CN218569491U - Laser module, semiconductor laser array packaging assembly and semiconductor laser - Google Patents

Abstract

The application discloses laser module, semiconductor laser array encapsulation subassembly and semiconductor laser, wherein, this laser module includes: a substrate; the positive conductor layer and the negative conductor layer are arranged on the substrate at intervals; the laser chip is arranged on the anode conductor layer; and one end of the gold wire is connected to the laser chip, and the other end of the gold wire is connected to the cathode conductor layer. Through the mode, the laser modules in the laser module packaging and arranging device are simple in structure, easy to assemble, easy for batch production and testing, and convenient for follow-up high-power array packaging and arranging of the laser modules, so that semiconductor lasers with high power density and high reliability can be produced in batches.

Description

Laser module, semiconductor laser array packaging assembly and semiconductor laser

Technical Field

The application relates to the technical field of semiconductor laser, in particular to a laser module, a semiconductor laser array packaging assembly and a semiconductor laser.

Background

With the wide application of high-power semiconductor lasers in many fields such as additive manufacturing, metal welding, cutting and the like, the market demand for high-power semiconductor lasers is also rising year by year.

However, the high-power semiconductor laser in the current market generally has the problems of high cost, low reliability, complex process and the like.

SUMMERY OF THE UTILITY MODEL

The application provides a laser module, semiconductor laser array encapsulation subassembly and semiconductor laser to can solve the high-power semiconductor laser ubiquitous problem with high costs among the prior art, the reliability is low, the technology is complicated.

In order to solve the technical problem, the application adopts a technical scheme that: there is provided a laser module, wherein the laser module comprises: a substrate; the positive conductor layer and the negative conductor layer are arranged on the substrate at intervals; the laser chip is arranged on the anode conductor layer; and one end of the gold wire is connected to the laser chip, and the other end of the gold wire is connected to the cathode conductor layer.

And one side edge of the laser chip, which is far away from the cathode conductor layer, is flush with one side edge of the substrate.

The length of the positive conductor layer in the first direction is greater than that of the laser chip in the first direction, and the length of the positive conductor layer in the second direction is greater than or equal to twice the length of the laser chip in the second direction; the first direction is perpendicular to the edge of one side of the laser chip far away from the cathode conductor layer, and the second direction is perpendicular to the first direction.

In order to solve the above technical problem, the present application adopts another technical solution: provided is a semiconductor laser array package assembly, wherein the semiconductor laser array package assembly comprises: a plurality of laser modules; the heat sink is provided with a plurality of step-shaped steps, and each step is provided with at least one laser module; wherein the laser module is a laser module as described above.

Wherein, semiconductor laser array encapsulation subassembly still includes anodal leading-in connecting piece, leading-in connecting piece of negative pole and first connection gold thread, the one end of anodal leading-in connecting piece is used for connecting external power source's positive pole, the anodal conductor layer of the first laser module that is close to anodal leading-in connecting piece in a plurality of laser modules is connected to its other end, the one end of the leading-in connecting piece of negative pole is used for the negative pole of connecting power source, the negative conductor layer of the second laser module that is close to the leading-in connecting piece of negative pole in a plurality of laser modules is connected to its other end, and connect gradually the anodal conductor layer of one in every two adjacent laser modules and another negative conductor layer through first connection gold thread, in order to realize anodal leading-in connecting piece, the series connection between leading-in connecting piece of negative pole and each laser module.

Wherein, the semiconductor laser array packaging component further comprises a second connecting gold thread and a third connecting gold thread, one end of the second connecting gold thread is connected with the positive electrode leading-in connecting piece, the other end of the second connecting gold thread is connected with the positive electrode conductor layer of the first laser module, one end of the third connecting gold thread is connected with the negative electrode leading-in connecting piece, and the other end of the third connecting gold thread is connected with the negative electrode conductor layer of the second laser module.

The positive electrode lead-in connecting piece comprises a first positive electrode lead-in connecting piece and a second positive electrode lead-in connecting piece, wherein the first positive electrode lead-in connecting piece and the second positive electrode lead-in connecting piece are respectively connected to two opposite ends of a step where the first laser module is located and are arranged in an extending mode along a third direction; the third direction is the extending direction of the first laser module; the leading-in connecting piece of negative pole includes the leading-in connecting piece of first negative pole and the leading-in connecting piece of second negative pole, and the leading-in connecting piece of first negative pole and the leading-in connecting piece of second negative pole are connected respectively in the relative both ends of the step that the second laser module is located to all extend along the third direction and arrange.

The anode leading-in connecting piece comprises a first connecting part and a first extending part, wherein two opposite ends of the first connecting part are respectively connected with two opposite ends of an anode conductor layer of the first laser module; the fourth direction is vertical to the extending direction of the first laser module; the negative electrode leading-in connecting piece comprises a second connecting portion and a second extending portion, two opposite ends of the second connecting portion are connected with two opposite ends of a negative electrode conductor layer of the second laser module respectively, one end of the second extending portion is connected with one end of the second connecting portion, and the other end of the second extending portion extends in the fourth direction to enable the other end of the second extending portion and the other end of the first extending portion to be located on the same straight line.

Wherein, semiconductor laser array encapsulation subassembly still includes the encapsulation lid, and the encapsulation lid sets up the one side that deviates from a plurality of laser modules at heat sink, and the encapsulation is covered and still is equipped with feed liquor hole and goes out the liquid hole to mutually support with heat sink and form the heat dissipation channel, the heat dissipation channel corresponds with a plurality of step positions at least, is used for dispelling the heat to a plurality of laser modules.

In order to solve the above technical problem, the present application adopts another technical solution: provided is a semiconductor laser, wherein the semiconductor laser includes: the semiconductor laser array packaging assembly and the optical assembly array are used for shaping laser beams emitted by the laser modules; the semiconductor laser array packaging assembly is the semiconductor laser array packaging assembly.

The beneficial effect of this application is: be different from prior art, the anodal conductor layer and the negative conductor layer interval in the laser module that this application provided set up on its base plate, and laser chip further sets up on anodal conductor layer, and laser chip is connected to the one end of gold thread, and negative conductor layer is connected to its other end to make the corresponding laser module simple structure who obtains easily assemble, easily batch production test, also make things convenient for in follow-up carry out high power array package to a plurality of laser modules and arrange, thereby can mass production high power density, high reliability's semiconductor laser.

Drawings

FIG. 1 is a schematic diagram of the structure of one embodiment of a laser module of the present application;

fig. 2 is a schematic structural view of a first embodiment of the semiconductor laser array package assembly of the present application;

fig. 3 is a schematic structural view of a second embodiment of the semiconductor laser array package assembly of the present application;

fig. 4 is a back view of the semiconductor laser array package assembly of fig. 3;

fig. 5 is a schematic structural diagram of an embodiment of a semiconductor laser according to the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The terms "first", "second" and "third" in this application are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any indication of the number of technical features indicated. Thus, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of the feature. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless explicitly specifically limited otherwise. In the embodiment of the present application, all the directional indicators (such as upper, lower, left, right, front, and rear … …) are used only to explain the relative positional relationship between the components, the movement, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.

The present application will be described in detail with reference to the accompanying drawings and examples.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a laser module according to the present application. In this embodiment, the laser module 10 specifically includes: a substrate 11, a positive electrode conductor layer 12, a negative electrode conductor layer 13, a laser chip 14, and a gold wire 15.

Wherein, a laser module 10 that provides in this application specifically uses in semiconductor laser to constitute semiconductor laser array encapsulation subassembly with a plurality of laser modules 10 through adopting arbitrary reasonable array encapsulation arrangement mode, and cooperate with corresponding optical assembly array, in order to carry out laser beam's transmission.

Specifically, the positive conductor layer 12 and the negative conductor layer 13 are disposed on the substrate 11 at intervals to provide a certain degree of strength support by the substrate 11.

The laser chip 14 is further disposed on the positive conductor layer 12, and one end of the gold wire 15 is connected to the laser chip 14, and the other end thereof is connected to the negative conductor layer 13.

It can be understood that the positive electrode conductor layer 12 and the negative electrode conductor layer 13 can be respectively externally connected to a positive electrode and a negative electrode of a power supply, or the negative electrode conductor layer 13 and the positive electrode conductor layer 12 in other laser modules 10, so as to supply power to the laser chip 14 through the positive electrode conductor layer 12 and the negative electrode conductor layer 13, and thus the laser chip 14 can excite a corresponding laser beam.

Above-mentioned scheme, through setting up positive conductor layer 12 and negative conductor layer 13 interval on base plate 11, laser chip 14 further sets up on positive conductor layer 12, and laser chip 14 and negative conductor layer 13 are connected respectively to the relative both ends of gold thread 15, in order to make laser module 10, thereby make this laser module 10 simple structure easily assemble, easily batch production test, also make and carry out high power array package to a plurality of laser modules 10 in the follow-up, thereby can mass production high power density, the semiconductor laser of high reliability.

In an embodiment, the thickness of the substrate 11 is greater than the thickness of the positive conductive layer 12, and is designed in proportion, and it is specifically required to refer to the thermal expansion coefficient of the laser chip 14 disposed on the positive conductive layer 12, so that the closer the thermal expansion coefficient is, the better the thermal expansion coefficient is, which is not limited in the present application.

In an embodiment, the number of the gold wires 15 is multiple, and two opposite ends of the gold wires 15 are respectively arranged in an array to be bonded on the negative conductor layer 13 and the laser chip 14.

It can be understood that the higher the working power of the laser module 10 is, the more the number of the corresponding gold wires 15 included in the laser module is, so as to effectively reduce the safety risk of power supply by using the gold wires 15, that is, the number of the gold wires 15 in the laser module 10 and the number of the arrangement rows and columns of the plurality of gold wires 15 are specifically determined by the working power of the laser module 10, and the number of the gold wires 15 should match the current passed by the laser module 10 when the laser module 10 operates at the maximum power, which is not limited in the present application.

Further, in an embodiment, the thickness of the partial region of the substrate 11 corresponding to the positive conductor layer 12 is greater than the thickness of the partial region of the substrate 11 corresponding to the negative conductor layer 13, that is, the partial regions of the substrate 11 corresponding to the positive conductor layer 12 and the negative conductor layer 13 respectively form step-like steps with height differences, so that the positive conductor layer 12 and the negative conductor layer 13 arranged on the substrate 11 correspondingly form height differences, and further the wire arc height of the gold wire 15 for realizing the connection between the negative conductor layer 13 and the laser chip 14 can be reduced, so as to facilitate the uniform bonding of the gold wire 15, especially when the number of the gold wires 15 is large and the number of rows and columns arranged correspondingly is large, the height difference between the negative conductor layer 13 and the laser chip 14 is increased, and the gold wires 15 located in different rows and columns can be effectively prevented from affecting each other during bonding. In addition, the required total length of the gold wire 15 can be effectively reduced by reducing the wire loop height of the gold wire 15, so as to save the implementation cost.

In an embodiment, the thickness of the positive conductor layer 12 is greater than that of the negative conductor layer 13 to form a height difference, so that the wire loop height of the gold wire 15 for connecting the negative conductor layer 13 and the laser chip 14 can be reduced, thereby facilitating uniform bonding of the gold wire 15.

Optionally, the substrate 11 may be formed by splicing two split substrates 11 with different thicknesses and respectively formed with a conductor layer.

Alternatively, one side edge of the laser chip 14 away from the negative electrode conductor layer 13 is flush with one side edge of the substrate 11, or protrudes away from the negative electrode conductor layer 13 beyond one side edge of the substrate 11 as needed.

In an embodiment, the length of the positive conductor layer 12 in the first direction is greater than the length of the laser chip 14 in the first direction, so that it can ensure that the solder extruded from the laser chip 14 during bonding has enough space to extend, prevent the solder from accumulating to cause short circuit of the laser chip 14, and increase the conductive area of the positive conductor layer 12 to reduce the resistance.

The first direction is specifically perpendicular to one side edge of the laser chip 14 away from the negative electrode conductor layer 13.

Further, the length of the anode conductor layer 12 in the second direction is greater than or equal to twice the length of the laser chip 14 in the second direction, so that when the laser chip 14 is attached to a set position of the anode conductor layer 12, for example, at the middle position, the vacant areas corresponding to the two ends of the laser chip 14 on the anode conductor layer 12 can be used as circuit leading-out ports for the independent test of the laser module 10 and can also be used as circuit connection interfaces for realizing the connection with other laser modules 10, and the routing area of the vacant areas should meet the working requirements of products.

