness can be reduced, and the cost is saved.
Description
Technical Field
The invention relates to the field of printed circuit board manufacturing, in particular to a resist stripping process after pattern electroplating.
Background
At present, the stripping liquid of the corrosion resistant film after pattern electroplating in the manufacturing process of the printed circuit board mainly comprises sodium hydroxide stripping liquid and organic base stripping liquid. Sodium hydroxide is relatively inexpensive and widely used as a resist stripping solution after pattern plating. The disadvantages are short service life, need to replace the groove once a day and low production efficiency; the consumption is high, and a large amount of organic waste liquid is generated; has certain dissolution to tin, the thickness of tin plating needs more than 5um, and the cost of tin plating is high. The main cost of the organic resist stripping liquid is tetramethyl ammonium hydroxide and ethanolamine, the stripping effect of the resist is good, tin is insoluble, but the ammonia nitrogen content is high, the environmental pollution is serious, and the life is short because the film residue is too fine after the resist is stripped and is not easy to filter.
Disclosure of Invention
The invention aims to provide a photoresist stripping solution, which improves the service life of the solution, reduces the discharge capacity of waste liquid and the thickness of tinning and aims at solving the problems of the stripping solution of sodium hydroxide and organic alkali.
In order to achieve the above object, the present invention is realized by the following techniques:
the photoresist stripping liquid consists of inorganic alkali, substitute alkali, copper surface corrosion inhibitor and tin protecting agent, and comprises the following components in percentage by mass:
inorganic base: 2 to 5 percent
Substitution with base: 0.4 to 1.2 percent
Corrosion inhibitor for copper surface: 1-10ppm
Tin protecting agent: 0.01 to 1 percent
Wherein the inorganic base is one or more of sodium hydroxide, potassium hydroxide and ammonia water; the substitute alkali is one or a mixture of more of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium citrate, potassium citrate, sodium polyacrylate and potassium polyacrylate; the copper surface corrosion inhibitor is one or more of sodium nitrate, potassium nitrate, sodium silicate and sodium metasilicate; the tin protecting agent is imidazole compound and alkyl compound, and comprises one or more of thiazolinyl dithio propyl sodium sulfonate, NN-dimethyl thiocarbamoyl propane sodium sulfonate, alkyl ammonium chloride, 3, 5-dimethyl-2-mercapto benzimidazole, benzotriazole and 5-methyl tetrazole, wherein the carbon chain of the alkyl compound is 6-18. The temperature of the stripping liquid is 45-60 ℃, and the operation mode is spraying or soaking and spraying.
Compared with the prior sodium hydroxide stripping solution, the stripping solution has the following beneficial effects:
from the aspect of use of the stripping liquid, the formula of the stripping liquid has long service life, the tank period can be more than 2 weeks, the addition amount of the stripping liquid can be reduced to 0.6-1.0 liter/square meter, the generation amount of organic waste liquid is reduced to 1/2-1/3, the efficiency is improved, and the stripping liquid is more environment-friendly; from the aspect of improving the yield, after the anti-corrosion film is stripped by using the stripping liquid, the copper surface is bright, oxidation cannot occur, the short circuit of an alkaline etching line is reduced, and the yield is improved; from the cost perspective, the stripping solution provided by the invention has a protection effect on a tin coating, can reduce the thickness of the tin coating to 3-4 um, and reduces the cost of tin coating by more than 20%.
Compared with the existing organic alkali stripping solution, the stripping solution has the following beneficial effects:
from the use angle of the stripping liquid, after the corrosion-resistant film is stripped by the organic alkali stripping liquid, film residues are too fine, and a filter screen of a film removing line cannot completely filter, so that the service life of the stripping liquid is influenced, and the tank needs to be replaced for 1 time in 1 week. By using the formula of the stripping liquid, the film residue is relatively fine and smooth, the size of the film residue is between that of sodium hydroxide and organic alkali, the film residue can be filtered by a filter screen, and the service life can reach more than 2 weeks; from the aspect of environmental protection, the organic alkali is a compound containing ammonia nitrogen, the ammonia nitrogen has large pollution to the environment, and the formula of the stripping liquid does not contain organic ammonia nitrogen and has no environmental pollution.
Detailed Description
The invention will now be further illustrated by reference to the following examples, which are intended to illustrate, but not to limit, the invention:
the first embodiment is a photoresist film stripping liquid, which consists of inorganic alkali, substituted alkali, corrosion inhibitor and tin protective agent, and comprises the following specific components in percentage by mass:
sodium hydroxide: 3.5 percent
Sodium carbonate: 0.8 percent
Sodium silicate: 5ppm of
Dimethyl hexadecyl ammonium chloride: 0.2 percent of
The resist film peeling operation was performed according to the following procedure:
pattern copper electroplating → pattern tin electroplating → resist film stripping → alkaline etching → tin stripping → baking → AOI inspection and hole inspection
Wherein, pattern electrotinning, current: 0.9A/dm2And electroplating time: 9min, tin plating thickness: 3.3um
Wherein the temperature of the stripping solution is 50 deg.C, and the operation method comprises soaking for 2 m and spraying for 3 m.
After the photoresist is stripped, the copper surface is bright, the tin surface is grey white, the color is uniform, and the line defects and the hole defects caused by the dissolved tin are not found in the AOI and hole inspection.
