CN116346107A - HBT-based radio frequency switch - Google Patents

HBT-based radio frequency switch Download PDF

Info

Publication number
CN116346107A
CN116346107A CN202310628323.4A CN202310628323A CN116346107A CN 116346107 A CN116346107 A CN 116346107A CN 202310628323 A CN202310628323 A CN 202310628323A CN 116346107 A CN116346107 A CN 116346107A
Authority
CN
China
Prior art keywords
power amplifier
bias
circuit
radio frequency
switching tube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202310628323.4A
Other languages
Chinese (zh)
Other versions
CN116346107B (en
Inventor
蓝亮
汤委龙
陈锦锋
张志浩
章国豪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong University of Technology
Original Assignee
Guangdong University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong University of Technology filed Critical Guangdong University of Technology
Priority to CN202310628323.4A priority Critical patent/CN116346107B/en
Publication of CN116346107A publication Critical patent/CN116346107A/en
Application granted granted Critical
Publication of CN116346107B publication Critical patent/CN116346107B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/10—Auxiliary devices for switching or interrupting
    • H01P1/15—Auxiliary devices for switching or interrupting by semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/401—Circuits for selecting or indicating operating mode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

The application provides a radio frequency switch based on HBT, this radio frequency switch include power amplifier circuit, bias circuit, power amplifier switching tube and bias switching tube, and the amplifier tube that is used as the power amplifier in the power amplifier circuit, power amplifier switching tube and bias switching tube are HBT transistor. The input end of the power amplifier circuit is respectively connected with the input end of the power amplifier switching tube and one output end of the bias circuit, the other output end of the bias circuit is connected with the input end of the bias switching tube, the bias circuit is used for generating bias current and transmitting the bias current to the power amplifier circuit, the bias switching tube is used for controlling the magnitude of the bias current so as to control the working mode of the power amplifier circuit, the power amplifier switching tube is used for controlling the switch of the power amplifier circuit, and the power amplifier circuit is used for amplifying an input radio frequency signal; according to the power amplifier circuit, the bias current transmitted to the power amplifier circuit by the bias circuit is changed by controlling the conducting voltage of the bias switch tube, so that the power amplifier circuit can realize switching of various states, and the power amplifier circuit can be flexibly suitable for various working modes.

