CN116706692A - Linear array semiconductor laser - Google Patents
Linear array semiconductor laser Download PDFInfo
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- CN116706692A CN116706692A CN202310951715.4A CN202310951715A CN116706692A CN 116706692 A CN116706692 A CN 116706692A CN 202310951715 A CN202310951715 A CN 202310951715A CN 116706692 A CN116706692 A CN 116706692A
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- linear array
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- array semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 239000012530 fluid Substances 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 9
- 239000003507 refrigerant Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- FQHIEHYBVTXFES-UHFFFAOYSA-N [W].[Cu].[Sn].[Au] Chemical compound [W].[Cu].[Sn].[Au] FQHIEHYBVTXFES-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The application provides a linear array semiconductor laser. In operation, the linear array semiconductor laser has a light emitting side capable of exciting a horizontal straight line light spot, and the linear array semiconductor laser comprises: a plurality of bar units; the DCB plate is provided with a plurality of conductive areas, the plurality of conductive areas are arranged along the extending direction of the DCB plate, the conductive areas are provided with connecting areas and mounting areas, the plurality of bar units are arranged on the plurality of mounting areas in a one-to-one correspondence manner, the front cavity surface of each bar unit is flush with the edge of the mounting area, so that the plurality of bar units are arranged on the same horizontal straight line, the plurality of bar units are arranged along the extending direction of the DCB plate, and the bar units of the conductive areas are connected with the connecting areas of the next conductive areas through wires, so that the plurality of bar units on the DCB plate are connected in series; the side of the DCB plate away from the bar unit is connected with a first heat sink. The application solves the problem of poor facula quality of the linear array semiconductor laser in the prior art, and has the advantages of convenient and simple encapsulation.
Description
Technical Field
The application relates to the technical field of laser devices, in particular to a linear array semiconductor laser.
Background
Along with the development of laser equipment, the application of a laser is gradually increased, the structure of the conventional horizontal linear array laser is complex at present, the bar needs to be packaged on a micro-channel, then the micro-channel with the bar is assembled on a water through base, more parts are required in the assembling process, the mechanical structural part is required to be smooth and extremely high, the bar is easy to be caused to be not on the same straight line, and the quality of light spots is poor. Namely, the spot quality of the linear array semiconductor laser in the prior art needs to be further improved.
Disclosure of Invention
The application mainly aims to provide a linear array semiconductor laser to solve the problem of poor facula quality of the linear array semiconductor laser in the prior art.
In order to achieve the above object, according to one aspect of the present application, there is provided a linear array semiconductor laser having a light emitting side, the linear array semiconductor laser including: a plurality of bar units; the DCB board is provided with a plurality of conductive areas, the plurality of conductive areas are arranged along the extending direction of the DCB board, the conductive areas are provided with connecting areas and mounting areas, a plurality of bar units are arranged on the plurality of mounting areas in a one-to-one correspondence manner, at least the front cavity surfaces of the bar units close to the light emitting side are flush with the edges of the mounting areas, so that the bar units are arranged on the same horizontal straight line, the bar units are arranged along the extending direction of the DCB board, and the bar units of the conductive areas are connected with the connecting areas of the next conductive areas through wires so as to connect the bar units on the DCB board in series; and one side of the DCB plate, which is far away from the bar unit, is connected with the first heat sink.
Further, the edges of the mounting area are flush with the circumferential sides of the bar unit.
Further, the bar unit includes: a bar; the bar is arranged on the second heat sink, and at least the front cavity surface of the bar, which is close to the light emitting side, is flush with the side wall of the second heat sink.
Further, the sides of the bars perpendicular to the extending direction of the DCB plate are flush with the side walls of the second heat sink.
Further, the spacing between adjacent two conductive regions is the same.
Further, the conductive area is in a Z-shaped structure, and the mounting area is close to the light emitting side relative to the connecting area.
Further, the connection area comprises a transition section and a connection section, two ends of the transition section are respectively connected with the installation area and the connection section, the connection section and the connection area are extended out in a back-to-back mode, and the transition section is perpendicular to the connection section and the installation area.
