CN1167118C - 用来减少在一集成电路中的向外扩散的方法 - Google Patents
用来减少在一集成电路中的向外扩散的方法 Download PDFInfo
- Publication number
- CN1167118C CN1167118C CNB981255590A CN98125559A CN1167118C CN 1167118 C CN1167118 C CN 1167118C CN B981255590 A CNB981255590 A CN B981255590A CN 98125559 A CN98125559 A CN 98125559A CN 1167118 C CN1167118 C CN 1167118C
- Authority
- CN
- China
- Prior art keywords
- layer
- oxide layer
- polysilicon
- silicon
- plunger
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000004888 barrier function Effects 0.000 claims abstract description 74
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 58
- 239000010703 silicon Substances 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 38
- 230000015572 biosynthetic process Effects 0.000 claims description 29
- 229910052757 nitrogen Inorganic materials 0.000 claims description 19
- 150000004767 nitrides Chemical class 0.000 claims description 14
- 150000003376 silicon Chemical class 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- -1 nitrogenous compound Chemical class 0.000 claims description 5
- 230000026267 regulation of growth Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 53
- 239000003990 capacitor Substances 0.000 abstract description 52
- 239000000377 silicon dioxide Substances 0.000 abstract description 26
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 23
- 238000005530 etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 111
- 229920005591 polysilicon Polymers 0.000 description 108
- 239000003989 dielectric material Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 16
- 238000000137 annealing Methods 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000000428 dust Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000035755 proliferation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RRKXGHIWLJDUIU-UHFFFAOYSA-N 5-bromo-8-chloroisoquinoline Chemical compound C1=NC=C2C(Cl)=CC=C(Br)C2=C1 RRKXGHIWLJDUIU-UHFFFAOYSA-N 0.000 description 1
- 229910019899 RuO Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000009958 sewing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/692—Electrodes
- H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/922—Diffusion along grain boundaries
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US994275 | 1997-12-19 | ||
| US994,275 | 1997-12-19 | ||
| US08/994,275 US6228701B1 (en) | 1997-12-19 | 1997-12-19 | Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugs |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1225506A CN1225506A (zh) | 1999-08-11 |
| CN1167118C true CN1167118C (zh) | 2004-09-15 |
Family
ID=25540496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB981255590A Expired - Lifetime CN1167118C (zh) | 1997-12-19 | 1998-12-16 | 用来减少在一集成电路中的向外扩散的方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6228701B1 (enExample) |
| EP (1) | EP0926717B1 (enExample) |
| JP (1) | JPH11261031A (enExample) |
| KR (1) | KR100596832B1 (enExample) |
| CN (1) | CN1167118C (enExample) |
| DE (1) | DE69841923D1 (enExample) |
| TW (1) | TW406408B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0986095A3 (de) * | 1998-09-08 | 2005-08-17 | Infineon Technologies AG | Schichtanordnung mit einer Materialschicht und einer im Bereich der Korngrenzen der Materialschicht angeordneten Diffusionsbarrierenschicht, und Verfahren zur Herstellung derselben |
| KR100351451B1 (ko) * | 1999-12-30 | 2002-09-09 | 주식회사 하이닉스반도체 | 반도체메모리장치의 커패시터제조방법 |
| US6686298B1 (en) * | 2000-06-22 | 2004-02-03 | Micron Technology, Inc. | Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates |
| US6833329B1 (en) * | 2000-06-22 | 2004-12-21 | Micron Technology, Inc. | Methods of forming oxide regions over semiconductor substrates |
| US6649543B1 (en) | 2000-06-22 | 2003-11-18 | Micron Technology, Inc. | Methods of forming silicon nitride, methods of forming transistor devices, and transistor devices |
