CN116695099B - Liftable MPCVD growth platform - Google Patents
Liftable MPCVD growth platform Download PDFInfo
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- CN116695099B CN116695099B CN202310593020.3A CN202310593020A CN116695099B CN 116695099 B CN116695099 B CN 116695099B CN 202310593020 A CN202310593020 A CN 202310593020A CN 116695099 B CN116695099 B CN 116695099B
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- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 title claims 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 348
- 238000007789 sealing Methods 0.000 claims abstract description 112
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 92
- 239000010432 diamond Substances 0.000 claims abstract description 92
- 238000001816 cooling Methods 0.000 claims abstract description 53
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 239000011733 molybdenum Substances 0.000 claims abstract description 8
- 239000000498 cooling water Substances 0.000 claims description 189
- 230000005540 biological transmission Effects 0.000 claims description 16
- 238000005086 pumping Methods 0.000 claims description 12
- 238000005192 partition Methods 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 9
- 230000008021 deposition Effects 0.000 abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 238000013021 overheating Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 19
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P40/00—Technologies relating to the processing of minerals
- Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
- Y02P40/57—Improving the yield, e-g- reduction of reject rates
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a liftable MPCVD (multi-purpose chemical vapor deposition) growth table, which comprises a bottom plate, a cover plate lifting driving device, an upper sealing cover, a lower sealing plate, a first water cooling component and a growth table lifting driving device, wherein the bottom plate is provided with a first water cooling component; the upper sealing cover is connected with the cover plate lifting driving device; the upper sealing cover and the lower sealing plate enclose a reaction cavity; the lower sealing plate is provided with a diamond growth table which is provided with a lifting through groove and a positioning ring; the positioning ring is sleeved on the lifting through groove; the growth table lifting driving device is connected with the positioning ring, and the first water cooling assembly is used for cooling the positioning ring. After the sample diamond is placed on the molybdenum support for growth, the sample diamond is gradually and gradually close to the plasma along with continuous growth of the sample diamond, so that the positioning ring can be driven to lift in the lifting through groove through the lifting driving device of the growth table, the distance between the sample diamond and the plasma is adjusted, overheating caused by the fact that the sample diamond is too close to the plasma is avoided, continuous growth of the diamond is guaranteed, and the deposition quality of the diamond is guaranteed.
Description
Technical Field
The invention relates to the technical field related to microwave plasma vapor deposition, in particular to a liftable MPCVD growth table.
Background
Diamond has outstanding performances such as high hardness, good thermal conductivity, excellent optical performance and the like in a mass of materials, but the conventional diamond can only be collected from the nature, has higher cost and is not suitable for large-scale use, and along with the continuous development of technology, the artificial diamond gradually becomes a main means for obtaining diamond materials, so that the production cost is reduced, and the diamond can be used in a larger range. Currently, the main methods for obtaining diamond include a hot wire method, a direct current arc plasma jet method and a microwave method, and among the three diamond deposition technologies, diamond obtained by Microwave Plasma Chemical Vapor Deposition (MPCVD) has high quality and becomes the preferred method.
In the prior art, a base for growing diamond is fixed, and the distance between the surface of the diamond and plasma is more and more close in the continuous growth process of the diamond, so that the temperature of the diamond is overhigh. Therefore, in the practical application process, in order to obtain superior diamond deposition quality, the growth process of the diamond is forced to be interrupted, the diamond is stopped to be taken out, the molybdenum substrate with a deeper groove is replaced, the distance between the surface of the diamond and plasma is pulled, the next round of growth process is restarted, the growth of the whole diamond blank can be completed only by a plurality of rounds of growth processes, and the whole process is time-consuming, labor-consuming and cost-consuming and accompanied by the change of micro growth environment caused by a plurality of times of growth, so that the quality of the diamond is unstable and the yield is reduced.
Disclosure of Invention
Aiming at the problems of the background technology, the invention aims to provide an MPCVD growth table capable of lifting, which solves the problem that the whole growth process of the existing diamond blank is difficult to complete at one time.
To achieve the purpose, the invention adopts the following technical scheme:
an MPCVD growth table capable of lifting comprises a bottom plate, a cover plate lifting driving device, an upper sealing cover, a lower sealing cover, a first water cooling component and a growth table lifting driving device; the cover plate lifting driving device and the lower sealing plate are respectively arranged at the top of the bottom plate; the upper sealing cover is positioned right above the lower sealing plate and is in transmission connection with the cover plate lifting driving device, so that the upper sealing cover can be lifted in the vertical direction; the upper sealing cover can be arranged above the lower sealing plate through a cover, so that the upper sealing cover and the lower sealing plate enclose a reaction cavity; the top of the lower sealing plate is provided with a diamond growth table, and the diamond growth table is provided with a lifting through groove and a positioning ring for placing a molybdenum support; the positioning ring is sleeved in the lifting through groove; the growth table lifting driving device is in transmission connection with the positioning ring, so that the positioning ring can lift in the lifting through groove; the first water cooling assembly is used for cooling the positioning ring.
Further, the growth table lifting driving device comprises a first lifting water pipe and a growth table lifting driving sub-assembly; the lower sealing plate is also provided with a first through hole which is communicated with the bottom of the lifting through groove; the top end of the first lifting water pipe movably penetrates through the connecting hole and the lifting through groove, and is fixedly connected with the bottom of the positioning ring; the bottom end of the first lifting water pipe is fixedly arranged at the driving end of the growth table lifting driving subassembly, so that the growth table lifting driving subassembly can drive the first lifting water pipe to lift in the vertical direction.
Specifically, the growth table lifting driving subassembly comprises a growth table lifting driving piece, a first sliding seat, a second sliding seat and a lifting table; the top of the first sliding seat is provided with a first guide inclined plane, and the bottom of the second sliding seat is provided with a second guide inclined plane matched with the first sliding seat; one side of the first sliding seat is connected with the driving end of the growth table lifting driving piece, so that the growth table lifting driving piece can drive the first sliding seat to reciprocate in the horizontal direction; the second sliding seat is fixedly arranged at the bottom of the lifting platform, and the bottom end of the first lifting water pipe is fixed at the top of the lifting platform.