Further, the mounting regions of the conductive areas and the connection regions of the next conductive area are arranged in a direction perpendicular to the extending direction of the DCB plate.
Further, the linear array semiconductor laser further includes: the positive electrode wiring piece is connected with a conductive area at one end of the DCB board; the negative electrode wiring piece is connected with the conductive area at the other end of the DCB plate, the connecting line direction of the positive electrode wiring piece and the negative electrode wiring piece is the same as the extending direction of the DCB plate, and the plurality of bar units are positioned between the positive electrode wiring piece and the negative electrode wiring piece.
Further, the linear array semiconductor laser further comprises a protection plate made of insulating materials, and at least one part of the protection plate is covered on the positive electrode wiring piece and the negative electrode wiring piece and is arranged at intervals with the bar unit.
Further, at least another part of the protection plate is positioned at one side of the bar unit away from the light emitting side and is abutted with the DCB plate.
Further, the cooling channel is arranged in the first heat sink, the fluid inlet and the fluid outlet are communicated with the cooling channel, the fluid inlet and the fluid outlet are positioned on the surface of one side of the first heat sink, which is far away from the DCB plate, and the refrigerant flows into the cooling channel through the fluid inlet and flows out through the fluid outlet after heat exchange.
Further, the linear array semiconductor laser further comprises a plurality of focusing lenses, the plurality of focusing lenses are in one-to-one correspondence with the plurality of bar units, and the focusing lenses are close to the light emitting side relative to the bar units.
By applying the technical scheme of the application, the linear array semiconductor laser is provided with a light emitting side, the linear array semiconductor laser comprises a plurality of bar units, a DCB board and a first heat sink, the DCB board is provided with a plurality of conductive areas, the plurality of conductive areas are arranged along the extending direction of the DCB board, the conductive areas are provided with connecting areas and mounting areas, the plurality of bar units are arranged on the plurality of mounting areas in a one-to-one correspondence manner, at least the front cavity surfaces of the bar units close to the light emitting side are flush with the edges of the mounting areas, so that the plurality of bar units are arranged on the same straight line, the plurality of bar units are arranged along the extending direction of the DCB board, and the bar units of the conductive areas are connected with the connecting areas of the next conductive areas through wires, so that the plurality of bar units on the DCB board are connected in series; the side of the DCB plate away from the bar unit is connected with a first heat sink.
By providing a plurality of conductive areas on the DCB board, and dividing the conductive areas into a mounting area where the bar units are mounted and a connection area for connecting the bar units in series. The front cavity surface of the bar unit close to the light emitting side is flush with the edge of the mounting area, so that all the bar units are arranged on the same horizontal straight line, light spots generated by the linear array semiconductor laser are on the same straight line, and the light spot quality of the linear array semiconductor laser is effectively improved. In addition, the structure of the application can connect each bar unit with the adjacent bar unit in series by only arranging a group of wires on each bar unit, thereby effectively reducing the packaging difficulty of the linear array semiconductor laser and improving the packaging consistency of the linear array semiconductor laser. The DCB plate can be cooled by being mounted on the first heat sink, so that stable operation of the bar unit is facilitated.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application. In the drawings:
FIG. 1 shows a schematic view of an angle configuration of a linear array semiconductor laser according to an alternative embodiment of the present application;
FIG. 2 shows a schematic view of the structure of the line semiconductor laser of FIG. 1 at another angle;
FIG. 3 is a schematic view showing the positional relationship between the fixing member and the positive and negative electrode connection members in FIG. 1;
fig. 4 shows a schematic view of the positional relationship among the focusing lens, the support, and the bar unit in fig. 1;
FIG. 5 shows a schematic diagram of the relationship between the bar unit and the DCB plate of FIG. 4;
fig. 6 shows a schematic view of another angle of the linear semiconductor laser of fig. 1.
Wherein the above figures include the following reference numerals:
10. a bar unit; 11. a bar; 12. a second heat sink; 20. DCB plates; 30. a conductive region; 31. a connection region; 311. a transition section; 312. a connection section; 32. a mounting area; 40. a first heat sink; 41. a fluid inlet; 42. a fluid outlet; 43. a fixing groove; 50. a positive electrode wiring member; 51. a positive electrode wiring hole; 52. a positive electrode fixing hole; 60. a negative electrode wiring member; 61. a negative electrode wiring hole; 62. a negative electrode fixing hole; 70. a protective plate; 80. a focusing lens; 90. a wire; 100. a fixing member; 110. a light outlet; 120. and a support.
