CN116520902B - Control method and equipment for pressure of semiconductor chamber with magnetic suspension device - Google Patents
Control method and equipment for pressure of semiconductor chamber with magnetic suspension device Download PDFInfo
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- CN116520902B CN116520902B CN202310775387.7A CN202310775387A CN116520902B CN 116520902 B CN116520902 B CN 116520902B CN 202310775387 A CN202310775387 A CN 202310775387A CN 116520902 B CN116520902 B CN 116520902B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 199
- 239000000725 suspension Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims abstract description 59
- 238000005339 levitation Methods 0.000 claims abstract description 110
- 230000003247 decreasing effect Effects 0.000 claims description 13
- 238000004891 communication Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 23
- 230000007423 decrease Effects 0.000 abstract description 8
- 230000001276 controlling effect Effects 0.000 description 12
- 230000009467 reduction Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000006837 decompression Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D16/00—Control of fluid pressure
- G05D16/20—Control of fluid pressure characterised by the use of electric means
- G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
- G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides a control method and equipment for pressure of a semiconductor chamber with a magnetic suspension device, which belongs to the technical field of semiconductor equipment, wherein the semiconductor chamber with the magnetic suspension device is provided with an air inlet and an air outlet, the air inlet is communicated with an air inlet proportional valve, and the air outlet is communicated with an air exhaust proportional valve; the control method for the pressure of the semiconductor chamber with the magnetic levitation device comprises the following steps: simultaneously adjusting the opening degrees of the air inlet proportional valve and the air outlet proportional valve to enable the pressure of the cavity to reach the first pressure from the initial pressure; and the opening degree of the air inlet proportional valve and the opening degree of the air outlet proportional valve are respectively and independently adjusted in the sub-dividing stage, so that the pressure in the cavity sequentially reaches the second pressure and the target pressure. The application realizes the rapid and stable increase or decrease of the internal pressure of the semiconductor chamber with the magnetic suspension device, and ensures the stable increase or decrease of the pressure in the whole pressurizing or depressurizing process.
Description
Technical Field
The application belongs to the technical field of semiconductor equipment, and particularly relates to a method and equipment for controlling the pressure of a semiconductor cavity with a magnetic suspension device.
Background
Semiconductor devices often require continuous regulation of chamber internal pressure during processing, which may involve rapid pressurization or depressurization, based on a process pressure. Currently, a mass flow controller is typically used to regulate the flow of intake air to a chamber to achieve pressurization or depressurization. Because the mass flow controller needs to ensure accurate control of the air inlet flow of the chamber, the air inlet pipe diameter is smaller, the time for realizing stable pressurization or depressurization is longer, the device is simple and applicable to pressurization or depressurization in a small pressure range, but the device is not easy to meet the requirements under the conditions of high rapid increase or decrease and high stability requirements of large-range pressure (for example, 0Torr to 1000 Torr), for example, when the magnetic levitation device is contained in the chamber, the stability of pressure regulation is important, and on one hand, the position of a processed object in the magnetic levitation device in the radial direction or the axial direction is directly influenced; on the other hand, may affect the transfer of the object being processed between the process chamber and the transfer chamber.
Disclosure of Invention
Based on the technical problems in the prior art, the application provides a control method and equipment for the pressure of a semiconductor chamber with a magnetic suspension device, which are used for solving the technical problems that the adoption of a mass flow controller cannot meet the requirements of quick and stable control under the condition of carrying out large-range pressurization or depressurization on the inside of the chamber in the prior art.
In order to achieve the above purpose, the present application adopts the following technical scheme.
In a first aspect, there is provided a control method for a pressure of a semiconductor chamber having a magnetic levitation device, the semiconductor chamber having an air inlet and an air outlet, the air inlet being in communication with an air inlet proportional valve, the air outlet being in communication with an air outlet proportional valve, the control method comprising: simultaneously adjusting the opening of an air inlet proportional valve and an air outlet proportional valve to enable the pressure of a semiconductor chamber with a magnetic suspension device to reach a first pressure from an initial pressure; stopping adjusting the opening of the air inlet proportional valve and continuously adjusting the opening of the air outlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the first pressure, stopping adjusting the opening of the air outlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the second pressure, and starting adjusting the opening of the air inlet proportional valve to enable the pressure for the semiconductor chamber with the magnetic suspension device to reach the target pressure; or stopping adjusting the opening of the exhaust proportional valve and continuously adjusting the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the first pressure, stopping adjusting the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the second pressure, starting adjusting the opening of the exhaust proportional valve, and enabling the pressure for the semiconductor chamber with the magnetic suspension device to reach the target pressure; wherein the first pressure and the second pressure are between the initial pressure and the target pressure, and the first pressure is also between the initial pressure and the second pressure.
Optionally, simultaneously adjusting the opening degrees of the air inlet proportional valve and the air outlet proportional valve to enable the pressure of the semiconductor chamber with the magnetic suspension device to reach the first pressure from the initial pressure, including: simultaneously increasing the opening degrees of an air inlet proportional valve and an air outlet proportional valve, so that the pressure of a semiconductor chamber with a magnetic suspension device is increased from an initial pressure to a first pressure, wherein the initial pressure is smaller than the first pressure; or simultaneously reducing the opening degrees of the air inlet proportional valve and the air outlet proportional valve, so that the pressure of the semiconductor chamber with the magnetic suspension device is reduced from the initial pressure to the first pressure, and the initial pressure is higher than the first pressure.
Alternatively, when the opening degrees of the intake proportional valve and the exhaust proportional valve are simultaneously increased, the difference between the current opening degree value of the intake proportional valve and the initial opening degree value of the intake proportional valve is larger than the difference between the current opening degree value of the exhaust proportional valve and the initial opening degree value of the exhaust proportional valve when the pressure for the semiconductor chamber having the magnetic levitation device is increased from the initial pressure to the first pressure.