| US6660657B1 (en) | 2000-08-07 | 2003-12-09 | Micron Technology, Inc. | Methods of incorporating nitrogen into silicon-oxide-containing layers |
| US6383943B1 (en) * | 2000-10-16 | 2002-05-07 | Taiwan Semiconductor Manufacturing Company | Process for improving copper fill integrity |
| US6399401B1 (en) * | 2001-07-24 | 2002-06-04 | Advanced Micro Devices, In. | Test structures for electrical linewidth measurement and processes for their formation |
| US6878585B2 (en) | 2001-08-29 | 2005-04-12 | Micron Technology, Inc. | Methods of forming capacitors |
| US6723599B2 (en) * | 2001-12-03 | 2004-04-20 | Micron Technology, Inc. | Methods of forming capacitors and methods of forming capacitor dielectric layers |
| KR100543655B1 (ko) * | 2003-06-30 | 2006-01-20 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
| CN104465519B (zh) * | 2013-09-23 | 2017-07-28 | 中芯国际集成电路制造(上海)有限公司 | 嵌入式源/漏mos晶体管的制造方法 |
| DE102021106691A1 (de) * | 2021-03-18 | 2022-09-22 | Infineon Technologies Austria Ag | Verfahren zum herstellen einer halbleitervorrichtung und halbleitervorrichtung |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2786071B2 (ja) * | 1993-02-17 | 1998-08-13 | 日本電気株式会社 | 半導体装置の製造方法 |
| US5392189A (en) * | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
| US5381302A (en) | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
| JPH0714993A (ja) * | 1993-06-18 | 1995-01-17 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| JPH0794600A (ja) * | 1993-06-29 | 1995-04-07 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
| US5504041A (en) | 1994-08-01 | 1996-04-02 | Texas Instruments Incorporated | Conductive exotic-nitride barrier layer for high-dielectric-constant materials |
| KR0168346B1 (ko) * | 1994-12-29 | 1998-12-15 | 김광호 | 고유전율 재료를 이용한 커패시터 및 그 제조방법 |
| US5612574A (en) | 1995-06-06 | 1997-03-18 | Texas Instruments Incorporated | Semiconductor structures using high-dielectric-constant materials and an adhesion layer |
| US5786248A (en) * | 1995-10-12 | 1998-07-28 | Micron Technology, Inc. | Semiconductor processing method of forming a tantalum oxide containing capacitor |
| KR100285066B1 (ko) * | 1997-12-06 | 2001-04-02 | 윤종용 | 고유전체 물질을 갖는 커패시터의 형성방법 |
| US6037235A (en) * | 1998-09-14 | 2000-03-14 | Applied Materials, Inc. | Hydrogen anneal for curing defects of silicon/nitride interfaces of semiconductor devices |
-
1997
- 1997-12-19 US US08/994,275 patent/US6228701B1/en not_active Expired - Lifetime
-
1998
- 1998-12-16 CN CNB981255590A patent/CN1167118C/zh not_active Expired - Lifetime
- 1998-12-17 JP JP10359305A patent/JPH11261031A/ja active Pending
- 1998-12-18 EP EP98310441A patent/EP0926717B1/en not_active Expired - Lifetime
- 1998-12-18 DE DE69841923T patent/DE69841923D1/de not_active Expired - Lifetime
- 1998-12-19 KR KR1019980056378A patent/KR100596832B1/ko not_active Expired - Fee Related
- 1998-12-23 TW TW087121177A patent/TW406408B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP0926717A3 (en) | 2003-04-02 |
| KR100596832B1 (ko) | 2006-11-30 |
| KR19990063238A (ko) | 1999-07-26 |
| CN1225506A (zh) | 1999-08-11 |
| EP0926717B1 (en) | 2010-10-06 |
| US6228701B1 (en) | 2001-05-08 |
| JPH11261031A (ja) | 1999-09-24 |
| DE69841923D1 (de) | 2010-11-18 |
| TW406408B (en) | 2000-09-21 |
| EP0926717A2 (en) | 1999-06-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: INFINEON TECHNOLOGIES AG; INTERNATIONAL BUSINESS Free format text: FORMER OWNER: SIEMENS AG; INTERNATIONAL BUSINESS MACHINE CORP. Effective date: 20080704 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20080704 Address after: Munich, Germany Co-patentee after: International Business Machines Corp. Patentee after: QIMONDA AG Address before: Munich, Federal Republic of Germany Co-patentee before: International Business Machines Corp. Patentee before: Siemens AG |
|
| CX01 | Expiry of patent term |
Granted publication date: 20040915 |
|
| CX01 | Expiry of patent term |