Detailed Description
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
It is noted that all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless otherwise indicated.
In the present application, unless otherwise indicated, terms of orientation such as "upper, lower, top, bottom" are used generally with respect to the orientation shown in the drawings or with respect to the component itself in the vertical, upright or gravitational direction; also, for ease of understanding and description, "inner and outer" refers to inner and outer relative to the profile of each component itself, but the above-mentioned orientation terms are not intended to limit the present application.
The application provides a linear array semiconductor laser, which aims to solve the problem of poor light spot quality of the linear array semiconductor laser in the prior art.
As shown in fig. 1 to 6, the linear array semiconductor laser has a light emitting side, the linear array semiconductor laser includes a plurality of bar units 10, a DCB board 20 and a first heat sink 40, the DCB board 20 has a plurality of conductive areas 30, the plurality of conductive areas 30 are arranged along an extending direction of the DCB board 20, the conductive areas 30 have a connection area 31 and a mounting area 32, the plurality of bar units 10 are arranged on the plurality of mounting areas 32 one by one, at least a front cavity surface of the bar unit 10 near the light emitting side is flush with an edge of the mounting area 32 so that the plurality of bar units 10 are arranged on the same line, the plurality of bar units 10 are arranged along the extending direction of the DCB board 20, and the connection area 31 of the conductive area 30 and a next conductive area 30 are connected by a wire 90 so that the plurality of bar units 10 on the DCB board 20 are connected in series; the side of the DCB plate 20 remote from the bar unit 10 is connected to a first heat sink 40.
By providing a plurality of conductive areas 30 on the DCB plate 20, and dividing the conductive areas 30 into a mounting area 32 where the bar units 10 are mounted and a connection area 31 for connecting the bar units 10 in series. The front cavity surface of the bar unit 10 close to the light emitting side is flush with the edge of the mounting area 32, so that all the bar units 10 are arranged on the same horizontal straight line, light spots generated by the linear array semiconductor laser are on the same straight line, and the light spot quality of the linear array semiconductor laser is effectively improved. In addition, the structure of the application can connect the bar units 10 with the adjacent bar units 10 in series only by arranging a group of wires 90 on each bar unit 10, thereby effectively reducing the packaging difficulty of the linear array semiconductor laser and improving the packaging consistency of the linear array semiconductor laser. The DCB plate 20 can be cooled by mounting the DCB plate 20 to the first heat sink 40, which is advantageous for the stable operation of the bar unit 10.
It should be noted that, in the present application, the linear array semiconductor laser is typically placed on a horizontal table for use, and all the bar units 10 are aligned on the same horizontal line. If the linear array semiconductor laser is placed on a vertical table for use, all bar units 10 are aligned on the same vertical straight line at this time.
The linear array semiconductor laser refers to semiconductor lasers with linear array of bar units.
Further, the connection region 31 of the next conductive region 30 and the bar unit 10 of the conductive region 30 are connected by the wire 90, which means that the upstream and downstream of the linear array semiconductor laser are divided in accordance with the connection direction of the bar unit 10 and the connection region 31, not the flow direction of the current. Alternatively, the bar units 10 are sequentially connected to the connection regions 31 of the conductive regions 30 at downstream positions along a certain direction by the wires 90.
It should be noted that, in order to fully utilize the positions on the DCB board 20 and to reduce the size of the linear array semiconductor laser, the positions at the two ends of the DCB board 20 are not two complete conductive regions 30, but are a part of the conductive regions 30, and the sizes of the conductive regions are slightly different from those of the conductive regions 30 at the middle position, of course, the conductive regions 30 at one end of the conductive regions 30 at the two ends have no mounting regions 32, but only the connection regions 31, and only the connection function of the bar units 10 in the last conductive region 30 is performed, and the positive electrode wire member 50 and the negative electrode wire member 60 are respectively disposed on the conductive regions 30 at the two ends, so that the bar units 10 in the whole DCB board are connected in series.