Optionally, when the opening degrees of the air intake proportional valve and the air exhaust proportional valve are simultaneously increased, and the pressure of the semiconductor chamber with the magnetic suspension device is increased from the initial pressure to the first pressure, stopping adjusting the opening degree of the air intake proportional valve and continuing to adjust the opening degree of the air exhaust proportional valve, and when the pressure of the semiconductor chamber with the magnetic suspension device reaches the second pressure, stopping adjusting the opening degree of the air exhaust proportional valve, starting adjusting the opening degree of the air intake proportional valve, and enabling the pressure of the semiconductor chamber with the magnetic suspension device to reach the target pressure, wherein the method comprises the following steps: stopping increasing the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the first pressure, continuously reducing the opening of the air outlet proportional valve, and increasing the pressure for the semiconductor chamber with the magnetic suspension device to the second pressure; stopping reducing the opening of the exhaust proportional valve when the pressure for the semiconductor chamber with the magnetic levitation device reaches the second pressure, starting increasing the opening of the intake proportional valve, and increasing the pressure for the semiconductor chamber with the magnetic levitation device to the target pressure; wherein the first pressure < the second pressure < the target pressure.
Alternatively, when the pressure for the semiconductor chamber having the magnetic levitation device reaches the second pressure, stopping decreasing the opening of the exhaust proportional valve, starting increasing the opening of the intake proportional valve, and increasing the pressure for the semiconductor chamber having the magnetic levitation device to the target pressure, comprising: and adjusting the opening degree of the air inlet proportional valve by adopting a proportional integral derivative control program according to the difference value between the target pressure and the second pressure.
Alternatively, when the opening degrees of the intake proportional valve and the exhaust proportional valve are simultaneously reduced, and the pressure for the semiconductor chamber having the magnetic levitation device is reduced from the initial pressure to the first pressure, the difference between the initial opening degree value of the intake proportional valve and the current opening degree value of the intake proportional valve is smaller than the difference between the initial opening degree value of the exhaust proportional valve and the current opening degree value of the exhaust proportional valve.
Optionally, when the opening degrees of the air intake proportional valve and the air exhaust proportional valve are simultaneously reduced, and the pressure of the semiconductor chamber with the magnetic suspension device is reduced from the initial pressure to the first pressure, stopping adjusting the opening degree of the air exhaust proportional valve and continuing to adjust the opening degree of the air intake proportional valve, and when the pressure of the semiconductor chamber with the magnetic suspension device reaches the second pressure, stopping adjusting the opening degree of the air intake proportional valve, starting adjusting the opening degree of the air exhaust proportional valve, and enabling the pressure of the semiconductor chamber with the magnetic suspension device to reach the target pressure, wherein the method comprises the following steps: stopping reducing the opening of the exhaust proportional valve when the pressure for the semiconductor chamber with the magnetic levitation device reaches the first pressure, continuously reducing the opening of the air inlet proportional valve, and reducing the pressure for the semiconductor chamber with the magnetic levitation device to the second pressure; stopping reducing the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the second pressure, starting to increase the opening of the air outlet proportional valve, and reducing the pressure for the semiconductor chamber with the magnetic suspension device to the target pressure; wherein the first pressure > the second pressure > the target pressure.
Optionally, when the pressure for the semiconductor chamber with the magnetic levitation device reaches the second pressure, stopping decreasing the opening of the air intake proportional valve, starting increasing the opening of the air exhaust proportional valve, and reducing the pressure for the semiconductor chamber with the magnetic levitation device to the target pressure, including: and adjusting the opening degree of the exhaust proportional valve by adopting a proportional integral derivative control program according to the difference value between the target pressure and the second pressure.
In a second aspect, there is provided a control apparatus for semiconductor chamber pressure, which is suitable for the above control method for semiconductor chamber pressure with magnetic levitation device, the control apparatus comprising a controller, a pressure sensing unit, an air intake proportional valve, an air exhaust proportional valve, a vacuum pump, and a semiconductor chamber with magnetic levitation device, the semiconductor chamber with magnetic levitation device having an air intake port and an air exhaust port; the pressure sensing unit is arranged inside the semiconductor chamber with the magnetic suspension device and is used for measuring the pressure inside the semiconductor chamber with the magnetic suspension device; the air inlet is communicated with an air inlet proportional valve, and the air inlet proportional valve is used for controlling the flow of air flowing into a semiconductor chamber with a magnetic suspension device through the air inlet; the exhaust port is communicated with an exhaust proportional valve, and the exhaust proportional valve is used for controlling the flow of gas flowing out of the semiconductor chamber with the magnetic suspension device through the exhaust port; the vacuum pump is communicated with the exhaust proportional valve and is used for vacuumizing a semiconductor cavity with the magnetic suspension device; the pressure sensing unit, the air inlet proportional valve and the air outlet proportional valve are respectively and electrically connected with the controller.
Optionally, the pressure sensing unit includes a low pressure sensor and a high pressure sensor, and the low pressure sensor and the high pressure sensor are respectively connected with the controller.
Compared with the prior art, the application provides a control method and equipment for the pressure of a semiconductor chamber with a magnetic suspension device, which have the beneficial effects that:
1. according to the application, the air inlet and the air outlet of the cavity are respectively communicated with the air inlet proportional valve and the air outlet proportional valve, and the target pressure is increased or reduced in stages, so that the pressure in the cavity is regulated in a way of independently and jointly regulating the opening degrees of the air inlet proportional valve and the air outlet proportional valve in stages.
2. The application can realize the rapid and stable increase or decrease of the internal pressure of the cavity, avoid the abrupt increase or drop of the internal pressure of the cavity, and ensure the stable increase or drop of the pressure in the whole pressurizing or depressurizing process.
