CN116417395A - Cooling device for electrostatic chuck, electrostatic chuck and semiconductor processing equipment - Google Patents
Cooling device for electrostatic chuck, electrostatic chuck and semiconductor processing equipment Download PDFInfo
- Publication number
- CN116417395A CN116417395A CN202111653316.7A CN202111653316A CN116417395A CN 116417395 A CN116417395 A CN 116417395A CN 202111653316 A CN202111653316 A CN 202111653316A CN 116417395 A CN116417395 A CN 116417395A
- Authority
- CN
- China
- Prior art keywords
- fluid
- electrostatic chuck
- flow blocking
- fluid channel
- cooling apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001816 cooling Methods 0.000 title claims abstract description 62
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000012530 fluid Substances 0.000 claims abstract description 283
- 230000000903 blocking effect Effects 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims description 19
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000005452 bending Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 10
- 239000000110 cooling liquid Substances 0.000 description 7
- 239000000498 cooling water Substances 0.000 description 7
- 230000002035 prolonged effect Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The cooling device comprises a heat exchange plate and at least one fluid channel arranged in the heat exchange plate, wherein a plurality of first flow blocking structures extending into the fluid channel are arranged on the inner wall of the high temperature side of the fluid channel, a plurality of second flow blocking structures extending into the fluid channel are arranged on the inner wall of the low temperature side of the fluid channel, the first flow blocking structures and the second flow blocking structures are alternately arranged at intervals, so that a channel path for heat conduction fluid to pass through in the fluid channel in the cooling device of the electrostatic chuck is bent into an arc shape, the shape of the cross section of the channel for fluid to pass through on the radial section of the fluid channel is continuously changed along with the axial direction of the fluid channel, heat exchange is facilitated, the heat exchange efficiency is improved, the cooling effect is improved, the temperature uniformity of the electrostatic chuck is realized, the uniformity of semiconductor manufacturing process is improved, and the yield of products is improved.
Description
Technical Field
The present invention relates to the field of semiconductor devices, and more particularly, to a cooling apparatus for an electrostatic chuck, and a semiconductor processing apparatus.
Background
In a semiconductor processing apparatus, an electrostatic chuck for supporting a substrate is disposed in a reaction chamber, and a ceramic layer is disposed on the electrostatic chuck, and the ceramic layer is used to hold the substrate on a flat surface of the electrostatic chuck by generating an electrostatic field, thereby enabling the semiconductor processing apparatus to perform various process operations on the substrate.
In the semiconductor processing process, the temperature of the substrate needs to be strictly controlled, so that the temperature of each area on the substrate is uniformly distributed, a uniform semiconductor processing process is obtained, and a product with higher yield is obtained.
In some etching processes, the generated plasma may generate heat that is conducted to the substrate and the electrostatic chuck, and in some deposition processes, a heater is disposed in the electrostatic chuck to heat the substrate, which may result in a temperature increase of the substrate, and in order to adjust the temperature of the substrate, a cooling pipe is generally disposed in the electrostatic chuck, and a cooling liquid or cooling water is introduced into the cooling pipe to remove heat from the electrostatic chuck and the substrate through the flow of the cooling liquid or cooling water. Because the cooling pipeline has a certain length, the cooling liquid or cooling water absorbs heat on the electrostatic chuck and the substrate in the process of flowing through the cooling pipeline, the temperature of the cooling liquid or cooling water continuously rises, and the higher the temperature of the cooling liquid or cooling water, the less heat can be absorbed, and the cooling effect continuously decreases. The cooling effect at the inlet of the cooling pipe when the cooling liquid or the cooling water just enters the electrostatic chuck is best, the cooling effect at the outlet of the cooling pipe when the cooling liquid or the cooling water flows out of the electrostatic chuck is worst, and the temperatures at the inlet and the outlet of the cooling pipe form steps, so that the temperatures of the electrostatic chuck and the substrate are uneven, the semiconductor processing technology is uneven, and the product yield is reduced.
The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art.
Disclosure of Invention
The invention provides a cooling device for an electrostatic chuck, the electrostatic chuck and semiconductor processing equipment, wherein a channel path for heat conduction fluid to pass through in a fluid channel in the cooling device of the electrostatic chuck is bent into an arc shape, so that the shape of the cross section of the channel for the fluid to pass through on the radial cross section of the fluid channel is continuously changed along with the extension of the axial direction of the fluid channel, thereby being beneficial to heat exchange, improving the heat exchange efficiency, improving the cooling effect, realizing the uniform temperature of the electrostatic chuck, improving the uniformity of semiconductor manufacturing process and improving the product yield.