Specifically, the DCB plate 20 is a ceramic-based copper-clad plate.
Specifically, the surface of the DCB plate 20 has been etched with a circuit pattern and the surface is gold plated, that is, a plurality of conductive regions 30 are formed, and the surface of the conductive regions 30 is gold.
Specifically, the spacing between adjacent two conductive regions 30 is the same. The distance between two adjacent bar units 10 is more uniform, so that the uniformity of the light beam generated by the linear array semiconductor laser is better, the occurrence of a bright and dark area of light spots is reduced, and the quality of the light spots generated by the linear array semiconductor laser is effectively improved.
In the particular embodiment shown in fig. 5, the edges of the mounting region 32 are flush with the circumferential side wall of the bar unit 10. That is to say the area of the mounting region 32 is the same as the cross-sectional area of the bar unit 10, while the circumferential side walls of the bar unit 10 are flush with the edges of the mounting region 32 when the bar unit 10 is assembled to the mounting region 32, it is advantageous to control the spacing between two adjacent bar units 10. Alternatively, the arrangement is such that the distance between two adjacent bar units 10 is the distance between two adjacent mounting areas 32.
As shown in fig. 5, the bar unit 10 includes a bar 11 and a second heat sink 12, the bar 11 is disposed on the second heat sink 12, and at least a front cavity surface of the bar 11 near the light emitting side is flush with a side wall of the second heat sink 12. Not all structures in the bar unit 10 can emit light, only the bar 11 in the bar unit 10 emits light, and the bar 11 is arranged on the second heat sink 12, so that the bar 11 is not only mounted on the DCB board 20, but also the second heat sink 12 can cool the bar 11, so that the stability of the operation of the bar 11 is ensured, and the service time of the bar 11 is prolonged. The front cavity surface of the bar 11 close to the light emitting side is flush with the side wall of the second heat sink 12, and after each bar unit 10 is assembled on the DCB board 20, all bars 11 are on the same horizontal line, so that the accuracy of emergent light spots of the linear array semiconductor laser is further improved.
The bar 11 has a laser chip therein, or the bar 11 is a bar chip.
Specifically, the second heat sink 12 is a gold tin tungsten copper heat sink, and the Jin Xihan material is packaged to be beneficial to improving the reliability of the product.
Preferably, only one bar 11 is provided on one second heat sink 12, and after the bar 11 is damaged, only the entire bar unit 10 needs to be replaced, so that the influence on other bars 11 is reduced.
Specifically, the sides of the bars 11 perpendicular to the extending direction of the DCB plate 20 are flush with the side walls of the second heat sink 12. The arrangement is such that the spacing between two adjacent bars 11 is the same, i.e. the distance between two adjacent conductive areas 30, further improving the uniformity of the light spot.
It should be noted that, in order to avoid the situation of electrical connection between the two adjacent conductive areas 30, the distance between the two adjacent conductive areas 30 needs to be set to be greater than 0.5 mm, and on this basis, the smaller the gap between the conductive areas 30, the higher the uniformity of the light spot, the distance between the two adjacent conductive areas 30 is not particularly limited, and only the distance between the two adjacent conductive areas 30 needs to be ensured to be greater than 0.5 mm.
In the embodiment shown in fig. 5, the conductive area 30 has a Z-shaped structure, and the mounting area 32 is close to the light emitting side with respect to the connection area 31. The conductive areas 30 are arranged in a Z-shaped structure, which is beneficial for connecting the bar unit 10 with the connecting area 31 of the next conductive area 30, reduces the use of wires 90 and is beneficial for product packaging.