Description

HBT-based radio frequency switch
Technical Field
The application relates to the technical field of radio frequency switches, in particular to a radio frequency switch based on an HBT.
Background
With the rapid development and application of wireless communication technology, the performance and reliability requirements of the radio frequency power amplifier are higher and higher. The traditional single-mode radio frequency power amplifier cannot meet the requirements of different communication standards and frequency bands, so that the multimode radio frequency power amplifier is initially applied to a mobile communication system, is an amplifier capable of working in a plurality of frequency band ranges, and can adapt to a plurality of working modes in the communication system.
In the multimode radio frequency power amplifier, the radio frequency switch can select different amplifier stages in different frequency bands, so that multimode signal amplification is realized, the performance and reliability of the power amplifier are determined, wherein the bias current provided by the bias circuit of the radio frequency switch plays a key role in the performance of the power amplifier, however, the bias current provided for the power amplifier main circuit in the traditional bias circuit is not easy to control, and therefore, the conventional radio frequency switch can only realize switching of two states and cannot flexibly adapt to multiple working modes.
Disclosure of Invention
The purpose of the present application is to at least solve one of the above technical drawbacks, and in particular, to a technical drawback that a conventional radio frequency switch in the prior art can only realize switching between two states and cannot flexibly adapt to multiple working modes.
The application provides a radio frequency switch based on an HBT, which comprises a power amplifier circuit, a bias circuit, a power amplifier switching tube and a bias switching tube; the amplifying tube used as the power amplifier, the power amplifier switching tube and the bias switching tube in the power amplifier circuit are HBT transistors;
the input end of the power amplifier circuit is respectively connected with the input end of the power amplifier switching tube and one path of output end of the bias circuit, and the other path of output end of the bias circuit is connected with the input end of the bias switching tube;
the bias circuit is used for generating bias current and transmitting the bias current to the power amplifier circuit;
the bias switch tube is used for controlling the magnitude of the bias current so as to control the working mode of the power amplifier circuit;
the power amplifier switching tube is used for controlling the on and off of the power amplifier circuit;
the power amplifier circuit is used for amplifying an input radio frequency signal.
Optionally, the collector stage of the power amplifier switching tube is connected with the input end of the power amplifier circuit, the base stage of the power amplifier switching tube is used for receiving the first base stage voltage, and the emitter stage of the power amplifier switching tube is grounded.
Optionally, the collector stage of the bias switching tube is connected with the other output end of the bias circuit, the base stage of the bias switching tube is used for receiving the second base stage voltage, and the emitter stage of the bias switching tube is grounded.
Optionally, the power amplifier circuit comprises a matching circuit and an amplifying tube;
the input end of the amplifying tube is respectively connected with the input end of the power amplifying switch tube and one path of output end of the biasing circuit, one path of output end is connected with a power supply, and the other path of output end is connected with the input end of the matching circuit;
the amplifying tube is used for receiving the radio frequency signal and the bias current output by the bias circuit, amplifying the radio frequency signal according to the bias current and transmitting the amplified radio frequency signal to the matching circuit;
the matching circuit is used for filtering the amplified radio frequency signals and outputting the filtered radio frequency signals.
Optionally, the base of the amplifying tube is an input end; the collector stage of the amplifying tube is an output end; the emitter of the amplifying tube is grounded.
Optionally, the power amplifier circuit further comprises a feedback circuit;
and two ends of the feedback circuit are respectively connected with the input end and the output end of the amplifying tube and are used for returning part of signals output by the amplifying tube to the input end of the amplifying tube.
Optionally, the power amplifier circuit further comprises a choke inductance;
the choke inductance is connected between the output end of the amplifying tube and the power supply and is used for blocking the amplified radio frequency signals.
Optionally, the power amplifier circuit further comprises a current limiting resistor;
the current limiting resistor is arranged between the feedback circuit and the input end of the amplifying tube and is used for controlling the signal returned by the feedback circuit.
Optionally, the bias circuit includes a current mirror bias circuit, a voltage dividing resistor, and a temperature compensating resistor;
the input end of the current mirror bias circuit is connected with the reference voltage through the temperature compensation resistor, and the output end of the current mirror bias circuit is connected with the input end of the power amplifier circuit through the voltage dividing resistor.
Optionally, the bias circuit further includes a filter capacitor;
the filter capacitor is connected with the input end of the current mirror bias circuit and used for blocking the radio frequency signal from flowing into the current mirror bias circuit.
From the above technical solutions, the embodiments of the present application have the following advantages:
the application provides a radio frequency switch based on HBT, this radio frequency switch include power amplifier circuit, bias circuit, power amplifier switching tube and bias switching tube, and the amplifier tube that is used as the power amplifier in the power amplifier circuit, power amplifier switching tube and bias switching tube are HBT transistor. In the radio frequency switch, the input end of the power amplifier circuit is respectively connected with the input end of the power amplifier switching tube and one output end of the bias circuit, the other output end of the bias circuit is connected with the input end of the bias switching tube, wherein the bias circuit is used for generating bias current and transmitting the bias current to the power amplifier circuit, the bias switching tube is used for controlling the magnitude of the bias current so as to control the working mode of the power amplifier circuit, the power amplifier switching tube is used for controlling the on and off of the power amplifier circuit, and the power amplifier circuit is used for amplifying the input radio frequency signal. The bias current transmitted to the power amplification circuit by the bias circuit can be changed by controlling the conduction voltage of the bias switching tube, for example, the current flowing into the bias switching tube can be increased by increasing the conduction voltage of the bias switching tube, so that the bias current flowing into the power amplification circuit is smaller, a low energy consumption mode of the power amplification circuit is started, the current flowing into the bias switching tube can be reduced by reducing the conduction voltage of the bias switching tube, the bias current flowing into the power amplification circuit is larger, a high power mode of the power amplification circuit is started, and the power amplification circuit can realize switching of various states by the mode, so that the power amplification circuit can be flexibly adapted to various working modes.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive faculty for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a HBT-based radio frequency switch according to an embodiment of the present application;
FIG. 2 is a graph showing the performance of the power amplifier circuit before and after the RF switch is added into the switching tube according to the embodiment of the present application;
fig. 3 is a schematic diagram of a simulation result of turn-off effects of the power amplifier switching tube and the bias switching tube provided in the embodiment of the present application;
fig. 4 is a schematic structural diagram of a power amplifier switching tube according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of signal flow in an off state of a switching tube of a power amplifier according to an embodiment of the present disclosure;
fig. 6 is a schematic signal flow diagram of the power amplifier switch tube provided in the embodiment of the present application in an on state;
fig. 7 is a schematic diagram of a simulation result of linearity of a radio frequency switch according to an embodiment of the present application;
