CN116288208A - Method for improving stability of sputter coating - Google Patents
Method for improving stability of sputter coating Download PDFInfo
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- CN116288208A CN116288208A CN202310280854.9A CN202310280854A CN116288208A CN 116288208 A CN116288208 A CN 116288208A CN 202310280854 A CN202310280854 A CN 202310280854A CN 116288208 A CN116288208 A CN 116288208A
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 109
- 238000000576 coating method Methods 0.000 claims abstract description 57
- 239000011248 coating agent Substances 0.000 claims abstract description 54
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000013077 target material Substances 0.000 claims description 22
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 43
- 230000009467 reduction Effects 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of semiconductors and provides a method for improving the stability of a sputtering coating, which comprises the steps of calculating the distance variation of a target and a substrate through the initial thickness, the target utilization rate, the actual service life and the limiting service life of the target in the process of sputtering coating, moving the substrate upwards by d when the distance variation of the target and the substrate reaches a specified d, recovering the distance between the target and the substrate to h, and repeating the step of adjustment to finally prepare the film; the method of the invention ensures that the distance between the target and the substrate is kept unchanged in the mass production process of the sputtering coating, d is calculated through the actual service life of the target, the time for adjusting the distance between the target and the substrate is accurately controlled, the stability of the sputtering coating is improved, the film quality characteristics of the prepared film are consistent, the method is especially suitable for the semiconductor field with strict requirements on the film, and the device characteristics of semiconductor products can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for improving stability of sputter coating.
Background
The magnetron sputtering coating has the advantages of low substrate temperature, pure film quality, uniform and compact structure, good firmness, good repeatability and the like, and is widely applied to the industries of semiconductors, solar energy, panel display and the like. The working principle of the magnetron sputtering coating film is as follows: ar is formed by Ar atoms under the action of an electric field + And electrons, ar + The sputtering is carried out on the target material by the electric field acceleration and the surface of the target material is bombarded by high energy, so that the sputtering is carried out on the target material, and the sputtered neutral target atoms or molecules are deposited on the substrate to form a film.
In the process of magnetron sputtering coating, a proper distance needs to be kept between the target and the substrate, and if the distance is changed in the coating process, the uniformity of film formation and the film quality can be affected, so that the stability of the sputtering coating is reduced. Generally, in the initial stage of production, the distance between the target and the substrate is relatively small; as production proceeds, the thickness of the target becomes thinner, the thickness of the film on the surface of the substrate is almost negligible, the distance between the target and the substrate is gradually increased, the path of sputtered target particles reaching the substrate is increased, the energy attenuation is increased, the energy reaching the substrate is reduced, the uniformity of the deposited film is possibly deteriorated, the grain size of the film is reduced, and the like, so that the stability of the deposited film of the magnetron sputtering device is deteriorated. Therefore, development of a method for sputter coating is needed to improve the stability of the sputtered film during the production process and maintain the uniformity of the film in an optimal state.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems in the prior art described above. Therefore, the invention provides a method for improving the stability of the sputtering coating, which can ensure that the uniformity of the deposited film is good, the uniformity of the film can even reach 5.14 percent, the grain size of the film can not be reduced, and the stability of the sputtering coating is good.
A first aspect of the present invention provides a method of improving stability of sputter coating.
Specifically, the method for improving the stability of the sputtering coating comprises the following steps:
the sputtering coating is carried out in a sputtering coating chamber, the sputtering coating chamber comprises a target and a substrate, the target and the substrate are placed in parallel, the distance between the target and the substrate is h, the sputtering coating is carried out, the distance change d between the target and the substrate is calculated according to a formula (I), and when the distance change d between the target and the substrate is reached along with the progress of the sputtering coating, the substrate is moved d towards the target, so that the distance between the target and the substrate is restored to h; d is 0.5-1.5mm;
d=initial thickness of target material x target material utilization rate x actual service life of target material/ultimate service life of target material.