In order to achieve the above object, the present invention provides a cooling device for an electrostatic chuck, which is provided in the electrostatic chuck, the cooling device comprising: the heat exchange plate is internally provided with at least one fluid cavity, the inner wall of the high temperature side of the fluid cavity is provided with a plurality of first flow blocking structures extending into the fluid cavity, the inner wall of the low temperature side of the fluid cavity is provided with a plurality of second flow blocking structures extending into the fluid cavity, and the first flow blocking structures and the second flow blocking structures are alternately arranged at intervals.
The first flow blocking structures are arranged in a grid shape, and the second flow blocking structures are arranged in a grid shape.
The projection of the first flow blocking structure on the radial section of the fluid channel is called a first projection, the projection of the second flow blocking structure on the radial section of the fluid channel is called a second projection, the first projection and the second projection have overlapping portions, and the entire radial section of the fluid channel is completely covered by the first projection and the second projection.
The length of the first flow blocking structure extending into the fluid cavity is smaller than the inner diameter of the fluid cavity, and the length of the second flow blocking structure extending into the fluid cavity is smaller than the inner diameter of the fluid cavity.
The width of the first flow blocking structure extending along the axial direction of the fluid cavity on the inner wall of the fluid cavity is smaller than the distance between two second flow blocking structures arranged on two sides of the first flow blocking structure, and the width of the second flow blocking structure extending along the axial direction of the fluid cavity on the inner wall of the fluid cavity is smaller than the distance between two first flow blocking structures arranged on two sides of the second flow blocking structure.
One end of the first flow blocking structure extending into the fluid channel is of a curved surface structure or a mesa structure or a tooth-shaped structure.
The first flow blocking structure is connected with the inner wall of the fluid cavity by adopting a curved surface or a folded surface.
One end of the second flow blocking structure, which penetrates into the fluid cavity, is a curved surface structure, a table-board structure or a tooth-shaped structure.
The second flow blocking structure is connected with the inner wall of the fluid cavity by adopting a curved surface or a folded surface.
Two or more of the fluid channels are layered within the heat exchange plate.
The fluid channels are arranged in a spiral manner in the plane of the heat exchange plate.
The fluid channels are distributed in a multi-hair clip bending structure in the plane of the heat exchange plate.
The fluid channel has an inlet and an outlet, the inlet and outlet being connected to a fluid source.
All of the fluid channels are connected to the same fluid source or each of the fluid channels is individually connected to one fluid source.
The inlet and the outlet of each fluid channel are respectively positioned in different areas of the heat exchange plate, or the inlet and the outlet of each fluid channel are positioned in the same area of the heat exchange plate.
The inlet of the fluid channel is positioned at the middle part or the periphery of the heat exchange plate, and the outlet of the fluid channel is positioned at the middle part or the periphery of the heat exchange plate.
The fluid source is a gas or a liquid.
The heat exchange plate is made of metal.
The invention also provides an electrostatic chuck, which comprises the cooling device.
The present invention also provides a semiconductor processing apparatus comprising:
the reaction cavity is internally provided with the electrostatic chuck, and the upper surface of the electrostatic chuck is provided with a ceramic layer for bearing a substrate.
According to the cooling device for the electrostatic chuck, the flow blocking structures are arranged on the inner wall of the fluid cavity channel in the heat exchange plate at intervals, so that the channel path for heat conduction fluid to pass through in the fluid cavity channel is bent into the shape of an arc, the shape of the cross section of the channel for fluid to pass through on the radial cross section of the fluid cavity channel is continuously changed along with the axial direction of the fluid cavity channel, the length of the fluid channel is prolonged, the contact area of the fluid and the side wall of the fluid cavity channel is increased, heat exchange is facilitated, a large amount of turbulence is generated in the fluid cavity channel, and the heat exchange efficiency is further improved. The cooling effect is improved, the temperature uniformity of the electrostatic chuck is realized, the uniformity of the semiconductor manufacturing process is improved, and the product yield is improved.
Drawings
Fig. 1 is a schematic view of a semiconductor processing apparatus according to an embodiment of the present invention.