FIG. 8 is a schematic structural diagram of a bias switching tube according to an embodiment of the present disclosure;
fig. 9 is a schematic diagram of current flowing in an off state of a bias switching tube according to an embodiment of the present disclosure;
fig. 10 is a schematic diagram of current flowing in an on state of a bias switching tube according to an embodiment of the present disclosure;
FIG. 11 is a schematic diagram illustrating the effect of the base voltage variation of the bias switch tube on the performance of the power amplifier circuit according to the embodiment of the present application;
FIG. 12 is a schematic diagram illustrating the effect of the bias switch tube provided in the embodiment of the present application on the performance of the power amplifier circuit when the base voltage is too high;
fig. 13 is a schematic structural diagram of a power amplifier circuit according to an embodiment of the present disclosure;
fig. 14 is a schematic circuit diagram of a HBT-based radio frequency switch according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless expressly stated otherwise, as understood by those skilled in the art. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
It will be understood by those skilled in the art that all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs unless defined otherwise. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In the multimode radio frequency power amplifier, the radio frequency switch can select different amplifier stages in different frequency bands, so that multimode signal amplification is realized, the performance and reliability of the power amplifier are determined, wherein the bias current provided by the bias circuit of the radio frequency switch plays a key role in the performance of the power amplifier, however, the bias current provided for the power amplifier main circuit in the traditional bias circuit is not easy to control, and therefore, the conventional radio frequency switch can only realize switching of two states and cannot flexibly adapt to multiple working modes.
Based on this, the following technical scheme is proposed in the present application, see specifically below:
in one embodiment, as shown in fig. 1, fig. 1 is a schematic structural diagram of an HBT-based radio frequency switch according to an embodiment of the present application; the embodiment of the application provides a radio frequency switch based on an HBT, which comprises a power amplifier circuit 10, a bias circuit 20, a power amplifier switching tube 30 and a bias switching tube 40, wherein the power amplifier circuit is used as an amplifying tube of the power amplifier, and the power amplifier switching tube 30 and the bias switching tube 40 are HBT transistors.
In this embodiment, as shown in fig. 1, an input end of a power amplifier circuit 10 is respectively connected with an input end of a power amplifier switching tube 30 and one output end of a bias circuit 20, and the other output end of the bias circuit 20 is connected with an input end of a bias switching tube 40, wherein the bias circuit 20 is used for generating bias current and transmitting the bias current to the power amplifier circuit 10, the bias switching tube 40 is used for controlling the magnitude of the bias current so as to control the working mode of the power amplifier circuit 10, the power amplifier switching tube 30 is used for controlling the on and off of the power amplifier circuit 10, and the power amplifier circuit 10 is used for amplifying an input radio frequency signal.
It should be noted that, the rf signal generally has a higher frequency and a shorter wavelength, and when the transmission distance is long, the attenuation of the rf signal by air, water or other mediums may cause the attenuation of the rf signal, and the signal may be completely disappeared or very weak.
The power amplifier circuit 10 in the application is used as a circuit capable of amplifying a low-power signal into a high-power signal, and amplifying a radio-frequency signal into enough power to drive a corresponding load, the power amplifier circuit 10 generally adopts an antenna to receive the radio-frequency signal, and the received radio-frequency signal is amplified by an amplifying tube used as a power amplifier in the power amplifier circuit 10, so that the strength and quality of the radio-frequency signal are improved, and the signal attenuation and even disappearance of the radio-frequency signal in the transmission process are avoided.
The bias circuit 20 is arranged in the radio frequency switch, and can output bias current to the power amplifier circuit 10 so as to ensure that the power amplifier circuit 10 can work on an optimal working point, thereby improving the reliability and stability of the radio frequency switch, wherein the working point is the working mode of the radio frequency switch, the linearity and output power of the radio frequency switch are determined by the selection of the working point, and the performance and stability of the radio frequency switch are affected significantly.
It can be understood that in the bipolar transistor, the operating point determines the amplification factor and the distortion degree of the amplifier, when the operating point deviates from the set value too much, the transistor will operate in a nonlinear region, resulting in signal distortion and attenuation, so in the radio frequency switch, the correct operating point can be selected by adjusting the bias current, thereby ensuring high quality amplification or output of the radio frequency signal, improving the efficiency and reliability of the radio frequency switch, and avoiding the problems of signal distortion and damage.
In the application, the power amplifier switch tube 30 can be turned on and off by controlling the conduction state of the power amplifier switch tube 30, when a radio frequency switch is required to amplify a radio frequency signal, the power amplifier switch tube 30 can be turned off, so that the radio frequency signal normally enters the power amplifier circuit to be amplified, and when the radio frequency switch is not required to amplify the radio frequency signal, the power amplifier switch tube 30 can be turned on, so that the radio frequency signal flowing to the power amplifier circuit 10 is intercepted.
In the present application, the bias switching tube 40 may control the magnitude of the bias current transmitted to the power amplifier circuit 10 by the bias circuit 20 by controlling the conducting state of the collector and the emitter of the bias switching tube 40, so as to control the working mode of the power amplifier circuit 10, for example, when the bias switching tube 40 has no bias voltage, the bias switching tube 40 is not conducted, the bias current of the bias circuit 20 normally flows into the power amplifier circuit 10, when the bias switching tube 40 has a conducting voltage, and thus, when the conducting current is conducted, the conducting current is generated, the larger the conducting current is, the smaller the bias current flowing into the power amplifier circuit 10 is, and the lower the energy consumption of the power amplifier circuit 10 is.
It will be appreciated that the amplifying tube, the power amplifier switching tube 30 and the bias switching tube 40 used as the power amplifier in the power amplifier circuit in the present application are HBT transistors, which have high conductivity, low parasitic capacitance and high switching speed. The product of the current and the voltage of the off state and the on state of the HBT transistor is very small, so that the HBT transistor can realize lower switching loss, the high current gain and the high speed of the HBT transistor can improve the anti-interference performance of the HBT transistor, and the HBT transistor has high cut-off frequency and high current gain and can realize higher working frequency.
Fig. 2 is a performance comparison chart of power amplifier circuits before and after the radio frequency switch is added into the switching tube in the embodiment of the present application, as shown in fig. 2; in fig. 2, the conventional power amplifier is a radio frequency switch without adding the power amplifier switching tube 30 and the bias switching tube 40, the improved power amplifier is a radio frequency switch with adding the power amplifier switching tube 30 and the bias switching tube 40, when two switching tubes in the improved power amplifier are in an off state, radio frequency signals normally flow into the power amplifier, and the bias circuit normally works, the working state of the improved power amplifier can be equivalent to that of the conventional power amplifier, and the HBT transistor cannot greatly affect the bias current due to the low-loss characteristic of the HBT transistor, so that the integral performance of the power amplifier circuit cannot be affected in a non-negligible way after the power amplifier switching tube and the bias switching tube are added.
Specifically, as shown in fig. 3, fig. 3 is a schematic diagram of a simulation result of turn-off effects of the power amplifier switching tube and the bias switching tube provided in the embodiment of the present application; in fig. 3, the switching tube and the bias switching tube are the power amplifier switching tube 30 and the bias switching tube 40, and the improved power amplifier can consider three situations, which specifically include the following:
(1) The base stages of the power amplifier switching tube 30 and the bias switching tube 40 simultaneously give a low level, at this time, the two HBT transistors are turned off simultaneously, the radio frequency signal is not transmitted from the power amplifier switching tube 30 to the ground, the bias current does not flow from the bias switching tube 40, the bias current does not change, and the power amplifier circuit 10 works normally.
(2) The base of the power amplifier switching tube 30 gives a high level, the base of the bias switching tube 40 gives a low level, the former is turned on and the latter is turned off, the radio frequency signal is transmitted to the ground from the power amplifier switching tube 30, and basically no radio frequency signal flows into the power amplifier circuit 10, and the bias current is not changed, but the power amplifier circuit 10 stops working.
(3) The base stages of the power amplifier switching tube 30 and the bias switching tube 40 are simultaneously given a high level, at this time, the two HBT transistors are simultaneously turned on, the radio frequency signal is transmitted from the power amplifier switching tube 30 to the ground, the bias current flows from the bias switching tube 40, the bias current input into the power amplifier circuit 10 is basically 0, and the power amplifier circuit 10 stops working.
Further, when the power amplifier switch tube 30 is turned off, the power amplifier circuit 10 can normally receive the radio frequency signal, but the problems of noise interference, signal distortion and the like need to be avoided while the radio frequency signal is amplified, so that the power amplifier circuit 10 can adjust the working mode according to the intensity of the received radio frequency signal, and the bias switch tube 40 can be utilized to adjust the working mode of the bias current transmitted to the power amplifier circuit 10 by the bias circuit 20, thereby realizing a larger range of performance change of the power amplifier circuit 10.
For example, if the rf signal received by the power amplifier circuit 10 is a weak signal, the gain of the power amplifier circuit 10 can be increased by properly increasing the bias current to increase the strength of the rf signal, thereby increasing the signal-to-noise ratio; after the strength of the radio frequency signal reaches a certain threshold value, more noise is introduced and the signal to noise ratio is reduced by further increasing the power, so that the bias current can be adjusted according to the strength of the radio frequency signal and the parameters of the radio frequency switch, and a proper gain range is determined, so that the optimal signal to noise ratio is achieved and the quality of the amplified radio frequency signal is improved.
In this embodiment, the radio frequency switch includes a power amplifier circuit 10, a bias circuit 20, a power amplifier switching tube 30 and a bias switching tube 40, where the power amplifier circuit 10 is used as an amplifying tube, and the power amplifier switching tube 30 and the bias switching tube 40 are HBT transistors. In the radio frequency switch, an input end of a power amplifier circuit 10 is respectively connected with an input end of a power amplifier switching tube 30 and one output end of a bias circuit 20, and the other output end of the bias circuit 20 is connected with an input end of a bias switching tube 40, wherein the bias circuit 20 is used for generating bias current and transmitting the bias current to the power amplifier circuit 10, the bias switching tube 40 is used for controlling the magnitude of the bias current so as to control the working mode of the power amplifier circuit 10, the power amplifier switching tube 30 is used for controlling the on and off of the power amplifier circuit 10, and the power amplifier circuit 10 is used for amplifying an input radio frequency signal; the bias current transmitted to the power amplifier circuit 10 by the bias circuit 20 is changed by controlling the conducting voltage of the bias switch tube 40, for example, the current flowing into the bias switch tube 40 can be increased by increasing the conducting voltage of the bias switch tube 40, so that the bias current flowing into the power amplifier circuit 10 is smaller, the low-energy consumption mode of the power amplifier circuit 10 is started, the current flowing into the bias switch tube 40 can be reduced by reducing the conducting voltage of the bias switch tube 40, the bias current flowing into the power amplifier circuit 10 is larger, and the high-power mode of the power amplifier circuit 10 is started.
In one embodiment, as shown in fig. 4, fig. 4 is a schematic structural diagram of a power amplifier switching tube provided in the embodiment of the present application; the collector stage of the power amplifier switching tube 30 is connected with the input end of the power amplifier circuit, the base stage of the power amplifier switching tube 30 is used for receiving the first base stage voltage, and the emitter stage of the power amplifier switching tube 30 is grounded.
In this embodiment, after the power amplifier switching tube 30 receives the first base voltage by using the base, it is determined whether the power amplifier switching tube 30 can be turned on or not according to the first base voltage, when the first base voltage is smaller than a preset turn-on threshold, the power amplifier switching tube 30 is not turned on, and when the first base voltage is larger than the preset turn-on threshold, the power amplifier switching tube 30 is turned on, and when the radio frequency signal received by the radio frequency switch sequentially passes through the collector and the emitter of the power amplifier switching tube 30 and all flows to the ground.
In a specific embodiment, the present application may further describe a signal circulation manner of the power amplifier switching tube in an off state and in an on state by using the following examples, which specifically include the following:
fig. 5 is a schematic diagram of signal flow in an off state of a power amplifier switching tube according to an embodiment of the present disclosure; in fig. 5, when the first base voltage V1 in the radio frequency switch is smaller than the preset on threshold, the power amplifier switching tube 30 is in a closed state, and the power amplifier switching tube 30 is not turned on at this time, which can be equivalently a turn-off capacitor Coff, so as to isolate the radio frequency signal and ensure that the radio frequency signal cannot leak into the ground.
Fig. 6 is a schematic diagram of signal flow in an on state of a switching tube of a power amplifier according to an embodiment of the present disclosure; in fig. 6, when the first base voltage V1 in the rf switch is greater than the preset turn-on threshold, the power amplifier switching tube 30 is in an on state, and at this time, the power amplifier switching tube 30 is turned on, and the rf signals all flow into the ground, so as to realize the disconnection of the main circuit in the rf switch.
Further, the preset turn-on threshold of the power amplifier switch tube 30 is related to the parameters and performances of the HBT transistors, and the HBT transistors with different parameters and performances can be selected to adjust the preset turn-on threshold of the power amplifier switch tube 30.
Further, as shown in fig. 7, fig. 7 is a schematic diagram of a simulation result of the linearity of the rf switch according to the embodiment of the present application, in fig. 7, AM-AM (Amplitude Modulation-Amplitude Modulation, amplitude distortion) refers to a nonlinear relationship between the input signal power and the output signal power, and AM-PM (Amplitude Modulation-Phase Modulation, phase distortion) refers to a nonlinear relationship between the input signal power and the output signal Phase. The off capacitor Coff formed by the closing of the HBT transistor is related to the transistor size, when the size of the HBT transistor is smaller, the PN junction area of the HBT transistor is smaller, and the size of the off capacitor is correspondingly smaller, so that the size of the off capacitor Coff can be changed by adjusting the size of the HBT transistor, the off capacitor Coff is opened relative to the frequency of an input radio frequency signal, the radio frequency signal is prevented from leaking into the ground, a better isolation effect is achieved, the off capacitor Coff has a filtering effect relative to the radio frequency signal, redundant noise interference of the radio frequency signal can be filtered, the power amplification circuit 10 achieves better linearity, and the power amplification circuit is embodied in AM-AM and AM-PM.
In one embodiment, as shown in fig. 8, fig. 8 is a schematic structural diagram of a bias switching tube provided in an embodiment of the present application; the collector of the bias switching tube 40 is connected to the other output of the bias circuit 20, the base of the bias switching tube 40 is used for receiving the second base voltage, and the emitter of the bias switching tube 40 is grounded.
In this embodiment, after the base stage of the bias switching tube 40 receives the second base stage voltage, it can be determined whether the magnitude of the second base stage voltage can turn on the bias switching tube 40, when the second base stage voltage is smaller than the turn-on threshold of the bias switching tube 40, the bias switching tube 40 is not turned on, at this time, all the bias current output by the bias circuit 20 flows to the power amplifier circuit, when the second base stage voltage is larger than the turn-on threshold of the bias switching tube 40, the bias switching tube 40 is turned on, at this time, the bias current flows to the ground through the collector and the emitter of the bias switching tube 40, so as to control the magnitude of the bias current transmitted to the power amplifier circuit 10.
In a specific embodiment, the present application may further describe a current flowing manner of the bias switch tube in the off state and in the on state by the following examples, which specifically include the following:
fig. 9 is a schematic diagram of signal flow in an off state of a bias switching tube according to an embodiment of the present disclosure; in fig. 9, when the power amplifier switching tube 30 is turned off and the second base voltage V2 in the radio frequency switch is smaller than the on threshold of the bias switching tube 40, the bias switching tube 40 is in a closed state, the bias switching tube 40 is not turned on, the bias switching tube 40 is equivalent to an off capacitor Coff, direct current can be blocked, the bias circuit 20 supplies power normally, and the power amplifier circuit 10 works normally.
Fig. 10 is a schematic diagram of signal flow in an on state of a bias switching tube according to an embodiment of the present disclosure; in fig. 10, when the power amplifier switching transistor 30 is turned off and the second base voltage V2 in the radio frequency switch is greater than the on threshold of the bias switching transistor 40, the bias switching transistor 40 is turned on, and the bias current can flow from the HBT transistor to the ground, so that the bias circuit is affected by the HBT transistor, and the collector current of the HBT transistor can be controlled by controlling the second base voltage V2, which means that the bias circuit can only output a fixed current, but the on current flowing through the HBT transistor can be changed by controlling the value of the second base voltage V2, so that the current flowing into the power amplifier circuit 10 is changed, thereby realizing various operation modes of the radio frequency switch.
For example, when the rf switch needs to save power, the bias current flowing into the bias switching tube 40 can be increased by increasing the second base voltage V2 voltage, so that the bias current flowing into the power amplifier circuit 10 is smaller, thereby reducing the power consumption of the rf switch; when the rf switch needs to operate with high power, the bias current flowing into the bias switching tube 40 can be reduced by reducing the second base voltage V2, so that the bias current flowing into the power amplifier circuit 10 is increased, and better rf switch performance is achieved.
Further, as shown in fig. 11, fig. 11 is a schematic diagram illustrating an influence of a base-level voltage variation of the bias switching tube on the performance of the power amplifier circuit according to the embodiment of the present application; in fig. 11, when the power amplifier switching tube 30 is turned off, the power amplifier circuit can realize a relatively large range of performance variation along with the change of the second base voltage V2, and when the second base voltage V2 is reduced, the power amplifier circuit realizes a narrow-band gain increase, but linearity and gain flatness are slightly reduced; when the second base level voltage V2 is increased, the power amplifier circuit can realize a broadband effect, the gain is slightly reduced, but the linearity is optimized, and the gain flatness is improved, so that the radio frequency switch can adjust the second base level voltage V2 according to actual requirements, and the power amplifier circuit achieves an optimal point of signal amplification; in addition, the HBT transistor has the characteristic of low loss, no extra loss is brought to the radio frequency switch, and the off capacitor Coff formed by the closing of the HBT transistor adopted by the bias switch tube 40 has the filtering function, and the noise generated by the passive device of the bias circuit 20 is transmitted into the power amplifier circuit 10 to cause non-negligible interference, so that the off capacitor Coff can filter the noise generated in the bias circuit 20 at this time, and the linearity of the radio frequency switch is improved.
Further, as shown in fig. 12, fig. 12 is a schematic diagram illustrating an influence of the bias switching tube provided in the embodiment of the present application on the performance of the power amplifier circuit when the base voltage is too high; in fig. 12, when the base voltage of the bias switching transistor 40 is too high, a good turn-off effect can be achieved, and the bias current given to the power amplifier circuit 10 by the bias circuit is almost zero, so that the power amplifier circuit 10 is turned off.
In one embodiment, as shown in fig. 13, fig. 13 is a schematic structural diagram of a power amplifier circuit provided in an embodiment of the present application; in fig. 13, the power amplifier circuit 10 includes an amplifying tube 11 and a matching circuit 12, wherein an input end of the amplifying tube 11 is respectively connected with an input end of a power amplifier switching tube 30 and one output end of a bias circuit 20, one output end is connected with a power supply, and the other output end is connected with an input end of the matching circuit 12; the amplifying tube 11 is configured to receive the radio frequency signal and the bias current output by the bias circuit 20, amplify the radio frequency signal according to the bias current, and transmit the amplified radio frequency signal to the matching circuit 12, where the matching circuit 12 is configured to filter the amplified radio frequency signal and output the filtered radio frequency signal.
In this embodiment, the amplifying tube 11 is used as a power amplifier in the power amplifier circuit 10, and receives the radio frequency signal and the bias current transmitted by the bias circuit 20 when the power amplifier switch tube 30 is turned off, and adjusts the working state of the amplifying tube 11 according to the magnitude of the bias current to amplify the received radio frequency signal, and because the amplified radio frequency signal has high frequency noise and interference, the amplified radio frequency signal can be transmitted to the matching circuit 12, so that the matching circuit 12 filters the radio frequency signal and outputs the filtered radio frequency signal.
Specifically, as shown in fig. 14, fig. 14 is a schematic circuit diagram of a HBT-based radio frequency switch according to an embodiment of the present application; in fig. 14, Q3 is an amplifying tube 11, the matching circuit 12 formed by the capacitor C3, the capacitor C4 and the inductor L2 is a T-type matching loop, which is a common filter loop, also called a T-type filter, and is generally used for impedance matching and high-frequency filtering at the output end of the amplifying tube, so as to effectively filter out high-frequency noise and interference in an output signal, wherein the capacitor C3 and the inductor L2 form an LC resonant loop for limiting high-frequency components in the output signal, and the capacitor C4 is used for impedance matching to convert high impedance at the output end of the amplifying tube 11 into low impedance, thereby improving efficiency and quality of radio-frequency signal transmission.
In one embodiment, as shown in fig. 14, the base stage of the amplifying tube 11 may be an input terminal, the collector stage of the amplifying tube 11 may be an output terminal, and the emitter of the amplifying tube 11 is grounded.
In this embodiment, when the power amplifier switching tube Q1 is turned off, the base stage of the amplifying tube Q3 receives the radio frequency signal and the bias current input by the bias circuit 20, and then adds the bias current to the base stage, so that the radio frequency signal can be controlled to flow from the base stage to the collector, and the radio frequency signal is amplified, and after the amplifying tube Q3 amplifies the radio frequency signal, the amplified radio frequency signal is output from the collector stage to the matching circuit 12, and at this time, no signal passes through the emitter of the amplifying tube Q3.
It should be noted that, in the use scenario of the radio frequency switch, the MOS transistor is often used in engineering, the HBT transistor is often used in the power amplifier, the use of the two processes is unfavorable for implementation in a single chip, and the HBT as the switch transistor is favorable for integration as the radio frequency switch, and has the characteristics of high amplification factor, good stability, high linearity, and the like, so that the performance and stability of the radio frequency switch can be ensured, and therefore, the HBT transistor is adopted in the amplifier 11 of the present application, so that the integration in the radio frequency switch and the radio frequency power amplifier can be realized in the single chip.
In one embodiment, as shown in fig. 14, the power amplifier circuit 10 further includes a feedback circuit, two ends of which are respectively connected to the input terminal and the output terminal of the amplifying tube Q3, for returning a part of the signal output from the amplifying tube Q3 to the input terminal of the amplifying tube.
In this embodiment, the feedback circuit is formed by connecting a resistor R2 and a capacitor C2 in series, wherein the other end of the capacitor C2 in the feedback circuit can be connected with the collector of the amplifying tube Q3, and the other end of the resistor R2 is connected with the base of the amplifying tube Q3.
Specifically, in the present application, an RC series loop formed by a resistor R2 and a capacitor C2 is used as a feedback loop to connect the base and the emitter of the amplifying tube Q3, and a part of signals output by the collector can be injected into radio frequency signals input by the base stage of the amplifying tube Q3, so as to realize adjustment and control of the performance such as gain, bandwidth, stability and the like of the power amplifier circuit 10.
It should be noted that, since the phase of the radio frequency signal returned by the feedback circuit is opposite to the phase of the radio frequency signal received by the amplifying tube Q3, the phase and the amplitude of the returned radio frequency signal can be controlled by adjusting the parameters of the resistor R2 and the capacitor C2, so as to realize the adjustment and control of the performance such as the gain, the bandwidth, the stability and the like of the power amplifier circuit 10; the feedback circuit can be designed according to specific application scenes and requirements, and in practical application, parameters and performance of the feedback circuit can be optimized through calculation and simulation. Meanwhile, the design of the feedback circuit is also affected by the performance and characteristics of the amplifier, so that factors such as input impedance, output impedance, bandwidth and the like of the amplifier need to be considered.
In one embodiment, as shown in fig. 14, the power amplifier circuit 10 further includes a choke inductor L1, where the choke inductor L1 is connected between the output end of the amplifying tube Q3 and the power supply, and is used for blocking the amplified radio frequency signal.
In this embodiment, the choke inductor L1 is a device for limiting the current change rate in the circuit, and is made of a coil, and is generally used in circuits such as a direct current-direct current (DC-DC) converter, a power filter, and a current source, where the choke inductor L1 may be used to connect between the output end of the amplifying tube Q3 and the power supply, to prevent a radio frequency signal from flowing to the power supply voltage VDD, and its value may be 5V, so as to be able to participate in output matching of the power amplifier circuit 10.
It will be appreciated that the choke inductance L1 may limit the rate of current change in the circuit by its own inductance characteristics, and when the rate of current change in the circuit is large, the choke inductance L1 may generate a reverse potential, thereby suppressing the current change, and this characteristic makes the choke inductance L1 widely used in many circuits, such as a power filter for filtering high frequency noise, a direct current-direct current (DC-DC) converter for stabilizing an output voltage, etc., and the parameters and performance of the choke inductance may be selected by the actual use scenario of the circuit at the time of application.
In one embodiment, as shown in fig. 14, the power amplifier circuit 10 further includes a current limiting resistor R1, where the current limiting resistor R1 is disposed between a resistor R2 in the feedback circuit and an input terminal of the amplifying tube Q3, and is used to control the magnitude of a signal returned by the feedback circuit.
In this embodiment, the current limiting resistor R1 is disposed between the output end of the feedback circuit and the input end of the amplifying tube Q3, so as to limit the signal returned by the feedback circuit, thereby adjusting the gain of the feedback circuit and improving the stability and linearity of the power amplifier circuit 10.
Specifically, when the resistance value of the current limiting resistor R1 is smaller, the signal returned by the feedback circuit increases, the load capacity of the power amplifier circuit increases, the working temperature and the power consumption of the power amplifier circuit increase, and thus the stability of the power amplifier circuit 10 decreases; when the resistance value of the current limiting resistor R1 is larger, the signal returned by the feedback circuit is reduced, the load capacity of the power amplifier circuit is reduced, and the working temperature and the power consumption of the power amplifier circuit are reduced, so that the stability of the power amplifier circuit 10 is reduced.
In one embodiment, as shown in FIG. 14, the bias circuit 20 may include a current mirror bias circuit, a divider resistor R3, and a temperature compensation resistor R4; the input end of the current mirror bias circuit is connected with the reference voltage Vref through a temperature compensation resistor R4, and the output end of the current mirror bias circuit is connected with the input end of the power amplifier circuit through a voltage dividing resistor R3.
In this embodiment, the current mirror bias circuit is configured by a transistor Q4 and a transistor Q5, where the base of the transistor Q4 is connected to the base of the transistor Q5, the collector of the transistor Q4 is connected to the power supply voltage VDD, the emitter of the transistor Q4 is connected to one end of the voltage dividing resistor R3, the collector of the transistor Q5 is grounded, the emitter is connected to one end of the temperature compensating resistor R4, and the other end of the voltage dividing resistor R3 is connected to the input end of the power amplifier circuit, and the other end of the temperature compensating resistor R4 is connected to the reference voltage Vref.
Specifically, the current mirror bias circuit formed by the transistor Q4 and the transistor Q5 can generate stable bias current, the generated bias current can be controlled by the width-to-length ratio of the transistor Q4 and the transistor Q5, the voltage dividing resistor R3 can provide stable gate voltage for the power amplifier circuit 10, the amplifier Q3 of the power amplifier circuit 10 can be ensured to be stably turned on, the temperature compensating resistor R4 can realize temperature compensation, so that the bias current provided by the bias circuit 20 is more stable, and the temperature compensating resistor R4 can select resistors with different temperature coefficients according to the performance of the radio frequency switch, so that the bias current of the bias circuit 20 is ensured to be insensitive to temperature variation.
It is understood that the aspect ratio of a transistor refers to the ratio of the width to the length of the transistor, and in circuit design, the aspect ratio may affect the current, speed, noise, and other properties of the transistor. In a current mirror bias circuit, the aspect ratio of a transistor may be used to control the bias voltage of the output voltage, with the current of the transistor increasing as the aspect ratio of the transistor increases, thereby affecting the power consumption and speed of the bias circuit.
In one embodiment, as shown in fig. 14, the bias circuit 20 may further include a filter capacitor C5, where the filter capacitor C5 is connected to an input terminal of the current mirror bias circuit, and is configured to block the radio frequency signal from flowing into the current mirror bias circuit.
In this embodiment, the filter capacitor C5 is used as a filter capacitor for a dc bias circuit, and can perform impedance matching and filtering on a high-frequency signal on a transmission line, and at the same time, it can stabilize a dc component in the bias circuit 20, so as to avoid noise interference due to an external environment or a radio-frequency signal entering the bias circuit 20 and influence the dc component in the bias circuit, thereby influencing the operating state and performance of a transistor and ensuring the stability of the bias circuit 20.
The above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the corresponding technical solutions.

