CN116651192A

CN116651192A - Gas treatment system and gas treatment method using the same

Info

Publication number: CN116651192A
Application number: CN202310150288.XA
Authority: CN
Inventors: 李原秀; 李基文; 李承俊; 张钟山; 韩政佑
Original assignee: Samsung Electronics Co Ltd
Current assignee: Samsung Electronics Co Ltd
Priority date: 2022-02-25
Filing date: 2023-02-22
Publication date: 2023-08-29

Abstract

A gas treatment system and a gas treatment method are provided. A gas treatment system comprising: a first scrubber, a Regenerative Catalytic Oxidation (RCO) that processes gas passing through the first scrubber, a second scrubber that processes gas passing through the regenerative catalytic oxidation, and a Dielectric Barrier Discharge (DBD) plasma reactor that processes gas passing through the second scrubber. The regenerative catalytic oxidation furnace comprises a double-bed regenerative catalytic reactor.

Description

Gas treatment system and gas treatment method using the same

Cross Reference to Related Applications

The present application claims priority from korean patent application No.10-2022-0025547 filed on 25 th 2 of 2022 and korean patent application No.10-2022-0056238 filed on 6 th 5 of 2022, the contents of both of which are incorporated herein by reference in their entireties.

Technical Field

Embodiments of the inventive concept are directed to a gas treatment system and a gas treatment method using the same, and more particularly, to a gas treatment system and a gas treatment method using the same, which can reduce costs and improve efficiency.

Background

The semiconductor device is manufactured by a series of processes. For example, semiconductor devices are fabricated by photolithography processes, etching processes, and deposition processes on wafers. These processes use various chemicals. The chemical substance is discharged in a gaseous state. The chemicals should be properly treated prior to being vented to the atmosphere from the semiconductor processing equipment. Wash towers and catalytic reactors may be used to treat chemicals.

Disclosure of Invention

Some embodiments of the inventive concept provide a gas treatment system that may reduce costs, and a gas treatment method using the same.

Some embodiments of the inventive concept provide a gas treatment system that may increase equipment life, and a gas treatment method using the same.

Some embodiments of the inventive concept provide a gas treatment system that may increase a maintenance period, and a gas treatment method using the same.

According to some embodiments of the inventive concept, a gas treatment system includes: a first scrubber; a regenerative catalytic oxidation furnace (RCO) that processes the gas received from the first scrubber; a second scrubber that processes the gas received from the regenerative catalytic oxidation furnace; and a Dielectric Barrier Discharge (DBD) plasma reactor that processes the gas received from the second scrubber. The regenerative catalytic oxidation furnace comprises a double-bed regenerative catalytic reactor.

According to some embodiments of the inventive concept, a gas treatment system includes: a first scrubber; a Regenerative Catalytic Oxidation (RCO) connected to the first scrubber; and a second scrubber connected to the regenerative catalytic oxidation furnace. The regenerative catalytic oxidation furnace comprises a rotary regenerative catalytic reactor.

According to some embodiments of the inventive concept, a gas treatment system includes: a first scrubber that processes gases exhausted from the semiconductor process chamber; a regenerative catalytic oxidation furnace connected to the first scrubber, wherein the regenerative catalytic oxidation furnace decomposes a Fluorinated Compound (FC) in the gas received from the first scrubber; a second scrubber connected to the regenerative catalytic oxidation furnace, wherein the second scrubber processes the gas received from the regenerative catalytic oxidation furnace; and a Dielectric Barrier Discharge (DBD) plasma reactor connected to the second scrubber.

According to some embodiments of the inventive concept, a gas treatment method includes: treating a gas exhausted from the semiconductor process chamber using a first scrubber; treating the gas passing through the first scrubber using a Regenerative Catalytic Oxidation (RCO); treating the gas passing through the regenerative catalytic oxidation furnace using a second scrubber; and treating the gas passing through the second scrubber using a Dielectric Barrier Discharge (DBD) plasma reactor.

Details of other embodiments are included in the description and the accompanying drawings.

Drawings

Fig. 1 illustrates a gas treatment system according to some embodiments of the inventive concept.

Fig. 2 is a perspective view of a cyclone separator according to some embodiments of the inventive concept.

Fig. 3 is a cross-sectional view of a first scrubber according to some embodiments of the inventive concept.

Fig. 4 is a cross-sectional view of a regenerative catalytic oxidation furnace according to some embodiments of the inventive concept.

Fig. 5 is a sectional view taken along line I-I' of fig. 4.

Fig. 6 is a cross-sectional view of a second scrubber according to some embodiments of the inventive concept.

Fig. 7 is a perspective view of a DBD plasma reactor according to some embodiments of the inventive concept.

Fig. 8 is a perspective view partially illustrating a DBD plasma reactor according to some embodiments of the inventive concept.

Fig. 9 is a flow chart of a gas treatment method according to some embodiments of the inventive concept.

Fig. 10 to 14 show a gas treatment method according to the flow chart of fig. 9.

Fig. 15 illustrates a gas treatment system according to some embodiments of the inventive concept.

Fig. 16 is a cross-sectional view of a regenerative catalytic oxidation furnace according to some embodiments of the inventive concept.

Fig. 17 is a flow chart of a gas treatment method according to some embodiments of the inventive concept.

Fig. 18 shows a gas treatment method according to the flow chart of fig. 17.

Detailed Description

Some embodiments of the inventive concept will now be described with reference to the accompanying drawings. Like reference numerals may denote like components throughout the description.

Referring to fig. 1, in some embodiments, a gas treatment system GT is provided. The gas treatment system GT eliminates harmful substances in the gas. For example, the gas processing system GT eliminates harmful substances in the gas exhausted from the semiconductor process chamber PC. The gas processing system GT is coupled to a semiconductor process chamber PC. The semiconductor process chamber PC performs a process on a substrate or wafer. For example, the substrate is subjected to one or more of an etching process, a deposition process, an exposure process, a coating process, or a cleaning process in the semiconductor process chamber PC.

Various chemicals are used in the semiconductor process chamber PC. Thus, different chemicals are included in the gas exhausted from the semiconductor process chamber PC. For example, a Fluorinated Compound (FC) is included in the gas exhausted from the semiconductor process chamber PC. For example, a gas exhausted from the semiconductor process chamber PC includes a perfluoro compound (PFC) (such as SF ₆ 、CF ₄ Or C ₂ F ₆ One or more of the following). However, embodiments of the inventive concept are not necessarily limited thereto, and different kinds of Fluorinated Compounds (FCs) may be included in the gas discharged from the semiconductor process chamber PC.

The gas processing system GT decomposes Fluorinated Compounds (FC) in the gas exhausted from the semiconductor process chamber PC. However, embodiments of the inventive concept are not necessarily limited thereto, and in some embodiments, the gas treatment system GT is used to treat different substances in a gas. The gas processing system GT includes: cyclone 1, first scrubber 3, regenerative catalytic oxidation furnace (regenerative catalytic oxidizer, RCO) 5, second scrubber 7, and Dielectric Barrier Discharge (DBD) plasma reactor 9. The cyclone 1, the first scrubber 3, the regenerative catalytic oxidation furnace 5, the second scrubber 7, and the DBD plasma reactor 9 are connected to each other through a gas pipe GP. The gas discharged from the semiconductor process chamber PC is treated while passing through the cyclone 1, the first scrubber 3, the regenerative catalytic oxidation furnace 5, the second scrubber 7, and the DBD plasma reactor 9 in this order. A detailed description thereof will be provided further below.

The middle blower 2 is located on the gas pipe GP. The blower 2 accelerates the flow of gas in the gas pipe GP. The middle blower 2 is positioned between the regenerative catalytic oxidation furnace 5 and the second scrubber 7. For example, the middle blower 2 forces the gas received from the regenerative catalytic oxidation furnace 5 to accelerate to flow to the second scrubber 7. A detailed description thereof will be provided further below.

Referring to fig. 2, in some embodiments, the cyclone 1 is connected to the semiconductor process chamber PC of fig. 1. The gas discharged from the semiconductor process chamber PC is introduced into the cyclone 1. The cyclone 1 separates particles PT in the gas. For example, particles PT are separated from the gas passing through the cyclone 1. The cyclone 1 comprises: cyclone body 11, first gas introduction port 13, first gas discharge port 15, particle collector 17, and fan 19.

The gas is introduced into the cyclone body 11 through the first gas introduction port 13. The fan 19 is driven by a motor. The rotation of the fan 19 rotates the gas in the cyclone body 11. As the gas rotates in the cyclone body 11, particles PT in the gas are separated by centrifugal force. The particles separated from the gas fall into a particle collector 17. The gas from which the particles PT are separated is discharged through the first gas outlet port 15.

Although the cyclone 1 forces the particles PT to be separated from the gas, embodiments of the inventive concept are not necessarily limited thereto. For example, in some embodiments, when there are a small amount of particles PT in the gas, the step of separating the particles PT using the cyclone 1 may be omitted.

Referring to fig. 3, in some embodiments, the first scrubber 3 eliminates certain components in the gas. The first scrubber 3 comprises: the first cleaning housing 31, the first cleaning nozzle 33, the first packing member 35, the first nozzle supporting member 37, and the first cleaning water tank 39.

The first cleaning housing 31 provides a first cleaning space 31h extending vertically. The first cleaning space 31h is connected to the first gas pipe GP1 through the first cleaning introduction port 31 i. In addition, the first cleaning space 31h is connected to the second gas pipe GP2 through the first cleaning exit port 31 e. The gas in the first gas pipe GP1 is introduced into the first cleaning housing 31 through the first cleaning introduction port 31 i. The gas rises upward along the first cleaning housing 31. The gas is discharged to the second gas pipe GP2 through the first cleaning discharge port 31 e.

The first cleaning nozzle 33 is located in the first cleaning housing 31. The cleaning nozzle 33 is directed to the firstThe encapsulation member 35 supplies cleaning water. For example, the first cleaning nozzle 33 sprays cleaning water into the gas passing through the first packing member 35. The cleaning water sprayed from the first cleaning nozzle 33 eliminates a specific component in the gas passing through the first cleaning housing 31. For example, the cleaning water will remove HF, HCl or F from the gas ₂ One or more of which are eliminated. The cleaning water is water (H) ₂ O) and/or NaOH in water. A detailed description thereof will be provided further below. A plurality of first cleaning nozzles 33 may be provided. In the following description, a single first cleaning nozzle 33 will be discussed for convenience.

The first packing member 35 is located in the first cleaning housing 31. The first packing member 35 is located below the first cleaning nozzle 33. The first encapsulation member 35 provides a path through which fluid flows. For example, the first encapsulation member 35 provides various flow paths to increase the contact area between the cleaning water and the substances in the gas. The flow path of the one or more gases and/or cleaning water is curved through the first enclosure member 35. Due to the first encapsulation member 35, the contact between the gas and the cleaning water is increased.