In the embodiment shown in fig. 5, the connection area 31 includes a transition section 311 and a connection section 312, two ends of the transition section 311 are respectively connected with the installation area 32 and the connection section 312, the connection section 312 extends opposite to the connection area 31, and the transition section 311 is perpendicular to both the connection section 312 and the installation area 32. The installation area 32 is rectangular area, and changeover portion 311 is rectangular area too, and two rectangular areas pass through linkage segment 312 and connect, and two rectangular areas stretch out to the direction of being opposite to each other, make the distance between the installation area 32 of electrically conductive district 30 and the linkage area 31 of next electrically conductive district 30 nearer, be favorable to wire 90 and bar unit 10 and the linkage area 31 of next electrically conductive district 30 to be connected, reduced wire 90 and connected the degree of difficulty, still reduced the degree of difficulty of product encapsulation simultaneously.
It should be noted that, the wire 90 is a gold wire, the uniformity of the gold wire bonding spot is better, and the packaging process of the product is optimized by etching the circuit diagram of the DCB board 20 and bonding the gold wire.
In the embodiment shown in fig. 5, the mounting region 32 of the conductive region 30 and the connection region 31 of the next conductive region 30 are arranged in a direction perpendicular to the extending direction of the DCB plate 20.
In the specific embodiment shown in fig. 3, the linear array semiconductor laser further includes a positive electrode wire member 50 and a negative electrode wire member 60, and the positive electrode wire member 50 is connected to the conductive region 30 at one end of the DCB plate 20; the negative electrode tab member 60 is connected to the conductive region 30 at the other end of the DCB plate 20, and the connection direction of the positive electrode tab member 50 and the negative electrode tab member 60 is the same as the extending direction of the DCB plate 20, and the plurality of bar units 10 are located between the positive electrode tab member 50 and the negative electrode tab member 60. The positive electrode tab 50 and the negative electrode tab 60 each have a conductive function, the positive electrode tab 50 and the negative electrode tab 60 are assembled to the conductive area 30 at the end of the DCB plate 20 so that the positive electrode tab 50 and the negative electrode tab 60 can be electrically connected to the DCB plate 20, the plurality of bar units 10 are disposed between the positive electrode tab 50 and the negative electrode tab 60, and after the positive electrode tab 50 and the negative electrode tab 60 are electrically connected, the current flows into the DCB plate 20 from the positive electrode tab 50, sequentially passes through the plurality of bar units 10 and flows into the negative electrode tab 60.
In the embodiment shown in fig. 3, the positive electrode connection member 50 has a positive electrode connection hole 51 and a positive electrode fixing hole 52, the depth direction of the positive electrode connection hole 51 is perpendicular to the depth direction of the positive electrode fixing hole 52, the positive electrode connection hole 51 is communicated with the positive electrode fixing hole 52, the positive electrode power line penetrates into the positive electrode connection hole 51, and the fixing member 100 abuts against the positive electrode power line after penetrating through the positive electrode fixing hole 52, so as to fix the positive electrode power line in the positive electrode connection hole 51.
In the embodiment shown in fig. 3, the negative electrode connection member 60 has a negative electrode connection hole 61 and a negative electrode fixing hole 62, the depth direction of the negative electrode connection hole 61 is perpendicular to the depth direction of the negative electrode fixing hole 62, the negative electrode connection hole 61 is communicated with the negative electrode fixing hole 62, and a negative electrode power line penetrates into the negative electrode connection hole 61, and the fixing member 100 abuts against the negative electrode power line after passing through the negative electrode fixing hole 62, so as to fix the negative electrode power line in the negative electrode connection hole 61.
As shown in fig. 1, the linear array semiconductor laser further includes a protection plate 70 made of an insulating material, at least a portion of the protection plate 70 being disposed to cover the positive electrode wire member 50 and the negative electrode wire member 60 and spaced apart from the bar unit 10. The arrangement of the protection plate 70 protects the bar unit 10, so that the external contact to the bar unit 10 and the lead 90 can be reduced, the external environment pollution to the bar 11 is reduced, and the damage risk of the bar unit 10 is reduced.
Preferably, the fixing member 100 fixes the protection plate 70 to the positive electrode tab member 50 and the negative electrode tab member 60, and the fixing member 100 may also extend into the positive electrode tab hole 51 or the negative electrode tab hole 61 to fix the positive electrode power line or the negative electrode power line.
In the particular embodiment shown in fig. 2, at least another portion of the protective plate 70 is located on the side of the bar unit 10 remote from the light exit side and abuts the DCB plate 20. The protective plate 70 protects the DCB plate 20 in multiple directions, effectively reducing the risk of damage to the bar unit 10.