Further, the first water cooling assembly comprises a first water cooling plate assembly, a second lifting water pipe and a first water nozzle sleeve; a first water cavity is formed in the first water nozzle sleeve, a first sealing partition pipe is arranged in the first water cavity, and the first sealing partition pipe divides the first water cavity into a first water outlet cavity and a first water inlet cavity; the side surface of the first water nozzle sleeve is also provided with a first water inlet channel and a first water outlet channel, the first water inlet channel is communicated with the first water inlet cavity, and the first water outlet channel is communicated with the first water outlet cavity; the first water cooling plate assembly is arranged at the bottom of the positioning ring; the bottom of the first water cooling plate assembly is provided with a first cooling water inlet cavity and a first cooling water outlet cavity, the first cooling water inlet cavity is positioned above the first cooling water outlet cavity, and the first cooling water inlet cavity and the first cooling water outlet cavity are communicated through a plurality of first connecting water holes; the bottom of the first cooling water inlet cavity is provided with a communicated first sealed water inlet sleeve, and the bottom of the cooling water outlet cavity is provided with a communicated first sealed water outlet sleeve; the bottom end of the first lifting water pipe is sleeved in the first water outlet cavity, the top end of the first lifting water pipe is sleeved in the first sealed water outlet sleeve, and the top end of the first lifting water pipe is fixedly connected with the first sealed water outlet sleeve; the second lifting water pipe is sleeved in the first lifting water pipe, and the bottom end of the second lifting water pipe is sleeved in the first sealing separation pipe and communicated with the first water inlet cavity; the top end of the second lifting water pipe passes through the first cooling water outlet cavity and is communicated with the first sealed water inlet sleeve.
Specifically, the first water cooling plate assembly comprises a sealing water plate, a first cooling water inlet plate and a first cooling water outlet plate; the sealing water plate is clamped at the bottom of the positioning ring, and a first clamping groove, a second clamping groove and a third clamping groove are sequentially formed in the bottom of the sealing water plate from top to bottom; the first cooling water inlet plate sleeve is clamped in the second clamping groove, so that the first cooling water inlet plate and the first clamping groove enclose the first cooling water inlet cavity; the first connecting water hole is formed in the first cooling water inlet plate; a bottom first groove of the first cooling water plate; the first cooling water outlet plate is clamped in the third clamping groove, and the first cooling water outlet plate and the first groove enclose the first cooling water outlet cavity.
Further, the water cooling system also comprises a second water cooling assembly, wherein the second water cooling assembly comprises a third cooling water pipe, a fourth cooling water pipe, a second water nozzle sleeve, a connecting water pipe and a second water cooling plate assembly; the second water cooling plate assembly comprises a second cooling water inlet plate and a second cooling water outlet plate; the second cooling water inlet plate is provided with a water inlet connecting hole and a plurality of second connecting water holes; the bottom of the second cooling water inlet plate is provided with a second groove, and the water inlet connecting hole and a plurality of second connecting water holes are respectively communicated with the second groove; the bottom of the second cooling water outlet plate is provided with a water outlet connecting hole; the bottom of the diamond growth table is provided with a fourth clamping groove, a fifth clamping groove and a sixth clamping groove in sequence from top to bottom; the fourth clamping groove is communicated with the lifting through groove through the second through hole; the second cooling water inlet plate is clamped in the fifth clamping groove, and the second cooling water inlet plate and the fourth clamping groove enclose a second cooling water inlet cavity; the second cooling water outlet plate is clamped in the sixth clamping groove, and the second cooling water outlet plate and the sixth clamping groove enclose a second cooling water outlet cavity; the second cooling water outlet cavity is communicated with the water outlet connecting hole; the center of the second water nozzle sleeve is provided with a second water cavity and a third through hole from top to bottom in sequence; the second water cavity is communicated with the third through hole; the side surface of the second water nozzle sleeve is also provided with a second water inlet channel and a second water outlet channel; the bottom end of the connecting water pipe is arranged at the bottom of the second water cavity through a second sealing pipe, and the pipe cavity of the connecting water pipe is communicated with the third through hole; a third sealing pipe is sleeved outside the connecting water pipe, and the third sealing pipe divides the second water cavity into a second water outlet cavity and a second water inlet cavity; the second water outlet cavity is communicated with the second water outlet channel; the second water inlet cavity and the second water inlet channel; the third cooling water pipe is sleeved on the outer side of the connecting water pipe; the bottom end of the third cooling water pipe is sleeved in the third sealing pipe and communicated with the second water inlet cavity; the top end of the third cooling water pipe sequentially passes through the first through hole and the water outlet connecting hole and is sleeved on the water inlet connecting hole, so that the third cooling water pipe is communicated with the second cooling water inlet cavity; the fourth cooling water pipe is sleeved outside the third cooling water pipe; the bottom end of the fourth cooling water pipe is sleeved on the first water outlet cavity; the top end sequentially passes through the first through hole and is sleeved on the water outlet connecting hole, so that the fourth cooling water pipe is communicated with the second cooling water outlet cavity; the first lifting water pipe is sleeved in the connecting water pipe; the top end of the first lifting water pipe sequentially passes through the third through hole, the second water cavity, the first through hole, the second cooling water outlet cavity, the second cooling water outlet and inlet cavity and the second through hole upwards, and is fixedly connected with the bottom of the positioning ring.
More preferably, the top of the lower sealing plate is provided with a vacuum pumping cavity, and the top of the vacuum pumping cavity is provided with an air pumping hole; the bottom of the lower sealing plate is also provided with an air outlet, and the air outlet is communicated with the bottom of the vacuum pumping cavity.
Further, the cover plate lifting driving device comprises a driving motor, a transmission screw rod and a connecting arm; the driving motor is arranged on the bottom plate, and the transmission screw rod is vertically arranged at the driving end of the driving motor; the connecting arm is fixedly connected with the sliding block of the transmission screw rod, and the other end of the connecting arm is fixedly connected with the upper sealing cover.
