CN115395903A - Self-biased radio frequency power amplifier with power protection - Google Patents
Self-biased radio frequency power amplifier with power protection Download PDFInfo
- Publication number
- CN115395903A CN115395903A CN202211004403.4A CN202211004403A CN115395903A CN 115395903 A CN115395903 A CN 115395903A CN 202211004403 A CN202211004403 A CN 202211004403A CN 115395903 A CN115395903 A CN 115395903A
- Authority
- CN
- China
- Prior art keywords
- radio frequency
- transistor
- self
- power
- frequency transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses a self-bias radio frequency power amplifier with power protection, which comprises a radio frequency transistor, an input matching network, an output matching network, a drain bias network and a self-bias power protection circuit. The self-bias power protection circuit is connected with the grid electrode and the source electrode of the radio frequency transistor and comprises four MOS transistors; the grid electrodes of the three MOS transistors are all connected with a first grid voltage, the drain electrodes are all connected with the source electrode of the radio frequency transistor, and the source electrodes are all grounded; the three MOS transistors are respectively used as variable resistors, and different resistance values are provided by changing the first grid voltage, so that the gain of the radio frequency transistor in a saturation region is reduced; the grid electrode of the other MOS transistor is connected with the second grid voltage, the drain electrode is connected with the grid electrode of the radio frequency transistor, and the source electrode is grounded; the second gate voltage is reduced along with the increase of the input power of the radio frequency transistor; the other MOS transistor also serves as a variable resistor, and the resistance value of the other MOS transistor is increased when the input power of the radio frequency transistor is increased, so that the radio frequency input signal is prevented from leaking to the ground.
Description
Technical Field
The invention relates to a radio frequency power amplifier.
Background
Radio frequency power amplifiers are important devices in wireless communication systems. In a wireless transceiving system, a radio frequency power amplifier is responsible for amplifying signals, so that the signals are transmitted farther and the signal strength is higher, and the performance of the radio frequency power amplifier determines the performance of the whole communication system. In some special application occasions, the radio frequency power amplifier is burnt out due to overlarge input signals, so that the radio frequency power amplifier with the power protection function is particularly important.
The existing radio frequency power amplifier with power protection mainly feeds back the source electrode of a radio frequency transistor to a grid electrode through a resistor, so that a grid electrode voltage supply circuit can be omitted, and the gain of the radio frequency transistor can be sharply reduced under the condition of high-power input by adjusting a proper resistor, so that the radio frequency power amplifier is prevented from being supersaturated and damaged. The disadvantage of this solution is that the appropriate resistance value needs to be adjusted by additional circuitry.
Disclosure of Invention
The present invention provides a radio frequency power amplifier, which is capable of providing self-bias and has power protection to solve the problem that the radio frequency power amplifier is burnt out under a large input power.
In order to solve the technical problem, the invention discloses a self-bias radio frequency power amplifier with power protection, which comprises a radio frequency transistor, an input matching network, an output matching network, a drain electrode bias network and a self-bias power protection circuit. The radio frequency transistor has a gate, a source, and a drain. The input matching network is connected with the grid electrode of the radio frequency transistor and used for matching with the input impedance of the radio frequency transistor. The output matching network is connected with the drain electrode of the radio frequency transistor and is used for matching with the output impedance of the radio frequency transistor. The drain bias network is between a supply voltage and a drain of the radio frequency transistor and is used for providing a drain bias voltage for the radio frequency transistor. The self-bias power protection circuit is connected with a grid electrode and a source electrode of the radio frequency transistor and comprises four MOS transistors; the grid electrodes of the three MOS transistors are all connected with a first grid voltage, the drain electrodes are all connected with the source electrode of the radio frequency transistor, and the source electrodes are all grounded; the three MOS transistors are respectively used as variable resistors, and different resistance values are provided by changing the first grid voltage, so that the gain of the radio frequency transistor in a saturation region is reduced; the grid electrode of the other MOS transistor is connected with the second grid voltage, the drain electrode is connected with the grid electrode of the radio frequency transistor, and the source electrode is grounded; the second gate voltage is reduced along with the increase of the input power of the radio frequency transistor; the other MOS transistor also serves as a variable resistor, and the resistance value of the other MOS transistor is increased when the input power of the radio frequency transistor is increased, so that the radio frequency input signal is prevented from leaking to the ground.
Preferably, the radio frequency transistor is a high electron mobility transistor HEMT or a MOS transistor.
Preferably, an input blocking capacitor is further provided between the input matching network and the gate of the radio frequency transistor.