Meanwhile, the protection plate 70 is matched with the first heat sink 40, so that the linear array semiconductor laser is provided with only one light outlet 110, and light rays are favorably emitted from the light outlet 110.
As shown in fig. 6, the first heat sink 40 has a cooling channel, and a fluid inlet 41 and a fluid outlet 42 which are in communication with the cooling channel, wherein the fluid inlet 41 and the fluid outlet 42 are positioned on a surface of the first heat sink 40, which is far away from the DCB plate 20, and the refrigerant flows into the cooling channel through the fluid inlet 41, exchanges heat, and flows out through the fluid outlet 42. The first heat sink 40 in the application adopts fluid to cool down, so that the bar 11 can be cooled better, and the power and reliability of the product are improved.
In the embodiment shown in fig. 2, the first heat sink 40 is provided with fixing grooves 43 at both ends in the extending direction, which is advantageous for fixing the linear array semiconductor laser.
Preferably, the first heat sink 40 is a water-passing heat sink.
In the embodiment shown in fig. 1, the linear array semiconductor laser further includes a plurality of focusing lenses 80, where the plurality of focusing lenses 80 are in one-to-one correspondence with the plurality of bar units 10, and the focusing lenses 80 are located near the light emitting side with respect to the bar units 10. This arrangement facilitates collimation of the light emitted by the bar element 10 and facilitates obtaining a high energy density linear spot.
In the embodiment shown in fig. 4, the linear array semiconductor laser further includes a plurality of supporting members 120, the plurality of supporting members 120 are disposed with the plurality of focusing lenses 80, the focusing lenses 80 are disposed on the supporting members 120, and the thickness of the supporting members 120 is the same as that of the second heat sink 12, so that the focusing lenses 80 correspond to the bars 11.
From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:
the serial encapsulation structure is realized by designing the unique DCB board 20 and the gold wire connecting circuit, and has the advantages of light weight, good light spot quality, good long-term reliability, simplified process compared with the conventional horizontal linear array technology and high encapsulation efficiency; and the light spot is collimated into a straight line by a lens, so that a high-energy-density linear light spot can be generated.
It will be apparent that the embodiments described above are merely some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present application without making any inventive effort, shall fall within the scope of the present application.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the application described herein may be implemented in sequences other than those illustrated or otherwise described herein.
The above description is only of the preferred embodiments of the present application and is not intended to limit the present application, but various modifications and variations can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (13)
1. A linear array semiconductor laser, the linear array semiconductor laser having a light-emitting side, the linear array semiconductor laser comprising:
a plurality of bar units (10);
a DCB plate (20), the DCB plate (20) having a plurality of conductive areas (30), the plurality of conductive areas (30) being arranged along an extending direction of the DCB plate (20), the conductive areas (30) having connection areas (31) and mounting areas (32), the plurality of bar units (10) being arranged on the plurality of mounting areas (32) one by one, at least a front cavity surface of the bar unit (10) near the light exit side being flush with an edge of the mounting area (32) so that the plurality of bar units (10) are arranged on the same horizontal line, the plurality of bar units (10) being arranged at intervals along the extending direction of the DCB plate (20), the bar units (10) of the conductive areas (30) being connected with the connection areas (31) of the next conductive area (30) by wires (90) so that the plurality of bar units (10) on the DCB plate (20) are connected in series;
a first heat sink (40), the side of the DCB plate (20) away from the bar unit (10) being connected with the first heat sink (40).
2. The linear array semiconductor laser according to claim 1, characterized in that the edge of the mounting area (32) is flush with the circumferential side of the bar unit (10).
3. The linear array semiconductor laser according to claim 1, characterized in that the bar unit (10) comprises:
a bar (11);
and the bar (11) is arranged on the second heat sink (12), and at least the front cavity surface of the bar (11) close to the light emergent side is flush with the side wall of the second heat sink (12).
4. A linear array semiconductor laser according to claim 3, characterized in that the side of the bar (11) perpendicular to the extension direction of the DCB plate (20) is flush with the side wall of the second heat sink (12).