Fig. 2 is a top cross-sectional view of a fluid channel in a cooling device in an electrostatic chuck in accordance with one embodiment of the present invention.
Fig. 3 is a side cross-sectional view of a segment AB of the fluid channel of fig. 2, taken approximately along a line.
Fig. 4 is a schematic view of a projection of the fluid channel of fig. 3 in a radial cross-section.
FIG. 5 is a schematic illustration of the flow of fluid in a fluid channel of a cooling device in one embodiment of the invention.
FIG. 6 is a cross-sectional view of a first flow blocking structure and a second flow blocking structure in a radial cross-section within a fluid passageway in accordance with another embodiment of the present invention.
FIG. 7 is a cross-sectional view of a first flow blocking structure and a second flow blocking structure in a radial cross-section within a fluid passageway in accordance with yet another embodiment of the present invention.
Fig. 8 is a top plan view of a fluid channel in a cooling device in an electrostatic chuck in accordance with another embodiment of the present invention.
Fig. 9 is a top plan view of a fluid channel in a cooling apparatus in an electrostatic chuck in accordance with yet another embodiment of the present invention.
Fig. 10 is a side cross-sectional view of a fluid channel in a cooling device in an electrostatic chuck in accordance with another embodiment of the present invention.
Detailed Description
The following describes a preferred embodiment of the present invention with reference to fig. 1 to 10.
In one embodiment of the present invention, as shown in fig. 1, a semiconductor processing apparatus is provided, which includes a reaction chamber 1, an electrostatic chuck 2 disposed in the reaction chamber 1, a ceramic layer 3 disposed on the electrostatic chuck, and a substrate 4 to be processed disposed on the ceramic layer 3. The electrostatic chuck 2 is provided therein with cooling means for cooling the ceramic layer 3 and the substrate 4.
In one embodiment of the present invention, as shown in fig. 2, the cooling device includes a heat exchange plate 5 and a fluid channel 6 disposed in the heat exchange plate 5, and the heat exchange plate 5 is made of metal, so as to facilitate heat conduction. In this embodiment, the fluid channels 6 are arranged in a single-layer spiral manner in the plane of the heat exchange plate 5, the inlets 601 of the fluid channels 6 are disposed at the periphery of the heat exchange plate 5, the outlets 602 of the fluid channels 6 are disposed at the middle of the heat exchange plate 5, and the inlets 601 and the outlets 602 are connected to a fluid source (not shown in the figure) which is a gas or a heat-carrying liquid with good heat conductivity.
Fig. 3 is a side sectional view of the AB section of the fluid channel 6 in fig. 2, where the temperature of the side wall of the fluid channel 6 closer to the heat source is higher, referred to as the high temperature side inner wall 61, for example, the side wall 61 is closer to the substrate, the temperature of the side is higher due to the heating of the substrate by the plasma during the process, the temperature of the side wall away from the heat source is lower, referred to as the low temperature side inner wall 63, for example, the side away from the substrate, which receives less heat from the plasma, or is in direct contact with the lower temperature electrostatic chuck portion to lower the temperature. A plurality of first flow blocking structures 62 extending into the fluid cavity are arranged on the high temperature side inner wall 61 of the fluid cavity along the axial direction of the fluid cavity, a plurality of second flow blocking structures 64 extending into the fluid cavity are arranged on the low temperature side inner wall 63 of the fluid cavity along the axial direction of the fluid cavity, and the first flow blocking structures 62 and the second flow blocking structures 64 are alternately arranged at intervals, namely, one second flow blocking structure 64 is arranged between two adjacent first flow blocking structures 62 along the axial direction of the fluid cavity, and one first flow blocking structure 62 is arranged between two adjacent second flow blocking structures 64. The radial section 603 of the fluid channel 6 may be any shape, and may be a relatively common rectangle, or may also be a circular shape or an oval shape, in the radial section 603 direction of the fluid channel 6, the bottoms and the sides of the first and the second flow blocking structures 62 and 64 are closely attached to the radial side walls of the fluid channel 6, the tops of the first and the second flow blocking structures 62 and 64 extend into the fluid channel 6, and the lengths and the volumes of the first and the second flow blocking structures 62 and 64 extending into the fluid channel 6 need to be ensured, so that the fluid channel 6 cannot be blocked, and the channels in