Additional aspects and advantages of the application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the application.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flow chart of a method for controlling pressure in a semiconductor chamber having a magnetic levitation device according to the present application.
Fig. 2 is a schematic structural view of an apparatus for a method of controlling pressure of a semiconductor chamber having a magnetic levitation device according to the present application.
Fig. 3 is a schematic diagram of a pressurization flow in a method for controlling the pressure of a semiconductor chamber with a magnetic levitation device according to the present application.
Fig. 4 is a schematic diagram showing the opening degree adjustment trend of the intake air proportional valve at the time of supercharging according to the present application.
Fig. 5 is a schematic diagram showing the opening degree adjustment trend of the exhaust gas proportional valve at the time of supercharging according to the present application.
FIG. 6 is a graph showing the trend of the target pressure of the chamber during pressurization according to the present application.
Fig. 7 is a schematic diagram of a depressurization flow chart in a control method for the pressure of a semiconductor chamber having a magnetic levitation device according to the present application.
Fig. 8 is a schematic diagram showing the opening degree adjustment trend of the intake air proportional valve at the time of decompression according to the present application.
Fig. 9 is a schematic diagram showing the opening degree adjustment trend of the exhaust gas proportional valve at the time of decompression according to the present application.
FIG. 10 is a graph showing the trend of the target pressure of the chamber during the pressure reduction according to the present application.
Reference numerals:
1. a chamber; 2. an intake proportional valve; 3. an exhaust proportional valve; 4. a vacuum pump; 5. a controller; 6. a low pressure sensor; 7. a high pressure sensor; 8. a magnetic levitation device; 9. an object to be processed.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element. Embodiments of the application and features of the embodiments may be combined with each other without conflict. The application will be described in detail below with reference to the drawings in connection with embodiments.
It is to be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are merely for convenience in describing and simplifying the description based on the orientation or positional relationship shown in the drawings, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus are not to be construed as limiting the application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "plurality" is two or more unless specifically defined otherwise.
As described in the background art, at present, in the process of the semiconductor device, the pressure in the chamber of the semiconductor device is usually increased or reduced by adjusting the air inlet flow by adopting a mass flow controller, but the air inlet pipe diameter of the mass flow controller is smaller, the time for realizing stable pressure increase or pressure reduction is longer, the semiconductor device is simple and applicable to pressure increase or pressure reduction in a small pressure range, and the requirements cannot be easily met under the conditions of high requirements on the rapid type and stability of large-scale pressure increase or reduction, for example, when a magnetic suspension device is contained in the chamber, the stability of pressure adjustment is important, and on one hand, the position of a processed object in the magnetic suspension device in the radial direction or the axial direction is directly influenced; on the other hand, may affect the transfer of the object being processed between the process chamber and the transfer chamber.
The application provides a control method for the pressure of a semiconductor chamber with a magnetic suspension device, which is used for the semiconductor chamber with the magnetic suspension device and comprises an air inlet and an air outlet, wherein the air inlet is communicated with an air inlet proportional valve, and the air outlet is communicated with an air outlet proportional valve, and the control method comprises the following steps: simultaneously adjusting the opening of an air inlet proportional valve and an air outlet proportional valve to enable the pressure of a semiconductor chamber with a magnetic suspension device to reach a first pressure from an initial pressure; stopping adjusting the opening of the air inlet proportional valve and continuously adjusting the opening of the air outlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the first pressure, stopping adjusting the opening of the air outlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the second pressure, and starting adjusting the opening of the air inlet proportional valve to enable the pressure for the semiconductor chamber with the magnetic suspension device to reach the target pressure; or stopping adjusting the opening of the exhaust proportional valve and continuously adjusting the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the first pressure, stopping adjusting the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the second pressure, starting adjusting the opening of the exhaust proportional valve, and enabling the pressure for the semiconductor chamber with the magnetic suspension device to reach the target pressure; wherein the first pressure and the second pressure are between the initial pressure and the target pressure, and the first pressure is also between the initial pressure and the second pressure.
Optionally, simultaneously adjusting the opening degrees of the air inlet proportional valve and the air outlet proportional valve to enable the pressure of the semiconductor chamber with the magnetic suspension device to reach the first pressure from the initial pressure, including: simultaneously increasing the opening degrees of an air inlet proportional valve and an air outlet proportional valve, so that the pressure of a semiconductor chamber with a magnetic suspension device is increased from an initial pressure to a first pressure, wherein the initial pressure is smaller than the first pressure; or simultaneously reducing the opening degrees of the air inlet proportional valve and the air outlet proportional valve, so that the pressure of the semiconductor chamber with the magnetic suspension device is reduced from the initial pressure to the first pressure, and the initial pressure is higher than the first pressure.
Alternatively, when the opening degrees of the intake proportional valve and the exhaust proportional valve are simultaneously increased, the difference between the current opening degree value of the intake proportional valve and the initial opening degree value of the intake proportional valve is larger than the difference between the current opening degree value of the exhaust proportional valve and the initial opening degree value of the exhaust proportional valve when the pressure for the semiconductor chamber having the magnetic levitation device is increased from the initial pressure to the first pressure.
Optionally, when the opening degrees of the air intake proportional valve and the air exhaust proportional valve are simultaneously increased, and the pressure of the semiconductor chamber with the magnetic suspension device is increased from the initial pressure to the first pressure, stopping adjusting the opening degree of the air intake proportional valve and continuing to adjust the opening degree of the air exhaust proportional valve, and when the pressure of the semiconductor chamber with the magnetic suspension device reaches the second pressure, stopping adjusting the opening degree of the air exhaust proportional valve, starting adjusting the opening degree of the air intake proportional valve, and enabling the pressure of the semiconductor chamber with the magnetic suspension device to reach the target pressure, wherein the method comprises the following steps: stopping increasing the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the first pressure, continuously reducing the opening of the air outlet proportional valve, and increasing the pressure for the semiconductor chamber with the magnetic suspension device to the second pressure; stopping reducing the opening of the exhaust proportional valve when the pressure for the semiconductor chamber with the magnetic levitation device reaches the second pressure, starting increasing the opening of the intake proportional valve, and increasing the pressure for the semiconductor chamber with the magnetic levitation device to the target pressure; wherein the first pressure < the second pressure < the target pressure.