In a first comparative example, a photoresist stripping solution is composed of sodium hydroxide, and specifically comprises the following components in percentage by mass:
sodium hydroxide: 5 percent of
The resist film peeling operation was performed according to the following procedure:
pattern copper electroplating → pattern tin electroplating → resist film stripping → alkaline etching → tin stripping → baking → AOI inspection and hole inspection
Wherein, pattern electrotinning, current: 0.9A/dm2And electroplating time: 9min, tin plating thickness: 3.3um
Wherein the temperature of the stripping solution is 50 deg.C, and the operation method comprises soaking for 2 m and spraying for 3 m.
After the photoresist was stripped, the copper surface was bright, the tin surface was grayish white, and was dark gray in a dot or filament shape, and no line defect due to the dissolved tin was found by AOI and via inspection, but copper etching due to the dissolved tin was found in a small hole of 0.25 mm.
The above description is only an example of the present invention, and is not intended to limit the scope of the present invention.
Claims (5)
1. The photoresist stripping liquid is characterized by comprising inorganic base, substitute base, copper surface corrosion inhibitor and tin protective agent, and the photoresist stripping liquid comprises the following components in percentage by mass:
inorganic base: 2 to 5 percent
Tin protecting agent: 0.01 to 1 percent
Substitution with base: 0.4 to 1.2 percent
Corrosion inhibitor for copper surface: 1-10 ppm.
2. The photoresist film stripping solution according to claim 1, wherein the carbon chain of the alkyl compound in the tin protecting agent is between 6 and 18.
3. The photoresist film stripping solution according to claim 2, wherein the tin protecting agent is imidazole compound and alkyl compound, and comprises one or more of thiazolinyl dithiopropyl sodium sulfonate, NN-dimethylthiocarbamoyl propane sodium sulfonate, alkyl ammonium chloride, 3, 5-dimethyl-2-mercaptobenzimidazole, benzotriazole, and 5-methyltetrazole.
4. The photoresist stripping solution according to claim 3, wherein a substitute base is used in the photoresist stripping solution, and the substitute base comprises one or more of sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium citrate, potassium citrate, sodium polyacrylate, and potassium polyacrylate.
5. The photoresist stripping solution according to claim 4, wherein a copper surface corrosion inhibitor is used in the photoresist stripping solution, and the copper surface corrosion inhibitor is one or more of sodium nitrate, potassium nitrate, sodium silicate and sodium metasilicate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210083754.2A CN114326334A (en) | 2022-01-25 | 2022-01-25 | Photoresist stripping liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210083754.2A CN114326334A (en) | 2022-01-25 | 2022-01-25 | Photoresist stripping liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114326334A true CN114326334A (en) | 2022-04-12 |
Family
ID=81029679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210083754.2A Withdrawn CN114326334A (en) | 2022-01-25 | 2022-01-25 | Photoresist stripping liquid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114326334A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114980532A (en) * | 2022-05-17 | 2022-08-30 | 新余市木林森线路板有限公司 | Formula and technology of quick film stripping liquid for circuit board |
-
2022
- 2022-01-25 CN CN202210083754.2A patent/CN114326334A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114980532A (en) * | 2022-05-17 | 2022-08-30 | 新余市木林森线路板有限公司 | Formula and technology of quick film stripping liquid for circuit board |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101153395B (en) | Metal removing solution and metal removing method using the same | |
| CN1861842B (en) | Immersion method | |
| CN103046052B (en) | The stripping liquid of environment-friendly type titanium-containing film and using method thereof | |
| CN101457360B (en) | Organic acid type roughening liquid | |
| US20090139875A1 (en) | Electrolyte for electro-chemical machining of metal product | |
| CN109628934B (en) | Environment-friendly tin removing liquid and preparation method thereof | |
| CN101638778A (en) | Nickel-phosphorus chemical precipitation plating layer of aluminium alloy | |
| JP2009500527A (en) | Tin electrodeposition with properties or characteristics that minimize tin whisker growth | |
| US8808525B2 (en) | Cyanide free electrolyte composition for the galvanic deposition of a copper layer | |
| CN114232030B (en) | PCB methanesulfonic acid tin stripping waste liquid recycling method | |
| CN112351593B (en) | OSP microetching pretreatment liquid for printed circuit board and microetching method | |
| CN110424030B (en) | Cyanide-free alkaline copper electroplating solution, preparation thereof and application thereof in flexible printed circuit board | |
| CN114326334A (en) | Photoresist stripping liquid | |
| CN112853341A (en) | Cleaning and oxidation resisting process for surface treatment of copper foil of printed circuit board | |
| CN102677037B (en) | Immersion tin after-treatment solution composition | |
| US20060280872A1 (en) | Method for direct metallization of non-conducting substrates | |
| CN110952120B (en) | Aluminum alloy nickel plating pretreatment method | |
| JP2011195894A (en) | Chromic-acid-free anticorrosive for ferrous material, and anticorrosion treatment method for ferrous material using the anticorrosive | |
| US20050126429A1 (en) | Additives to stop copper attack by alkaline etching agents such as ammonia and monoethanol amine (MEA) | |
| CN113504715B (en) | Printed circuit board developing additive | |
| CN1297490A (en) | Method for coating surfaces of copper or of copper alloy with tin or tin alloy layer | |
| CN107728438B (en) | Novel solder resist developing solution and preparation method thereof | |
| CN112062294A (en) | Novel phosphorus-free, nitrogen-free and biodegradable environment-friendly pre-film agent | |
| CN1743507A (en) | Chemical etching solution for aluminium and aluminium alloy | |
| JP2020117803A (en) | Indium electroplating composition and method for electroplating indium on nickel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20220412 |
|
| WW01 | Invention patent application withdrawn after publication |