the fluid channel 6 through which fluid can pass need to be changed into tortuous channels. As shown in fig. 4, taking a rectangular cross-section fluid channel as an example, the projection of the first flow blocking structure 62 onto the radial cross-section 603 of the fluid channel 6 is referred to as a first projection 65, the projection of the second flow blocking structure 64 onto the radial cross-section 603 of the fluid channel 6 is referred to as a second projection 66, the first projection 65 and the second projection 66 have an overlapping portion 67, and the entire radial cross-section 603 of the fluid channel 6 is completely covered by the first projection 65 and the second projection 66. Thus, when the fluid flows in the fluid channel 6, the fluid cannot move straight, but must move along an arc-shaped route, so that the contact area between the fluid and the side wall of the fluid channel is increased, the heat exchange is facilitated, a large amount of turbulence is generated in the fluid channel, and the heat exchange efficiency is further improved. The first flow blocking structure 62 and the second flow blocking structure 64 cannot infinitely extend into the fluid channel, as shown in fig. 3, taking a radial section 603 of the fluid channel 6 as a circular example, a length H1 of the first flow blocking structure 62 extending into the fluid channel 6 is smaller than an inner diameter d of the fluid channel 6, and a length H2 of the second flow blocking structure 63 extending into the fluid channel 6 is smaller than the inner diameter d of the fluid channel 6, so that the first flow blocking structure 62 and the second flow blocking structure 64 cannot block the fluid channel 6. Also, the individual first flow blocking structures 62 and second flow blocking structures 64 cannot extend infinitely in the axial direction of the fluid chamber 6, and it is necessary to ensure that the first flow blocking structures 62 and the second flow blocking structures 64 do not contact each other, i.e., as shown in fig. 3, the width w1 of the first flow blocking structures 62 extending axially along the fluid chamber on the inner wall of the fluid chamber is smaller than the distance D1 between the two second flow blocking structures 64 provided on both sides of the first flow blocking structures 62, and the width w2 of the second flow blocking structures 64 extending axially along the fluid chamber on the inner wall of the fluid chamber is smaller than the distance D2 between the two first flow blocking structures 62 provided on both sides of the second flow blocking structures 64, so that it is also ensured that the first flow blocking structures 62 and the second flow blocking structures 64 do not block the fluid chamber 6. As shown in fig. 5, in the present embodiment, a plurality of the first flow blocking structures 62 are arranged in a grid shape, and a plurality of the second flow blocking structures 64 are also arranged in a grid shape, and the first flow blocking structures 62 and the second flow blocking structures 64 form a comb-shaped structure that is interposed between each other. One end of the first flow blocking structure 62 extending into the fluid channel is a mesa structure, and in the axial direction of the fluid channel 6, a side wall of the first flow blocking structure 62 is connected to an inner wall of the fluid channel 6 by a folded surface, for example: the first flow blocking structure 62 is rectangular in cross-section along the axial direction of the fluid channel 6, and similarly, one end of the second flow blocking structure 64 extending into the fluid channel is also a mesa structure, and in the axial direction of the fluid channel 6, the side wall of the second flow blocking structure 64 is also a folded surface connection with the inner wall of the fluid channel 6. The first flow blocking structure 62 and the second flow blocking structure 64 are arranged at intervals, so that the channel path of the fluid channel 6 for passing the fluid is bent into an arc shape, that is, there are countless radial cross sections 603 along the axial direction of the fluid channel 6, and the shape of the cross section of the channel of the radial cross sections 603 for passing the fluid is not fixed, but is continuously changed along the axial direction of the fluid channel 6. The arc shape prolongs the length of the fluid channel, increases the contact area of the fluid and the side wall of the fluid channel 6, is beneficial to heat exchange, and is beneficial to generating a large amount of turbulence in the fluid channel, so that the fluid collides with the cold wall and the hot wall for multiple times when travelling along the axial direction of the channel 6, and the heat exchange efficiency is further improved. As shown in fig. 5, the first choke structure 62 is connected to the high temperature side inner wall 61, so that the temperature of the first choke structure 62 and the