Compared with the prior art, one of the technical schemes has the following beneficial effects:
in the embodiment, after the sample diamond is placed on the molybdenum support for growth, the sample diamond is gradually and gradually close to the plasma along with the continuous growth of the sample diamond, so that the positioning ring can be driven by the lifting driving device of the growth table to lift in the lifting through groove, the distance between the sample diamond and the plasma is adjusted, the phenomenon that the diamond is too close to the plasma to cause the diamond to be too high in temperature is avoided, and the diamond deposition quality is ensured while the continuous growth of the diamond is ensured; and compared with the existing diamond growth process, the growth table of the embodiment can complete the whole growth process of the diamond at one time, and can avoid stopping the diamond growth process, thereby reducing the growth time of the diamond, improving the efficiency of the diamond and ensuring the stable quality of the diamond.
More preferably, the MPCVD growth table of the embodiment is further provided with a first water cooling component, and the first water cooling component can cool the positioning ring and absorb heat of the positioning ring when the diamond grows.
Drawings
FIG. 1 is a schematic diagram of the structure of an MPCVD growth station according to an embodiment of the present invention;
FIG. 2 is a schematic view showing a partial structure of an MPCVD growth station according to an embodiment of the present invention;
FIG. 3 is an exploded view of the structure of the lower seal plate, diamond growth table and retaining ring of one embodiment of the present invention;
FIG. 4 is an exploded view of the structure of a gantry lifting drive device according to one embodiment of the present invention;
FIG. 5 is a schematic view of the connections between a first nozzle sleeve, a first riser and a second riser according to one embodiment of the invention;
FIG. 6 is a schematic illustration of the connection of a first water cooled plate assembly, a first riser pipe, and a second riser pipe according to one embodiment of the present invention;
FIG. 7 is an exploded view of the structure of a first water cooled panel assembly according to one embodiment of the present invention;
FIG. 8 is a schematic illustration of the connection of a first water nozzle sleeve and a second water nozzle sleeve according to one embodiment of the present invention;
FIG. 9 is a schematic illustration of the connection of a third cooling water pipe, a fourth cooling water pipe, a connecting water pipe and a second nozzle sleeve according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of the connection of a third cooling water pipe, a fourth cooling water pipe, a connecting water pipe and a second water cooling assembly according to an embodiment of the present invention; the method comprises the steps of carrying out a first treatment on the surface of the
FIG. 11 is an exploded view of a second water cooling module according to one embodiment of the present invention;
FIG. 12 is an exploded view of the structure of the vacuum pumping chamber and vacuum sealing plate of one embodiment of the present invention;
fig. 13 is a schematic structural view of a cover lifting driving device according to an embodiment of the present invention.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", and "a third" may explicitly or implicitly include one or more such feature.
In a preferred embodiment of the present application, as shown in fig. 1 to 13, a liftable MPCVD growth table comprises a base plate 1, a cover plate lifting driving device 2, an upper sealing cover 200, a lower sealing plate 100, a first water cooling assembly 3 and a growth table lifting driving device 4; the cover plate lifting driving device 2 and the lower sealing plate 100 are respectively arranged at the top of the bottom plate 1; the upper sealing cover 200 is located right above the lower sealing plate 100, and the upper sealing cover 200 is in transmission connection with the cover plate lifting driving device 2, so that the upper sealing cover 200 can be lifted in the vertical direction; the upper sealing cover 200 may be arranged above the lower sealing plate 100 by covering, so that the upper sealing cover 200 and the lower sealing plate 100 enclose a reaction chamber; the top of the lower sealing plate 100 is provided with a diamond growth table 11, and the diamond growth table 11 is provided with a lifting through groove 110 and a positioning ring 111 for placing a molybdenum support; the positioning ring 111 is sleeved in the lifting through groove 110; the growth table lifting driving device 4 is in transmission connection with the positioning ring 111, so that the positioning ring 111 can lift in the lifting through groove 110; the first water cooling assembly 3 is used for cooling the positioning ring 111.
In this embodiment, the upper sealing cover 200 may be driven by the cover lifting driving device 2 to descend into the lower sealing plate 100, and enclose a reaction chamber with the lower sealing plate 100, so that a sample is continuously grown in the reaction chamber by microwave plasma chemical vapor deposition, thereby obtaining diamond with higher quality. After the diamond growth is completed, the upper sealing cover 200 can also be lifted up under the drive of the cover plate lifting driving device 2, so that the worker can remove the diamond which has grown in the reaction chamber. Further, a diamond growth table 11 is provided in the lower sealing plate 100, a positioning ring 111 for placing a molybdenum support is provided on the top of the diamond growth table 11, and the positioning ring 111 is in transmission connection with the growth table lifting driving device 4. The purpose of the arrangement is that after the sample diamond is placed on the molybdenum support for growth, the sample diamond is gradually and gradually close to the plasma along with the continuous growth of the sample diamond, so that the positioning ring 111 can be driven by the growth table lifting driving device 4 to lift in the lifting through groove 110, the distance between the sample diamond and the plasma is adjusted, the phenomenon that the diamond is too close to the plasma to cause the diamond to have too high temperature is avoided, and the diamond deposition quality is ensured while the continuous growth of the diamond is ensured; and compared with the existing diamond growth process, the growth table of the embodiment can complete the whole growth process of the diamond at one time, and can avoid stopping the diamond growth process, thereby reducing the growth time of the diamond, improving the efficiency of the diamond and ensuring the stable quality of the diamond. More preferably, the MPCVD growth table of the present embodiment is further provided with a first water cooling assembly 3, and the first water cooling assembly 3 may cool the positioning ring 111 during the diamond growth, and absorb heat of the positioning ring 111.
Further, the growth stage lifting drive device 4 comprises a first lifting water pipe 34 and a growth stage lifting drive subassembly 40; the lower sealing plate 100 is further provided with a first through hole 101, and the first through hole 101 is communicated with the bottom of the lifting through groove 110; the top end of the first lifting water pipe 34 movably passes through the first through hole 101 and the lifting through groove 110, and the top end of the first lifting water pipe 34 is fixedly connected with the bottom of the positioning ring 111; the bottom end of the first lifting water pipe 34 is fixedly mounted on the driving end of the growth table lifting driving subassembly 40, so that the growth table lifting driving subassembly 40 can drive the first lifting water pipe 34 to lift in the vertical direction.