Alternatively, when the pressure for the semiconductor chamber having the magnetic levitation device reaches the second pressure, stopping decreasing the opening of the exhaust proportional valve, starting increasing the opening of the intake proportional valve, and increasing the pressure for the semiconductor chamber having the magnetic levitation device to the target pressure, comprising: and adjusting the opening degree of the air inlet proportional valve by adopting a proportional integral derivative control program according to the difference value between the target pressure and the second pressure.
Alternatively, when the opening degrees of the intake proportional valve and the exhaust proportional valve are simultaneously reduced, and the pressure for the semiconductor chamber having the magnetic levitation device is reduced from the initial pressure to the first pressure, the difference between the initial opening degree value of the intake proportional valve and the current opening degree value of the intake proportional valve is smaller than the difference between the initial opening degree value of the exhaust proportional valve and the current opening degree value of the exhaust proportional valve.
Optionally, when the opening degrees of the air intake proportional valve and the air exhaust proportional valve are simultaneously reduced, and the pressure of the semiconductor chamber with the magnetic suspension device is reduced from the initial pressure to the first pressure, stopping adjusting the opening degree of the air exhaust proportional valve and continuing to adjust the opening degree of the air intake proportional valve, and when the pressure of the semiconductor chamber with the magnetic suspension device reaches the second pressure, stopping adjusting the opening degree of the air intake proportional valve, starting adjusting the opening degree of the air exhaust proportional valve, and enabling the pressure of the semiconductor chamber with the magnetic suspension device to reach the target pressure, wherein the method comprises the following steps: stopping reducing the opening of the exhaust proportional valve when the pressure for the semiconductor chamber with the magnetic levitation device reaches the first pressure, continuously reducing the opening of the air inlet proportional valve, and reducing the pressure for the semiconductor chamber with the magnetic levitation device to the second pressure; stopping reducing the opening of the air inlet proportional valve when the pressure for the semiconductor chamber with the magnetic suspension device reaches the second pressure, starting to increase the opening of the air outlet proportional valve, and reducing the pressure for the semiconductor chamber with the magnetic suspension device to the target pressure; wherein the first pressure > the second pressure > the target pressure.
Optionally, when the pressure for the semiconductor chamber with the magnetic levitation device reaches the second pressure, stopping decreasing the opening of the air intake proportional valve, starting increasing the opening of the air exhaust proportional valve, and reducing the pressure for the semiconductor chamber with the magnetic levitation device to the target pressure, including: and adjusting the opening degree of the exhaust proportional valve by adopting a proportional integral derivative control program according to the difference value between the target pressure and the second pressure.
In a second aspect, there is provided an apparatus for a method of controlling pressure of a semiconductor chamber having a magnetic levitation device, the semiconductor apparatus comprising a semiconductor chamber having a magnetic levitation device, a pressure sensing unit, an air intake proportional valve, an air exhaust proportional valve, a vacuum pump, and a controller, the semiconductor chamber having a magnetic levitation device having an air intake port and an air exhaust port; the pressure sensing unit is arranged in the semiconductor chamber with the magnetic suspension device and is used for measuring the pressure in the chamber; the air inlet is communicated with an air inlet proportional valve, and the air inlet proportional valve is used for controlling the flow of air flowing into a semiconductor chamber with a magnetic suspension device through the air inlet; the exhaust port is communicated with an exhaust proportional valve, and the exhaust proportional valve is used for controlling the flow of gas flowing out of the semiconductor chamber with the magnetic suspension device through the exhaust port; the vacuum pump is communicated with the exhaust proportional valve and is used for vacuumizing a semiconductor cavity with the magnetic suspension device; the pressure sensing unit, the air inlet proportional valve and the air outlet proportional valve are respectively and electrically connected with the controller.
Optionally, the pressure sensing unit includes a low pressure sensor and a high pressure sensor, and the low pressure sensor and the high pressure sensor are respectively connected with the controller.
The present application will be described in further detail with reference to the accompanying drawings.
Referring to fig. 1 and 2, the present application provides a control method for a semiconductor chamber pressure having a magnetic levitation device, which is mainly applied to a semiconductor apparatus including a semiconductor chamber 1 having a magnetic levitation device, the semiconductor chamber 1 having a magnetic levitation device having an air inlet and an air outlet, the air inlet being in communication with an air inlet proportional valve 2, the air outlet being in communication with an air outlet proportional valve 3, the control method comprising:
s1, simultaneously adjusting the opening degrees of the air inlet proportional valve 2 and the air outlet proportional valve 3 to enable the pressure of the semiconductor chamber 1 with the magnetic suspension device to reach the first pressure from the initial pressure.
In practical application, the simultaneous adjustment of the opening degrees of the intake proportional valve 2 and the exhaust proportional valve 3 means that the opening degrees of the intake proportional valve 2 and the exhaust proportional valve 3 are increased simultaneously, or decreased simultaneously, or increased one by one, and decreased the other in the same period of time, so that the internal pressure for the semiconductor chamber 1 with the magnetic levitation device is increased or decreased by the cooperation of the intake proportional valve 2 and the exhaust proportional valve 3.
In the embodiment of the present application, the opening degrees of the intake proportional valve 2 and the exhaust proportional valve 3 are simultaneously adjusted over a period of time so that the internal pressure for the semiconductor chamber 1 with the magnetic levitation device quickly reaches the first pressure from the initial pressure, and when the internal pressure for the semiconductor chamber 1 with the magnetic levitation device reaches the first pressure, the operation of S2, that is, the opening degrees of the intake proportional valve 2 and the exhaust proportional valve 3 are independently adjusted, is performed, and the pressurization or depressurization is realized.
S2, stopping adjusting the opening of the air inlet proportional valve 2 and continuously adjusting the opening of the air outlet proportional valve 3 when the pressure of the semiconductor chamber 1 with the magnetic suspension device reaches a first pressure, stopping adjusting the opening of the air outlet proportional valve 3 when the pressure of the semiconductor chamber 1 with the magnetic suspension device reaches a second pressure, starting adjusting the opening of the air inlet proportional valve 2, and enabling the pressure of the semiconductor chamber 1 with the magnetic suspension device to reach a target pressure; or stopping adjusting the opening of the exhaust proportional valve 3 and continuing to adjust the opening of the intake proportional valve 2 when the pressure for the semiconductor chamber 1 with the magnetic levitation device reaches the first pressure, stopping adjusting the opening of the intake proportional valve 2 when the pressure for the semiconductor chamber 1 with the magnetic levitation device reaches the second pressure, starting adjusting the opening of the exhaust proportional valve 3, and enabling the pressure for the semiconductor chamber 1 with the magnetic levitation device to reach the target pressure; wherein the first pressure and the second pressure are between the initial pressure and the target pressure, and the first pressure is also between the initial pressure and the second pressure.
By adopting the technical scheme, the air inlet and the air outlet of the semiconductor chamber 1 with the magnetic suspension device are respectively communicated with the air inlet proportional valve 2 and the air outlet proportional valve 3, and the target pressure is increased or reduced in stages, so that the pressure in the semiconductor chamber 1 with the magnetic suspension device is regulated in a way of independently and jointly regulating the opening of the air inlet proportional valve 2 and the opening of the air outlet proportional valve 3 in stages, the rapid stable increase or reduction of the internal pressure of the semiconductor chamber 1 with the magnetic suspension device can be realized, the abrupt increase or drop of the internal pressure of the semiconductor chamber 1 with the magnetic suspension device is avoided, and the stable increase or drop of the pressure is ensured in the whole pressurizing or depressurizing process.
Referring to fig. 2, the present application provides an apparatus for a control method of a pressure of a semiconductor chamber having a magnetic levitation device, the apparatus comprising a semiconductor chamber 1 having a magnetic levitation device, a pressure sensing unit, an air intake proportional valve 2, an air exhaust proportional valve 3, a vacuum pump 4, and a controller 5, the semiconductor chamber 1 having a magnetic levitation device having an air intake port and an air exhaust port; the pressure sensing unit is arranged in the semiconductor chamber 1 with the magnetic suspension device and is used for measuring the pressure in the semiconductor chamber 1 with the magnetic suspension device; the air inlet is communicated with an air inlet proportional valve 2, and the air inlet proportional valve 2 is used for controlling the flow of air flowing into the semiconductor chamber 1 with the magnetic suspension device through the air inlet; the exhaust port is communicated with an exhaust proportional valve 3, and the exhaust proportional valve 3 is used for controlling the flow of gas flowing out of the semiconductor chamber 1 with the magnetic suspension device through the exhaust port; the vacuum pump 4 is communicated with the exhaust proportional valve 3 and is used for vacuumizing the semiconductor chamber 1 with the magnetic levitation device; the pressure sensing unit, the intake proportional valve 2 and the exhaust proportional valve 3 are electrically connected with the controller 5, respectively.
In some embodiments of the present application, in order to maintain a vacuum state for normal processes inside the semiconductor chamber 1 having the magnetic levitation device, the vacuum pump 4 continuously evacuates; the pressure value acquired by the pressure sensing unit in the semiconductor chamber 1 with the magnetic levitation device is used as an input signal of the controller 5, wherein the controller 5 adopts a controller capable of executing a PID program, so that the controller 5 can respectively perform PID (proportion-integral-derivative) control on the opening of the air inlet proportional valve 2 and the air outlet proportional valve 3 according to the acquired pressure signal, and can accurately determine the opening of the air inlet proportional valve 2 and the air outlet proportional valve 3.
Wherein the pressure sensing unit comprises one or more pressure sensors, each of the plurality of pressure sensors being adapted to sense pressure within a sub-range of the full range of pressures achievable within the semiconductor chamber 1 with the magnetic levitation device when the pressure sensing unit comprises a plurality of pressure sensors, thereby increasing the dynamic range and resolution of the pressure sensing unit.
In some embodiments of the application, the pressure sensing unit comprises a low pressure sensor 6 and a high pressure sensor 7, the low pressure sensor 6 and the high pressure sensor 7 being connected to the controller 5, respectively, the controller 5 being capable of receiving pressure signals from the low pressure sensor 6 and the high pressure sensor 7, respectively. Since the low pressure sensor 6 and the high pressure sensor 7 have different pressure operating ranges, the dynamic range and sensitivity of the pressure sensing unit can be increased and improved.
In some embodiments of the application, a magnetic levitation device 8 is further provided inside the semiconductor chamber 1 for having the magnetic levitation device, and a processed object 9 is provided above the magnetic levitation device 8.
Taking the apparatus provided in the above embodiment as an example for the rapid pressurization control of the interior of the semiconductor chamber 1 with the magnetic levitation device, the control method for the pressure of the semiconductor chamber with the magnetic levitation device includes:
s10. simultaneously increasing the opening degree of the intake proportional valve 2 and the exhaust proportional valve 3, the pressure for the semiconductor chamber 1 with the magnetic levitation device is increased from the initial pressure to the first pressure.
Referring to fig. 2 to 6, in order to maintain a vacuum state at the time of a normal process inside a semiconductor chamber having a magnetic levitation device, the vacuum pump 4 continuously pumps vacuum, the initial opening value of the air intake proportional valve 2 is A0, the initial opening value of the air exhaust proportional valve 3 is B0, and the initial pressure value is P0, before pressurizing the semiconductor chamber 1 having the magnetic levitation device. In the initial stage of pressurization, in order to prevent the force applied to the upper part of the processed object 9 from influencing the floating position of the processed object 9 in space due to the abrupt pressure increase, the opening of the air inlet proportional valve 2 and the air outlet proportional valve 3 are required to be controlled simultaneously so as to control the flow rate of the air in the semiconductor chamber 1 with the magnetic levitation device within a certain process numerical range, therefore, the air inlet proportional valve 2 and the air outlet proportional valve 3 are simultaneously increased at the pressurization starting time t0, wherein the opening adjustment rate of the air inlet proportional valve 2 > the opening adjustment rate of the air outlet proportional valve 3, and the pressure is increased to the first pressure reached by the internal pressure of the semiconductor chamber 1 with the magnetic levitation device at the first time t1, at this time, the first pressure value is P1, the current opening value of the air inlet proportional valve 2 is A1, and the current opening value of the air outlet proportional valve 3 is B1. Since the opening degrees of the intake proportional valve 2 and the exhaust proportional valve 3 are controlled to be increased at the same time and A1-A0> B1-B0 are made, it is possible to prevent the internal pressure for the semiconductor chamber 1 with the magnetic levitation device from increasing sharply while the internal pressure for the semiconductor chamber 1 with the magnetic levitation device is rapidly increased to the pressure value P1.
S11, stopping increasing the opening of the air inlet proportional valve 2 when the pressure of the semiconductor chamber 1 with the magnetic suspension device reaches the first pressure, continuously reducing the opening of the air outlet proportional valve 3, and increasing the pressure of the semiconductor chamber 1 with the magnetic suspension device to the second pressure;
as shown in fig. 4 to 6, in the second stage of the pressurization, that is, between the first time t1 and the second time t2, the opening value A1 of the air intake proportional valve 2 is kept unchanged, the opening value of the air exhaust proportional valve 3 is adjusted so that the opening value of the air exhaust proportional valve 3 is rapidly reduced from B1 to B0, and in the second stage of the pressurization, that is, between the first time t2 and the second time t2, the internal pressure for the semiconductor chamber 1 having the magnetic levitation device reaches the second pressure, at which time the second pressure value is P2.
In the second stage of pressurization, the opening value of the exhaust proportional valve 3 is recovered from B1 to the initial opening value B0 of the exhaust proportional valve 3, so that the opening of the exhaust proportional valve 3 can be adjusted in advance for the subsequent recovery to the pressure in the non-process stage, thereby saving the time required for reaching the process condition. Of course, the opening value of the exhaust ratio valve 3 may be reduced from B1 to another value, and may be set according to the actual situation, and the present application is not limited thereto.
S12. when the pressure for the semiconductor chamber 1 with the magnetic levitation device reaches the second pressure, the opening of the exhaust proportional valve 3 stops decreasing, and the opening of the intake proportional valve 2 starts increasing, so that the pressure for the semiconductor chamber 1 with the magnetic levitation device increases to the target pressure.
As shown in fig. 4 to 6, in the third stage of the pressurization, that is, between the second time t2 and the final time t3, the opening value B0 of the exhaust proportional valve 3 is kept unchanged, and the opening of the intake proportional valve 2 is adjusted again to rapidly increase the opening value of the intake proportional valve 2 from A1 to A2, and when the pressurization is performed to the final time t3, the internal pressure of the semiconductor chamber 1 having the magnetic levitation device reaches the target pressure, and at this time, the target pressure value is P3.
Wherein the initial pressure value P0< the first pressure value P1< the second pressure value P2< the target pressure value P3.
In some alternative embodiments, in the third stage of pressurization, when the pressure for the semiconductor chamber 1 having the magnetic levitation device reaches the second pressure, the opening degree of the intake proportional valve 2 may be adjusted using a pid control routine according to the difference between the target pressure and the second pressure. The basis of the proportional-integral-derivative control program is proportional operation; the integration operation may eliminate steady state errors, but may add overshoot; the differential operation can accelerate the response speed of the large inertia system and weaken the overshoot trend, and the PID operation is carried out on the pressure difference value between the second pressure value P2 and the target pressure value P3, so that the opening degree of the air inlet proportional valve 2 can be rapidly and accurately determined.
Referring to fig. 4 to 6, the opening (%) of the intake air proportional valve 2 undergoes a change from a0→a1→a2 throughout the supercharging adjustment process; the opening (%) of the exhaust proportional valve 3 undergoes a change from b0→b1→b0, and the entire process maintains the target pressure value P3 for the semiconductor chamber 1 having the magnetic levitation device at a rapid rise from P0 at time t 0to t 3.
In some embodiments of the present application, the time Δt=t3-t0 of the pressurization adjustment, Δt is the set time of the pressurization process, and when the pressurization process for the semiconductor chamber 1 with the magnetic levitation device is stable, the faster the pressurization speed, the smaller the Δt value, the saved process time can improve the machine utilization and the working efficiency.
The parameters A0, A1, A2, B0, B1, t2 and t3 are all adjustable technological parameters.
Referring to fig. 7, in some embodiments of the present application, a control method for a semiconductor chamber pressure having a magnetic levitation device further includes rapid depressurization adjustment, the control method including:
s20. simultaneously decreasing the opening of the intake proportional valve 2 and the exhaust proportional valve 3, so that the pressure for the semiconductor chamber 1 with the magnetic levitation device is reduced from the initial pressure to the first pressure.
Wherein, the difference between the initial opening value of the air intake proportional valve 2 and the current opening value of the air intake proportional valve 2 is smaller than the difference between the initial opening value of the exhaust proportional valve 3 and the current opening value of the exhaust proportional valve 3.