In the process of sputtering coating, the distance between the target and the substrate is smaller, but as production proceeds, the target is gradually consumed, the target becomes thinner, the increased thickness of the film on the substrate is almost negligible, the distance between the target and the substrate becomes larger gradually, the path of sputtered target ions reaching the substrate is prolonged, the energy attenuation of the target ions becomes larger, the energy reaching the substrate is reduced, the uniformity of the prepared deposited film is poor, the grain size of the film becomes smaller, and the stability of the sputtering coating is poor. In the process of sputtering coating, the invention enables the original continuously enlarged spacing between the target and the substrate to be restored to the original spacing by adjusting the position of the substrate, thereby avoiding the deterioration of the uniformity of the film, the reduction of the grain size of the film and the deterioration of the stability of the sputtering coating. In addition, since the target is continuously consumed after a period of sputtering coating, the surface of the target is not flat, and if the distance between the target and the substrate is adjusted according to the use time of the target, the method is equivalent to blind adjustment, the actual loss of the target is related to both the sputtering energy and the use time (under the same sputtering time, the larger the sputtering energy is, the faster the target is lost), and the use time of the target is taken as the basis, so that the method is extremely inaccurate. Therefore, the invention calculates the average thickness reduction d of the target through the initial thickness of the target, the actual service life of the target (namely the actual consumption of the target) and the ultimate service life of the target, namely, the d is set according to the actual process condition and specification, the thickness reduction of the target is equal to the distance variation of the target and the substrate, thereby determining the adjustment quantity of the jacking structure, more accurately controlling the sputtering coating, improving the stability, leading the prepared film to be more uniform and leading the size of the film grain to be smaller. If d is too small, the data processing capacity of the control system of the jacking mechanism can be increased, meanwhile, the number of the point positions of the jacking mechanism is too large, point position correction in the equipment maintenance process is not facilitated, the accuracy of equipment is finally affected, the adjustment timing is advanced or delayed, and the stability of sputtering coating is affected. If d is too large, the load on the equipment side is reduced, but film uniformity and film quality are reduced.
In the magnetron sputtering coating industry, the service life of the target is expressed by kw.h, and the larger the power is, the larger the loss of the target is in the same time, and the larger the reduction d of the thickness of the target is.
Preferably, the moving d of the substrate to the target is realized through a jacking structure, the substrate is placed on one surface of the substrate table, then the jacking structure is arranged on the other surface of the substrate table, and a first structure sequentially comprising the substrate, the substrate table and the jacking structure is obtained, and the jacking structure can move the substrate table.
Preferably, the target is bound and connected to the target backboard to obtain the second structure.
Preferably, the first structure and the second structure are both positioned in the sputtering coating chamber, the second structure is positioned above the sputtering coating chamber, the first structure is positioned below the sputtering coating chamber, and the sputtering coating chamber sequentially comprises a target backboard, a target, a substrate table and a jacking structure from top to bottom.
According to the invention, the jacking structure capable of moving up and down is arranged below the substrate table connected with the substrate, when the distance between the target and the substrate is increased, the jacking structure can be adjusted to ascend, so that the horizontal height of the substrate is lifted, the target and the substrate are close, and the distance between the target and the substrate is restored.
Preferably, the distance between the target and the substrate is the vertical distance between the lower surface of the target and the upper surface of the substrate.
Preferably, the sputter coating comprises magnetron sputtering and/or laser sputtering.
In the debugging process of the sputtering coating equipment, the target material and the substrate have an initial distance, namely h, and the initial distance is too small or too large, so that the uniformity of the film can be affected to a certain extent.
Preferably, h is 100-120mm.
Further preferably, the h is 105-115mm.
More optionally, h is 108-110mm.
Preferably, d is 0.8-1.2mm.
Further preferably, d is 1-1.2mm.
Preferably, the thickness of the target is 5-25mm.
Further preferably, the thickness of the target is 7-10mm.
Preferably, the ultimate service life of the target is 4000-20000 kw.h. The ultimate service life of the target is related to the thickness and the utilization rate of the target, and the thicker the target or the higher the utilization rate of the target, the larger the ultimate service life value of the target.
Further preferably, the ultimate service life of the target is 6000-20000 kw.h.
Preferably, the actual service life of the target is accumulated through the equipment end of the sputtering coating.
Preferably, the target is a planar target.
The target utilization is mainly determined by the sputtering equipment. In the magnetron sputtering coating industry, the utilization rate of the planar target is generally 30-45%, and the utilization rate of the cylindrical target is 60-80%; the higher the target utilization ratio is, the better.
Preferably, after the distance between the target and the substrate is restored to h, the target is continuously consumed, when d reaches 0.8-1.2mm again, the substrate is moved d again, the distance between the target and the substrate is restored to h, and the steps are repeated until the thin film is manufactured.
The second aspect of the invention provides an application of the method for improving the stability of the sputtering coating.
A method for improving the stability of sputter coating is applied in the field of semiconductors.
Compared with the prior art, the invention has the following beneficial effects:
(1) In the process of sputtering coating, the invention calculates the distance variation d between the target and the substrate through the initial thickness, the target utilization rate, the actual service life and the limiting service life of the target, when the distance variation d between the target and the substrate reaches the appointed 0.5-1.5mm, the substrate is moved upwards by d, the distance between the target and the substrate is restored to h, the target is continuously consumed, and when d reaches the appointed length, the steps of adjusting are repeated, and finally the film is prepared; the method ensures that the distance between the target and the substrate is basically kept unchanged in the mass production process of the sputtering coating, thereby avoiding the uniformity deterioration of the film, the grain size of the film is reduced, the stability of the sputtering coating is deteriorated, and the uniformity of the film prepared by the method can even reach 5.14%; in addition, d is calculated by utilizing the initial thickness of the target, the utilization rate of the target, the actual service life of the target and the ultimate service life of the target, and the time for adjusting the distance between the target and the substrate is accurately mastered;
(2) According to the invention, the jacking structure capable of moving up and down is arranged below the substrate table, so that the substrate table can move up and down, d can be regulated more conveniently and rapidly, and the best time for regulating the distance between the target and the substrate can be avoided from being missed;
(3) The sputtering coating method provided by the invention can improve the stability of the sputtering coating, and the prepared film has good uniformity and consistent film quality characteristics, is especially suitable for the semiconductor field with strict requirements on the film, and can improve the device characteristics of semiconductor products.