It can be appreciated that the laser module 10 operating in the low current mode can suitably reduce the length of the positive conductor layer 12 in the second direction; when the laser module 10 works in the high-power and high-current mode, it should be ensured that the length of the anode conductor layer 12 in the second direction is greater than or equal to twice the length of the laser chip 14 in the second direction, so as to increase the wire bonding area and prevent the gold wire from being fused when the laser module 10 works in the high-current mode for a long time.

The second direction is perpendicular to the first direction and corresponds to the extending direction of the positive electrode conductive layer 12.

In one embodiment, the laser module 10 further includes a solder sheet 16 or pre-plated solder, and the solder sheet 16 or pre-plated solder is specifically disposed between the positive conductor layer 12 and the laser chip 14 to enable reflow bonding of the laser chip 14 through the solder sheet 16 to solder the laser chip 14 to the positive conductor layer 12.

In an embodiment, a groove is formed on the positive conductor layer 12 at a position close to two opposite sides of the laser chip 14, one side edge of the groove far from the negative conductor layer 13 is flush with one side edge of the positive conductor layer 12 far from the negative conductor layer 13, and the depth of the groove is equal to the thickness of the positive conductor layer 12, so as to expose a portion of the substrate 11.

Optionally, the substrate 11 may specifically be a ceramic substrate 11, or any other reasonable insulating material plate with good heat dissipation performance, which is not limited in this application.

Alternatively, the positive conductor layer 12 and the negative conductor layer 13 may be specifically copper-clad layers formed on the substrate 11 at intervals, or other conductive material layers, which are not limited in this application.

Optionally, the laser chip 14 specifically includes a positive electrode surface and a negative electrode surface that are oppositely disposed, and specifically, the positive electrode surface is attached to the positive electrode conductor layer 12, and the negative electrode surface is connected to the negative electrode conductor layer 13 through a gold wire 15.

Alternatively, the gold wire is bonded to the laser chip 14 by ultrasonic thermocompression, in particular, to serve as a connection wire for current extraction.

Optionally, the gold wire is specifically a gold wire 15 with a diameter within 50 micrometers and a purity of 99.999%, and is connected to the laser chip 14 and the cathode conductor layer 13 by means of ball bonding, so that the connection portion is firm and stable.

Optionally, the substrate 11, the positive electrode conductive layer 12 and the negative electrode conductive layer 13 are specifically shaped like a long strip, that is, a rectangle, and are specifically made into the corresponding laser module 10 by using a bar-type modular packaging structure.

Optionally, the minimum spacing between the positive conductor layer 12 and the negative conductor layer 13 is greater than 0.5 mm to prevent the spacing from being too small, creating a short circuit risk.

Referring to fig. 2, fig. 2 is a schematic structural diagram of a semiconductor laser array package assembly according to a first embodiment of the present disclosure. In the present embodiment, the semiconductor laser array package assembly 20 includes: a plurality of laser modules 21 and a heat sink 22.

Specifically, a plurality of step-shaped steps 221 are formed on the heat sink 22, and at least one laser module 21 is respectively arranged on each step 221, so that a lower cost can be realized by adopting a step array packaging arrangement mode and matching with a special electric connection design scheme, and a heat dissipation scheme with higher reliability can be realized, thereby effectively reducing the manufacturing process difficulty and the manufacturing cost of the semiconductor laser integrated with the semiconductor laser array packaging assembly 20, and improving the reliability of the semiconductor laser integrated with the semiconductor laser array packaging assembly.

The laser module 21 is the laser module 10 as described above, and please refer to fig. 1 and related text, which are not described herein again.

In an embodiment, a side of the substrate in the laser module 21 facing away from the laser chip is further provided with a conductor layer, so that bonding with the step on the heat sink can be performed through the conductor layer.

Alternatively, the conductor layer and the heat sink may be made of the same material.

Further, in an embodiment, the semiconductor laser array package assembly 20 further includes a heat sink (not shown) disposed on the heat sink 22 and formed with a heat dissipation channel corresponding to at least the plurality of steps 221 for dissipating heat of the plurality of laser modules 21.

The heatsink 22 specifically includes a conductive stepped 221 heatsink 22 without a heat dissipation channel and a macro-or micro-channel stepped 221 heatsink 22.