Claims (10)

1. The radio frequency switch based on the HBT is characterized by comprising a power amplifier circuit, a bias circuit, a power amplifier switching tube and a bias switching tube; the amplifying tube used as the power amplifier, the power amplifier switching tube and the bias switching tube in the power amplifier circuit are HBT transistors;
the input end of the power amplifier circuit is respectively connected with the input end of the power amplifier switching tube and one path of output end of the bias circuit, and the other path of output end of the bias circuit is connected with the input end of the bias switching tube;
the bias circuit is used for generating bias current and transmitting the bias current to the power amplifier circuit;
the bias switch tube is used for controlling the magnitude of the bias current so as to control the working mode of the power amplifier circuit;
the power amplifier switching tube is used for controlling the on and off of the power amplifier circuit;
the power amplifier circuit is used for amplifying an input radio frequency signal.
2. The radio frequency switch of claim 1, wherein a collector stage of the power amplifier switching tube is connected to an input terminal of the power amplifier circuit, a base stage of the power amplifier switching tube is configured to receive a first base stage voltage, and an emitter stage of the power amplifier switching tube is grounded.
3. The radio frequency switch of claim 1, wherein a collector stage of the bias switching tube is connected to another output of the bias circuit, a base stage of the bias switching tube is configured to receive a second base stage voltage, and an emitter stage of the bias switching tube is grounded.
4. The radio frequency switch of claim 1, wherein the power amplifier circuit comprises a matching circuit and an amplifying tube;
the input end of the amplifying tube is respectively connected with the input end of the power amplifying switch tube and one path of output end of the biasing circuit, one path of output end is connected with a power supply, and the other path of output end is connected with the input end of the matching circuit;
the amplifying tube is used for receiving the radio frequency signal and the bias current output by the bias circuit, amplifying the radio frequency signal according to the bias current and transmitting the amplified radio frequency signal to the matching circuit;
the matching circuit is used for filtering the amplified radio frequency signals and outputting the filtered radio frequency signals.
5. The radio frequency switch of claim 4, wherein the base of the amplifying tube is an input terminal; the collector stage of the amplifying tube is an output end; the emitter of the amplifying tube is grounded.
6. The radio frequency switch of claim 4, wherein the power amplifier circuit further comprises a feedback circuit;
and two ends of the feedback circuit are respectively connected with the input end and the output end of the amplifying tube and are used for returning part of signals output by the amplifying tube to the input end of the amplifying tube.
7. The radio frequency switch of claim 4, wherein the power amplifier circuit further comprises a choke inductance;
the choke inductance is connected between the output end of the amplifying tube and the power supply and is used for blocking the amplified radio frequency signals.
8. The radio frequency switch of claim 6, wherein the power amplifier circuit further comprises a current limiting resistor;
the current limiting resistor is arranged between the feedback circuit and the input end of the amplifying tube and is used for controlling the signal returned by the feedback circuit.
9. The radio frequency switch of claim 1, wherein the bias circuit comprises a current mirror bias circuit, a voltage divider resistor, and a temperature compensation resistor;
the input end of the current mirror bias circuit is connected with the reference voltage through the temperature compensation resistor, and the output end of the current mirror bias circuit is connected with the input end of the power amplifier circuit through the voltage dividing resistor.
10. The radio frequency switch of claim 9, wherein the bias circuit further comprises a filter capacitor;
the filter capacitor is connected with the input end of the current mirror bias circuit and used for blocking the radio frequency signal from flowing into the current mirror bias circuit.
CN202310628323.4A 2023-05-31 2023-05-31 HBT-based radio frequency switch Active CN116346107B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310628323.4A CN116346107B (en) 2023-05-31 2023-05-31 HBT-based radio frequency switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310628323.4A CN116346107B (en) 2023-05-31 2023-05-31 HBT-based radio frequency switch

