CN116655384A - 一种耐高温高熵吸波陶瓷及其制备方法和应用 - Google Patents

一种耐高温高熵吸波陶瓷及其制备方法和应用 Download PDF

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CN116655384A
CN116655384A CN202310665920.4A CN202310665920A CN116655384A CN 116655384 A CN116655384 A CN 116655384A CN 202310665920 A CN202310665920 A CN 202310665920A CN 116655384 A CN116655384 A CN 116655384A
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宋绍雷
苏欣
刘园园
李雁
陈贵武
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Xuzhou University of Technology
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Abstract

本发明涉及陶瓷技术领域，具体为一种耐高温高熵吸波陶瓷及其制备方法和应用，该陶瓷由以下摩尔配比的原料制得包括：氧化铝1份，氧化锆1份，氧化钛1份，氮化硅1份，碳化硼15份；碳化硅1份，碳化钛1份；高熵氧化物1份；硼硅酸铝1份,粘土1份,炭黑1份；有益效果为：本发明提出的将原料粉末在球磨罐中与无水乙醇进行混合，得到混合均匀的料浆，所得料浆进行干燥处理、过筛，得到混合粉末，将粉末进行煅烧，得到陶瓷粉体，混合时间为10～20h，每次将一种原料与无水乙醇混合，进行过滤步骤，然后加入另一种原料，最终将全部原料混合，煅烧温度为2100℃‑2300℃，煅烧时间为3‑4h，煅烧真空度控制为9‑16Pa，增强了氧化物陶瓷的红外发射率。

Description

一种耐高温高熵吸波陶瓷及其制备方法和应用
技术领域
本发明涉及陶瓷技术领域，具体为一种耐高温高熵吸波陶瓷及其制备方法和应用。
背景技术
目前，国内外广泛应用的红外防护材料主要是非氧化物陶瓷，如碳化硅或硼化硅，其红外发射率能够达到0.8至0.9左右，然而，这类非氧化物陶瓷存在抗氧化能力差的问题，无法在高温氧化气氛下长期保持稳定，导致热防护材料的热防护能力下降，影响飞行器服役的可靠性，另一方面，在高温氧化物体系红外辐射材料的开发方面，以堇青石陶瓷，铁酸盐非晶陶瓷，磁铅矿型六铝酸盐陶瓷等为代表的材料也得到了较大的关注，其红外发射率一般处于0.7至0.84之间，但是，总体而言，与碳化硅、硼化硅等非氧化物陶瓷相比，目前氧化物陶瓷在红外发射率方面尚有明显差距。
发明内容
本发明的目的在于提供一种耐高温高熵吸波陶瓷及其制备方法和应用，以解决上述背景技术中提出的问题。
为实现上述目的，本发明提供如下技术方案：一种耐高温高熵吸波陶瓷，该陶瓷由以下摩尔配比的原料制得包括：
氧化铝1份，氧化锆1份，氧化钛1份，氮化硅1份，碳化硼15份；
碳化硅1份，碳化钛1份；
高熵氧化物1份；
硼硅酸铝1份,粘土1份,炭黑1份。
优选的，所述原料组分中氧化铝，氧化锆，氧化钛，氮化硅，碳化硼，碳化硅，碳化钛，高熵氧化物，硼硅酸铝,粘土,炭黑都为粉体。
优选的，所述氧化铝，氧化锆，氧化钛，氮化硅的纯度不低于99％，碳化硼，碳化硅，碳化钛，高熵氧化物的纯度不低于98％，硼硅酸铝,粘土,炭黑的纯度不低于98％，且所有的材料粉体可过150目筛。
优选的，所述氧化铝，氧化锆，氧化钛，氮化硅的颗粒小于2微米，碳化硼，碳化硅，碳化钛，高熵氧化物的颗粒小于3微米，硼硅酸铝,粘土,炭黑的颗粒小于2微米。
优选的，所述耐高温高熵吸波陶瓷最大吸波损耗为25-30dB，最大吸收频带宽为3.2-3.8GHz。
一种耐高温高熵吸波陶瓷的制备方法，包括以下步骤：
步骤一：将原料粉末在球磨罐中与无水乙醇进行混合，得到混合均匀的料浆；
步骤二：所得料浆进行干燥处理、过筛，得到混合粉末，将粉末进行煅烧，得到陶瓷粉体。
优选的，所述步骤1中，混合时间为10～20h。
优选的，所述步骤1多次进行，每次将一种原料与无水乙醇混合，进行过滤步骤，然后加入另一种原料，最终将全部原料混合，之后进行步骤2。
优选的，所述步骤2中，煅烧温度为2100℃-2300℃，煅烧时间为3-4h，步骤2中，煅烧真空度控制为9-16Pa。
一种耐高温高熵吸波陶瓷材料在吸波涂层中的应用。
与现有技术相比，本发明的有益效果是：
本发明提出的将原料粉末在球磨罐中与无水乙醇进行混合，得到混合均匀的料浆，所得料浆进行干燥处理、过筛，得到混合粉末，将粉末进行煅烧，得到陶瓷粉体，混合时间为10～20h，每次将一种原料与无水乙醇混合，进行过滤步骤，然后加入另一种原料，最终将全部原料混合，煅烧温度为2100℃-2300°C，煅烧时间为3-4h，煅烧真空度控制为9-16Pa，增强了氧化物陶瓷的红外发射率。
附图说明
图1为本发明衍射强度示意图；
图2为本发明吸收系数示意图。
具体实施方式
为了使本发明的目的、技术方案进行清楚、完整地描述，及优点更加清楚明白，以下结合附图对本发明实施例进行进一步详细说明。应当理解，此处所描述的具体实施例是本发明一部分实施例，而不是全部的实施例，仅仅用以解释本发明实施例，并不用于限定本发明实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参阅图1至图2，本发明提供一种技术方案：一种耐高温高熵吸波陶瓷，该陶瓷由以下摩尔配比的原料制得包括：氧化铝1份，氧化锆1份，氧化钛1份，氮化硅1份，碳化硼15份；碳化硅1份，碳化钛1份；高熵氧化物1份；硼硅酸铝1份,粘土1份,炭黑1份，原料组分中氧化铝，氧化锆，氧化钛，氮化硅，碳化硼，碳化硅，碳化钛，高熵氧化物，硼硅酸铝,粘土,炭黑都为粉体，氧化铝，氧化锆，氧化钛，氮化硅的纯度不低于99％，碳化硼，碳化硅，碳化钛，高熵氧化物的纯度不低于98％，硼硅酸铝,粘土,炭黑的纯度不低于98％，且所有的材料粉体可过150目筛，氧化铝，氧化锆，氧化钛，氮化硅的颗粒小于2微米，碳化硼，碳化硅，碳化钛，高熵氧化物的颗粒小于3微米，硼硅酸铝,粘土,炭黑的颗粒小于2微米，耐高温高熵吸波陶瓷最大吸波损耗为25-30dB，最大吸收频带宽为3.2-3.8GHz。
一种耐高温高熵吸波陶瓷的制备方法，包括以下步骤：步骤一：将原料粉末在球磨罐中与无水乙醇进行混合，得到混合均匀的料浆；步骤二：所得料浆进行干燥处理、过筛，得到混合粉末，将粉末进行煅烧，得到陶瓷粉体，步骤1中，混合时间为10～20h，步骤1多次进行，每次将一种原料与无水乙醇混合，进行过滤步骤，然后加入另一种原料，最终将全部原料混合，之后进行步骤2，步骤2中，煅烧温度为2100℃-2300℃，煅烧时间为3-4h，步骤2中，煅烧真空度控制为9-16Pa。
尽管上面对本申请说明性的具体实施方式进行了描述，以便于本技术领域的技术人员能够理解本申请，但是本申请不仅限于具体实施方式的范围，对本技术领域的普通技术人员而言，只要各种变化只要在所附的权利要求限定和确定的本申请精神和范围内，一切利用本申请构思的申请创造均在保护之列。