It should be noted that the conventional high-power semiconductor laser usually employs a microchannel heat sink with high heat dissipation efficiency to mount a single high-power semiconductor laser chip into a unit module by eutectic soldering, and then a plurality of unit modules are overlapped and aligned in the vertical direction to form a vertical stacked array of the semiconductor laser, or aligned side by side in the horizontal direction to form a horizontal stacked array of the semiconductor laser for output.

The vertical stacked array of the semiconductor laser generally adopts microchannel water-cooled heat sinks for heat dissipation, the high-power microchannel water-cooled semiconductor laser has higher requirement on water quality, channels are easy to block in long-term work, the microchannel heat sink process is fine and complicated, the manufacturing cost is overhigh, the flow distribution is uneven when the number of stacked array units is too much, the stacked array is easy to deform, the assembly process is complicated and the like.

It can be understood that, in the present embodiment, the semiconductor laser array package assembly 20 is manufactured by using the ladder array package arrangement method and matching with the special electrical connection design scheme, and then the plurality of laser modules 21 can be sequentially arrayed on each ladder step 221 of the heat sink 22, and the heat sink 22 can be formed by using active heat dissipation micro-channels or macro-channels, so as to effectively reduce the implementation cost thereof, and improve the reliability of the heat dissipation scheme thereof, and further, the manufacturing process difficulty and the manufacturing cost of the semiconductor laser integrated with the semiconductor laser array package assembly 20 can be effectively reduced, and the reliability thereof can be improved.

Alternatively, a plurality of laser modules 21 are sequentially and centrally arranged on each step 221 of the heat sink 22, and the total height of the bonded steps 221 of the heat sink 22 and the laser modules 21 needs to be ensured not to block or interfere with the optical path of the adjacent laser modules 21.

Further, in an embodiment, the semiconductor laser array package assembly 20 further includes a positive lead-in connector 23, a negative lead-in connector 24, and a first connecting gold wire 25, wherein one end of the positive lead-in connector 23 is used for connecting to a positive electrode of an external power supply, and the other end of the positive lead-in connector 23 is connected to a positive conductor layer of one laser module 21 of the plurality of laser modules 21, which is close to the positive lead-in connector 23, and for convenience of understanding, the laser module 21 close to the positive lead-in connector 23 is defined as a first laser module (not shown); one end of the cathode lead-in connector 24 is used for connecting with the cathode of the power supply, and the other end of the cathode lead-in connector is specifically connected to the cathode conductor layer of one laser module 21 of the plurality of laser modules 21 close to the cathode lead-in connector 24, where the laser module 21 close to the cathode lead-in connector 24 is defined as a second laser module (not shown); the positive conductor layer of the laser module 21 on each step 221 is specifically connected to the negative conductor layer or the positive lead-in connector 23 of the laser module 21 adjacent thereto through the first connecting gold wire 25, and the negative conductor layer thereof is connected to the positive conductor layer or the negative lead-in connector 24 of the laser module 21 adjacent thereto through the first connecting gold wire 25, that is, the laser modules 21 are specifically connected to the positive conductor layer of one of every two adjacent laser modules 21 and the negative conductor layer of the other one in sequence through the first connecting gold wire 25, so as to realize the series connection between the positive lead-in connector 23, the negative lead-in connector 24 and each laser module 21, and further can supply power through an external power supply.

Optionally, the first gold connection wire 25 may also be a conductive wire made of any reasonable material, such as an aluminum wire or a copper wire, which is not limited in this application.

Further, in an embodiment, the semiconductor laser array package assembly 20 further includes a second connecting gold wire 26 and a third connecting gold wire 27, and one end of the second connecting gold wire 26 is specifically connected to the positive lead-in connector 23, and the other end thereof is connected to the positive conductor layer of one laser module 21 of the plurality of laser modules 21 close to the positive lead-in connector 23, that is, the positive conductor layer of the first laser module, while one end of the third connecting gold wire 27 is connected to the negative lead-in connector 24, and the other end thereof is connected to the negative conductor layer of one laser module 21 of the plurality of laser modules 21 close to the negative lead-in connector 24, that is, the negative conductor layer of the second laser module, so as to enable series connection between the positive lead-in connector 23 and the negative lead-in connector 24 and each laser module 21 through the second connecting gold wire 26 and the third connecting gold wire 27, respectively.

