CN116404079A - Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode - Google Patents

Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode Download PDF

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CN116404079A
CN116404079A CN202310372756.8A CN202310372756A CN116404079A CN 116404079 A CN116404079 A CN 116404079A CN 202310372756 A CN202310372756 A CN 202310372756A CN 116404079 A CN116404079 A CN 116404079A
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layer
nano
emitting diode
pillars
light
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张彩霞
印从飞
程金连
刘春杨
胡加辉
金从龙
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Jiangxi Zhao Chi Semiconductor Co Ltd
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Jiangxi Zhao Chi Semiconductor Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer comprises a substrate, and a nucleation layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially arranged on the substrate; the multi-quantum well layer is of a periodic structure, the period number is 2-15, and each period comprises a quantum well layer and a quantum barrier layer which are sequentially laminated; each quantum barrier layer comprises: a plurality of AlN nano-pillars distributed on the quantum well layer in an array manner; a plurality of AlGaN nano-pillars laminated on the AlN nano-pillars in a one-to-one correspondence manner; and the GaN two-dimensional layers are stacked on the AlGaN nano-pillars and grow and merge along the preset direction at the tops of the AlGaN nano-pillars to form the quantum barrier layers with nano holes. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

Description

Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode
Technical Field
The invention relates to the field of semiconductor photoelectric devices, in particular to a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode.
Background
Currently, gaN-based light emitting diodes have been widely used in the field of solid state lighting as well as in the field of display, attracting more and more attention. The GaN-based light emitting diode has been industrially produced and has been used in backlight, illumination, landscape lamp, and the like.
In the light emitting diode, a multiple quantum well layer is used as an active light emitting region, and is a periodic structure in which a potential well layer and a barrier layer are repeatedly stacked, and is the most important structure in epitaxial growth. The inventors found that the following problems exist:
(1) The conventional InGaN well layer and GaN barrier layer have serious lattice mismatch, and the generated piezoelectric polarization and defect accumulation in the multi-quantum well layer affect the luminous efficiency of the light-emitting diode, especially under the condition of low current density, and the situation is more serious;
(2) Because the electron mobility is larger than that of the hole, and the P-type doping is difficult to activate, electrons in the multi-quantum well layer are larger than that of the hole, and electron overflow is easy to occur, so that the luminous efficiency is influenced.
Disclosure of Invention
The invention aims to solve the technical problem of providing a light-emitting diode epitaxial wafer and a preparation method thereof, which can improve the luminous efficiency of a light-emitting diode.
The invention also solves the technical problem of providing a light-emitting diode with high luminous efficiency.
In order to solve the problems, the invention discloses a light-emitting diode epitaxial wafer, which comprises a substrate, and a nucleation layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially arranged on the substrate; the multi-quantum well layer is of a periodic structure, the period number is 2-15, and each period comprises a quantum well layer and a quantum barrier layer which are sequentially laminated; each quantum barrier layer comprises:
a plurality of AlN nano-pillars distributed on the quantum well layer in an array manner;
a plurality of AlGaN nano-pillars stacked on the AlN nano-pillars in one-to-one correspondence;
and the GaN two-dimensional layer is stacked on the AlGaN nano column, and grows and merges along the preset direction at the top of the AlGaN nano column to form a quantum barrier layer with nano holes.
As an improvement of the technical scheme, the aspect ratio of the AlN nano-pillar is larger than that of the AlGaN nano-pillar.
As improvement of the technical scheme, the height of the AlN nano-pillars is 10-20 nm, the diameter is 2-5 nm, the Al component accounts for 0.6-0.7, and the distance between adjacent AlN nano-pillars is 10-200 nm.
As improvement of the technical scheme, the height of the AlGaN nano column is 5-10 nm, the diameter is 2-5 nm, and the Al component accounts for 0.25-0.3.
As an improvement of the technical scheme, the thickness of the GaN two-dimensional layer is 2-5 nm.
As an improvement of the technical scheme, the diameter of the AlGaN nano column is gradually increased from 2-5 nm to 10-20 nm along the epitaxial growth direction.
Correspondingly, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
providing a substrate, and sequentially growing a nucleation layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on the substrate; the multi-quantum well layer is of a periodic structure, and each period comprises a quantum well layer and a quantum barrier layer which are sequentially stacked; each quantum barrier layer comprises:
a plurality of AlN nano-pillars distributed on the quantum well layer in an array manner;
a plurality of AlGaN nano-pillars stacked on the AlN nano-pillars in one-to-one correspondence;
and the GaN two-dimensional layer is stacked on the AlGaN nano column, and grows and merges along the preset direction at the top of the AlGaN nano column to form a quantum barrier layer with nano holes.
As improvement of the technical scheme, the growth temperature of the AlN nano-column is 500-700 ℃ and the growth pressure is 500-600 torr;
the growth temperature of the AlGaN nano column is 750-850 ℃, and the growth pressure is 300-400 torr;
the growth temperature of the GaN two-dimensional layer is 1300-1400 ℃, and the growth pressure is 200-300 torr.
