CN116295105B - Optical interference type micro-machined wafer surface morphology measuring device and measuring method - Google Patents
Optical interference type micro-machined wafer surface morphology measuring device and measuring method Download PDFInfo
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- CN116295105B CN116295105B CN202310318471.6A CN202310318471A CN116295105B CN 116295105 B CN116295105 B CN 116295105B CN 202310318471 A CN202310318471 A CN 202310318471A CN 116295105 B CN116295105 B CN 116295105B
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- 238000005259 measurement Methods 0.000 claims abstract description 141
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
- G01B11/2441—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures using interferometry
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Abstract
The invention discloses a light interference type micro-machined wafer surface morphology measuring device and a measuring method, and relates to the technical field of surface micro-morphology measurement. The device provided by the invention comprises: the device comprises a base, a vertical support, a Z-axis rough adjustment moving guide rail, a horizontal support, a measuring module, a two-dimensional moving table, a Z-axis fine adjustment moving table and a wafer sample table; one end of the vertical support is fixed on the base, and the other end of the vertical support is fixedly provided with a Z-axis rough adjustment moving guide rail; one end of the horizontal bracket is arranged on the Z-axis rough adjustment moving guide rail, and the other end of the horizontal bracket is provided with a measuring module; the two-dimensional mobile station is arranged on the base; the Z-axis fine adjustment mobile station is arranged on the two-dimensional mobile station; the wafer sample stage is arranged on the Z-axis fine adjustment moving stage; the two-dimensional mobile station is used to adjust the position of the Z-axis fine-tuning mobile station. The device structure can improve the high precision and stability of the surface micro-topography measurement, and simultaneously meet the measurement of a large range, thereby being capable of matching the specific application requirements of the micro-machined wafer surface topography measurement.
Description
Technical Field
The invention relates to the technical field of surface micro-topography measurement, in particular to a device and a method for measuring the surface topography of an optical interference micromachined wafer.
Background
Along with the demands of micro-scale and integrated application of instruments and equipment in various fields, the demands for micro-scale mechanical structures and components thereof based on micro-machining technology are increasing, wherein typical micro-electromechanical system (MEMS) elements are manufactured on substrates such as wafers by adopting the micro-machining technology. Around the requirement, in the work of micro-machining process research, micro-structural machining process detection, element finished product inspection and the like, the micro-machined structure on the substrate must be characterized, namely the micro-topography of the surface of the substrate is measured. Methods for measuring surface micro-topography can be generally divided into two main categories, contact and non-contact. The current widely used step instrument is a contact type measuring device, which directly enables a probe to contact the surface of a sample, the probe moves up and down along with the surface profile when the surface of the sample moves, and then a proper method is adopted to measure the displacement of the probe, so that the height change information of the upper surface of the probe motion track can be obtained, and the surface micro-morphology is represented. However, the method requires the probe to be in contact with the surface at any time, so that pressure and friction exist between the probe and the surface of the wafer sample to be measured at any time, the surface of the wafer sample to be measured can be damaged to a certain extent, and sensitive structures such as a cantilever beam, a film and the like cannot be measured by using the method.
The optical measurement is a method which is more and more convenient to apply in non-contact surface micro-morphology measurement. The optical interferometry is to make the height change of the sample surface of the wafer to be measured correspond to the distance change between the fixed height probe surface and the current measuring point of the sample surface of the wafer to be measured, the basic measuring principle is that the detection light beam is emitted to the sample surface of the wafer to be measured from the probe surface and then reflected to the optical signal acquisition device, the distance to be measured corresponds to the transmission optical path of the reflection light, the reflection light interferes with a reference light beam with a constant optical path inside the device, and the phase difference of the interference light is the optical path difference of the two light beams, so that the height change of each measuring point of the sample surface of the wafer to be measured can be correspondingly obtained. The optical interferometry has outstanding high-precision advantages, especially single-wavelength interferometry, but the basic interference phase demodulation process limits the measurement range, and meanwhile, the conventional interferometer optical path structure is dispersed, interference from a measurement optical path, especially measurement stability caused by the change of the optical reflection characteristics of the surface of a wafer sample to be measured, is serious.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a device and a method for measuring the surface morphology of an optical interference type micromachined wafer.
In order to achieve the above object, the present invention provides the following solutions:
an optical interference type micro-machined wafer surface topography measuring device, comprising: the device comprises a base, a vertical support, a Z-axis rough adjustment moving guide rail, a horizontal support, a measuring module, a two-dimensional moving table, a Z-axis fine adjustment moving table and a wafer sample table;
one end of the vertical support is fixed on the base; a Z-axis rough adjustment moving guide rail is fixedly arranged at the other end of the vertical support; one end of the horizontal bracket is arranged on the Z-axis rough adjustment moving guide rail; a measuring module is arranged at the other end of the horizontal bracket; the Z-axis rough adjustment moving guide rail is used for adjusting the position of the horizontal bracket;
the two-dimensional mobile station is arranged on the base; the Z-axis fine adjustment mobile station is arranged on the two-dimensional mobile station; the wafer sample stage is arranged on the Z-axis fine adjustment moving stage; the center of the wafer sample stage and the center of the Z-axis fine adjustment mobile stage are positioned on the same normal line; the two-dimensional mobile station is used for adjusting the position of the Z-axis fine adjustment mobile station;
when the Z-axis fine adjustment mobile station is located at the center of the two-dimensional mobile station, the intersection point of the vertical direction of the center of the measurement module and the plane of the Z-axis fine adjustment mobile station is located at the center of the Z-axis fine adjustment mobile station along a long line, or the intersection point of the vertical direction of the center of the measurement module and the plane of the Z-axis fine adjustment mobile station along a long line is located within a preset range from the center of the Z-axis fine adjustment mobile station, the position of the Z-axis fine adjustment mobile station is adjusted through the two-dimensional mobile station, and the intersection point of the vertical direction of the center of the measurement module and the plane of the Z-axis fine adjustment mobile station along the long line can traverse all areas of the wafer sample station.
Optionally, the measurement module includes: the device comprises a rotary driver, a horizontal displacement piezoelectric driver, a probe mounting interface and an optical interference type sensing probe;
one end of the rotary driver is arranged at the other end of the horizontal bracket; the other end of the rotary driver is connected with one end of the horizontal displacement piezoelectric driver; the normal line of the rotary driver is perpendicular to the normal line of the horizontal displacement piezoelectric driver; the other end of the horizontal displacement piezoelectric driver is connected with the probe mounting interface; the optical interference type sensing probe is installed in the probe installation interface.
Optionally, the horizontal displacement piezoelectric driver includes: an elastic support and a piezoelectric layer;
one end of the elastic support is connected with the other end of the rotary driver; the other end of the elastic support is connected with the probe mounting interface; the piezoelectric layer is arranged on one end of the elastic support.
Optionally, the elastic support comprises: a first curved beam and a second curved beam;
one end of the first curved beam and one end of the second curved beam are converged to form a head connected with the rotary driver; the other end of the first curved beam and the other end of the second curved beam are converged to form an end head connected with the probe mounting interface; the inner space formed by the first curved beam and the second curved beam is an equilateral parallelogram; the thickness of one end of the first curved beam is smaller than that of the other end of the first curved beam; the thickness of one end of the second curved beam is smaller than that of the other end of the second curved beam; and one end of the first curved beam and one end of the second curved beam connected with the first curved beam are both provided with piezoelectric layers.
Optionally, the optical interference type sensing probe includes: the device comprises a grating, a phase adjusting layer, an optical path assembly seat, a first collimating head, a second collimating head, a first optical detector, a second optical detector and a laser;
one end face of the grating faces the wafer sample stage; one end face of the phase adjusting layer is arranged on the other end face of the grating; the phase adjusting layer is of a hollow structure so as to form a grating diffraction light transmission space; the light path assembly seat is arranged on the other end face of the phase adjusting layer; the first collimating head and the second collimating head are both arranged in the light path assembly seat; the second optical detector is connected with the second collimating head through a single-mode optical fiber; the first optical detector and the laser are connected with the first alignment head through single-mode optical fibers.
Optionally, the two-dimensional moving table comprises two electrically controlled moving guide rails in orthogonal directions.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
according to the optical interference type micro-machined wafer surface morphology measuring device, the Z-axis rough adjustment moving guide rail, the two-dimensional moving table, the Z-axis fine adjustment moving table and other components are arranged, so that the position of the measuring module and the position of the wafer sample table can be adjusted in a moving mode, the high precision and the stability of surface micro-morphology measurement can be improved, the measurement of a large range can be met, and the specific application requirements of micro-machined wafer surface morphology measurement can be matched.
The invention also provides the following embodiments:
the optical interference type micro-machined wafer surface morphology measuring method is applied to the optical interference type micro-machined wafer surface morphology measuring device; the method comprises the following steps:
placing a wafer sample to be measured and adjusting an initial measurement position;
starting an optical interference type sensing probe and acquiring an initial measurement state;
and carrying out one-dimensional or two-dimensional surface morphology measurement on the wafer sample to be measured based on the initial measurement state to obtain a measurement result.
Optionally, turning on the optical interference type sensing probe and acquiring an initial measurement state, specifically including:
starting a laser, and collecting interference light signals received by the first light detector and the second light detector to obtain a voltage signal representing light intensity;
adjusting the initial measurement height, controlling the z-axis fine adjustment moving table to move upwards, continuously recording the voltage signal of the first optical detector in the moving process, and moving the surface of the wafer sample to be measured until the surface of the wafer sample to be measured is within 0.5mm from the lower part of the optical interference type sensing probe and the voltage signal change amplitude of the first optical detector is larger than a set threshold value, and stopping moving;
controlling a phase adjusting layer in the optical interference type sensing probe to enable the grating plane to translate within the wavelength range of +/-0.25 times of the laser, and continuously recording a voltage signal of the first optical detector and a voltage signal of the second optical detector;
Obtaining a voltage signal amplitude ratio based on the voltage signal of the first photodetector and the voltage signal of the second photodetector;
in the process of continuously recording the voltage signals of the first optical detector and the voltage signals of the second optical detector, the plane height of the optical grating is adjusted to the position of the right intersection point according to the voltage signal change of the first optical detector; the position of the positive intersection point is the position corresponding to the 2n+pi/2 phase in a cosine relation curve of the voltage signal of the first optical detector along with the displacement of the grating plane; wherein n is an integer;
the measurement initial point height was recorded as 0.
Optionally, performing one-dimensional or two-dimensional surface topography measurement on the wafer sample to be measured based on the initial measurement state to obtain a measurement result, which specifically includes:
controlling a two-dimensional moving table to drive a wafer sample table to perform uniform scanning motion on a two-dimensional plane, recording moving coordinates of the wafer sample table at each moment, and collecting output voltage signals of a first optical detector and output voltage signals of a second optical detector in the optical interference type sensing probe at a set sampling rate;
and demodulating and calculating the change value of the surface height of the wafer sample to be measured at each measurement coordinate point relative to the height of the measurement initial point based on the voltage signal amplitude ratio, the output voltage signal of the first optical detector and the output voltage signal of the second optical detector, and obtaining the measurement result of the surface micro-morphology of the wafer sample to be measured.
The optical interference type micro-machined wafer surface morphology measuring method is applied to the optical interference type micro-machined wafer surface morphology measuring device; the method comprises the following steps:
acquiring the surface height of a wafer sample to be tested; the surface height of the wafer sample to be measured is measured by the optical interference type micro-machined wafer surface morphology measuring method;
selecting a measurement coordinate point in a region to be finely measured, and controlling a two-dimensional moving table to move the selected measurement coordinate point to the position right below the optical interference type sensing probe; the area to be finely measured is a selected area on the surface of the wafer sample to be measured, and the surface height rough measurement data of the area is measured by adopting the optical interference type micro-machined wafer surface morphology measurement method;
obtaining an average slope of the surface height of the wafer sample to be measured along the y-axis within a set measurement range by taking the selected measurement coordinate point as the center based on the surface height data of the wafer sample to be measured;
converting the average slope into an included angle between the optical interference type sensing probe and the horizontal direction, controlling the rotation driver to rotate according to the included angle so as to drive the optical interference type sensing probe to rotate, adjusting the plane of the optical interference type sensing probe to be parallel to the area to be measured finely, and starting the optical interference type sensing probe and acquiring the initial measurement state of the area to be measured finely after determining the initial measurement position of the optical interference type sensing probe;
Carrying out one-dimensional or two-dimensional surface morphology measurement on the area to be finely measured based on the initial measurement state to obtain a measurement result;
in the one-dimensional or two-dimensional surface topography measurement of the area to be measured, the horizontal displacement piezoelectric driver drives the optical interference type sensing probe to move so as to realize the rapid scanning in the x-axis direction.
The two optical interference type micro-machined wafer surface morphology measuring methods provided by the invention have the same technical effects as those realized by the device provided by the invention, so that the detailed description is omitted.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a light interference type micro-machined wafer surface morphology measuring device according to the present invention;
FIG. 2 is a front view of the optical interference type micro-machined wafer surface topography measuring device provided by the invention;
FIG. 3 is a side view of a measurement module provided by the present invention;
FIG. 4 is a schematic diagram of a horizontal displacement piezoelectric actuator according to the present invention;
FIG. 5 is a schematic diagram of a horizontal displacement piezoelectric actuator according to the present invention;
FIG. 6 is a schematic diagram of the structure of the optical interference type sensor probe and the connection of the photoelectric elements thereof;
FIG. 7 is a schematic diagram of a method for measuring the surface topography of an optical interference type micro-machined wafer according to the present invention;
FIG. 8 is a schematic diagram showing the position of the intersection point d according to the present invention;
FIG. 9 is a schematic diagram of another optical interference type micro-machined wafer surface topography measurement method according to the present invention.
Symbol description:
the device comprises a 1-base, a 2-two-dimensional moving table, a 3-z axis fine adjustment moving table, a 4-wafer sample table, a 5-vertical support, a 6-z axis coarse adjustment moving guide rail, a 7-horizontal support, an 8-measuring module, a 9-rotary driver, a 10-horizontal displacement piezoelectric driver, an 11-probe mounting interface, a 12-optical interference type sensing probe, a 13-elastic support, a 14-piezoelectric layer, a 15-grating, a 16-phase adjustment layer, a 17-optical path assembly seat, a 18-single mode optical fiber, a 19-collimating head, a 20-laser, a 21-first optical detector and a 22-second optical detector.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Aiming at the defects existing in the measurement process of the existing optical interference type surface micro-morphology measurement equipment, the optical interference measurement device needs to be optimized in the aspects of range expansion, stability improvement and the like. Meanwhile, a more perfect equipment system and a more convenient and efficient measurement method are required to be matched according to the specific application requirements of the micro-machined wafer surface morphology measurement.
Based on the above, the invention aims to provide a device and a method for measuring the surface morphology of a micro-machined wafer by optical interference with a wide range, and the device and the method can ensure high precision and stability of the surface micro-morphology measurement so as to match specific application requirements of the micro-machined wafer surface morphology measurement.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Example 1
The embodiment provides an optical interference type micro-machined wafer surface morphology measuring device which is generally divided into a sample platform and a measuring arm. As shown in fig. 1 and 2, the sample stage part is a base 1, a two-dimensional moving stage 2, a z-axis fine moving stage 3 and a wafer sample stage 4 in this order from bottom to top. Wherein the base 1 is used for carrying and installing the whole measuring device, and the upper surface is high and level, so that the counterweight is large for obtaining higher stability. The two-dimensional moving table 2 is fixedly arranged on the upper surface of the base 1 and comprises two electric control moving guide rails in orthogonal directions. The z-axis fine adjustment moving stage 3 is mounted on a two-dimensional moving stage, and its horizontal position can be realized by moving the moving guide rail of the two-dimensional moving stage 2 in a certain plane area. The z-axis fine adjustment moving table 3 provides high-precision vertical displacement adjustment within +/-1 mm by a precision electric control moving device in the vertical direction, and the used precision electric control moving device can adopt motor driving, piezoelectric driving, electromagnetic driving and other suitable driving modes. The wafer sample stage 4 is mounted and fixed at a central position on the upper surface of the z-axis fine adjustment moving stage 3, both of which are centered on a normal line. The wafer sample stage 4 requires a high level upper surface and can be matched with sample fixing methods such as a pulling sheet clamp, a vacuum chuck and the like.
The measuring arm part comprises a vertical bracket 5, a z-axis rough adjustment moving guide rail 6, a horizontal bracket 7 and a measuring module 8 from left to right. Wherein, vertical support 5 installs on base 1, is located two-dimensional mobile station 2 left side, perpendicular with base 1 upper surface. The z-axis rough adjustment moving guide rail 6 is fixedly arranged on the right side surface of the vertical support 5, and the guide rail direction of the z-axis rough adjustment moving guide rail 6 is perpendicular to the upper surface of the base 1. One end of the horizontal support 7 is mounted on the z-axis rough movement guide 6, and the vertical position of the horizontal support 7 is adjusted by the z-axis rough movement guide 6, and the horizontal support 7 is parallel to the upper surface of the base 1 and parallel to one of the movement guide rails of the two-dimensional movement table 2, that is, parallel to the y-axis direction as shown in fig. 1 and 2. The measuring module 8 is fixedly arranged below the other end of the horizontal bracket 7 and vertically faces the position of the two-dimensional moving table 2 close to the center.
Example two
This embodiment is a further improvement of the measurement module 8 of the optical interference type micro-machined wafer surface topography measurement apparatus provided in the first embodiment, wherein, as shown in fig. 3, the measurement module 8 used in this embodiment includes: a rotary actuator 9, a horizontal displacement piezoelectric actuator 10, a probe mounting interface 11 and an optical interference type sensing probe 12. Wherein the rotary drive 9 is mounted and fixed below the horizontal support 7 for outputting an angular displacement about the x-axis as in fig. 3, an output range of + -90 deg.. The rotary driver 9 is an electrically controlled driver, and can be driven by a motor, a piezoelectric motor or other suitable driving means. One end of the horizontal displacement piezoelectric actuator 10 is mounted at the output end of the rotary actuator 9. The initial plane of the horizontal displacement piezoelectric actuator 10 is perpendicular to the z-axis, which provides at least displacement in the x-axis direction as shown in fig. 3, and the overall displacement plane angle is adjustable by the rotary actuator 9. The upper end of the probe mounting interface 11 is fixed to the other end of the horizontal displacement piezoelectric driver 10, and has a certain length in the z-axis direction. The lower end of the probe mounting interface 11 is provided with a matching structure and a circuit interface for mounting and connecting the optical interference type sensing probe 12. An optical interference type sensing probe 12 is mounted at the lower end of the probe mounting interface 11 with its light emitting plane facing downward and initially perpendicular to the z-axis direction.
Example III
This embodiment further improves the horizontal displacement piezoelectric actuator 10 on the basis of the optical interference type micro-machined wafer surface topography measuring device provided in the above-described second embodiment, as shown in fig. 4, in this embodiment, the horizontal displacement piezoelectric actuator 10 includes an elastic support 13 and a piezoelectric layer 14. Wherein one end of the elastic support 13 is connected with the rotary driver 9, and the elastic support 13 forms an equilateral parallelogram in a moving plane. The parallelogram four-side beams are rectangular in section, and the width of each beam along the normal direction of the moving plane is more than 10 times of the thickness. The thickness of two beams of the elastic support, which are connected near the rotary driver 9, is lower than that of two beams at the far end, and the four beams of the elastic support 13 and the corner joints thereof can be integrally formed or assembled to form a first curved beam and a second curved beam. The bending stiffness of the elastic support 13 is significantly lower at the other corners than at the four-sided beam when the elastic support is attached to the rotary drive 9. The body of the elastic support 13 is made of a metallic or inorganic nonmetallic elastic material. Two piezoelectric layers 14 are each attached to the outer sides of two beams connected in the elastic support 13 near the rotary actuator 9, approximately covering the beam outer side surfaces. The piezoelectric layer 14 is made of piezoelectric ceramics and driving electrodes. The overall horizontal displacement piezoelectric actuator is symmetrical about the x-axis as in fig. 3.
As shown in fig. 5, the working principle of the horizontal displacement piezoelectric actuator 10 in this embodiment is as follows: the driving voltage is applied to the piezoelectric ceramic through the driving electrode to enable the piezoelectric layer 14 to generate axial expansion deformation, and as the piezoelectric layer 14 is adhered and fixed with the corresponding beam a in the elastic support 13, the axial expansion deformation of the piezoelectric layer 14 drives the elastic beam a to generate bending deformation, the applied driving voltage correspondingly generates a determined curvature radius r and a rotation angle alpha, one end of the elastic beam a is fixed at the output end of the rotary driver 9, and the other end of the elastic beam a generates displacement due to bending of the beam. The other end is connected with the other elastic beam b through a corner as a moving end, and the bending rigidity of each elastic beam is higher than that of the connection part of each corner, so that the bending of the elastic beam a drives the elastic beam b to rotate, the specific rotation angle is approximately alpha, and the horizontal displacement piezoelectric driver 10 is symmetrical relative to the x axis, and the z-direction width of each beam is obviously larger than the thickness, so that the tail end of the piezoelectric layer driven horizontal displacement piezoelectric driver 10 generates plane displacement Deltax along the x axis direction. Specifically, decreasing the angle between the two beams in the elastic support 13 increases the planar displacement generated by a certain driving voltage.
Example IV
This embodiment is a further improvement of the optical interference type sensing probe 12 based on the optical interference type micro-machined wafer surface topography measuring device provided in the third embodiment, as shown in fig. 6, in this embodiment, the optical interference type sensing probe 12 includes a grating 15, a phase adjusting layer 16, an optical path assembly seat 17, a single mode optical fiber 18, a collimator 19, a laser 20, a first optical detector 21, and a second optical detector 22. Wherein the grating 15 is located at the lowest layer towards the wafer sample stage 4. The grating 15 has a one-dimensional grating structure, and can be a reflective layer stripe manufactured on a light-transmitting substrate or a hollowed-out light-transmitting stripe manufactured in the light-reflecting substrate. The lower surface of the phase adjustment layer 16 is fixed to the upper surface of the grating 15. The phase adjustment layer 16 is annular in shape, leaving a diffraction light transmission space of the grating 15 in its center. The phase adjusting layer 16 can adopt piezoelectric, electrostatic, electromagnetic and other suitable electric control driving modes to generate translation of the lower surface along the normal direction so as to drive the plane of the grating 15 to translate within the range of +/-2 μm. The lower surface of the optical path assembly seat 17 is fixed with the upper surface of the phase adjustment layer 16, a cavity corresponding to the annular phase adjustment layer 16 is arranged in the central area of the optical path assembly seat 17, a diffraction light transmission space of the grating 15 is reserved, a through hole for installing an optical fiber structure is arranged in the center of the top plane of the optical path assembly seat 17 and at a specific position along the direction perpendicular to the stripes of the grating 15, and the position of the through hole corresponds to the diffraction light receiving position of the grating. The single-mode fiber 18 is connected with the collimating head 19, and the collimating head 19 is inserted and fixed in a corresponding through hole on the top plane of the light path assembly seat 17, the collimating head 19 is perpendicular to the plane of the grating 15, and the collimating head 19 is internally provided with a micro-lens structure to realize the collimation, emission and convergence of the transmitted light in the single-mode fiber 18. The collimating head mounted in the center of the optical path assembly seat 17 is connected with a single-mode optical fiber and connected with the laser 20 and the first optical detector 21 through a circulator, the other collimating head mounted on one side of the optical path assembly seat 17 is connected with the second optical detector 22 through the other single-mode optical fiber, and the first optical detector 21, the second optical detector 22, the circulator and the single-mode optical fiber are all matched with the wavelength of the laser 20. The optical interference type sensing probe 12 is mounted and fixed at the lower end of the probe mounting interface 11, the plane of the initial grating 15 is parallel to the upper surface of the wafer sample stage 4, and the photoelectric elements such as the laser 20, the first optical detector 21 and the second optical detector 22 connected with the optical interference type sensing probe 12 can be optionally mounted in the horizontal bracket 7, the vertical bracket 5 or other peripheral detection devices outside the device structure shown in fig. 1.
Based on the above-described structure, the measurement principle of the optical interference type sensing probe 12 in this embodiment is as follows: the laser 20 generates monochromatic laser and transmits the monochromatic laser to the central collimating head through the circulator, the emitted collimated light beam vertically reaches the plane of the grating 15, a part of the light is transmitted to the surface of the wafer sample to be tested below and then returns to the grating 15 after being reflected, interference occurs between the reflected light and the light directly reflected at the grating 15 before, each diffraction order interference light of the grating is generated, the phase of each diffraction order interference light is determined by the optical path difference corresponding to the vertical distance from the plane of the grating 15 to the surface of the wafer sample to be tested, wherein the 0 order interference light vertically returns to the central collimating head and is received and input into a single-mode optical fiber, and is transmitted to the first optical detector 21 through the circulator to obtain the 1 st interference light intensity signal I 1 The 1 st diffraction order interference light of the grating reaches the other collimating head to be received and input into a single-mode optical fiber and transmitted to the second optical detector 22 to obtain a 2 nd interference light intensity signal I 2 And performing interference phase demodulation on the two light intensity signals to obtain the vertical distance change from the grating plane to the surface of the wafer sample to be detected.
Based on this, in the present embodiment, the key of the measurement principle of the optical interference type sensing probe is: (1) According to the principle of a grating interferometer, the received two detected interference light intensity signals are in an inverse complementary relation, and the light intensity change of the interference participated by the return sensing probe due to the reflection characteristic difference of the surface of the wafer sample to be detected is considered as follows:
Wherein lambda is the wavelength of the laser used, I b For the total intensity involved in interference, gamma is the interference contrast, I b And the gamma parameters are directly influenced by the light intensity reflected back to the sensing probe by the surface of the wafer sample to be tested. A. B is the amplitude coefficient of two interference light intensity signals, and is mainly determined by the diffraction characteristic of the grating and the mounting and transmission characteristics of the collimating head, namely, the structure of the optical interference type sensing probe is determined, and then A and B are basically unchanged. Thereby, the two complementary light intensity signals are weighted and summed according to the amplitude coefficient ratio k=A/B, and I can be obtained b When the structure of the optical interference type sensing probe and the photoelectric element thereof are stable, only the light intensity reflected back to the sensing probe by the surface of the wafer sample to be tested is considered to correspond to the parameter I b And the influence of gamma, gamma and I b The change of the wafer sample to be measured is uniquely corresponding to the change of the wafer sample to be measured, so that amplitude compensation is performed in subsequent optical interference signal demodulation, and interference of the change of the reflection characteristic of the surface of the wafer sample to be measured on a measurement result is reduced. (2) The phase adjusting layer in the optical interference type sensing probe adjusts the initial distance between the grating plane and the surface of the wafer sample to be detected by generating grating displacement so as to obtain an optimized interference optical signal.
Based on the description of the first to fourth embodiments, the principles of the optical interference type micro-machined wafer surface morphology measuring device provided by the invention are as follows:
Through the control adjustment of the two-dimensional moving table 2, the z-axis coarse adjustment moving guide rail 6 and the z-axis fine adjustment moving table 3, a selected point to be measured on the surface of a wafer sample to be measured can be placed at a proper distance under the optical interference type sensing probe 12, the vertical distance between the probe plane and a point to be measured on the surface of the wafer sample to be measured is measured by the optical interference type sensing probe 12, and the scanning measurement on the surface of the wafer sample to be measured is further realized by combining the control of the two-dimensional moving table 2.
The key principle of the optical interference type micro-machined wafer surface morphology measuring device of the invention is as follows: (1) The end face angle of the optical interference type sensing probe 12 is adjusted by the rotary driver 9, so that the inclined surface morphology of the wafer sample to be measured is finely measured. (2) The horizontal displacement piezoelectric driver 10 can drive the optical interference type sensing probe 12 to perform stable and high-speed reciprocating movement within a certain range along the x-axis direction under the control of alternating driving voltage, so that the high-speed transverse scanning measurement of the local surface is realized.
Based on the above description, the control (or driving) module and the signal detection device for the necessary connection of each component in the optical interference micromachined wafer surface morphology measurement device provided by the invention are configured according to the conventional requirements, wherein the driving mode of each component is required to be connected with a corresponding driving module and computer equipment such as an industrial personal computer, so that the output of each component is controlled and recorded through the computer, and meanwhile, the starting control of the laser and the signal acquisition and processing operation of each optical detector are completed.
Example five
The embodiment provides a method for measuring the surface topography of an optical interference type micro-machined wafer, which is applied to the optical interference type micro-machined wafer surface topography measuring device provided by the first embodiment to the fourth embodiment. In the embodiment, the method is mainly implemented by an industrial personal computer, and in the actual application process, the method can be implemented by other modules or units with intelligent processing functions, such as a computer. As shown in fig. 7, the method includes:
step 1: placing a wafer sample to be measured and adjusting an initial measurement position
In the initial state of the optical interference micromachined wafer surface morphology measuring device, the surface to be measured of the wafer sample to be measured is placed upwards in the center of the wafer sample table, the two-dimensional moving table is adjusted through the industrial personal computer, the measurement initial point of the surface to be measured is moved to the position of the vertical forward optical interference type sensing probe, then the industrial personal computer adjusts the z-axis coarse adjustment moving guide rail, and the optical interference type sensing probe is placed at the height of about 0.5mm above the measurement initial point of the surface to be measured.
In the measurement, a flat area of the surface to be measured, which is not etched, is recommended to be selected as a measurement initial point.
Step 2: opening the optical interference type sensing probe and finely adjusting the initial measurement state
(1) And starting the photoelectric element, starting the laser to drive by the industrial personal computer, and collecting interference light signals received by the light detectors by the industrial personal computer to obtain a voltage signal representing the light intensity.
(2) And adjusting the initial measurement height, controlling the z-axis fine adjustment moving table to move upwards by the industrial personal computer, continuously recording the voltage signal of the first optical detector in the process, and stopping moving when the surface to be measured moves to be within 0.5mm below the optical interference type sensing probe and the voltage signal change amplitude of the first optical detector is larger than a set threshold value.
(3) Fine-tuning the initial measurement state, controlling a phase adjusting layer in the optical interference type sensing probe by an industrial personal computer to enable the grating plane to translate within the wavelength range of +/-0.25 times of a laser, and continuously recording a first optical detector voltage signal V in the translation process 1 And a second photodetector voltage signal V 2 Peak-to-peak value V based on first photodetector voltage signal variation 1pp And a second photodetector voltage signal variation peak-to-peak value V 2pp Obtaining the voltage signal amplitude ratio k=v of the first photodetector and the second photodetector 1pp /V 2pp And adjusts the grating plane height h to the position of the orthogonal point d as shown in fig. 8 according to the voltage signal variation of the first photodetector. Wherein the intersection point d is the first photodetector voltage signal V 1 Points corresponding to 2 n+pi/2 (n is an integer) phases in the cosine relation along with the displacement of the grating plane. The measurement initial point height at this time was recorded as 0.
Step 3: conventional measurement of one-or two-dimensional surface topography
According to the measurement range setting, the industrial personal computer controls the two-dimensional moving platform to drive the z-axis fine-adjustment moving platform and the wafer sample platform fixed on the z-axis fine-adjustment moving platform to perform uniform scanning motion on a two-dimensional plane, the moving coordinates of the wafer sample platform at each moment are recorded, and meanwhile, the first optical detector of the optical interference type sensing probe acquires the output voltage signal V at a certain sampling rate 1 And a second photodetector outputs a voltage signal V 2 The measured surface height phase of each measurement coordinate point is calculated by combining the measured voltage signal amplitude ratio k of the first optical detector and the second optical detector in the industrial personal computer through the demodulation of the two voltage signalsAnd the change value of the height of the initial point is the conventional measurement result of the micro-morphology in the set range of the surface to be measured. Wherein the sampling rate of the photodetector signal is high enough to meet the accuracy requirements in the dynamic measurement process.
If fine measurement of local two-dimensional surface morphology is required to be performed in a set range, the preferred continuous scanning direction in the conventional measurement is the horizontal support direction (such as the y-axis direction in fig. 1) of the delay measuring device, so as to obtain continuous measurement data of the y-axis direction on each x-axis coordinate.
When demodulating the output voltage signal of the optical interference type sensing probe of each coordinate point, the first optical detector outputs the voltage signal V based on the voltage signal amplitude ratio k 1 And a second photodetector outputs a voltage signal V 2 The weighted sum is used for amplitude compensation of the demodulation of the subsequent optical interference signal. The subsequent demodulation operation of the optical interference signal can utilize the two diffraction order voltage signals to demodulate, and can also utilize a phase adjusting layer in the optical interference type sensing probe to modulate and demodulate a single voltage signal, and the specific details of the subsequent demodulation operation are the prior art, and can be seen in Chinese patent CN112816055B and Chinese patent CN114001661B.
Example six
The optical interference type micro-machined wafer surface morphology measuring method provided in the embodiment is applied to the optical interference type micro-machined wafer surface morphology measuring device provided in the first to fourth embodiments. The method is mainly used for carrying out fine measurement on the two-dimensional surface morphology of a specific position in a measured area. As shown in fig. 9, the method includes:
step 1: fine measurement of two-dimensional surface topography at specific locations within a measured area
(1) And (3) moving to a specific position to be measured, selecting fine measurement coordinates and a certain range around the fine measurement coordinates in a setting area where conventional measurement is performed by the industrial personal computer, and controlling the two-dimensional moving table to move the selected measurement coordinate point of the wafer sample table to the position right below the optical interference type sensing probe by the industrial personal computer.
(2) And (3) adjusting the measurement angle, obtaining the average slope of the surface height along the y-axis change in the set fine measurement range around the measurement coordinate point based on the conventionally measured surface height data, controlling the rotary driver to rotate by a corresponding angle delta by using the angle delta as a reference by the industrial personal computer, adjusting the plane of the optical interference type sensing probe to be parallel to the fine measurement area to be measured, and after determining the initial measurement position of the optical interference type sensing probe, adjusting and recording the initial measurement state according to the step (3) of the step (2) in the fifth embodiment.
(3) And (3) carrying out two-dimensional fine measurement, wherein the industrial personal computer controls the two-dimensional moving table to drive the wafer sample table to translate at a constant speed in the y-axis direction, and simultaneously controls the horizontal displacement piezoelectric driver to drive the optical interference type sensing probe to scan and translate rapidly in the transverse direction (namely the x-axis direction in fig. 2), simultaneously records the y-axis moving coordinate of the two-dimensional moving table and the transverse moving coordinate of the horizontal displacement piezoelectric driver in the process, continuously records the output voltage signal of the optical interference type sensing probe at a high sampling rate, and demodulates the output voltage signal to obtain the height of each coordinate point, namely the micro-morphology fine measurement result of the specific position of the surface to be measured.
In step (2) of the embodiment, according to the dimensional parameters of the probe mounting interface and the optical interference type sensing probe in the actual measurement module, when the industrial personal computer controls the rotation driver to rotate the angle of the optical interference type sensing probe, if necessary, the two-dimensional moving table and the z-axis fine adjustment moving table are controlled simultaneously, and according to the disclosure in step 1 and step 2 of the fifth embodiment, the optical interference type sensing probe is aligned to the initial coordinate point to be measured and the initial measurement height is adjusted.
In the step (3) of the embodiment, a conventional demodulation method of the single-wavelength optical interference signal can be selected according to the required measurement range to obtain a high-speed high-precision submicron morphology measurement result.
In the setting and scanning measurement process of the two-dimensional surface morphology fine measurement area, the required measurement area can be divided into a plurality of subdivision area arrays according to the effective lateral displacement limitation output by the horizontal displacement piezoelectric driver, fine measurement is carried out in each subdivision area according to the whole process of the step 1 of the embodiment, and then the fine measurement data in the arrays are spliced by combining the height change slopes of each subdivision area along the x axis and the y axis obtained from conventional measurement data.
Step 2: after the measurement is finished, the industrial personal computer automatically controls the z-axis coarse adjustment moving guide rail, the two-dimensional moving table, the z-axis fine adjustment moving table and the rotary driver to return to the initial position and the angle, and simultaneously cuts off the driving power supply of the phase adjusting layer and the power supply of the photoelectric element in the optical interference type sensing probe.
When the industrial personal computer automatically controls each moving module to restore to the initial measuring position, the z-axis rough adjusting moving guide rail is firstly controlled to lift the horizontal support to a sufficient height.
Compared with the prior art, the optical interference type micro-machined wafer surface morphology measuring device provided by the invention can be used for efficiently completing large-range plane sub-millimeter conventional measurement and also can be used for completing small-area inclined plane sub-micrometer fine measurement according to the morphology measuring requirement of a wafer surface micro-machined structure, and meanwhile, the stability and accuracy of the optical interference measuring device are improved specifically while high-sensitivity optical interference measurement is realized according to the combination of an optimized precise adjusting structure, a sensing probe structure and a demodulation compensation design of an adopted optical interference measuring method, so that the optical interference type micro-machined wafer surface morphology measuring device is specific:
(1) The phase adjusting layer in the optical interference type sensing probe is combined with the z-axis fine adjusting mobile station to perform sequential coarse adjustment and fine adjustment, the whole plane to be measured is placed in a high-efficiency measuring range in a standardized mode, the measuring effect of non-contact optical measurement is guaranteed, meanwhile, the initial measuring state of an orthogonal working point is obtained, and demodulation of optical interference signals in subsequent measurement is facilitated.
(2) The rotary driver and the horizontal displacement piezoelectric driver which are arranged in the measuring module area are specially used for realizing the submicron morphology high-precision measurement of the local inclined surface, and the horizontal displacement piezoelectric driver and the optical interference type sensing probe which is arranged by the horizontal displacement piezoelectric driver adopt the micro-electromechanical system technology, so that the size and the quality are much smaller than those of the conventional mechanical module, the rotation and the transverse scanning of the probe can be performed at high speed and high precision, and the high-precision measurement of the local inclined surface is realized efficiently.
(3) The diffraction effect of the grating is utilized in the optical interference type sensing probe, a conventional single optical interference signal is divided into a 0-order optical interference signal and other odd diffraction order optical interference signals which are in an opposite phase relation, the 0-order optical interference signal and the 1-order optical interference signal are received for detection output, and the obtained two opposite phase signals can be weighted and added through a fixed amplitude ratio to obtain the total light intensity change which participates in interference in real time and used for amplitude compensation in subsequent optical interference signal demodulation, so that the problem of measurement stability caused by interference of the optical interference signals due to the reflected light change of the surface to be measured is solved.
(4) In the measurement method, the surface topography data based on conventional measurement firstly obtains the surface height distribution to be measured with lower resolution, can meet the conventional measurement requirement on the wafer surface micro-machined structure, and on the basis, the conventional measurement data of the local area surface is utilized to calibrate the measurement angle, so that high-speed high-precision scanning measurement is performed, and the high-precision micro-topography measurement of the inclined surface is realized mainly by the measurement device.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (9)
1. The method is characterized by being applied to an optical interference type micro-machined wafer surface morphology measuring device; the method comprises the following steps:
placing a wafer sample to be measured and adjusting an initial measurement position;
starting an optical interference type sensing probe and acquiring an initial measurement state;
carrying out one-dimensional or two-dimensional surface morphology measurement on the wafer sample to be measured based on the initial measurement state to obtain a measurement result;
the method for starting the optical interference type sensing probe and acquiring the initial measurement state specifically comprises the following steps:
starting a laser, and collecting interference light signals received by the first light detector and the second light detector to obtain a voltage signal representing light intensity;
adjusting the initial measurement height, controlling the z-axis fine adjustment moving table to move upwards, continuously recording the voltage signal of the first optical detector in the moving process, and moving the surface of the wafer sample to be measured until the surface of the wafer sample to be measured is within 0.5mm from the lower part of the optical interference type sensing probe and the voltage signal change amplitude of the first optical detector is larger than a set threshold value, and stopping moving;
Controlling a phase adjusting layer in the optical interference type sensing probe to enable the grating plane to translate within the wavelength range of +/-0.25 times of the laser, and continuously recording a voltage signal of the first optical detector and a voltage signal of the second optical detector;
obtaining a voltage signal amplitude ratio based on the voltage signal of the first photodetector and the voltage signal of the second photodetector;
in the process of continuously recording the voltage signals of the first optical detector and the voltage signals of the second optical detector, the plane height of the optical grating is adjusted to the position of the right intersection point according to the voltage signal change of the first optical detector; the position of the positive intersection point is the position corresponding to the (2n+1) pi/2 phase in the cosine relation curve of the voltage signal of the first optical detector along with the displacement of the grating plane; wherein n is an integer;
the measurement initial point height was recorded as 0.
2. The method for measuring the surface topography of the optical interference type micro-machined wafer according to claim 1, wherein the measuring result is obtained by measuring the surface topography of a wafer sample to be measured in one or two dimensions based on the initial measuring state, and specifically comprises the following steps:
controlling a two-dimensional moving table to drive a wafer sample table to perform uniform scanning motion on a two-dimensional plane, recording moving coordinates of the wafer sample table at each moment, and collecting output voltage signals of a first optical detector and output voltage signals of a second optical detector in the optical interference type sensing probe at a set sampling rate;
And demodulating and calculating the change value of the surface height of the wafer sample to be measured at each measurement coordinate point relative to the height of the measurement initial point based on the voltage signal amplitude ratio, the output voltage signal of the first optical detector and the output voltage signal of the second optical detector, and obtaining the measurement result of the surface micro-morphology of the wafer sample to be measured.
3. The method for measuring the surface topography of an optical interference type micro-machined wafer according to claim 1, wherein the optical interference type micro-machined wafer surface topography measuring device comprises: the device comprises a base, a vertical support, a Z-axis rough adjustment moving guide rail, a horizontal support, a measuring module, a two-dimensional moving table, a Z-axis fine adjustment moving table and a wafer sample table;
one end of the vertical support is fixed on the base; a Z-axis rough adjustment moving guide rail is fixedly arranged at the other end of the vertical support; one end of the horizontal bracket is arranged on the Z-axis rough adjustment moving guide rail; a measuring module is arranged at the other end of the horizontal bracket; the Z-axis rough adjustment moving guide rail is used for adjusting the position of the horizontal bracket;
the two-dimensional mobile station is arranged on the base; the Z-axis fine adjustment mobile station is arranged on the two-dimensional mobile station; the wafer sample stage is arranged on the Z-axis fine adjustment moving stage; the center of the wafer sample stage and the center of the Z-axis fine adjustment mobile stage are positioned on the same normal line; the two-dimensional mobile station is used for adjusting the position of the Z-axis fine adjustment mobile station;
When the Z-axis fine adjustment mobile station is located at the center of the two-dimensional mobile station, the intersection point of the vertical direction of the center of the measurement module and the plane of the Z-axis fine adjustment mobile station is located at the center of the Z-axis fine adjustment mobile station along a long line, or the intersection point of the vertical direction of the center of the measurement module and the plane of the Z-axis fine adjustment mobile station along a long line is located within a preset range from the center of the Z-axis fine adjustment mobile station, the position of the Z-axis fine adjustment mobile station is adjusted through the two-dimensional mobile station, and the intersection point of the vertical direction of the center of the measurement module and the plane of the Z-axis fine adjustment mobile station along the long line can traverse all areas of the wafer sample station.
4. The method of claim 3, wherein the measurement module comprises: the device comprises a rotary driver, a horizontal displacement piezoelectric driver, a probe mounting interface and an optical interference type sensing probe;
one end of the rotary driver is arranged at the other end of the horizontal bracket; the other end of the rotary driver is connected with one end of the horizontal displacement piezoelectric driver; the normal line of the rotary driver is perpendicular to the normal line of the horizontal displacement piezoelectric driver; the other end of the horizontal displacement piezoelectric driver is connected with the probe mounting interface; the optical interference type sensing probe is installed in the probe installation interface.
5. The method of claim 4, wherein the horizontally-displaced piezoelectric actuator comprises: an elastic support and a piezoelectric layer;
one end of the elastic support is connected with the other end of the rotary driver; the other end of the elastic support is connected with the probe mounting interface; the piezoelectric layer is arranged on one end of the elastic support.
6. The method of claim 5, wherein the resilient support comprises: a first curved beam and a second curved beam;
one end of the first curved beam and one end of the second curved beam are converged to form a head connected with the rotary driver; the other end of the first curved beam and the other end of the second curved beam are converged to form an end head connected with the probe mounting interface; the inner space formed by the first curved beam and the second curved beam is an equilateral parallelogram; the thickness of one end of the first curved beam is smaller than that of the other end of the first curved beam; the thickness of one end of the second curved beam is smaller than that of the other end of the second curved beam; and one end of the first curved beam and one end of the second curved beam connected with the first curved beam are both provided with piezoelectric layers.
7. The method for measuring the surface topography of an optical interference type micro-machined wafer according to claim 4, wherein the optical interference type sensing probe comprises: the device comprises a grating, a phase adjusting layer, an optical path assembly seat, a first collimating head, a second collimating head, a first optical detector, a second optical detector and a laser;
one end face of the grating faces the wafer sample stage; one end face of the phase adjusting layer is arranged on the other end face of the grating; the phase adjusting layer is of a hollow structure so as to form a grating diffraction light transmission space; the light path assembly seat is arranged on the other end face of the phase adjusting layer; the first collimating head and the second collimating head are both arranged in the light path assembly seat; the second optical detector is connected with the second collimating head through a single-mode optical fiber; the first optical detector and the laser are connected with the first alignment head through single-mode optical fibers.
8. The method of claim 3, wherein the two-dimensional moving stage comprises two electrically controlled moving rails in orthogonal directions.
9. A method for measuring the surface morphology of an optical interference type micromachined wafer, the method comprising:
Acquiring the surface height of a wafer sample to be tested; the surface height of the wafer sample to be measured is measured by the optical interference type micro-machined wafer surface morphology measuring method according to any one of claims 1-8;
selecting a measurement coordinate point in a region to be finely measured, and controlling a two-dimensional moving table to move the selected measurement coordinate point to the position right below the optical interference type sensing probe; the area to be finely measured is a selected area on the surface of the wafer sample to be measured, and the surface height rough measurement data of the area are measured by adopting the optical interference type micro-machined wafer surface morphology measurement method according to any one of claims 1-8;
obtaining an average slope of the surface height of the wafer sample to be measured along the y-axis within a set measurement range by taking the selected measurement coordinate point as the center based on the surface height data of the wafer sample to be measured;
converting the average slope into an included angle between the optical interference type sensing probe and the horizontal direction, controlling the rotation driver to rotate according to the included angle so as to drive the optical interference type sensing probe to rotate, adjusting the plane of the optical interference type sensing probe to be parallel to the area to be measured finely, and starting the optical interference type sensing probe and acquiring the initial measurement state of the area to be measured finely after determining the initial measurement position of the optical interference type sensing probe;
Carrying out one-dimensional or two-dimensional surface morphology measurement on the area to be finely measured based on the initial measurement state to obtain a measurement result;
in the one-dimensional or two-dimensional surface topography measurement of the area to be measured, the horizontal displacement piezoelectric driver drives the optical interference type sensing probe to move so as to realize the rapid scanning in the x-axis direction.
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