CN116646254A - Packaging carrier plate with high aspect ratio via hole and processing method thereof - Google Patents
Packaging carrier plate with high aspect ratio via hole and processing method thereof Download PDFInfo
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- CN116646254A CN116646254A CN202310632562.7A CN202310632562A CN116646254A CN 116646254 A CN116646254 A CN 116646254A CN 202310632562 A CN202310632562 A CN 202310632562A CN 116646254 A CN116646254 A CN 116646254A
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- 238000003672 processing method Methods 0.000 title claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 303
- 239000010410 layer Substances 0.000 claims description 291
- 229910052802 copper Inorganic materials 0.000 claims description 187
- 239000010949 copper Substances 0.000 claims description 187
- 239000011889 copper foil Substances 0.000 claims description 116
- 238000000034 method Methods 0.000 claims description 97
- 238000009713 electroplating Methods 0.000 claims description 68
- 230000008569 process Effects 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 61
- 238000000151 deposition Methods 0.000 claims description 36
- 238000005553 drilling Methods 0.000 claims description 36
- 230000009467 reduction Effects 0.000 claims description 32
- 239000000047 product Substances 0.000 claims description 28
- 241000784732 Lycaena phlaeas Species 0.000 claims description 27
- 230000008719 thickening Effects 0.000 claims description 19
- 238000007747 plating Methods 0.000 claims description 16
- 239000003292 glue Substances 0.000 claims description 15
- 238000003825 pressing Methods 0.000 claims description 14
- 238000011282 treatment Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 12
- 239000002699 waste material Substances 0.000 claims description 12
- 238000010030 laminating Methods 0.000 claims description 11
- 238000012545 processing Methods 0.000 claims description 10
- 238000007689 inspection Methods 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- 238000004381 surface treatment Methods 0.000 claims description 7
- 238000012360 testing method Methods 0.000 claims description 7
- 238000003466 welding Methods 0.000 claims description 7
- 239000003814 drug Substances 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000007788 roughening Methods 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 5
- 238000007781 pre-processing Methods 0.000 claims description 5
- 238000011946 reduction process Methods 0.000 claims description 4
- 239000011265 semifinished product Substances 0.000 claims description 3
- 238000013532 laser treatment Methods 0.000 claims 1
- 238000013461 design Methods 0.000 description 11
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000009740 moulding (composite fabrication) Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 is exposed Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The application relates to a packaging carrier plate with a high aspect ratio via hole and a processing method thereof. The thickness of the carrier plate obtained by the processing method, namely the thickness of the insulating layer, is not limited, and the requirement of sensitive components on the rigidity of the carrier plate is met.
Description
Technical Field
The application relates to a packaging carrier plate, in particular to a packaging carrier plate with a high aspect ratio via hole and a processing method thereof.
Background
With the continuous development of technology, the wiring density requirement on the packaging substrate is higher and higher, and one development trend is that the product is thin and small in size, so that the packaging space is reduced, and the packaging density is increased; another trend is that the carrier plate medium is thick, the rigidity is good, and the requirement of sensitive components on the rigidity of the carrier plate is met.
With the increasing demand of wiring density, the via hole gradually occupies the flip chip bonding pad or the lead bonding pad, and at this time, certain demand exists for the flatness of the hole site so as to meet the demand of flip chip or lead bonding; in the prior art, three main processes of resin plug hole, namely POFV, blind hole filling electroplating and through hole filling electroplating can be met on the through hole on the bonding pad. The POFV has the defects that the copper thickness is limited, and the copper thickness is generally more than or equal to 25 mu m, so that the design of a fine circuit cannot be satisfied; the defect of blind hole filling electroplating is limited by the dielectric thickness, and the dielectric thickness is commonly used in the field of packaging carrier plates at present, for example, the dielectric thickness is not more than 200 mu m, on one hand, the problem of hole filling sinking cannot be avoided, on the other hand, the copper thickness is difficult to reduce, and the design of a fine circuit cannot be met; the defect of through hole filling electroplating is that firstly, the dielectric thickness is limited, secondly, the through hole is plugged and the copper thickness is thickened more at the same time, in order to meet the design of thin copper, the abrasion reduction process is required to be added after the hole filling electroplating, the uniformity of the copper thickness of the whole plate is poor, and the circuit etching effect is affected.
Disclosure of Invention
In order to overcome the defects, the application provides a processing method of a packaging carrier plate with high aspect ratio through holes, and the thickness of the carrier plate medium thickness, namely the thickness of an insulating layer, obtained by the processing method is not limited, so that the requirement of sensitive components on the rigidity of the carrier plate is met.