Preferably, an output blocking capacitor is arranged between the drain electrode of the radio frequency transistor and the output matching network.
Further, the self-bias power protection circuit supplies the drain direct current signal of the radio frequency transistor to the grid electrode of the radio frequency transistor through four MOS transistors, and then realizes the self-bias of the grid electrode of the radio frequency transistor under the combined action of the input power of the radio frequency transistor.
Alternatively, in the self-bias power protection circuit, any one or more MOS transistors are replaced by a switched diode series resistor.
Alternatively, the other MOS transistor is instead an inductor.
Further, the self-biased radio frequency power amplifier with power protection also comprises a grounded capacitor; the grounding capacitor is used for grounding the source electrode of the radio frequency transistor and preventing an output signal of the radio frequency transistor from leaking to the input end.
Further, the four MOS transistors and a grounded capacitor form a grid biasing network of the self-biasing radio frequency power amplifier with power protection.
The invention has the technical effects that: the special function is realized by a relatively simple circuit structure without controlling a radio frequency input signal and adding an attenuator. The invention takes a part of the grid bias network as a self-bias power protection circuit, thereby realizing the self-bias of the grid voltage of the radio frequency transistor and realizing the power protection of the radio frequency transistor under the large input power.
Drawings
Fig. 1 is a circuit schematic diagram of a self-biased rf power amplifier with power protection according to the present disclosure.
Fig. 2 is a graph illustrating input power and gain of the rf power amplifier disclosed in the present invention.
Fig. 3 is a schematic diagram of a saturation region and a back-off region of a radio frequency transistor.
The reference numbers in the figures illustrate that: q0 is a radio frequency transistor, Q1 to Q4 are MOS transistors, C1 is a grounded capacitor, C2 is an input blocking capacitor, C3 is an output blocking capacitor, vin is a radio frequency input signal, vout is a radio frequency output signal, vcc is a power supply voltage, vg1 is a first gate voltage, and Vg2 is a second gate voltage.
Detailed Description
Referring to fig. 1, the self-biased rf power amplifier with power protection of the present invention includes: a radio frequency transistor Q0, an input matching network, an output matching network, a drain bias network, and a gate bias network.
The rf transistor Q0 is, for example, a HEMT (high electron mobility transistor) or a MOS transistor (metal-oxide-semiconductor field-effect transistor), and has a gate, a source, and a drain.
The input matching network is connected with the grid electrode of the radio frequency transistor Q0 and is used for matching with the input impedance of the radio frequency transistor Q0, so that the radio frequency input signal Vin enters the radio frequency transistor Q0 with low loss. The input matching network is used for matching the optimal input impedance of the radio frequency transistor Q0 to the load impedance so as to prevent the radio frequency input signal Vin from reflecting too much to cause device damage. Preferably, an input blocking capacitor C2 is further provided between the input matching network and the gate of the rf transistor Q0, for preventing the dc signal from leaking to the load end, so as to make the dc signal flow into the rf transistor Q0.
The output matching network is connected with the drain electrode of the radio frequency transistor Q0 and is used for matching with the output impedance of the radio frequency transistor Q0, so that the signal of the radio frequency transistor is output with low loss to obtain a radio frequency output signal Vout. The output matching network matches the optimal output impedance of the radio frequency transistor Q0 to the load impedance, so that the radio frequency transistor Q0 completes maximum power transmission and reduces loss. Preferably, an output blocking capacitor C3 is further provided between the drain of the rf transistor Q0 and the output matching network, for preventing the dc signal from leaking to the load end, so as to make the dc signal flow into the rf transistor Q0.
The drain bias network is arranged between a power supply voltage Vcc and a drain electrode of the radio frequency transistor Q0 and is used for providing drain bias voltage for the radio frequency transistor Q0, preventing energy of the radio frequency transistor Q0 from leaking out and preventing alternating current signals from leaking to a direct current end.
The grid biasing network is connected with the grid and the source of the radio frequency transistor Q0 and comprises four MOS transistors Q1 to Q4 and a grounding capacitor C1. The grounding capacitor C1 grounds the source electrode of the radio frequency transistor Q0, is used for preventing the output signal of the radio frequency transistor Q0 from leaking to the input end, prevents the drain electrode energy of the radio frequency transistor Q0 from leaking to the grid electrode, and plays a role of a radio frequency bypass. The four MOS transistors Q1 to Q4 constitute a self-bias power protection circuit. In the self-bias power protection circuit, the grids of three MOS transistors Q1 to Q3 are all connected with a first grid voltage Vg1, the drains of the three MOS transistors Q1 to Q3 are all connected with the source electrode of a radio frequency transistor Q0, and the source electrodes of the three MOS transistors Q1 to Q3 are all grounded. The three MOS transistors Q1 to Q3 respectively provide a variable resistor, and different resistance values are provided by changing the gate bias voltage (first gate voltage Vg 1) thereof to change the gain of the radio frequency transistor Q0, so that the gain of the radio frequency transistor Q0 in a saturation region is sharply reduced, thereby realizing the function of power protection of the radio frequency transistor Q0. The gate of the MOS transistor Q4 is connected to the second gate voltage Vg2, the drain of the MOS transistor Q4 is connected to the gate of the rf transistor Q0, and the source of the MOS transistor Q4 is grounded. The second gate voltage Vg2 decreases with the increase of the input power of the rf transistor Q0, so as to make the MOS transistor Q4 a variable resistor, and the resistance of the MOS transistor Q4 becomes larger when the input power of the rf transistor Q0 increases. The MOS transistor Q4 serves to prevent the radio frequency input signal Vin from leaking to the ground, while the gain of the back-off region of the radio frequency transistor Q0 can be changed (increased or decreased).
The self-bias power protection circuit is a bias circuit which supplies a drain direct-current signal of a radio-frequency transistor Q0 to a grid electrode of the radio-frequency transistor Q0 through four MOS transistors Q1 to Q4 and realizes the grid electrode of the radio-frequency transistor Q0 under the combined action of input power of the radio-frequency transistor Q0, namely, self-bias is realized.
In the self-bias power protection circuit, four MOS transistors Q1 to Q4 function as variable resistors. Alternatively, any one or more of the MOS transistors may instead be treated as a variable resistor by switching a diode in series with a resistor. The MOS transistor Q4 may be an inductor. When the input power of the rf transistor Q0 is large and reaches or exceeds the rated power of the rf transistor Q0 (schematically shown as 22dBm in fig. 2), the four MOS transistors Q1 to Q4 can be adjusted to different resistance values by changing the two gate voltages Vg1 and Vg2 of the four MOS transistors Q1 to Q4, so as to drive the gain of the rf transistor Q0 to drop sharply, thereby realizing power protection for the rf transistor Q0, as shown in fig. 2.
Referring to fig. 3, the back-off region of the rf transistor is a region with gain compression of more than 1dB, and the saturation region of the rf transistor is a region with maximum output power. The boundary point between the back-off region and the saturation region is the output power (i.e., the rated power) corresponding to 1dB of gain compression. The power rating of a transistor is related to the physical properties of the transistor. Referring to fig. 2, if the power rating of the rf transistor Q0 is 22dBm, it can be considered that the input power above 22dBm is a saturation region of the rf transistor, and the input power below 22dBm is a back-off region of the rf transistor.
Compared with the prior art, the invention has the following beneficial technical effects. First, the present invention provides a self-bias power protection circuit for a radio frequency transistor, which not only realizes self-bias of a gate voltage of the radio frequency transistor, but also realizes power protection of the radio frequency transistor under large input power. Secondly, the invention does not need additional power attenuation circuit and power check circuit, thus greatly saving circuit area and power consumption. Thirdly, the invention does not need to control or limit the power of the radio frequency input signal, and is suitable for wider radio frequency power amplifiers.
The above are merely preferred embodiments of the present invention, and are not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A self-bias radio frequency power amplifier with power protection is characterized by comprising a radio frequency transistor, an input matching network, an output matching network, a drain electrode bias network and a self-bias power protection circuit;
the radio frequency transistor is provided with a grid electrode, a source electrode and a drain electrode;
the input matching network is connected with the grid electrode of the radio frequency transistor and is used for matching with the input impedance of the radio frequency transistor;
the output matching network is connected with the drain electrode of the radio frequency transistor and is used for matching with the output impedance of the radio frequency transistor;
the drain electrode bias network is arranged between a power supply voltage and the drain electrode of the radio frequency transistor and is used for providing a drain electrode bias voltage for the radio frequency transistor;
the self-bias power protection circuit is connected with the grid electrode and the source electrode of the radio frequency transistor and comprises four MOS transistors; the grid electrodes of the three MOS transistors are all connected with a first grid voltage, the drain electrodes are all connected with the source electrode of the radio frequency transistor, and the source electrodes are all grounded; the three MOS transistors are respectively used as variable resistors, and different resistance values are provided by changing the first grid voltage, so that the gain of the radio frequency transistor in a saturation region is reduced; the grid electrode of the other MOS transistor is connected with the second grid voltage, the drain electrode is connected with the grid electrode of the radio frequency transistor, and the source electrode is grounded; the second gate voltage is reduced along with the increase of the input power of the radio frequency transistor; the other MOS transistor also serves as a variable resistor, and the resistance value of the other MOS transistor is increased when the input power of the radio frequency transistor is increased, so that the radio frequency input signal is prevented from leaking to the ground.
2. The self-biasing rf power amplifier with power protection as claimed in claim 1, wherein the rf transistor is a High Electron Mobility Transistor (HEMT) or a MOS transistor.
3. The self-biasing rf power amplifier with power protection as claimed in claim 1, further comprising an input blocking capacitor between the input matching network and the gate of the rf transistor.
4. The self-biasing rf power amplifier with power protection as claimed in claim 1, further comprising an output dc blocking capacitor between the drain of the rf transistor and the output matching network.
5. The self-biased rf power amplifier with power protection as claimed in claim 1, wherein the self-biased power protection circuit is configured to supply the dc signal from the drain of the rf transistor to the gate of the rf transistor through four MOS transistors, and then to realize the self-biasing of the gate of the rf transistor under the combined action of the input power of the rf transistor.
6. The self-biased rf power amplifier with power protection of claim 1, wherein any one or more MOS transistors in the self-biased power protection circuit are replaced with a switched diode series resistor.
7. The self-biasing rf power amplifier with power protection as claimed in claim 1, wherein the further MOS transistor is instead an inductor.
8. The self-biased power protected rf power amplifier of claim 1, wherein the self-biased power protected rf power amplifier further comprises a capacitor to ground; the grounding capacitor grounds the source of the radio frequency transistor to prevent the output signal of the radio frequency transistor from leaking to the input terminal.
9. The self-biased rf power amplifier with power protection as claimed in claim 8, wherein the four MOS transistors and a capacitor to ground form a gate bias network of the self-biased rf power amplifier with power protection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211004403.4A CN115395903A (en) | 2022-08-22 | 2022-08-22 | Self-biased radio frequency power amplifier with power protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211004403.4A CN115395903A (en) | 2022-08-22 | 2022-08-22 | Self-biased radio frequency power amplifier with power protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115395903A true CN115395903A (en) | 2022-11-25 |
Family
ID=84120423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202211004403.4A Pending CN115395903A (en) | 2022-08-22 | 2022-08-22 | Self-biased radio frequency power amplifier with power protection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115395903A (en) |
-
2022
- 2022-08-22 CN CN202211004403.4A patent/CN115395903A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7589589B2 (en) | Power amplifying apparatus and mobile communication terminal | |
| US7688133B2 (en) | Power amplifier | |
| WO2021169250A1 (en) | Radio frequency power amplifier circuit and gain control method | |
| CN100521509C (en) | Gain changeable amplifier | |
| US8134409B2 (en) | Radio frequency power amplifier | |
| JPH07154169A (en) | High frequency power amplifier | |
| US6819180B2 (en) | Radio frequency power amplifier adaptive bias control circuit | |
| US20230006619A1 (en) | Compensation circuit | |
| US11431306B2 (en) | Compensation circuit for amplitude modulation-amplitude modulation of radio frequency power amplifier | |
| US20040095192A1 (en) | Radio frequency power amplifier adaptive bias control circuit | |
| CN113422583A (en) | Low-noise amplification circuit, radio frequency front-end module and control method | |
| CN109450395B (en) | Nonlinear feedback circuit and low noise amplifier using same | |
| JP2009225342A (en) | Variable-gain low noise amplifier | |
| CN115395903A (en) | Self-biased radio frequency power amplifier with power protection | |
| US11463060B2 (en) | Power amplifier circuit | |
| WO2021056881A1 (en) | Compensation circuit for amplitude modulation to amplitude modulation of a radio frequency power amplifier | |
| CN110719077B (en) | Power amplifier and electronic equipment | |
| CN111106823B (en) | Millimeter wave on-off keying modulator with high isolation and stable input matching | |
| US10879847B2 (en) | Transmission unit | |
| CN111262534A (en) | Self-adaptive bias circuit for power amplifier chip | |
| US11894815B2 (en) | Power amplifier and electronic device | |
| CN116346107B (en) | HBT-based radio frequency switch | |
| CN211791445U (en) | Self-adaptive bias circuit for power amplifier chip | |
| JP2007243872A (en) | Transistor circuit and high-frequency amplifier using the same | |
| CN104734647A (en) | Amplifier system and device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |