CN116367492A - Power module and frequency converter - Google Patents

Abstract

The application relates to a power module and a frequency converter, wherein the power module comprises a frame and a power module arranged on the frame. The power module also includes a heat exchanger disposed on the frame, the heat exchanger having a first side and a second side disposed opposite in a first direction. The power module comprises a diode unit and an IGBT unit, wherein the diode unit is arranged on the first side of the heat exchanger, and the IGBT unit is arranged on the second side of the heat exchanger. Wherein the heat exchanger is configured for heat exchanging the diode unit and the IGBT unit by means of a cooling liquid. According to the power module, the diode unit and the IGBT unit are respectively arranged on the first side and the second side of the heat exchanger, and heat exchange can be carried out on the diode unit and the IGBT unit by means of the heat exchanger, so that heat exchange efficiency is improved. Moreover, the heat exchanger performs heat exchange by means of the cooling liquid, so that the heat exchange efficiency can be further improved with smaller volume, and the protection level is improved.

Description

Power module and inverter

technical field

The application relates to the technical field of frequency converters, in particular to power modules and frequency converters.

Background technique

The frequency converter is a power control device that uses frequency conversion technology and microelectronics technology to control the AC motor by changing the frequency of the motor's working power supply. Most inverters in the related art dissipate heat through air cooling. However, as the power level of the inverter continues to increase, the heat transfer efficiency of the air cooling method is low, and it is difficult to meet the needs of actual working conditions.

Contents of the invention

Based on this, a power module and a frequency converter capable of improving heat exchange efficiency are provided to adapt to a frequency converter with a higher capacity and meet the heat dissipation requirements of the frequency converter.

In one aspect of the present application, a power module is provided, including a frame and a power module installed on the frame;

The power module further includes a heat exchanger disposed on the frame, the heat exchanger has a first side and a second side oppositely disposed along a first direction;

The power module includes a diode unit and an IGBT unit;

a diode unit disposed on the first side of the heat exchanger; and

an IGBT unit disposed on the second side of the heat exchanger;

Wherein, the heat exchanger is configured to exchange heat between the diode unit and the IGBT unit by means of a cooling liquid.

In one of the embodiments, the IGBT unit is configured as a patch structure.

In one of the embodiments, the diode unit is configured as a patch structure.

In one of the embodiments, the power module further includes a supporting capacitor;

The frame has an accommodating space, and the supporting capacitor is installed on the frame and located in the accommodating space.

In one of the embodiments, the supporting capacitor has a body part and a connection part;

The connecting portion is arranged on the body portion along the second direction to be connected with the frame;

The second direction is perpendicular to the first direction.

In one of the embodiments, the power module further includes a capacitor busbar; the capacitor busbar is electrically connected to the supporting capacitor;

Wherein, a plane perpendicular to the second direction is defined as a reference plane, and the positive row and the negative row of the capacitor busbar are arranged symmetrically around the reference plane;

The second direction is perpendicular to the first direction.

In one of the embodiments, the power module further includes a DC connection bar;

The DC connection is drain-connected between the diode unit and the capacitor busbar.

In one of the embodiments, the power module further includes a DC connection bar;

The DC connection is drain-connected between the IGBT unit and the capacitor busbar.

In one of the embodiments, the power module further includes a casing;

The casing is disposed outside the power module along the first direction and connected to the frame.

In another aspect of the present application, a frequency converter is provided, including the power module mentioned above.

The above-mentioned power module and frequency converter, the power module at least includes a frame, a power module and a heat exchanger. By arranging the diode unit and the IGBT unit in the power module on the first side and the second side of the heat exchanger, heat exchange can be performed on the diode unit and the IGBT unit at the same time by means of the heat exchanger, thereby improving heat exchange efficiency. Moreover, the heat exchanger performs heat exchange by means of the cooling liquid, which can further improve the heat exchange efficiency with a smaller volume and improve the protection level.

Description of drawings

FIG. 1 is a structural schematic diagram of a viewing angle of a power module according to an embodiment of the present application;

FIG. 2 is a schematic structural diagram of a power module according to an embodiment of the present application;

FIG. 3 is a structural schematic diagram of another viewing angle of a power module according to an embodiment of the present application.

Explanation of reference signs:

100. Power module; 110. Frame; 111. Upper beam body; 120. Power module; 121. Diode unit; 122. IGBT unit; 130. Heat exchanger; 131. First side; 132. Second side; 140 , supporting capacitor; 141, terminal; 150, capacitor bus bar; 160, DC connection bar; 165, unit output bar; 170, shell; 180, drive module; 190, output copper bar; x, first direction; z , the second direction.

Detailed ways

In order to make the above-mentioned purpose, features and advantages of the present application more obvious and understandable, the specific implementation manners of the present application will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the application. However, the present application can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise", "Axial" , "radial", "circumferential" and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the application and simplifying the description, rather than indicating or implying the referred device or Elements must have certain orientations, be constructed and operate in certain orientations, and thus should not be construed as limiting the application.

In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present application, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.

In this application, terms such as "installation", "connection", "connection" and "fixation" should be interpreted in a broad sense, for example, it can be a fixed connection or a detachable connection, unless otherwise clearly specified and limited. , or integrated; it may be mechanically connected or electrically connected; it may be directly connected or indirectly connected through an intermediary, and it may be the internal communication of two components or the interaction relationship between two components, unless otherwise specified limit. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application according to specific situations.

In the present application, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may mean that the first and second features are in direct contact, or that the first and second features are indirect through an intermediary. touch. Moreover, "above", "above" and "above" the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "beneath" and "beneath" the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.

It should be noted that when an element is referred to as being “fixed on” or “disposed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. As used herein, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions are for the purpose of illustration only and are not intended to represent the only embodiments.

In addition, the drawings are not drawn in a 1:1 scale, and the relative sizes of the elements are drawn in the drawings by way of example only and not necessarily in true scale.

In order to facilitate the understanding of the technical solution of the present application, before the detailed description, the power module and the frequency converter in the related art are firstly described.

Inverter (Variable-frequency Drive, VFD) is a power control device that uses frequency conversion technology and microelectronics technology to control AC motors by changing the frequency of the motor's operating power supply. Medium and high voltage power units are used in electric power, metallurgy, water supply, petroleum, chemical industry, coal and other fields that require energy saving and improved production processes. Since the 1980s, frequency converter technology has gradually been widely used as an energy-saving technology in major industrialized countries. In China, since the late 1990s, high-voltage frequency converters have been used in a few industries such as electric power and metallurgy. At present, high-voltage frequency converter speed control has become the mainstream speed control method for high-voltage AC motors. High-voltage frequency conversion systems are used in new projects and technical transformation projects. The energy-saving effect of all is very obvious, and its power, reliability, efficiency, cost and many other aspects have made great progress.

As the power of power electronic devices continues to increase, the capacity of frequency converters continues to increase, and the design of its cooling system has become a key issue. The quality of the cooling system design of the inverter directly affects whether the inverter can work safely and stably for a long time. Most of the heat generated by the inverter comes from the power device. The power device itself is sensitive to temperature, and the change of temperature will affect the switching of the device. For example, as the power dissipation of the IGBT increases, if the heat dissipation system is insufficient, the temperature of the chip may reach or even exceed the junction temperature, which will cause the IGBT to fail.

Among them, IGBT (Insulated Gate Bipolar Transistor), that is, an insulated gate bipolar transistor, is a compound semiconductor device composed of a MOSFET (Insulated Gate Field Effect Transistor) and a BJT (Bipolar Transistor). As the core of the inverter's main circuit, the selection of power switching devices is particularly important. Because IGBT has the advantages of high input impedance, fast working speed, on-state voltage drop, strong current carrying capacity, and easy driving, it has been widely used and is an ideal fully-controlled device. The turn-on and turn-off of the IGBT is controlled by the gate voltage. When a positive voltage is applied to the gate, a channel is formed in the MOSFET and a base current is provided to the PNP transistor, thereby turning on the IGBT. At this time, the holes (minority carriers) injected from the N ⁺ region to the N ^- region modulate the conductance of the N ^- region, reducing the resistance of the N region, so that the IGBT with a high blocking voltage also has a low on-state voltage drop. When a negative voltage is applied to the gate, the channel in the MOSFET disappears, the base current of the PNP transistor is cut off, and the IGBT is turned off.

The heat dissipation method in the related art mostly adopts air cooling to dissipate heat. With the integration of power modules and the continuous improvement of power levels, traditional air-cooled heat dissipation has faced the dilemma that it is difficult to quickly dissipate a large amount of heat in a short period of time in a limited space. Moreover, the fans required by high-power devices are relatively large in size, which will lead to increased noise, increased dust, and increased wind pressure, which will reduce the stability of the system. Therefore, the traditional forced air cooling has gradually been difficult to meet the heat dissipation requirements of high-power IGBT modules. The capacity of the air-cooled frequency converter in the related art is generally less than 17 MW, and it is difficult to meet the working condition of the capacity of the frequency converter above 17 MW.

The inventors found that due to the large specific heat capacity of water and the relatively small volume and noise of the water-cooled radiator, the thermal conductivity of water is much higher than that of wind. Therefore, it is necessary to propose a power module and a frequency converter that can improve the cooling effect by using water cooling.

For ease of description, the drawings only show structures related to the embodiments of the present application.

FIG. 1 shows a schematic structural diagram of a viewing angle of a power module 100 in an embodiment of the present application;

FIG. 2 shows a schematic structural diagram of a power module 120 in an embodiment of the present application.

Referring to FIG. 1 and referring to FIG. 2 , a power module 100 provided by an embodiment of the present application includes a frame 110 and a power module 120 installed on the frame 110 . The power module 100 further includes a heat exchanger 130 disposed on the frame 110 , and the heat exchanger 130 has a first side 131 and a second side 132 oppositely disposed along the first direction x. The power module 120 includes a diode unit 121 and an IGBT unit 122 , the diode unit 121 is disposed on the first side 131 of the heat exchanger 130 , and the IGBT unit 122 is disposed on the second side 132 of the heat exchanger 130 . Wherein, the heat exchanger 130 is configured to exchange heat between the diode unit 121 and the IGBT unit 122 by means of a cooling liquid.

The above-mentioned power module 100 can simultaneously replace the diode unit 121 and the IGBT unit 122 by means of the heat exchanger 130 by setting the diode unit 121 and the IGBT unit 122 in the power module 120 on the first side 131 and the second side 132 of the heat exchanger 130, respectively. The IGBT unit 122 performs heat exchange, thereby improving heat exchange efficiency. Moreover, the heat exchanger 130 performs heat exchange by means of the cooling liquid, which can further improve the heat exchange efficiency with a smaller volume and improve the protection level.

It should be noted that the IGBT unit 122 is combined into an inverter circuit, and the diode unit 121 is combined into a rectifier circuit. The rectification and inverter electrical structure formed in this way not only optimizes the volume, improves the heat dissipation efficiency, but also reduces the cost. In the embodiment of the present application, the power module 120 is composed of two IGBT units 122 and three diode units 121 . Exemplarily, the heat exchanger 130 is a water-cooled radiator.

As shown in FIG. 2 , in some embodiments, the IGBT unit 122 is configured as a patch structure. The patch structure is a power semiconductor device structure in the form of a patch package. The IGBT unit 122 of the patch type structure is installed on the side surface of the heat exchanger 130 by sticking, and the IGBT unit 122 is in close contact with the side surface of the heat exchanger 130 . It can be understood that the body of the IGBT unit 122 is kept in contact with the side surface of the heat exchanger 130 , and there is no gap or distance from the side surface of the heat exchanger 130 , which greatly improves the heat exchange efficiency. At the same time, devices that are packaged in the SMD type generally have a smaller volume, thereby further reducing the volume of the power module 120 . Exemplarily, the IGBT unit 122 is fixed on the second side 132 of the heat exchanger 130 by a bolt assembly.

As shown in FIG. 2 , in some embodiments, the diode unit 121 is configured as a patch structure. The patch structure is a power semiconductor device structure in the form of a patch package. The diode unit 121 of the patch type structure is installed on the side surface of the heat exchanger 130 by sticking, and the diode unit 121 is in close contact with the side surface of the heat exchanger 130 . It can be understood that the body of the diode unit 121 is kept in contact with the side surface of the heat exchanger 130, and there is no gap or distance between the body and the side surface of the heat exchanger 130, which greatly improves the heat exchange efficiency. At the same time, devices that are packaged in the SMD type generally have a smaller volume, thereby further reducing the volume of the power module 120 . Exemplarily, the diode unit 121 is fixed on the first side 131 of the heat exchanger 130 by a bolt assembly.

FIG. 3 shows a structural schematic diagram of another viewing angle of the power module 100 in an embodiment of the present application.

As shown in FIG. 1 and FIG. 3 , in some embodiments, the power module 100 further includes a support capacitor 140 . The frame 110 has an accommodating space, and the supporting capacitor 140 is installed on the frame 110 and located in the accommodating space. In this way, fixing the support capacitor 140 in the accommodating space of the frame 110 not only makes the installation more reliable, but also makes reasonable use of the space of the frame 110, making the entire power module 100 more compact and the layout of components more reasonable. Specifically, in some implementations, the supporting capacitor 140 has a body portion and a connection portion, and the connection portion is disposed on the body portion along the second direction z so as to be connected to the frame 110 . The second direction z is perpendicular to the first direction x. In this way, through the connecting portion disposed on the main body along the second direction z, it can be more reliably fixed to the frame 110 without causing damage to the main body of the supporting capacitor 140 . Specifically, there are two connecting parts, and the two connecting parts are respectively arranged at two ends of the main body at intervals along the second direction z. In this way, the supporting capacitor 140 can be respectively fixed in the second direction z by means of the two connecting parts, which further ensures the reliability of the fixing. Exemplarily, the connection part is fixed on the frame 110 by means of a bolt assembly. Specifically, the plurality of connection parts are respectively fixedly connected with the upper beam body 111 and the lower beam body of the frame 110 .

As shown in FIG. 3 , in some embodiments, the power module 100 further includes a capacitor bus bar 150 , and the capacitor bus bar 150 is electrically connected to the support capacitor 140 . Wherein, a plane perpendicular to the second direction z is defined as a reference plane, and the positive row and the negative row of the capacitor busbar 150 are arranged symmetrically around the reference plane. The second direction z is perpendicular to the first direction x. Understandably, the positive row and the negative row of the capacitor busbar 150 are arranged one positive and one negative. In this way, while ensuring the electrical safety distance, the structural layout of the positive row and the negative row of the capacitor busbar 150 can be made more compact and reasonable, thereby further reducing the volume of the power module 100 . Specifically, a terminal post 141 protrudes from the support capacitor 140 , and the positive row and the negative row of the capacitor busbar 150 are installed on the terminal post 141 respectively.

For the IGBT unit 122 dynamic parameter test platform, the stray inductance of the commutation circuit during the device switching transient process, usually referred to as the test platform stray inductance, is an important factor affecting the device parameters. Different stray inductances have an important impact on the turn-on and turn-off characteristics of the IGBT unit 122 . Under the same working conditions, the increase of the stray inductance of the loop will slow down the turn-on speed of the IGBT unit 122, reduce the rising rate of the collected current, significantly reduce the turn-on transient current peak, and reduce the uneven flow. As shown in FIG. 3 , in some embodiments, the power module 120 further includes a DC connection bar 160 electrically connected between the IGBT unit 122 and the capacitor bus bar 150 . In this way, by stacking the DC connection bars 160 up and down, the current flows in opposite overlapping directions, which can ensure that the stray inductance meets the requirements, and the operating space is more suitable. Specifically, the IGBT unit 122 is electrically connected to the capacitor bus bar 150 through a set of positive and negative DC connection bars 160 . In some embodiments, the power module 120 further includes a DC connection bar 160 , and the DC connection bar 160 is electrically connected between the diode unit 121 and the capacitor bus bar 150 . In this way, it can further ensure that the stray inductance meets the requirements. Specifically, the diode unit 121 is electrically connected to the capacitor bus bar 150 through a set of positive and negative DC connection bars 160 .

