CN116334746A - Growth system for high quality nitride single crystal with reduced temperature field - Google Patents

Growth system for high quality nitride single crystal with reduced temperature field Download PDF

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Publication number
CN116334746A
CN116334746A CN202111576280.7A CN202111576280A CN116334746A CN 116334746 A CN116334746 A CN 116334746A CN 202111576280 A CN202111576280 A CN 202111576280A CN 116334746 A CN116334746 A CN 116334746A
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heating
growth
heating mechanism
single crystal
nitride single
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司志伟
刘宗亮
徐科
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a growth system of high-quality nitride single crystals with reduced temperature fields. The growth system includes: a flux method nitride single crystal growth apparatus and a lifting mechanism, the flux method nitride single crystal growth apparatus comprising a growth chamber in which a nitride single crystal can be grown, and a reaction vessel, a first heating mechanism and a second heating mechanism disposed in the growth chamber, the first heating mechanism being at least used for forming a first temperature zone in a first region inside the reaction vessel, the second heating mechanism being at least used for forming a second temperature zone in a second region inside the reaction vessel; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism. According to the growth system provided by the embodiment of the invention, the temperature field is reduced along with the reduction of the melt, so that the continuous high-speed growth of the nitride single crystal can be ensured, and the quality uniformity of the nitride single crystal is better.

Description

Growth system for high quality nitride single crystal with reduced temperature field
Technical Field
The invention relates to a nitride single crystal growth system, in particular to a high-quality nitride single crystal growth system with a reduced temperature field, belonging to the technical field of semiconductor single crystal growth equipment.
Background
Gallium nitride is used as one of the third-generation semiconductor core materials, and has the excellent characteristics of large forbidden bandwidth, high saturated electron mobility, high breakdown field strength, high thermal conductivity, small dielectric constant, strong radiation resistance, good chemical stability and the like. Gallium nitride has found wide application in both optical devices and high power electronics, such as Light Emitting Diodes (LEDs), laser Diodes (LDs), and high power transistors. At present, four methods for producing gallium nitride are mainly available, namely a high-pressure melt method, a hydride vapor phase epitaxy method, an ammonothermal method and a fluxing agent method. However, the high pressure melt method, the hydride vapor phase epitaxy method, the ammonothermal method and the flux method. The flux method has a plurality of advantages as a growth method in a near thermodynamic equilibrium state, and is one of the internationally accepted growth methods for obtaining low-cost, high-quality and large-size gallium nitride single crystals at present.
In general, the general growth process of a gallium nitride single crystal by the flux method is as follows: selecting proper raw materials (mainly gallium, sodium metal, carbon additives and the like) in proportion, placing a crucible filled with growth raw materials and gallium nitride seed crystals in a growth furnace, and obtaining gallium nitride single crystals with certain thickness on the gallium nitride seed crystals by liquid phase epitaxy under nitrogen atmosphere with certain growth temperature and certain growth pressure and by controlling different growth time; however, during growth, the growth melt level, i.e., the gas and melt interface, drops with it. The temperature gradient of the high temperature region and the low temperature region of gallium nitride growth is continuously reduced along with the consumption of raw materials in the growth process, the growth temperature controlled region of the high temperature region is changed, and the solubility of a nitrogen source is reduced, so that the mass transfer and transportation process of the nitrogen source under the action of the temperature gradient/solubility gradient in the growth process is limited, and in addition, the quality of the grown gallium nitride is uneven due to uneven distribution of a temperature field of gallium nitride growth, so that the industrialization of fluxing agent gallium nitride is seriously affected. In the prior art, a crucible descent method is used for controlling the temperature gradient, but the method inevitably generates mechanical vibration in the growth raw materials in the moving process, thereby generating interference on the growth of gallium nitride and leading to poor uniformity of the quality of the grown gallium nitride single crystal.
Disclosure of Invention
The invention mainly aims to provide a growth system of high-quality nitride single crystals with reduced temperature fields, which overcomes the defects in the prior art.
