CN116377416B - Scribing cutter and manufacturing method thereof - Google Patents
Scribing cutter and manufacturing method thereof Download PDFInfo
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- CN116377416B CN116377416B CN202310257202.3A CN202310257202A CN116377416B CN 116377416 B CN116377416 B CN 116377416B CN 202310257202 A CN202310257202 A CN 202310257202A CN 116377416 B CN116377416 B CN 116377416B
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- diamond coating
- diamond
- dicing
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- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000010432 diamond Substances 0.000 claims abstract description 190
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 190
- 239000011248 coating agent Substances 0.000 claims abstract description 129
- 238000000576 coating method Methods 0.000 claims abstract description 129
- 239000000758 substrate Substances 0.000 claims abstract description 88
- 238000000151 deposition Methods 0.000 claims abstract description 68
- 238000012545 processing Methods 0.000 claims abstract description 17
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 65
- 238000005229 chemical vapour deposition Methods 0.000 claims description 35
- 239000000843 powder Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 26
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 15
- 229910052750 molybdenum Inorganic materials 0.000 claims description 15
- 239000011733 molybdenum Substances 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000000725 suspension Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 230000002045 lasting effect Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 description 54
- 238000005520 cutting process Methods 0.000 description 51
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 36
- 239000002245 particle Substances 0.000 description 25
- 239000011159 matrix material Substances 0.000 description 19
- 238000012360 testing method Methods 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 18
- 239000001257 hydrogen Substances 0.000 description 18
- 229910052739 hydrogen Inorganic materials 0.000 description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 238000011056 performance test Methods 0.000 description 11
- 238000001514 detection method Methods 0.000 description 9
- 238000000227 grinding Methods 0.000 description 9
- 238000007373 indentation Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000004050 hot filament vapor deposition Methods 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000004663 powder metallurgy Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
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- 239000012535 impurity Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses a dicing blade and a preparation method thereof, wherein the dicing blade comprises a blade body, and tooth grooves are formed in the edge of the blade body; the blade body includes a substrate and a diamond coating deposited on the substrate. The preparation method of the dicing blade comprises the steps of pre-treating a substrate, depositing a diamond coating, then forming tooth grooves or depositing the diamond coating after forming the tooth grooves. The application has the advantages that the dicing blade provided by the application is a dicing blade deposited with a diamond coating with high purity, high hardness and strong film base adhesive force, so the dicing blade provided by the application has long service life, lasting shape maintaining capability and sharp blade edge; meanwhile, the thickness limit of the traditional dicing blade can be broken through, and fine kerf processing is achieved.
Description
Technical Field
The application relates to the technical field of cutting knives, in particular to a dicing knife and a manufacturing method thereof.
Background
At present, the semiconductor packaging scribing process mainly adopts two modes, namely laser scribing and mechanical grinding scribing. Among them, laser dicing has the following disadvantages: firstly, laser scribing cannot be performed by high power, and the heat generated by the high power cutting is easy to destroy the structure of a chip; second, laser scribing cannot achieve a full cut, and still requires a secondary operation using mechanical grinding scribing. Therefore, mechanical grinding dicing is generally used to perform semiconductor package dicing. In mechanical grinding dicing, a dicing blade is typically used to cut large wafers into numerous small chips. Therefore, the performance of the dicing blade will directly affect the quality of the chip and the yield of the semiconductor process.
With the rapid development of the third generation of semiconductors, the occupancy of wafers such as single crystal silicon carbide, gallium oxide, gallium nitride and the like is gradually increasing. The hardness of the wafer is far greater than that of a silicon-based material, so that the wafer is difficult to cut continuously by adopting a traditional dicing blade, and the production efficiency and the production cost are greatly influenced. Meanwhile, with the development of advanced processes of semiconductors, the chip structure is more and more complex, and the space between chips is smaller and smaller, so that the cutting space is narrower and the requirements on cutting seams are higher and higher. However, the thickness limit of the conventional dicing blade is 15 μm, and it is difficult to meet the requirements of more advanced processes.
The thickness of the existing ultrathin dicing blade is generally 15-30 mu m, and the ultrathin dicing blade is mainly prepared by three processes, namely an electroplating process, a powder metallurgy hot-pressing process and a resin bond pressing process. However, the ultrathin dicing blade prepared by adopting the three processes is seriously dependent on import, and almost no substitute product exists in China; moreover, the ultrathin dicing blade is limited by the preparation process, so that the concentration of diamond on the ultrathin dicing blade is not high. Therefore, the ultra-thin dicing blade manufactured by the three processes has limitations in service life and kerf width.
In view of the foregoing, there is an urgent need to develop a dicing blade that can achieve efficient cutting, fine kerf processing, and long life to solve the problems existing in the prior art.
Disclosure of Invention
In order to solve at least one technical problem, a dicing blade capable of realizing efficient cutting, fine kerf processing and long service life is developed, and the application provides a dicing blade and a preparation method thereof.
In one aspect, the dicing blade provided by the application comprises a blade body, wherein a tooth slot is formed at the edge of the blade body; the blade body includes a substrate and a diamond coating deposited on the substrate.
By adopting the technical scheme, the dicing blade provided by the application is a dicing blade deposited with a diamond coating, wherein the diamond coating is a compact diamond coating, and the components of the diamond coating are pure diamond and are not doped with any other components; in the prior art, the volume concentration of diamond of the ultrathin dicing blade prepared by adopting an electroplating process, a powder metallurgy hot-pressing process or a resin bond pressing process is generally only 10-30%. Compared with the diamond coating, the dicing cutter provided by the application has the advantages of high purity, high hardness and strong film-based adhesive force. Therefore, the dicing blade provided by the application has long service life, lasting shape maintaining capability and sharp blade edge, and can realize the purpose of continuously cutting a wafer with high hardness when the dicing blade is used for mechanically grinding and dicing, thereby improving the production efficiency and reducing the production cost.
In addition, by adopting the technical scheme, the dicing blade provided by the application is provided with tooth grooves at the edge of the blade body; in the prior art, the ultrathin dicing blade is designed continuously and circumferentially, and no tooth slot is formed on the ultrathin dicing blade due to the size and strength of the ultrathin dicing blade. In the existing dicing blade, tooth grooves are only manufactured when the thickness of the dicing blade exceeds 0.5 mm. Compared with the existing ultrathin dicing blade, the dicing blade provided by the application has the advantages that the unique tooth slot can be formed on the blade body with any thickness, so that the chip removal channel can be increased, and the cutting speed of the dicing blade can be improved. The unique tooth slot is combined with the deposited diamond coating, so that the dicing cutter provided by the application has excellent mechanical strength and cutting sharpness; meanwhile, the dicing blade provided by the application can break through the thickness limit of 15 mu m of the traditional dicing blade and reach the thickness level of 8 mu m, so that the fine kerf processing is realized.
Optionally, the diamond coating is circumferentially deposited on one side of the edge of the substrate along the edge of the substrate, and the tooth slot is circumferentially formed on the diamond coating along the diamond coating.
By adopting the technical scheme, the dicing blade provided by the application is a dicing blade deposited with the diamond coating, the diamond coating has the characteristic of high hardness, and the tooth grooves are formed in the diamond coating, so that the problem that the outer circle of the diamond coating adopts a continuous structure and is unfavorable for exposing diamond can be avoided, the tooth grooves can enable the diamond to be exposed naturally, and the cutting sharpness of the dicing blade is greatly improved while the cutting quality is not influenced.
Optionally, the tooth grooves are formed on the edge of the substrate along the circumferential direction of the edge of the substrate, and the diamond coating is deposited on the edge of the substrate along the edge of the substrate provided with the tooth grooves.
By adopting the technical scheme, the dicing blade provided by the application is a dicing blade deposited with the diamond coating, the diamond coating has the characteristic of high hardness, and the diamond coating is deposited on the edge of the substrate provided with the tooth grooves, so that the diamond coating is deposited on the edge of the substrate including the tooth grooves, and the service life of the dicing blade can be prolonged; meanwhile, by utilizing the matching between the tooth grooves and the diamond coating, the deposited diamond coating can firmly wrap the substrate while the cutting efficiency is improved, and the diamond coating has high-strength film-based adhesive force and is not easy to fall off.
Optionally, the tooth shape of the tooth groove is any one of a U shape and a ladder shape.
By adopting the technical scheme, the tooth grooves formed in the dicing blade are specific, so that the cutting efficiency and the cutting sharpness of the dicing blade can be further improved.
Further optionally, an included angle between the tooth shape of the tooth slot and the radial direction of the substrate is 0-30 degrees.
By adopting the technical scheme, the tooth shape of the tooth slot formed on the dicing blade and the radial direction of the matrix form a specific included angle, so that the cutting efficiency and the cutting sharpness of the dicing blade can be further improved.
In a second aspect, the present application provides a method for manufacturing the dicing blade, including the following steps:
a1, cleaning a substrate for the first time; presetting diamond seed crystals on the surface of the substrate after the first cleaning by adopting diamond powder suspension; cleaning the substrate for the second time and drying;
a2, circumferentially depositing a diamond coating on one side of the edge of the substrate treated in the step A1 by adopting a chemical vapor deposition method;
and A3, carrying out micro-tooth processing treatment on the diamond coating deposited in the step A2, and forming tooth grooves along the circumferential direction of the diamond coating to obtain the dicing blade.
By adopting the technical scheme, the preparation method of the dicing blade provided by the application adopts the mode of firstly depositing the diamond coating on one side of the edge of the substrate in the circumferential direction and then forming the tooth slot along the circumferential direction of the diamond coating, and can be applied to the process of preparing the dicing blade by adopting a thicker substrate; meanwhile, the mode of depositing the diamond coating firstly is adopted, deformation of the deposited diamond coating can be avoided, and then a tooth slot is formed in the diamond coating, so that the diamond is naturally exposed, the sharpness of the dicing blade can be improved while the cutting quality is not affected, and the cutting efficiency and the cutting sharpness of the dicing blade are improved.
Optionally, step Aa is further included between the step A2 and the step A3, where the other side of the edge of the substrate, where the diamond coating is not deposited, is processed, and part of the substrate material is removed, so that the diamond coating is partially attached to one side of the edge of the substrate.
By adopting the technical scheme, the preparation method of the dicing blade provided by the application further comprises the step of removing the matrix material, so that the deformation of the deposited diamond coating can be further avoided, and the diamond can be further exposed naturally.
Optionally, the material of the substrate is selected from any one of tungsten, molybdenum, titanium, silicon nitride and silicon carbide.
In a third aspect, the present application provides a method for preparing the above-mentioned another dicing blade, comprising the steps of:
b1, processing a substrate, and forming tooth grooves along the circumferential direction of the edge of the substrate;
b2, cleaning the substrate treated in the step B1 for the first time; presetting diamond seed crystals on the surface of the substrate after the first cleaning by adopting diamond powder suspension; cleaning the substrate for the second time and drying;
and B3, depositing a diamond coating on the edge of the substrate treated in the step B2 by adopting a chemical vapor deposition method to prepare the dicing blade.
By adopting the technical scheme, the preparation method of the dicing blade provided by the application adopts the mode of firstly forming tooth grooves along the circumferential direction of the edge of the substrate and then depositing the diamond coating on the edge of the substrate, and can be applied to the process of preparing the dicing blade by adopting an ultrathin substrate; meanwhile, by adopting the mode of firstly forming the tooth grooves along the circumferential direction of the edge of the matrix, diamond can be grown on the outer circle of the matrix in the process of depositing the diamond coating, and diamond can also be grown in the tooth grooves, so that the cutting efficiency is improved, the film-based adhesive force of the diamond coating on the matrix is enhanced, the diamond coating is not easy to fall off, and the service life of the dicing blade is prolonged.
In addition, by adopting the technical scheme, the mode of firstly forming the tooth grooves along the circumferential direction of the edge of the matrix is adopted, and the mechanism and the speed of growing diamond in the tooth grooves are different from those of the diamond on the outer circle of the matrix, so that the grown diamond is low in the radial direction of the matrix, the inner part of the tooth grooves is low, the outer circle of the matrix is protruded, the natural exposure of the diamond is formed, the sharpness of the dicing blade can be improved, and the cutting efficiency and the cutting sharpness of the dicing blade are improved.
Optionally, the method further comprises a step B4 of performing grinding and finishing treatment on the diamond coating deposited in the step B3.
By adopting the technical scheme, the preparation method of the other scribing cutter provided by the application further comprises the step of carrying out grinding and trimming treatment on the deposited diamond coating, and the operation can further improve the precision and sharpness of the scribing cutter, so that the cutting efficiency and cutting sharpness of the scribing cutter are further improved.
Optionally, the material of the substrate is selected from any one of molybdenum, tungsten and titanium.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the dicing blade provided by the application is a dicing blade deposited with a diamond coating, the diamond coating is a compact diamond coating, and the components of the diamond coating are pure diamond and are not doped with any impurity, so that the diamond coating has the characteristics of high purity, high hardness and strong film-based adhesive force, and therefore, the dicing blade provided by the application has long service life, lasting shape maintenance capability and sharp blade edge, and when the dicing blade provided by the application is used for mechanically grinding and dicing, the purpose of continuously cutting a wafer with high hardness can be realized, so that the production efficiency is improved and the production cost is reduced.
2. The dicing blade provided by the application can be provided with the tooth grooves on the blade body with any thickness, so that the dicing blade provided by the application can be used for increasing the chip removal channel, thereby improving the cutting speed of the dicing blade; meanwhile, the dicing blade provided by the application can ensure that the dicing blade provided by the application has excellent mechanical strength and cutting sharpness by utilizing the unique tooth slot and the deposited diamond coating, and can break through the thickness limit of 15 mu m of the traditional dicing blade, thereby realizing the processing of fine kerfs.
3. The preparation method of the dicing blade provided by the application adopts the mode of firstly depositing the diamond coating on one side of the edge of the matrix in the circumferential direction and then forming the tooth slot along the circumferential direction of the diamond coating, and can be applied to the process of preparing the dicing blade by adopting a thicker matrix; simultaneously, the deformation of the deposited diamond coating can be avoided, and the diamond can be naturally exposed, so that the sharpness of the dicing blade can be improved while the cutting quality is not influenced, and the cutting efficiency and the cutting sharpness of the dicing blade are improved.
4. The other preparation method of the dicing blade provided by the application adopts a mode of firstly forming tooth grooves along the circumferential direction of the edge of the substrate and then depositing a diamond coating on the edge of the substrate, and can be applied to the process of preparing the dicing blade by adopting an ultrathin substrate; meanwhile, diamond can grow out in the excircle and tooth grooves of the matrix, the film base adhesive force of the diamond coating on the matrix is enhanced while the cutting efficiency is improved, the diamond coating is not easy to fall off, and the service life of the dicing blade is prolonged.
Drawings
Fig. 1 is a schematic view of the overall structure of a dicing blade according to embodiment 1 of the application;
fig. 2 is a schematic sectional view of a dicing blade according to embodiment 1 of the application;
FIG. 3 is an enlarged view at B in FIG. 2;
fig. 4 is an enlarged view at a in fig. 1;
FIG. 5 is a schematic view showing the overall structure of a dicing blade according to embodiment 10 of the application;
FIG. 6 is a schematic view showing the overall structure of a dicing blade according to embodiment 16 of the application;
fig. 7 is an enlarged view at C in fig. 6;
FIG. 8 is a schematic view showing the overall structure of a dicing blade according to embodiment 17 of the application;
fig. 9 is an enlarged view of D in fig. 8;
FIG. 10 is an electron microscope image of a dicing blade according to example 10 of the present application after tooth grooves are formed in a diamond coating layer deposited thereon;
FIG. 11 is an electron microscope image of a dicing blade according to example 16 of the present application after tooth grooves are formed in the diamond coating deposited thereon;
FIG. 12 is an electron microscope image of the dicing blade according to example 17 of the present application after tooth grooves are formed in the diamond coating layer;
FIG. 13 is a schematic view showing the overall structure of a dicing blade according to embodiment 20 of the application;
FIG. 14 is a schematic cross-sectional view of a dicing blade according to embodiment 20 of the application;
fig. 15 is an enlarged view at F in fig. 14;
fig. 16 is an enlarged view at E in fig. 13;
FIG. 17 is an electron microscopic examination of the surface of a diamond coating deposited on a dicing blade according to example 20 of the application;
FIG. 18 is an electron microscopic examination of the surface of a diamond coating deposited on a dicing blade according to example 29 of the application;
fig. 19 is a schematic view showing the overall structure of a dicing blade according to embodiment 35 of the application;
fig. 20 is an enlarged view at G in fig. 19;
FIG. 21 is a schematic view showing the overall structure of a dicing blade according to embodiment 36 of the application;
fig. 22 is an enlarged view at H in fig. 21.
Reference numerals illustrate: 1. a blade body; 1a, a matrix; 1b, diamond coating; 2. tooth slots.
Detailed Description
The application is described in further detail below with reference to the drawings and examples.
The application designs a dicing blade which comprises a blade body, wherein tooth grooves are formed in the edge of the blade body; the blade body includes a substrate and a diamond coating deposited on the substrate.
The applicant found when improving the structure of the dicing blade, at present, domestic semiconductor companies mainly adopt ultra-thin dicing blades manufactured by foreign companies, and most of the ultra-thin dicing blades are manufactured by electroplating technology, powder metallurgy hot pressing technology or resin bond pressing technology, and the working layer of the ultra-thin dicing blade manufactured by the technology is adhered with diamond, but the volume concentration of the diamond is not high, and cannot achieve the effect of hundred percent pure diamond.
Therefore, the ultra-thin dicing blade has a short lifetime and poor hardness, and it is difficult to realize continuous dicing of hard material wafers. Therefore, it is necessary to develop a dicing blade with high shape maintenance capability and high sharpness, that is, it is necessary to deposit a diamond coating on the substrate of the dicing blade, so as to achieve the combination of grinding and cutting, thereby improving the production efficiency and yield of chips.
In addition, the applicant further found that the existing ultra-thin dicing blade is of continuous circumferential design, and no tooth slot is formed on the dicing blade due to the size and strength of the dicing blade itself. Therefore, the applicant adopts a mode of forming tooth grooves at the edge of the blade body of the dicing blade with any thickness to enlarge the chip removing channel of the dicing blade so as to improve the cutting speed of the dicing blade. Meanwhile, the unique tooth grooves are combined with the deposited diamond coating to generate a synergistic effect, namely, the dicing cutter provided by the application can be ensured to have excellent mechanical strength and cutting sharpness.
In the above technical solution, optionally, the diamond coating is circumferentially deposited on one side of the edge of the substrate along the edge of the substrate, and the tooth slot is circumferentially opened on the diamond coating along the diamond coating.
The applicant has further found that when dicing blades are prepared with thicker substrates, if the diamond coating is deposited directly on the edges of the substrate, it is difficult to achieve fine kerf processing due to the thicker substrate. Thus, in the fabrication of dicing blades using thicker substrates, it is necessary to deposit a diamond coating on one side of the substrate edge along the perimeter of the substrate. At this time, the deposited diamond coating is in a continuous circumferential structure, so that the deposited diamond cannot be timely exposed. In this case, then, the cutting sharpness of the dicing blade is not high. Therefore, the applicant adopts a mode of opening the unique tooth slot on the diamond coating, so that the diamond is naturally exposed, and the cutting sharpness of the dicing blade is greatly improved while the cutting quality is not influenced.
In the above technical solution, optionally, the tooth grooves are formed on the edge of the substrate along the circumferential direction of the edge of the substrate, and the diamond coating is deposited on the edge of the substrate along the edge of the substrate where the tooth grooves are formed.
Dicing blades made for ultra-thin substrates do not require a diamond coating to be deposited on one side of the substrate edge, but rather the diamond coating may be deposited directly on the substrate edge along the substrate edge. In this case, it is necessary to consider not only the problem of diamond exposure but also whether the diamond coating is easily detached. Therefore, the applicant adopts a mode of arranging the unique tooth grooves on the edge of the matrix and then depositing the diamond coating along the edge of the matrix provided with the tooth grooves, so that the deposited diamond coating has stronger film-based adhesive force while ensuring natural exposure of diamond, and the diamond coating firmly wraps the matrix and is not easy to fall off.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
Examples 1 to 19
The following are specific embodiments 1 to 19 of the present application, and embodiments 1 to 19 respectively provide a dicing blade, including a blade body 1, and a tooth slot 2 is provided at the edge of the blade body 1; wherein the blade body 1 comprises a substrate 1a and a diamond coating 1b deposited on the substrate 1 a.
Specifically, in the dicing blade provided in examples 1 to 19, based on example 1, referring to fig. 1, example 1 provides a dicing blade, referring to fig. 2, a diamond coating 1b is circumferentially deposited on one side of the edge of the substrate 1a along the edge of the substrate 1a, and an enlarged view referring to fig. 3, a tooth slot 2 is circumferentially opened on the diamond coating 1b along the diamond coating 1b, and the manufacturing method of the dicing blade includes the following steps:
example 1
A1, selecting silicon carbide as a matrix material, and adopting absolute ethyl alcohol to clean a matrix 1a for the first time; ultrasonic processing is carried out on the surface of the substrate 1a after the first cleaning by adopting diamond powder suspension, and diamond seed crystals are preset; sequentially adopting absolute ethyl alcohol and deionized water to carry out second cleaning and drying on the substrate 1 a; in the diamond powder suspension, the diamond powder is of mixed granularity, the mass fraction of the diamond powder with the granularity of 5 mu m is 50%, the mass fraction of the diamond powder with the granularity of 10 mu m is 50%, and absolute ethyl alcohol is adopted as the solvent;
a2, circumferentially depositing a diamond coating 1b on one side of the edge of the substrate 1a treated in the step A1 by adopting a chemical vapor deposition method; wherein, the chemical vapor deposition method is a direct current arc spraying chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 900 c,
cavity pressure: 3.5kPa of the total pressure of the catalyst,
deposition time: the time period of the reaction is 1.5 hours,
hydrogen flow rate: a 4-SLM is used for the processing of the data,
argon flow rate: an 8-SLM (micro-electro-mechanical systems),
methane flow rate: ch4/h2=3%;
a3, carrying out micro-tooth processing treatment on the diamond coating 1b deposited in the step A2, and circumferentially arranging U-shaped tooth grooves along the diamond coating 1b, wherein an included angle between the U-shaped tooth grooves and the radial direction of the substrate 1a is 0 degrees, so as to prepare the dicing blade, as shown in fig. 4.
Example 2
The difference between this embodiment and embodiment 1 is that in step A1, tungsten is selected as the base material; in the step A2, the chemical vapor deposition method is a direct current arc spraying chemical vapor deposition method, and deposition parameters are as follows:
deposition temperature: 900 c,
cavity pressure: 3.5kPa of the total pressure of the catalyst,
deposition time: the time period of the reaction is 1.5 hours,
hydrogen flow rate: a 4-SLM is used for the processing of the data,
argon flow rate: a 6-SLM of the image processing system,
methane flow rate: ch4/h2=2.5%.
Example 3
The difference between this example and example 1 is that in step A1, molybdenum is selected as the base material; in the step A2, the chemical vapor deposition method is a direct current arc spraying chemical vapor deposition method, and deposition parameters are as follows:
deposition temperature: 950 c,
cavity pressure: 4.5kPa of the total pressure of the ink,
deposition time: the time period of the reaction is 2 hours,
hydrogen flow rate: 5.5 the number of the SLMs,
argon flow rate: the number of the 10 SLM's,
methane flow rate: ch4/h2=3.5%.
Example 4
The difference between this embodiment and embodiment 1 is that in step A1, tungsten is selected as the base material; in the step A2, the chemical vapor deposition method is a microwave plasma chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 850 c,
cavity pressure: 4.5kPa of the total pressure of the ink,
deposition time: the time period of the reaction is 8 hours,
hydrogen flow rate: 390sccm of the total,
methane flow rate: ch4/h2=3%.
Example 5
The difference between this embodiment and embodiment 1 is that in step A1, titanium is selected as the base material; in the step A2, the chemical vapor deposition method is a microwave plasma chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 850 c,
cavity pressure: the pressure of the air is 4kPa,
deposition time: the time period of the reaction is 7 hours,
hydrogen flow rate: 300sccm of the total length of the glass,
methane flow rate: ch4/h2=2.5%.
Example 6
The difference between this embodiment and embodiment 1 is that in step A1, silicon nitride is selected as the base material; in the step A2, the chemical vapor deposition method is a microwave plasma chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 900 c,
cavity pressure: the pressure of the air is 8kPa,
deposition time: the time period of the reaction is 10 hours,
hydrogen flow rate: 500sccm of the total length of the glass,
methane flow rate: ch4/h2=3%.
Example 7
The difference between this embodiment and embodiment 1 is that in step A1, tungsten is selected as the base material; in the step A2, the chemical vapor deposition method is a hot filament chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 880 c,
cavity pressure: the pressure of the gas was set at 6.2kPa,
deposition time: the time period of the reaction is 7.5 hours,
hydrogen flow rate: 430sccm of the total length of the glass,
methane flow rate: ch4/h2=2.5%.
Example 8
The difference between this example and example 1 is that in step A1, molybdenum is selected as the base material; in the step A2, the chemical vapor deposition method is a hot filament chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 860 c,
cavity pressure: the pressure of the air is 5kPa,
deposition time: the time period of the reaction is 7 hours,
hydrogen flow rate: 300sccm of the total length of the glass,
methane flow rate: ch4/h2=2.5%.
Example 9
The difference between this embodiment and embodiment 1 is that in step A1, titanium is selected as the base material; in the step A2, the chemical vapor deposition method is a hot filament chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 900 c,
cavity pressure: the pressure of the air is 8kPa,
deposition time: the time period of the reaction is 10 hours,
hydrogen flow rate: 500sccm of the total length of the glass,
methane flow rate: ch4/h2=4%.
Bond strength test performance test was performed on diamond coating layers 1b deposited on dicing knives prepared in examples 1 to 9: in the dicing blade provided in examples 1 to 9, the bonding force between the diamond coating 1b and the substrate 1a was measured by the indentation method, and the coating indentation strength of the diamond coating 1b was recorded; the detection values are recorded in table 1.
Table 1 summary of results of binding strength measurements for examples 1 to 9
Referring to table 1, the coating indentation strength of the dicing knives provided in examples 1 to 9 were above 1390N. Therefore, the dicing blade provided in examples 1 to 9 can meet the cutting requirements of the dicing blade. Meanwhile, the dicing blade provided in example 1 was the highest in coating indentation strength. Thus, embodiment 1 is a preferred embodiment among embodiments 1 to 9.
Example 10
This embodiment differs from embodiment 1 in that step A2 and step A3 further comprise a step Aa of processing the other side of the edge of the substrate 1a where the diamond coating 1b is not deposited, and, referring to fig. 5, removing a part of the substrate 1a material so that the diamond coating 1b is partially bonded to one side of the edge of the substrate 1a, so that a part of the diamond coating 1b deposited on one side of the edge of the substrate 1a is completely exposed.
Dicing blade performance tests were performed on the dicing blades produced in example 1 and example 10; the test items and test results are recorded in table 2.
Table 2 summary of the test results for the dicing blade performance of example 1 and example 10
Referring to table 2, example 10 provided a dicing blade having a thickness of 8 μm, and example 10 provided a dicing blade that was thinner and better in cutting quality than the dicing blade provided in example 1. Thus, embodiment 10 is a preferred embodiment among embodiment 1 and embodiment 10.
Example 11
The difference between this example and example 10 is that in step A1, the diamond powder is in a single particle size, 20 μm in size, and absolute ethanol is used as the solvent.
Example 12
The difference between this example and example 10 is that in step A1, the diamond powder is in a single particle size, the particle size is 1 μm, and absolute ethanol is used as the solvent.
Example 13
The difference between this example and example 10 is that in step A1, the diamond powder is mixed in particle size, the mass fraction of diamond powder with particle size of 1 μm is 40%, the mass fraction of diamond powder with particle size of 10 μm is 60%, and absolute ethanol is used as the solvent.
Example 14
The difference between this example and example 10 is that in step A1, the diamond powder is mixed in particle size, the mass fraction of diamond powder having a particle size of 10 μm is 65%, the mass fraction of diamond powder having a particle size of 25 μm is 35%, and absolute ethanol is used as the solvent.
Example 15
The difference between this example and example 10 is that in step A1, the diamond powder is mixed in particle size, the mass fraction of diamond powder with particle size of 25 μm is 75%, the mass fraction of diamond powder with particle size of 50 μm is 25%, and absolute ethanol is used as the solvent.
Dicing blade performance tests were performed on the dicing blades produced in example 10 and examples 11 to 15; the test items and test results are recorded in table 3.
Table 3 summary of the test results for the performance of the dicing saw of example 10 and examples 11 to 15
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Referring to table 3, the dicing blade provided in example 10 had better cutting quality than the dicing blades provided in examples 11 to 15. Thus, embodiment 10 is a preferred embodiment among embodiment 10 and embodiments 11 to 15.
Example 16
Referring to fig. 6, the difference between this embodiment and embodiment 10 is that in step A3, stepped tooth grooves are formed along the circumferential direction of the diamond coating 1b, and the included angle between the stepped tooth grooves and the radial direction of the base 1a is 0 ° as referring to fig. 7.
Example 17
Referring to fig. 8, the difference between this embodiment and embodiment 10 is that in step A3, a U-shaped tooth groove is formed along the circumferential direction of the diamond coating 1b, and the angle between the U-shaped tooth groove and the radial direction of the substrate 1a is 20 ° as shown in fig. 9.
The dicing blade obtained in example 10 and examples 16 to 17 was subjected to electron microscopic examination to examine the grain density and grain distribution after the tooth grooves 2 were formed in the diamond coating 1b deposited on the dicing blade.
Fig. 10 shows an electron microscope image of the dicing blade according to example 10 after the tooth grooves 2 are formed in the diamond coating 1b deposited on the dicing blade, fig. 11 shows an electron microscope image of the dicing blade according to example 16 after the tooth grooves 2 are formed in the diamond coating 1b deposited on the dicing blade, and fig. 12 shows an electron microscope image of the dicing blade according to example 17 after the tooth grooves 2 are formed in the diamond coating 1b deposited on the dicing blade.
According to the detection result of an electron microscope, after tooth grooves 2 are formed on the diamond coating 1b deposited on the dicing blade provided in example 10 and examples 16 to 17, the diamond coating 1b has no obvious defect points, and the grains are uniformly distributed and have uniform grain sizes.
Example 18
The difference between this embodiment and embodiment 10 is that in step A3, a U-shaped tooth groove is formed along the circumferential direction of the diamond coating 1b, and the included angle between the U-shaped tooth groove and the radial direction of the substrate 1a is 10 °.
Example 19
The difference between this embodiment and embodiment 10 is that in step A3, a U-shaped tooth groove is formed along the circumferential direction of the diamond coating 1b, and the included angle between the U-shaped tooth groove and the radial direction of the substrate 1a is 30 °.
Dicing blade performance tests were performed on the dicing blades produced in example 10 and examples 16 to 19; the test items and test results are recorded in table 4.
Table 4 summary of the test results for the dicing blade performance of example 10 and examples 16 to 19
Referring to table 4, the dicing blade provided in example 17 had better cutting quality than the dicing blade provided in example 10 and examples 16 to 19. Thus, example 17 is a preferred example among examples 10 and examples 16 to 19.
Comparative example 1
The present embodiment differs from example 17 in that step A3 is omitted and the diamond coating 1b deposited in step A2 is subjected to a micro-tooth processing.
Dicing blade performance tests were performed on the dicing blades produced in example 17 and comparative example 1; the test items and test results are recorded in table 5.
TABLE 5 Table 17 and comparative example 1 Table showing the results of the dicing blade performance test
Referring to table 5, the dicing blade provided in comparative example 1 has no data on the upper and lower kerf, and the reason is that the diamond coating 1b deposited on the dicing blade provided in comparative example 1 is not micro-toothed, i.e. the tooth grooves 2 are not opened on the diamond coating 1b, and therefore the diamond deposited on the dicing blade provided in comparative example 1 is not naturally exposed, and thus, cutting of the hard material wafer cannot be achieved. By way of illustration, the dicing blade provided in example 17 was better in cutting quality.
Examples 20 to 38
The following are specific embodiments 20 to 38 of the present application, and embodiments 20 to 38 respectively provide another dicing blade, including a blade body 1, and a tooth slot 2 is formed at the edge of the blade body 1; wherein the blade body 1 comprises a substrate 1a and a diamond coating 1b deposited on the substrate 1 a.
Specifically, in the dicing blade provided in examples 20 to 38, based on example 20, referring to fig. 13, example 20 provides another dicing blade, referring to fig. 14, tooth grooves 2 are circumferentially opened on the edge of the base 1a along the edge of the base 1a, and an enlarged view referring to fig. 15, diamond coating 1b is deposited on the edge of the base 1a along the edge of the base 1a where the tooth grooves 2 are opened, and the manufacturing method of the dicing blade includes the steps of:
example 20
B1, ultra-thin molybdenum is selected as a base material, a U-shaped tooth groove is formed along the circumferential direction of the edge of the base 1a, and an included angle between the U-shaped tooth groove and the radial direction of the base 1a is 0 degree as shown in FIG. 16; wherein, the thickness of the ultrathin molybdenum is 0.08mm;
b2, adopting absolute ethyl alcohol to carry out first cleaning on the substrate 1a treated in the step B1; ultrasonic processing is carried out on the surface of the substrate 1a after the first cleaning by adopting diamond powder suspension, and diamond seed crystals are preset; sequentially adopting absolute ethyl alcohol and deionized water to carry out second cleaning and drying on the substrate 1 a; in the diamond powder suspension, the diamond powder has single granularity of 10 mu m, and the solvent adopts absolute ethyl alcohol;
b3, depositing a diamond coating 1B on the edge of the substrate 1a treated in the step B2 by adopting a chemical vapor deposition method to prepare a dicing blade; wherein, the chemical vapor deposition method is a direct current arc spraying chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 900 c,
cavity pressure: the pressure of the air is 3.2kPa,
deposition time: the time period of the reaction is 1.5 hours,
hydrogen flow rate: 3.8 the number of the SLMs,
argon flow rate: 7.6 the number of the SLMs,
methane flow rate: ch4/h2=2.8%.
Example 21
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin tungsten is selected as the base material; wherein, the thickness of the ultrathin tungsten is 0.1mm;
in the step B3, the chemical vapor deposition method is a direct current arc spraying chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 900 c,
cavity pressure: 4.3kPa of the total pressure of the ink,
deposition time: the time period of the reaction is 2 hours,
hydrogen flow rate: 4.1 the number of the SLMs,
argon flow rate: 8.3 the number of the SLMs,
methane flow rate: ch4/h2=2.7%.
Example 22
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin titanium is selected as the base material; wherein, the thickness of the ultrathin titanium is 0.1mm;
in the step B3, the chemical vapor deposition method is a direct current arc spraying chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 920 c,
cavity pressure: 2.8kPa of the total pressure of the catalyst,
deposition time: the time period of the reaction is 2.5 hours,
hydrogen flow rate: 2.5 the number of the SLMs,
argon flow rate: the number of 9 SLMs is chosen,
methane flow rate: ch4/h2=4%.
Example 23
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin molybdenum is selected as the base material; wherein, the thickness of the ultrathin molybdenum is 0.1mm;
in the step B3, the chemical vapor deposition method is a microwave plasma chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 860 c,
cavity pressure: the pressure of the air is 6.3kPa,
deposition time: the time period of the reaction is 7.5 hours,
hydrogen flow rate: 420sccm of the total length of the glass,
methane flow rate: ch4/h2=1.8%.
Example 24
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin molybdenum is selected as the base material; wherein, the thickness of the ultrathin molybdenum is 1mm;
in the step B3, the chemical vapor deposition method is a microwave plasma chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 860 c,
cavity pressure: 5.4kPa of the total pressure of the catalyst,
deposition time: the time period of the reaction is 8.5 hours,
hydrogen flow rate: 360sccm of the total length of the glass,
methane flow rate: ch4/h2=3.5%.
Example 25
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin titanium is selected as the base material; wherein, the thickness of the ultrathin titanium is 1mm;
in the step B3, the chemical vapor deposition method is a microwave plasma chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 900 c,
cavity pressure: the pressure of the air is 3.2kPa,
deposition time: the time period of the reaction is 8.5 hours,
hydrogen flow rate: 490sccm of the total length of the glass,
methane flow rate: ch4/h2=3%.
Example 26
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin tungsten is selected as the base material; wherein, the thickness of the ultrathin tungsten is 1mm;
in the step B3, the chemical vapor deposition method is a hot filament chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 890 c,
cavity pressure: 3.1kPa of the total pressure of the air,
deposition time: the time period of the reaction is 6.5 hours,
hydrogen flow rate: 310sccm of the total length of the glass,
methane flow rate: ch4/h2=2%.
Example 27
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin molybdenum is selected as the base material; wherein, the thickness of the ultrathin molybdenum is 0.09mm;
in the step B3, the chemical vapor deposition method is a hot filament chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 910 c,
cavity pressure: the pressure of the air is 6.5kPa,
deposition time: the time period of the reaction is 6.5 hours,
hydrogen flow rate: 430sccm of the total length of the glass,
methane flow rate: ch4/h2=3.4%.
Example 28
The difference between this embodiment and embodiment 20 is that in step B1, ultra-thin molybdenum is selected as the base material; wherein, the thickness of the ultrathin molybdenum is 0.5mm;
in the step B3, the chemical vapor deposition method is a hot filament chemical vapor deposition method, and the deposition parameters are as follows:
deposition temperature: 890 c,
cavity pressure: the pressure of the air is 7.8kPa,
deposition time: the time period of the reaction is 9.5 hours,
hydrogen flow rate: 490sccm of the total length of the glass,
methane flow rate: ch4/h2=4%.
Bond strength test performance test was performed on diamond coating layers 1b deposited on dicing knives prepared in examples 20 to 28: in the dicing blade provided in examples 20 to 28, the bonding force between the diamond coating 1b and the substrate 1a was measured by the indentation method, and the coating indentation strength of the diamond coating 1b was recorded; the detection values are recorded in table 6.
Table 6 summary of results of binding strength measurements for examples 20 to 28
| Coating indentation strength/N | |
| Example 20 | ﹥1500 |
| Example 21 | ﹥1490 |
| Example 22 | ﹥1480 |
| Example 23 | ﹥1470 |
| Example 24 | ﹥1420 |
| Example 25 | ﹥1470 |
| Example 26 | ﹥1450 |
| Example 27 | ﹥1480 |
| Example 28 | ﹥1490 |
Referring to Table 6, the coating indentation strengths of the dicing knives provided in examples 20 to 28 were all above 1420N. Therefore, the dicing blade provided in examples 21 to 29 can meet the cutting requirements of the dicing blade. Meanwhile, example 20 provides a dicing blade having the greatest coating indentation strength. Thus, embodiment 20 is a preferred embodiment among embodiments 20 to 28.
Example 29
This example differs from example 20 in that it further includes a step B4 of performing a polishing finishing treatment on the diamond coating 1B deposited in step B3.
The dicing knives prepared in example 20 and example 29 were subjected to electron microscopic examination to examine the grain density and grain distribution of the surface of the diamond coating 1b deposited on the dicing knives.
An electron micrograph of the diamond coating 1b deposited on the dicing blade according to example 20 is shown in fig. 17, and an electron micrograph of the diamond coating 1b deposited on the dicing blade according to example 29 is shown in fig. 18.
According to the result of electron microscopy, the diamond coating 1b deposited on the dicing blade provided in example 20 and the diamond coating 1b deposited on the dicing blade provided in example 29 have no obvious defect points, and compared with the diamond coating 1b deposited on the dicing blade provided in example 29, the grain distribution on the surface of the diamond coating 1b is more uniform, and the grain size uniformity is relatively better.
Dicing blade performance tests were performed on the dicing blades produced in example 20 and example 29; the detection items and the detection results are recorded in table 7.
Table 7 summary of the test results for the performance of the dicing saw of example 20 and example 29
Referring to table 7, the dicing blade provided in example 29 had a thickness of 8 μm, and the dicing blade provided in example 29 was thinner and better in cutting quality than the dicing blade provided in example 20. By this explanation, dressing the diamond coating 1b deposited on the dicing blade can effectively improve the cutting quality of the dicing blade. Thus, embodiment 29 is a preferred embodiment of embodiments 20 and 29.
Example 30
The difference between this example and example 29 is that in step B2, the diamond powder is mixed in particle size, the mass fraction of diamond powder with particle size of 30 μm is 50%, the mass fraction of diamond powder with particle size of 50 μm is 50%, and absolute ethanol is used as the solvent.
Example 31
The difference between this example and example 29 is that in step B2, the diamond powder is mixed particle size, the mass fraction of diamond powder with particle size of 10 μm is 30%, the mass fraction of diamond powder with particle size of 30 μm is 70% and the particle size range is 10-30 μm, and absolute ethanol is used as solvent.
Example 32
The difference between this example and example 29 is that in step B2, the diamond powder is mixed in particle size, the mass fraction of diamond powder having a particle size of 1 μm is 80%, the mass fraction of diamond powder having a particle size of 10 μm is 20%, and absolute ethanol is used as the solvent.
Example 33
The difference between this example and example 29 is that in step B2, the diamond powder is in a single particle size, the particle size is 10 μm, and absolute ethanol is used as the solvent.
Example 34
The difference between this example and example 29 is that in step B2, the diamond powder is in a single particle size, 1 μm in size, and absolute ethanol is used as the solvent.
Dicing blade performance tests were performed on the dicing blades produced in example 29 and examples 30 to 34; the test items and test results are recorded in table 8.
Table 8 summary of the test results for the performance of the dicing saw of example 29 and examples 30 to 34
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Referring to table 8, example 29 provides a dicing blade having better cutting quality than the dicing blades of examples 30 to 34. Thus, example 29 is a preferred example among examples 29 and examples 30 to 34.
Example 35
Referring to fig. 19, the difference between this embodiment and embodiment 29 is that in step B1, a stepped tooth slot is formed along the periphery of the edge of the base 1a, and referring to fig. 20, the included angle between the stepped tooth slot and the radius of the base 1a is 0 °, so as to manufacture the dicing blade.
Example 36
Referring to fig. 21, the difference between this embodiment and embodiment 29 is that in step B1, a U-shaped tooth slot is formed along the circumferential direction of the edge of the base 1a, and referring to fig. 22, the included angle between the U-shaped tooth slot and the radial direction of the base 1a is 20 °, so as to obtain the dicing blade.
Example 37
The difference between this embodiment and embodiment 29 is that in step B1, a U-shaped tooth slot is formed along the circumferential direction of the edge of the base 1a, and the included angle between the U-shaped tooth slot and the radial direction of the base 1a is 15 °, so as to manufacture the dicing blade.
Example 38
The difference between this embodiment and embodiment 29 is that in step B1, a U-shaped tooth slot is formed along the circumferential direction of the edge of the base 1a, and the included angle between the U-shaped tooth slot and the radial direction of the base 1a is 30 °, so as to manufacture the dicing blade.
Dicing blade performance tests were performed on the dicing blades produced in example 29 and examples 35 to 38; the detection items and the detection results are recorded in table 9.
Table 9 summary of the test results for the performance of the dicing saw of example 29 and examples 35 to 38
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Referring to table 9, example 36 provides a dicing blade having better cutting quality than example 29 and examples 35 to 38. Thus, example 36 is a preferred example among examples 29 and examples 35 to 38.
Comparative example 2
The difference between this embodiment and embodiment 36 is that step B1 is omitted and a U-shaped tooth slot is formed along the periphery of the edge of the base 1 a.
Dicing blade performance tests were performed on the dicing blades prepared in example 36 and comparative example 2; the detection items and the detection results are recorded in table 10.
Table 10 summary of the test results for the dicing blade performance of example 36 and comparative example 2
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Referring to table 10, the dicing blade of comparative example 2 has no data on the upper and lower chipping, and the reason is that the dicing blade of comparative example 2 has no tooth slot 2 at the edge of the upper substrate 1a, resulting in the diamond coating 1b deposited on the dicing blade of comparative example 2 being a continuous circumferential structure, and the diamond is not naturally exposed, so that cutting of the hard material wafer cannot be achieved. By way of illustration, example 36 provides a dicing blade with better cutting quality.
In summary, the dicing blade according to embodiments 17 and 36 of the present application is the most preferable, and can be effectively applied in practice.
Therefore, the diamond film base deposited on the dicing blade has strong adhesive force, and the cutting performance of the dicing blade can be comprehensively improved.
The above embodiments are not intended to limit the scope of the present application, so: all equivalent changes in structure, shape and principle of the application should be covered in the scope of protection of the application.
Claims (5)
1. The preparation method of the dicing blade is characterized by comprising the following steps of:
a1, cleaning a substrate for the first time; presetting diamond seed crystals on the surface of the substrate after the first cleaning by adopting diamond powder suspension; cleaning the substrate for the second time and drying;
a2, circumferentially depositing a diamond coating on one side of the edge of the substrate treated in the step A1 by adopting a chemical vapor deposition method;
a3, carrying out micro-tooth processing treatment on the diamond coating deposited in the step A2, and forming tooth grooves along the circumferential direction of the diamond coating to prepare a dicing blade;
and a step Aa is further included between the step A2 and the step A3, wherein the other side of the edge of the substrate, on which the diamond coating is not deposited, is processed, and part of the substrate material is removed so that the diamond coating is partially attached to one side of the edge of the substrate.
2. The method of manufacturing a dicing blade according to claim 1, wherein the tooth shape of the tooth slot is any one of a U-shape and a trapezoid.
3. The method for manufacturing a dicing blade according to claim 2, wherein an included angle between a tooth form of the tooth slot and a radial direction of the base body is 0 to 30 °.
4. The method of manufacturing a dicing blade according to claim 1, wherein the material of the base is selected from any one of tungsten, molybdenum, titanium, silicon nitride, and silicon carbide.
5. A dicing blade produced by the production method according to any one of claims 1 to 4.
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| KR200280586Y1 (en) * | 2002-03-28 | 2002-07-04 | 주식회사 코디스 | Dicing blade for cutting semiconductor wafer chip |
| JP2009066715A (en) * | 2007-09-14 | 2009-04-02 | Mitsubishi Heavy Ind Ltd | Cutting tool |
| KR20110053057A (en) * | 2009-11-13 | 2011-05-19 | 강성찬 | Cutting wheel for glass and manufacturing method for cutting wheel |
| JP3181107U (en) * | 2012-11-08 | 2013-01-24 | スキルマン株式会社 | Circular saw blade for foam cutting |
| JP2016106046A (en) * | 2015-12-28 | 2016-06-16 | 三星ダイヤモンド工業株式会社 | Producing method of scribing wheel |
| CN105483640A (en) * | 2016-01-04 | 2016-04-13 | 上海应用技术学院 | Pre-treatment method for chemical vapor deposition diamond coating substrate |
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