CN220440676U - Low-noise distributed amplifier and circuit - Google Patents
Low-noise distributed amplifier and circuit Download PDFInfo
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- CN220440676U CN220440676U CN202322031699.5U CN202322031699U CN220440676U CN 220440676 U CN220440676 U CN 220440676U CN 202322031699 U CN202322031699 U CN 202322031699U CN 220440676 U CN220440676 U CN 220440676U
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Abstract
The utility model discloses a low-noise distributed amplifier and a circuit, wherein the amplifier comprises a conventional distributed structure and a low-noise load structure; the low noise load structure is connected to the input transmission line terminal of the conventional distributed structure, serves as a terminal load of the input equivalent transmission line, and provides reference bias for the radio frequency amplifier. The low-noise load structure is a current mirror structure; the input impedance of the current mirror structure is equal to the impedance of the distributed input stage termination sink load. The structure can greatly reduce the noise coefficient below 2GHz under the condition of not affecting other radio frequency indexes of the low-noise distributed amplifier, so that the noise coefficient of the low-frequency end of the distributed amplifier is less than 1.5dB.
Description
Technical Field
The utility model belongs to the technical field of amplifiers, and particularly relates to a low-noise distributed amplifier and a circuit.
Background
The distributed amplifier is also called a traveling wave amplifier, and is mainly characterized by good gain flatness, ultra-wide frequency and better input/output echo coefficient, as shown in fig. 1, which is a schematic block diagram of a typical distributed amplifier, an input signal enters the amplifier from a Zs port, in the signal transmission process, each section Lg and an input capacitor of an amplifying unit such as a field effect tube or a reference tube core form an equivalent transmission line structure with extremely high cut-off frequency, and the characteristic impedance is similar to an ideal transmission line, so that impedance matching in a full frequency band is realized; meanwhile, the method is superior to the method that the output port adopts a transmission line with the same transmission phase to lead out signals, so that the amplified signals of each section of periodic structure can realize in-phase superposition in ultra-wideband, and therefore, the total gain of the amplifier is the sum of the gains of all stages of parallel amplifiers.
The transmission lines of the input stage and the output stage comprise an input capacitor, an output capacitor, an input resistor and an output resistor of a field effect transistor or a reference tube core, and a special transmission line is formed. The FET or reference die becomes part of the special transmission line because part of parasitic parameters are not the limiting factor of gain bandwidth of the amplifier, so that the structure can eliminate the influence of the parasitic, and realize extremely high cut-off frequency of the amplifier. The S-parameter curve of a typical distributed low noise amplifier is shown in fig. 2 and the noise figure is shown in fig. 3.
The prior art has the following disadvantages:
the input end of the conventional distributed low-noise amplifier uses a termination load to absorb the redundant signal transmitted forward, so that the noise coefficient is generally higher, especially in a frequency band with lower frequency, the equivalent impedance of the rightmost segment Lg is lower and lower, and the influence of the load impedance Lg on the noise coefficient is larger, as shown in fig. 3, the noise coefficient is necessarily more than 3dB below 2 Ghz.
Disclosure of Invention
The utility model aims to overcome the defects in the prior art and provides a low-noise distributed amplifier and a circuit, which can effectively reduce noise.
In order to achieve the above purpose, the utility model is realized by adopting the following technical scheme:
in a first aspect, the present utility model provides a low noise distributed amplifier comprising a conventional distributed architecture and a low noise load architecture;
the low noise load structure is connected to the input transmission line terminal of the conventional distributed structure as a termination load of the input equivalent transmission line while providing a reference bias for the radio frequency amplifier.
The effects set above: the low-noise load structure is connected to the input end of the conventional distributed structure, and is used as a structure for replacing the terminal load impedance of the input end, so that the noise coefficient of the distributed amplifier at the low frequency end is smaller than 1.5dB under the condition that other radio frequency indexes of the low-noise distributed amplifier are not affected.
Further, the low noise load structure is a current mirror structure;
the input impedance Zin of the current mirror structure is equal to the impedance of the distributed input stage termination sink load.
Further, the current mirror structure includes:
supply voltage Vdd: for providing an operating voltage;
reference resistance r_ref: one end of the resistor r_ref is connected with the grid of the field effect transistor, and the other end of the resistor r_ref is connected with the drain of the field effect transistor and is used for providing relatively stable reference current;
reference die m_ref: the circuit is used for providing a current loop and generating a reference grid voltage Vg; the output end of the reference tube core M_ref is connected with the grid electrode of the amplifier;
bias resistor r_bias: one end of the resistor r_bias is connected with a power supply, the other end of the resistor r_bias is connected with a drain electrode of the field effect transistor, and the field effect source electrode is grounded.
The effects set above: the reference die M _ ref output is connected to the gate of the amplifier, since the gate voltage is the same, the current of the amplifier is proportional to the reference current of the current mirror.
Further, the resistance value of the resistor R_bias is larger than the equivalent resistance value of the resistor R_ref and the reference die M_ref;
the effects set above: the structure of m_ref and r_ref can be used as an equivalent resistor, which is generally much smaller than r_bias, so that the current of the circuit is mainly related to VDD and r_bias, and is greatly affected by the parameters of the field effect transistor.
Further, the supply voltage of the current mirror structure is directly introduced from Vdd at the output terminal.
In a second aspect, the utility model provides a circuit comprising a low noise distributed amplifier as described in the first aspect.
Compared with the prior art, the utility model has the beneficial effects that:
1. the radio frequency three-port device is used as a terminal load of the grid transmission line, and is not a passive resistor used in the prior art, so that the structure of the application has lower noise below 2 GHz;
the low-noise load structure can greatly reduce the noise coefficient below 2GHz under the condition of not affecting other radio frequency indexes of the low-noise distributed amplifier, so that the noise coefficient of the low-frequency end of the distributed amplifier is smaller than 1.5dB.
2. The three-port device with the current mirror structure as the terminal load of the input end equivalent transmission line provides reference bias for the radio frequency amplifier at the same time, and the input end terminal load and the current mirror are combined into a whole.
Drawings
FIG. 1 is a schematic diagram of a distributed low noise amplifier;
FIG. 2 is an S-parameter curve of a typical distributed low noise amplifier;
FIG. 3 is a NF curve of a typical distributed low noise amplifier;
FIG. 4 is a simplified current mirror structure;
FIG. 5 is a block diagram of the present patent;
FIG. 6 is a graph of noise figure (circles are typical noise figures of the original structure) for an implementation of the present patent;
fig. 7 is an S-parameter curve for the distributed low noise amplifier of the present patent.
In the figure: vdd: a power supply voltage; lbias: a choke inductance; zload: a terminal load; zs: a source impedance; zg: gate termination load Cbias: dc blocking capacitance Ld/2: drain transmission line Lg/2: gate transmission line m 1..mn: each stage of die Zd of the distributed amplifier: drain termination load resistor r_ref: a reference resistor; r_bias: a bias resistor; m_ref: a reference die; zin: an input impedance; vg: and (3) grid bias voltage.
Detailed Description
The utility model is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present utility model, and are not intended to limit the scope of the present utility model.
In the description of the present embodiment, it should be noted that, if terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like are presented, the indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, only for convenience of describing the present embodiment and simplifying the description, and does not indicate or imply that the indicated apparatus or element must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present embodiment.
Embodiment one:
the present embodiment provides that the present patent replaces the terminating load impedance of the input with other low noise structures based on the existing low noise amplifier, and that the low noise structure providing the desired impedance in the full frequency band can work. An example of a specific implementation is given below:
the typical structure of a current mirror is shown in fig. 4, which is often used to provide gate bias to an amplifier, and the structure of m_ref and r_ref can act as an equivalent resistance, which is typically much smaller than r_bias, so that the current of the circuit is mainly related to VDD and r_bias, and is greatly affected by the parameters of the field effect transistor. And the Vg is connected with the grid electrode of the amplifier, and because the grid voltages are the same, the current of the amplifier is proportional to the reference current of the current mirror and is not influenced by the change of the process parameters, so that the consistency of the performance of the amplifier is realized.
In order to solve the problem of low-frequency noise of the distributed low-noise amplifier, the input impedance Zin of the current mirror is equal to the impedance of the absorption load of the terminal of the distributed input stage by adjusting the parameters of the current mirror, and the port is an input port of the field effect transistor, so that the noise coefficient of the low-frequency noise amplifier is far lower than the resistance Lg. Meanwhile, the supply voltage of the current mirror can be directly introduced from Vdd at the output terminal. The complete circuit structure is shown in fig. 5.
Through the above analysis of the working mechanism of the present patent, the simulation results of fig. 6 and 7 below are obtained in electromagnetic simulation software according to the present patent. It can be seen that the NF coefficient of low frequency is greatly optimized, the noise coefficient below 2GHz is reduced from more than 3dB to less than 1.5dB, and the performance index of the S parameter is not influenced.
Fig. 6 is a noise figure curve (circles are typical noise figures of the original structure) of the implementation of the present patent.
Fig. 7 is an S-parameter curve for the distributed low noise amplifier of the present patent.
The implementation principle is as follows:
1. the structure of the application has lower noise below 2GHz by using the radio frequency three-port device as the terminal load of the grid transmission line instead of the passive resistor used in the prior art.
2. The three-port device (current mirror structure) as the termination of the input equivalent transmission line simultaneously provides the reference bias for the radio frequency amplifier, integrating the input termination with the current mirror.
Current mirrors are a widely used single HIC design technique in which a circuit is designed in such a way that current through one active device is copied to another active device having a current control function. In this case, the current flowing through one device may be copied into the other device, but in inverted form.
If the current of the first device changes, the mirrored current output of the other device also changes. Thus, by controlling the current in one device, the current in the other device can also be controlled. Therefore, the current mirror circuit is generally called a current control current source, and is called CCCS for short. Current mirror circuits have many major and minor dependencies, which is a major concern for characterizing current mirror circuits.
One suitable current mirror circuit can be characterized by three specifications, specifically as follows:
1. a current transmission rate; the current mirror circuit mirrors or copies the input current of one active device to the output of the other active device. The ideal current mirror circuit is an ideal current amplifier having an inverted configuration in which the current direction can be reversed. Thus, for an ideal current amplifier, the current transfer ratio is an important parameter.
2. An ac output resistor; according to ohm's law, the resistor has a voltage-current relationship. Therefore, the ac output resistor plays an important role in the stability of the output current with respect to the voltage variation.
3. Voltage drop; a mirror circuit that works properly has a low voltage drop at the output. The range of voltages in which the current mirror circuit can operate is referred to as the compliance range, and the minimum to maximum voltages supported in this compliance range are referred to as the compliance voltages. Keeping the transistor in active mode requires a minimum voltage, which is therefore dependent on the transistor specifications.
Embodiment two:
the present embodiment provides a circuit comprising the low noise distributed amplifier of embodiment one.
In specific work, by adjusting parameters of the current mirror, the input impedance Zin of the current mirror is equal to the impedance of the absorption load of the terminal of the distributed input stage, and the Zin port is an input port of the field effect transistor, so that the input impedance Zin has a noise coefficient far lower than the Lg resistance even in a low frequency range.
Specifically, adjusting the component parameters of the current mirror includes:
r_ref: reference resistance value;
r_bias: a bias resistor resistance value;
m_ref: reference is made to die size.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature, and in the description of the utility model, "a plurality" means two or more, unless otherwise specifically and clearly defined.
In the present utility model, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present utility model, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Although embodiments of the present utility model have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the utility model, and that variations, modifications, alternatives, and variations may be made in the above embodiments by those skilled in the art without departing from the spirit and principles of the utility model.
Claims (6)
1. A low noise distributed amplifier comprising a distributed architecture and a low noise load architecture;
the low-noise load structure is connected to the input transmission line terminal of the distributed structure, is used as the terminal load of the input equivalent transmission line, and provides reference bias for the radio frequency amplifier.
2. The low noise distributed amplifier of claim 1, wherein the low noise load structure is a current mirror structure;
the input impedance of the current mirror structure is equal to the impedance of the distributed input stage termination sink load.
3. The low noise distributed amplifier of claim 2, wherein the current mirror structure comprises:
supply voltage Vdd: for providing an operating voltage;
reference resistance r_ref: one end of the resistor r_ref is connected with the grid of the field effect transistor, and the other end of the resistor r_ref is connected with the drain of the field effect transistor and is used for providing relatively stable reference current;
reference die m_ref: the circuit is used for providing a current loop and generating a reference grid voltage Vg; the output end of the reference tube core M_ref is connected with the grid electrode of the amplifier;
bias resistor r_bias: one end of the resistor r_bias is connected with a power supply, the other end of the resistor r_bias is connected with a drain electrode of the field effect transistor, and the field effect source electrode is grounded.
4. The low noise distributed amplifier of claim 1, wherein the resistance value of resistor r_bias is greater than the equivalent resistance value of resistor r_ref and reference die m_ref.
5. The low noise distributed amplifier of claim 1, wherein the supply voltage of the current mirror structure is introduced directly from Vdd at the output.
6. A circuit comprising a low noise distributed amplifier as claimed in any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322031699.5U CN220440676U (en) | 2023-07-31 | 2023-07-31 | Low-noise distributed amplifier and circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322031699.5U CN220440676U (en) | 2023-07-31 | 2023-07-31 | Low-noise distributed amplifier and circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220440676U true CN220440676U (en) | 2024-02-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322031699.5U Active CN220440676U (en) | 2023-07-31 | 2023-07-31 | Low-noise distributed amplifier and circuit |
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| CN (1) | CN220440676U (en) |
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- 2023-07-31 CN CN202322031699.5U patent/CN220440676U/en active Active
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