It should be noted that the DC connection bar 160 is used for internal connection of the power module 120 . The power module 100 also includes an AC connection bar and a unit output bar 165, which are used for connecting and conducting with external devices. Specifically, after the IGBT unit 122 and the diode unit 121 are installed on the heat exchanger 130 , the DC connection row 160 , the AC connection row and the unit output row 165 are installed. In this way, the current-carrying load can be satisfied, and the stray inductance is small. In addition, the insulation effect is more reliable, and the cost is relatively low. Further, the power module 100 also includes an output copper bar 190 , and the output copper bar 190 is connected and conducted with the unit output bar 165 .

Please refer to FIG. 1 again. In some embodiments, the power module 100 further includes a casing 170 . The casing 170 is disposed outside the power module 120 along the first direction x and connected to the frame 110 . In this way, the power module 120 can be protected by means of the casing 170, and the power module 120 can be accommodated in the space between the casing 170 and the frame 110, so that the power module 100 can be modularized, which not only makes reasonable use of space, reduces Reduced size, and easy to maintain and repair. Further, a heat exchanger 130 is accommodated between the casing 170 and the frame 110 . In this way, while ensuring that the heat exchanger 130 can reliably dissipate heat from the IGBT unit 122 and the diode unit 121 , the space in the casing 170 can be rationally utilized, further reducing the volume of the power module 100 .

The driving module 180 is an interface between the controller and the power device, and has the functions of providing isolation, reliable driving capability and protection. The drive module 180 with excellent performance can not only allow the IGBT unit 122 to quickly switch between the cut-off region and the saturation region, improve the efficiency of the power electronic conversion system, but also allow the IGBT unit 122 to exit the fault state in time when the IGBT unit 122 fails, reducing the damage to the IGBT unit 122, thereby prolonging the service life of the IGBT unit 122. As shown in FIG. 3 , in some embodiments, the power module 100 further includes a driving module 180 configured to drive the IGBT unit 122 to turn on and off. Specifically, the driving module 180 is installed on the frame 110 by means of a bolt assembly. It should be noted that the modules and units in the power module 100 are connected through copper bars.

Based on the same inventive concept, another aspect of the present application further provides a frequency converter, including the above-mentioned power module 100 . The frequency converter mainly improves the flexibility of the AC motor power supply, that is, if its frequency and amplitude can be changed, the period of its moving magnetic field will also change accordingly, thereby realizing smooth control of the motor speed. The inverter mainly includes a rectifier circuit, an intermediate link circuit, an inverter circuit, a control circuit and a protection circuit. Among them, the IGBT unit 122 is the core component of the frequency converter, and its main function is to convert DC into AC for use by the load. The power module 100 provided in the embodiment of the present application uses the heat exchanger 130 to dissipate heat from the IGBT unit 122 and the diode unit 121 at the same time, so that the heat dissipation efficiency of the power module 100 is greatly improved, and the above-mentioned power module 100 is used The heat dissipation efficiency of the frequency converter has also been improved to meet the heat dissipation requirements of the frequency converter.

1 to 3 , the power module 100 and the frequency converter provided by the embodiment of the present application, the power module 100 installs the diode unit 121 and the IGBT unit 122 in the power module 120 respectively in the second position of the heat exchanger 130 The one side 131 and the second side 132 can simultaneously perform heat exchange on the diode unit 121 and the IGBT unit 122 by means of the heat exchanger 130 , thereby improving heat exchange efficiency, higher power density, and reasonable circuit distribution. Moreover, the heat exchanger 130 performs heat exchange by means of the cooling liquid, which can further improve the heat exchange efficiency with a smaller volume and improve the protection level. It should be noted that the IGBT unit 122 is combined into an inverter circuit, and the diode unit 121 is combined into a rectifier circuit. The rectification and inverter electrical structure formed in this way not only optimizes the volume, improves the heat dissipation efficiency, but also reduces the cost.

The IGBT unit 122 and the diode unit 121 of the chip structure keep in contact with the side surface of the heat exchanger 130, and there is no gap or distance between them and the side surface of the heat exchanger 130, which greatly improves the heat exchange efficiency. At the same time, devices that are packaged in the SMD type generally have a smaller volume, thereby further reducing the volume of the power module 120 . The connecting portion of the supporting capacitor 140 can be more reliably fixed to the frame 110 without causing damage to the main body of the supporting capacitor 140 . The positive row and the negative row of the capacitor bus 150 are arranged one positive and one down, which can make the structural layout of the positive row and the negative row of the capacitor bus 150 more compact and reasonable while ensuring the electrical safety distance, thereby further reducing the The volume of the low power module 100. The IGBT unit 122 is electrically connected to the capacitor bus bar 150 through a set of positive and negative DC connection bars 160, and the diode unit 121 is electrically connected to the capacitor bus bar 150 through another set of positive and negative DC connection bars 160. The inductance meets the requirements, and the operating space is more suitable. The casing 170 disposed outside the power module 120 along the first direction x can provide protection for the power module 120 .

Through the space between the housing 170 and the frame 110 and the accommodating space of the frame 110 itself, the installation of the power module 120 and the heat exchanger 130 and other module devices can be planned and arranged, so that the power module 100 is modularized, and each The modules can be installed, disassembled and maintained independently, which is not only more beautiful, but also makes reasonable use of space, reduces volume, and is easy to maintain and overhaul. The heat dissipation efficiency of the frequency converter using the above-mentioned power module 100 is also improved, which meets the heat dissipation requirements of the frequency converter.

The various technical features of the above-mentioned embodiments can be combined arbitrarily. To make the description concise, all possible combinations of the various technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, should be considered as within the scope of this specification.

The above-mentioned embodiments only express several implementation modes of the present application, and the description thereof is relatively specific and detailed, but should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make several modifications and improvements without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the scope of protection of the patent application should be based on the appended claims.

Claims (10)

1. The power module is characterized by comprising a frame and a power module arranged on the frame;

the power module further includes a heat exchanger disposed on the frame, the heat exchanger having a first side and a second side disposed opposite in a first direction;

the power module comprises a diode unit and an IGBT unit;

a diode unit provided at the first side of the heat exchanger; and

an IGBT unit provided on the second side of the heat exchanger;

wherein the heat exchanger is configured for heat exchanging the diode unit and the IGBT unit by means of a cooling liquid.

2. The power module of claim 1, wherein the IGBT cells are configured in a patch-type structure.

3. The power module of claim 1, wherein the diode unit is configured as a patch structure.

4. A power module according to any of claims 1-3, further comprising a support capacitor;

the frame is provided with an accommodating space, and the supporting capacitor is arranged on the frame and is positioned in the accommodating space.

5. The power module of claim 4, wherein the support capacitor has a body portion and a connection portion;

the connecting part is arranged on the body part along a second direction so as to be connected with the frame;

the second direction is perpendicular to the first direction.

6. The power module of claim 4, further comprising a capacitor busbar; the capacitor busbar is electrically connected with the supporting capacitor;

defining a plane perpendicular to the second direction as a reference plane, wherein the positive row and the negative row of the capacitor busbar are symmetrically arranged by taking the reference plane as a center;

the second direction is perpendicular to the first direction.

7. The power module of claim 6, further comprising a dc link bank;

the direct current connection row is electrically connected between the diode unit and the capacitor busbar.

8. The power module of claim 6, further comprising a dc link bank;

the direct current connection row is electrically connected between the IGBT unit and the capacitor busbar.

9. A power module according to any one of claims 1-3, further comprising a housing;

the shell is covered outside the power module along the first direction and is connected with the frame.

10. A frequency converter comprising a power module as claimed in any one of claims 1-9.

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