Specifically, the growth stage lift drive subassembly 40 includes a growth stage lift drive 41, a first slide mount, a second slide mount 42, and a lift stage 43; a first guiding inclined plane is arranged at the top of the first sliding seat, and a second guiding inclined plane 421 matched with the first sliding seat is arranged at the bottom of the second sliding seat 42; one side of the first sliding seat is connected with the driving end of the growth table lifting driving piece 41, so that the growth table lifting driving piece 41 can drive the first sliding seat to reciprocate in the horizontal direction; the second sliding seat 42 is fixedly mounted at the bottom of the lifting table 43, and the bottom end of the first lifting water pipe 34 is fixed at the top of the lifting table 43.
Specifically, in this embodiment, the first sliding seat is driven by the growth table lifting driving member 41 to move to the right by the limiting groove member 44, and when the first sliding seat moves to the right, the second sliding seat 42 moves upward by the transmission between the first guiding inclined plane and the second guiding inclined plane 421 (a conventional wedge mechanism is not the focus of this embodiment, so the stress between the second sliding seat 42 and the first sliding seat is not described in detail here). Because the lifting table 43 is fixedly mounted on the top of the second sliding seat 42, the lifting table 43 is also driven to lift by the lifting of the second sliding seat 42. Because the bottom end of the first lifting water pipe 34 is fixed on the lifting platform 43, the lifting platform 43 ascends to drive the first lifting water pipe 34 to ascend, so that the positioning ring 111 ascends in the lifting through groove 110. Similarly, when the growth stage lifting driving member 41 drives the first sliding seat to move leftwards in the limiting slot member 44, the second sliding seat 42 descends in the limiting slot, so as to drive the positioning ring 111 to descend in the lifting through slot 110. It should be noted that, in this embodiment, the growth stage lifting driving member 41 is a driving cylinder. By means of the arrangement, the growth table lifting driving subassembly 40 can drive the positioning ring 111 to move through the first lifting water pipe 34, so that the positioning ring 111 can move in the lifting through groove 110, the distance between sample diamond and plasma is ensured, the plasma is prevented from being intercepted by the sample diamond, and the deposition quality of the diamond is ensured.
Further, the first water cooling assembly 3 includes a first water cooling plate assembly 31, a second elevating water pipe 32, and a first nozzle sleeve 33; a first water cavity 330 is provided in the first water nozzle sleeve 33, a first sealing partition tube 331 is provided in the first water cavity 330, and the first sealing partition tube 331 divides the first water cavity 330 into a first water outlet cavity 3301 and a first water inlet cavity 3302; the side surface of the first tap sleeve 33 is further provided with a first water inlet channel 332 and a first water outlet channel 333, the first water inlet channel 332 is communicated with the first water inlet cavity 3302, and the first water outlet channel 333 is communicated with the first water outlet cavity 3301; the first water cooling plate assembly 31 is mounted at the bottom of the positioning ring 111; the bottom of the first water cooling plate assembly 31 is provided with a first cooling water inlet cavity 311 and a first cooling water outlet cavity 312, the first cooling water inlet cavity 311 is positioned above the first cooling water outlet cavity 312, and the first cooling water inlet cavity 311 and the first cooling water outlet cavity 312 are communicated through a plurality of first connecting water holes 313; the bottom of the first cooling water inlet cavity 311 is provided with a first communicated sealed water inlet sleeve 3111, and the bottom of the first cooling water outlet cavity 312 is provided with a second communicated sealed water outlet sleeve 3121; the bottom end of the first lifting water pipe 34 is sleeved in the first water outlet cavity 3301, and the top end of the first lifting water pipe 34 is sleeved in the second sealed water outlet sleeve 3121; the second lifting water pipe 32 is sleeved in the first lifting water pipe 34, and the bottom end of the second lifting water pipe 32 is sleeved in the first sealing partition pipe 331 and is communicated with the first water inlet cavity 3302; the top end of the second lifting water pipe 32 passes through the first cooling water outlet cavity 312 and is sleeved with the first sealed water inlet sleeve 3111.
Specifically, in this embodiment, the first tap sleeve 33 is mounted on the top of the lifting platform 43, a first water inlet channel 332 and a first water outlet channel 333 are respectively provided on the side surfaces of the first tap sleeve 33, and a first water cavity 330 is further provided inside the first tap sleeve 33. The bottom of the second lifting water pipe 32 is sleeved in the first water cavity 330 through a first sealing partition pipe 331, so that the first water cavity 330 is partitioned into the first water outlet cavity 3301 and the first water inlet cavity 3302 by the first sealing partition pipe 331, and the second lifting water pipe 32 is also communicated with the first water inlet cavity 3302. The top end of the second lifting water pipe 32 passes through the lower sealing plate 100 upwards and is sleeved in the first sealed water inlet sleeve 3111, so that the first cooling water inlet cavity 311 is communicated with the first water inlet cavity 3302 through the second lifting water pipe 32. Further, the first water lifting pipe 34 is sleeved outside the second water lifting pipe 32, and the second water lifting pipe 32 is penetrated from the inside of the first water lifting pipe 34. The bottom end of the first water lifting pipe 34 is communicated with the first water outlet cavity 3301, while the top end of the first water lifting pipe 34 passes through the lower sealing plate 100 and is sleeved in the second sealed water outlet sleeve 3121, so that the first cooling water outlet cavity 312 is communicated with the first water outlet cavity 3301 through the first water lifting pipe 34. More preferably, the first cooling water inlet cavity 311 is further communicated with the first cooling water outlet cavity 312 through a plurality of first connecting water holes 313.
Therefore, in the present embodiment, the cooling water enters the first water inlet chamber 3302 through the first water inlet passage 332 and then enters the first cooling water inlet chamber 311 through the second water lifting pipe 32, thereby absorbing heat to the positioning ring 111. The cooling water having absorbed heat flows into the first cooling water outlet chamber 312 through the plurality of first connection water holes 313, then flows back into the first water outlet chamber 3301 through the second lifting water pipe 32, and finally flows out of the first water outlet channel 333, thereby realizing cooling water circulation. In this embodiment, the cooling water circulation is realized by the first water lifting pipe 34 and the second water lifting pipe 32, so that the heat dissipation of the positioning ring 111 is ensured. More preferably, the first lifting water pipe 34 is not only used for water circulation, but also can drive the positioning ring 111 to lift, so that the application range of the first lifting water pipe 34 is enlarged, the structure of the MPCVD growth platform is simplified, and the volume of the MPCVD growth platform is reduced.
