CN116692869B - 一种水性体系下制备的纳米硅及其制备方法 - Google Patents
一种水性体系下制备的纳米硅及其制备方法 Download PDFInfo
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- CN116692869B CN116692869B CN202310954487.6A CN202310954487A CN116692869B CN 116692869 B CN116692869 B CN 116692869B CN 202310954487 A CN202310954487 A CN 202310954487A CN 116692869 B CN116692869 B CN 116692869B
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- silicon
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- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 64
- 238000002360 preparation method Methods 0.000 title abstract description 17
- 238000000227 grinding Methods 0.000 claims abstract description 52
- 239000000243 solution Substances 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000011259 mixed solution Substances 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 16
- 238000001035 drying Methods 0.000 claims abstract description 13
- 239000003223 protective agent Substances 0.000 claims abstract description 12
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 3
- 239000012498 ultrapure water Substances 0.000 claims abstract description 3
- 239000004576 sand Substances 0.000 claims description 14
- 239000012298 atmosphere Substances 0.000 claims description 9
- RWSXRVCMGQZWBV-WDSKDSINSA-N glutathione Chemical compound OC(=O)[C@@H](N)CCC(=O)N[C@@H](CS)C(=O)NCC(O)=O RWSXRVCMGQZWBV-WDSKDSINSA-N 0.000 claims description 6
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- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
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- FHVDTGUDJYJELY-UHFFFAOYSA-N 6-{[2-carboxy-4,5-dihydroxy-6-(phosphanyloxy)oxan-3-yl]oxy}-4,5-dihydroxy-3-phosphanyloxane-2-carboxylic acid Chemical compound O1C(C(O)=O)C(P)C(O)C(O)C1OC1C(C(O)=O)OC(OP)C(O)C1O FHVDTGUDJYJELY-UHFFFAOYSA-N 0.000 description 4
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 239000002041 carbon nanotube Substances 0.000 description 1
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- 150000003254 radicals Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103531761A (zh) * | 2013-10-28 | 2014-01-22 | 上海利物盛企业集团有限公司 | 一种纳米硅的制备方法 |
CN111180719A (zh) * | 2020-01-07 | 2020-05-19 | 马鞍山科达普锐能源科技有限公司 | 一种三级研磨制备纳米硅的方法 |
CN111266162A (zh) * | 2020-03-25 | 2020-06-12 | 长沙矿冶研究院有限责任公司 | 一种纳米硅粉的制备方法 |
WO2022030707A1 (ko) * | 2020-08-07 | 2022-02-10 | 한국과학기술연구원 | 실리콘 습식 분쇄용 혼합 분산액 및 이를 이용한 나노 실리콘 슬러리 제조 방법 및 이에 의해 제조된 나노 실리콘 슬러리 |
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2023
- 2023-08-01 CN CN202310954487.6A patent/CN116692869B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103531761A (zh) * | 2013-10-28 | 2014-01-22 | 上海利物盛企业集团有限公司 | 一种纳米硅的制备方法 |
CN111180719A (zh) * | 2020-01-07 | 2020-05-19 | 马鞍山科达普锐能源科技有限公司 | 一种三级研磨制备纳米硅的方法 |
CN111266162A (zh) * | 2020-03-25 | 2020-06-12 | 长沙矿冶研究院有限责任公司 | 一种纳米硅粉的制备方法 |
WO2022030707A1 (ko) * | 2020-08-07 | 2022-02-10 | 한국과학기술연구원 | 실리콘 습식 분쇄용 혼합 분산액 및 이를 이용한 나노 실리콘 슬러리 제조 방법 및 이에 의해 제조된 나노 실리콘 슬러리 |
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Inventor after: Lu Zhouguang Inventor after: Li Yingzhi Inventor after: Wang Zhan Inventor after: Zheng Yongcan Inventor after: Lin Zewei Inventor before: Lu Zhouguang Inventor before: Li Yingzhi Inventor before: Wang Zhan Inventor before: Zheng Yongcan Inventor before: Lin Zewei |
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Effective date of registration: 20240927 Address after: Room 203, Building 17, Zone A, Tanglang Industrial Park, No. 54 Xiangrui 1st Road, Tanglang Community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province 518000 Patentee after: Shenzhen Dianmu New Material Technology Co.,Ltd. Country or region after: China Address before: No. 1088, Xueyuan Avenue, Nanshan District, Shenzhen, Guangdong 518055 Patentee before: Southern University of Science and Technology Country or region before: China |