The technical scheme adopted by the application for solving the technical problems is as follows:
a processing method of a packaging carrier plate with high aspect ratio through holes comprises the following steps:
preparing a substrate: providing a substrate having a first insulating layer;
first laser pretreatment: pre-processing the substrate so as to facilitate subsequent laser drilling;
first laser drilling: drilling a through hole in the first insulating layer in a laser mode;
removing glue and depositing copper for the first time: removing waste residues generated in the laser process and depositing copper to form a seed layer;
first hole filling electroplating: filling copper in the through hole by using an electroplating method;
microetching copper reduction: microetching and thinning the copper thickness of the surface layer by using chemical liquid medicine, wherein the residual copper thickness is controlled to be 2-6 mu m;
grinding: removing surface copper, only reserving copper plug holes, and roughening the surface of the first insulating layer;
brown chemical: coarsening the copper surface at the plug hole, increasing the binding force of the copper surface and the pressed insulating layer, and reducing the reliability risk;
thickening: pressing a second insulating layer on both sides of the first insulating layer to increase the thickness of the insulating layer and obtain a thickening plate;
and (3) carrying out laser pretreatment for the second time: pre-processing the thickened plate so as to facilitate subsequent laser processing;
and (3) laser drilling for the second time: drilling a blind hole in the second insulating layer by using a laser mode;
removing glue and depositing copper for the second time: removing waste residues generated in the laser process and depositing copper to form a seed layer;
and (3) hole filling electroplating for the second time: filling copper into the blind holes by using an electroplating method to obtain a semi-finished plate;
the following steps: the semi-finished plate is sequentially processed through the following steps: the outer layer circuit, outer layer anti-welding, surface treatment and forming to obtain a finished product carrier plate, finished product testing, finished product inspection and packaging shipment;
wherein, according to the requirement of the thickness of the insulating layer in the finished carrier plate, the microetching copper reduction step can be repeated to the second hole filling electroplating step.
Optionally, in the microetching copper reduction process: the thickness of the residual copper is controlled to be 2-3 mu m; in the second laser drilling process, blind holes on two sides of the through hole are symmetrically arranged along the center point of the through hole, and the thickness of the second insulating layer is smaller than 40 mu m.
Alternatively, after the semi-finished plate is produced by the second hole-filling plating, the semi-finished plate is subjected to the following treatment N times: and finally, carrying out post-process treatment on the semi-finished product plate after the layering to obtain a multi-layer finished product carrier plate, wherein N is more than or equal to 1, and N is an integer.
Optionally, in the process of preparing a substrate, the substrate includes a first insulating layer and first copper foil layers respectively disposed on the front and back sides of the first insulating layer, where the first copper foil layer is a common copper foil layer or an ultrathin copper foil layer, the thickness of the common copper foil layer is 9 μm to 35 μm, and the thickness of the ultrathin copper foil layer is 2 μm to 6 μm;
or alternatively, the first and second heat exchangers may be,
in the process of preparing the substrate, the substrate comprises a first insulating layer and release films pressed on the front surface and the back surface of the first insulating layer, namely the substrate is a non-base copper substrate.
Optionally, when the first copper foil layer is a common copper foil layer, the first laser pretreatment process includes:
microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
and (5) windowing a laser hole: a laser hole is formed in the first copper foil layer in an etching mode for windowing;
or when the first copper foil layer is an ultrathin copper foil layer, the first laser pretreatment process comprises the following steps: LDD browning: coarsening the copper surface, so that laser copper breaking is facilitated;
or when the substrate is an abase copper substrate, the first laser pretreatment process comprises: and stripping the release film.
Optionally, in the first laser drilling, the through hole is an X-shaped hole, a waist diameter of the X-shaped hole is D1, and diameters of two ends of the X-shaped hole are D2, wherein D1 is more than or equal to 30 μm and less than or equal to 0.7×d2.
Optionally, in the thickening step: laminating a second copper foil layer, a second insulating layer, a substrate, a second insulating layer and a second copper foil layer in this order, and then pressing a Cheng Zeng thick plate, wherein the second copper foil layer is a common copper foil layer or an ultrathin copper foil layer, the thickness of the common copper foil layer is 9-35 mu m, and the thickness of the ultrathin copper foil layer is 2-6 mu m;
or, in the thickening step: laminating the second insulating layer, the substrate and the second insulating layer in this order, and then pressing the Cheng Zeng thick plate, wherein the release film is attached to the second insulating layer.
Optionally, when the second copper foil layer is a common copper foil layer, the second laser pretreatment process includes:
microetching copper reduction: reducing copper before electroplating and finally controlling the copper thickness after electroplating;
and (5) windowing a laser hole: forming a laser hole on the second copper foil layer by etching;
or when the second copper foil layer is an ultrathin copper foil layer, the second laser pretreatment process comprises the following steps: LDD browning: coarsening the copper surface, so that laser copper breaking is facilitated;
or when the release film is attached to the second insulating layer, the second laser pretreatment process comprises the following steps: and stripping the release film.
Optionally, in the first photoresist removing and copper depositing process and the second photoresist removing and copper depositing process, the seed layer can be manufactured by adopting a copper depositing process or a measuring and spraying process, and the manufacturing process of the seed layer further comprises a flash plating process.
The application also provides a packaging carrier plate with the high-aspect ratio through holes, which is processed by adopting the processing method of the packaging carrier plate.