Specifically, the first water cooling plate assembly 31 includes a sealing water plate 314, a first cooling water inlet plate 315, and a first cooling water outlet plate 316; the sealing water plate 314 is clamped at the bottom of the positioning ring 111, and a first clamping groove 3141, a second clamping groove 3142 and a third clamping groove 3143 are sequentially formed in the bottom of the sealing water plate 314 from top to bottom; the first cooling water inlet plate 315 is sleeved in the second clamping groove 3142, so that the first cooling water inlet plate 315 and the first clamping groove 3141 enclose the first cooling water inlet cavity 311; the first water connection hole 313 is formed in the first cooling water inlet plate 315; a bottom first recess 3150 of the first cooling intake plate 315; the first cooling water outlet plate 316 is fastened to the third fastening groove 3143, and the first cooling water outlet plate 316 and the first groove 3150 enclose the first cooling water outlet cavity 312.
In this embodiment, the sealing water plate 314 is clamped at the bottom of the positioning ring 111, so that the positioning ring 111 can seal the lifting through groove 110 through the sealing water plate 314, thereby avoiding the reaction chamber from communicating with the outside through the lifting through groove 110, and ensuring the deposition quality of diamond. Further, the bottom of the sealing water plate 314 is provided with the first clamping groove 3141, the second clamping groove 3142 and the third clamping groove 3143 in sequence from top to bottom, and the first cooling water inlet plate 315 is clamped in the second clamping groove 3142 and encloses the first cooling water inlet cavity 311 with the first clamping groove 3141; the first cooling water outlet plate 316 is fastened to the third fastening groove 3143, and the first recess 3150 forms the first cooling water outlet chamber 312. The purpose of this arrangement is that the sealing water plate 314, the first cooling water inlet plate 315 and the first cooling water outlet plate 316 may be spliced to form the first cooling water outlet cavity 312 and the first cooling water inlet cavity 311, so that the first water cooling plate assembly 31 has a simple structure and low manufacturing cost. More preferably, the first cooling water inlet plate 315 is further provided with a plurality of first water connection holes 313, so that the positioning ring 111 is cooled uniformly during heat dissipation, and the temperature difference on the positioning ring 111 is avoided, so that the wafer is not broken due to thermal stress.
Further, the water cooling system further comprises a second water cooling assembly 5, wherein the second water cooling assembly 5 comprises a third cooling water pipe 51, a fourth cooling water pipe 52, a second water nozzle sleeve 53, a connecting water pipe 56 and a second water cooling plate assembly 54; the second water cooling plate assembly 54 includes a second cooling inlet plate 541 and a second cooling outlet plate 542; the second cooling water inlet plate 541 is provided with a water inlet connection hole 5411 and a plurality of second connection water holes 5412; a second groove 5413 is formed at the bottom of the second cooling water inlet plate 541, and the water inlet connection hole 5411 and the plurality of second connection water holes 5412 are respectively communicated with the second groove 5413; the bottom of the second cooling water outlet plate 542 is provided with a water outlet connection hole 5421; the bottom of the diamond growth table 11 is provided with a fourth clamping groove 112, a fifth clamping groove 113 and a sixth clamping groove 114 in sequence from top to bottom; the fourth clamping groove 112 is communicated with the lifting through groove 110 through the second through hole 1120; the second cooling water inlet plate 541 is clamped in the fifth clamping groove 113, and the second cooling water inlet plate 541 and the fourth clamping groove 112 enclose a second cooling water inlet cavity 57; the second cooling water outlet plate 542 is clamped in the sixth clamping groove 114, and the second cooling water outlet plate 542 and the sixth clamping groove 114 enclose a second cooling water outlet cavity 58; the second cooling water outlet chamber 58 communicates with the water outlet connection hole 5421; the center of the second tap sleeve 53 is provided with a second water cavity 531 and a third through hole 532 from top to bottom in sequence; the second water chamber 531 communicates with the third through hole 532; the side surface of the second tap sleeve 53 is also provided with a second water inlet channel 533 and a second water outlet channel 534; the bottom end of the connecting water pipe 56 is mounted at the bottom of the second water cavity 531 through a second sealing pipe 561, and the pipe cavity of the connecting water pipe 56 is communicated with the third through hole 532; a third sealing pipe 562 is sleeved outside the connecting water pipe 56, and the third sealing pipe 562 divides the second water cavity 531 into a second water outlet cavity 5311 and a second water inlet cavity 5312; the second water outlet cavity 5311 is communicated with the second water outlet channel 534; the second water inlet cavity 5312 and the second water inlet channel 533; the third cooling water pipe 51 is sleeved outside the connecting water pipe 56; the bottom end of the third cooling water pipe 51 is sleeved in the third sealing pipe 562 and is communicated with the second water inlet cavity 5312; the top end of the third cooling water pipe 51 sequentially passes through the first through hole 101 and the water outlet connection hole 5421, and is sleeved in the water inlet connection hole 5411, so that the third cooling water pipe 51 is communicated with the second cooling water inlet cavity 57; the fourth cooling water pipe 52 is sleeved outside the third cooling water pipe 51; the bottom end of the fourth cooling water pipe 52 is sleeved in the first water outlet cavity 3301; the top end of the fourth cooling water pipe 52 sequentially passes through the first through hole 101 and is sleeved in the water outlet connection hole 5421, so that the fourth cooling water pipe 52 is communicated with the second cooling water outlet cavity 58; the first lifting water pipe 34 is sleeved in the connecting water pipe 56; the top end of the first riser 34 passes through the third through hole 532, the second water cavity 531, the first through hole 101, the second cooling water outlet cavity 58, the second cooling water inlet cavity 57 and the second through hole 1120 in turn, and is fixedly connected to the bottom of the positioning ring 111.
