CN116438636A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN116438636A CN116438636A CN202280007073.6A CN202280007073A CN116438636A CN 116438636 A CN116438636 A CN 116438636A CN 202280007073 A CN202280007073 A CN 202280007073A CN 116438636 A CN116438636 A CN 116438636A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 91
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000011135 tin Substances 0.000 claims abstract description 52
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- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 22
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052718 tin Inorganic materials 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 8
- 239000000956 alloy Substances 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
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- 229910018100 Ni-Sn Inorganic materials 0.000 description 1
- 229910018532 Ni—Sn Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910020882 Sn-Cu-Ni Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- -1 contains (Cu Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
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- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
提供一种组装容易、具有高可靠性和耐腐蚀性的半导体装置。具备:安装构件(1),其具有以铜为主成分的布线层(1b);第1覆盖层(2),其含有镍,且以布线层(1b)上表面的一部分在开口部(8)露出的方式覆盖布线层(1b);接合层(3),其在开口部(8)与布线层(1b)金属性接合;第2覆盖层(6),其含有镍,且在接合层(3)的上表面与接合层(3)金属性接合;以及半导体芯片(7),其下表面被第2覆盖层(6)覆盖。接合层(3)具有与布线层(1b)接触的下层(5a)、与第2覆盖层(6)接触的上层(5b)、以及在下层(5a)与上层(5b)之间的中间层(4),下层(5a)和上层(5b)包含含有锡、铜以及镍的金属间化合物作为主成分,中间层(4)是以锡为主成分且不含铅的合金。
Description
技术领域
本发明涉及一种半导体装置。
背景技术