Optionally, the first connecting gold wire 25, the second connecting gold wire 26, and the third connecting gold wire 27 are respectively connected to the end of the positive conductor layer or the negative conductor layer of the corresponding laser module 21, so as to avoid affecting the bonding position of the gold wire (not shown) in the laser module 21, which is used for connecting the laser chip (not shown) and the negative conductor layer.

Alternatively, each of the first connecting gold wire 25, the second connecting gold wire 26 and the third connecting gold wire 27 includes a plurality of gold wires, and each of the gold wires is arranged in a matrix to be bonded to the positive conductor layer or the negative conductor layer of the corresponding laser module 21 and the positive lead-in connector 23 or the negative lead-in connector 24.

Alternatively, the positive introduction connector 23 is specifically connected at opposite ends of the bottom step 221 of the plurality of stepped steps 221 of the heat sink 22, and the negative introduction connector 24 is specifically connected at opposite ends of the top step 221 of the plurality of stepped steps 221 of the heat sink 22.

It can be understood that the power supply current of the semiconductor laser array package assembly 20 can be specifically led from the positive electrode of the power supply to the positive electrode lead-in connector 23, and reaches the region of the positive electrode conductor layer in a laser module 21 adjacent to the positive electrode lead-in connector 23 where no laser chip (not shown) is disposed through the first connecting gold wire 25, and is led to the laser chip through the positive electrode conductor layer, and after reaching the negative electrode conductor layer through the gold wire 211 in the laser module 21, the power supply current is led to the positive electrode conductor layer in the laser module 21 on the adjacent step 221 through the third connecting gold wires 27 connected to both ends of the negative electrode conductor layer, and so on until reaching the negative electrode conductor layer in the laser module 21 adjacent to the negative electrode lead-in connector 24, so that the second connecting gold wire 26 leads to the negative electrode lead-in connector 24, and then returns to the negative electrode of the power supply, thereby completing the driving circuit of the entire semiconductor laser array package assembly 20.

In an embodiment, the positive electrode lead-in connector 23 may further include a first positive electrode lead-in connector 231 and a second positive electrode lead-in connector 232, and the first positive electrode lead-in connector 231 and the second positive electrode lead-in connector 232 are respectively connected to two opposite ends of the step 221 where the first laser module is located, and both of them extend along a third direction, where the third direction is specifically an extending direction of the first laser module, that is, a direction in which the vertical gold wire 211 is connected.

Further, the negative electrode lead-in connector 24 may further include a first negative electrode lead-in connector 241 and a second negative electrode lead-in connector 242, and the first negative electrode lead-in connector 241 and the second negative electrode lead-in connector 242 are respectively connected to two opposite ends of the step 221 where the second laser module is located, and both are extended and arranged along the third direction.

Referring to fig. 3 and 4, fig. 3 is a schematic structural diagram of a second embodiment of a semiconductor laser array package assembly of the present application, and fig. 4 is a back view of the semiconductor laser array package assembly of fig. 3. The semiconductor laser array package assembly in this embodiment is different from the first embodiment of the semiconductor laser array package assembly provided in the present application in fig. 2 in that the positive electrode lead-in connector 33 in the semiconductor laser array package assembly 30 further includes a first connection portion 331 and a first extension portion 332, and the negative electrode lead-in connector 24 further includes a second connection portion 341 and a second extension portion 342.

The opposite ends of the first connection portion 331 are respectively connected to the opposite ends of the anode conductor layer of the first laser module (not shown), and the middle portion of the first connection portion 331 is spaced from the first laser module, one end of the first extension portion 332 is connected to one end of the first connection portion 331, and the other end of the first extension portion is wound to one side of the heat sink 32 deviating from the plurality of laser modules 31 and is arranged to extend along a fourth direction, wherein the fourth direction is perpendicular to the extending direction of the first laser module, that is, perpendicular to the third direction.

Optionally, the other end of the first extension 332 is spaced apart from or contacts a side of the heat sink 32 facing away from the plurality of laser modules 31, which is not limited in this application.