In this embodiment, the bottom of the diamond growth table 11 is sequentially provided with a fourth clamping groove 112, a fifth clamping groove 113 and a sixth clamping groove 114 from top to bottom, the outside of the first lifting water pipe 34 is further wrapped with a connecting water pipe 56, the top end of the connecting water pipe 56 is fixedly mounted on the top of the fourth clamping groove 112, the bottom end of the connecting water pipe 56 is sleeved on the second water cavity 531 of the second water nozzle sleeve 53 downwards, and the connecting water pipe 56 is mounted on the bottom of the second water cavity 531 through a second sealing pipe 561, so that the third through hole 532 is communicated with the connecting water pipe 56. More preferably, the fourth clamping groove 112 is further provided with a second through hole 1120 communicated with the lifting through groove 110, so that the top end of the first lifting water pipe 34 can enter the connecting water pipe 56 through the third through hole 532 and then pass through the second through hole 1120 to extend into the lifting through groove 110 to be communicated with the first sealed water outlet pipe, thereby enabling the first water cooling assembly 3 to independently cool the positioning ring 111.
Further, the fifth clamping groove 113 is provided with a second cooling water inlet plate 541, such that the second cooling water inlet plate 541 and the fourth clamping groove 112 enclose a second cooling water inlet cavity 57, and the sixth clamping groove 114 is provided with a second cooling water outlet plate 542, such that the second cooling water outlet plate 542 and the second groove 5413 at the bottom of the second cooling water inlet plate 541 enclose a second cooling water outlet cavity 58, and the second cooling water outlet cavity 58 further includes a plurality of second connection water holes 5412 and the second cooling water inlet cavity 57. Further, a third sealing tube 562 is sleeved in the second water cavity 531, the third sealing tube 562 divides the second water cavity 531 into a second water outlet cavity 5311 and a second water inlet cavity 5312, the second water inlet cavity 5312 is communicated with the second water inlet channel 533, and the second water outlet cavity 5311 is communicated with the second water outlet channel 534. The third cooling water pipe 51 is further wrapped outside the connecting water pipe 56, the bottom end of the third cooling water pipe 51 passes through the third sealing pipe 562 and is communicated with the second water inlet cavity 5312, and the top end of the third cooling water pipe 51 sequentially passes through the first through hole 101 and the second cooling water outlet plate 542 and is sleeved in the water inlet connecting hole 5411, so that the second water inlet cavity 5312 is communicated with the second cooling water inlet cavity 57 through the third cooling water pipe 51. More preferably, the third cooling water pipe 51 is further wrapped with a fourth cooling water pipe 52, the bottom of the fourth cooling water pipe 52 is communicated with the second water outlet cavity 5311, and the top end of the fourth cooling water pipe 52 passes through the first through hole 101 and is sleeved in the water outlet connection hole 5421, so that the second water outlet cavity 5311 is communicated with the second cooling water outlet cavity 58 through the fourth cooling water pipe 52. Accordingly, the cooling water enters the second water inlet chamber 5312 through the second water inlet passage 533 and then flows to the second cooling water outlet chamber 58 through the third cooling water pipe 51, thereby cooling the diamond growth table 11. After the cooling water absorbs the heat of the diamond growth table 11, the cooling water flows from the second connection water holes 5412 to the second cooling water outlet cavity 58, then the water in the second cooling water outlet cavity 58 flows back to the second water outlet cavity 5311 through the fourth cooling water pipe 52, and finally flows out from the second water outlet channel 534, thereby realizing the effect of cooling water circulation. The purpose of this arrangement is that the diamond growth stage 11 is also located in the reaction chamber during deposition of sample diamond growth, so that the entire diamond growth stage 11 also belongs to the boundary of the reaction chamber for microwave reflection. Therefore, the diamond growth table 11 generates heat under the microwave plasma radiation, and the positioning ring 111 is mounted on the diamond growth table 11, so as to avoid the heat collected by the diamond growth table 11 to affect the growth and deposition of the sample diamond, so that the second water cooling assembly 5 is provided to cool and dissipate heat of the diamond growth table 11, thereby avoiding affecting the growth of the sample diamond. More preferably, in the present embodiment, the first lifting water pipe 34, the second lifting water pipe 32, the third cooling water pipe 51, the fourth cooling water pipe 52 and the connecting water pipe 56 are coaxially arranged, so that the structure of the growth table is simplified, and the production cost of the growth table is reduced.
More preferably, the top of the lower sealing plate 100 is provided with a vacuum pumping cavity 102 and a vacuum sealing 103 plate; an air suction hole 1031 is formed in the top of the vacuum sealing 103 plate; the vacuum sealing 103 plate is used for covering the top of the vacuumizing cavity 102, so that the vacuumizing cavity 102 and the vacuum sealing 103 plate enclose a vacuumizing chamber;
the bottom of the lower sealing plate 100 is further provided with an exhaust pipe 104, and the exhaust pipe 104 is communicated with the bottom of the vacuum pumping cavity 102.
The arrangement can ensure that the reaction cavity is in a vacuum state, thereby ensuring the growth of sample diamond.
Further, the cover plate lifting driving device 2 comprises a driving motor 21, a transmission screw 22 and a connecting arm 23; the driving motor 21 is arranged on the bottom plate 1, and the transmission screw rod 22 is vertically arranged on the driving end of the driving motor 21; the connecting arm 23 is fixedly connected with the sliding block 221 of the transmission screw 22, and the other end of the connecting arm 23 is fixedly connected with the upper sealing cover 200.
Specifically, in this embodiment, the driving motor 21 drives the slider 221 of the driving screw 22 to lift in the vertical direction by driving the driving screw 22 to rotate forward and backward, so as to drive the upper sealing cover 200 fixedly connected with the slider 221 to lift, so that the upper sealing cover 200 can descend to form a reaction chamber with the lower sealing plate 100 when the diamond of the sample grows; after the sample diamond is deposited and grown, the upper sealing cover 200 can be lifted up to facilitate taking out the deposited and grown diamond.
The technical principle of the present invention is described above in connection with the specific embodiments. The description is made for the purpose of illustrating the general principles of the invention and should not be taken in any way as limiting the scope of the invention. Other embodiments of the invention will be apparent to those skilled in the art from consideration of this specification without undue burden.
Claims (6)
1. The lifting MPCVD growth table is characterized by comprising a bottom plate, a cover plate lifting driving device, an upper sealing cover, a lower sealing cover, a first water cooling component and a growth table lifting driving device;
the cover plate lifting driving device and the lower sealing plate are respectively arranged at the top of the bottom plate;
the upper sealing cover is positioned right above the lower sealing plate and is in transmission connection with the cover plate lifting driving device, so that the upper sealing cover can be lifted in the vertical direction; the upper sealing cover can be arranged above the lower sealing plate through a cover, so that the upper sealing cover and the lower sealing plate enclose a reaction cavity;
the top of the lower sealing plate is provided with a diamond growth table, and the diamond growth table is provided with a lifting through groove and a positioning ring for placing a molybdenum support; the positioning ring is sleeved in the lifting through groove;
The growth table lifting driving device is in transmission connection with the positioning ring, so that the positioning ring can lift in the lifting through groove;
the first water cooling assembly is used for cooling the positioning ring;
the growth table lifting driving device comprises a first lifting water pipe and a growth table lifting driving sub-assembly;
the lower sealing plate is also provided with a first through hole which is communicated with the bottom of the lifting through groove;
the top end of the first lifting water pipe movably penetrates through the first through hole and the lifting through groove, and is fixedly connected with the bottom of the positioning ring;
the bottom end of the first lifting water pipe is fixedly arranged at the driving end of the growth table lifting driving subassembly, so that the growth table lifting driving subassembly can drive the first lifting water pipe to lift in the vertical direction;
the first water cooling assembly comprises a first water cooling plate assembly, a second lifting water pipe and a first water nozzle sleeve;
the first water nozzle sleeve is arranged at the top of the growth table lifting driving sub-assembly;
a first water cavity is formed in the first water nozzle sleeve, a first sealing partition pipe is arranged in the first water cavity, and the first sealing partition pipe divides the first water cavity into a first water outlet cavity and a first water inlet cavity;
The side surface of the first water nozzle sleeve is also provided with a first water inlet channel and a first water outlet channel, the first water inlet channel is communicated with the first water inlet cavity, and the first water outlet channel is communicated with the first water outlet cavity;
the first water cooling plate assembly is arranged at the bottom of the positioning ring; the bottom of the first water cooling plate assembly is provided with a first cooling water inlet cavity and a first cooling water outlet cavity, the first cooling water inlet cavity is positioned above the first cooling water outlet cavity, and the first cooling water inlet cavity and the first cooling water outlet cavity are communicated through a plurality of first connecting water holes;
the bottom of the first cooling water inlet cavity is provided with a communicated first sealed water inlet sleeve, and the bottom of the first cooling water outlet cavity is provided with a communicated second sealed water outlet sleeve;
the bottom end of the first lifting water pipe is sleeved in the first water outlet cavity, and the top end of the first lifting water pipe is sleeved in the second sealed water outlet sleeve;
the second lifting water pipe is sleeved in the first lifting water pipe, and the bottom end of the second lifting water pipe is sleeved in the first sealing separation pipe and communicated with the first water inlet cavity;
the top end of the second lifting water pipe passes through the first cooling water outlet cavity and is sleeved on the first sealed water inlet sleeve.
2. The liftable MPCVD growth table of claim 1, wherein the growth table lift drive subassembly comprises a growth table lift drive, a first slide mount, a second slide mount, a limit slot, and a lift table;
the first sliding seat and the second sliding seat are respectively arranged on the limiting groove piece;
the top of the first sliding seat is provided with a first guide inclined plane, and the bottom of the second sliding seat is provided with a second guide inclined plane matched with the first sliding seat;
one side of the first sliding seat is connected with the driving end of the growth table lifting driving piece, so that the growth table lifting driving piece can drive the first sliding seat to reciprocate in the horizontal direction;
the second sliding seat is fixedly arranged at the bottom of the lifting platform, and the bottom end of the first lifting water pipe is fixed at the top of the lifting platform.
3. The liftable MPCVD growth table of claim 1, wherein the first water-cooled plate assembly comprises a sealing water plate, a first cooling water inlet plate, and a first cooling water outlet plate;
the sealing water plate is clamped at the bottom of the positioning ring, and a first clamping groove, a second clamping groove and a third clamping groove are sequentially formed in the bottom of the sealing water plate from top to bottom;
The first cooling water inlet plate is clamped in the second clamping groove, so that the first cooling water inlet plate and the first clamping groove enclose the first cooling water inlet cavity; the first connecting water hole is formed in the first cooling water inlet plate; the bottom of the first cooling water inlet plate is provided with a first groove;
the first cooling water outlet plate is clamped in the third clamping groove, and the first cooling water outlet plate and the first groove enclose the first cooling water outlet cavity.