In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a growth system of high-quality nitride single crystals with reduced temperature field, which comprises the following components: a fluxing agent method nitride single crystal growth device and a lifting mechanism, wherein the fluxing agent method nitride single crystal growth device comprises a growth chamber for nitride single crystal growth, a reaction container, a first heating mechanism and a second heating mechanism which are arranged in the growth chamber,
the reaction vessel is at least used for bearing seed crystals and/or substrates required by nitride single crystal growth and growth raw materials required by nitride single crystal growth, the first heating mechanism and the second heating mechanism are matched with the reaction vessel, the first heating mechanism is at least used for forming a first temperature zone in a first area inside the reaction vessel, and the second heating mechanism is at least used for forming a second temperature zone in a second area inside the reaction vessel; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism and is at least used for driving at least one of the first heating mechanism and the second heating mechanism to lift along a designated direction, wherein the designated direction is the direction in which the liquid level of the growth raw material in a molten state falls.
Compared with the prior art, the invention has the advantages that:
1) The growth system of the high-quality nitride single crystal with reduced temperature field provided by the embodiment of the invention has the advantages of simple structure, simple and convenient use, operation and maintenance, low preparation and modification cost and convenient popularization and application.
2) According to the high-quality nitride single crystal growth system with the reduced temperature field, provided by the embodiment of the invention, the temperature field is controlled to be reduced along with the reduction of the melt, so that the solubility of a nitrogen source in a high-temperature area in a reaction container is always kept at a higher level, and the solubility of the nitrogen source in a low-temperature area is always kept at a relatively low state, so that active nitrogen sources in a growth raw material in the reaction container can be promoted to maintain high-speed mass transfer, continuous high-speed growth of the nitride single crystal can be ensured, and the quality uniformity of the nitride single crystal is better;
3) The growth system of the high-quality nitride single crystal with reduced temperature field provided by the embodiment of the invention can effectively realize the homogenization of the thermal field in the growth cavity and further improve the quality uniformity of the nitride single crystal.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a temperature field reduced high quality nitride single crystal growth system provided in an exemplary embodiment of the present invention;
fig. 2 is a schematic diagram showing the structure of a growth system of a high-quality nitride single crystal with a reduced temperature field according to still another exemplary embodiment of the present invention.
Detailed Description
In view of the shortcomings in the prior art, the inventor of the present invention has long studied and practiced in a large number of ways to propose the technical scheme of the present invention. The technical scheme, the implementation process, the principle and the like are further explained as follows.
According to the high-quality nitride single crystal growth system with the reduced temperature field, the temperature field (which can be simply called as the temperature field) can be reduced along with the reduction of the liquid level of the growth raw material, so that the solubility of a high Wen Oudan source is always kept at a higher level, and the solubility of a nitrogen source in a low-temperature region is kept in a relatively low state, so that the mass transfer of the nitrogen source can be kept, the growth of the nitride single crystal can be continuously carried out at a high speed in growth equipment, and the quality uniformity of the nitride single crystal obtained by the growth is better.
The embodiment of the invention provides a growth system of high-quality nitride single crystals with reduced temperature field, which comprises the following components: a fluxing agent method nitride single crystal growth device and a lifting mechanism, wherein the fluxing agent method nitride single crystal growth device comprises a growth chamber for nitride single crystal growth, a reaction container, a first heating mechanism and a second heating mechanism which are arranged in the growth chamber,
the reaction vessel is at least used for bearing seed crystals and/or substrates required by nitride single crystal growth and growth raw materials required by nitride single crystal growth, the first heating mechanism and the second heating mechanism are matched with the reaction vessel, the first heating mechanism is at least used for forming a first temperature zone in a first area inside the reaction vessel, and the second heating mechanism is at least used for forming a second temperature zone in a second area inside the reaction vessel; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism and is at least used for driving at least one of the first heating mechanism and the second heating mechanism to lift along a designated direction, wherein the designated direction is the direction in which the liquid level of the growth raw material in a molten state falls.
In a specific embodiment, the first heating mechanism is disposed at a first horizontal position, the second heating mechanism is disposed at a second horizontal position, and the first heating mechanism and the second heating mechanism can be driven by the lifting mechanism to change the horizontal position of the first heating mechanism and the second heating mechanism, but the first horizontal position is always higher than the second horizontal position, and the temperature of the first temperature zone is higher than the temperature of the second temperature zone.
In a specific embodiment, the first heating mechanism comprises a first heating body which is arranged continuously, and the first heating body is an annular structure arranged around the reaction container.
In a specific embodiment, the first heating mechanism includes a plurality of first heating bodies disposed at intervals, and a plurality of first heating bodies are disposed around the reaction container, where a plurality of second heating bodies are disposed independently from each other, or a plurality of first heating bodies are sequentially connected in series.
In a specific embodiment, the second heating mechanism comprises a continuously arranged second heating body, and the second heating body is of an annular structure arranged around the reaction container.
In a specific embodiment, the second heating mechanism includes a plurality of second heating bodies disposed at intervals, and a plurality of second heating bodies are disposed around the reaction container, where a plurality of first heating bodies are disposed independently from each other, or a plurality of second heating bodies are sequentially connected in series.
In a specific embodiment, the first heating element and the second heating element each comprise a resistance wire.
In a specific embodiment, the growth system further comprises a first rotation driving mechanism, wherein the first rotation driving mechanism is in transmission connection with the first heating mechanism and/or the second heating mechanism and is at least used for driving the first heating mechanism and/or the second heating mechanism to rotate or self-rotate around the reaction container.
In one embodiment, the flux-process nitride single crystal growth apparatus includes a thermal container in which the growth chamber is formed, and the thermal container is further in transmission connection with a second rotation driving mechanism and is capable of self-rotation under the drive of the second rotation driving mechanism.
In a specific embodiment, the growth system further comprises a nitrogen gas supply mechanism, wherein the nitrogen gas supply mechanism is communicated with the growth chamber and is at least used for introducing nitrogen gas into the growth chamber.
The technical scheme, implementation process and principle of the present invention will be further explained with reference to the accompanying drawings and specific embodiments, and unless otherwise specified, each component or mechanism included in the embodiments of the present invention may be obtained by commercial purchase, and it should be understood that the embodiments of the present invention mainly describe and explain the structure of a growing system of high quality nitride single crystals with reduced temperature field provided by the present invention, and are not limited herein by the material, size, etc. of each component included therein.
Example 1
Referring to fig. 1, a growing system of high quality nitride single crystal with reduced temperature field includes a flux method nitride single crystal growing apparatus and a lifting mechanism (not shown), the flux method nitride single crystal growing apparatus includes a thermal insulation container 100, a reaction container 200, a first heating mechanism 300 and a second heating mechanism 400, a growing chamber 110 for growing nitride single crystal is provided in the thermal insulation container 100, the reaction container 200, the first heating mechanism 300 and the second heating mechanism 400 are disposed in the growing chamber 110, the first heating mechanism 300 and the second heating mechanism 400 are respectively and independently matched with the reaction container 300, and the first heating mechanism 300 is in transmission connection with the lifting mechanism and can do linear motion along a predetermined direction, wherein the predetermined direction is a falling direction of a liquid surface of a growth raw material in a molten state in the reaction container 200, and is generally an axial direction of the reaction container 200.
In this embodiment, the reaction vessel 200 is at least used for carrying a seed crystal and/or a substrate 210 required for growing a nitride single crystal and a growth raw material 220 required for growing a nitride single crystal, the growth raw material 220 is in a molten state, the first heating mechanism 300 is at least used for forming a first temperature zone in a first region inside the reaction vessel 300, the second heating mechanism 400 is at least used for forming a second temperature zone in a second region inside the reaction vessel 300, wherein the first region is located above the second region along an axis direction of the reaction vessel, i.e. closer to a liquid level side of the growth raw material in the molten state, it is understood that the first temperature zone and the second temperature zone are respectively formed by the first heating mechanism 300 and the second heating mechanism 400, and the temperatures of the first temperature zone and the second temperature zone are different, so that a temperature field for promoting the liquid phase epitaxial growth of the nitride crystal in the reaction vessel 300 is formed in the growth chamber 110, and the first heating mechanism 300 moves correspondingly when being driven by the first heating mechanism 300 to move in a predetermined direction, and the first heating mechanism moves correspondingly (mechanical movement is not understood).
In this embodiment, the temperature of the first temperature region corresponding to the first heating mechanism 300 is higher than the temperature of the second temperature region corresponding to the second heating mechanism 400, and the temperatures corresponding to the first region and the second region in the reaction vessel 200 are different, so that the solubility of the nitrogen sources in the growth raw materials in the first region and the second region in the reaction vessel are different, and the nitrogen sources in the growth raw materials in the reaction vessel can maintain high-speed mass transfer under the driving of concentration differences (concentration differences generated due to the different solubilities) due to the different solubilities of the nitrogen sources, so that the uniformity of the nitrogen sources in the growth raw materials is improved.
In this embodiment, the first heating mechanism 300 is disposed at a first horizontal position, and the second heating mechanism 400 is disposed at a second horizontal position, where the first heating mechanism 300 can be driven by the lifting mechanism to change its horizontal position, but the first horizontal position is always higher than the second horizontal position, and the temperature of the first temperature zone is always higher than the temperature of the second temperature zone.
In this embodiment, the first heating mechanism 300 includes a first heating element 310 that is continuously disposed, and the first heating element is an annular structure disposed around the reaction vessel 200, or the first heating mechanism 300 includes a plurality of first heating elements 310 disposed at intervals, and a plurality of first heating elements 310 are disposed around the reaction vessel 200, where a plurality of first heating elements 310 are disposed independently from each other, or a plurality of first heating elements 310 are sequentially connected in series.
In this embodiment, the second heating mechanism 400 includes a continuously disposed second heating element 410, and the second heating element 410 is a ring structure disposed around the reaction vessel 200, or the second heating mechanism 400 includes a plurality of second heating elements 410 disposed at intervals, and a plurality of second heating elements 410 are disposed around the reaction vessel 200, wherein the plurality of second heating elements 410 are disposed independently of each other, or the plurality of second heating elements 410 are sequentially connected in series.
It can be understood that when the first heating element and the second heating element are provided with one, the first heating element and the second heating element are preferably arranged in a circular ring structure, so that the heating surfaces are continuous and uniform, the temperature uniformity of the formed first temperature zone is better, and the nitride single crystal with better quality uniformity is more favorably grown; when the first heating element and the second heating element are provided in plurality, the first heating element and the second heating element may be annular structures sleeved on the outer periphery of the reaction container, and of course, the plurality of first heating elements and the plurality of second heating elements may be discontinuous in the circumferential direction of the reaction container, but preferably, the first heating element and the plurality of second heating elements are uniformly arranged at intervals (i.e. distributed at equal intervals) in the circumferential direction of the reaction container, and as such, the uniform distribution of the plurality of heating elements is more favorable for growing nitride single crystals with better quality uniformity.
In this embodiment, at least the first heating mechanism 300 is disposed in the growth chamber 110, but in view of the fact that the first heating mechanism 300 needs to move up and down along a predetermined direction, there is no fixed connection between the first heating mechanism 300 and the growth chamber 110, and the fixing of the position of the first heating mechanism can be achieved by an elevating mechanism.
In this embodiment, the first heating element 310 and the second heating element 410 may be resistance wires, etc., and of course, the power source required for heating the resistance wires may be obtained by an external power source, and the specific connection structure and implementation manner thereof are not limited herein, and may be implemented in a manner known to those skilled in the art.
In this embodiment, the temperature of the first temperature zone formed by the first heating mechanism may be greater than the temperature of the second temperature zone formed by the second heating mechanism, and the heating efficiency of the first heating mechanism may be greater than the heating efficiency of the second heating mechanism, for example, the current flowing into the first heating mechanism is greater, the heating area of the first heating mechanism is greater, the number of first heating bodies included in the first heating mechanism is greater, and the like, which is not particularly limited herein.
In this embodiment, in order to facilitate the driving engagement between the first heating mechanism 300 and the lifting mechanism, the moving component (e.g. the piston rod) of the lifting mechanism may be directly and fixedly connected to the first heating mechanism, or may be implemented by providing an adaptor bracket or an adaptor structure, which is not specifically limited herein, and may be implemented in a manner known to those skilled in the art, and it should be noted that, in fig. 1, the lifting direction 600 of the lifting mechanism is parallel to the axial direction of the reaction vessel 200.
It will be appreciated that the second heating mechanism 400 may be in driving connection with the lifting mechanism, but it is eventually ensured that the temperature field formed by the first heating mechanism and the second heating mechanism falls along with the falling of the liquid level of the growth raw material in the reaction vessel, and of course, the second heating mechanism may also be fixedly arranged, and the falling of the temperature field along with the falling of the liquid level of the growth raw material can be realized only by lifting the first heating mechanism.
In this embodiment, the lifting mechanism is preferably disposed outside the growth chamber 110, and may be a linear driving mechanism known to those skilled in the art, for example, the lifting mechanism may be a linear driving motor or a linear driving cylinder, etc., and the reaction vessel 200 may be a crucible, etc.
In this embodiment, the growth system further includes a nitrogen gas supply mechanism (not shown in the drawing), where the nitrogen gas supply mechanism is in communication with the growth chamber 110 and is at least used for introducing nitrogen gas into the growth chamber, and the conveying direction of the nitrogen gas is "500" in fig. 1, and the nitrogen gas is used as a nitrogen source for the liquid phase epitaxy growth of the nitride single crystal.
The growth process of the gallium nitride monocrystal by the flux method by using the growth system of the high-quality nitride monocrystal with reduced temperature field provided by the embodiment of the invention mainly comprises the following steps:
providing a temperature field reduced high quality nitride single crystal growth system as shown in fig. 1;
a heterogeneous substrate such as sapphire, siC and the like or an equivalent substrate such as HVPE gallium nitride seed crystal is adopted as a growth substrate and placed in a reaction container 200;
selecting proper growth raw material component proportions, wherein the growth raw materials mainly comprise gallium metal, sodium metal, carbon additives and the like, and the Na/Ga value in the growth raw materials is 2:1-10:1, placing the growth raw materials into a reaction container 200, placing the reaction container 200 into a growth chamber 110 with a first heating mechanism 300 and a second heating mechanism 400, connecting the first heating mechanism 300 with a lifting mechanism in a transmission way, and simultaneously introducing nitrogen into the growth chamber 110;
in the growth process of the gallium nitride single crystal, the first heating mechanism 300 is lowered along the lowering of the liquid level of the growth raw material in the reaction vessel 200, so that the mass transfer and transportation of the nitrogen source in the reaction vessel are maintained, the liquid phase epitaxial growth of the gallium nitride single crystal is continuously carried out, and the gallium nitride single crystal with uniform quality is obtained.
Example 2
Referring to fig. 1 and 2, the structure of a growing system for high-quality nitride single crystal with reduced temperature field in this embodiment is substantially the same as that of embodiment 1, and the same parts thereof will not be described in detail herein, and the growing system in this embodiment further includes a rotation driving mechanism (not shown in the drawings) in driving connection with the first heating mechanism 300 and/or the second heating mechanism 400, and configured to drive the first heating mechanism 300 and/or the second heating mechanism 400 to rotate around the reaction vessel 200 in a direction of "700" in fig. 2, thereby realizing thermal field homogenization inside the growth chamber 11, so as to be more beneficial for obtaining semiconductor crystals with uniform quality.
In this embodiment, it is preferable that the first heating mechanism 300 and the second heating mechanism 400 are rotated or rotated around the reaction vessel 200 synchronously or asynchronously, and the rotation driving mechanism for driving the first heating mechanism 300 and the second heating mechanism 400 to rotate or rotate may be the same or different.
In this embodiment, when only the first heating mechanism 300 is in transmission connection with the rotation driving mechanism, the first heating mechanism 300 is simultaneously in transmission connection with the rotation driving mechanism and the lifting mechanism, and it should be noted that the rotation driving mechanism and the lifting mechanism may be in transmission connection with the first heating mechanism via a coupling, which may be a spline coupling or the like, and it is understood that a connection structure for realizing independent and simultaneous linear motion and rotational motion of the driven mechanism by the coupling is a structure and a manner known to those skilled in the art, and specific connection structures and manners thereof are not specifically described and limited herein.
Of course, in order to avoid interaction of the moving parts of the lifting mechanism and the rotation driving mechanism with the thermal insulation container, an air bearing or other bearing structure may be disposed between the moving parts of the lifting mechanism and the rotation driving mechanism and the thermal insulation container to eliminate the motion effect therebetween, and the cooperation of the disposed air bearing or other bearing structure with the structures of the growth apparatus 10 and the like may be achieved in a manner known to those skilled in the art, which is not specifically defined and described herein.
In this embodiment, the rotation driving mechanism is preferably provided outside the growth chamber 110, wherein the rotation driving mechanism may be a rotary cylinder or a rotary motor, etc. known to those skilled in the art.
In this embodiment, by rotating or rotating the first heating mechanism and/or the second heating mechanism 400 relative to the reaction container 200, the uniformity of the temperature field in the growth chamber 110 is significantly improved, and disturbance of the growth conditions is avoided, so that the crystallization quality of the semiconductor such as gallium nitride can be improved.
According to the high-quality nitride single crystal growth system with the reduced temperature field, provided by the embodiment of the invention, the temperature field is controlled to be reduced along with the reduction of the melt, so that the solubility of a nitrogen source in a high-temperature area in a reaction container is always kept at a higher level, and the solubility of the nitrogen source in a low-temperature area is always kept at a relatively low state, so that active nitrogen sources in a growth raw material in the reaction container can be promoted to maintain high-speed mass transfer, continuous high-speed growth of the nitride single crystal can be ensured, and the quality uniformity of the nitride single crystal is better; and the temperature field is controlled to control the temperature gradient to be in a higher growth state continuously, so that the problem of growth quality reduction of gallium nitride single crystals caused by mechanical disturbance of a growth system in the crucible descending process is avoided.
The growth system of the high-quality nitride single crystal with reduced temperature field provided by the embodiment of the invention can effectively realize the homogenization of the thermal field in the growth cavity and further improve the quality uniformity of the nitride single crystal; in addition, the growth system of the high-quality nitride single crystal with reduced temperature field provided by the embodiment of the invention has the advantages of simple structure, simplicity and convenience in use, operation and maintenance, low preparation and modification cost and convenience in popularization and application.
It should be understood that the above embodiments are merely for illustrating the technical concept and features of the present invention, and are intended to enable those skilled in the art to understand the present invention and implement the same according to the present invention without limiting the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.

Claims (10)

1. A system for growing a high quality nitride single crystal with a reduced temperature field, comprising: a fluxing agent method nitride single crystal growth device and a lifting mechanism, wherein the fluxing agent method nitride single crystal growth device comprises a growth chamber for nitride single crystal growth, a reaction container, a first heating mechanism and a second heating mechanism which are arranged in the growth chamber,
the reaction vessel is at least used for bearing seed crystals and/or substrates required by nitride single crystal growth and growth raw materials required by nitride single crystal growth, the first heating mechanism and the second heating mechanism are matched with the reaction vessel, the first heating mechanism is at least used for forming a first temperature zone in a first area inside the reaction vessel, and the second heating mechanism is at least used for forming a second temperature zone in a second area inside the reaction vessel; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism and is at least used for driving at least one of the first heating mechanism and the second heating mechanism to lift along a designated direction, wherein the designated direction is the direction in which the liquid level of the growth raw material in a molten state falls.
2. A growth system according to claim 1, wherein: the first heating mechanism is arranged at a first horizontal position, the second heating mechanism is arranged at a second horizontal position, the first heating mechanism and the second heating mechanism can be driven by the lifting mechanism to change the horizontal position of the first heating mechanism and the second heating mechanism, the first horizontal position is always higher than the second horizontal position, and the temperature of the first temperature zone is higher than the temperature of the second temperature zone.
3. A growth system according to claim 2, wherein: the first heating mechanism comprises a first heating body which is arranged continuously, and the first heating body is of an annular structure which is arranged around the reaction container.
4. A growth system according to claim 2, wherein: the first heating mechanism comprises a plurality of first heating bodies which are arranged at intervals, and a plurality of first heating bodies are arranged around the reaction container, wherein the plurality of first heating bodies are arranged independently of each other, or the plurality of first heating bodies are sequentially connected in series.
5. The growth system of claim 3 or 4, wherein: the second heating mechanism comprises a second heating body which is arranged continuously, and the second heating body is of an annular structure which is arranged around the reaction container.
6. The growth system of claim 3 or 4, wherein: the second heating mechanism comprises a plurality of second heating bodies arranged at intervals, a plurality of second heating bodies are arranged around the reaction container, wherein the second heating bodies are arranged independently of each other, or the second heating bodies are sequentially connected in series.
7. The growth system of claim 6, wherein: the first heating body and the second heating body both comprise resistance wires.
8. The growth system of claim 1, further comprising a first rotational drive mechanism drivingly coupled to the first heating mechanism and/or the second heating mechanism and configured to at least drive the first heating mechanism and/or the second heating mechanism to rotate or self-rotate about the reaction vessel.
9. A growth system according to claim 1, wherein: the fluxing agent method nitride single crystal growth equipment comprises a heat preservation container, wherein a growth cavity is formed in the heat preservation container, and the heat preservation container is also in transmission connection with a second rotary driving mechanism and can automatically rotate under the driving of the second rotary driving mechanism.
10. The growth system of claim 1, further comprising a nitrogen supply mechanism in communication with the growth chamber and configured to at least introduce nitrogen into the growth chamber.
CN202111576280.7A 2021-12-22 2021-12-22 Growth system for high quality nitride single crystal with reduced temperature field Pending CN116334746A (en)

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