CN116679388A - Optical fiber array structure coupled with silicon optical integrated chip - Google Patents
Optical fiber array structure coupled with silicon optical integrated chip Download PDFInfo
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- CN116679388A CN116679388A CN202310684205.5A CN202310684205A CN116679388A CN 116679388 A CN116679388 A CN 116679388A CN 202310684205 A CN202310684205 A CN 202310684205A CN 116679388 A CN116679388 A CN 116679388A
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- optical
- silicon
- waveguide
- chip
- optical fiber
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- 230000003287 optical effect Effects 0.000 title claims abstract description 99
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 63
- 239000010703 silicon Substances 0.000 title claims abstract description 63
- 239000013307 optical fiber Substances 0.000 title claims abstract description 46
- 230000008878 coupling Effects 0.000 claims abstract description 38
- 238000010168 coupling process Methods 0.000 claims abstract description 38
- 238000005859 coupling reaction Methods 0.000 claims abstract description 38
- 239000000835 fiber Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000011165 process development Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/30—Optical coupling means for use between fibre and thin-film device
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/3628—Mechanical coupling means for mounting fibres to supporting carriers
- G02B6/3632—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means
- G02B6/3636—Mechanical coupling means for mounting fibres to supporting carriers characterised by the cross-sectional shape of the mechanical coupling means the mechanical coupling means being grooves
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/36—Mechanical coupling means
- G02B6/38—Mechanical coupling means having fibre to fibre mating means
- G02B6/3807—Dismountable connectors, i.e. comprising plugs
- G02B6/3873—Connectors using guide surfaces for aligning ferrule ends, e.g. tubes, sleeves, V-grooves, rods, pins, balls
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/424—Mounting of the optical light guide
- G02B6/4243—Mounting of the optical light guide into a groove
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12088—Monomode
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12147—Coupler
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
- Optical Couplings Of Light Guides (AREA)
Abstract
The invention discloses an optical fiber array structure coupled with a silicon optical integrated chip, which comprises the following components: the device comprises a waveguide passive chip and a light conduction structure, wherein a V-shaped groove for fixing the light conduction structure is etched on the waveguide passive chip, and the light conduction structure is an optical fiber or an optical fiber ribbon; the size of the optical mode field of the end of the waveguide passive chip coupled with the optical conduction structure is matched with that of a single-mode optical fiber, and the size of the optical mode field of the end coupled with the silicon optical integrated chip is matched with that of a spot-size converter in the silicon optical integrated chip. The waveguide passive chip realizes the mode spot conversion function, the size of the mode field of the optical coupling structure in the silicon optical integrated chip is only required to be matched with the waveguide passive chip, the influence of the mode field of the single-mode optical fiber is avoided, the design and manufacturing difficulty of the optical coupling structure in the silicon optical integrated chip can be reduced, and the optical coupling efficiency is improved.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to an optical fiber array structure coupled with a silicon optical integrated chip.
Background
The silicon-based photoelectric integrated chip based on the silicon photon technology can integrate a plurality of high-speed modulators, a high-speed detector, a beam splitter/combiner, a wavelength division multiplexing/demultiplexing device and other devices, can meet high-capacity communication, and is one of ideal solutions of high-bandwidth, low-power consumption and low-cost high-speed optical interconnection.
The silicon optical integrated chip needs to be optically coupled with the optical fiber array under a plurality of use scenes, so that the optical signal is led in and led out, and the optical coupling effect between the silicon optical integrated chip and the optical fiber array has obvious influence on an optical communication system. The dimensions of the optical waveguides in silicon optical integrated chips are often on the order of hundreds of nanometers in width and height, while the mode field size of single mode fibers is on the order of 8-10um, and this mismatch in dimensions results in significant optical coupling losses. Although the optical mode field can be expanded by designing an optical mode spot-size converter structure on the silicon optical integrated chip, so that the coupling efficiency is improved, the expansion to the magnitude of 8-10um still has great difficulty, and the substrate silicon nearby the spot-size converter structure is often required to be etched by using a cantilever beam structure, so that the process is complex and is not beneficial to the subsequent process development of the silicon optical integrated chip.
Disclosure of Invention
In order to solve the technical problems, the invention provides an optical fiber array structure coupled with a silicon optical integrated chip. The following presents a simplified summary in order to provide a basic understanding of some aspects of the disclosed embodiments. This summary is not an extensive overview and is intended to neither identify key/critical elements nor delineate the scope of such embodiments. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is presented later.
The invention adopts the following technical scheme:
there is provided an optical fiber array structure coupled with a silicon optical integrated chip, comprising: the device comprises a waveguide passive chip and a light conduction structure, wherein a V-shaped groove for fixing the light conduction structure is etched on the waveguide passive chip;
the size of the optical mode field of one end of the waveguide passive chip, which is coupled with the optical conduction structure, is matched with that of a single-mode optical fiber, and the size of the optical mode field of one end of the waveguide passive chip, which is coupled with the silicon optical integrated chip, is matched with that of a spot-size converter in the silicon optical integrated chip;
the light conducting structure is an optical fiber or an optical fiber ribbon.