在通常的半导体装置中,搭载有半导体元件的半导体芯片与印刷布线基板(PWB)、绝缘电路基板等安装基板、或者引线框等接合。近年来,大多采用不含对环境、人体有害的铅(Pb)的无铅(无Pb)焊料作为半导体装置的接合材料。例如,作为无铅焊料,使用锡银(SnAg)系、锡锑(SnSb)系等以锡(Sn)为主成分的焊料(Sn基焊料)。相对于以往的SnPb共晶焊料为183℃左右的熔点,SnAg系焊料的熔点高40℃左右,SnSb系焊料的熔点高60℃左右。安装基板使用铜箔、银钎料等金属覆膜,为了防止金属覆膜中的铜(Cu)、银(Ag)被硫化氢腐蚀,在金属层的表面设有镀镍(Ni)覆膜。
在利用Sn基焊料将半导体芯片接合于实施了镀Ni覆膜的安装基板的半导体装置中,在接合层界面以平坦的层状形成Ni-Sn金属间化合物。若对这样的半导体装置实施温度循环试验、功率循环试验,则裂纹从半导体芯片的端部朝向接合层内部与半导体芯片平行地伸展,导致半导体装置的早期破坏。
在专利文献1中,记载了将在安装基板的Cu布线层与半导体芯片之间形成的接合层形成为Cu布线层侧的Cu3Sn金属间化合物层与半导体芯片侧的(Cu,Ni)6Sn5金属间化合物层的2层结构,抑制裂纹产生。在专利文献1中,使用在Cu布线层与半导体芯片之间依次层叠有Ni薄膜、Sn薄膜、Ni薄膜以及Cu薄膜的接合材料,通过液相扩散接合法,在232℃~400℃左右的温度下进行接合。
在专利文献2和3中,记载了为了抑制Ni腐蚀而在镀Ni的被接合构件与Sn基钎料之间设置Cu层而形成接合层的方法。在专利文献2中公开了,在接合层与被接合构件之间,在中央部形成有Cu6Sn5或(Cu,Ni)6Sn5化合物层,在外周部形成有Ni3Sn4或(Ni,Cu)3Sn4化合物层。在专利文献3中,公开了在Sn基钎料的固相线温度以上且液相线温度以下的温度下进行加热而在被接合构件与Sn基焊料层之间形成Cu6Sn5或(Cu,Ni)6Sn5化合物层。
在专利文献4中记载了,在向Ni镀层上的焊料接合中,使用添加有Cu的Sn基焊料作为接合材料,在Ni镀层上形成Cu-Sn化合物层。
若使用添加有Cu的Sn基焊料,则Cu-Sn化合物层形成于接合界面,能够抑制裂纹的伸展。然而,若在钎料中添加Cu,则熔点变高,因此焊料接合温度变高,接合构件的热变形增大,另外,粘度也增大,因此钎料的印刷性恶化。其结果,半导体装置的组装性降低。
现有技术文献
专利文献
专利文献1:日本特开2020-155761号公报
专利文献2:日本特开2018-85366号公报
专利文献3:日本特开2018-85360号公报
专利文献4:日本特许第6429208号公报
发明内容
发明要解决的问题
鉴于上述课题,本发明的目的在于提供一种组装容易且具有高可靠性和耐腐蚀性的半导体装置。
用于解决问题的方案
本发明的一技术方案的要旨在于一种半导体装置,其具备:(a)安装构件,其具有以铜为主成分的布线层;(b)第1覆盖层,其含有镍,且以使布线层上表面的一部分在开口部露出的方式覆盖布线层;(c)接合层,其在开口部与布线层金属性接合;(d)第2覆盖层,其含有镍,且在接合层的上表面与接合层金属性接合;以及(e)半导体芯片,其下表面被第2覆盖层覆盖,接合层具有与布线层接触的下层、与第2覆盖层接触的上层、以及在下层与上层之间的中间层,下层和上层包含含有锡、铜以及镍的金属间化合物作为主成分,中间层是以锡为主成分且不含铅的合金。
发明的效果
根据本发明,能够提供一种组装容易且具有高可靠性和耐腐蚀性的半导体装置。
附图说明
图1是表示本发明的实施方式的半导体装置的一例的剖视概略图。
图2是图1中的A部分的放大图。
图3是表示以往的半导体装置的一例的剖视外略图。
图4是图3中的B部分的放大图。
图5是对实施方式的半导体装置实施功率循环试验之后的剖视概略图。
图6是图5中的C部分的(a)SEM图像、(b)Sn分布图像、(c)Ni分布图像以及(d)Cu分布图像。
图7是对以往的半导体装置实施功率循环试验之后的剖视概略图。
图8是图7中的D部分的(a)SEM图像、(b)Sn分布图像以及(c)Ni分布图像。
图9是表示实施方式的半导体装置的制造方法的工序的一例的剖视外略图。
图10是表示实施方式的半导体装置的制造方法的接着图9的工序的一例的剖视外略图。
图11是表示实施方式的半导体装置的制造方法的接着图10的工序的一例的剖视外略图。
具体实施方式