5. The linear array semiconductor laser according to claim 1, characterized in that the spacing between adjacent two of the conductive regions (30) is the same.
6. The linear array semiconductor laser according to claim 1, characterized in that the conductive region (30) has a Z-shaped structure, and the mounting region (32) is close to the light exit side with respect to the connection region (31).
7. The linear array semiconductor laser according to claim 6, wherein the connection region (31) includes a transition section (311) and a connection section (312), both ends of the transition section (311) are respectively connected with the mounting region (32) and the connection section (312), the connection section (312) extends away from the connection region (31), and the transition section (311) is perpendicular to both the connection section (312) and the mounting region (32).
8. The linear array semiconductor laser according to claim 1, characterized in that the mounting region (32) of the conductive region (30) and the connection region (31) of the next conductive region (30) are arranged in a direction perpendicular to the extension direction of the DCB plate (20).
9. The linear array semiconductor laser of claim 1, further comprising:
a positive electrode wire member (50), the positive electrode wire member (50) being connected to the conductive region (30) at one end of the DCB plate (20);
the negative electrode wiring piece (60), the negative electrode wiring piece (60) with electrically conductive district (30) of DCB board (20) other end is connected, just anodal wiring piece (50) with the direction of connection of negative electrode wiring piece (60) is the same with the extending direction of DCB board (20), a plurality of bar unit (10) are located anodal wiring piece (50) with between negative electrode wiring piece (60).
10. The linear array semiconductor laser according to claim 9, further comprising a protection plate (70), at least a portion of the protection plate (70) being provided over the positive electrode wire member (50) and the negative electrode wire member (60) and being provided at a distance from the bar unit (10).
11. The linear array semiconductor laser according to claim 10, characterized in that at least another portion of the protection plate (70) is located at a side of the bar unit (10) remote from the light exit side and abuts against the DCB plate (20).
12. The linear array semiconductor laser according to any one of claims 1 to 11, wherein the first heat sink (40) has a cooling channel inside, a fluid inlet (41) and a fluid outlet (42) which are in communication with the cooling channel, the fluid inlet (41) and the fluid outlet (42) are located on a surface of the first heat sink (40) on a side away from the DCB plate (20), and a refrigerant flows into the cooling channel through the fluid inlet (41) and flows out through the fluid outlet (42) after heat exchange.
13. The linear array semiconductor laser according to any one of claims 1 to 11, characterized in that the linear array semiconductor laser further comprises a plurality of focusing lenses (80), a plurality of the focusing lenses (80) being in one-to-one correspondence with a plurality of the bar units (10), the focusing lenses (80) being close to the light exit side with respect to the bar units (10).
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| US5212707A (en) * | 1991-12-06 | 1993-05-18 | Mcdonnell Douglas Corporation | Array of diffraction limited lasers and method of aligning same |
| EP0590232A1 (en) * | 1992-09-28 | 1994-04-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser array and mounting method |
| US5495490A (en) * | 1995-02-28 | 1996-02-27 | Mcdonnell Douglas Corporation | Immersion method and apparatus for cooling a semiconductor laser device |
| CN101841127A (en) * | 2010-06-11 | 2010-09-22 | 西安炬光科技有限公司 | Horizontal-array high-power semiconductor laser capable of replacing chip |
| CN102237636A (en) * | 2010-04-26 | 2011-11-09 | 无锡亮源激光技术有限公司 | Multi-tube serial semiconductor laser module and manufacturing method thereof |
| CN103311798A (en) * | 2012-03-16 | 2013-09-18 | 山东浪潮华光光电子股份有限公司 | Packaging structure and packaging method of large-power linear array laser device |
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| US5212707A (en) * | 1991-12-06 | 1993-05-18 | Mcdonnell Douglas Corporation | Array of diffraction limited lasers and method of aligning same |
| EP0590232A1 (en) * | 1992-09-28 | 1994-04-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor laser array and mounting method |
| US5495490A (en) * | 1995-02-28 | 1996-02-27 | Mcdonnell Douglas Corporation | Immersion method and apparatus for cooling a semiconductor laser device |
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