Claims (10)

1.一种耐高温高熵吸波陶瓷，其特征在于：该陶瓷由以下摩尔配比的原料制得包括：
氧化铝1份，氧化锆1份，氧化钛1份，氮化硅1份，碳化硼15份；
碳化硅1份，碳化钛1份；
高熵氧化物1份；
硼硅酸铝1份,粘土1份,炭黑1份。
2.根据权利要求1所述的一种耐高温高熵吸波陶瓷，其特征在于：所述原料组分中氧化铝，氧化锆，氧化钛，氮化硅，碳化硼，碳化硅，碳化钛，高熵氧化物，硼硅酸铝,粘土,炭黑都为粉体。
3.根据权利要求1所述的一种耐高温高熵吸波陶瓷，其特征在于：所述氧化铝，氧化锆，氧化钛，氮化硅的纯度不低于99％，碳化硼，碳化硅，碳化钛，高熵氧化物的纯度不低于98％，硼硅酸铝,粘土,炭黑的纯度不低于98％，且所有的材料粉体可过150目筛。
4.根据权利要求1所述的一种耐高温高熵吸波陶瓷，其特征在于：所述氧化铝，氧化锆，氧化钛，氮化硅的颗粒小于2微米，碳化硼，碳化硅，碳化钛，高熵氧化物的颗粒小于3微米，硼硅酸铝,粘土,炭黑的颗粒小于2微米。
5.根据权利要求1所述的一种耐高温高熵吸波陶瓷，其特征在于：所述耐高温高熵吸波陶瓷最大吸波损耗为25-30dB，最大吸收频带宽为3.2-3.8GHz。
6.根据权利要求1-5中任一项所述的一种耐高温高熵吸波陶瓷的制备方法，包括以下步骤：
步骤一：将原料粉末在球磨罐中与无水乙醇进行混合，得到混合均匀的料浆；
步骤二：所得料浆进行干燥处理、过筛，得到混合粉末，将粉末进行煅烧，得到陶瓷粉体。
7.根据权利要求6所述的一种耐高温高熵吸波陶瓷的制备方法，其特征在于，所述步骤1中，混合时间为10～20h。
8.根据权利要求6所述的一种耐高温高熵吸波陶瓷的制备方法，其特征在于，步骤1多次进行，每次将一种原料与无水乙醇混合，进行过滤步骤，然后加入另一种原料，最终将全部原料混合，之后进行步骤2。
9.根据权利要求6所述的一种耐高温高熵吸波陶瓷的制备方法，其特征在于，所述步骤2中，煅烧温度为2100℃-2300℃，煅烧时间为3-4h，步骤2中，煅烧真空度控制为9-16Pa。
10.权利要求1-5任一项所述的一种耐高温高熵吸波陶瓷材料在吸波涂层中的应用。
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