Further, two opposite ends of the second connection portion 341 are respectively connected to two opposite ends of a cathode conductor layer of a second laser module (not shown), one end of the second extension portion 342 is connected to one end of the second connection portion 341, and the other end of the second extension portion extends in a fourth direction, so that the other end of the second extension portion 342 is flush with the other end of the first extension portion 332, that is, is located on the same straight line, so as to facilitate connection with the anode and the cathode of an external power supply through the other end of the first extension portion 332 and the other end of the second extension portion 342, and reduce an occupied space of the semiconductor laser array package assembly 30 in the first direction as much as possible, so as to facilitate subsequent product assembly and use.

Alternatively, the first and second connection portions 331 and 341 are n-shaped.

In an embodiment, the semiconductor laser array package assembly 30 further includes a package cover 321, the package cover 321 is specifically disposed on a side of the heat sink 32 away from the plurality of laser modules 31, and the package cover 321 is further provided with a liquid inlet 3211 and a liquid outlet 3212, and cooperates with the heat sink 32 to form a heat dissipation channel (not shown) with a hollow interior, where the heat dissipation channel at least corresponds to the plurality of steps 221 to dissipate heat of the plurality of laser modules 31.

It can be understood that cold water, cooling liquid or any other reasonable liquid with heat dissipation effect can specifically enter from the liquid inlet 3211 on the package cover 321, so as to dissipate heat of the plurality of laser modules 31 through the heat dissipation channel, and then be discharged from the liquid outlet 3212.

Optionally, liquid inlet hole 3211 is specifically located on a side of package cover 321 perpendicular to each laser module 31, and liquid outlet hole 3212 is located on a side of package cover 321 parallel to each laser module 31.

In another embodiment, the semiconductor laser array package assembly 20 may further include two identical heat sinks 32, and one sides of the two heat sinks 32 away from the laser module 31 are connected and fixed to each other, so as to form a heat dissipation channel by using a gap between the two heat sinks 32, and use a sealing gasket as a liquid barrier to conduct flow, so that the heat dissipation channels between the two heat sinks 32 are connected in series.

It can be understood that the laser module 31, the heat sink 32, the step 321, the first connecting gold wire 35, the second connecting gold wire 36, the third connecting gold wire 37 and the gold wire 311 are respectively the same as the laser module 21, the heat sink 22, the step 221, the first connecting gold wire 25, the second connecting gold wire 26, the third connecting gold wire 27 and the gold wire 211, and please refer to fig. 2 and 3 and related text, which are not repeated herein.

Fig. 5 is a schematic structural diagram of an embodiment of a semiconductor laser according to the present application. In the present embodiment, the semiconductor laser 40 includes: a semiconductor laser array package 41 and an optical assembly array 42;

the optical component array 42 is configured to shape laser beams emitted by a plurality of laser modules (not shown) in the semiconductor laser array package assembly 41, and the semiconductor laser array package assembly 41 is specifically the semiconductor laser array package assembly 20 or the semiconductor laser array package assembly 30 as described above, and refer to fig. 2 to 4 and related text, which are not described herein again.

The beneficial effect of this application is: be different from prior art, the anodal conductor layer and the negative conductor layer interval in the laser module that this application provided set up on its base plate, and laser chip further sets up on anodal conductor layer, and laser chip is connected to the one end of gold thread, its other end connects the negative conductor layer, also make laser module through adopting bar modularization packaging framework, with can correspond the array packaging arrangement mode that adopts more flexibility, for example, adopt ladder array packaging arrangement mode to construct a plurality of laser modules into semiconductor laser array packaging subassembly, with can adopt new low-cost, the heat dissipation scheme of high reliability, and then can effectively reduce the corresponding semiconductor laser's that obtains technology degree of difficulty and manufacturing cost, and improve its reliability.

The above are only embodiments of the present application, and not intended to limit the scope of the present application, and all equivalent structures or equivalent processes performed by the present application and the contents of the attached drawings, which are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.

Claims (10)

1. A laser module, comprising:

a substrate;

the positive conductor layer and the negative conductor layer are arranged on the substrate at intervals;

the laser chip is arranged on the anode conductor layer;

and one end of the gold wire is connected to the laser chip, and the other end of the gold wire is connected to the negative conductor layer.

2. The laser module of claim 1,

and the edge of one side of the laser chip, which is far away from the negative electrode conductor layer, is flush with the edge of one side of the substrate.

3. A laser module as defined in claim 1,

the length of the positive conductor layer in a first direction is greater than that of the laser chip in the first direction, and the length of the positive conductor layer in a second direction is greater than or equal to twice the length of the laser chip in the second direction; the first direction is perpendicular to the edge of one side of the laser chip, which is far away from the negative electrode conductor layer, and the second direction is perpendicular to the first direction.

4. A semiconductor laser array package assembly, comprising:

a plurality of laser modules;

the heat sink is provided with a plurality of step-shaped steps, and each step is provided with at least one laser module;

wherein the laser module is as claimed in any one of claims 1-3.

5. The semiconductor laser array package assembly of claim 4,

semiconductor laser array encapsulation subassembly still includes anodal leading-in connecting piece, the leading-in connecting piece of negative pole and first connection gold thread, the one end of anodal leading-in connecting piece is used for connecting external power source anodal, and its other end is connected be close to in a plurality of laser modules the anodal conductor layer of the first laser module of anodal leading-in connecting piece, the one end of the leading-in connecting piece of negative pole is used for connecting the negative pole of power, its other end is connected be close to in a plurality of laser modules the negative pole conductor layer of the second laser module of the leading-in connecting piece of negative pole, and pass through first connection gold thread connects gradually every adjacent two in the laser module anodal conductor layer of one and another negative pole conductor layer, in order to realize anodal leading-in connecting piece the leading-in connecting piece of negative pole and each series connection between the laser module.

6. The semiconductor laser array package assembly of claim 5,

semiconductor laser array encapsulation subassembly still includes the second and connects gold thread and third connection gold thread, the one end that the gold thread was connected to the second is connected anodal leading-in connecting piece, its other end is connected the anodal conductor layer of first laser module, the one end that the gold thread was connected to the third is connected the leading-in connecting piece of negative pole, its other end is connected the negative conductor layer of second laser module.

7. The semiconductor laser array package assembly of claim 5,

the positive electrode lead-in connecting piece comprises a first positive electrode lead-in connecting piece and a second positive electrode lead-in connecting piece, and the first positive electrode lead-in connecting piece and the second positive electrode lead-in connecting piece are respectively connected to two opposite ends of the step where the first laser module is located and are arranged in an extending manner along a third direction; wherein the third direction is an extending direction of the first laser module;

the leading-in connecting piece of negative pole includes leading-in connecting piece of first negative pole and the leading-in connecting piece of second negative pole, the leading-in connecting piece of first negative pole with the leading-in connecting piece of second negative pole connect respectively in the second laser module is located the relative both ends of step, and all follow the third direction extends and arranges.

8. The semiconductor laser array package assembly of claim 5,

the anode leading-in connecting piece comprises a first connecting part and a first extending part, wherein two opposite ends of the first connecting part are respectively connected with two opposite ends of an anode conductor layer of the first laser module, one end of the first extending part is connected with one end of the first connecting part, and the other end of the first extending part is wound to one side of the heat sink, which is far away from the laser modules, and is arranged in an extending manner along a fourth direction; wherein the fourth direction is perpendicular to the direction of extension of the first laser module;

the negative pole leading-in connecting piece includes second connecting portion and second extension, the relative both ends of second connecting portion are connected respectively the relative both ends of the negative pole conductor layer of second laser module, the one end of second extension is connected wherein one end of second connecting portion, and its other end is followed the fourth direction extends and arranges, so that the other end of second extension with the other end of first extension is located same straight line.

9. The semiconductor laser array package assembly of any one of claims 4-8,

semiconductor laser array encapsulation subassembly still includes the encapsulation lid, the encapsulation lid sets up heat sink deviates from one side of a plurality of laser modules, just the encapsulation is covered and still is equipped with feed liquor hole and play liquid hole, and with heat sink mutually supports and forms heat dissipation channel, heat dissipation channel is at least with a plurality of the step position corresponds, is used for right a plurality of laser modules dispel the heat.

10. A semiconductor laser, characterized in that the semiconductor laser comprises: the semiconductor laser array packaging assembly and the optical assembly array are used for shaping laser beams emitted by the laser modules;

wherein the semiconductor laser array package assembly is as claimed in any one of claims 4-9.

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