CN116631955B - Low-loss high-heat-dissipation packaging structure and method for millimeter wave solid-state power amplifier - Google Patents
Low-loss high-heat-dissipation packaging structure and method for millimeter wave solid-state power amplifier Download PDFInfo
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- CN116631955B CN116631955B CN202310374209.3A CN202310374209A CN116631955B CN 116631955 B CN116631955 B CN 116631955B CN 202310374209 A CN202310374209 A CN 202310374209A CN 116631955 B CN116631955 B CN 116631955B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000005022 packaging material Substances 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910002804 graphite Inorganic materials 0.000 claims description 21
- 239000010439 graphite Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 14
- 238000003466 welding Methods 0.000 claims description 14
- 238000005219 brazing Methods 0.000 claims description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims description 11
- 238000003754 machining Methods 0.000 claims description 10
- 238000004663 powder metallurgy Methods 0.000 claims description 10
- 230000003321 amplification Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 7
- 230000010354 integration Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 230000004927 fusion Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 230000007704 transition Effects 0.000 abstract description 3
- 230000017525 heat dissipation Effects 0.000 description 11
- 239000007787 solid Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910001094 6061 aluminium alloy Inorganic materials 0.000 description 2
- 229910000553 6063 aluminium alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 2
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010892 electric spark Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a low-loss high-heat-dissipation packaging structure and a low-loss high-heat-dissipation packaging method for a millimeter wave solid-state power amplifier. According to the invention, the heat sink of the power amplifier chip and the packaging box body are manufactured into a whole when the packaging material is manufactured, and the power amplifier chip is directly assembled in the heat sink area of the packaging body, so that the first-level transition is reduced. Therefore, the interface between the power amplifier chip heat sink and the assembly packaging box body during assembly is eliminated. The radiating efficiency of the radiating channel of the radio frequency chip is improved, the gap between the heat sink of the radio frequency chip and the packaging box body is eliminated, the transmission performance of the radio frequency channel is improved to a great extent, and the radiating efficiency is mainly characterized in that the high-frequency transmission loss is reduced.
Description
Technical Field
The invention relates to the field of solid-state power amplifier structural design, in particular to a low-loss high-heat-dissipation packaging structure and method of a millimeter wave solid-state power amplifier.
Background
The solid-state power amplifier is widely applied to electronic systems, can amplify small signals, and has amplification factor of hundreds of times. The size of the antenna can be effectively reduced, the physical volume of the electronic system is further reduced, and the flexibility of the system is improved. With the development of communication satellites, the spectrum resources of the low frequency band are increasingly tense, and the advantages of millimeter wave satellite communication are increasingly obvious. Millimeter wave communication has high available bandwidth and large information transmission capacity; meanwhile, a very narrow spot beam can be realized, the antenna gain and the equivalent omni-directional radiation power value are improved, so that the size of a ground antenna is reduced, the miniaturization of a ground terminal is realized, and the method has very important significance for developing mobile communication. Millimeter wave satellite communications place a clear demand for millimeter wave band solid state amplifiers.
Existing millimeter wave solid-state amplifiers are typically fabricated using hybrid integration processes. The assembly adopts a metal packaging mode, the power amplifier chip is generally welded on the heat sink by adopting brazing filler metal with higher heat conductivity, then the heat sink is welded or adhered or mechanically fixed in the packaging box body, and other parts are assembled by adopting a common means of micro-assembly hybrid integration technology, so that the whole power amplifier is finally formed. This mounting mode enables reliable manufacturing for solid state power amplifiers in the low frequency range. When the frequency band of the solid-state amplifier is subjected to millimeter wave band, the influence of the assembly precision on the electrical performance is gradually obvious. The method is mainly characterized in that the influence of the radio frequency channel assembly interface on loss and standing waves is increased, and particularly the assembly interface between the heat sink of the power amplifier chip and the packaging box body is formed. Fig. 1 is a schematic diagram of a mainstream packaging structure of a solid-state power amplifier in the market at present. The heat sink of the power amplifier chip is assembled on the packaging structure body, so that a physical gap is necessarily formed between the periphery of the heat sink and the packaging structure body, and the gap is generally 0.2-0.3 mm. The gap increases transmission loss during transmission of the high frequency microwave signal. Under the current packaging structure, the processing precision and the assembly precision can only be controlled to improve. Under the condition of not changing the packaging structure, the improvement of the radio frequency signal transmission performance brought by improving the processing precision and the assembly precision is limited.
The mainstream solid-state power amplifier of the current engineering application mainly improves the transmission performance of the radio frequency channel of the product from two aspects. Firstly, in the design of a packaging structure, the processing precision and the matching precision of a radio frequency channel are improved as much as possible; and secondly, in the assembly process, automatic assembly is adopted to improve the assembly precision. When the frequency of the solid-state power amplifier reaches the W frequency band, the traditional method for improving the transmission loss of the radio frequency channel by design and assembly plays a less remarkable role.
Disclosure of Invention
Aiming at the defects in the prior art, the low-loss high-heat-dissipation packaging structure and the low-loss high-heat-dissipation packaging method for the millimeter wave solid-state power amplifier solve the problems of heat dissipation and transmission loss of the W-band solid-state power amplifier.
In order to achieve the aim of the invention, the invention adopts the following technical scheme: the utility model provides a millimeter wave solid-state power amplifier low-loss high heat dissipation's packaging structure, includes power amplifier chip and packaging structure body, the power amplifier chip is installed on the heat sink region of packaging structure main part, the material in heat sink region is graphite/copper combined material, and wherein graphite's content is 55% -65%.
Further: the packaging structure main body is manufactured integrally by adopting an aluminum alloy and graphite/copper composite material through a powder metallurgy method.
Further: the laser welding sealing part of the packaging structure main body is made of aluminum alloy, and the thickness of the laser welding sealing part is not less than 1mm.
Further: the thickness of the graphite/copper composite material is not less than 1.5mm, and the length and the width of the graphite/copper composite material are not less than the length and the width of the power amplifier chip.
Further: the power amplifier chip is arranged on the heat sink area in an adhering or brazing mode.
Further: the millimeter wave solid-state power amplifier is characterized by further comprising other parts of the power amplifier assembly, wherein the other parts of the power amplifier assembly and the power amplifier chip form the millimeter wave solid-state power amplifier together, and the assembly mode of the other parts of the power amplifier assembly is carried out by adopting a hybrid integration means, and comprises gold wire welding and resistance-capacitance component brazing.
A packaging method of millimeter wave solid-state power amplifier with low loss and high heat dissipation comprises the following steps:
s1, drawing engineering drawings of the structure by adopting drawing software;
s2, adopting a powder metallurgy or diffusion connection mode to make a packaging structure prototype of the millimeter wave solid-state power amplifier;
s3, machining and forming the millimeter wave solid-state power amplifier packaging structure in a precision machining mode;
s4, plating a metal layer on a required part of the surface layer of the millimeter wave solid power amplifier packaging structure by adopting an electroplating or chemical plating mode;
s5, assembling other parts of the power amplifier assembly and the power amplifier chip into a millimeter wave solid-state power amplifier by utilizing a hybrid integrated circuit assembly means; the power amplifier chip is arranged in a graphite/copper composite material area on the packaging structure body in a brazing or bonding mode;
and S6, performing fusion welding and sealing on the outer cover body of the assembly and the integrated matrix by utilizing a laser welding mode.
Further: the step S2 specifically comprises the following steps: the aluminum alloy and tungsten copper or molybdenum copper alloy are manufactured into an integral packaging material in a powder metallurgy or diffusion connection mode, the material of the part of the packaging material, on which the power amplifier chip is assembled, is manufactured into a graphite/copper composite material, wherein the content of graphite is 55% -65%, and the rest parts are manufactured into the aluminum alloy according to the integral performance requirement of the solid power amplifier component.
The beneficial effects of the invention are as follows: the invention adopts a process route of powder metallurgy or diffusion connection, precise numerical control machine addition brazing or bonding to manufacture the low-loss high-heat-dissipation packaging structure of the millimeter wave solid-state power amplifier. The packaging structure has the greatest characteristics that the heat sink of the power amplifier chip and the packaging box body are manufactured into a whole when the packaging material is manufactured, and the power amplifier chip is directly assembled in the heat sink area of the packaging body, so that the first-level transition is reduced. Therefore, the interface between the power amplifier chip heat sink and the assembly packaging box body during assembly is eliminated. The packaging structure reduces a layer of assembly interface, improves the heat dissipation efficiency of the heat dissipation channel of the radio frequency chip, eliminates the gap between the heat sink of the radio frequency chip and the packaging box body, improves the transmission performance of the radio frequency channel to a great extent, and mainly reduces high-frequency transmission loss. The effect of improving the solid-state power amplification performance and the heat dissipation capacity of millimeter wave bands, particularly W frequency bands is very obvious.
Drawings
FIG. 1 is a schematic diagram of a conventional solid-state power amplifier package;
fig. 2 is a schematic diagram of a solid-state power amplifier package structure according to the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and all the inventions which make use of the inventive concept are protected by the spirit and scope of the present invention as defined and defined in the appended claims to those skilled in the art.
As shown in fig. 2, a package structure of a millimeter wave solid-state power amplifier with low loss and high heat dissipation is manufactured by adopting aluminum alloy as a package structure main body. The power amplifier chip is directly assembled on the packaging structure body without heat sink transition. During the manufacture and mechanical processing of the packaging structure body material, the mounting part of the power amplifier chip is manufactured into a graphite/copper composite material. The volume content of graphite particles in the area is 55% -65%, the thickness is not less than 1.5mm, and the dimension in the XY direction is greater than the outline dimension of the chip by 0.1mm. The power amplifier chip is mounted in the heat sink area in an adhesive or braze welding manner. The assembly mode of the rest parts of the power amplifier assembly is carried out by adopting common means of hybrid integration, including gold wire welding, resistance-capacitance component brazing and the like.
The invention adopts the process route of powder metallurgy, precise numerical control machine addition and brazing or bonding to realize the low-loss and high-heat-dissipation assembly and encapsulation of the millimeter wave solid-state power amplifier.
The package method of millimeter wave solid state power amplifier with low loss and high heat dissipation comprises the following steps: first, drawing engineering drawings of the structure are drawn by drawing software. Secondly, adopting a powder metallurgy or diffusion connection mode to make a millimeter wave solid-state power amplifier packaging structure embryonic form. Thirdly, the millimeter wave solid-state power amplifier packaging structure is processed and molded in a precision processing mode. Fourthly, plating a metal layer on the required part of the surface layer of the millimeter wave solid power amplifier packaging structure by adopting an electroplating or chemical plating mode. Fifthly, components and the like which form the solid-state power amplifier are assembled into the millimeter wave solid-state power amplifier by utilizing a common means of assembling the hybrid integrated circuit. Wherein the power amplifier chip is arranged in a graphite/copper composite material area on the packaging structure body in a brazing or bonding mode. And finally, performing fusion welding and sealing on the outer cover body of the assembly and the integrated matrix by using laser welding and other modes. Thus, the millimeter wave solid-state power amplifier with complete functions is formed.
The packaging structure is integrally manufactured by adopting an aluminum alloy and graphite/copper composite material by a powder metallurgy method.
Based on the packaging material, the invention provides a design method of a packaging structure of a millimeter wave solid-state power amplifier with low loss and high heat dissipation. The method is realized by the following technical processes: drawing, material manufacturing, precise numerical control machining, surface plating and micro-assembly.
Drawing refers to drawing a mechanical manufacturing drawing of the packaging structure by using AutoCAD, CATIA and other tools.
The material manufacturing is to manufacture an aluminum alloy and tungsten copper or molybdenum copper alloy into an integral packaging material by adopting a powder metallurgy or diffusion connection mode, the material of the part of the packaging material, which is provided with the power amplifier chip, is manufactured into a graphite/copper composite material, wherein the content of graphite is 55% -65%, and the rest parts are manufactured into the aluminum alloy according to the integral performance requirement of the solid power amplifier component. The material design on the package body needs to consider the thermal expansion coefficient, the thermal conductivity requirement, the fusion welding tightness requirement and the like of the components mounted on the package body. The method specifically comprises the following steps:
1) The main body material of the packaging structure is preferably 4047, 6061 and 6063 aluminum alloy;
2) The laser welding sealing part of the packaging structure is preferably 6063 or 6061 aluminum alloy, and the thickness is not less than 1mm;
3) The material of the mounting part of the power amplifier chip is designed into a graphite/copper composite material with the graphite content of 55-65 percent, and the thickness is not less than 1.5mm. The dimension of the graphite/copper composite material in the XY direction of the area is not smaller than the dimension of the chip, and the outline dimension is preferably 0.1mm larger than the dimension of the chip;
4) If other components except the power amplifier chip on the packaging structure are assembled in an adhering or brazing mode, the thermal expansion coefficient of the material of the part to be installed is manufactured to be within 7ppm from that of the component.
The precise numerical control machining refers to machining the manufactured material into a packaging structure body by adopting machining process methods such as wire cutting, electric spark machining, milling and the like according to the structural design requirements (including the 4 requirements) of the packaging box body. Thus, the package structure with low loss and high heat dissipation of the millimeter wave solid-state power amplifier is obtained.
The surface plating means that nickel or nickel/gold is plated on the surface of the processed packaging structure by adopting an electroless plating or electroplating mode, so that a surface state capable of being subjected to micro-assembly is obtained.