Drawings
FIG. 1 is a diagram showing the internal structure of a sputtering coating chamber in the step (1) of the embodiment 1 of the present invention;
FIG. 2 is a diagram showing the internal structure of a sputtering coating chamber in the step (2) of the embodiment 1 of the present invention;
FIG. 3 is a schematic view showing the internal structure of the sputtering coating chamber in the step (3) of the embodiment 1 of the present invention.
Detailed Description
In order to make the technical solutions of the present invention more apparent to those skilled in the art, the following examples will be presented. It should be noted that the following examples do not limit the scope of the invention.
The starting materials, reagents or apparatus used in the following examples are all available from conventional commercial sources or may be obtained by methods known in the art unless otherwise specified.
Example 1
A method for improving stability of magnetron sputtering coating comprises the following steps:
(1) Taking a glass substrate with the thickness of 730mm multiplied by 920 multiplied by 0.5mm as a substrate, taking the substrate as an anode, placing the substrate on a substrate table, and then arranging a jacking structure below the substrate table to obtain a first structure which is sequentially provided with the substrate, the substrate table and the jacking structure from top to bottom, and moving the substrate table up and down by moving the jacking structure so as to control the horizontal height of the substrate;
adopting a 4.5 generation line magnetron sputtering coating machine, wherein the target size is 1130mm multiplied by 1200mm multiplied by 10mm; using a Cu target material, wherein the target material is used as a cathode, and is bound and connected to a target material backboard to obtain a second structure; the thickness of the target material is 10mm, the target material utilization rate is 40%, and the ultimate service life of the target material is 6000 kw.h;
the first structure and the second structure are both positioned in the sputtering coating chamber, the first structure is positioned below the sputtering coating chamber, the second structure is positioned above the sputtering coating chamber, and the sputtering coating chamber sequentially comprises a target backboard, a target, a substrate table and a jacking structure from top to bottom;
(2) The distance between the target and the substrate is h=110mm, sputtering coating is carried out, along with the use of the target, the average thickness of the target is thinner and the distance between the target and the substrate is larger, when the actual service life of the accumulated target at the equipment end reaches 1500 kw.h, the distance variation of the target and the substrate is calculated to be d=1mm according to the formula (I), and the substrate is lifted upwards by using a lifting structure at the moment, so that the substrate moves upwards by d=1mm, and the distance between the target and the substrate is restored to h=110mm;
d=initial thickness of target material x target material utilization rate x actual service life of target material/ultimate service life of target material.
(3) In the subsequent magnetron sputtering coating process, the method of the step (2) is adopted, d is calculated according to the formula (I) while sputtering coating, and the distance between the substrate and the target is adjusted every time d=1 mm until the film is prepared.
The internal structure of the sputtering coating chamber in the step (1) is shown in fig. 1, and includes a first structure and a second structure, which sequentially include a target backboard, a target, a substrate table and a jacking structure from top to bottom, wherein the vertical distance between the lower surface of the target and the upper surface of the substrate (i.e. the distance between the target and the substrate) is h.
As shown in fig. 2, the sputtering film is consumed over a period of time, the thickness of the target becomes gradually smaller, and when the thickness of the target is reduced to d, the distance between the target and the substrate increases to (h+d) as calculated by the formula (i).
As shown in fig. 3, the invention lifts the lifting mechanism to a certain height, and lifts the substrate table through the lifting structure, so that the distance between the substrate and the target is reduced, the distance is restored to h, and the distance between the target and the substrate is kept unchanged.
A Cu film of 500nm thickness was deposited on the substrate for measuring the sheet resistance thereof.
Comparative example 1
The difference from example 1 is that the target lifetime is consumed to 4500kw.h, d becomes 3mm, so the target and substrate spacing becomes h+d=113 mm, and the operation of adjusting the spacing between the target and the substrate is not performed.
Product effect test
1. Test method
Film uniformity: after Cu film deposition was completed, the sheet resistance at 35 points on the substrate surface was tested using a 4-probe, and the average sheet resistance and film uniformity were calculated.
Film uniformity (%) = (maximum sheet resistance-minimum sheet resistance)/(maximum sheet resistance + minimum sheet resistance) ×100.
2. Test results
Table 1 test results
Remarks: the "initial values" in table 1 are the average sheet resistance and film uniformity of the sputter deposition of the substrate measured in example 1 before the first adjustment of the target to substrate spacing.
In the process of sputtering coating, the distance between the target and the substrate is always kept at 110mm by adjusting in the embodiment 1, and the prepared film has small square resistance, good uniformity and stability and almost consistent initial value. It can be seen that, through process debugging, when the uniformity of the film reaches the best, the distance h between the target and the substrate=110 mm.
In contrast, in comparative example 1, when the distance between the target and the substrate was 113mm without adjusting the distance between the target and the substrate during the sputtering, the sheet resistance of the deposited Cu film was increased and the film uniformity was deteriorated as compared with the initial value and example 1.
Claims (10)
1. A method for improving the stability of sputter coating is characterized by comprising the following steps:
the sputtering coating is carried out in a sputtering coating chamber, the sputtering coating chamber comprises a target and a substrate, the target and the substrate are placed in parallel, the distance between the target and the substrate is h, the sputtering coating is carried out, the distance change d between the target and the substrate is calculated according to a formula (I), and when the distance change d between the target and the substrate is reached along with the progress of the sputtering coating, the substrate is moved d towards the target, so that the distance between the target and the substrate is restored to h; d is 0.5-1.5mm;
d=initial thickness of target material x target material utilization rate x actual service life of target material/ultimate service life of target material.
2. The method for improving stability of sputter coating according to claim 1, wherein the moving d of the substrate to the target is realized by a jacking structure, the substrate is placed on one surface of the substrate table, and then the jacking structure is arranged on the other surface of the substrate table, so as to obtain a first structure which is sequentially the substrate, the substrate table and the jacking structure, and the jacking structure can move the substrate table.
3. The method for improving stability of sputter coating according to claim 2, wherein the target is bonded to the target backing plate to obtain the second structure.
4. The method for improving stability of sputter coating according to claim 3, wherein the first structure and the second structure are both positioned in a sputter coating chamber, the second structure is positioned above the sputter coating chamber, the first structure is positioned below the sputter coating chamber, and the sputter coating chamber comprises a target backing plate, a target, a substrate table and a jacking structure from top to bottom.
5. The method for improving the stability of a sputter coating according to claim 1, characterized in that the sputter coating comprises magnetron sputtering and/or laser sputtering.
6. The method for improving the stability of a sputter coating according to claim 1, wherein h is 100-120mm.
7. The method for improving the stability of a sputter coating according to claim 1, wherein d is 0.5 to 1.5mm.
8. The method for improving the stability of sputter coating according to claim 1, wherein the initial thickness of the target is 5-25mm.
9. The method for improving the stability of a sputter coating according to claim 1, wherein the ultimate service life of the target is 4000-20000 kw.h.
10. Use of the method for improving the stability of sputter coating according to any of claims 1 to 9 in the semiconductor field.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000064037A (en) * | 1998-08-25 | 2000-02-29 | Showa Shinku:Kk | Control of distribution of film thickness in sputtering device and device therefor |
| US6416635B1 (en) * | 1995-07-24 | 2002-07-09 | Tokyo Electron Limited | Method and apparatus for sputter coating with variable target to substrate spacing |
| CN102965636A (en) * | 2011-09-01 | 2013-03-13 | 上海华力微电子有限公司 | Device and method for stabilizing thickness of physical vapor deposition film |
| US20160056024A1 (en) * | 2014-08-22 | 2016-02-25 | Applied Materials, Inc. | Methods and apparatus for maintaining low non-uniformity over target life |
| CN109616569A (en) * | 2017-09-12 | 2019-04-12 | Spts科技有限公司 | SAW device and manufacturing method and electronic circuit and electronic device including it |
-
2023
- 2023-03-13 CN CN202310280854.9A patent/CN116288208A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6416635B1 (en) * | 1995-07-24 | 2002-07-09 | Tokyo Electron Limited | Method and apparatus for sputter coating with variable target to substrate spacing |
| JP2000064037A (en) * | 1998-08-25 | 2000-02-29 | Showa Shinku:Kk | Control of distribution of film thickness in sputtering device and device therefor |
| CN102965636A (en) * | 2011-09-01 | 2013-03-13 | 上海华力微电子有限公司 | Device and method for stabilizing thickness of physical vapor deposition film |
| US20160056024A1 (en) * | 2014-08-22 | 2016-02-25 | Applied Materials, Inc. | Methods and apparatus for maintaining low non-uniformity over target life |
| CN109616569A (en) * | 2017-09-12 | 2019-04-12 | Spts科技有限公司 | SAW device and manufacturing method and electronic circuit and electronic device including it |
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