CN116529571A - 电磁波检测器以及电磁波检测器阵列 - Google Patents

电磁波检测器以及电磁波检测器阵列 Download PDF

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Publication number
CN116529571A
CN116529571A CN202180071357.7A CN202180071357A CN116529571A CN 116529571 A CN116529571 A CN 116529571A CN 202180071357 A CN202180071357 A CN 202180071357A CN 116529571 A CN116529571 A CN 116529571A
Authority
CN
China
Prior art keywords
layer
electromagnetic wave
material layer
wave detector
dimensional material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180071357.7A
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English (en)
Chinese (zh)
Inventor
岛谷政彰
小川新平
福岛昌一郎
奥田聪志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN116529571A publication Critical patent/CN116529571A/zh
Pending legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/0295—Constructional arrangements for removing other types of optical noise or for performing calibration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/08—Measuring electromagnetic field characteristics
    • G01R29/0864—Measuring electromagnetic field characteristics characterised by constructional or functional features
    • G01R29/0878—Sensors; antennas; probes; detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
    • G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
    • G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
    • G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN202180071357.7A 2020-10-26 2021-08-24 电磁波检测器以及电磁波检测器阵列 Pending CN116529571A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020178997 2020-10-26
JP2020-178997 2020-10-26
PCT/JP2021/030923 WO2022091537A1 (ja) 2020-10-26 2021-08-24 電磁波検出器および電磁波検出器アレイ

Publications (1)

Publication Number Publication Date
CN116529571A true CN116529571A (zh) 2023-08-01

Family

ID=81382238

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180071357.7A Pending CN116529571A (zh) 2020-10-26 2021-08-24 电磁波检测器以及电磁波检测器阵列

Country Status (4)

Country Link
US (1) US20230332942A1 (https=)
JP (2) JP7123282B1 (https=)
CN (1) CN116529571A (https=)
WO (1) WO2022091537A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
WO2022190690A1 (ja) * 2021-03-10 2022-09-15 富士フイルム株式会社 光学変調素子、光シャッタおよび光変調方法
CN115483225B (zh) * 2022-08-08 2026-04-17 西安电子科技大学 一种横向同质异质结存储器器件及制备方法
US12468074B2 (en) * 2023-12-20 2025-11-11 Toyota Motor Engineering & Manufacturing North America, Inc. Plasmonic borophene nanoribbon metal-insulator-metal structure for quantum imaging

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102255301B1 (ko) * 2014-05-19 2021-05-24 삼성전자주식회사 강유전성 물질을 포함하는 광전자소자
KR102237826B1 (ko) * 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
WO2018012076A1 (ja) * 2016-07-12 2018-01-18 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
CN106784122B (zh) * 2016-12-01 2018-06-22 浙江大学 基于石墨烯/掺硼硅量子点/硅的光电探测器及制备方法
JP6918591B2 (ja) * 2017-06-16 2021-08-11 株式会社豊田中央研究所 電磁波検出器およびその製造方法
KR102561102B1 (ko) * 2018-02-13 2023-07-28 삼성전자주식회사 2차원 절연체를 포함하는 근적외선 센서
CN112292763B (zh) * 2018-06-26 2024-04-05 三菱电机株式会社 电磁波检测器以及电磁波检测器阵列
CN112272869B (zh) * 2018-06-28 2024-03-15 三菱电机株式会社 使用石墨烯的电子器件、该使用石墨烯的电子器件的制造方法以及具备该使用石墨烯的电子器件的电磁波检测器
US12189267B2 (en) * 2019-06-20 2025-01-07 Mitsubishi Electric Corporation Reflective optical device

Also Published As

Publication number Publication date
JP2022110034A (ja) 2022-07-28
JPWO2022091537A1 (https=) 2022-05-05
WO2022091537A1 (ja) 2022-05-05
JP7345593B2 (ja) 2023-09-15
US20230332942A1 (en) 2023-10-19
JP7123282B1 (ja) 2022-08-22

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