The micro-assembly refers to the assembly of the power amplifier chip and related components into a solid-state power amplifier product with independent functions by adopting a related method of hybrid integrated circuit assembly and adopting the modes of brazing, bonding, mechanical assembly and the like.
When the heat sink and the packaging structure body of the power amplifier chip are manufactured by materials, the heat sink and the packaging structure body are manufactured into a whole, and then the packaging structure body is formed by machining. There is no interface between the heat sink and the package structure of the power amplifier chip in terms of macroscopic structure and electrical performance. Only the interface with the material composition change on the microcosmic surface of the material is provided, the interface with the material composition change does not influence the loss of radio frequency signal transmission, but the thermal resistance between the heat sink and the packaging structure is reduced, and the heat dissipation efficiency of the power amplifier chip is improved.
Claims (6)
1. The packaging method of the millimeter wave solid-state power amplifier low-loss high-heat-dissipation packaging structure is characterized by comprising the following steps of:
s1, drawing engineering drawings of a packaging structure main body by drawing software;
s2, adopting a powder metallurgy or diffusion connection mode to make a rudiment of the packaging structure main body with the heat sink; wherein, the heat sink and the packaging structure body are manufactured into a whole when being manufactured by materials; there is no interface between the heat sink and the main body of the packaging structure in terms of macroscopic structure and electrical property, and there is only an interface with material composition change in terms of material microcosmic;
s3, machining and forming the embryonic form in a precision machining mode to obtain a packaging structure main body;
s4, plating a metal layer on a required part of the surface layer of the packaging structure by adopting an electroplating or chemical plating mode;
s5, assembling other parts of the power amplifier assembly and the power amplifier chip into a millimeter wave solid-state power amplifier by utilizing a hybrid integrated circuit assembly means; the power amplifier chip is arranged on the heat sink in a brazing or bonding mode;
s6, performing fusion welding and sealing on the outer cover body of the assembly and the integrated matrix by utilizing a laser welding mode;
the heat sink is made of graphite/copper composite material, and the rest parts of the packaging material are made of aluminum alloy according to the overall performance requirement of the solid-state power amplifier assembly to form a packaging structure main body.
2. The packaging method of the millimeter wave solid-state power amplifier low-loss high-heat-dissipation packaging structure according to claim 1, wherein the step S2 is specifically: manufacturing an aluminum alloy and a heat sink into an integral packaging material by adopting a powder metallurgy or diffusion connection mode, and making the packaging material into a rudiment of a packaging structure main body;
in the graphite/copper composite material, the content of graphite is 55% -65%.
3. The package structure manufactured by the package method of the millimeter wave solid-state power amplifier low-loss high-heat-dissipation package structure according to claim 2 is characterized by comprising a power amplification chip and a package structure main body, wherein the power amplification chip is arranged on a heat sink area of the package structure main body, the heat sink area is provided with a heat sink integrally formed with the package structure main body, and the heat sink of the power amplification chip and the package structure main body are manufactured into a whole during manufacturing.
4. The package structure of claim 3, wherein the laser welded sealing portion of the package structure body is an aluminum alloy and has a thickness of not less than 1mm.
5. The package structure of claim 3, wherein the graphite/copper composite material has a thickness of not less than 1.5mm and a length and a width of not less than a length and a width of the power amplifier chip.
6. The packaging structure of claim 3, further comprising other parts of the power amplification assembly, wherein the other parts of the power amplification assembly and the power amplification chip form a millimeter wave solid-state power amplifier together, and the assembly mode of the other parts of the power amplification assembly is carried out by adopting a hybrid integration means, including gold wire welding and resistance-capacitance component brazing.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000150743A (en) * | 1998-11-11 | 2000-05-30 | Furukawa Electric Co Ltd:The | Substrate for semiconductor device and manufacture thereof |
| JP2002184915A (en) * | 2000-12-18 | 2002-06-28 | Hitachi Ltd | Heat radiating system for lsi |
| CN115116992A (en) * | 2021-03-18 | 2022-09-27 | 中国电子科技集团公司第十六研究所 | Aluminum-silicon shell embedded with high-thermal-conductivity material and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000150743A (en) * | 1998-11-11 | 2000-05-30 | Furukawa Electric Co Ltd:The | Substrate for semiconductor device and manufacture thereof |
| JP2002184915A (en) * | 2000-12-18 | 2002-06-28 | Hitachi Ltd | Heat radiating system for lsi |
| CN115116992A (en) * | 2021-03-18 | 2022-09-27 | 中国电子科技集团公司第十六研究所 | Aluminum-silicon shell embedded with high-thermal-conductivity material and preparation method thereof |
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