4. The liftable MPCVD growth table of claim 1, further comprising a second water cooling assembly comprising a third cooling water pipe, a fourth cooling water pipe, a connecting water pipe, a second water nozzle sleeve, and a second water cooling plate assembly;
the second water cooling plate assembly comprises a second cooling water inlet plate and a second cooling water outlet plate;
the second cooling water inlet plate is provided with a water inlet connecting hole and a plurality of second connecting water holes; the bottom of the second cooling water inlet plate is provided with a second groove, and the water inlet connecting hole and a plurality of second connecting water holes are respectively communicated with the second groove;
the bottom of the second cooling water outlet plate is provided with a water outlet connecting hole;
The bottom of the diamond growth table is provided with a fourth clamping groove, a fifth clamping groove and a sixth clamping groove in sequence from top to bottom;
the fourth clamping groove is communicated with the lifting through groove through a second through hole;
the second cooling water inlet plate is clamped in the fifth clamping groove, and the second cooling water inlet plate and the fourth clamping groove enclose a second cooling water inlet cavity;
the second cooling water outlet plate is clamped in the sixth clamping groove, and the second cooling water outlet plate and the second groove enclose a second cooling water outlet cavity; the second cooling water outlet cavity is communicated with the water outlet connecting hole;
the center of the second water nozzle sleeve is provided with a second water cavity and a third through hole from top to bottom in sequence; the second water cavity is communicated with the third through hole;
the side surface of the second water nozzle sleeve is also provided with a second water inlet channel and a second water outlet channel;
the bottom end of the connecting water pipe is arranged at the bottom of the second water cavity through a second sealing pipe, and the pipe cavity of the connecting water pipe is communicated with the third through hole;
a third sealing pipe is sleeved outside the connecting water pipe, and the third sealing pipe divides the second water cavity into a second water outlet cavity and a second water inlet cavity; the second water outlet cavity is communicated with the second water outlet channel; the second water inlet cavity and the second water inlet channel;
The third cooling water pipe is sleeved on the outer side of the connecting water pipe; the bottom end of the third cooling water pipe is sleeved in the third sealing pipe and is communicated with the second water inlet cavity; the top end of the third cooling water pipe sequentially passes through the first through hole and the water outlet connecting hole and is sleeved on the water inlet connecting hole, so that the third cooling water pipe is communicated with the second cooling water inlet cavity;
the fourth cooling water pipe is sleeved outside the third cooling water pipe; the bottom end of the fourth cooling water pipe is sleeved on the second water outlet cavity; the top end of the fourth cooling water sequentially passes through the first through hole and is sleeved on the water outlet connecting hole, so that the fourth cooling water pipe is communicated with the second cooling water outlet cavity;
the first lifting water pipe is sleeved in the connecting water pipe; the top end of the first lifting water pipe sequentially passes through the third through hole, the second water cavity, the first through hole, the second cooling water outlet cavity, the second cooling water inlet cavity and the second through hole upwards, and is fixedly connected with the bottom of the positioning ring.
5. The lifting MPCVD growth table of claim 1, wherein the top of the lower sealing plate is provided with a vacuum pumping chamber and a vacuum sealing plate; the top of the vacuum sealing plate is provided with an air suction hole; the vacuum sealing plate is used for covering the top of the vacuum pumping cavity, so that the vacuum pumping cavity and the vacuum sealing plate enclose a vacuum pumping chamber;
The bottom of the lower sealing plate is also provided with an air outlet, and the air outlet is communicated with the bottom of the vacuum pumping cavity.
6. The lifting MPCVD growth table of claim 1, wherein the cover plate lifting drive comprises a drive motor, a drive screw, and a connecting arm;
the driving motor is arranged on the bottom plate, and the transmission screw rod is vertically arranged at the driving end of the driving motor; the connecting arm is fixedly connected with the sliding block of the transmission screw rod, and the other end of the connecting arm is fixedly connected with the upper sealing cover.
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| CN202310593020.3A CN116695099B (en) | 2023-05-24 | 2023-05-24 | Liftable MPCVD growth platform |
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| CN202310593020.3A CN116695099B (en) | 2023-05-24 | 2023-05-24 | Liftable MPCVD growth platform |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110017139A (en) * | 2009-08-13 | 2011-02-21 | 주식회사 테스 | Substrate treating apparatus |
| JP2013121885A (en) * | 2011-12-09 | 2013-06-20 | Cornes Technologies Ltd | Microwave plasma processing device |
| CN111826635A (en) * | 2020-08-04 | 2020-10-27 | 西安电子科技大学 | Microwave plasma chemical vapor deposition device |
| CN112853327A (en) * | 2020-12-31 | 2021-05-28 | 成都纽曼和瑞微波技术有限公司 | Microwave plasma chemical vapor deposition system |
| CN113025997A (en) * | 2019-12-24 | 2021-06-25 | 广东众元半导体科技有限公司 | MPCVD substrate table adaptable to thickness change of multi-size substrates |
| CN217973393U (en) * | 2022-07-11 | 2022-12-06 | 浙江晶盛机电股份有限公司 | Base station lifting unit and growth equipment |
| CN218179326U (en) * | 2022-07-28 | 2022-12-30 | 成都欧拉微波元器件有限公司 | A sample platform water-cooling structure for MPCVD |
| CN218321638U (en) * | 2022-10-25 | 2023-01-17 | 山西方维晟智能科技有限公司 | Lifting base station device for chemical vapor deposition |
| CN115896933A (en) * | 2022-12-06 | 2023-04-04 | 郑州磨料磨具磨削研究所有限公司 | Large-size diamond, MPCVD device and large-size diamond preparation method |
| WO2023082855A1 (en) * | 2021-11-11 | 2023-05-19 | 上海陛通半导体能源科技股份有限公司 | Vapor deposition device capable of rotating and lifting in reciprocating manner |
-
2023
- 2023-05-24 CN CN202310593020.3A patent/CN116695099B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110017139A (en) * | 2009-08-13 | 2011-02-21 | 주식회사 테스 | Substrate treating apparatus |
| JP2013121885A (en) * | 2011-12-09 | 2013-06-20 | Cornes Technologies Ltd | Microwave plasma processing device |
| CN113025997A (en) * | 2019-12-24 | 2021-06-25 | 广东众元半导体科技有限公司 | MPCVD substrate table adaptable to thickness change of multi-size substrates |
| CN111826635A (en) * | 2020-08-04 | 2020-10-27 | 西安电子科技大学 | Microwave plasma chemical vapor deposition device |
| CN112853327A (en) * | 2020-12-31 | 2021-05-28 | 成都纽曼和瑞微波技术有限公司 | Microwave plasma chemical vapor deposition system |
| WO2023082855A1 (en) * | 2021-11-11 | 2023-05-19 | 上海陛通半导体能源科技股份有限公司 | Vapor deposition device capable of rotating and lifting in reciprocating manner |
| CN217973393U (en) * | 2022-07-11 | 2022-12-06 | 浙江晶盛机电股份有限公司 | Base station lifting unit and growth equipment |
| CN218179326U (en) * | 2022-07-28 | 2022-12-30 | 成都欧拉微波元器件有限公司 | A sample platform water-cooling structure for MPCVD |
| CN218321638U (en) * | 2022-10-25 | 2023-01-17 | 山西方维晟智能科技有限公司 | Lifting base station device for chemical vapor deposition |
| CN115896933A (en) * | 2022-12-06 | 2023-04-04 | 郑州磨料磨具磨削研究所有限公司 | Large-size diamond, MPCVD device and large-size diamond preparation method |
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|---|---|
| CN116695099A (en) | 2023-09-05 |
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