As an improvement of the technical scheme, when the AlN nano-column grows, the V/III ratio is 1500-2500;
when the AlGaN nano column grows, the V/III ratio is 1000-1500;
when the GaN two-dimensional layer grows, the V/III ratio is 200-500.
Correspondingly, the invention also discloses a light-emitting diode, which comprises the light-emitting diode epitaxial wafer.
The implementation of the invention has the following beneficial effects:
1. in the light-emitting diode epitaxial wafer, a quantum barrier layer with nanometer holes is formed through an AlN nanometer column, an AlGaN nanometer column and a GaN two-dimensional layer. The direct contact area of the quantum well layer and the quantum barrier layer is greatly reduced, so that lattice mismatch between the quantum well layer and the quantum barrier layer is reduced, polarization effect caused by lattice mismatch is reduced, non-radiative combination is reduced, and luminous efficiency is improved, especially under small current. And the quantum barrier layer with the nano holes can better release stress and reduce energy band inclination compared with the quantum barrier layer with the block-shaped two-dimensional structure, so that the consistency of the luminous wavelength is enhanced and the chromatic aberration is reduced when the light-emitting diode is injected with currents with different magnitudes.
2. According to the quantum barrier layer, the AlN nano column and the AlGaN nano column with high Al components are introduced, so that the energy level is higher, the electron migration rate can be effectively relieved, and the electron overflow is reduced.
3. According to the light-emitting diode epitaxial wafer, the quantum barrier layer with the nanometer holes is formed through the AlN nanometer column, the AlGaN nanometer column and the GaN two-dimensional layer, so that diffuse reflection of the light-emitting diode in a multiple quantum well region is increased, lateral light emission is particularly greatly enhanced, and light emission efficiency is increased.
Drawings
Fig. 1 is a schematic structural diagram of an led epitaxial wafer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a multi-quantum well layer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a multi-quantum well layer according to another embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing an led epitaxial wafer according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail below in order to make the objects, technical solutions and advantages of the present invention more apparent.
Referring to fig. 1 and 2, the invention discloses a light emitting diode epitaxial wafer, which comprises a substrate 1, and a nucleation layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6 and a P-type GaN layer 7 which are sequentially arranged on the substrate 1. The multiple quantum well layer 5 has a periodic structure, and the number of periods is 2 to 15, and each period includes a quantum well layer 51 and a quantum barrier layer 52 which are sequentially stacked.
Each quantum barrier layer 52 includes: the plurality of AlN nano-pillars 521 distributed on the quantum well layer 51 in an array form correspond to the plurality of AlGaN nano-pillars 522 stacked on the AlN nano-pillars 521 one by one, gaN two-dimensional layers 523 stacked on the AlGaN nano-pillars 522 are grown and combined along a preset direction at the top of the AlGaN nano-pillars 522 to form the quantum barrier layer 52 with nano holes 524.
Wherein the AlN nano-column 521 has a height of 5-30 nm, and when the height is less than 5nm, it is difficult to form the quantum barrier layer 52 having the nano-holes 524; when the height thereof is > 30nm, the potential barrier of the quantum barrier layer 52 is too high, reducing the light emitting efficiency. The AlN nanorods 521 have a height of 8nm, 10nm, 12nm, 15nm, 20nm, 22nm, 26nm, or 28nm, for example, but are not limited thereto. Preferably, the AlN nano-pillars 521 have a height of 10 to 20nm.
The AlN nano-pillars 521 have a diameter of 1 to 10nm, and the distance between adjacent AlN nano-pillars 521 is 5 to 220nm. When the diameter is too small or the adjacent pitch is too large, the latter GaN two-dimensional layer 523 is difficult to be connected to form a two-dimensional structure, affecting the crystal quality of the multiple quantum well layer 5, and reducing the light emitting efficiency. When the diameter thereof is too large or the adjacent pitch is too small, it is difficult to form effective light scattering. Illustratively, the AlN nanorods 521 have a diameter of 2nm, 4nm, 6nm, 8nm, or 9nm, but are not limited thereto. Preferably 2 to 5nm. Illustratively, the distance between adjacent AlN nano-pillars 521 is 15nm, 30nm, 45nm, 60nm, 80nm, 125nm, 130nm, or 180nm, but is not limited thereto. Preferably 10 to 200nm.
The Al composition in the AlN nano-rod 521 has a ratio of 0.5 to 0.8, and exemplary is 0.55, 0.59, 0.63, 0.67, 0.72, or 0.78, but is not limited thereto. Preferably 0.6 to 0.7.
Among them, the height of the AlGaN nanopillar 522 is 3 to 15nm, and exemplary is 5nm, 7nm, 9nm, 11nm or 13nm, but not limited thereto. Preferably 5 to 10nm.