Further, the waveguide passive chip is provided with one or more of a beam combiner, a beam splitter, a wavelength division multiplexer and a wavelength division demultiplexer.
Further, the waveguide passive chip is a passive chip based on a silicon nitride waveguide/silicon oxynitride waveguide/silicon dioxide waveguide/thick silicon waveguide.
Further, the number of the V-shaped grooves is the same as the number of the optical fibers in the light conduction structure.
Further, the optical fiber array structure coupled with the silicon optical integrated chip further comprises: a cover plate; the coupling end of the optical fiber in the light conduction structure is arranged above the V-shaped groove, and the cover plate presses the front section bare fiber position of the optical fiber and is solidified and bonded by glue.
Further, the waveguide passive chip is also provided with a second coupling structure, an optical waveguide and a third coupling structure; the second coupling structure is used for being optically coupled with the first coupling structure on the silicon optical integrated chip, the third coupling structure is used for being optically coupled with the light conduction structure, and the optical waveguide is used for connecting the second coupling structure with the third coupling structure.
The invention has the beneficial effects that:
1. the waveguide passive chip realizes the mode spot conversion function, the size of the mode field of the optical coupling structure in the silicon optical integrated chip is only required to be matched with the waveguide passive chip, the influence of the mode field of the single-mode optical fiber is avoided, the design and manufacturing difficulty of the optical coupling structure in the silicon optical integrated chip can be reduced, and the optical coupling efficiency is improved;
2. the manufacturing of the optical beam splitting structure can be performed in the waveguide passive chip, so that the problem of bearing the optical power of the silicon optical waveguide is not required to be worried about when the high-power external laser is used, the beam splitting is performed only through the optical beam splitting structure, and then multiple paths of light are led into the silicon optical integrated chip;
3. in the scene that the wavelength division multiplexing/demultiplexing device is needed, the wavelength division multiplexing/demultiplexing function is integrated in the waveguide passive chip, the wavelength division multiplexing/demultiplexing device does not need to be manufactured in the silicon optical integrated chip, and the situation that the performance of the silicon-based optical waveguide type wavelength division multiplexing/demultiplexing device cannot work normally due to the influence of temperature can be avoided.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a silicon optical integrated chip coupled to an optical fiber array structure of the present invention using DR8PIC as an example;
fig. 2 is a schematic diagram of a structure in which a silicon optical integrated chip is coupled to an optical fiber array structure according to the present invention, taking a 2XFR4PIC as an example.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the described embodiments are merely some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1-2, in some illustrative embodiments, the present invention provides a fiber array structure coupled to a silicon optical integrated chip, comprising: a waveguide passive chip 1, a cover plate 2 and a light conducting structure 3.
The waveguide passive chip 1 is used as a substrate of the light conduction structure 3, and is etched with a V-shaped groove 101 for fixing the light conduction structure 3, wherein the light conduction structure 3 is an optical fiber or an optical fiber ribbon, and the optical fiber ribbon is a thin flat ribbon formed by arranging 4-24 optical fibers in parallel and curing by UV.
The waveguide passive chip 1 of the embodiment may also function as a mode spot converter, specifically, the optical mode field size of the end of the waveguide passive chip 1 coupled with the optical conduction structure 3 is matched with the optical mode field of a single mode optical fiber, and the optical mode field size of the end coupled with the silicon optical integrated chip 4 is matched with the optical mode field of the mode spot converter in the silicon optical integrated chip 4.
The number of V-grooves 101 is the same as the number of optical fibers in the light-conducting structure 3. The V-groove 101 is designed to be sized so that the mode field center of the coupling optical waveguide in the waveguide passive chip 1 coincides with the mode field center of the optical fiber.
The coupling end of the optical fiber in the light conduction structure 3 is arranged above the V-shaped groove 101, the cover plate 2 presses the front section bare fiber position of the optical fiber, and the optical fiber is solidified and bonded by glue, so that the structural stability is ensured.
The waveguide passive chip 1 realizes the function of mode spot conversion, so that the size of the mode field of the optical coupling structure in the silicon optical integrated chip 4 is only required to be matched with the waveguide passive chip 1, the influence of the mode field of a single-mode fiber is avoided, the design and manufacturing difficulty of the optical coupling structure in the silicon optical integrated chip 4 can be reduced, and the optical coupling efficiency is improved.
In some illustrative embodiments, the waveguide passive chip 1 may be a passive chip based on a silicon nitride waveguide/silicon oxynitride waveguide/silicon dioxide waveguide/thick silicon waveguide. A thick silicon waveguide refers to a silicon waveguide having a thickness of at least 3 um.
In some illustrative embodiments, the waveguide passive chip 1 is further provided with a second coupling structure 102, an optical waveguide 103, and a third coupling structure 104, where the second coupling structure 102 is used for optical coupling with the first coupling structure 401 on the silicon optical integrated chip, and the third coupling structure 104 is used for optical coupling with the optical conduction structure 3, and the optical waveguide 103 connects the second coupling structure 102 with the third coupling structure 104.
Because the silicon material is affected by two-photon absorption and free carrier absorption effects, the silicon optical integrated chip is difficult to bear larger optical power, so that a high-power external laser cannot be used for guiding light into the silicon optical integrated chip through an optical fiber, and only a larger number of small-power lasers and a larger number of optical fiber arrays with channels can be used, thereby increasing the material cost and the size of the optical engine/module. Meanwhile, due to the fact that the thermal-optical coefficient of the silicon material is large, the performance of certain silicon-based passive waveguide devices (such as silicon fundamental wave multiplexing/demultiplexing and the like) is easily affected by temperature, and therefore the use prospect of the silicon optical integrated chip is limited. Although the addition of a thermal tuning control structure to some passive waveguide devices in a silicon optical integrated chip can solve the problem to a certain extent, the complexity of the use of the chip is increased, and the electrical power consumption is also increased.
In order to solve the above technical problems, the present embodiment is provided with one or more of a beam combiner, a beam splitter, a wavelength division multiplexer, and a wavelength division demultiplexer on the waveguide passive chip 1.
The light beam splitting structure in the waveguide passive chip 1 can split beams through the optical fiber array structure by utilizing a high-power external laser, and then multiple paths of light are led into the silicon optical integrated chip 4, so that the problem of bearing the light power of the silicon optical waveguide is not required to be worried. Meanwhile, the wavelength division multiplexing/demultiplexing function is integrated in the waveguide passive chip 1, so that the condition that the performance of the silicon-based optical waveguide type wavelength division multiplexing/demultiplexing device is affected by temperature and cannot work normally can be avoided.
The core pitch in the fiber array is generally 250um or 127um, and the existence of the fiber array pitch further limits the diameter of the optical fiber, namely the size of the multi-channel high-integration silicon optical integrated chip is limited by the core pitch of the fiber array. The waveguide passive chip of the embodiment has the fan-out function of the optical interfaces, so that the distance between each optical interface in the multichannel high-integration silicon optical integrated chip is not limited by the fiber core spacing of the optical fiber array.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (6)
1. An optical fiber array structure coupled to a silicon optical integrated chip, comprising: the device comprises a waveguide passive chip and a light conduction structure, wherein a V-shaped groove for fixing the light conduction structure is etched on the waveguide passive chip;
the size of the optical mode field of one end of the waveguide passive chip, which is coupled with the optical conduction structure, is matched with that of a single-mode optical fiber, and the size of the optical mode field of one end of the waveguide passive chip, which is coupled with the silicon optical integrated chip, is matched with that of a spot-size converter in the silicon optical integrated chip;
the light conducting structure is an optical fiber or an optical fiber ribbon.
2. The optical fiber array structure coupled with the silicon optical integrated chip according to claim 1, wherein one or more of a beam combiner, a beam splitter, a wavelength division multiplexer and a wavelength division demultiplexer are arranged on the waveguide passive chip.
3. The optical fiber array structure coupled to a silicon optical integrated chip as defined in claim 2, wherein the waveguide passive chip is a passive chip based on a silicon nitride waveguide/silicon oxynitride waveguide/silicon dioxide waveguide/thick silicon waveguide.
4. A fiber array structure coupled to a silicon optical integrated chip as defined in claim 3, wherein the number of V-grooves is the same as the number of fibers in the light conducting structure.
5. The structure of claim 4, further comprising: a cover plate; the coupling end of the optical fiber in the light conduction structure is arranged above the V-shaped groove, and the cover plate presses the front section bare fiber position of the optical fiber and is solidified and bonded by glue.
6. The optical fiber array structure coupled with the silicon optical integrated chip as set forth in claim 5, wherein the waveguide passive chip is further provided with a second coupling structure, an optical waveguide and a third coupling structure;
the second coupling structure is used for being optically coupled with the first coupling structure on the silicon optical integrated chip, the third coupling structure is used for being optically coupled with the light conduction structure, and the optical waveguide is used for connecting the second coupling structure with the third coupling structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202310684205.5A CN116679388A (en) | 2023-06-12 | 2023-06-12 | Optical fiber array structure coupled with silicon optical integrated chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202310684205.5A CN116679388A (en) | 2023-06-12 | 2023-06-12 | Optical fiber array structure coupled with silicon optical integrated chip |
Publications (1)
Publication Number | Publication Date |
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CN116679388A true CN116679388A (en) | 2023-09-01 |
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CN202310684205.5A Pending CN116679388A (en) | 2023-06-12 | 2023-06-12 | Optical fiber array structure coupled with silicon optical integrated chip |
Country Status (1)
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2023
- 2023-06-12 CN CN202310684205.5A patent/CN116679388A/en active Pending
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