The first nozzle support member 37 supports the first cleaning nozzle 33. The first nozzle support member 37 supplies the cleaning water to the first cleaning nozzle 33.

The first cleaning water tank 39 is located below the first cleaning housing 31. The first cleaning water tank 39 collects the cleaning water sprayed from the first cleaning nozzle 33. The cleaning water collected in the first cleaning water tank 39 is supplied again to the first cleaning nozzle 33 through the first water pipe WP 1.

Referring to fig. 4, in some embodiments, the regenerative catalytic oxidation furnace 5 comprises a dual-bed regenerative catalytic reactor. The regenerative catalytic oxidation furnace 5 decomposes a specific component in the gas. For example, the regenerative catalytic oxidation furnace 5 decomposes the Fluorinated Compound (FC) in the gas. The gas is introduced into the regenerative catalytic oxidation furnace 5 through the third gas pipe GP 3. In addition, the gas is discharged from the regenerative catalytic oxidation furnace 5 through the fourth gas pipe GP 4. The regenerative catalytic oxidation furnace 5 includes a first thermal storage medium 511, a first catalytic layer 531, a second thermal storage medium 513, a second catalytic layer 533, a combustion chamber 55, a combustion apparatus 57, a first damper 591, a second damper 593, a third damper 595, and a fourth damper 597.

The first thermal storage medium 511 stores and/or discharges heat. For example, the first thermal storage medium 511 temporarily stores heat. When the gas passing through the first heat storage medium 511 has a temperature less than that of the first heat storage medium 511, the first heat storage medium 511 discharges heat to the gas. When the gas passing through the first heat storage medium 511 has a temperature greater than that of the first heat storage medium 511, the gas discharges heat to the first heat storage medium 511. The first thermal storage medium 511 has a porous structure. For example, the first thermal storage medium 511 has a honeycomb structure, but embodiments of the inventive concept are not necessarily limited thereto. The first thermal storage medium 511 includes an excellent refractory material. For example, the first thermal storage medium 511 includes ceramic.

The first catalytic layer 531 is located above the first thermal storage medium 511. The first catalytic layer 531 includes a catalyst for decomposition reaction of a Fluorinated Compound (FC) in a gas. For example, the first catalytic layer 531 includes Co or ZrO ₂ -Al ₂ O ₃ Embodiments of the inventive concept are not necessarily limited thereto.

The second thermal storage medium 513 is spaced apart from the first thermal storage medium 511 in the horizontal direction. The combustion chamber 55 is located above and in the middle of the second thermal storage medium 513 and the first thermal storage medium 511. The second thermal storage medium 513 includes materials and configurations that are substantially the same as those of the first thermal storage medium 511.

The second catalytic layer 533 is located over the second thermal storage medium 513. The second catalytic layer 533 is spaced apart from the first catalytic layer 531 in the horizontal direction. The second catalytic layer 533 includes substantially the same materials and configurations as the first catalytic layer 531.

The combustion chamber 55 provides a combustion space 55h. The combustion space 55h is located above and between the first catalytic layer 531 and the second catalytic layer 533. Therefore, the gas that has passed through the first catalytic layer 531 flows to the second catalytic layer 533 through the combustion space 55h. The combustion reaction is performed in the combustion chamber 55. The combustion chamber 55 will be described in further detail below.

The combustion apparatus 57 includes a combustion blower 571, a fuel supply 573, and a burner 575. The combustion blower 571 provides air for combustion. Fuel supply 573 provides fuel for combustion. For example, fuel supply 573 provides Liquefied Natural Gas (LNG), hydrocarbon combustion gas, or hydrocarbon replacement combustion gas. The burner 575 induces a combustion reaction using air and fuel. Burner 575 is a plasma-fuel hybrid burner. For example, fuel consumption is reduced. The burner 575 causes a combustion reaction in the combustion chamber 55. Thus, the gas passing through the combustion chamber 55 is heated to a high temperature. Although burner 575 is described for fuel combustion, embodiments of the inventive concept are not necessarily limited thereto. For example, in an embodiment, an electrical heat source is used to combust the fuel.

The first damper 591 is located between the first thermal storage medium 511 and the third gas pipe GP 3. The second damper 593 is located between the first thermal storage medium 511 and the fourth gas pipe GP 4. The third damper 595 is located between the second thermal storage medium 513 and the third gas pipe GP 3. The fourth damper 597 is located between the second thermal storage medium 513 and the fourth gas duct GP 4. A detailed description of the function thereof will be provided below.

Fig. 5 is a sectional view taken along line I-I' of fig. 4.

Referring to fig. 4 and 5, in some embodiments, the combustion chamber 55 includes: an inner wall 551, a steel layer 553, an outer insulation layer 555, a first temperature sensor 5571, a second temperature sensor 5573, and a pressure sensor.

The inner wall 551 encloses the combustion space 55h. The inner wall 551 prevents corrosion of the steel layer 553. The inner wall 551 includes one or more of castable refractory materials and bricks.

A steel layer 553 is coupled to the outside of the inner wall 551. The steel layer 553 surrounds the inner wall 551. The steel layer 553 comprises one of carbon steel or stainless steel. For example, steel layer 553 comprises a 304 series stainless steel. The thickness of the steel layer 553 is dependent on the thickness of the inner wall 551 and the thickness of the outer insulation layer 555, temperature conditions, and/or pressure conditions. To achieve corrosion resistance, the inner wall 551 has a gap of about 3mm thickness.

An outer insulation layer 555 is located outside the steel layer 553. An outer insulation layer 555 surrounds the steel layer 553. The outer insulation 555 is spaced outwardly from the steel layer 553. Accordingly, a heat insulating space 55h2 is formed between the inner surface 555i of the outer heat insulating layer 555 and the outer surface 553e of the steel layer 553.

The first temperature sensor 5571 is coupled to the steel layer 553. The first temperature sensor 5571 detects the temperature of the surface of the steel layer 553. When the first temperature sensor 5571 detects that the temperature of the steel layer 553 has risen to or exceeded a first predetermined value, an abnormal signal occurs.

The second temperature sensor 5573 is located in the adiabatic space 55h 2. The second temperature sensor 5573 detects the temperature of the insulating space 55h 2. When the second temperature sensor 5573 detects that the temperature of the insulating space 55h2 has risen to or exceeded the second predetermined value, an abnormal signal occurs. In an embodiment, the first predetermined value is the same as the second predetermined value. The pressure sensor is located in the insulating space 55h 2. The pressure sensor detects the pressure of the insulation space 55h 2. When the pressure of the insulating space 55h2 deviates from the normal range, an abnormal signal occurs.

Referring to fig. 6, in some embodiments, the gas accelerated by the middle blower 2 is introduced into the second scrubber 7 through the fifth gas pipe GP 5. The gas treated in the second scrubber 7 is discharged from the second scrubber 7 to the sixth gas pipe GP6 through the second clean lead-out port 711 e. The second scrubber 7 cools and/or treats the gas. The second scrubber 7 includes a cleaning portion 71, a cooling portion 73, and a cooling water supply device 75.

The cleaning section 71 processes the gas. The cleaning portion 71 includes: the second cleaning housing 711, the second cleaning nozzle 713, the second packing member 715, the second nozzle support member 717, the second cleaning water tank 719, and the second water pipe WP2. The second cleaning housing 711, the second cleaning nozzle 713, the second packing member 715, the second nozzle support member 717, the second cleaning water tank 719, and the second water pipe WP2 correspond to and are substantially the same as or similar to the first cleaning housing 31, the first cleaning nozzle 33, the first packing member 35, the first nozzle support member 37, the first cleaning water tank 39, and the first water pipe WP1 described with reference to fig. 3, respectively, and thus repetitive descriptions thereof will be omitted.

The cooling portion 73 cools the gas. The cooling portion 73 is located between the cleaning portion 71 and the regenerative catalytic oxidation furnace 5 in fig. 4. The cooling portion 73 cools the gas passing through the regenerative catalytic oxidation furnace 5. The cooling portion 73 includes: a cooling housing 731, a cooling nozzle 733, and a cooling nozzle support member 735. Cooling housing 731 extends longitudinally. The cooling housing 731 is connected to the cleaning introduction port 711i of the cleaning portion 71. For example, a lower portion of the cooling housing 731 is coupled to a lower portion of the second cleaning housing 711. Accordingly, the cooling space in the cooling housing 731 is connected to the second cleaning space 711h provided by the second cleaning housing 711. The cooling nozzle 733 sprays cooling water into the cooling housing 731. Accordingly, the temperature of the gas passing through the cooling housing 731 is reduced. The cooling nozzle support member 735 supports the cooling nozzle 733. The cooling water supply device 75 supplies cooling water to the cooling nozzle 733 through the third water pipe WP 3.

In addition, the cooling portion 73 eliminates impurities in the gas. For example, the cooling water removes a portion of impurities in the gas passing through the cooling portion 73. Accordingly, the load applied to the second cleaning housing 711 can be reduced. Accordingly, the volume of one or more of the second cleaning housing 711, the second cleaning nozzle 713, or the second encapsulation member 715 may be reduced.

Although the cooling water is described as being supplied by the separately provided cooling water supply device 75, embodiments of the inventive concept are not necessarily limited thereto. For example, in some embodiments, the cleaning water in the second cleaning water tank 719 is used as cooling water in the cooling portion 73. For example, the cooling water supply device 75 is not separately provided.

In this description, a symbol D1 denotes a first direction, a symbol D2 denotes a second direction intersecting the first direction D1, and a symbol D3 denotes a third direction intersecting each of the first direction D1 and the second direction D2.

Referring to fig. 7, in some embodiments, the DBD plasma reactor 9 decomposes specific body components in the gas. For example, the DBD plasma reactor 9 decomposes a Fluorinated Compound (FC) in a gas. The DBD plasma reactor 9 includes: a plasma generator 91, a plasma reaction housing 93, a second gas introduction port 95, a second gas discharge port 97, a cooling water introduction port 92, and a cooling water discharge port 94.

The plasma generator 91 extends in the first direction D1. The plasma is generated in the plasma generator 91. As the gas passes through the plasma generator 91, the Fluorinated Compound (FC) is decomposed. A plurality of plasma generators 91 may be provided. The plurality of plasma generators 91 are spaced apart from each other in the second direction D2 and/or the third direction D3. For convenience, a single plasma generator will be described below. The plasma generator 91 will be discussed in further detail below.

A plasma reaction housing 93 encloses the plasma generator 91.

The second gas introduction port 95 is connected to one end of the plasma generator 91. The gas is introduced into the plasma generator 91 through the second gas introduction port 95.

The second gas outlet port 97 is connected to the other end of the plasma generator 91. The gas is exhausted from the plasma generator 91 through the second gas outlet port 97.

The cooling water introduction port 92 is connected to the plasma generator 91. The cooling water is introduced into the plasma generator 91 through the cooling water introduction port 92.

The cooling water outlet port 94 is connected to the plasma generator 91. The cooling water is discharged from the plasma generator 91 through the cooling water discharge port 94.

Although the plasma generator 91 is described as being cooled by cooling water, embodiments of the inventive concept are not necessarily limited thereto. In some embodiments, air is used to cool the plasma generator 91. The plasma generator 91 is an air-cooled type plasma generator.

Fig. 8 is a perspective view of a plasma generator 91 according to some embodiments of the inventive concept.

Referring to fig. 8, in some embodiments, the plasma generator 91 includes an inner electrode 911, an outer electrode 913, a dielectric layer 915, and a cooling tube 917.

The internal electrode 911 extends in the first direction D1. The internal electrode 911 may include steel, but embodiments of the inventive concept are not necessarily limited thereto.

The external electrode 913 extends in the first direction D1. The outer electrode 913 surrounds the inner electrode 911. The external electrode 913 may include steel, but embodiments of the inventive concept are not necessarily limited thereto. The inner surface of the outer electrode 913 is spaced outwardly from the outer surface of the inner electrode 911. Thus, the gas processing path 91h1 is formed between the internal electrode 911 and the external electrode 913. The gas processing path 91h1 is connected to the sixth gas pipe GP6 of fig. 6 through the second gas introduction port 95 of fig. 7 and the second gas discharge port 97 of fig. 7. Thus, the gas treatment path 91h1 is connected to the inner space of the second scrubber 7 of fig. 6.

The dielectric layer 915 extends in the first direction D1. A dielectric layer 915 is located between the inner electrode 911 and the outer electrode 913. For example, the dielectric layer 915 is coupled to the external electrode 913. The dielectric layer 915 includes one or more ceramics or quartz, but embodiments of the inventive concept are not necessarily limited thereto.

The cooling tube 917 extends in the first direction D1. The cooling tube 917 surrounds the external electrode 913. The inner surface of the cooling tube 917 is spaced apart from the outer surface of the external electrode 913. Accordingly, a cooling path 91h2 is formed between the cooling tube 917 and the external electrode 913. One end of the cooling path 91h2 is connected to the cooling water introduction port 92 of fig. 7. The other end of the cooling path 91h2 is connected to the cooling water outlet port 94 of fig. 7. The cooling water flows along the cooling path 91h 2. The cooling water cools the external electrode 913. When the plasma generator 91 is of an air-cooled type, air other than cooling water is provided in the cooling path 91h 2.

Referring to fig. 9, in some embodiments, a gas treatment method S is provided. The gas treatment method S uses the gas treatment system GT of fig. 1 described with reference to fig. 1 to 8. The gas treatment method S includes a step S1 of treating a gas using a cyclone, a step S2 of treating a gas using a first scrubber, a step S3 of treating a gas using a regenerative catalytic oxidation furnace, a step S4 of accelerating a gas introduced into a second scrubber, a step S5 of treating a gas using a second scrubber, and a step S6 of treating a gas using a Dielectric Barrier Discharge (DBD) plasma reactor.

The gas treatment method S of fig. 9 will be described in detail below with reference to fig. 10 to 14.

Referring to fig. 10, in an embodiment, gas EG is exhausted from a semiconductor process chamber PC. The gas EG includes Fluorinated Compounds (FC). The gas EG is introduced into the gas treatment system GT through a gas pipe GP.

Referring to fig. 2, 9 and 10, in an embodiment, step S1 includes separating particles PT from gas EG using cyclone 1. For example, when the fan 19 rotates to force the gas EG to rotate, centrifugal force separates particles PT from the gas EG. The first scrubber 3 receives a gas EG from which particles PT are separated.

Referring to fig. 3, 9 and 10, in an embodiment, step S2 includes removing a specific component in the gas EG in the first scrubber 3. For example, when the gas EG passes through the first cleaning housing 31, the cleaning water sprayed from the first cleaning nozzle 33 eliminates HF, HCl and/or F in the gas EG ₂ One or more of the following. The regenerative catalytic oxidation furnace 5 receives the removed HF, HCl and/or F ₂ One or more gases EG.

Referring to fig. 9 and 11, in an embodiment, step S3 includes opening the first damper 591 and the fourth damper 597. At the same time, the second damper 593 and the third damper 595 are closed. Accordingly, the gas EG passes through the first heat storage medium 511, the first catalytic layer 531, the combustion space 55h, the second catalytic layer 533, and the second heat storage medium 513 in this order.

As the gas EG passes through the first thermal storage medium 511, the temperature of the gas EG increases. When the gas EG having an increased temperature passes through the first catalytic layer 531, the Fluorinated Compound (FC) in the gas EG is decomposed. As the gas EG passes through the combustion space 55h, the combustion flame FL further increases the temperature of the gas EG. As the gas EG passes through the second catalytic layer 533, the Fluorinated Compound (FC) in the gas EG is decomposed. As the gas EG passes through the second thermal storage medium 513, the temperature of the gas EG decreases. The gas EG passing through the second heat storage medium 513 is discharged through the fourth gas pipe GP 4.

Referring to fig. 12, in an embodiment, after a certain time passes, the first damper 591 and the fourth damper 597 are closed. At the same time, the second damper 593 and the third damper 595 are opened. Accordingly, the gas EG passes through the second heat storage medium 513, the second catalytic layer 533, the combustion space 55h, the first catalytic layer 531, and the first heat storage medium 511 in this order. For example, the gas EG flows rearward.

When the gas EG passes through the second heat storage medium 513, the second catalytic layer 533, the combustion space 55h, the first catalytic layer 531, and the first heat storage medium 511 in this order, a reaction similar to that described with reference to fig. 11 occurs. As the gas EG passes through the first thermal storage medium 511, the temperature that the gas EG has decreases. The gas EG passing through the first thermal storage medium 511 is discharged through the fourth gas pipe GP 4.

The gas EG passing through the regenerative catalytic oxidation furnace 5 has a temperature of about 90 ℃ to about 130 ℃. For example, the gas EG passing through the fourth gas pipe GP4 has a temperature of about 120 ℃.

The process described with reference to fig. 11 and the process described with reference to fig. 12 are periodically repeated. For example, the process of fig. 11 and the process of fig. 12 are repeatedly performed at intervals of about 30 minutes. In this way, temperature exchange between the thermal storage medium and the gas is effectively accomplished. In the regenerative catalytic oxidation furnace 5, the Fluorinated Compound (FC) is decomposed into one or more HF and/or F ₂ 。

Referring to fig. 9 and 13, step S4 includes the blower 2 accelerating the gas EG passing through the regenerative catalytic oxidation furnace 5 of fig. 12 in use. The accelerated gas EG is introduced into the second scrubber 7.

Step S5 includes spraying cooling water CW to cool the gas EG using the cooling part 73. As the gas EG passes through the cooling housing 731, the gas EG is cooled by the cooling water CW. For example, after the gas EG passes through the regenerative catalytic oxidation furnace 5 of fig. 12, the gas EG has a temperature of about 90 ℃ to about 130 ℃, and then the cooling water CW cools the gas EG to a temperature of between about 40 ℃ to about 70 ℃. In the range of about 40 deg.c to about 70 deg.c, the cleaning portion 71 is prevented from being damaged. In addition, the cooling water CW eliminates impurities in the gas EG. Accordingly, the load applied to the second cleaning housing 711 is reduced.

Step S5 further includes spraying the cleaning water CL to treat the gas EG using the cleaning part 71. For example, the cleaning water CL sprayed from the second cleaning nozzles 713 eliminates HF, HCl, and/or F in the gas EG ₂ One or more of the following. The gas EG passing through the cleaning portion 71 is discharged through the sixth gas pipe GP 6.

Referring to fig. 9 and 14, step S6 includes flowing the gas EG through the gas treatment path 91h1. In this step, the internal electrode 911 and the external electrode 913 generate plasma. The plasma decomposes the Fluorinated Compound (FC) in the gas EG. For example, the cooling water CW2 flows through the cooling path 91h2. The cooling water CW2 cools the plasma generator 91. Alternatively, when the plasma generator 91 is an air-cooled type plasma generator, air flows through the cooling path 91h2. The plasma generator 91 is cooled by air flowing through the cooling path 91h2.

Referring again to fig. 10, in an embodiment, the gas EG that has passed through the DBD plasma reactor 9 is discharged into the atmosphere.

According to a gas treatment system and a gas treatment method using the same according to some embodiments consistent with the inventive concept, a Dielectric Barrier Discharge (DBD) plasma reactor is used to decompose fluorinated compounds in a gas. Thus, the fluorinated compound that is not decomposed in the regenerative catalytic oxidation furnace is decomposed before the gas is discharged. Therefore, the load of the regenerative catalytic oxidation furnace is reduced. Therefore, the double-bed regenerative catalytic oxidation furnace is used as the regenerative catalytic oxidation furnace. The double-bed regenerative catalytic oxidation furnace has a relatively simplified configuration. Therefore, the service life and maintenance period of the equipment can be improved.

According to the gas treatment system and the gas treatment method using the same according to some embodiments consistent with the present inventive concept, the cooling portion cools the gas before the cleaning portion of the second scrubber receives the gas from the regenerative catalytic oxidation furnace. Therefore, even if the gas discharged from the regenerative catalytic oxidation furnace has a high temperature, the second scrubber can be prevented from being damaged. For example, even if the gas has a high temperature immediately after passing through the regenerative catalytic oxidation furnace, the process can be continuously performed. The regenerative catalytic oxidation furnace emits gas at high temperature. Thus, condensation at the rear end of the regenerative catalytic oxidation furnace is prevented, and thus the equipment is protected.

According to the gas treatment system and the gas treatment method using the same according to some embodiments consistent with the present inventive concept, particles in the gas are previously eliminated before the gas is introduced into the first scrubber. Thus, the first scrubber is prevented from being damaged, and the life of the first scrubber is increased.

Descriptions substantially the same as or similar to those discussed with reference to fig. 1 to 14 may be omitted below.

Referring to fig. 15, in some embodiments, a gas treatment system GTa is provided. Unlike that discussed with reference to fig. 1, the regenerative catalytic oxidation furnace 5a of the gas treatment system GTa comprises a rotary regenerative catalytic reactor. In addition, the gas treatment system GTa further comprises a separator 8 and a bypass pipe 6.

The separator 8 is located between the second scrubber 7 and the DBD plasma reactor 9. The separator 8 separates the gas passing through the second scrubber. One side of the separator 8 is connected to a DBD plasma reactor 9. The other side of the separator 8 is connected to the regenerative catalytic oxidation furnace 5a. For example, the separator 8 is connected to the regenerative catalytic oxidation furnace 5a while the bypass pipe 6 bypasses the second scrubber 7. Thus, a part of the gas passing through the second scrubber 7 is returned to the regenerative catalytic oxidation furnace 5a through the bypass pipe 6. The regenerative catalytic oxidation furnace 5a is purged with the gas flowing through the bypass pipe 6. A detailed description thereof will be provided further below.

Referring to fig. 16, in some embodiments, the regenerative catalytic oxidation furnace 5a includes a combustion chamber 55a, a rotating member 52, a catalytic layer 531a, and a thermal storage medium 511a.

The combustion chamber 55a provides a combustion space 55ah. The gas is introduced from the gas pipe GP3a to the combustion space 55ah and discharged to the gas pipe GP4a. The rotary member 52 rotates about its longitudinal axis. The rotation of the rotation member 52 rotates the gas passing through the combustion space 55ah.

The catalytic layer 531a surrounds the rotary member 52. The catalytic layer 531a comprises a material substantially identical or similar to the material of the first catalytic layer 531 described with reference to fig. 4.

The heat storage medium 511a is located below the catalytic layer 531 a. The heat storage medium 511a surrounds the rotary member 52. The heat storage medium 511a rotates together with the rotating member 52. The thermal storage medium 511a comprises substantially the same or similar materials as the thermal storage medium 511 described with reference to fig. 4. Although the rotary member 52 is described as rotating a gas, embodiments of the inventive concept are not necessarily limited thereto. For example, a valve rotation pattern or any other suitable pattern may be used to rotate the gas through the combustion space 55ah.

Referring to fig. 17, in some embodiments, a gas treatment method Sa may be provided. Unlike the gas treatment method S described with reference to fig. 9, the gas treatment method Sa of fig. 17 further includes a step of receiving a portion of the gas having passed through the second scrubber using a regenerative catalytic oxidation furnace.

A description of steps substantially the same as or similar to those discussed with reference to fig. 9 may be omitted below. Some steps of the gas processing method Sa of fig. 17 will be described below with reference to fig. 18.

Fig. 18 shows a gas treatment method according to the flow chart of fig. 17.

Referring to fig. 17 and 18, in some embodiments, step S3a includes decomposing the Fluorinated Compound (FC) in the gas EG using a rotary-type regenerative catalytic oxidation furnace 5a.

Step S5a includes diverting a portion EG1 of the gas EG to flow to the DBD plasma reactor 9 of fig. 15 using the separator 8, and diverting another portion EG2 of the gas EG to flow to the regenerative catalytic oxidation furnace 5a. A part EG2 of the gas EG flows to the regenerative catalytic oxidation furnace 5a through the bypass pipe 6, and purges the regenerative catalytic oxidation furnace 5a. Although the gas passing through the second scrubber 7 is described as purging the regenerative catalytic oxidation furnace 5a, embodiments of the inventive concept are not necessarily limited thereto. For example, in the embodiment, air is used as the purge heat accumulating catalytic oxidation furnace 5a.

According to the gas treatment system and the gas treatment method using the same according to some embodiments consistent with the present inventive concept, since the gas is accelerated by the middle blower, a portion of the gas passing through the second scrubber is separated and returned to the regenerative catalytic oxidation furnace. Thus, no separate fluid is supplied to purge the regenerative catalytic oxidation furnace. Thus, the system facilities are simplified and the cost is reduced.

According to the gas treatment system and the gas treatment method using the same according to the present inventive concept, costs can be reduced.

According to the gas treatment system and the gas treatment method using the same according to the present inventive concept, the life of equipment can be increased.

According to the gas treatment system and the gas treatment method using the same according to the present inventive concept, the maintenance period can be improved.

The effects of the embodiments of the inventive concept are not limited to the above-mentioned, and other effects not mentioned above will be clearly understood by those skilled in the art from the foregoing description.

Even though embodiments of the inventive concept have been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the technical spirit and essential characteristics of the embodiments of the inventive concept. Accordingly, it will be understood that the above-described embodiments are merely illustrative and not restrictive in all aspects.

Claims

1. A gas treatment system, comprising:

a first scrubber;

a regenerative catalytic oxidation furnace that processes the gas received from the first scrubber;

a second scrubber that processes the gas received from the regenerative catalytic oxidation furnace; and

a dielectric barrier discharge plasma reactor that processes the gas received from the second scrubber;

wherein, the regenerative catalytic oxidation furnace comprises a double-bed regenerative catalytic reactor.

2. The gas treatment system of claim 1, wherein the regenerative catalytic oxidation furnace comprises:

a first thermal storage medium;

a first catalytic layer on the first thermal storage medium;

a second thermal storage medium spaced apart from the first thermal storage medium;

a second catalytic layer on the second thermal storage medium;

a combustion chamber providing a combustion space above and between the first catalytic layer and the second catalytic layer; and

a combustion apparatus.

3. The gas treatment system of claim 2, wherein the combustion chamber comprises:

an inner wall surrounding the combustion space;

a steel layer coupled to an outer side of the inner wall; and

an outer insulating layer surrounding the steel layer,

Wherein the outer insulation layer is spaced outwardly from the steel layer, thereby forming an insulation space between the steel layer and the outer insulation layer.

4. A gas treatment system according to claim 3, wherein the combustion chamber comprises:

a first temperature sensor coupled to the steel layer; and

and a second temperature sensor located in the adiabatic space.

5. The gas treatment system of claim 1, wherein the second scrubber comprises:

a cleaning part spraying cleaning water to treat the gas;

a cooling portion located between the cleaning portion and the regenerative catalytic oxidation furnace,

wherein the cleaning portion includes:

a cleaning housing providing a cleaning space;

a packing member located in the cleaning space; and

a cleaning nozzle spraying the cleaning water into the cleaning space,

wherein the cooling portion includes:

a cooling housing providing a cooling space; and

a cooling nozzle injecting cooling water into the cooling space,

wherein the lower portion of the cooling case and the lower portion of the cleaning case are coupled and connect the cooling space and the cleaning space to each other.

6. The gas treatment system of claim 1, further comprising a cyclone connected to the first scrubber, wherein the cyclone receives the gas exhausted from the semiconductor process chamber and breaks down particles in the gas before the gas flows to the first scrubber.

7. The gas treatment system of claim 1, wherein the dielectric barrier discharge plasma reactor comprises a plasma generator,

wherein the plasma generator comprises:

an internal electrode extending in a first direction; and

an external electrode extending in the first direction and surrounding the internal electrode,

wherein an inner surface of the outer electrode is spaced apart from an outer surface of the inner electrode such that a gas treatment path is formed between the outer electrode and the inner electrode,

wherein the gas treatment path is connected to the interior space of the second scrubber.

8. A gas treatment system, comprising:

a first scrubber;

a regenerative catalytic oxidation furnace connected to the first scrubber; and

a second scrubber connected to the regenerative catalytic oxidation furnace,

Wherein, the regenerative catalytic oxidation furnace comprises a rotary regenerative catalytic reactor.

9. The gas treatment system of claim 8, further comprising a dielectric barrier discharge plasma reactor connected to the second scrubber.

10. The gas treatment system of claim 9, further comprising a separator between the second scrubber and the dielectric barrier discharge plasma reactor,

wherein one side of the separator is connected with the dielectric barrier discharge plasma reactor, and

wherein the other side of the separator is connected to the regenerative catalytic oxidation furnace bypassing the second scrubber.

11. The gas treatment system of claim 8, further comprising a middle blower positioned between the regenerative catalytic oxidation furnace and the second scrubber, wherein the middle blower accelerates the flow of the gas into the second scrubber.

12. The gas treatment system of claim 9, wherein the dielectric barrier discharge plasma reactor comprises a plasma generator,

wherein the plasma generator comprises:

an internal electrode extending in a first direction; and

13. A gas treatment system, comprising:

a first scrubber that processes gases exhausted from the semiconductor process chamber;

a regenerative catalytic oxidation furnace connected to the first scrubber, wherein the regenerative catalytic oxidation furnace decomposes fluorinated compounds in the gas received from the first scrubber;

a second scrubber connected to the regenerative catalytic oxidation furnace, wherein the second scrubber processes the gas received from the regenerative catalytic oxidation furnace; and

a dielectric barrier discharge plasma reactor connected to the second scrubber.

14. The gas treatment system of claim 13, wherein the dielectric barrier discharge plasma reactor comprises a plasma generator,

wherein the plasma generator comprises:

an internal electrode extending in a first direction; and

15. The gas treatment system of claim 14, wherein said plasma generator further comprises a dielectric layer extending in said first direction,

wherein the dielectric layer is located between the inner electrode and the outer electrode.

16. The gas treatment system of claim 14, wherein said plasma generator further comprises a cooling tube extending in said first direction and surrounding said outer electrode,

wherein the inner surface of the cooling tube is spaced apart from the outer surface of the outer electrode such that a cooling path is formed between the cooling tube and the outer electrode.

17. The gas treatment system of claim 14, wherein the plasma generator comprises a plurality of plasma generators,

wherein the plurality of plasma generators are spaced apart from each other in a direction intersecting the first direction.

18. A method of gas treatment comprising:

Treating a gas exhausted from the semiconductor process chamber using a first scrubber;

treating the gas passing through the first scrubber using a regenerative catalytic oxidation furnace;

treating the gas passing through the regenerative catalytic oxidation furnace using a second scrubber; and is also provided with

The gas passing through the second scrubber is treated using a dielectric barrier discharge plasma reactor.

19. The gas treatment method according to claim 18, wherein treating the gas using the regenerative catalytic oxidation furnace comprises:

applying heat to the gas as it passes through the thermal storage medium;

passing the gas passing through the thermal storage medium through a catalytic layer; and is also provided with

The gas passing through the catalytic layer is heated in a combustion chamber.

20. The gas treatment method according to claim 19,

wherein treating the gas using the second scrubber comprises:

injecting cooling water into the gas through a cooling section of the second scrubber; and is also provided with

Injecting clean water through a clean section of the second scrubber into the gas passing through the cool section,

wherein the cooling portion is located between the cleaning portion and the regenerative catalytic oxidation furnace.

21. The gas treatment method according to claim 20, wherein the gas passing through the regenerative catalytic oxidation furnace has a temperature of between 90 ℃ and 130 ℃.

22. The gas treatment process according to claim 18, wherein the dielectric barrier discharge plasma reactor comprises a plasma generator,

wherein the plasma generator comprises:

an internal electrode extending in a first direction; and

wherein the inner surface of the outer electrode is spaced apart from the outer surface of the inner electrode such that a gas treatment path is formed between the outer electrode and the inner electrode, and

wherein treating a gas using the dielectric barrier discharge plasma reactor comprises introducing the gas into the gas treatment path.

23. The gas treatment method according to claim 18, further comprising: the gas received from the regenerative catalytic oxidation furnace is accelerated to flow into the second scrubber by a medium blower.

24. The gas treatment method according to claim 23, wherein,

the regenerative catalytic oxidation furnace comprises a rotary regenerative catalytic oxidation furnace, and

The method further comprises the steps of: a portion of the gas passing through the second scrubber is returned to the regenerative catalytic oxidation furnace.

25. The gas treatment method according to claim 18, wherein the gas discharged from the semiconductor process chamber is treated using a cyclone separator before being treated using the first scrubber,

wherein the cyclone separator uses centrifugal force to separate particles in the gas.