The beneficial effects of the application are as follows:
1) The thickness of the wiring copper foil layer in the carrier plate obtained by the processing method can be selected to be proper according to the requirement, and the thickness of the copper foil in the final carrier plate can be less than 10 mu m, so that the problem of limited copper thickness of the traditional POFV process is solved, the manufacturing of fine lines is met, and the obtained product has the characteristics of good rigidity, precise wiring and the like;
2) In the processing method, the X-shaped holes and the layer-by-layer drilling mode are adopted for the through holes, so that the situation that the hole filling pits are too large is prevented, and the problem of poor pits in the traditional through hole or blind hole filling electroplating is solved;
3) According to the processing method, the thickness of the insulating layer can be arbitrarily designed through the thickening step, so that the carrier plate with the thick insulating medium layer and good rigidity is obtained, the requirement of sensitive components on the rigidity of the carrier plate is met, and the problem that the thickness of the conventional through hole filling electroplating medium is limited is solved.
4) The processing method can obtain the double-layer or multi-layer carrier plate with the high aspect ratio via hole, thereby meeting the design requirement of thicker dielectric thick copper via hole and meeting the reliability requirement; meanwhile, the obtained carrier plate has a thinner copper layer, and can meet the requirement of precise wiring.
Drawings
Fig. 1 is a schematic structural diagram of a finished carrier in embodiment 1 of the present application;
FIG. 2 is a schematic diagram of a substrate in embodiment 1 of the present application;
FIG. 3 is a schematic view showing the structure of a thickening plate in embodiment 1 of the present application;
FIG. 4 is a schematic structural view of a semi-finished board according to example 1 of the present application;
fig. 5 is a schematic structural diagram of a finished carrier in embodiment 2 of the present application;
fig. 6 is a schematic structural diagram of a finished carrier in embodiment 3 of the present application;
in the figure: 10-substrate, 11-first insulating layer, 12-first copper foil layer, 13-through hole, 20-thick plate, 21-second insulating layer, 22-second copper foil layer, 30-semi-finished plate, 31-blind hole and 40-carrier plate.
Detailed Description
The technical solutions of the embodiments of the present application will be clearly and completely described below in conjunction with the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
It should be noted that the terms "first," "second," and the like in the description and claims of the present application and in the following figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the objects so used may be interchanged where appropriate such that embodiments of the application described herein may be capable of operation in sequences other than those illustrated or otherwise described. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Spatially relative terms, such as "above … …," "above … …," "upper surface at … …," "above," and the like, may be used herein for ease of description to describe one device or feature's spatial location relative to another device or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "above" or "over" other devices or structures would then be oriented "below" or "beneath" the other devices or structures. Thus, the exemplary term "above … …" may include both orientations of "above … …" and "below … …". The device may also be positioned in other different ways (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.
A processing method of a packaging carrier plate with high aspect ratio through holes comprises the following steps:
preparing a substrate: providing a substrate 10 having a first insulating layer 11;
first laser pretreatment: pre-processing the substrate 10 to facilitate subsequent laser drilling;
first laser drilling: drilling a through hole 13 on the first insulating layer 11 by using a laser mode;
removing glue and depositing copper for the first time: removing waste residues generated in the laser process and depositing copper to form a seed layer;
first hole filling electroplating: filling copper in the through hole 13 by using an electroplating method;
microetching copper reduction: microetching and thinning the copper thickness of the surface layer by using chemical liquid medicine, wherein the residual copper thickness is controlled to be 2-6 mu m;
grinding: removing surface copper, only reserving copper plug holes, and roughening the surface of the first insulating layer 11;
brown chemical: coarsening the copper surface at the plug hole, increasing the binding force of the copper surface and the pressed insulating layer, and reducing the reliability risk;
thickening: pressing the second insulating layer 21 on both sides of the first insulating layer 11 to increase the thickness of the insulating layer, thereby obtaining a thickness-increasing plate 20;
and (3) carrying out laser pretreatment for the second time: pre-processing the build-up plate 20 to facilitate subsequent laser processing;
and (3) laser drilling for the second time: drilling a blind hole 31 in the second insulating layer 21 by using a laser mode;
removing glue and depositing copper for the second time: removing waste residues generated in the laser process and depositing copper to form a seed layer;
and (3) hole filling electroplating for the second time: filling the blind holes 31 with copper by an electroplating method to obtain a semi-finished plate 30;
the following steps: the semifinished sheet 30 is subjected to the following steps in sequence: the outer layer circuit, outer layer anti-welding, surface treatment and molding to obtain a finished product carrier plate 40, finished product testing, finished product inspection and package shipment;
wherein, the microetching copper reduction step can be repeated to the second hole-filling electroplating step according to the thickness requirement of the insulating layer in the finished carrier 40. That is, the first insulating layer may be subjected to a plurality of thickening treatments before the semifinished sheet 30 is subjected to the post-process treatment, and the thickness of the insulating layer refers to the total thickness of the thickened first insulating layer.
In the hole filling electroplating step, electroplating can achieve the following effects: 1) Plugging holes with copper; 2) A layer of copper is plated on the board synchronously.
