CN216378478U - High-quality nitride single crystal growth system with reduced temperature field - Google Patents
High-quality nitride single crystal growth system with reduced temperature field Download PDFInfo
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Abstract
The utility model discloses a growth system of high-quality nitride single crystals with reduced temperature field. The growing system comprises: the device comprises a flux method nitride single crystal growth device and a lifting mechanism, wherein the flux method nitride single crystal growth device comprises a growth chamber for growing nitride single crystals, a reaction container arranged in the growth chamber, a first heating mechanism and a second heating mechanism, the first heating mechanism is at least used for forming a first temperature zone in a first area inside the reaction container, and the second heating mechanism is at least used for forming a second temperature zone in a second area inside the reaction container; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism. According to the growth system provided by the embodiment of the utility model, the temperature field is reduced along with the reduction of the melt, so that the continuous high-speed growth of the nitride single crystal can be ensured, and the quality uniformity of the nitride single crystal is better.
Description
Technical Field
The utility model relates to a nitride single crystal growth system, in particular to a high-quality nitride single crystal growth system with a reduced temperature field, and belongs to the technical field of semiconductor single crystal growth equipment.
Background
Gallium nitride is one of the third-generation semiconductor core materials, and has the excellent characteristics of large forbidden band width, high saturated electron mobility, high breakdown field strength, high thermal conductivity, small dielectric constant, strong radiation resistance, good chemical stability and the like. Gallium nitride has found widespread use in optical devices and high power electronic devices, such as Light Emitting Diodes (LEDs), Laser Diodes (LDs), and high power transistors. At present, the methods for producing gallium nitride mainly comprise four methods, namely a high-pressure liquid-phase method, a hydride gas-phase epitaxy method, an ammonothermal method and a fluxing agent method. However, the high-pressure melt method, the hydride vapor phase epitaxy method, the ammonothermal method, and the flux method. The flux method has many advantages as a growth method under a near thermodynamic equilibrium state, and is one of the internationally recognized growth methods for obtaining a gallium nitride single crystal with low cost, high quality and large size.
In general, the general growth process of a bulk single crystal of gallium nitride by flux method is: selecting proper raw materials (mainly comprising gallium metal, sodium metal, carbon additive and the like) in a component ratio, placing a crucible filled with growth raw materials and gallium nitride seed crystals in a growth furnace, and carrying out liquid phase epitaxy on the gallium nitride seed crystals to obtain gallium nitride single crystals with a certain thickness by controlling different growth times under the nitrogen atmosphere with a certain growth temperature and a certain growth pressure; however, during the growth process, the surface level of the growing melt, i.e., the interface between the gas and the melt, is lowered. The temperature gradients of a high-temperature area and a low-temperature area of the growth of the gallium nitride are continuously reduced along with the consumption of raw materials in the growth process, the area controlled by the growth temperature of the high-temperature area is changed, and the solubility of a nitrogen source is reduced, so that the mass transfer and transportation process of the nitrogen source under the action of the temperature gradient/solubility gradient in the growth process is limited, in addition, the quality of the grown gallium nitride is not uniform due to uneven distribution of the temperature field of the growth of the gallium nitride, and the industrialization of the gallium nitride serving as a fluxing agent is seriously influenced. In the prior art, a temperature gradient is controlled by using a Bridgman method, but the method inevitably generates mechanical vibration in growth raw materials in the moving process, so that interference is generated on the growth of gallium nitride, and the quality uniformity of the grown gallium nitride single crystal is poor.
SUMMERY OF THE UTILITY MODEL
The main object of the present invention is to provide a system for growing a high quality nitride single crystal with reduced temperature field to overcome the disadvantages of the prior art.
In order to achieve the purpose of the utility model, the technical scheme adopted by the utility model comprises the following steps:
the embodiment of the utility model provides a growth system of high-quality nitride single crystals with reduced temperature fields, which comprises: a flux-method nitride single crystal growth apparatus including a growth chamber in which a nitride single crystal can be grown, and a reaction vessel, a first heating mechanism and a second heating mechanism which are provided in the growth chamber,
the reaction vessel is at least used for bearing seed crystals and/or substrates required by nitride single crystal growth and growth raw materials required by nitride single crystal growth, the first heating mechanism and the second heating mechanism are matched with the reaction vessel, the first heating mechanism is at least used for forming a first temperature zone in a first area inside the reaction vessel, and the second heating mechanism is at least used for forming a second temperature zone in a second area inside the reaction vessel; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism and is at least used for driving at least one of the first heating mechanism and the second heating mechanism to lift along a specified direction, wherein the specified direction is a direction in which the liquid level of the molten growth raw material descends.
Compared with the prior art, the utility model has the advantages that:
1) the growth system of the high-quality nitride single crystal with the reduced temperature field, provided by the embodiment of the utility model, has the advantages of simple structure, convenience in use, operation and maintenance, low preparation and modification cost and convenience in popularization and application.
2) According to the growth system of the high-quality nitride single crystal with the reduced temperature field, which is provided by the embodiment of the utility model, the temperature field is controlled to be reduced along with the reduction of the molten liquid, so that the solubility of a nitrogen source in a high-temperature region in a reaction container is always kept at a higher level, and the solubility of the nitrogen source in a low-temperature region is always kept at a relatively low state, so that the nitrogen source in a growth raw material in the reaction container can be promoted to keep high-speed mass transfer and transportation, the continuous high-speed growth of the nitride single crystal can be ensured, and the quality uniformity of the nitride single crystal is better;
3) the high-quality nitride single crystal growth system with the reduced temperature field provided by the embodiment of the utility model can effectively realize the homogenization of the thermal field in the growth chamber and further improve the quality uniformity of the nitride single crystal.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural view of a system for growing a high-quality nitride single crystal with reduced temperature field according to an exemplary embodiment of the present invention;
fig. 2 is a schematic structural view of still another high-quality nitride single crystal growth system with reduced temperature field according to an exemplary embodiment of the present invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
The growth system of the high-quality nitride single crystal with the reduced temperature field provided by the embodiment of the utility model can reduce the temperature field (which can be simply called as the temperature field) along with the reduction of the liquid level of the growth raw material, so that the solubility of the nitrogen source in the high-temperature region is always kept at a higher level, and the solubility of the nitrogen source in the low-temperature region is kept at a relatively low state, so that the mass transfer transportation of the nitrogen source can be kept, the growth of the nitride single crystal can be continuously carried out in the growth equipment at a high speed, and the quality uniformity of the grown nitride single crystal is better.
The embodiment of the utility model provides a growth system of high-quality nitride single crystals with reduced temperature fields, which comprises: a flux-method nitride single crystal growth apparatus including a growth chamber in which a nitride single crystal can be grown, and a reaction vessel, a first heating mechanism and a second heating mechanism which are provided in the growth chamber,
the reaction vessel is at least used for bearing seed crystals and/or substrates required by nitride single crystal growth and growth raw materials required by nitride single crystal growth, the first heating mechanism and the second heating mechanism are matched with the reaction vessel, the first heating mechanism is at least used for forming a first temperature zone in a first area inside the reaction vessel, and the second heating mechanism is at least used for forming a second temperature zone in a second area inside the reaction vessel; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism and is at least used for driving at least one of the first heating mechanism and the second heating mechanism to lift along a specified direction, wherein the specified direction is a direction in which the liquid level of the molten growth raw material descends.
In a specific embodiment, the first heating mechanism is disposed at a first horizontal position, and the second heating mechanism is disposed at a second horizontal position, wherein the first heating mechanism and the second heating mechanism can change their horizontal positions under the driving of the lifting mechanism, but the first horizontal position is always higher than the second horizontal position, and the temperature of the first temperature zone is higher than the temperature of the second temperature zone.
In a specific embodiment, the first heating mechanism comprises a first heating body which is continuously arranged, and the first heating body is an annular structure arranged around the reaction vessel.
In a specific embodiment, the first heating mechanism includes a plurality of first heaters disposed at intervals, and the plurality of first heaters are disposed around the reaction container, wherein the plurality of second heaters are disposed independently of each other, or the plurality of first heaters are sequentially connected in series.
In a specific embodiment, the second heating mechanism includes a second heating element disposed in series, and the second heating element is an annular structure disposed around the reaction vessel.
In a specific embodiment, the second heating mechanism includes a plurality of second heating elements disposed at intervals, and the plurality of second heating elements are disposed around the reaction container, wherein the plurality of first heating elements are disposed independently of each other, or the plurality of second heating elements are sequentially connected in series.
In a specific embodiment, the first heating element and the second heating element each include a resistance wire.
In a specific embodiment, the growth system further comprises a first rotation driving mechanism, and the first rotation driving mechanism is in transmission connection with the first heating mechanism and/or the second heating mechanism and at least used for driving the first heating mechanism and/or the second heating mechanism to rotate around the reaction vessel or to rotate by itself.
In a specific embodiment, the nitride single crystal growth apparatus by the flux method comprises a heat preservation container, wherein the growth chamber is formed in the heat preservation container, and the heat preservation container is also in transmission connection with a second rotation driving mechanism and can rotate automatically under the driving of the second rotation driving mechanism.
In a specific embodiment, the growth system further comprises a nitrogen gas supply mechanism, wherein the nitrogen gas supply mechanism is communicated with the growth chamber and at least used for introducing nitrogen gas into the growth chamber.
As will be described in more detail with reference to the accompanying drawings and specific embodiments, unless otherwise specified, all the components or mechanisms included in the embodiments of the present invention are commercially available, and it should be understood that the embodiments of the present invention mainly describe and explain the structure of a high quality nitride single crystal growth system with reduced temperature field provided by the present invention, and the material, size, and the like of each component included therein are not limited herein.
Example 1
Referring to fig. 1, a system for growing a high-quality nitride single crystal with reduced thermal field includes a flux-method nitride single crystal growing apparatus and a lifting mechanism (not shown in the figure), the flux-method nitride single crystal growing apparatus includes a thermal container 100, a reaction container 200, a first heating mechanism 300 and a second heating mechanism 400, the thermal container 100 has a growth chamber 110 for growing a nitride single crystal therein, the reaction container 200, the first heating mechanism 300 and the second heating mechanism 400 are disposed in the growth chamber 110, the first heating mechanism 300 and the second heating mechanism 400 are respectively and independently engaged with the reaction container 300, the first heating mechanism 300 is in transmission connection with the lifting mechanism and can make a linear motion along a predetermined direction, wherein the predetermined direction is a descending direction of a liquid level of a molten growth raw material in the reaction container 200, generally in the axial direction of the reaction vessel 200.
In this embodiment, the reaction vessel 200 is at least used for carrying the seed crystal and/or the substrate 210 required for the growth of the nitride single crystal and the growth raw material 220 required for the growth of the nitride single crystal, the growth raw material 220 is in a molten state, the first heating mechanism 300 is at least used for forming a first temperature zone in a first area inside the reaction vessel 300, and the second heating mechanism 400 is at least used for forming a second temperature zone in a second area inside the reaction vessel 300, wherein the first area is located above the second area along the axial direction of the reaction vessel, i.e. closer to the liquid level side of the growth raw material in the molten state, it can be understood that the first temperature zone and the second temperature zone formed by the first heating mechanism 300 and the second heating mechanism 400 respectively are based on the first temperature zone and the second temperature zone, and the temperatures of the first temperature zone and the second temperature zone are different, so that a temperature field for promoting the liquid phase epitaxial growth of the nitride crystal in the reaction vessel 300 is formed in the growth chamber 110 When the first heating mechanism 300 is driven by the lifting mechanism to move in a predetermined direction, correspondingly, the temperature field also moves correspondingly with the movement of the first heating mechanism 300 (it is understood that the movement is not a movement of a mechanical structure).
In this embodiment, the temperature of the first temperature zone corresponding to the first heating mechanism 300 is higher than the temperature of the second temperature zone corresponding to the second heating mechanism 400, and since the temperatures corresponding to the first region and the second region in the reaction vessel 200 are different, the solubilities of the nitrogen source in the growth raw materials of the first region and the second region in the reaction vessel are different, and since the solubilities of the nitrogen source are different, the nitrogen source in the growth raw materials in the reaction vessel can maintain high-speed mass transfer driven by the concentration difference (concentration difference caused by different solubilities), thereby improving the uniformity of the nitrogen source in the growth raw materials.
In this embodiment, the first heating mechanism 300 is disposed at a first horizontal position, and the second heating mechanism 400 is disposed at a second horizontal position, wherein the first heating mechanism 300 can change its own horizontal position under the driving of the lifting mechanism, but the first horizontal position is always higher than the second horizontal position, and the temperature of the first temperature zone is always higher than the temperature of the second temperature zone.
In this embodiment, the first heating mechanism 300 includes a first heating element 310 that is continuously disposed and has a ring structure disposed around the reaction vessel 200, or the first heating mechanism 300 includes a plurality of first heating elements 310 that are disposed at intervals and are disposed around the reaction vessel 200, wherein the plurality of first heating elements 310 are disposed independently from each other, or the plurality of first heating elements 310 are sequentially connected in series.
In this embodiment, the second heating mechanism 400 includes the second heat-generating body 410 that sets up in succession, the second heat-generating body 410 is for encircleing the loop configuration that reaction vessel 200 set up, or, the second heating mechanism 400 includes the second heat-generating body 410 that a plurality of intervals set up, and is a plurality of the second heat-generating body 410 sets up with encircleing reaction vessel 200, wherein, a plurality of the second heat-generating body 410 sets up independently each other, or, a plurality of the second heat-generating body 410 establishes ties in proper order.
It can be understood that, when one first heating element and one second heating element are arranged, the first heating element and the second heating element are preferably arranged in a circular ring structure, so that the heating surfaces are continuous and uniform, the temperature uniformity of the formed first temperature area is better, and the nitride single crystal with better quality uniformity is more favorably grown; and when first heat-generating body and second heat-generating body were provided with a plurality ofly, first heat-generating body and second heat-generating body also can be the cover establish the ring shape structure in reaction vessel periphery, certainly, it is a plurality of first heat-generating body and a plurality of the second heat-generating body can be discontinuous in reaction vessel's circumferential direction, but preferably makes a plurality of first heat-generating body and a plurality of the second heat-generating body sets up (i.e. equidistant distribution) at even interval in reaction vessel's circumference, and equally, a plurality of heat-generating body evenly distributed is more favorable to growing and is obtained the better nitride single crystal of quality homogeneity.
In this embodiment, at least the first heating mechanism 300 is disposed in the growth chamber 110, but since the first heating mechanism 300 needs to move up and down along a predetermined direction, there is no fixed connection between the first heating mechanism 300 and the growth chamber 110, and the position of the first heating mechanism can be fixed by the lifting mechanism.
In this embodiment, the first heating element 310 and the second heating element 410 may be resistance wires, etc., and certainly, the power required for heating the resistance wires may be obtained by an external power supply, and the specific connection structure and implementation manner thereof are not limited herein, which may be implemented by a manner known to those skilled in the art.
In this embodiment, the temperature of the first temperature zone formed by the first heating mechanism is higher than the temperature of the second temperature zone formed by the second heating mechanism, which may be realized by making the heating efficiency of the first heating mechanism higher than the heating efficiency of the second heating mechanism, for example, the current passed into the first heating mechanism is larger, the heating area of the first heating mechanism is larger, the number of the first heating bodies included in the first heating mechanism is larger, and the like, and is not limited specifically herein.
In this embodiment, in order to facilitate the driving cooperation between the first heating mechanism 300 and the lifting mechanism, a moving component (e.g., a piston rod) of the lifting mechanism may be directly and fixedly connected to the first heating mechanism, or may be implemented by providing a transfer bracket or a transfer structure, which is not specifically limited herein, and may be implemented in a manner known to those skilled in the art, and it should be noted that the lifting direction 600 of the lifting mechanism in fig. 1 is parallel to the axial direction of the reaction vessel 200.
It is understood that the second heating mechanism 400 can be drivingly connected to the elevating mechanism, but it is finally ensured that the temperature field formed by the first heating mechanism and the second heating mechanism is lowered along with the lowering of the liquid level of the growth raw material in the reaction vessel, and of course, the second heating mechanism can be fixedly arranged, and the lowering of the temperature field along with the lowering of the liquid level of the growth raw material can be realized only by the raising and lowering of the first heating mechanism.
In this embodiment, the elevating mechanism is preferably disposed outside the growth chamber 110, and the elevating mechanism may be a linear driving mechanism known to those skilled in the art, for example, the elevating mechanism may be a linear driving motor or a linear driving cylinder, etc., and the reaction vessel 200 may be a crucible, etc.
In this embodiment, the growth system further includes a nitrogen gas supply mechanism (not shown in the figure), which is in communication with the growth chamber 110 and at least used for introducing nitrogen gas into the growth chamber, wherein the nitrogen gas is delivered in the direction of "500" in fig. 1, and the nitrogen gas is used as a nitrogen source for liquid phase epitaxial growth of nitride single crystals.
The growth process of the gallium nitride single crystal by the flux method by using the growth system of the high-quality nitride single crystal with reduced temperature field provided by the embodiment of the utility model mainly comprises the following steps:
providing a system for growing a high quality nitride single crystal with reduced temperature field as shown in FIG. 1;
adopting a heterogeneous substrate such as sapphire, SiC and the like or a homogeneous substrate such as HVPE gallium nitride seed crystal and the like as a growth substrate and placing the growth substrate in the reaction vessel 200;
selecting a proper growth raw material component ratio, wherein the growth raw materials mainly comprise gallium metal, sodium metal, carbon additives and the like, and the Na/Ga value in the growth raw materials is 2: 1-10: 1, placing the growth raw material into a reaction vessel 200, placing the reaction vessel 200 into a growth chamber 110 with a first heating mechanism 300 and a second heating mechanism 400, enabling the first heating mechanism 300 to be in transmission connection with a lifting mechanism, and simultaneously introducing nitrogen into the growth chamber 110;
and (2) carrying out liquid phase epitaxial growth of the gallium nitride single crystal under the conditions of 800 ℃, 3-5MPa and nitrogen atmosphere, and in the growth process of the gallium nitride single crystal, making the first heating mechanism 300 descend along the descending of the liquid level of the growth raw material in the reaction container 200 so as to keep the mass transfer of the nitrogen source in the reaction container, so as to continuously carry out the liquid phase epitaxial growth of the gallium nitride single crystal and further obtain the gallium nitride single crystal with uniform quality.
Example 2
Referring to fig. 1 and fig. 2, the structural composition of the high-quality nitride single crystal growth system with reduced temperature field in this embodiment is substantially the same as that in embodiment 1, and the same structural parts thereof are not described again, and the growth system in this embodiment further includes a rotation driving mechanism (not shown in the figure), which is in transmission connection with the first heating mechanism 300 and/or the second heating mechanism 400 and is used for driving the first heating mechanism 300 and/or the second heating mechanism 400 to rotate around the reaction vessel 200, where the rotation direction is as "700" in fig. 2, so as to achieve thermal field homogenization inside the growth chamber 11, and thus, it is more beneficial to obtain a semiconductor crystal with uniform quality.
In this embodiment, it is preferable that both the first heating mechanism 300 and the second heating mechanism 400 can rotate or rotate around the reaction vessel 200 synchronously or asynchronously, and the rotation driving mechanism for driving the first heating mechanism 300 and the second heating mechanism 400 to rotate or rotate can be the same or different.
In this embodiment, when only the first heating mechanism 300 is in transmission connection with the rotary driving mechanism, the first heating mechanism 300 is in transmission connection with the rotary driving mechanism and the lifting mechanism at the same time, it should be noted that the rotary driving mechanism and the lifting mechanism may be in transmission connection with the first heating mechanism through a coupling, which may be a spline coupling, and the like, and it can be understood that the connection structure that realizes independent and simultaneous linear motion and rotary motion of the driven mechanism through the coupling is a structure and a manner known to those skilled in the art, and specific connection structure and manner thereof are not specifically described and limited herein.
Of course, in order to avoid the mutual influence between the moving parts of the lifting mechanism and the rotary driving mechanism and the thermal insulation container, an air bearing or other bearing structure may be arranged between the moving parts of the lifting mechanism and the rotary driving mechanism and the thermal insulation container to eliminate the influence of the movement between the moving parts of the lifting mechanism and the rotary driving mechanism and the thermal insulation container, and the cooperation between the arranged air bearing or other bearing structure and the growth device 10 and other structures may be realized in a manner known by those skilled in the art, and is not specifically limited and described herein.
In this embodiment, the rotation driving mechanism is preferably disposed outside the growth chamber 110, wherein the rotation driving mechanism may be a rotation cylinder or a rotation motor, etc. known to those skilled in the art.
In this embodiment, by rotating or rotating the first heating mechanism and/or the second heating mechanism 400 relative to the reaction vessel 200, the uniformity of the temperature field in the growth chamber 110 is significantly improved, and the disturbance of the growth conditions is avoided, so that the crystallization quality of semiconductors such as gallium nitride can be improved.
According to the growth system of the high-quality nitride single crystal with the reduced temperature field, which is provided by the embodiment of the utility model, the temperature field is controlled to be reduced along with the reduction of the molten liquid, so that the solubility of a nitrogen source in a high-temperature region in a reaction container is always kept at a higher level, and the solubility of the nitrogen source in a low-temperature region is always kept at a relatively low state, so that the nitrogen source in a growth raw material in the reaction container can be promoted to keep high-speed mass transfer and transportation, the continuous high-speed growth of the nitride single crystal can be ensured, and the quality uniformity of the nitride single crystal is better; and the temperature field is controlled to control the temperature gradient to be continuously in a higher growth state, so that the problem of reduction of the growth quality of the gallium nitride single crystal caused by mechanical disturbance of a growth system in the crucible descending process is solved.
The growth system of the high-quality nitride single crystal with the reduced temperature field, provided by the embodiment of the utility model, can effectively realize the homogenization of the thermal field in the growth chamber and further improve the quality uniformity of the nitride single crystal; in addition, the growth system of the high-quality nitride single crystal with the reduced temperature field, provided by the embodiment of the utility model, has the advantages of simple structure, convenience in use, operation and maintenance, low preparation and modification cost and convenience in popularization and application.
It should be understood that the above-mentioned embodiments are merely illustrative of the technical concepts and features of the present invention, which are intended to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and therefore, the protection scope of the present invention is not limited thereby. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A system for growing a high-quality nitride single crystal with reduced temperature field, comprising: a flux-method nitride single crystal growth apparatus including a growth chamber in which a nitride single crystal can be grown, and a reaction vessel, a first heating mechanism and a second heating mechanism which are provided in the growth chamber,
the reaction vessel is at least used for bearing seed crystals and/or substrates required by nitride single crystal growth and growth raw materials required by nitride single crystal growth, the first heating mechanism and the second heating mechanism are matched with the reaction vessel, the first heating mechanism is at least used for forming a first temperature zone in a first area inside the reaction vessel, and the second heating mechanism is at least used for forming a second temperature zone in a second area inside the reaction vessel; the lifting mechanism is in transmission connection with at least one of the first heating mechanism and the second heating mechanism and is at least used for driving at least one of the first heating mechanism and the second heating mechanism to lift along a specified direction, wherein the specified direction is a direction in which the liquid level of the molten growth raw material descends.
2. The growing system of claim 1, wherein: the first heating mechanism is arranged at a first horizontal position, the second heating mechanism is arranged at a second horizontal position, the first heating mechanism and the second heating mechanism can be driven by the lifting mechanism to change the horizontal positions of the first heating mechanism and the second heating mechanism, the first horizontal position is always higher than the second horizontal position, and the temperature of the first temperature zone is higher than that of the second temperature zone.
3. The growing system of claim 2, wherein: the first heating mechanism comprises a first heating body which is continuously arranged, and the first heating body is of an annular structure which is arranged around the reaction container.
4. The growing system of claim 2, wherein: the first heating mechanism comprises a plurality of first heating bodies arranged at intervals, the first heating bodies are arranged around the reaction container, and the first heating bodies are mutually independently arranged or are sequentially connected in series.
5. The growing system according to claim 3 or 4, wherein: the second heating mechanism comprises a second heating body which is continuously arranged, and the second heating body is of an annular structure which surrounds the reaction container.
6. The growing system according to claim 3 or 4, wherein: the second heating mechanism comprises a plurality of second heating bodies arranged at intervals, the second heating bodies are arranged around the reaction container, and the second heating bodies are arranged independently or sequentially in series.
7. The growing system of claim 6, wherein: the first heating body and the second heating body both comprise resistance wires.
8. The growing system according to claim 1, further comprising a first rotary driving mechanism, wherein the first rotary driving mechanism is in transmission connection with the first heating mechanism and/or the second heating mechanism and at least used for driving the first heating mechanism and/or the second heating mechanism to rotate around or self-rotate around the reaction vessel.
9. The growing system of claim 1, wherein: the equipment for growing the nitride single crystal by the fluxing agent method comprises a heat-insulating container, wherein the growth chamber is formed in the heat-insulating container, and the heat-insulating container is also in transmission connection with a second rotary driving mechanism and can rotate automatically under the driving of the second rotary driving mechanism.
10. The growth system of claim 1, further comprising a nitrogen gas supply mechanism in communication with the growth chamber and at least for introducing nitrogen gas into the growth chamber.
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