high temperature side inner wall 61 tends to be uniform, and the second choke structure 64 is connected to the low temperature side inner wall 63, so that the temperature of the second choke structure 64 and the low temperature side inner wall 63 tends to be uniform. Assuming that the temperature of the first flow blocking structure 62 and the high temperature side inner wall 61 is Tc, the initial temperature of the fluid particles from the fluid source when entering the fluid channel 6 is Ta, the temperature of the low temperature side inner wall 63 is lower than Td, td < Ta < Tb < Tc, the fluid particles strike the first flow blocking structure 62 in the fluid channel, heat exchange occurs, the temperature of the fluid particles rises to Tb, at this time, the fluid particles are blocked by the first flow blocking structure 62, turbulence is generated, the flow direction is changed, the fluid flows toward the low temperature side inner wall 63, a first cold wall collision occurs after reaching the low temperature side inner wall 63, a large amount of heat exchange occurs along the low temperature side inner wall 63 in the process, a second cold wall collision occurs when striking the second flow blocking structure 64, the temperature of the fluid particles is reduced to be nearly Ta, at this time, the fluid particles are blocked by the second flow blocking structure 64, turbulence is generated, the flowing direction is changed again, the fluid particles flow towards the high temperature side inner wall 61, the fluid particles reach the high temperature side inner wall 61 and collide with the high temperature side inner wall 61 for the first time, flow along the high temperature side inner wall 61, in the process, undergo a great deal of heat exchange with the high temperature side inner wall 61 until the fluid particles collide with the next first flow blocking structure 62 for the second time, the temperature of the fluid particles is increased to be nearly Tb, at this time, the fluid particles are blocked by the first flow blocking structure 62, turbulence is generated, the flowing direction is changed, the fluid particles flow towards the low temperature side inner wall 63, in the process, undergo a great deal of heat exchange with the low temperature side inner wall 63 until the fluid particles collide with the next second flow blocking structure 64, the temperature of the fluid particles is reduced to be almost Ta … …, and the above processes are continuously repeated, so that the fluid particles continuously and alternately collide between the high-temperature side inner wall 61 and the low-temperature side inner wall 63 of the fluid channel 6, and the high-temperature side inner wall 61 and the low-temperature side inner wall 63 continuously exchange heat for a plurality of times, the temperature of the fluid particles at the inlet of the fluid channel 6 is slightly different from the temperature of the fluid particles at the outlet of the fluid channel 6, the cooling effect is improved, the temperature uniformity of the electrostatic chuck is realized, the uniformity of the semiconductor manufacturing process is improved, and the product yield is improved.
In other embodiments of the present invention, the first and second flow blocking structures 62, 64 may take other shapes. As shown in fig. 6, in another embodiment, an end of the first choke structure 62 extending into the fluid channel may be configured as a curved surface structure, and in the axial direction of the fluid channel 6, a side wall of the first choke structure 62 and an inner wall of the fluid channel 6 are also configured as a curved surface for connection, for example: the first flow blocking structure 62 is a hilly protrusion in a cross-section along the axial direction of the fluid channel 6, and similarly, an end of the second flow blocking structure 64 extending into the fluid channel is also a curved surface structure, and in the axial direction of the fluid channel 6, a side wall of the second flow blocking structure 64 is also a curved surface connection with an inner wall of the fluid channel 6. The first flow blocking structure 62 and the second flow blocking structure 64 are arranged at intervals, so that the channel path of the fluid channel 6 for passing the fluid is bent into an arc shape, that is, there are countless radial cross sections 603 along the axial direction of the fluid channel 6, and the shape of the cross section of the channel of the radial cross sections 603 for passing the fluid is not fixed, but is continuously changed along the axial direction of the fluid channel 6. The length of the fluid channel is prolonged by the arc shape, the contact area of the fluid and the side wall of the fluid channel 6 is increased, the heat exchange is facilitated, a great amount of turbulence is facilitated to be generated in the fluid channel by the arc shape, and the heat exchange efficiency is further improved.
In another embodiment of the present invention, as shown in fig. 7, an end of the first choke structure 62 extending into the fluid channel may be configured as a tooth-shaped structure, for example: the first flow blocking structure 62 is triangular in cross-section along the axial direction of the fluid channel 6, and in the axial direction of the fluid channel 6, the side wall of the first flow blocking structure 62 and the inner wall of the fluid channel 6 may be connected in a curved surface or a folded surface, and similarly, the end of the second flow blocking structure 64 extending into the fluid channel may also be provided with a tooth-shaped structure, and in the axial direction of the fluid channel 6, the side wall of the second flow blocking structure 64 and the inner wall of the fluid channel 6 may also be connected in a curved surface or a folded surface. The first flow blocking structure 62 and the second flow blocking structure 64 are arranged at intervals, so that the channel path of the fluid channel 6 for passing the fluid is bent into an arc shape, that is, there are countless radial cross sections 603 along the axial direction of the fluid channel 6, and the shape of the cross section of the channel of the radial cross sections 603 for passing the fluid is not fixed, but is continuously changed along the axial direction of the fluid channel 6. The length of the fluid channel is prolonged by the arc shape, the contact area of the fluid and the side wall of the fluid channel 6 is increased, the heat exchange is facilitated, a great amount of turbulence is facilitated to be generated in the fluid channel by the arc shape, and the heat exchange efficiency is further improved.
In other embodiments of the present invention, the fluid channel 6 may be arranged in other ways. In another embodiment, as shown in fig. 8, the fluid channels 6 are arranged in a double-layer spiral shape in the plane of the heat exchange plate 5, in this embodiment, the inlet 601 and the outlet 602 of the fluid channels 6 are both arranged in the middle of the heat exchange plate 5, and likewise, the inlet 601 and the outlet 602 of the fluid channels 6 may be arranged on the periphery of the heat exchange plate 5, and the inlet 601 and the outlet 602 are connected to a fluid source. The inlet and the outlet of the fluid channel 6 are arranged in the same area, so that the temperature difference between fluid particles at the inlet of the fluid channel and fluid particles at the outlet of the fluid channel can be further reduced, and the temperature uniformity of the electrostatic chuck can be further improved.
In another embodiment of the present invention, as shown in fig. 9, the fluid channels 6 are arranged in a multi-hair clip bending structure in the plane of the heat exchange plate 5, and likewise, in this arrangement, a single-layer arrangement structure may be adopted, that is, the inlet 601 and the outlet 602 of the fluid channels 6 are respectively located in different areas, or a double-layer arrangement structure may be adopted, that is, the inlet 601 and the outlet 602 of the fluid channels 6 are located in the same area. The multi-hair clamp bending arrangement structure enables the fluid cavity 6 to have a plurality of 180-degree bending structures, and fluid in the fluid cavity 6 is easier to generate turbulence, so that collision is increased, heat exchange is facilitated, heat exchange efficiency is improved, and temperature uniformity of the electrostatic chuck is facilitated to be improved.
It should be noted that fig. 2, 8 and 9 are only for illustrating the plan arrangement of the channels 6 on the plane, and do not limit the radial dimension of the channels 6.
In other embodiments of the invention, two or more fluid channels 6 may be provided in the heat exchanger plate 5 of the cooling device to enhance the cooling effect of the cooling device. Specifically, the cooling device is divided into multiple layers, one fluid channel 6 is disposed in each layer, the arrangement manner of the fluid channels 6 may be any one of the arrangements mentioned in the foregoing embodiments, and the inlet and the outlet of each fluid channel 6 may be separately connected to one fluid source, or all the fluid channels 6 may be connected to the same fluid source. As shown in fig. 10, in this embodiment, two fluid channels are disposed in the heat exchange plate 5, the first fluid channel 6-1 is disposed on the upper layer of the heat exchange plate 5, the first fluid channel 6-1 is arranged in a single-layer spiral manner, the inlet and the outlet of the first fluid channel 6-1 are connected to a first fluid source, the second fluid channel 6-2 is disposed on the lower layer of the heat exchange plate 5, the second fluid channel 6-2 is arranged in a multi-hair clip bending structure, and the inlet and the outlet of the second fluid channel 6-2 are connected to a second fluid source. At this time, the inner wall of the first fluid channel 6-1 on the low temperature side is the inner wall of the second fluid channel 6-2 on the high temperature side, the inner wall of the first fluid channel 6-1 is directly subjected to the heat radiation of the heat source, the fluid particles from the first fluid source are introduced into the first fluid channel 6-1, multiple heat exchanges are performed between the inner wall of the first fluid channel 6-1 on the high temperature side and the inner wall of the low temperature side, the fluid particles from the second fluid source are introduced into the second fluid channel 6-2, multiple heat exchanges are performed between the inner wall of the second fluid channel 6-2 on the high temperature side and the inner wall of the low temperature side, and because the inner wall of the first fluid channel 6-1 on the high temperature side is the inner wall of the second fluid channel 6-2, which is equivalent to double the heat exchanges between the inner wall of the first fluid channel 6-1 on the high temperature side and the inner wall of the second fluid channel 6-2 on the low temperature side, thereby greatly improving the cooling efficiency. Different fluid channels are independently connected to different fluid sources, and the temperatures of fluid particles in the different fluid channels cannot influence each other, so that the cooling effect is further improved. Different fluid channels adopt different arrangement modes, so that heat exchange areas can be mutually compensated, and the temperature uniformity of the electrostatic chuck in the cooling process is further improved.
According to the cooling device for the electrostatic chuck, the flow blocking structures are arranged on the inner wall of the fluid cavity channel in the heat exchange plate at intervals, so that the channel path for heat conduction fluid to pass through in the fluid cavity channel is bent into the shape of an arc, the shape of the cross section of the channel for fluid to pass through on the radial cross section of the fluid cavity channel is continuously changed along with the axial direction of the fluid cavity channel, the length of the fluid channel is prolonged, the contact area of the fluid and the side wall of the fluid cavity channel is increased, heat exchange is facilitated, a large amount of turbulence is generated in the fluid cavity channel, and the heat exchange efficiency is further improved. The cooling effect is improved, the temperature uniformity of the electrostatic chuck is realized, the uniformity of the semiconductor manufacturing process is improved, and the product yield is improved.
It should be noted that, in the embodiments of the present invention, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the embodiments, and do not indicate or imply that the apparatus or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (20)
1. A cooling apparatus for an electrostatic chuck disposed within the electrostatic chuck, the cooling apparatus comprising: the heat exchange plate is internally provided with at least one fluid cavity, the inner wall of the high temperature side of the fluid cavity is provided with a plurality of first flow blocking structures extending into the fluid cavity, the inner wall of the low temperature side of the fluid cavity is provided with a plurality of second flow blocking structures extending into the fluid cavity, and the first flow blocking structures and the second flow blocking structures are alternately arranged at intervals.
2. The cooling apparatus for an electrostatic chuck of claim 1, wherein a plurality of the first blocking structures are arranged in a grid shape and a plurality of the second blocking structures are arranged in a grid shape.
3. The cooling apparatus for an electrostatic chuck of claim 2, wherein a projection of the first flow blocking structure onto a radial cross section of the fluid channel is referred to as a first projection, a projection of the second flow blocking structure onto a radial cross section of the fluid channel is referred to as a second projection, the first projection and the second projection have overlapping portions, and an entire radial cross section of the fluid channel is entirely covered by the first projection and the second projection.
4. The cooling apparatus for an electrostatic chuck of claim 3, wherein a length of the first flow blocking structure extending into the fluid cavity is less than an inner diameter of the fluid cavity, and a length of the second flow blocking structure extending into the fluid cavity is less than the inner diameter of the fluid cavity.
5. The cooling apparatus for an electrostatic chuck of claim 2, wherein a width of the first flow blocking structure extending in an axial direction of the fluid channel on the inner wall of the fluid channel is smaller than a distance between two second flow blocking structures disposed at both sides of the first flow blocking structure, and a width of the second flow blocking structure extending in an axial direction of the fluid channel on the inner wall of the fluid channel is smaller than a distance between two first flow blocking structures disposed at both sides of the second flow blocking structure.
6. The cooling apparatus for an electrostatic chuck of claim 2, wherein an end of the first flow blocking structure extending into the fluid channel is a curved structure or a mesa structure or a tooth structure.
7. The cooling apparatus for an electrostatic chuck of claim 6, wherein the first flow blocking structure is curved or folded with respect to the inner wall of the fluid channel.
8. The cooling apparatus for an electrostatic chuck of claim 2, wherein an end of the second flow blocking structure that extends into the fluid channel is a curved structure or a mesa structure or a tooth structure.
9. The cooling apparatus for an electrostatic chuck of claim 8, wherein the second flow blocking structure is curved or folded with respect to the inner wall of the fluid channel.
10. The cooling apparatus for an electrostatic chuck of claim 1, wherein two or more of the fluid channels are layered within the heat exchange plate.
11. The cooling apparatus for an electrostatic chuck of claim 10, wherein the fluid channels are arranged in a spiral in the plane of the heat exchange plate.
12. The cooling apparatus for an electrostatic chuck of claim 10, wherein the fluid channels are arranged in a multi-hair clip bending configuration in the plane of the heat exchange plate.
13. The cooling apparatus for an electrostatic chuck of claim 11 or 12, wherein the fluid channel has an inlet and an outlet, the inlet and outlet being connected to a fluid source.
14. The cooling apparatus for an electrostatic chuck of claim 13, wherein all of said fluid channels are connected to a same fluid source or each of said fluid channels is individually connected to a fluid source.
15. The cooling apparatus for an electrostatic chuck of claim 13, wherein the inlet and the outlet of each of the fluid channels are located in different areas of the heat exchange plate, respectively, or the inlet and the outlet of each of the fluid channels are located in the same area of the heat exchange plate.
16. The cooling apparatus for an electrostatic chuck of claim 15, wherein the inlet of the fluid channel is located at a center or periphery of the heat exchange plate, and the outlet of the fluid channel is located at a center or periphery of the heat exchange plate.
17. The cooling apparatus for an electrostatic chuck of claim 13, wherein the fluid source is a gas or a liquid.
18. The cooling apparatus for an electrostatic chuck of claim 1, wherein the heat exchanging plate is made of metal.
19. An electrostatic chuck comprising a cooling device according to any one of claims 1-18.
20. A semiconductor processing apparatus, comprising: a reaction chamber having an electrostatic chuck as claimed in claim 19 disposed therein, the electrostatic chuck having a ceramic layer on an upper surface thereof for supporting a substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111653316.7A CN116417395A (en) | 2021-12-30 | 2021-12-30 | Cooling device for electrostatic chuck, electrostatic chuck and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111653316.7A CN116417395A (en) | 2021-12-30 | 2021-12-30 | Cooling device for electrostatic chuck, electrostatic chuck and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116417395A true CN116417395A (en) | 2023-07-11 |
Family
ID=87058197
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111653316.7A Pending CN116417395A (en) | 2021-12-30 | 2021-12-30 | Cooling device for electrostatic chuck, electrostatic chuck and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116417395A (en) |
-
2021
- 2021-12-30 CN CN202111653316.7A patent/CN116417395A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI624904B (en) | Substrate supporting device | |
| US9546827B2 (en) | Device for conducting a cooling fluid, and cooling system for cooling an electrical component | |
| KR101534497B1 (en) | Heat exchanger for steam generator and steam generator having the same | |
| JP2009257755A (en) | Fluid processing device and method therefor | |
| EP2767788B1 (en) | Multi-fluid heat exchanger | |
| TW201812988A (en) | Pedestal with multi-zone temperature control and multiple purge capabilities | |
| WO2006075614A1 (en) | Heat sink and cooling unit using same | |
| CN103477042A (en) | Device having a heat exchanger for a thermoelectric generator of a motor vehicle | |
| KR20100103627A (en) | Method and apparatus for controlling temperature of a substrate | |
| KR102094009B1 (en) | Temperature control apparatus for chemical liquid for manufacturing semiconductor | |
| TW201408983A (en) | High-efficiency heat exchanger and high-efficiency heat exchange method | |
| CN105202960A (en) | Aluminum tube type heat exchanger | |
| US20140174361A1 (en) | Heated backing plate | |
| JP4326300B2 (en) | Plasma CVD apparatus and electrode for plasma CVD apparatus | |
| CN116417395A (en) | Cooling device for electrostatic chuck, electrostatic chuck and semiconductor processing equipment | |
| JP2016130625A (en) | Heat exchanger and metal thin plate for the same | |
| CN218321578U (en) | Cooling plate assembly and cavity for manufacturing solar cell | |
| CN110057138B (en) | Heat exchange assembly and refrigeration equipment with same | |
| KR102086161B1 (en) | Heat exchange type cooling device | |
| JP3802655B2 (en) | Heat exchanger | |
| JP4786723B2 (en) | Plasma CVD apparatus and electrode for plasma CVD apparatus | |
| US20210180870A1 (en) | Heat exchanger component with varying twist angle | |
| WO2024002198A1 (en) | Power battery heat exchanger, power battery system and electric vehicle | |
| JP2006329470A (en) | Heat exchanger and air conditioner comprising the same | |
| JP2005083593A (en) | Susceptor cooling system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |