CN116314257A - GaN-based diode designed through bulk heat dissipation and preparation method thereof - Google Patents

GaN-based diode designed through bulk heat dissipation and preparation method thereof Download PDF

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CN116314257A
CN116314257A CN202310074647.8A CN202310074647A CN116314257A CN 116314257 A CN116314257 A CN 116314257A CN 202310074647 A CN202310074647 A CN 202310074647A CN 116314257 A CN116314257 A CN 116314257A
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gan
thickness
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汪福进
白俊春
程斌
贾永
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Jiangsu Xingang Semiconductor Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
    • H01L29/66204—Diodes
    • H01L29/66219—Diodes with a heterojunction, e.g. resonant tunneling diodes [RTD]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L29/861—Diodes
    • H01L29/88—Tunnel-effect diodes
    • H01L29/882—Resonant tunneling diodes, i.e. RTD, RTBD
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Abstract

The invention relates to a GaN-based diode designed through bulk heat dissipation and a preparation method thereof, wherein the preparation method comprises the following steps: 1. growing epitaxial materials; 2. manufacturing a deposition groove; 3. growing materials in the grooves; 4. grinding the surface material; 5. manufacturing a cathode; 6. and (5) manufacturing an anode. Which can effectively reduce n ‑ -equivalent resistance of GaN transport layer, thereby increasing forward current of the diode; meanwhile, the heat conducting material is filled between each two conductive units, so that the heat dissipation capacity of the diode can be improved.

Description

GaN-based diode designed through bulk heat dissipation and preparation method thereof
Technical Field
The invention belongs to the technical field of microelectronic devices, relates to a GaN-based diode and a preparation method thereof, and in particular relates to a GaN-based diode designed through bulk heat dissipation and a preparation method thereof.
Background
The silicon carbide (SiC) material and the gallium nitride (GaN) material which have the characteristics of higher breakdown electric field, higher saturated electron velocity, high electron density, high thermal conductivity, high mobility, small dielectric constant, good electric conduction performance and the like can bear higher energy density, so that higher reliability is realized. Therefore, the semiconductor device is increasingly popular and paid attention to by new generation semiconductors.
SiC has advanced earlier and has a somewhat higher technical maturity than GaN, but a great difference between the two is the difference in thermal conductivity, which makes SiC more useful in high power applications. At the same time, gaN can operate more rapidly due to its higher electron mobility, which results in a higher switching speed than SiC. Such outstanding properties, which allow gallium nitride to have a visible future in high frequency microwave device applications, are also expected to occupy a major position in future semiconductor material development. As such, gaN is of interest and preference to the future of more general public, and is given a prestige.
With the advent of the 5G age, the new material gallium nitride (GaN) will play an increasingly important role, and will come to the own age, thus achieving explosive growth. Therefore, the method is the next main angle of the semiconductor family, can not only play a role in military systems such as satellites, radars, communication, electronic warfare, underwater exploration and the like, but also play an unprecedented key role in unmanned aerial vehicles, unmanned equipment, intelligent weapons, new concept weapons and the like, and leads to great changes in the fields such as cross-range improvement of informatization combat level, military and the like.
However, with the progress of modern power electronics technology, the development of electrical products tends to be miniaturized and dense, and the power and heat dissipation requirements of electronic devices are also increased. If the heat emitted by the electronic device during operation cannot be timely led out, local high temperature is easily caused, the service life of the electronic device is influenced by light weight, and the working performance of the device is influenced by heavy weight.
However, the conventional GaN-based diode has a considerable limitation in miniaturization and application due to insufficient heat dissipation capability.
In view of the above-mentioned technical drawbacks of the prior art, there is a need to provide an improved GaN-based diode and a method for manufacturing the same, which overcome the above-mentioned drawbacks.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a GaN-based diode designed by bulk heat dissipation and a preparation method thereof, which can effectively reduce n - -equivalent resistance of GaN transport layer, thereby increasing forward current of the diode; meanwhile, the heat conducting material is filled between each two conductive units, so that the heat dissipation capacity of the diode can be improved.
In order to achieve the above object, the present invention provides the following technical solutions:
the preparation method of the GaN-based diode designed through bulk heat dissipation is characterized by comprising the following steps of:
1) In N + Growth of a layer of N on the front side of the GaN layer - -a GaN transport layer;
2) At the N + GaN layer and N - -etching grooves on the GaN transport layer, the grooves having a width of 4-10 μm and a depth of the grooves to be N + -etching away 100-500nm of the GaN layer;
3) Growing an AlGaN layer with the thickness of 10-30 nm on the whole;
4) Depositing a thermally conductive material on the AlGaN layer;
5) Polishing the heat conducting material, removing the heat conducting material above the AlGaN layer, only keeping the heat conducting material in the groove, and enabling the top surface of the rest heat conducting material to be flush with the top surface of the AlGaN layer;
6) At the N + -fabricating a cathode on the bottom surface of the GaN layer;
7) And manufacturing an anode on the heat conduction material and part of the AlGaN layer.
Preferably, the Al component of the AlGaN layer is 15% -40%.
Preferably, the AlGaN layer and the N - Two-dimensional electron gas is formed between the GaN layers in the vertical direction and two-dimensional electron gas is not formed in the horizontal direction.
Preferably, the heat conducting material is heat conducting silicone grease or phase change heat conducting paste.
Preferably, the cathode is formed by stacking a Ti layer, an Al layer, a Ni layer and an Au layer, wherein the thickness of the Ti layer is 20nm, the thickness of the Al layer is 160nm, the thickness of the Ni layer is 55nm, and the thickness of the Au layer is 45nm.
Preferably, after said step 5), a rapid annealing of the metal is performed, followed by a further step 6), said rapid annealing of the metal being performed at a temperature of 870 ℃ at N 2 The rapid thermal annealing was performed in an atmosphere for 30 seconds.
Preferably, the anode is formed by stacking a Ni layer and an Au layer, wherein the thickness of the Ni layer is 45nm, and the thickness of the Au layer is 200nm.
In addition, the invention also provides a GaN-based diode designed through bulk heat dissipation, which is characterized in that the GaN-based diode is prepared by the preparation method.
Compared with the prior art, the GaN-based diode designed through bulk heat dissipation and the preparation method thereof have one or more of the following beneficial technical effects:
1. in the GaN-based diode of the vertical AlGaN/GaN heterojunction designed through bulk heat dissipation, the regrown AlGaN layer is utilized to form the 2DEG in the vertical direction, so that N can be effectively reduced - The equivalent resistance of the GaN transport layer increases the forward current of the diode.
2. According to the GaN-based diode of the vertical AlGaN/GaN heterojunction designed through bulk heat dissipation, the heat conduction material is filled between every two conductive units, so that the heat dissipation capacity of the diode is improved.
3. Compared with the horizontal conduction of the traditional AlGaN/GaN diode, the vertical 2DEG channel conduction is adopted, so that the current density of a unit area is improved, and the area utilization rate of the diode is improved.
Drawings
FIG. 1 is N + -a schematic structural diagram of the GaN layer.
FIG. 2 is a view of FIG. 1 with N grown thereon - -schematic structural diagram after GaN layer.
Fig. 3 is a schematic diagram of the structure after etching the grooves on the basis of fig. 2.
Fig. 4 is a schematic structural view of the AlGaN layer grown on the basis of fig. 3.
Fig. 5 is a schematic view of the structure of fig. 4 after deposition of a thermally conductive material.
Fig. 6 is a schematic view of the structure of the polishing machine of fig. 5.
Fig. 7 is a schematic view of the structure of the cathode after the cathode is fabricated in accordance with fig. 6.
Fig. 8 is a schematic view of the structure of the anode after the anode is fabricated on the basis of fig. 7.
Detailed Description
The invention is further illustrated by the following examples in conjunction with the accompanying drawings, which are not to be construed as limiting the scope of the invention.
The invention relates to a GaN-based diode designed by bulk heat dissipation and a preparation method thereof, which can effectively reduce n - -equivalent resistance of GaN transport layer, thereby increasing forward current of the diode; meanwhile, the heat conducting material is filled between each two conductive units, so that the heat dissipation capacity of the diode can be improved.
The preparation method of the GaN-based diode designed through bulk heat dissipation comprises the following steps:
1. as shown in FIG. 1, a N is provided + A GaN layer 1.
In the present invention, the N + The GaN layer 1 serves as a substrate. Preferably, the N + The thickness of the GaN layer 1 is 1-4 μm.
2. As shown in FIG. 2, at said N + Growth of a layer of N on the front side of the GaN layer - A GaN transport layer 2. The N is - The GaN transfer layer 2 is a drift layer. Preferably, the N - The GaN transport layer 2 has a thickness of 3 to 9 μm.
In the present invention, the N can be grown by MOCVD (metal organic chemical vapor deposition) process, like in the prior art - A GaN transport layer 2.
3. As shown in FIG. 3, at said N + GaN layers 1 and N - Etching grooves a in GaN layer 2.
In the present invention, the recess a may be etched using an ICP (inductively coupled plasma) etching technique.
Wherein, during etching, the width of the groove a is 4-10 mu m. And, making the depth of the groove a be the same as the depth of N + The GaN layer 1 is etched away by 100-500nm, i.e., during etching away the N - After GaN transport layer 2, part of the thickness of said N is etched away + -a GaN layer 1 and such that said N + The etched thickness of the GaN layer 1 is 100-500nm.
4. As shown in FIG. 4, an AlGaN layer 3 having a thickness of 10 to 30nm is grown as a whole.
In the present invention, the AlGaN layer 3 may be grown by MOCVD (metal organic chemical vapor deposition) process as well. The AlGaN layer 3 is to cover the N - A GaN layer 2 and the bottom and sides of the recess a.
Preferably, during growth, the Al component of the AlGaN layer is controlled to be 15% -40%.
In the present invention, by regrowing the AlGaN layer 3, an AlGaN/GaN heterojunction is formed, and the AlGaN layer 3 and the N are made - The GaN transfer layer 2 forms 2DEG (two-dimensional electron gas) b in the vertical direction, and does not form 2DEG in the horizontal direction. Thereby reducing the N - The equivalent resistance of the GaN transport layer 2 increases the forward current density of the diode. Meanwhile, the electron mobility of the 2DEG is higher, so that the diode has better frequency characteristics.
5. As shown in fig. 5, a thermally conductive material 4 is deposited on the AlGaN layer 3.
When the heat conducting material 4 is deposited, the heat conducting material 4 is enabled to fill the groove a, and the whole device surface is enabled to be deposited with the heat conducting material 4, so that the wave-shaped growth result appears on the surface.
Preferably, the heat conducting material 4 is heat conducting silicone grease or phase change heat conducting paste.
6. As shown in fig. 6, the heat conductive material 4 is polished, the heat conductive material 4 above the AlGaN layer 3 is removed, and only the heat conductive material 4 located in the groove a remains, and the top surface of the remaining heat conductive material 4 is made flush with the top surface of the AlGaN layer 3.
In the invention, the surface of the device after the heat conduction material is grown is wavy, and a polisher is adopted to treat the surface of the device, so that the surface is smooth.
7. As shown in FIG. 7, at said N + A cathode 5 is made on the bottom surface of the GaN layer 1.
In the present invention, the cathode 5 is preferably formed by laminating a Ti layer, an Al layer, a Ni layer and an Au layer, wherein the Ti layer has a thickness of 20nm, the Al layer has a thickness of 160nm, the Ni layer has a thickness of 55nm, and the Au layer has a thickness of 45nm.
More preferably, after the cathode 5 is manufactured, a rapid annealing treatment of the metal is performed. The rapid annealing treatment of the metal is carried out at 870 ℃ and N 2 The rapid thermal annealing was performed in an atmosphere for 30 seconds. The ohmic contact metal from which the cathode 5 is made may be alloyed by a rapid metal annealing process to facilitate the completion of the fabrication of the cathode 5.
8. As shown in fig. 8, an anode 6 is fabricated on the thermally conductive material 4 and a portion of the AlGaN layer 3.
Preferably, the anode 6 is formed by laminating a Ni layer and an Au layer. Wherein the thickness of the Ni layer is 45nm, and the thickness of the Au layer is 200nm.
The present invention is described in more detail below with several specific examples to facilitate the fabrication of the GaN-based diode through bulk heat dissipation design that can be accomplished by one skilled in the art based on the description of the present invention.
The following several embodiments have AlGaN layers of different thicknesses, grooves a of different widths, and different thermally conductive materials, all otherwise identical.
[ example 1 ]
In this embodiment, using a thermally conductive silicone grease as a thermally conductive material, the regrown AlGaN layer 3 has a thickness of 20nm and an al composition of 20%, and the width of the groove a is 5um.
Thus, the preparation method of the GaN-based diode designed by bulk heat dissipation of the embodiment comprises the following steps:
and step 1, growing epitaxial materials.
1.1 Selecting N + -a GaN layer 1;
1.2 At the N) + On the GaN layer 1, epitaxial growth is carried out to grow a layer of N - A GaN transport layer 2.
And 2, manufacturing a deposition groove.
2.1 Firstly, spin coating is carried out by a spin coater at the rotating speed of 3500 revolutions per minute to obtain a photoresist mask; exposing by using an NSR1755I7A photoetching machine to form a mask pattern of the mesa active region;
2.2 The masked substrate was then etched in a Cl using an ICP98c inductively coupled plasma etcher 2 The plasma etches the groove a at an etching rate of 20nm/s, wherein the width of the groove a is 5um.
And 3, growing materials in the grooves.
3.1 Firstly, regrowing an AlGaN layer 3 in the groove a, so that the grown AlGaN uniformly covers the bottom and the side wall of the groove a, the thickness of the regrown AlGaN layer 3 is 20nm, and the Al component is 20%;
3.2 Secondly, after the AlGaN layer 3 is regrown, the heat conduction material 4 is deposited on the surface of the whole device, the selected heat conduction material is heat conduction silicone grease, and the surface has a wave-shaped growth result.
And 4, grinding the surface material of the device.
The surface of the device after the heat conduction material 4 grows is wavy, and then a polisher is used for processing the surface of the device, so that the surface is smooth.
And 5, manufacturing a cathode 5.
Firstly, spin coating is carried out by a spin coater at a rotation speed of 5000 revolutions per minute to obtain a photoresist mask with a thickness of 0.8 mu m;
then, baking for 10min in a high-temperature oven with the temperature of 80 ℃, and exposing by adopting an NSR1755I7A photoetching machine to form a regional mask pattern of the cathode 5;
then, manufacturing a cathode 5 by adopting an ohm-50 electron beam evaporation table at an evaporation rate of 0.1nm/s, wherein Ti/Al/Ni/Au is sequentially selected as cathode metal, wherein the thickness of Ti is 20nm, the thickness of Al is 160nm, the thickness of Ni is 55nm and the thickness of Au is 45nm; after the ohmic contact metal is evaporated, metal stripping is carried out to obtain a complete cathode 5;
finally, the rapid thermal annealing furnace is further utilized by RTP500, and N is at 870 DEG C 2 And (3) carrying out rapid thermal annealing for 30 seconds in the atmosphere, and alloying the ohmic contact metal to finish the manufacturing of the cathode 5.
And 6, manufacturing the anode 6.
Firstly, spin coating is carried out by a spin coater at a rotation speed of 5000 revolutions per minute to obtain a photoresist mask with a thickness of 0.8 mu m;
then, baking for 10min in a high-temperature oven with the temperature of 80 ℃, and exposing by adopting an NSR1755I7A photoetching machine to form a regional mask pattern of the anode 6;
finally, evaporating anode metal by adopting an ohm-50 electron beam evaporation table at an evaporation rate of 0.1nm/s, wherein Ni/Au is sequentially selected as the anode metal, the thickness of Ni is 45nm, and the thickness of Au is 200nm; after the completion of the evaporation, metal peeling was performed to obtain a complete anode 6.
[ example 2 ]
In this example, using a thermally conductive silicone grease as a thermally conductive material, the regrown AlGaN layer 3 had a thickness of 30nm and an al composition of 40%, and the width of the groove a was 8um.
Thus, the preparation method of the GaN-based diode designed by bulk heat dissipation of the embodiment comprises the following steps:
and step 1, growing epitaxial materials.
1.1 Selecting N + GaN layer 1 as substrate;
1.2 At N) + On the GaN layer 1, epitaxial growth is carried out to grow a layer of N - A GaN transport layer 2.
And 2, manufacturing the deposition groove a.
2.1 Firstly, spin coating is carried out by a spin coater at the rotating speed of 3500 revolutions per minute to obtain a photoresist mask; exposing by using an NSR1755I7A photoetching machine to form a mask pattern of the mesa active region;
2.2 The masked substrate was then etched in a Cl using an ICP98c inductively coupled plasma etcher 2 The plasma etches the groove a at an etching rate of 20nm/s, whichThe width of the groove a is 8um.
And 3, growing materials in the grooves.
3.1 Firstly, regrowing an AlGaN layer 3 in a groove a to ensure that the grown AlGaN uniformly covers the bottom and the side wall of the groove a, the thickness of the regrown AlGaN layer 3 is 30nm, and the Al component is 40%;
3.2 Secondly, after the AlGaN layer 3 is regrown, the heat conduction material 4 is deposited on the surface of the whole device, the selected heat conduction material is heat conduction silicone grease, and the surface has a wave-shaped growth result.
And 4, grinding the surface material of the device.
The surface of the device after the heat conduction material 4 grows is wavy, and then a polisher is used for processing the surface of the device, so that the surface is smooth.
And 5, manufacturing a cathode 5.
Firstly, spin coating is carried out by a spin coater at a rotation speed of 5000 revolutions per minute to obtain a photoresist mask with a thickness of 0.8 mu m;
then, baking for 10min in a high-temperature oven with the temperature of 80 ℃, and exposing by adopting an NSR1755I7A photoetching machine to form a regional mask pattern of the cathode 5;
then, manufacturing a cathode 5 by adopting an ohm-50 electron beam evaporation table at an evaporation rate of 0.1nm/s, wherein Ti/Al/Ni/Au is sequentially selected as cathode metal, wherein the thickness of Ti is 20nm, the thickness of Al is 160nm, the thickness of Ni is 55nm and the thickness of Au is 45nm; after the ohmic contact metal is evaporated, metal stripping is carried out to obtain a complete cathode 5;
finally, the rapid thermal annealing furnace is further utilized by RTP500, and N is at 870 DEG C 2 And (3) carrying out rapid thermal annealing for 30 seconds in the atmosphere, and alloying the ohmic contact metal to finish the manufacturing of the cathode 5.
And 6, manufacturing the anode 6.
Firstly, spin coating is carried out by a spin coater at a rotation speed of 5000 revolutions per minute to obtain a photoresist mask with a thickness of 0.8 mu m;
then, baking for 10min in a high-temperature oven with the temperature of 80 ℃, and exposing by adopting an NSR1755I7A photoetching machine to form a regional mask pattern of the anode 6;
finally, evaporating anode metal by adopting an ohm-50 electron beam evaporation table at an evaporation rate of 0.1nm/s, wherein Ni/Au is sequentially selected as the anode metal, the thickness of Ni is 45nm, and the thickness of Au is 200nm; after the completion of the evaporation, metal peeling was performed to obtain a complete anode 6.
[ example 3 ]
In this embodiment, phase change thermal paste is used as the thermal conductive material, the thickness of the regrown AlGaN layer 3 is 20nm, the al composition is 20%, and the width of the groove a is 5um.
Thus, the preparation method of the GaN-based diode designed by bulk heat dissipation of the embodiment comprises the following steps:
and step 1, growing epitaxial materials.
1.1 Selecting N + GaN layer 1 as substrate;
1.2 At N) + On the GaN layer 1, epitaxial growth is carried out to grow a layer of N - A GaN transport layer 2.
And 2, manufacturing the deposition groove a.
2.1 Firstly, spin coating is carried out by a spin coater at the rotating speed of 3500 revolutions per minute to obtain a photoresist mask; exposing by using an NSR1755I7A photoetching machine to form a mask pattern of the mesa active region;
2.2 The masked substrate was then etched in a Cl using an ICP98c inductively coupled plasma etcher 2 The plasma etches the groove a with the etching rate of 20nm/s, and the width of the groove a is 5um.
And 3, growing materials in the grooves.
3.1 Firstly, regrowing an AlGaN layer 3 in the groove a, so that the grown AlGaN uniformly covers the bottom and the side wall of the groove a, the thickness of the regrown AlGaN layer 3 is 20nm, and the Al component is 20%;
3.2 Secondly, after the AlGaN layer 3 is regrown, the heat conducting material 4 is deposited on the surface of the whole device, the selected heat conducting material is phase-change heat conducting paste, and the surface has a wave-shaped growth result.
And 4, grinding the surface material of the device.
The surface of the device after the heat conduction material 4 grows is wavy, and then a polisher is used for processing the surface of the device, so that the surface is smooth.
And 5, manufacturing a cathode 5.
Firstly, spin coating is carried out by a spin coater at a rotation speed of 5000 revolutions per minute to obtain a photoresist mask with a thickness of 0.8 mu m;
then, baking for 10min in a high-temperature oven with the temperature of 80 ℃, and exposing by adopting an NSR1755I7A photoetching machine to form a regional mask pattern of the cathode 5;
then, manufacturing a cathode 5 by adopting an ohm-50 electron beam evaporation table at an evaporation rate of 0.1nm/s, wherein Ti/Al/Ni/Au is sequentially selected as cathode metal, wherein the thickness of Ti is 20nm, the thickness of Al is 160nm, the thickness of Ni is 55nm and the thickness of Au is 45nm; after the ohmic contact metal is evaporated, metal stripping is carried out to obtain a complete cathode 5;
finally, the rapid thermal annealing furnace is further utilized by RTP500, and N is at 870 DEG C 2 And (3) carrying out rapid thermal annealing for 30 seconds in the atmosphere, and alloying the ohmic contact metal to finish the manufacturing of the cathode 5.
And 6, manufacturing the anode 6.
Firstly, spin coating is carried out by a spin coater at a rotation speed of 5000 revolutions per minute to obtain a photoresist mask with a thickness of 0.8 mu m;
then, baking for 10min in a high-temperature oven with the temperature of 80 ℃, and exposing by adopting an NSR1755I7A photoetching machine to form a regional mask pattern of the anode 6;
finally, evaporating anode metal by adopting an ohm-50 electron beam evaporation table at an evaporation rate of 0.1nm/s, wherein Ni/Au is sequentially selected as the anode metal, the thickness of Ni is 45nm, and the thickness of Au is 200nm; after the completion of the evaporation, metal peeling was performed to obtain a complete anode 6.
The GaN-based diode of the vertical AlGaN/GaN heterojunction designed through bulk heat dissipation forms a 2DEG in the vertical direction by utilizing the regrown AlGaN layer, so that N can be effectively reduced - The equivalent resistance of the GaN transport layer increases the forward current of the diode. Meanwhile, the heat dissipation capacity of the diode is improved by filling the heat conduction material between each of the conductive units. Finally, the invention adopts the vertical 2DEG channel to conduct electricity, improves the current density of unit area and improves the diodeArea usage of (2).
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention, and are not intended to limit the scope of the present invention. Modifications and equivalent substitutions can be made by those skilled in the art based on the present teachings without departing from the spirit and scope of the present teachings.

Claims (8)

1. The preparation method of the GaN-based diode designed through bulk heat dissipation is characterized by comprising the following steps of:
1) In N + -growing a layer of N on the front side of the GaN layer (1) - -a GaN transport layer (2);
2) At the N + -GaN layer (1) and N - -etching grooves (a) in the GaN-based transport layer (2), said grooves (a) having a width of 4-10 μm and a depth of said N + -etching away 100-500nm of the GaN layer (1);
3) Growing an AlGaN layer (3) with the thickness of 10-30 nm on the whole;
4) Depositing a heat conducting material (4) on the AlGaN layer (3);
5) Polishing the heat conducting material (4), removing the heat conducting material (4) above the AlGaN layer (3), only keeping the heat conducting material (4) in the groove (a), and enabling the top surface of the rest heat conducting material (4) to be flush with the top surface of the AlGaN layer (3);
6) At the N + -making a cathode (5) on the bottom surface of the GaN layer (1);
7) And manufacturing an anode (6) on the heat conducting material (4) and part of the AlGaN layer (3).
2. The method for manufacturing a GaN-based diode designed by bulk heat dissipation according to claim 1, wherein the Al composition of the AlGaN layer (3) is 15% -40%.
3. The method of manufacturing a GaN-based diode designed by bulk heat dissipation according to claim 2, characterized in that the AlGaN layer (3) and the N - -a GaN layer (2)Two-dimensional electron gas (b) is formed in the vertical direction and two-dimensional electron gas is not formed in the horizontal direction.
4. The method of manufacturing a GaN-based diode designed by bulk heat dissipation according to claim 3, wherein the thermally conductive material (4) is a thermally conductive silicone grease or a phase change thermal paste.
5. The method of manufacturing a GaN-based diode designed by bulk heat dissipation according to claim 4, wherein the cathode (5) is formed by stacking Ti layer, al layer, ni layer and Au layer, wherein the Ti layer has a thickness of 20nm, the Al layer has a thickness of 160nm, the Ni layer has a thickness of 55nm, and the Au layer has a thickness of 45nm.
6. The method of fabricating a GaN-based diode designed by bulk heat dissipation as recited in claim 5, wherein after said step 5), a rapid annealing of the metal is performed before said step 6), said rapid annealing of the metal being performed at a temperature of 870 ℃ at N 2 The rapid thermal annealing was performed in an atmosphere for 30 seconds.
7. The method for manufacturing a GaN-based diode designed by bulk heat dissipation according to claim 6, wherein the anode (6) is formed by laminating a Ni layer and Au layer, wherein the thickness of the Ni layer is 45nm and the thickness of the Au layer is 200nm.
8. A GaN-based diode designed by bulk heat dissipation, characterized in that it is prepared by the preparation method of any one of claims 1-7.
CN202310074647.8A 2023-02-07 2023-02-07 GaN-based diode designed through bulk heat dissipation and preparation method thereof Pending CN116314257A (en)

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