Publications (2)

Publication Number Publication Date
CN116346107A true CN116346107A (en) 2023-06-27
CN116346107B CN116346107B (en) 2023-08-11

Family

ID=86893421

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310628323.4A Active CN116346107B (en) 2023-05-31 2023-05-31 HBT-based radio frequency switch

Country Status (1)

Country Link
CN (1) CN116346107B (en)

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101499776A (en) * 2008-02-02 2009-08-05 华润矽威科技（上海）有限公司 Circuit and method for reducing switching noise of amplifier
CN103051354A (en) * 2012-12-17 2013-04-17 中国科学院半导体研究所 Wireless transceiver with on-chip ultra-low power consumption
CN209072437U (en) * 2018-10-22 2019-07-05 东南大学 A kind of dynamic body bias E power-like amplifier
US20200067456A1 (en) * 2017-07-24 2020-02-27 Smarter Microelectronics (Shanghai) Co., Ltd. Bias circuit and power amplification circuit
CN111384900A (en) * 2018-12-26 2020-07-07 株式会社村田制作所 Power amplification circuit and power amplification module
CN114583846A (en) * 2022-02-25 2022-06-03 西北工业大学太仓长三角研究院 Dual-mode switching circuit of power amplifier rectifier
CN114629448A (en) * 2022-01-27 2022-06-14 锐石创芯(深圳)科技股份有限公司 Radio frequency power amplifying circuit and radio frequency front end module
CN115913126A (en) * 2022-11-28 2023-04-04 锐磐微电子科技(上海)有限公司 Radio frequency power amplifier and radio frequency front end module
CN116131774A (en) * 2022-12-30 2023-05-16 锐石创芯(深圳)科技股份有限公司 Power amplifier and radio frequency front-end circuit

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101499776A (en) * 2008-02-02 2009-08-05 华润矽威科技（上海）有限公司 Circuit and method for reducing switching noise of amplifier
CN103051354A (en) * 2012-12-17 2013-04-17 中国科学院半导体研究所 Wireless transceiver with on-chip ultra-low power consumption
US20200067456A1 (en) * 2017-07-24 2020-02-27 Smarter Microelectronics (Shanghai) Co., Ltd. Bias circuit and power amplification circuit
CN209072437U (en) * 2018-10-22 2019-07-05 东南大学 A kind of dynamic body bias E power-like amplifier
CN111384900A (en) * 2018-12-26 2020-07-07 株式会社村田制作所 Power amplification circuit and power amplification module
CN114629448A (en) * 2022-01-27 2022-06-14 锐石创芯(深圳)科技股份有限公司 Radio frequency power amplifying circuit and radio frequency front end module
CN114583846A (en) * 2022-02-25 2022-06-03 西北工业大学太仓长三角研究院 Dual-mode switching circuit of power amplifier rectifier
CN115913126A (en) * 2022-11-28 2023-04-04 锐磐微电子科技(上海)有限公司 Radio frequency power amplifier and radio frequency front end module
CN116131774A (en) * 2022-12-30 2023-05-16 锐石创芯(深圳)科技股份有限公司 Power amplifier and radio frequency front-end circuit

Also Published As

Publication number Publication date
CN116346107B (en) 2023-08-11

Similar Documents

Publication Publication Date Title
US7109790B2 (en) High linearity doherty communication amplifier with integrated output matching unit
US7688133B2 (en) Power amplifier
US6215355B1 (en) Constant impedance for switchable amplifier with power control
CN109560777B (en) Active bias Casode radio frequency amplifier
KR102320461B1 (en) Transceiver circuit
US20070222523A1 (en) Multi-stage power amplifier with enhanced efficiency
JPH07154169A (en) High frequency power amplifier
CN102859867B (en) There is the power amplifier of low-noise factor and voltage variable gain
WO2012157645A1 (en) Power amplifier and operating method for same
KR20050058306A (en) Amplification device
US11616480B2 (en) Power amplifier circuit
WO2024066713A1 (en) Multi-band gain-adjustable low noise amplifier
CN111600556A (en) Low noise amplifier and radio frequency receiver
CN109194291A (en) A kind of one chip low-noise amplifier of the high-gain High Linear with bypass functionality
JP2024500119A (en) differential power amplifier
KR101590605B1 (en) Linear power amplifier for wireless transmitter
CN116346107B (en) HBT-based radio frequency switch
CN114531121B (en) Linear power amplifier insensitive to temperature
US11606066B2 (en) Power amplifier circuit
CN104485904A (en) Wideband radio frequency power amplifier
CN220440676U (en) Low-noise distributed amplifier and circuit
CN113206646B (en) Radio frequency amplifier
CN115940827B (en) Low noise amplifier circuit and wireless communication system
CN117395761B (en) Power supply and bias adjustable radio frequency front end module and radio frequency chip
CN115395903A (en) Self-biased radio frequency power amplifier with power protection

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant