CN116344604A - 绝缘栅双极型晶体管 - Google Patents

绝缘栅双极型晶体管 Download PDF

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CN116344604A
CN116344604A CN202111587888.XA CN202111587888A CN116344604A CN 116344604 A CN116344604 A CN 116344604A CN 202111587888 A CN202111587888 A CN 202111587888A CN 116344604 A CN116344604 A CN 116344604A
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nitride layer
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侯信铭
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United Microelectronics Corp
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Abstract

本发明公开一种绝缘栅双极型晶体管，其包含一P型III‑V族氮化物层，一N型III‑V族氮化物层接触P型III‑V族氮化物层的一侧，一高电子迁移率晶体管设置在N型III‑V族氮化物层上，高电子迁移率晶体管包含一第一III‑V族氮化物层和一第二III‑V族氮化物层，第一III‑V族氮化物层设置在N型III‑V族氮化物层上，第二III‑V族氮化物层设置在第一III‑V族氮化物层上，一源极埋入于第二III‑V族氮化物层和第一III‑V族氮化物层中，其中源极包含一N型III‑V族氮化物主体和一金属结，一漏极接触P型III‑V族氮化物层的另一侧以及一栅极设置在第二III‑V族氮化物层上。

Description

绝缘栅双极型晶体管
技术领域
本发明涉及一种绝缘栅双极晶体管结构，特别是涉及一种利用高电子迁移率晶体管(high electron mobility transistor)和异质结双载流子晶体管(heterojunctionbipolar transistor)所组成的绝缘栅双极晶体管结构。
背景技术
绝缘栅双极晶体管(IGBT)是目前业界经常使用到的功率晶体管，其结合了金属氧化物半导体场效晶体管(metal-oxide-semiconductor field effect transistor，MOSFET)的绝缘栅结构及双极结晶体管(bipolar junction transistor，BJT)的导通特性，因此具有高输出电流及高输入阻抗的双重优点，其特点为高效率及切换速度快，为改善功率级BJT运作的工作状况而诞生。近年来随着对于半导体元件效能不断提高的需求，需要再进一步提升绝缘栅双极晶体管的切换速度以及耐压性，以增加能源效率。
发明内容
有鉴于此，本发明提供一种利用高电子迁移率晶体管和异质结双载流子晶体管所组成的绝缘栅双极晶体管结构，以达成上述要求。
根据本发明第一优选实施例，一种绝缘栅双极型晶体管包含一P型III-V族氮化物层，一N型III-V族氮化物层接触P型III-V族氮化物层的一侧，一高电子迁移率晶体管设置在N型III-V族氮化物层上，高电子迁移率晶体管包含一第一III-V族氮化物层和一第二III-V族氮化物层，第一III-V族氮化物层设置在N型III-V族氮化物层上，第二III-V族氮化物层设置在第一III-V族氮化物层上，一源极埋入第二III-V族氮化物层和第一III-V族氮化物层中，其中源极包含一N型III-V族氮化物主体和一金属结，一漏极接触P型III-V族氮化物层的另一侧以及一栅极设置在第二III-V族氮化物层上。
根据本发明的第二优选实施例，一种绝缘栅双极型晶体管包含一P型III-V族氮化物层，一N型III-V族氮化物层接触P型III-V族氮化物层的一侧，一高电子迁移率晶体管设置在N型III-V族氮化物层上，高电子迁移率晶体管包含一第一III-V族氮化物层和一第二III-V族氮化物层，第一III-V族氮化物层设置在N型III-V族氮化物层上，第二III-V族氮化物层设置在第一III-V族氮化物层上，一源极埋入第二III-V族氮化物层和第一III-V族氮化物层中，其中源极完全由金属构成，一漏极接触P型III-V族氮化物层的另一侧以及一栅极设置在第二III-V族氮化物层上。
为让本发明的上述目的、特征及优点能更明显易懂，下文特举优选实施方式，并配合所附的附图，作详细说明如下。然而如下的优选实施方式与附图仅供参考与说明用，并非用来对本发明加以限制者。
附图说明
图1为本发明的第一优选实施例所绘示的绝缘栅双极型晶体管的示意图；
图2为本发明的第二优选实施例所绘示的绝缘栅双极型晶体管的示意图；
图3为本发明的第三优选实施例所绘示的绝缘栅双极型晶体管的示意图；
图4为本发明的第四优选实施例所绘示的绝缘栅双极型晶体管的示意图；
图5为第一优选实施例中绝缘栅双极型晶体管的制作方法的示意图。
主要元件符号说明
10:P型III-V族氮化物层
10a:一侧
10b:另一侧
12:N型III-V族氮化物层
14:第一III-V族氮化物层
16:第二III-V族氮化物层
18:量子局限沟道
20:未掺杂III-V族氮化物层
22:III-V族氮化物上盖层
24:保护层
26:氮化镓层
28:基底
30:缓冲层
D:漏极
G:栅极
H1:高电子迁移率晶体管
H2:高电子迁移率晶体管
M:源极
S:源极
S1:N型III-V族氮化物主体
S2:金属结
T1:绝缘栅双极型晶体管
T2:绝缘栅双极型晶体管
T3:绝缘栅双极型晶体管
T4:绝缘栅双极型晶体管
具体实施方式
图1为根据本发明的第一优选实施例所绘示的绝缘栅双极型晶体管。
如图1所示，一种绝缘栅双极型晶体管T1包含一P型III-V族氮化物层10，一N型III-V族氮化物层12接触P型III-V族氮化物层10的一侧10a，一高电子迁移率晶体管H1设置在N型III-V族氮化物层12上，高电子迁移率晶体管H1包含一第一III-V族氮化物层14，第一III-V族氮化物层14设置在N型III-V族氮化物层12上，一第二III-V族氮化物层16设置在第一III-V族氮化物层14上，一量子局限沟道18设置在第一III-V族氮化物层14和第二III-V族氮化物层16之间，量子局限沟道18接触第一III-V族氮化物层14，一未掺杂III-V族氮化物层20接触量子局限沟道18并且位于量子局限沟道18上方，一III-V族氮化物上盖层22覆盖第二III-V族氮化物层16。也就是说第一III-V族氮化物层14、量子局限沟道18、未掺杂III-V族氮化物层20、第二III-V族氮化物层16和III-V族氮化物上盖层22，由下至上依序堆叠。二维电子气形成在量子局限沟道18中。
一源极S埋入第二III-V族氮化物层16和第一III-V族氮化物层14中，详细来说，源极S穿透III-V族氮化物上盖层22、第二III-V族氮化物层16、未掺杂III-V族氮化物层20、量子局限沟道18并且接触第一III-V族氮化物层14，此外源极S包含一N型III-V族氮化物主体S1和一金属结S2，一漏极D接触P型III-V族氮化物层10的另一侧10b，也就是说漏极D和源极S分别在P型III-V族氮化物层10的相对两侧。一栅极G设置在第二III-V族氮化物层16上，栅极G接触III-V族氮化物上盖层22。一保护层24覆盖III-V族氮化物上盖层22和源极S。
P型III-V族氮化物层10包含InmGa1-mN，其中m≤1，N型III-V族氮化物层12包含InnGa1-nN，其中n≤1，第一III-V族氮化物层14包含P型GaN，第二III-V族氮化物层16包含N型AlyGa1-yN，其中y<1，根据本发明的优选实施例，第二III-V族氮化物层16的y值是由下往上减少，也就是说，越靠近未掺杂III-V族氮化物层20的y值越大，例如，接触未掺杂III-V族氮化物层20的第二III-V族氮化物层16的y值为0.9，此位置的第二III-V族氮化物层16为Al0.9Ga0.1N并且接触III-V族氮化物上盖层22的第二III-V族氮化物层16的y值为0.25，此位置的第二III-V族氮化物层16则为Al0.25Ga0.75N。
量子局限沟道18包含未掺杂InqGa1-qN，其中q≤1，未掺杂III-V族氮化物层20包含AlzGa1-zN，其中z≤1，根据本发明的优选实施例，未掺杂III-V族氮化物层20为AlN，III-V族氮化物上盖层22较佳为GaN。源极S中的N型III-V族氮化物主体S1较佳为InrGa1-rN，其中r≤1。另外，N型III-V族氮化物层12中的掺质包含IV族元素，P型III-V族氮化物层10中的掺质包含II族元素，第二III-V族氮化物层16中的N型掺质包含IV族元素，IV族元素包含C、Si、Ge，在本实施例中N型掺质较佳为Si；II族元素包含Mg、Ca、Sr，在本实施例中P型掺质较佳为Mg。
源极S中的金属结S2、漏极D和栅极G可以分别包括金属导电材料或其他掺杂的半导体材料，上述的金属导电材料可包括Au、W、Co、Ni、Ti、Mo、Cu、Al、Ta、Pd以及上述材料的化合物、复合层或合金。
此外，源极S作为高电子迁移率晶体管H1的源极S，但是也同时当作绝缘栅双极型晶体管T1的射极(emitter)；漏极D作为高电子迁移率晶体管H1的漏极D，但是也同时当作绝缘栅双极型晶体管T1的集极(collector)。
绝缘栅双极型晶体管T1中由源极S的N型III-V族氮化物主体S1、第一III-V族氮化物层14和N型III-V族氮化物层12构成一NPN晶体管，由第一III-V族氮化物层14、N型III-V族氮化物层12和P型III-V族氮化物层10构成一PNP晶体管，在第一优选实施例中NPN晶体管PNP晶体管都是异质结。值得注意的是：第一III-V族氮化物层14中的P型掺质用来调整高电子迁移率晶体管H1的临界电压以及NPN晶体管的基极(base)和射极之间的电压。一般而言会将第一III-V族氮化物层14中的P型掺质的浓度调整成让高电子迁移率晶体管H1成为常关型的型式，因此在本实施例中的高电子迁移率晶体管H1较佳为常关型的N型高电子迁移率晶体管。
图2为根据本发明的第二优选实施例所绘示的绝缘栅双极型晶体管，其中具有相同功能和位置的元件，将使用第一优选实施例中的元件标号，并且具有和第一优选实施例中相同元件标号的元件将不再赘述其功能和材料。
请同时参阅图1和图2，第二优选实施例的绝缘栅双极型晶体管T2和第一优选实施例的绝缘栅双极型晶体管T1的差别在于：绝缘栅双极型晶体管T2的源极M完全由金属构成，其它元件的位置和材料都和第一优选实施例相同。源极M可以包括Au、W、Co、Ni、Ti、Mo、Cu、Al、Ta、Pd以及上述材料的化合物、复合层或合金。
图3为根据本发明的第三优选实施例所绘示的绝缘栅双极型晶体管，其中具有相同功能和位置的元件，将使用第一优选实施例中的元件标号，并且具有和第一优选实施例中相同元件标号的元件将不再赘述其功能和材料。
第三优选实施例所绘示的绝缘栅双极型晶体管和第一优选实施例所绘示的绝缘栅双极型晶体管的差别在于高电子迁移率晶体管的结构。如图3所示，高电子迁移率晶体管H2包含一第一III-V族氮化物层14，一氮化镓层26设置在第一III-V族氮化物层14上，一第二III-V族氮化物层16设置在氮化镓层26上，一III-V族氮化物上盖层22覆盖第二III-V族氮化物层16，也就是说，第一III-V族氮化物层14、氮化镓层26、第二III-V族氮化物层16和III-V族氮化物上盖层22由下至上堆叠，第一III-V族氮化物层14接触氮化镓层26，氮化镓层26接触第二III-V族氮化物层16，第二III-V族氮化物层16接触III-V族氮化物上盖层22，二维电子气形成在氮化镓层26中。源极S埋入在III-V族氮化物上盖层22、第二III-V族氮化物层16、氮化镓层26、第一III-V族氮化物层14中，源极S和第一优选实施例中的源极S相同，都是由N型III-V族氮化物主体S1和金属结S2组成。其它元件的位置都和第一优选实施例相同。
图4为根据本发明的第四优选实施例所绘示的绝缘栅双极型晶体管，其中具有相同功能和位置的元件，将使用第三优选实施例中的元件标号，并且具有和第三优选实施例中相同元件标号的元件将不再赘述其功能和材料。
请同时参阅图3和图4，第三优选实施例的绝缘栅双极型晶体管T3和第四优选实施例的绝缘栅双极型晶体管T4的差别在于：绝缘栅双极型晶体管T4的源极M完全由金属构成，其它元件的位置和材料都和第三优选实施例相同。源极M可以包括Au、W、Co、Ni、Ti、Mo、Cu、Al、Ta、Pd以及上述材料的化合物、复合层或合金。
图5和图1所绘示的是第一优选实施例中绝缘栅双极型晶体管的制作方法，其中具有相同功能和位置的元件，将使用第一优选实施例中的元件标号，并且具有和第一优选实施例中相同元件标号的元件将不再赘述其功能和材料。
如图5所示，绝缘栅双极型晶体管的制作方式可以包含提供基底28，接着形成缓冲层30覆盖基底28，然后形成P型III-V族氮化物层10，接着在P型III-V族氮化物层10的一侧10a上依序形成N型III-V族氮化物层12、第一III-V族氮化物层14、量子局限沟道18、未掺杂III-V族氮化物层20、第二III-V族氮化物层16和III-V族氮化物上盖层22，之后形成源极S，接着形成保护层24，然后形成栅极G，接续如图1所示，去除基底28和缓冲层30曝露出P型III-V族氮化物层10的另一侧10b，最后在P型III-V族氮化物层10的另一侧10b上形成漏极D，至此完成绝缘栅双极型晶体管T1。
此外第二优选实施例中的绝缘栅双极型晶体管T2、第三优选实施例中的绝缘栅双极型晶体管T3、第四优选实施例中的绝缘栅双极型晶体管T4都可以采用上述的制作工艺方式，在第二优选实施例中只要更换源极材料即可，在第三优选实施例中只要将第一优选实施例中的量子局限沟道18和未掺杂III-V族氮化物层20改成氮化镓层26即可，在第四优选实施例中只要将第三优选实施例中的源极材料改成金属即可。
本发明利用高电子迁移率晶体管增加绝缘栅双极型晶体管的开关速度并且提升绝缘栅双极型晶体管的击穿电压，此外利用NPN晶体管和PNP晶体管提升电流量，因此本发明的绝缘栅双极型晶体管具有低导通电阻(on-resistance)、可承受大电流、可耐高压、高切换速度等的优点，相较于传统使用MOSFET的绝缘栅双极型晶体管，本发明的绝缘栅双极型晶体管的导通电阻为传统型绝缘栅双极型晶体管的二十分之一至十分之一。此外由于本发明的绝缘栅双极型晶体管为垂直型的晶体管，相较于水平型的晶体管，本发明的绝缘栅双极型晶体管可节省元件面积。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (16)

1.一种绝缘栅双极型晶体管，包含：
P型III-V族氮化物层；
N型III-V族氮化物层，接触该P型III-V族氮化物层的一侧；
高电子迁移率晶体管，设置在该N型III-V族氮化物层上，其中该高电子迁移率晶体管包含：
第一III-V族氮化物层，该第一III-V族氮化物层设置在该N型III-V族氮化物层上；
第二III-V族氮化物层，设置在该第一III-V族氮化物层上；
源极，埋入该第二III-V族氮化物层和该第一III-V族氮化物层中，其中该源极包含N型III-V族氮化物主体和金属结；
漏极，接触该P型III-V族氮化物层的另一侧；以及
栅极，设置在该第二III-V族氮化物层上。
2.如权利要求1所述的绝缘栅双极型晶体管，其中该P型III-V族氮化物层包含InmGa1- mN，其中m≤1。
3.如权利要求1所述的绝缘栅双极型晶体管，其中该N型III-V族氮化物层包含InnGa1- nN，其中n≤1。
4.如权利要求1所述的绝缘栅双极型晶体管，另包含氮化镓层，设置在该第一III-V族氮化物层上，其中该第一III-V族氮化物层包含GaN，该第二III-V族氮化物层包含AlxGa1- xN，其中x<1，二维电子气形成在该氮化镓层中。
5.如权利要求1所述的绝缘栅双极型晶体管，其中该第二III-V族氮化物层包含N型掺质。
6.如权利要求1所述的绝缘栅双极型晶体管，其中该第一III-V族氮化物层包含P型GaN，该第二III-V族氮化物层包含N型AlyGa1-yN，其中y<1。
7.如权利要求6所述的绝缘栅双极型晶体管，另包含：
量子局限沟道，设置在该第一III-V族氮化物层和该第二III-V族氮化物层之间，该量子局限沟道包含未掺杂InqGa1-qN，其中q≤1；
未掺杂III-V族氮化物层，接触该量子局限沟道并且位于该量子局限沟道上方；以及
III-V族氮化物上盖层，覆盖该第二III-V族氮化物层。
8.如权利要求1所述的绝缘栅双极型晶体管，其中该N型III-V族氮化物层中的掺质包含IV族元素，该P型III-V族氮化物层中的掺质包含II族元素。
9.一种绝缘栅双极型晶体管，包含：
P型III-V族氮化物层；
N型III-V族氮化物层，接触该P型III-V族氮化物层的一侧；
高电子迁移率晶体管，设置在该N型III-V族氮化物层上，其中该高电子迁移率晶体管包含：
第一III-V族氮化物层，该第一III-V族氮化物层设置在该N型III-V族氮化物层上；
第二III-V族氮化物层，设置在该第一III-V族氮化物层上；
源极，埋入该第二III-V族氮化物层和该第一III-V族氮化物层中，其中该源极完全由金属构成；
漏极，接触该P型III-V族氮化物层的另一侧；以及
栅极，设置在该第二III-V族氮化物层上。
10.如权利要求9所述的绝缘栅双极型晶体管，其中该P型III-V族氮化物层包含InmGa1- mN，其中m≤1。
11.如权利要求9所述的绝缘栅双极型晶体管，其中该N型III-V族氮化物层包含InnGa1- nN，其中n≤1。
12.如权利要求9所述的绝缘栅双极型晶体管，另包含氮化镓层，设置在该第一III-V族氮化物层上，其中该第一III-V族氮化物层包含GaN，该第二III-V族氮化物层包含AlxGa1- xN，其中x<1，二维电子气形成在该氮化镓层中。
13.如权利要求9所述的绝缘栅双极型晶体管，其中该第二III-V族氮化物层包含N型掺质。
14.如权利要求9所述的绝缘栅双极型晶体管，其中该第一III-V族氮化物层包含P型GaN，该第二III-V族氮化物层包含N型AlyGa1-yN，其中y<1。
15.如权利要求14所述的绝缘栅双极型晶体管，另包含：
量子局限沟道，设置在该第一III-V族氮化物层和该第二III-V族氮化物层之间，该量子局限沟道包含未掺杂InqGa1-qN，其中q≤1；
未掺杂III-V族氮化物层，接触该量子局限沟道并且位于该量子局限沟道上方；以及
III-V族氮化物上盖层，覆盖该第二III-V族氮化物层。
16.如权利要求9所述的绝缘栅双极型晶体管，其中该N型III-V族氮化物层中的掺质包含IV族元素，该P型III-V族氮化物层中的掺质包含II族元素。
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