以下,参照附图,对本发明的实施方式进行说明。在附图的记载中,对相同或类似的部分标注相同或类似的附图标记,省略重复的说明。但是,附图是示意性的,厚度与平面尺寸的关系、各层的厚度的比率等有时与实际不同。另外,在附图相互之间也可能包含尺寸的关系、比率不同的部分。另外,以下所示的实施方式例示了用于将本发明的技术思想具体化的装置、方法,本发明的技术思想并不将构成部件的材质、形状、构造、配置等特定为下述内容。
另外,以下的说明中的上下等方向的定义仅是为了便于说明的选择,并不限定本发明的技术思想。例如,当然,如果将对象旋转90°进行观察,则上下变换为左右而被阅读,如果旋转180°进行观察,则上下反转而被阅读。同样,“表”“背”的关系也是,若旋转180°,则定义反转的用语。
如图1所示,本发明的实施方式的半导体装置具备安装构件1、覆盖层(第1覆盖层)2、接合层3、覆盖层(第2覆盖层)6以及半导体芯片7。安装构件1例如具有绝缘基板1a以及以铜(Cu)为主成分的布线层1b。覆盖层2含有镍(Ni),覆盖布线层1b。覆盖层2具有使布线层1b的上表面的一部分露出的开口部8。接合层3具有在覆盖层2的开口部8与布线层1b金属性接合的下层5a,与覆盖层6金属性接合的上层5b,以及在下层5a与上层5b之间的中间层4。中间层是以Sn为主成分的合金层。覆盖层6含有镍(Ni),覆盖半导体芯片7的下表面。
在实施方式中,作为安装构件1,例示了在绝缘基板1a的上表面设有布线层1b的绝缘电路基板。绝缘电路基板例如能够采用在陶瓷基板的表面共晶接合有铜(Cu)的直接铜接合(DCB)基板、在陶瓷基板的表面通过活性金属硬钎焊(AMB)法配置有铜(Cu)等金属的AMB基板等。陶瓷基板的材料例如能够采用氮化硅(Si3N4)、氮化铝(AlN)、氧化铝(Al2O3)等。需要说明的是,作为安装构件1,也可以是在树脂基板设有以铜(Cu)为主成分的布线层的印刷布线基板(PCB)、以铜(Cu)、铝(Al)等为主成分的引线框、金属板、金属箔等布线构件。
在实施方式的说明中,使用碳化硅(SiC)作为半导体芯片7的半导体材料进行说明。在半导体芯片7中,除了SiC以外,还能够使用硅(Si)、氮化镓(GaN)、蓝丝黛尔石(六方晶金刚石)、氮化铝(AlN)等半导体材料。作为形成半导体芯片7的半导体元件,包括IGBT、MOSFET等3端子元件、续流二极管(FWD)、肖特基势垒二极管(SBD)等2端子元件等。另外,作为半导体元件,也能够使用双极型晶体管(BPT)、静电感应晶体管(SIT)、静电感应晶闸管(SI晶闸管)或栅极关断晶闸管(GTO晶闸管)等。从耐腐蚀性的观点出发,在安装构件1的布线层1b的上表面以及半导体芯片7的下表面分别通过镀Ni等覆盖有覆盖层2、6。
在将半导体芯片7接合于安装构件1的布线层1b的情况下,使用不包含对环境、人体有害的Pb的无铅焊料作为接合材料。例如,作为无铅焊料,使用SnAg系、SnSb系等以Sn为主成分的Sn基焊料。需要说明的是,Sn基焊料除了主要的添加元素Ag、Sb以外,还可以微量含有铟(In)、锌(Zn)、铋(Bi)、镁(Mg)等添加元素。Sn基焊料优选不含有Cu,但如果含量为微量,例如为0.5质量%以下,则也可以含有Cu。在图1所示的覆盖层2的开口部8露出的布线层1b的上表面通过印刷技术等堆积作为无铅焊料的接合材料,在接合材料之上配置下表面被覆盖层6覆盖的半导体芯片7。之后,在接合工序中利用回流焊炉等加热至260℃左右,将半导体芯片7软钎焊安装于安装构件1。在该接合工序的软钎焊中熔融的接合材料与布线层1b和覆盖层6润湿,由此,接合层3与在覆盖层2的开口部8露出的布线层1b金属性接合,并且,与覆盖层6金属性接合。其结果,形成具有与布线层1b接触的下层5a、与覆盖层6接触的上层5b、以及在下层5a与上层5b之间的中间层4的接合层3。
在接合工序中,在接合材料的加热中,Cu从布线层1b扩散到熔融的接合材料中,Ni从覆盖层6扩散到熔融的接合材料中。在熔融的接合材料与覆盖层6的界面,通过从覆盖层6扩散的Ni生成含有Sn和Ni的金属间化合物(以下,也表述为Sn-Ni化合物。)。此时,通过从布线层1b向接合材料中扩散的Cu,在覆盖层6侧界面生成含有Sn、Cu以及Ni的金属间化合物(以下,也表述为Sn-Cu-Ni(金属间)化合物。),成为对来自覆盖层6的Ni的扩散的屏障。因此,覆盖层6侧的Sn-Ni化合物的生成受到限制。另外,在接合材料的冷却时,Sn-Cu-Ni化合物在与布线层1b和覆盖层6的界面凝固成柱状。其结果,如图1所示,在冷却后的接合层3形成包含Sn-Cu-Ni化合物的下层5a和上层5b。Sn-Cu-Ni化合物主要含有(Cu,Ni)6Sn5,也可以含有含微量Ni的Cu3Sn。另外,中间层4是以Sn为主成分且不含有Pb的合金。中间层4中还含有作为接合材料的成分而含有的Ag或Sb。中间层4中也可以含有从布线层1b和覆盖层6扩散的Cu和Ni。下层5a和上层5b分别具有朝向中间层4形成有柱状的多个突起的粗糙面。形成下层5a和上层5b的Sn-Cu-Ni金属间化合物具有比形成中间层4的以Sn为主成分的合金高的机械强度。需要说明的是,从耐腐蚀性的观点出发,如图1所示,期望的是,在回流焊工序中接合材料熔融,以接合层3的端部覆盖在覆盖层2的开口部8露出的布线层1b而与覆盖层2的上表面接触的方式形成焊料接合端部(填角)9。
图2是图1中的A部分、即覆盖了半导体芯片7的覆盖层6与接合层3的接合部分的放大图。如图2所示,半导体芯片7具有SiC等半导体层7a和钛(Ti)等电极层7b。在覆盖层6与接合层3的接合界面,覆盖层6会产生少量的Ni腐蚀。另外,接合层3的上层5b具有朝向中间层4形成有柱状的多个突起的粗糙面。若对半导体装置实施温度循环试验、功率循环试验,则由于热应力而在半导体芯片7的端部附近的接合界面产生裂纹10。产生的裂纹10欲在机械强度低的以Sn为主成分的中间层4中延伸,但如图2所示,通过机械强度高的以金属间化合物为主成分的上层5b的突起而蜿蜒,裂纹10向中间层4内的伸展被抑制。另外,虽然省略图示,但接合层3的下层5a也具有朝向中间层4形成有柱状的多个突起的粗糙面。因而,抑制在安装构件1侧的接合界面产生的裂纹也向中间层4内伸展。另外,安装构件1的布线层1b除了开口部8以外被覆盖层2覆盖,因此能够确保耐腐蚀性。这样,在实施方式中,作为接合材料,使用不添加大量的Cu的SnAg系、SnSb系等Sn基焊料。因而,能够防止由接合材料的熔点、粘度的增大引起的热变形、钎料的印刷性的恶化,能够抑制半导体装置的组装性的降低。
在以往的半导体装置中,对安装基板的以Cu为主成分的布线层整个面实施镀Ni而确保耐腐蚀性。图3是使用了实施了镀Ni的以往的安装基板的半导体装置的剖视图。如图3所示,以往的半导体装置具备安装构件1、覆盖层12、接合层13、覆盖层16以及半导体芯片7。安装构件1具有绝缘基板1a以及以Cu为主成分的布线层1b。覆盖层12含有Ni,覆盖布线层1b的整个上表面。接合层13具有与覆盖层12的上表面金属性接合的下层15a、与覆盖层16金属性接合的上层15b、以及在下层15a与上层15b之间的中间层14。半导体芯片7的下表面被含有Ni的覆盖层16覆盖。
与实施方式同样地,在以往的半导体装置中,也通过印刷技术等在覆盖安装构件1的上表面的覆盖层12上堆积作为无铅焊料的接合材料,在接合材料上配置下表面被覆盖层16覆盖的半导体芯片7。之后,在接合工序中利用回流焊炉等加热至260℃左右,将半导体芯片7软钎焊于安装构件1。通过该接合工序的软钎焊,接合材料与覆盖层12金属性接合,并且与覆盖层16金属性接合。其结果,形成具有与覆盖层12接触的下层15a、与覆盖层16接触的上层15b、以及在下层15a与上层15b之间的中间层14的接合层13。
在接合工序的加热中,Ni分别从覆盖层12和覆盖层16向熔融的接合材料中扩散,但Cu从被覆盖层12覆盖的布线层1b的扩散受到阻碍。因此,如图3所示,在冷却后的接合层13中,作为下层15a和上层15b,含有Sn和Ni的金属间化合物形成为层状。例如,作为下层15a,在覆盖层12侧主要层叠Ni3Sn2金属间化合物,在中间层14侧主要层叠Ni3Sn4金属间化合物。作为上层15b,在覆盖层16侧主要层叠Ni3Sn2金属间化合物,在中间层14侧主要层叠Ni3Sn4金属间化合物。接合层13的中间层14是以Sn为主成分且不含有Pb的合金。另外,在中间层14中含有Ag或Sb、Ni。
图4是图3中的B部分、即覆盖了半导体芯片7的覆盖层16与接合层13的接合部分的放大图。如图4所示,半导体芯片7具有半导体层7a和电极层7b。在覆盖层16与接合层13的接合界面,覆盖层16产生大量的Ni腐蚀。另外,由于以Sn-Ni金属间化合物为主成分的上层15b形成为平坦的层状,因此在接合层13的端部产生的裂纹10a容易与半导体芯片7平行地在中间层14中向一个方向伸展,导致半导体装置的早期破坏。虽然省略图示,但在与接合层13的接合界面,在覆盖层12产生大量的Ni腐蚀,以Sn-Ni金属间化合物为主成分的下层15a面向中间层14而形成为平坦的层状。
图5是对实施方式的半导体装置实施100000个循环的功率循环试验后的剖视图。如图5所示,以接合层3的端部覆盖在覆盖层2的开口部8露出的布线层1b而与覆盖层2的上表面接触的方式形成有填角9。在与接合层3的界面产生的裂纹10局部存在于半导体芯片7的端部附近。
图6表示图5中的C部分的基于扫描显微镜/能量色散型X射线分析装置(SEM/EDX)的观察结果。在图6中,(a)表示SEM图像,(b)表示Sn分布图像,(c)表示Ni分布图像,(d)表示Cu分布图像。如图6的(a)所示,在功率循环试验后在半导体芯片7的端部附近的接合层3界面产生的裂纹10被限制伸展,以轻微的状态局部存在。如图6的(b)的Sn分布图像所示,在接合层3的覆盖层6界面附近呈突起状地形成深灰色部,在接合层3的内部形成灰色部。在图6的(b)中,灰色部对应于Sn含量较多的中间层4,形成为突起状的深灰色部推定为对应于Sn含量比中间层4少的上层5b。如图6的(c)的Ni分布图像所示,对应于含有Ni的覆盖层6而形成浅灰色部,对应于在接合层3中粒状析出的Ni而散布有灰色部。如图6的(d)的Cu分布图像所示,与含有Cu的上层5b对应地呈突起状地形成有灰色部。由此可知,在实施方式的半导体装置中,以Sn-Ni-Cu金属间化合物为主成分的上层5b形成为突起状,抑制在接合层3的界面产生的裂纹10的伸展。
图7是对以往的半导体装置实施30000个循环的功率循环试验后的剖视图。如图7所示,接合层13形成于覆盖层12的上表面。在与接合层13的界面产生的裂纹10a在接合层13中与半导体芯片7平行地伸展。
图8表示图7中的D部分的基于SEM/EDX的观察结果。在图8中,(a)表示SEM图像,(b)表示Sn分布图像,(c)表示Ni分布图像。如图8的(a)所示,可知,在功率循环试验后在半导体芯片7的端部附近的接合层13界面产生的裂纹10a与半导体芯片7平行地在接合层13内伸展。根据图8的(b)和(c)的Sn分布图像和Ni分布图像,在接合层13的覆盖层16界面附近层状地分布有Sn和Ni,推定Sn和Ni所分布的层对应于接合层13的上层15b。这样,在以往的半导体装置中,主要包含Sn-Ni金属间化合物的上层15b形成为层状,因此在接合层13的界面产生的裂纹10a与半导体芯片7平行地向接合层13的内部伸展,引起半导体装置的早期故障。
接下来,参照图9和图11,对实施方式的半导体装置的制造方法进行说明。以下,使用绝缘电路基板作为安装构件1进行说明,但也可以是印刷布线基板(PCB)、引线框、金属板、金属箔等布线构件。
首先,准备在绝缘基板1a的上表面设有以Cu为主成分的布线层1b的绝缘电路基板作为安装构件1。在布线层1b的上表面涂布光致抗蚀剂膜,如图9所示,使用光刻技术等对光致抗蚀剂膜进行图案化而形成抗蚀剂掩模20。使用抗蚀剂掩模20作为镀覆用掩模,在布线层1b的上表面选择性地形成Ni镀层。去除抗蚀剂掩模20,如图10所示,在布线层1b的上表面形成具有开口部8的含有Ni的覆盖层2。需要说明的是,也可以在对安装构件1的布线层1b的整个面实施了镀Ni之后,通过激光加工、机械加工,在镀Ni层选择性地设置开口部8而形成覆盖层2。或者,也可以在设于布线层1b的整个面的Ni镀层上,使用光刻技术和蚀刻技术选择性地设置开口部8而形成覆盖层2。
接下来,如图11所示,通过印刷技术等在露出于覆盖层2的开口部8的布线层1b的上表面堆积Sn基无铅焊料、例如SnAg系焊料即接合材料3a。在堆积的接合材料3a上,配置下表面被含有Ni的覆盖层6覆盖的半导体芯片7。之后,在接合工序中,利用回流焊炉等加热至260℃左右,将半导体芯片7软钎焊安装于安装构件1。在利用回流焊炉的加热中,接合材料3a熔融而与布线层1b和覆盖层6润湿,Cu从布线层1b扩散到熔融的接合材料3a中,Ni从覆盖层6扩散到熔融的接合材料3a中。在接合工序后,如图1所示,在冷却后的接合层3上形成下层5a、中间层4以及上层5b。下层5a与在覆盖层2的开口部8露出的布线层1b金属性接合。上层5b与覆盖层6金属性接合。中间层4形成在下层5a与上层5b之间。下层5a和上层5b中包含凝固成突起状的含有Sn、Cu以及Ni的金属间化合物,中间层4中包含以Sn为主成分的合金。在接合工序中熔融的接合材料3a越过开口部8而在覆盖层2的上表面扩展,由此在接合层3的端部形成填角9。这样,完成了图1所示的半导体装置。
在实施方式中,利用覆盖层2选择性地覆盖安装构件1的布线层1b表面,在露出于开口部8的布线层1b上堆积Sn基焊料。在接合工序中,使Cu从布线层1b扩散到熔融的接合材料3a中,形成包含Sn-Cu-Ni化合物的下层5a和上层5b。在半导体芯片7的端部附近产生的裂纹10通过包含机械强度高的以Sn-Cu-Ni化合物作为主成分的上层5b的突起而蜿蜒。因此,能够抑制裂纹10向中间层4内伸展。另外,安装构件1的布线层1b除了开口部8以外被含有Ni的覆盖层2覆盖,因此能够确保耐腐蚀性。进而,在实施方式中,由于使用实质上不添加Cu的Sn基焊料,因此能够防止因接合材料3a的熔点、粘度的增大而导致的热变形、钎料的印刷性的恶化,能够抑制半导体装置的组装性的降低。
(其他实施方式)
本发明通过上述公开的实施方式进行了说明,但构成本公开的一部分的论述和附图不应理解为对本发明进行限定。根据本发明的说明书、附图的公开,本领域技术人员应该认为各种替代实施方式、实施例以及运用技术是显而易见的。另外,当然包含将在上述的实施方式以及各变形例中说明的各结构任意地应用的结构等、本发明在此未记载的各种实施方式等。因而,本发明的保护范围仅由根据上述示例性说明而妥当的、权利要求书所涉及的技术特征来确定。
附图标记说明
1 安装构件
1a 绝缘基板
1b 布线层
2覆盖层(第1覆盖层)
3、13 接合层
3a 接合材料
4、14 中间层
5a、15a下层
5b、15b上层
6覆盖层(第2覆盖层)
7 半导体芯片
7a 半导体层
7b 电极层
8 开口部
9接合端部(填角)
10、10a裂纹
12、16 覆盖层
20 抗蚀剂掩模
Claims (4)
1.一种半导体装置,其特征在于,该半导体装置具备:
安装构件,其具有以铜为主成分的布线层;
第1覆盖层,其含有镍,且以使所述布线层上表面的一部分在开口部露出的方式覆盖所述布线层;
接合层,其在所述开口部与所述布线层金属性接合;
第2覆盖层,其含有镍,且在所述接合层的上表面与所述接合层金属性接合;以及
半导体芯片,其下表面被所述第2覆盖层覆盖,
所述接合层具有与所述布线层接触的下层、与所述第2覆盖层接触的上层、以及在所述下层与所述上层之间的中间层,
所述下层和所述上层包含含有锡、铜以及镍的金属间化合物作为主成分,所述中间层是以锡为主成分且不含铅的合金。
2.根据权利要求1所述的半导体装置,其特征在于,所述金属间化合物的主成分为(Cu,Ni)6Sn5。
3.根据权利要求1或2所述的半导体装置,其特征在于,所述合金含有银或锑。
4.根据权利要求1~3中任一项所述的半导体装置,其特征在于,所述接合层的端部以覆盖所述开口部的方式与所述第1覆盖层的上表面接触。
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