The AlGaN nano-pillar 522 may have a cylindrical structure with a uniform diameter, or may have a truncated cone structure with a gradual diameter. In one embodiment of the present invention, the AlGaN nano-pillar 522 has a cylindrical structure with a uniform diameter, which is the same as that of the AlN nano-pillar 521, i.e., 2 to 5nm. Referring to fig. 4, in another embodiment of the present invention, alGaN nano-pillars 522 have a truncated cone structure with a gradually changing diameter, and in particular, the diameter of AlGaN nano-pillars gradually increases from 2 to 5nm to 10 to 20nm along the epitaxial growth direction. The AlGaN nano-pillar 522 based on the above structure can further improve the light extraction efficiency, and effectively improve the crystal quality of the GaN two-dimensional layer 523, thereby improving the crystal quality of the multi-quantum well layer 5 and improving the light emitting efficiency.
The Al component of AlGaN nanopillar 522 has a ratio of 0.2 to 0.4, and exemplary is 0.22, 0.26, 0.3, 0.34, 0.38, or 0.39, but is not limited thereto. Preferably 0.25 to 0.3.
Preferably, in one embodiment of the present invention, the aspect ratio of the AlN nanorods 521 is greater than the aspect ratio of the AlGaN nanorods 522. Based on this structure, the light emitting efficiency of the light emitting diode can be further improved.
Among them, the thickness of the GaN two-dimensional layer 523 is 1 to 15nm, and is exemplified by, but not limited to, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, or 14 nm. Preferably 2 to 5nm.
Among them, the substrate 1 may be a sapphire substrate, a silicon substrate, a SiC substrate, a ZnO substrate, or a GaN substrate, but is not limited thereto.
The nucleation layer 2 may be an AlN layer and/or an AlGaN layer, but is not limited thereto. Preferred is an AlN layer having a thickness of 20to 100nm, and exemplified by 25nm, 30nm, 35nm, 40nm, 50nm, 70nm or 85nm, but not limited thereto.
Among them, the thickness of the undoped GaN layer 3 is 300to 800nm, and exemplary is 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 700nm or 750nm, but is not limited thereto.
The doping element of the N-type GaN layer 4 is Si, but is not limited thereto. The doping concentration of the N-type GaN layer 4 was 5×10 18 ～5×10 19 cm -3 Exemplary is 7X 10 18 cm -3 、9×10 18 cm -3 、1.5×10 19 cm -3 、3×10 19 cm -3 Or 4X 10 19 cm -3 But is not limited thereto. The thickness of the N-type GaN layer 4 is 1 to 3 μm, and exemplary is 1.2 μm, 1.6 μm, 2 μm, 2.4 μm, 2.8 μm or 2.9 μm, but is not limited thereto.
The quantum well layer 51 is an InGaN layer, and has a thickness of 2 to 5nm. Exemplary are 2.5nm, 3nm, 3.5nm, 4nm, or 4.5nm, but are not limited thereto.
The electron blocking layer 6 is an AlGaN layer or an AlInGaN layer, but is not limited thereto. Preferably Al a Ga 1-a N layer (a=0.05 to 0.2) and In b Ga 1-b And the periodic structure of N layers (b=0.1-0.5) alternately grows, and the period number is 3-15. The thickness of the electron blocking layer 6 is 20-100 nm;
the doping element of the P-type GaN layer 7 is Mg, but is not limited thereto. The doping concentration of Mg in the P-type GaN layer 7 is 1×10 19 ～1×10 21 cm -3 Exemplary is 5×10 19 cm -3 、8×10 19 cm -3 、2×10 20 cm -3 、6×10 20 cm -3 Or 9X 10 20 cm -3 But is not limited thereto. The thickness of the P-type GaN layer 7 is 20to 100nm, and exemplary is 25nm, 30nm, 35nm, 40nm, 55nm, 70nm, or 85nm, but is not limited thereto.
Correspondingly, referring to fig. 4, the invention also discloses a preparation method of the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer and comprises the following steps:
s1: providing a substrate;
preferably, in one embodiment of the invention, the substrate is loaded into the MOCVD reaction chamber at H 2 Pretreating for 5-8 min in atmosphere at 1000-1200 deg.C and 200-600 torr.
S2: sequentially growing a nucleation layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on a substrate;
specifically, step S2 includes:
s21: growing a nucleation layer on the substrate;
among them, an MOCVD grown AlGaN layer may be used as a nucleation layer, or a PVD grown AlN layer may be used as a nucleation layer, but is not limited thereto.
Preferably, in one embodiment of the present invention, the MOCVD growth AlGaN layer is used as nucleation layer, and the growth temperature is 500-700 ℃ and the growth pressure is 200-400 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source.
S22: growing an undoped GaN layer on the nucleation layer;
wherein, in one embodiment of the invention, the undoped GaN layer is grown in MOCVD at 1100-1150 ℃ and at 100-500 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
S23: growing an N-type GaN layer on the undoped GaN layer;
in one embodiment of the invention, the N-type GaN layer is grown in MOCVD at 1100-1150 deg.c and 100-500 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, siH is introduced 4 As an N-type dopant source.