S21. when the pressure for the semiconductor chamber 1 with the magnetic levitation device is reduced from the initial pressure to the first pressure, the reduction of the opening of the exhaust proportional valve 3 and the reduction of the opening of the intake proportional valve 2 are stopped, so that the pressure for the semiconductor chamber 1 with the magnetic levitation device is reduced to the second pressure.
S22. when the pressure for the semiconductor chamber 1 with the magnetic levitation device reaches the second pressure, the opening of the intake proportional valve 2 stops decreasing, and the opening of the exhaust proportional valve 3 starts increasing, so that the pressure for the semiconductor chamber 1 with the magnetic levitation device decreases to the target pressure.
Wherein the initial pressure > the first pressure > the second pressure > the target pressure.
In some alternative embodiments, in step S31, the opening degree of the exhaust gas proportional valve 3 is adjusted by using the proportional-integral-derivative control routine according to the difference between the target pressure and the second pressure, so that the opening degree of the exhaust gas proportional valve 3 can be quickly and accurately determined.
The specific implementation procedure of steps S20 to S22 is as follows:
the opening degree adjustment trend of the air intake proportional valve 2 and the opening degree adjustment trend of the air exhaust proportional valve 3 in this adjustment process are shown in fig. 8 and 9, respectively, the target trend for the pressure adjustment of the semiconductor chamber 1 with the magnetic levitation device is shown in fig. 10, the initial opening degree value of the air intake proportional valve 2 is A0 ', the initial opening degree value of the air exhaust proportional valve 3 is B0 ', the initial pressure value is P0 ', and the pressure reduction adjustment step is as follows:
step1: the opening of the air inlet proportional valve 2 and the opening of the air outlet proportional valve 3 are controlled to be reduced simultaneously between the depressurization starting time t0 and the first time t1 until the first pressure reached by the internal pressure of the semiconductor chamber 1 with the magnetic levitation device at the time of depressurization to the first time t1, wherein the first pressure value is P1 ', the current opening value of the air inlet proportional valve 2 is A1 ', and the current opening value of the air outlet proportional valve 3 is B1 '. Since the opening degrees of the intake proportional valve 2 and the exhaust proportional valve 3 are controlled to be reduced simultaneously and a0 '-a1' > =b0 '-B1', it is possible to prevent the internal pressure for the semiconductor chamber 1 having the magnetic levitation device from dropping sharply while the internal pressure for the semiconductor chamber 1 having the magnetic levitation device is rapidly dropped to the pressure value P1.
Step2: maintaining the opening value B1 ' of the exhaust proportional valve 3 unchanged between the first time t1 and the second time t2, rapidly reducing the opening value of the intake proportional valve 2 to A2 ', and when the pressure is reduced to the second time t2, the internal pressure of the semiconductor chamber 1 with the magnetic levitation device reaches a second pressure, wherein the second pressure value is P2 ';
step3: the opening value A2 ' of the air intake proportional valve 2 is kept unchanged between the second time t2 and the final time t3, the opening of the air exhaust proportional valve 3 is quickly adjusted to the opening value B2 ' by a proportional integral derivative control program, and the internal pressure of the semiconductor chamber 1 with the magnetic levitation device reaches the target pressure when the pressure is reduced to the final time t3, and at this time, the target pressure value is P3 '.
Wherein, the initial pressure value is P0 ' > the first pressure value is P1 ' > the second pressure value is P2 ' > the target pressure value is P3 ', as shown in FIGS. 8-10, the opening (%) of the air inlet proportional valve 2 in the whole decompression adjustment process is subjected to the change from A0 '. Fwdarw.A1 '. Fwdarw.A2 '; the opening (%) of the exhaust proportional valve 3 undergoes a change from B0 ' to B1 ' to B2 ', and the pressure for the semiconductor chamber 1 having the magnetic levitation device is maintained to be rapidly reduced from P0 ' at time t 0to a target pressure value P3 ' at time t3 throughout.
In summary, the embodiments provide a method and apparatus for controlling pressure of a semiconductor chamber with a magnetic levitation device, which have at least the following advantages:
1) By communicating the air inlet and the air outlet for the semiconductor chamber 1 with the magnetic levitation device with the air inlet proportional valve 2 and the air outlet proportional valve 3 respectively and adjusting the pressure in the semiconductor chamber 1 with the magnetic levitation device by adjusting the opening degrees of the air inlet proportional valve 2 and the air outlet proportional valve 3 independently and jointly in stages respectively, the change of the control position of the processed object 9 caused by the abrupt increase or the abrupt decrease of the internal pressure of the semiconductor chamber 1 with the magnetic levitation device can be relieved, and the rapid stable increase or decrease of the internal pressure of the semiconductor chamber 1 with the magnetic levitation device can be realized, and the stable increase or decrease of the pressure can be ensured in the whole pressurizing or depressurizing process. When the magnetic levitation device 8 is contained in the semiconductor chamber 1 with the magnetic levitation device, the control in different pressure ranges can be ensured not to cause the position deviation of the processed object 9 in the magnetic levitation device 8 to be overrun, and the smooth transfer process of the processed object 9 between the chambers can be ensured.
2) The air inlet proportional valve 2 and the air outlet proportional valve 3 are proportional valves, and the relation between the opening degree of the proportional valves and the gas flow is a clear proportional relation, so that the volume of the semiconductor chamber 1 with the magnetic levitation device can be combined according to the proportional relation, the time required by the semiconductor chamber 1 with the magnetic levitation device in each stage of pressurization or depressurization can be calculated clearly, the control process of the internal pressure of the semiconductor chamber 1 with the magnetic levitation device is more accurate and reliable, and in addition, the equipment cost can be saved by using the proportional valves to replace mass flow meters.
3) In the case of pressurizing or stabilizing the semiconductor chamber 1 having the magnetic levitation device, the pressurizing or depressurizing time can be shortened to improve the machine utilization rate and the working efficiency.
4) The present application can be applied not only to control of the pressure increasing and reducing process in the chamber 1 including the magnetic levitation device 8, but also to control of the pressure in other closed or semi-closed chambers and containers.
Those of ordinary skill in the art will appreciate that: the drawing is a schematic diagram of one embodiment and the modules or flows in the drawing are not necessarily required to practice the application.
The present application is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present application are intended to be included in the scope of the present application.
Claims (7)
1. A control method for a pressure of a semiconductor chamber having a magnetic levitation device, the semiconductor chamber having an air inlet and an air outlet, the air inlet being in communication with an air inlet proportional valve, the air outlet being in communication with an air outlet proportional valve, the control method comprising:
when the opening degree of the air inlet proportional valve and the opening degree of the air outlet proportional valve are increased simultaneously, and the pressure of the semiconductor chamber with the magnetic suspension device is increased from the initial pressure to the first pressure, the opening degree of the air inlet proportional valve is stopped to be increased, and the opening degree of the air outlet proportional valve is continuously reduced, and when the pressure of the semiconductor chamber with the magnetic suspension device reaches the second pressure, the opening degree of the air inlet proportional valve is stopped to be reduced, and the opening degree of the air inlet proportional valve is started to be increased, so that the pressure of the semiconductor chamber with the magnetic suspension device is increased to the target pressure, wherein the initial pressure < the first pressure < the second pressure < the target pressure;
when the opening degree of the air inlet proportional valve and the opening degree of the air outlet proportional valve are simultaneously reduced, and the pressure of the semiconductor chamber with the magnetic suspension device is reduced from the initial pressure to the first pressure, the opening degree of the air outlet proportional valve is stopped to be reduced, and the opening degree of the air inlet proportional valve is stopped to be reduced, and when the pressure of the semiconductor chamber with the magnetic suspension device reaches the second pressure, the opening degree of the air outlet proportional valve is started to be increased, so that the pressure of the semiconductor chamber with the magnetic suspension device is reduced to the target pressure, wherein the initial pressure is the first pressure, the second pressure is the target pressure.
2. The control method for the pressure of the semiconductor chamber with the magnetic levitation device according to claim 1, wherein when the opening degrees of the intake proportional valve and the exhaust proportional valve are simultaneously increased, the difference between the current opening degree value of the intake proportional valve and the initial opening degree value of the intake proportional valve is greater than the difference between the current opening degree value of the exhaust proportional valve and the initial opening degree value of the exhaust proportional valve when the pressure for the semiconductor chamber with the magnetic levitation device is increased from the initial pressure to the first pressure.
3. The control method for the pressure of the semiconductor chamber with the magnetic levitation device according to claim 1, wherein stopping decreasing the opening of the exhaust proportional valve and starting increasing the opening of the intake proportional valve when the pressure for the semiconductor chamber with the magnetic levitation device reaches the second pressure, increasing the pressure for the semiconductor chamber with the magnetic levitation device to the target pressure, comprises:
and adjusting the opening degree of the air inlet proportional valve by adopting a proportional integral derivative control program according to the difference value between the target pressure and the second pressure.
4. The control method for the pressure of the semiconductor chamber with the magnetic levitation device according to claim 1, wherein when the opening degrees of the intake proportional valve and the exhaust proportional valve are simultaneously reduced, the pressure for the semiconductor chamber with the magnetic levitation device is reduced from the initial pressure to the first pressure, a difference between the initial opening degree value of the intake proportional valve and the current opening degree value of the intake proportional valve is smaller than a difference between the initial opening degree value of the exhaust proportional valve and the current opening degree value of the exhaust proportional valve.
5. The control method for the pressure of the semiconductor chamber with the magnetic levitation device according to claim 1, wherein stopping decreasing the opening of the intake proportional valve and starting increasing the opening of the exhaust proportional valve when the pressure for the semiconductor chamber with the magnetic levitation device reaches the second pressure, decreasing the pressure for the semiconductor chamber with the magnetic levitation device to the target pressure, comprises:
and adjusting the opening degree of the exhaust proportional valve by adopting a proportional integral derivative control program according to the difference value between the target pressure and the second pressure.
6. A control apparatus for semiconductor chamber pressure, characterized in that the control apparatus is used for the control method of semiconductor chamber pressure with magnetic levitation device according to any of claims 1-5, the control apparatus comprising a control device for semiconductor chamber with magnetic levitation device, a pressure sensing unit, an air intake proportional valve, an air exhaust proportional valve, a vacuum pump and a controller, the control device comprising a control device for controlling the pressure of semiconductor chamber with magnetic levitation device;
the pressure sensing unit is arranged inside the semiconductor chamber with the magnetic suspension device and is used for measuring the pressure inside the semiconductor chamber with the magnetic suspension device;
the air inlet is communicated with an air inlet proportional valve, and the air inlet proportional valve is used for controlling the flow of air flowing into a semiconductor chamber with a magnetic suspension device through the air inlet;
the exhaust port is communicated with an exhaust proportional valve, and the exhaust proportional valve is used for controlling the flow of gas flowing out of the semiconductor chamber with the magnetic suspension device through the exhaust port;
the vacuum pump is communicated with the exhaust proportional valve and is used for vacuumizing a semiconductor cavity with the magnetic suspension device;
the pressure sensing unit, the air inlet proportional valve and the air outlet proportional valve are respectively and electrically connected with the controller.
7. The control apparatus for semiconductor chamber pressure according to claim 6, wherein the pressure sensing unit comprises a low pressure sensor and a high pressure sensor, the low pressure sensor and the high pressure sensor being respectively connected to the controller.
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