In the processing method, the thickness of the insulating layer can be arbitrarily designed through the thickening step, so that the carrier plate with thick insulating medium layer and good rigidity is obtained, and the requirement of sensitive components on the rigidity of the carrier plate is met; the thickness of the copper foil layer can be set according to the requirements in the processing method, and a thin copper layer can be obtained, so that the problem that the copper thickness is limited in the traditional process is solved, the manufacturing of a fine circuit is satisfied, and the obtained product has the characteristics of good rigidity, precise wiring and the like; in the processing method, the X-shaped holes and the layer-by-layer drilling mode are adopted for the through holes, so that the occurrence of oversized hole filling recess is prevented, and the problem of poor recess in the conventional through hole or blind hole filling electroplating is solved. The processing method can design the thickening times according to the requirements of products, so that the dielectric thickness of the obtained carrier plate is not limited, the design requirements of thicker dielectric thickness copper plug holes are met, and the reliability requirements of high aspect ratio via holes are met; meanwhile, the obtained carrier plate has a thinner copper layer, and the requirement of precise wiring is met.
In the microetching copper reduction process: the thickness of the residual copper is controlled to be 2-3 mu m; in the second laser drilling process, the blind holes 31 on two sides of the through hole are symmetrically arranged along the center point of the through hole 13, as shown in fig. 3, the blind holes 31 on the upper and lower sides of the through hole are symmetrically arranged along the waist of the through hole 13, and the waist of the through hole refers to the position with the smallest diameter of the X-shaped hole. The thickness of the second insulating layer 21 is less than 40 μm. For the hole filling electroplating process, the thicker the dielectric layer is, the thicker the copper to be electroplated is, so that the design of the wiring layer can be matched with the design requirement of the surface copper according to the design of the wiring of the substrate graph, for example, the thickness of the insulating layer which can be pressed in the previous time is controlled to be smaller than 40 mu m, the design requirement of the finished copper with the thickness smaller than 10 mu m is met, and of course, the method is only illustrative, and in practical application, the proper thickness of the dielectric layer can be selected according to the design requirement of the finished copper with the thickness.
After the semi-finished plate 30 is manufactured by the second hole-filling plating, the semi-finished plate 30 is subjected to the following processing N times: and finally, carrying out post-process treatment on the semi-finished product plate after the layering to obtain a multi-layer finished product carrier plate, wherein N is more than or equal to 1, and N is an integer. When N is equal to 1, the finished carrier plate is a four-layer plate, and the multilayer plate with any layer number can be obtained by analogy, so that the process is suitable for manufacturing the two-layer plate and the multilayer plate, thereby meeting the manufacturing requirements of various carrier plates, namely the carrier plate with two copper foil layers, and the multilayer plate is namely the carrier plate with four or more copper foil layers.
Taking four-layer board as an example: after the semi-finished plate 30 is produced by the second hole-filling plating, the semi-finished plate 30 is sequentially subjected to the following processes: the method comprises the steps of inner layer circuit, browning, lamination and layer adding, microetching and copper reduction, laser windowing, laser blind hole, laser drilling, glue removal and copper deposition, hole filling electroplating, outer layer circuit, outer layer anti-welding, surface treatment and forming to obtain a four-layer finished product carrier plate, finished product testing, finished product inspection and packaging and shipment.
In the process of preparing a substrate, the substrate 10 comprises a first insulating layer 11 and first copper foil layers 12 respectively arranged on the front side and the back side of the first insulating layer 11, wherein the first copper foil layers 12 are common copper foil layers or ultrathin copper foil layers, the thickness of the common copper foil layers is 9-35 μm, and the thickness of the ultrathin copper foil layers is 2-6 μm; alternatively, the thickness of the ordinary copper foil layer is 9 μm, 12 μm, 17 μm, 35 μm, etc., and the thickness of the ultra-thin copper foil layer is 2 μm, 3 μm, 5 μm, etc.;
or alternatively, the first and second heat exchangers may be,
in the process of preparing a substrate, the substrate 10 includes a first insulating layer 11 and release films bonded on the front and back sides of the first insulating layer 11, i.e. the substrate 10 is an electroless copper substrate. Namely, the substrate 10 has the following several states:
1) A base-free copper substrate: namely, the release film is pressed on the two sides of the substrate 10, when the substrate is manufactured, the release film can be directly peeled off, the insulating layer is exposed, and then the insulating layer is directly punched, glue is removed, copper is deposited, and electroplating is carried out to fill the holes with copper and increase the surface copper;
2) Laminating an insulating layer and matching an ultrathin copper foil;
3) The insulating layer is laminated with a common copper foil.
In the practical application process, the type of the substrate can be selected according to the thickness of the insulating layer, for example, the ultra-thick insulating layer can be matched with a release film or an ultra-thin copper foil, and otherwise, the ultra-thick insulating layer can be matched with a common copper foil.
When the first copper foil layer 12 is a common copper foil layer, the first laser pretreatment process includes:
microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
and (5) windowing a laser hole: a laser hole is formed on the first copper foil layer 12 by etching for windowing;
or, when the first copper foil layer 12 is an ultrathin copper foil layer, the first laser pretreatment process includes: LDD browning: coarsening the copper surface, so that laser copper breaking is facilitated;
alternatively, when the substrate 10 is an abase copper substrate, the first laser pretreatment process includes: and stripping the release film. LDD is Laser Direct Drilling, laser direct drilling.
In the first laser drilling, the through hole 13 is an X-shaped hole, the waist diameter of the X-shaped hole is D1, and the diameters of two ends of the X-shaped hole are D2, wherein D1 is more than or equal to 30 μm and less than or equal to 0.7×d2. Namely, the waist diameter of the X-shaped hole is the diameter of the narrowest part of the X-shaped hole, the diameters of the two ends of the X-shaped hole are the diameters of the thickest parts of the X-shaped hole, and the X-shaped hole is designed to be the size so as to facilitate electroplating of the plug hole and prevent excessive hole filling sinking.
In the thickening step: laminating the second copper foil layer 22, the second insulating layer 21, the substrate 10, the second insulating layer 21 and the second copper foil layer 22 in this order, and then pressing into a thick plate 20, wherein the second copper foil layer 22 is a common copper foil layer or an ultrathin copper foil layer, wherein the thickness of the common copper foil layer is 9-35 μm, and the thickness of the ultrathin copper foil layer is 2-6 μm; alternatively, the thickness of the ordinary copper foil layer is 9 μm, 12 μm, 17 μm, 35 μm, etc., and the thickness of the ultra-thin copper foil layer is 2 μm, 3 μm, 5 μm, etc.
Or, in the thickening step: laminating the second insulating layer 21, the substrate 10 and the second insulating layer 21 in this order, and then pressing to form a thick plate 20, wherein a release film is attached to the second insulating layer 21, namely, only the insulating layer is pressed in the step of adding, the release film can be directly peeled off after pressing, a dielectric layer, namely, the insulating layer, is exposed, holes are punched in the diameter of the exposed dielectric layer, and then, the same functions can be realized through glue removal, copper deposition and electroplating processes for hole plating.
When the second copper foil layer 22 is a common copper foil layer, the second laser pretreatment process includes:
microetching copper reduction: reducing copper before electroplating and finally controlling the copper thickness after electroplating;
and (5) windowing a laser hole: forming a laser hole on the second copper foil layer 22 by etching;
or, when the second copper foil layer 22 is an ultra-thin copper foil layer, the second laser pretreatment process includes: LDD browning: coarsening the copper surface, so that laser copper breaking is facilitated;
or, when the release film is attached to the second insulating layer 21, the second laser pretreatment process includes: and stripping the release film. LDD is Laser Direct Drilling, laser direct drilling.
In the first photoresist removing and copper depositing process and the second photoresist removing and copper depositing process, the seed layer can be manufactured by adopting a copper depositing process or a measuring and spraying process, and other common processes can be adopted, so long as the same function is achieved, and the flash plating process is also included after the seed layer is manufactured. The flash plating process is used for plating a copper layer as a bottom layer of hole metallization, which is more beneficial to X-shaped hole filling operation.
A packaging carrier plate with high aspect ratio through holes is processed by adopting the processing method of the packaging carrier plate.
Example 1:
the processing method of the package carrier comprises the following steps:
s1: preparing a substrate: as shown in fig. 2, a substrate 10 is provided, the substrate 10 includes a first insulating layer 11 and first copper foil layers 12 respectively disposed on the front and back sides of the first insulating layer 11, and the first copper foil layers 12 are common copper foil layers with a thickness of 12 μm;
s2: microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
s3: and (5) windowing a laser hole: a laser hole is formed on the first copper foil layer 12 by etching for windowing;
s4: laser X hole: through holes 13 are drilled in the first insulating layer 11 in a laser mode, the through holes 13 are X-shaped holes, the waist diameter of each X-shaped hole is D1, and the diameters of two ends of each X-shaped hole are D2, wherein D1 is more than or equal to 30 mu m and less than or equal to 0.7D 2, so that plug holes are plated conveniently, and excessive hole filling sinking is prevented;
s5: removing glue and depositing copper: removing waste residues generated in the laser process, depositing copper to form a seed layer, and performing flash plating treatment to facilitate X-type Kong Tianping;
s6: hole filling electroplating: filling copper in the through hole 13 by using an electroplating method;
s7: microetching copper reduction: microetching and thinning the copper thickness of the surface layer by using chemical liquid medicine, wherein the residual copper thickness is controlled to be 2-3 mu m;
s8: grinding: removing surface copper, only reserving copper plug holes, and roughening the surface of the insulating layer;
s9: brown chemical: coarsening the copper surface at the plug hole, increasing the binding force of the copper surface and the pressed insulating layer, and reducing the reliability risk;
s10: thickening: as shown in fig. 3, the insulating medium layer is pressed on both sides to increase the thickness of the insulating layer, so as to obtain a thick plate 20, specifically: laminating the second copper foil layer 22, the second insulating layer 21, the substrate 10, the second insulating layer 21 and the second copper foil layer 22 in this order, and then pressing into a thick plate 20, wherein the second copper foil layer 22 adopts a common copper foil layer with the thickness of 12 μm;
s11: microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
s12: and (5) windowing a laser hole: forming a laser hole on the second copper foil layer 22 by etching;
s13: laser drilling: drilling a blind hole 31 in the second insulating layer 21 by using a laser mode;
s14: removing glue and depositing copper: removing waste residues generated in the laser process, depositing copper to form a seed layer, and performing flash plating treatment to facilitate Kong Tianping;
s15: hole filling electroplating: as shown in fig. 4, the blind holes are filled with copper by an electroplating method to obtain a semi-finished board 30;
s16: the following steps: the semifinished sheet 30 is subjected to the following steps in sequence: the outer layer circuit, outer layer anti-welding, surface treatment and molding to obtain a finished product carrier plate 40, finished product testing, finished product inspection and package shipment;
as shown in fig. 1, the carrier plate 40 obtained in this embodiment is a double-layer plate in which the insulating layer is thickened once.
Example 2:
the processing method of the package carrier comprises the following steps:
s1: preparing a substrate: as shown in fig. 2, a substrate 10 is provided, the substrate 10 includes a first insulating layer 11 and first copper foil layers 12 respectively disposed on the front and back sides of the first insulating layer 11, and the first copper foil layers 12 are common copper foil layers with a thickness of 12 μm;
s2: microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
s3: and (5) windowing a laser hole: a laser hole is formed on the first copper foil layer 12 by etching for windowing;
s4: laser X hole: through holes 13 are drilled in the first insulating layer 11 in a laser mode, the through holes 13 are X-shaped holes, the waist diameter of each X-shaped hole is D1, and the diameters of two ends of each X-shaped hole are D2, wherein D1 is more than or equal to 30 mu m and less than or equal to 0.7D 2, so that plug holes are plated conveniently, and excessive hole filling sinking is prevented;
s5: removing glue and depositing copper: removing waste residues generated in the laser process, depositing copper to form a seed layer, and performing flash plating treatment to facilitate X-type Kong Tianping;
s6: hole filling electroplating: filling copper in the through hole 13 by using an electroplating method;
s7: microetching copper reduction: microetching and thinning the copper thickness of the surface layer by using chemical liquid medicine, wherein the residual copper thickness is controlled to be 2-3 mu m;
s8: grinding: removing surface copper, only reserving copper plug holes, and roughening the surface of the insulating layer;
s9: brown chemical: coarsening the copper surface at the plug hole, increasing the binding force of the copper surface and the pressed insulating layer, and reducing the reliability risk;
s10: thickening: as shown in fig. 3, the insulating medium layer is pressed on both sides to increase the thickness of the insulating layer, so as to obtain a thick plate 20, specifically: laminating the second copper foil layer 22, the second insulating layer 21, the substrate 10, the second insulating layer 21 and the second copper foil layer 22 in this order, and then pressing into a thick plate 20, wherein the second copper foil layer 22 adopts a common copper foil layer with the thickness of 12 μm;
s11: microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
s12: and (5) windowing a laser hole: forming a laser hole on the second copper foil layer 22 by etching;
s13: laser drilling: drilling a blind hole 31 in the second insulating layer 21 by using a laser mode;
s14: removing glue and depositing copper: removing waste residues generated in the laser process, depositing copper to form a seed layer, and performing flash plating treatment to facilitate Kong Tianping;
s15: hole filling electroplating: as shown in fig. 4, the blind holes are filled with copper by an electroplating method to obtain a semi-finished board 30;
repeating the steps S7-S15 on the semi-finished plate 30, namely thickening the semi-finished plate 30 once more;
s16: the following steps: the two thickened semifinished sheets 30 are subjected in sequence to the following steps: the outer layer circuit, outer layer anti-welding, surface treatment and molding to obtain a finished product carrier plate 40, finished product testing, finished product inspection and package shipment;
as shown in fig. 5, the carrier plate 40 obtained in this embodiment is a double-layer plate with an insulating layer thickened twice.
Example 3:
the processing method of the package carrier comprises the following steps:
s1: preparing a substrate: as shown in fig. 2, a substrate 10 is provided, the substrate 10 includes a first insulating layer 11 and first copper foil layers 12 respectively disposed on the front and back sides of the first insulating layer 11, and the first copper foil layers 12 are common copper foil layers with a thickness of 12 μm;
s2: microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
s3: and (5) windowing a laser hole: a laser hole is formed on the first copper foil layer 12 by etching for windowing;
s4: laser X hole: through holes 13 are drilled in the first insulating layer 11 in a laser mode, the through holes 13 are X-shaped holes, the waist diameter of each X-shaped hole is D1, and the diameters of two ends of each X-shaped hole are D2, wherein D1 is more than or equal to 30 mu m and less than or equal to 0.7D 2, so that plug holes are plated conveniently, and excessive hole filling sinking is prevented;
s5: removing glue and depositing copper: removing waste residues generated in the laser process, depositing copper to form a seed layer, and performing flash plating treatment to facilitate X-type Kong Tianping;
s6: hole filling electroplating: filling copper in the through hole by using an electroplating method;
s7: microetching copper reduction: microetching and thinning the copper thickness of the surface layer by using chemical liquid medicine, wherein the residual copper thickness is controlled to be 2-3 mu m;
s8: grinding: removing surface copper, only reserving copper plug holes, and roughening the surface of the insulating layer;
s9: brown chemical: coarsening the copper surface at the plug hole, increasing the binding force of the copper surface and the pressed insulating layer, and reducing the reliability risk;
s10: thickening: as shown in fig. 3, the insulating medium layer is pressed on both sides to increase the thickness of the insulating layer, so as to obtain a thick plate 20, specifically: laminating the second copper foil layer 22, the second insulating layer 21, the substrate 10, the second insulating layer 21 and the second copper foil layer 22 in this order, and then pressing into a thick plate 20, wherein the second copper foil layer 22 adopts a common copper foil layer with the thickness of 12 μm;
s11: microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
s12: and (5) windowing a laser hole: forming a laser hole on the second copper foil layer 22 by etching;
s13: laser drilling: drilling a blind hole 31 in the second insulating layer 21 by using a laser mode;
s14: removing glue and depositing copper: removing waste residues generated in the laser process, depositing copper to form a seed layer, and performing flash plating treatment to facilitate Kong Tianping;
s15: hole filling electroplating: as shown in fig. 4, the blind holes are filled with copper by an electroplating method to obtain a semi-finished board 30;
s16: after inner layer circuit and browning treatment are carried out on the semi-finished plate 30, double-sided lamination is carried out on the semi-finished plate 30 to obtain a four-layer plate, and microetching copper reduction, laser windowing, laser blind hole drilling, laser drilling, photoresist removal copper deposition and hole filling electroplating are carried out on the four-layer plate; wherein, two-sided pressfitting specifically does: laminating the second copper foil layer 22, the second insulating layer 21, the semi-finished board 30, the second insulating layer 21 and the second copper foil layer 22 in this order, and then pressing into a laminate having four copper foil layers, wherein the second copper foil layer 22 adopts a common copper foil layer with a thickness of 12 μm;
s17: the following steps: the four-layer plate after hole filling electroplating is sequentially processed by the following steps: the outer layer circuit, outer layer anti-welding, surface treatment and molding to obtain a finished product carrier plate 40, finished product testing, finished product inspection and package shipment;
as shown in fig. 6, the carrier plate 40 obtained in this embodiment is a four-layer plate with a semi-finished plate subjected to a primary build-up process, and the insulating layer in the substrate 10 is subjected to a primary build-up process.
It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. A processing method of a packaging carrier plate with high aspect ratio through holes is characterized by comprising the following steps: the method comprises the following steps:
preparing a substrate: providing a substrate (10) having a first insulating layer (11);
first laser pretreatment: pre-processing the substrate (10) for subsequent laser drilling;
first laser drilling: drilling a through hole (13) on the first insulating layer (11) by using a laser mode;
removing glue and depositing copper for the first time: removing waste residues generated in the laser process and depositing copper to form a seed layer;
first hole filling electroplating: filling copper in the through hole (13) by using an electroplating method;
microetching copper reduction: microetching and thinning the copper thickness of the surface layer by using chemical liquid medicine, wherein the residual copper thickness is controlled to be 2-6 mu m;
grinding: removing surface copper, only reserving copper plug holes, and roughening the surface of the first insulating layer (11);
brown chemical: coarsening the copper surface at the plug hole, increasing the binding force of the copper surface and the pressed insulating layer, and reducing the reliability risk;
thickening: pressing a second insulating layer (21) on both sides of the first insulating layer (11) to increase the thickness of the insulating layer to obtain a thickened plate (20);
and (3) carrying out laser pretreatment for the second time: pre-treating the thickened plate (20) to facilitate subsequent laser treatment;
and (3) laser drilling for the second time: drilling a blind hole (31) in the second insulating layer (21) by using a laser mode;
removing glue and depositing copper for the second time: removing waste residues generated in the laser process and depositing copper to form a seed layer;
and (3) hole filling electroplating for the second time: filling copper into the blind holes (31) by using an electroplating method to obtain a semi-finished board (30);
the following steps: the semi-finished plate (30) is processed by the following steps in sequence: the outer layer circuit, outer layer anti-welding, surface treatment and molding to obtain a finished product carrier plate (40), finished product testing, finished product inspection and package shipment;
wherein, the microetching copper reduction step can be repeated to the second hole filling electroplating step according to the requirement of the thickness of the insulating layer in the finished carrier plate (40).
2. The method of processing a package carrier according to claim 1, wherein: in the microetching copper reduction process: the thickness of the residual copper is controlled to be 2-3 mu m; in the second laser drilling process, blind holes (31) on two sides of the through hole are symmetrically arranged along the center point of the through hole (13), and the thickness of the second insulating layer (21) is smaller than 40 mu m.
3. The method of processing a package carrier according to claim 1, wherein: after the semi-finished plate (30) is produced by the second hole-filling plating, the semi-finished plate (30) is subjected to the following treatment N times: and finally, carrying out post-process treatment on the semi-finished product plate after the layering to obtain a multi-layer finished product carrier plate, wherein N is more than or equal to 1, and N is an integer.
4. The method of processing a package carrier according to claim 1, wherein: in the process of preparing a substrate, the substrate (10) comprises a first insulating layer (11) and first copper foil layers (12) respectively arranged on the front side and the back side of the first insulating layer (11), wherein the first copper foil layers (12) are common copper foil layers or ultrathin copper foil layers, the thickness of the common copper foil layers is 9-35 mu m, and the thickness of the ultrathin copper foil layers is 2-6 mu m;
or alternatively, the first and second heat exchangers may be,
in the process of preparing the substrate, the substrate (10) comprises a first insulating layer (11) and release films pressed on the front surface and the back surface of the first insulating layer (11), namely the substrate (10) is a non-base copper substrate.
5. The method for manufacturing a package carrier according to claim 4, wherein: when the first copper foil layer (12) is a common copper foil layer, the first laser pretreatment process comprises:
microetching copper reduction: reducing the copper thickness before electroplating, and finally controlling the copper thickness after electroplating, and maintaining a thinner state so as to facilitate subsequent copper reduction;
and (5) windowing a laser hole: a laser hole is opened on the first copper foil layer (12) in an etching mode for windowing;
or, when the first copper foil layer (12) is an ultrathin copper foil layer, the first laser pretreatment process comprises: LDD browning: coarsening the copper surface, so that laser copper breaking is facilitated;
or, when the substrate (10) is a copper-free substrate, the first laser pretreatment process includes: and stripping the release film.
6. The method of processing a package carrier according to claim 1, wherein: in the first laser drilling, the through hole (13) is an X-shaped hole, the waist diameter of the X-shaped hole is D1, and the diameters of two ends of the X-shaped hole are D2, wherein D1 is more than or equal to 30 mu m and less than or equal to 0.7D 2.
7. The method of processing a package carrier according to claim 1, wherein: in the thickening step: laminating a second copper foil layer (22), a second insulating layer (21), a substrate (10), the second insulating layer (21) and the second copper foil layer (22) in this order, and then pressing a Cheng Zeng thick plate (20), wherein the second copper foil layer (22) is a common copper foil layer or an ultrathin copper foil layer, the thickness of the common copper foil layer is 9-35 mu m, and the thickness of the ultrathin copper foil layer is 2-6 mu m;
or, in the thickening step: and laminating the second insulating layer (21), the substrate (10) and the second insulating layer (21) in this order, and then pressing the Cheng Zeng thick plate (20), wherein a release film is attached to the second insulating layer (21).
8. The method of processing a package carrier of claim 7, wherein: when the second copper foil layer (22) is a common copper foil layer, the second laser pretreatment process comprises:
microetching copper reduction: reducing copper before electroplating and finally controlling the copper thickness after electroplating;
and (5) windowing a laser hole: a laser hole is opened on the second copper foil layer (22) in an etching mode for windowing;
or, when the second copper foil layer (22) is an ultrathin copper foil layer, the second laser pretreatment process comprises: LDD browning: coarsening the copper surface, so that laser copper breaking is facilitated;
or when the release film is attached to the second insulating layer (21), the second laser pretreatment process comprises the following steps: and stripping the release film.
9. The method of processing a package carrier according to claim 1, wherein: in the first photoresist removing and copper depositing process and the second photoresist removing and copper depositing process, the seed layer can be manufactured by adopting a copper depositing process or a measuring and radiating process, and the seed layer also comprises a flash plating process after the seed layer is manufactured.
10. A package carrier having high aspect ratio vias, comprising: processed by the processing method of the packaging carrier plate according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310632562.7A CN116646254A (en) | 2023-05-31 | 2023-05-31 | Packaging carrier plate with high aspect ratio via hole and processing method thereof |
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| CN202310632562.7A CN116646254A (en) | 2023-05-31 | 2023-05-31 | Packaging carrier plate with high aspect ratio via hole and processing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117881112A (en) * | 2024-03-12 | 2024-04-12 | 四川英创力电子科技股份有限公司 | 28-layer 8-order Ultra HDI and manufacturing method thereof |
| CN117896918A (en) * | 2024-03-13 | 2024-04-16 | 江门市和美精艺电子有限公司 | Manufacturing method of four-layer HDI packaging substrate |
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2023
- 2023-05-31 CN CN202310632562.7A patent/CN116646254A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117881112A (en) * | 2024-03-12 | 2024-04-12 | 四川英创力电子科技股份有限公司 | 28-layer 8-order Ultra HDI and manufacturing method thereof |
| CN117881112B (en) * | 2024-03-12 | 2024-05-07 | 四川英创力电子科技股份有限公司 | 28-Layer 8-order Ultra HDI and manufacturing method thereof |
| CN117896918A (en) * | 2024-03-13 | 2024-04-16 | 江门市和美精艺电子有限公司 | Manufacturing method of four-layer HDI packaging substrate |
| CN117896918B (en) * | 2024-03-13 | 2024-06-11 | 江门市和美精艺电子有限公司 | Manufacturing method of four-layer HDI packaging substrate |
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