S24: growing a multi-quantum well layer on the N-type GaN layer;
wherein in one embodiment of the invention, the quantum well layers and the quantum barrier layers are periodically grown in MOCVD to form multiple quantum well layers. Wherein the growth temperature of the InGaN well layer is 700-800 ℃, and the growth pressure is 100-300 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
Specifically, in one embodiment of the present invention, the growth method of each quantum barrier layer is as follows:
(I) Growing AlN nano-pillars on the quantum well layer;
wherein the growth temperature of the AlN nano-column is 500-700 ℃ and the growth pressure is 500-600 torr; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 TMAl was introduced as an Al source as a carrier gas. Based on the growth parameters, a plurality of columnar three-dimensional structures distributed at intervals can be grown on the quantum well layer.
Preferably, in one embodiment of the present invention, when the AlN nanopillar grows, the V/III ratio is 1500-2500, and based on this control, the three-dimensional growth tendency of AlN can be further enhanced.
(II) growing AlGaN nano-pillars on the AlN nano-pillars in one-to-one correspondence;
wherein the growth temperature of the AlGaN nano column is 750-850 ℃, and the growth pressure is 300-400 torr; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source. Based on the growth conditions, a nanopillar structure may be formed over the AlN nanopillar, i.eAlGaN nano-pillars.
Preferably, in one embodiment of the present invention, when AlGaN nanopillars are grown, the V/III ratio is 1000-1500; based on this control, the three-dimensional growth tendency of AlGaN can be further enhanced.
(III) growing a GaN two-dimensional layer on the AlGaN nano-pillar;
wherein the growth temperature of the GaN two-dimensional layer is 1300-1400 ℃, and the growth pressure is 200-300 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source. Based on the growth conditions, the GaN two-dimensional layer can continuously grow and gradually merge along the preset direction at the top of the AlGaN nano-pillar, so that the quantum barrier layer with the nano holes is formed.
Preferably, in one embodiment of the present invention, the V/III ratio is 200to 500 when the GaN two-dimensional layer is grown. Based on the growth conditions, the two-dimensional growth trend of the GaN two-dimensional layer can be improved.
S25: growing an electron blocking layer on the multiple quantum well layer;
wherein, in one embodiment of the invention, al is grown periodically in MOCVD a Ga 1-a N layer (a=0.05 to 0.2) and In b Ga 1-b N layers (b=0.1 to 0.5) until an electron blocking layer is obtained; the growth temperature of the two is 900-1000 ℃ and the growth pressure is 100-500 torr. Wherein Al is grown a Ga 1-a Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source. Growth of In b Ga 1-b Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
S26: growing a P-type GaN layer on the electron blocking layer;
wherein, in one embodiment of the invention, the P-type GaN layer is grown in MOCVD at 800-1000 ℃ and at 100-300 torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, CP is introduced 2 Mg is used as a P-type dopant source.
The invention is further illustrated by the following examples:
example 1
The embodiment provides a light emitting diode epitaxial wafer, referring to fig. 1 and 2, which comprises a substrate 1, and a nucleation layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6 and a P-type GaN layer 7 which are sequentially arranged on the substrate 1.
Wherein the substrate 1 is a sapphire substrate, the nucleation layer 2 is an AlN layer, and the thickness of the AlN layer is 30nm. The thickness of the undoped GaN layer 3 was 400nm. The thickness of the N-type GaN layer 4 was 2 μm, the doping element was Si, and the doping concentration of Si was 2.5X10 19 cm -3 。
The multiple quantum well layer 5 has a periodic structure, and the number of periods is 10, and each period is a quantum well layer (InGaN layer) and a quantum barrier layer stacked in this order. Wherein the thickness of the single quantum well layer is 3nm. Each quantum barrier layer 52 includes: the plurality of AlN nano-pillars 521 distributed on the quantum well layer 51 in an array form correspond to the plurality of AlGaN nano-pillars 522 stacked on the AlN nano-pillars 521 one by one, gaN two-dimensional layers 523 stacked on the AlGaN nano-pillars 522 are grown and combined along a preset direction at the top of the AlGaN nano-pillars 522 to form the quantum barrier layer 52 with nano holes 524. Wherein the AlN nano-pillars 521 have a height of 12nm, a diameter of 5nm, and a distance between adjacent AlN nano-pillars 521 is 15nm. The Al composition ratio in the AlN nano-column 521 is 0.62.AlGaN nanopillars 522 have a height of 12nm, a diameter of 5nm, and an Al composition ratio of 0.28. The thickness of the GaN two-dimensional layer 523 is 4nm.
Wherein the electron blocking layer 6 is Al a Ga 1-a N layers (a=0.1) and In b Ga 1-b N layers (b=0.3) alternately grow a periodic structure with a period number of 8. Single Al a Ga 1-a The thickness of the N layer is 6nm, single In b Ga 1-b The thickness of the N layer was 6nm. The doping element of the P-type GaN layer 7 is Mg, and the doping concentration is 2 multiplied by 10 20 cm -3 The thickness was 45nm.
The preparation method for the light-emitting diode epitaxial wafer in the embodiment comprises the following steps:
(1) Providing a substrate;
preferably, in one embodiment of the invention, the substrate is loaded into the MOCVD reaction chamber at H 2 Pretreating for 7min in the atmosphere at 1100 ℃ under 400torr.
(2) Growing a nucleation layer on the substrate;
wherein, PVD is adopted to grow an AlN layer as a nucleation layer.
(3) Growing an undoped GaN layer on the nucleation layer;
wherein, the undoped GaN layer is grown in MOCVD, the growth temperature is 1120 ℃, and the growth pressure is 300torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
(4) Growing an N-type GaN layer on the undoped GaN layer;
wherein, the N-type GaN layer is grown in MOCVD, the growth temperature is 1140 ℃, and the growth pressure is 300torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, siH is introduced 4 As an N-type dopant source.
(5) Growing a multi-quantum well layer on the N-type GaN layer;
wherein the quantum well layer and the quantum barrier layer are periodically grown in MOCVD to form a multi-quantum well layer. Wherein the growth temperature of the InGaN well layer is 760 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
The growth method of each quantum barrier layer is as follows:
(I) Growing AlN nano-pillars on the quantum well layer;
wherein the growth temperature of the AlN nano-column is 580 ℃, and the growth pressure is 560torr; V/III ratio is 2000; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 TMAl was introduced as an Al source as a carrier gas.
(II) growing AlGaN nano-pillars on the AlN nano-pillars in one-to-one correspondence;
wherein the growth temperature of the AlGaN nano-column is 800 ℃, the growth pressure is 380tor, and the V/III ratio is 2000; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source.
(III) growing a GaN two-dimensional layer on the AlGaN nano-pillar;
wherein, the growth temperature of the GaN two-dimensional layer is 1320 ℃, the growth pressure is 220torr, and the V/III ratio is 300. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
(6) Growing an electron blocking layer on the multiple quantum well layer;
wherein Al is periodically grown in MOCVD a Ga 1-a N layer and In b Ga 1-b N layers until an electron blocking layer is obtained; both of them were grown at 950℃and at 300torr. Wherein Al is grown a Ga 1-a Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source. Growth of In b Ga 1-b Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
(7) Growing a P-type GaN layer on the electron blocking layer;
wherein, the P-type GaN layer is grown in MOCVD, the growth temperature is 930 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, CP is introduced 2 Mg is used as a P-type dopant source.
Example 2
The embodiment provides a light emitting diode epitaxial wafer, referring to fig. 1 and 2, which comprises a substrate 1, and a nucleation layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6 and a P-type GaN layer 7 which are sequentially arranged on the substrate 1.
Wherein the substrate 1 is a sapphire substrate, the nucleation layer 2 is an AlN layer, and the thickness of the AlN layer is 30nm. The thickness of the undoped GaN layer 3 was 400nm. The thickness of the N-type GaN layer 4 was 2 μm, the doping element was Si, and the doping concentration of Si was 2.5X10 19 cm -3 。
The multiple quantum well layer 5 has a periodic structure, and the number of periods is 10, and each period is a quantum well layer (InGaN layer) and a quantum barrier layer stacked in this order. Wherein the thickness of the single quantum well layer is 3nm. Each quantum barrier layer 52 includes: the plurality of AlN nano-pillars 521 distributed on the quantum well layer 51 in an array form correspond to the plurality of AlGaN nano-pillars 522 stacked on the AlN nano-pillars 521 one by one, gaN two-dimensional layers 523 stacked on the AlGaN nano-pillars 522 are grown and combined along a preset direction at the top of the AlGaN nano-pillars 522 to form the quantum barrier layer 52 with nano holes 524. Wherein the AlN nano-pillars 521 have a height of 12nm, a diameter of 4nm, and a distance between adjacent AlN nano-pillars 521 is 15nm. The Al composition ratio in the AlN nano-column 521 is 0.62.AlGaN nanopillars 522 have a height of 8nm, a diameter of 4nm, and an Al composition ratio of 0.28. The thickness of the GaN two-dimensional layer 523 is 4nm.
Wherein the electron blocking layer 6 is Al a Ga 1-a N layers (a=0.1) and In b Ga 1-b N layers (b=0.3) alternately grow a periodic structure with a period number of 8. Single Al a Ga 1-a The thickness of the N layer is 6nm, single In b Ga 1-b The thickness of the N layer was 6nm. The doping element of the P-type GaN layer 7 is Mg, and the doping concentration is 2 multiplied by 10 20 cm -3 The thickness was 45nm.
The preparation method for the light-emitting diode epitaxial wafer in the embodiment comprises the following steps:
(1) Providing a substrate;
preferably, in one embodiment of the invention, the substrate is loaded into the MOCVD reaction chamber at H 2 Pretreating for 7min in the atmosphere at 1100 ℃ under 400torr.
(2) Growing a nucleation layer on the substrate;
wherein, PVD is adopted to grow an AlN layer as a nucleation layer.
(3) Growing an undoped GaN layer on the nucleation layer;
wherein, the undoped GaN layer is grown in MOCVD, the growth temperature is 1120 ℃, and the growth pressure is 300torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
(4) Growing an N-type GaN layer on the undoped GaN layer;
wherein, the N-type GaN layer is grown in MOCVD, the growth temperature is 1140 ℃, and the growth pressure is 300torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, siH is introduced 4 As an N-type dopant source.
(5) Growing a multi-quantum well layer on the N-type GaN layer;
wherein the quantum well layer and the quantum barrier layer are periodically grown in MOCVD to form a multi-quantum well layer. Wherein the growth temperature of the InGaN well layer is 760 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
The growth method of each quantum barrier layer is as follows:
(I) Growing AlN nano-pillars on the quantum well layer;
wherein the growth temperature of the AlN nano-column is 580 ℃, and the growth pressure is 560torr; V/III ratio is 2000; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 TMAl was introduced as an Al source as a carrier gas.
(II) growing AlGaN nano-pillars on the AlN nano-pillars in one-to-one correspondence;
wherein the growth temperature of the AlGaN nano-column is 800 ℃, the growth pressure is 380tor, and the V/III ratio is 2000; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source.
(III) growing a GaN two-dimensional layer on the AlGaN nano-pillar;
wherein, the growth temperature of the GaN two-dimensional layer is 1320 ℃, the growth pressure is 220torr, and the V/III ratio is 300. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
(6) Growing an electron blocking layer on the multiple quantum well layer;
wherein Al is periodically grown in MOCVD a Ga 1-a N layer and In b Ga 1-b N layers until an electron blocking layer is obtained; both of them were grown at 950℃and at 300torr. Wherein Al is grown a Ga 1-a Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source. Growth of In b Ga 1-b Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
(7) Growing a P-type GaN layer on the electron blocking layer;
wherein, the P-type GaN layer is grown in MOCVD, the growth temperature is 930 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, CP is introduced 2 Mg is used as a P-type dopant source.
Example 3
The embodiment provides a light emitting diode epitaxial wafer, referring to fig. 1 and 3, which comprises a substrate 1, and a nucleation layer 2, an undoped GaN layer 3, an N-type GaN layer 4, a multiple quantum well layer 5, an electron blocking layer 6 and a P-type GaN layer 7 which are sequentially arranged on the substrate 1.
Wherein the substrate 1 is a sapphire substrate, the nucleation layer 2 is an AlN layer, and the thickness of the AlN layer is 30nm. The thickness of the undoped GaN layer 3 was 400nm. The thickness of the N-type GaN layer 4 was 2 μm, the doping element was Si, and the doping concentration of Si was 2.5X10 19 cm -3 。
The multiple quantum well layer 5 has a periodic structure, and the number of periods is 10, and each period is a quantum well layer (InGaN layer) and a quantum barrier layer stacked in this order. Wherein the thickness of the single quantum well layer is 3nm. Each quantum barrier layer 52 includes: the plurality of AlN nano-pillars 521 distributed on the quantum well layer 51 in an array form correspond to the plurality of AlGaN nano-pillars 522 stacked on the AlN nano-pillars 521 one by one, gaN two-dimensional layers 523 stacked on the AlGaN nano-pillars 522 are grown and combined along a preset direction at the top of the AlGaN nano-pillars 522 to form the quantum barrier layer 52 with nano holes 524. Wherein the AlN nano-pillars 521 have a height of 12nm, a diameter of 4nm, and a distance between adjacent AlN nano-pillars 521 is 15nm. The Al composition ratio in the AlN nano-column 521 is 0.62. The height of the AlGaN nanopillar 522 is 8nm, the AlGaN nanopillar 522 is in a truncated cone shape, the diameter of the AlGaN nanopillar is gradually increased from 4nm to 13nm, and the Al component of the AlGaN nanopillar is 0.28. The thickness of the GaN two-dimensional layer 523 is 4nm.
Wherein the electron blocking layer 6 is Al a Ga 1-a N layers (a=0.1) and In b Ga 1-b N layers (b=0.3) alternately grow a periodic structure with a period number of 8. Single Al a Ga 1-a The thickness of the N layer is 6nm, single In b Ga 1-b The thickness of the N layer was 6nm. The doping element of the P-type GaN layer 7 is Mg, and the doping concentration is 2 multiplied by 10 20 cm -3 The thickness was 45nm.
The preparation method for the light-emitting diode epitaxial wafer in the embodiment comprises the following steps:
(1) Providing a substrate;
preferably, in one embodiment of the invention, the substrate is loaded into the MOCVD reaction chamber at H 2 Pretreating for 7min in the atmosphere at 1100 ℃ under 400torr.
(2) Growing a nucleation layer on the substrate;
wherein, PVD is adopted to grow an AlN layer as a nucleation layer.
(3) Growing an undoped GaN layer on the nucleation layer;
wherein, the undoped GaN layer is grown in MOCVD, the growth temperature is 1120 ℃, and the growth pressure is 300torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
(4) Growing an N-type GaN layer on the undoped GaN layer;
wherein, the N-type GaN layer is grown in MOCVD, the growth temperature is 1140 ℃, and the growth pressure is 300torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, siH is introduced 4 As an N-type dopant source.
(5) Growing a multi-quantum well layer on the N-type GaN layer;
wherein the quantum well layer and the quantum barrier layer are periodically grown in MOCVD to form a multi-quantum well layer. Wherein the growth temperature of the InGaN well layer is 760 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
The growth method of each quantum barrier layer is as follows:
(I) Growing AlN nano-pillars on the quantum well layer;
wherein the growth temperature of the AlN nano-column is 580 ℃, and the growth pressure is 560torr; V/III ratio is 2000; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 TMAl was introduced as an Al source as a carrier gas.
(II) growing AlGaN nano-pillars on the AlN nano-pillars in one-to-one correspondence;
wherein the growth temperature of the AlGaN nano-column is 800 ℃, the growth pressure is 380tor, and the V/III ratio is 1200; during growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source.
(III) growing a GaN two-dimensional layer on the AlGaN nano-pillar;
wherein, the growth temperature of the GaN two-dimensional layer is 1320 ℃, the growth pressure is 220torr, and the V/III ratio is 300. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source.
(6) Growing an electron blocking layer on the multiple quantum well layer;
wherein Al is periodically grown in MOCVD a Ga 1-a N layer and In b Ga 1-b N layers until an electron blocking layer is obtained; both of them were grown at 950℃and at 300torr. Wherein Al is grown a Ga 1-a Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 And H 2 As a carrier gas, TMGa was introduced as a Ga source, and TMAl was introduced as an Al source. Growth of In b Ga 1-b Introducing NH into MOCVD reaction chamber during N layer 3 As N source, N 2 As a carrier gas, TMGa was introduced as a Ga source, and TMIn was introduced as an In source.
(7) Growing a P-type GaN layer on the electron blocking layer;
wherein, the P-type GaN layer is grown in MOCVD, the growth temperature is 930 ℃, and the growth pressure is 200torr. During growth, NH is introduced into the MOCVD reaction chamber 3 As N source, N 2 And H 2 As carrier gas, TMGa is introduced as Ga source, CP is introduced 2 Mg is used as a P-type dopant source.
Comparative example 1
This comparative example provides a light emitting diode epitaxial wafer differing from example 1 in that the quantum barrier layer is a GaN layer having a thickness of 10nm, grown by MOCVD at 860 ℃ under 200torr, and the remainder being the same as example 1.
Comparative example 2
This comparative example provides a light emitting diode epitaxial wafer, which is different from embodiment 1 in that each quantum barrier layer sequentially includes an AlN layer, an AlGaN layer, and a GaN layer laminated on a quantum well layer; the AlN layer has a thickness of 12nm, the AlGaN layer has a thickness of 12nm, and the GaN layer has a thickness of 4nm, which are all of a layered structure.
Wherein the AlN layer is grown by MOCVD, the growth temperature is 1000 ℃, the growth pressure is 150torr, and the V/III ratio is 250.AlGaN layer grows by MOCVD, the growth temperature is 1100 ℃, the growth pressure is 200torr, and the V/III ratio is 200; the GaN layer was grown by MOCVD at 1100℃under 200torr with a V/III ratio of 200.
The remainder was the same as in example 1.
Comparative example 3
This comparative example provides a light emitting diode epitaxial wafer which is different from example 1 in that a GaN two-dimensional layer is not included, and accordingly, in the manufacturing method, a step of manufacturing the layer is not included. The remainder was the same as in example 1.
Comparative example 4
This comparative example provides a light emitting diode epitaxial wafer which is different from example 1 in that AlGaN nanopillars are not included, and accordingly, in the manufacturing method, a step of manufacturing the layer is not included. The remainder was the same as in example 1.
Comparative example 5
This comparative example provides a light emitting diode epitaxial wafer which is different from example 1 in that AlN nano-pillars are not included, and accordingly, in the manufacturing method, a step of manufacturing the layer is not included. The remainder was the same as in example 1.
The light emitting diode epitaxial wafers obtained in examples 1 to 3 and comparative examples 1 to 5 were tested by the following specific test methods:
(1) The prepared epitaxial wafer adopts an IM-1130 type PL spectrometer to measure the luminescence wavelength of the epitaxial wafer at 1mA and 5mA, and calculates the uniformity of the luminescence wavelength. Wherein, emission wavelength uniformity = emission wavelength (1 mA) -emission wavelength (5 mA);
(2) Preparing epitaxial wafers into chips with vertical structures of 5mil multiplied by 7mil, and testing the luminescence brightness of the chips under 120mA and 60mA currents respectively;
the specific results are as follows:
luminous intensity (120 mA)/mW Luminous intensity (60 mA)/mW Wavelength uniformity/nm of luminescence
Example 1 198.5 68.5 3.5
Example 2 199.8 69.6 3.3
Example 3 202.5 72.5 2.9
Comparative example 1 191.2 60.1 6.8
Comparative example 2 193.1 58.4 5.3
Comparative example 3 180.2 50.5 6.9
Comparative example 4 192.6 61.3 5.5
Comparative example 5 191.5 60.8 5.8
As can be seen from the table, when the quantum barrier layer in the conventional light emitting diode structure (comparative example 1) is replaced with the quantum barrier layer structure of the present invention, the light emission luminance at different currents is significantly improved, especially the light emission luminance at low currents is improved more, and the uniformity of the light emission wavelength is also improved.
Further, as can be seen from comparison of example 1 with comparative examples 2 to 5, when the structure of the quantum barrier layer in the present invention is changed, it is difficult to effectively exert the effect of improving luminance.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (10)

1. A light-emitting diode epitaxial wafer comprises a substrate, and a nucleation layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer which are sequentially arranged on the substrate; the multi-quantum well layer is of a periodic structure, the period number is 2-15, and each period comprises a quantum well layer and a quantum barrier layer which are sequentially laminated; each quantum barrier layer comprises:
a plurality of AlN nano-pillars distributed on the quantum well layer in an array manner;
a plurality of AlGaN nano-pillars stacked on the AlN nano-pillars in one-to-one correspondence;
and the GaN two-dimensional layer is stacked on the AlGaN nano column, and grows and merges along the preset direction at the top of the AlGaN nano column to form a quantum barrier layer with nano holes.
2. The light emitting diode epitaxial wafer of claim 1, wherein the aspect ratio of the AlN nanorods is greater than the aspect ratio of the AlGaN nanorods.
3. The light-emitting diode epitaxial wafer of claim 1, wherein the height of the AlN nano-pillars is 10 to 20nm, the diameter is 2 to 5nm, the al composition ratio is 0.6 to 0.7, and the distance between adjacent AlN nano-pillars is 10 to 200nm.
4. The light-emitting diode epitaxial wafer of claim 1, wherein the AlGaN nano-pillars have a height of 5-10 nm, a diameter of 2-5 nm, and an al composition ratio of 0.25-0.3.
5. The light-emitting diode epitaxial wafer of claim 1, wherein the GaN two-dimensional layer has a thickness of 2-5 nm.
6. The light-emitting diode epitaxial wafer according to any one of claims 1 to 5, wherein the diameter of the AlGaN nanopillars gradually increases from 2 to 5nm to 10 to 20nm along the epitaxial growth direction.
7. A method for preparing the light-emitting diode epitaxial wafer, which is used for preparing the light-emitting diode epitaxial wafer according to any one of claims 1 to 6, and is characterized by comprising the following steps:
providing a substrate, and sequentially growing a nucleation layer, an undoped GaN layer, an N-type GaN layer, a multiple quantum well layer, an electron blocking layer and a P-type GaN layer on the substrate; the multi-quantum well layer is of a periodic structure, and each period comprises a quantum well layer and a quantum barrier layer which are sequentially stacked; each quantum barrier layer comprises:
a plurality of AlN nano-pillars distributed on the quantum well layer in an array manner;
a plurality of AlGaN nano-pillars stacked on the AlN nano-pillars in one-to-one correspondence;
and the GaN two-dimensional layer is stacked on the AlGaN nano column, and grows and merges along the preset direction at the top of the AlGaN nano column to form a quantum barrier layer with nano holes.
8. The method for preparing the light-emitting diode epitaxial wafer according to claim 7, wherein the AlN nano-pillar has a growth temperature of 500-700 ℃ and a growth pressure of 500-600 torr;
the growth temperature of the AlGaN nano column is 750-850 ℃, and the growth pressure is 300-400 torr;
the growth temperature of the GaN two-dimensional layer is 1300-1400 ℃, and the growth pressure is 200-300 torr.
9. The method for preparing a light-emitting diode epitaxial wafer according to claim 7 or 8, wherein the V/III ratio is 1500-2500 when the AlN nanopillar grows;
when the AlGaN nano column grows, the V/III ratio is 1000-1500;
when the GaN two-dimensional layer grows, the V/III ratio is 200-500.
10. A light emitting diode comprising the light emitting diode epitaxial wafer according to any one of claims 1 to 6.
CN202310372756.8A 2023-04-10 2023-04-10 Light-emitting diode epitaxial wafer, preparation method thereof and light-emitting diode Pending CN116404079A (en)

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