CN113793900A - AZO film-based resistive random access memory and preparation method thereof - Google Patents
AZO film-based resistive random access memory and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 230000008859 change Effects 0.000 claims abstract description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011787 zinc oxide Substances 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 60
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- 238000000137 annealing Methods 0.000 claims description 30
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- 239000012535 impurity Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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Abstract
The invention belongs to the technical field of microelectronics, and discloses a resistive random access memory based on a zinc oxide aluminum-doped (AZO) film and a preparation method thereof, wherein the resistive random access memory is of a laminated structure and comprises a resistive layer and a substrate which are sequentially arranged, wherein a top electrode is arranged on the resistive layer: the substrate is provided with a bottom electrode; the substrate is a p-Si substrate, and the resistance change layer is an AZO film. The preparation method is simple and low in cost. The resistance change characteristic of the resistive random access memory is tested to obtain an I-V curve, the switching performance of the resistive random access memory is good and can reach two orders of magnitude, the ratio of the resistance values of high and low resistance states can reach 20, and the good resistance change characteristic is still maintained under 100-time cycle test.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to an AZO film-based resistive random access memory and a preparation method thereof.
Background
The zinc oxide can provide a broadband direct band gap of about 3.4eV at normal temperature. The larger the forbidden band width, the poorer the conductivity of the semiconductor material due to the smaller number of free electrons, and zinc oxide, as one such wide-forbidden band semiconductor, is unlikely to excite valence band electrons into the conduction band at room temperature. After Al element is doped, more carriers are generated at the bottom of a zinc oxide conduction band, the Fermi level is increased, the resistivity of the zinc oxide is reduced, the conductance is increased, the energy band drifts towards the low-energy direction, and N-type conduction is utilized.
The method is a mature technology for preparing the AZO film by adopting the zinc oxide aluminum-doped (AZO) ceramic target and depositing in an argon-oxygen proportional mixed environment, and the film prepared by the magnetron sputtering method has relatively good flatness, transparency and compactness. The component proportion of each component of the film is controlled by controlling the introduction amount of oxygen, the film can be synthesized at low temperature without heating operation, is environment-friendly and is beneficial to the preparation of large-area films. The AZO film has the characteristics of no toxicity, no pollution, low cost and good thermal stability, and is therefore of great interest to researchers. AZO has been widely used in the fields of solid state lighting and displays, catalytic and catalyst supports, Ultraviolet (UV) photovoltaic devices, spacecraft thermal control coatings, and microwave dielectric devices.
With the rapid development of technology, the conventional ram cannot meet the requirements of high-speed information processing technology on the density and speed of the memory device due to the defects of easy loss, slow read/write speed and the like. For this reason, new nonvolatile memories, such as phase change memories, magnetoresistive memories, ferroelectric memories, and phase change memories, having higher operating speeds, higher memory densities, lower costs, and lower power consumption have been studied. Among them, the resistive random access memory is considered to be the most powerful competitor of the next generation memory due to its advantages of simple structure, fast erasing speed, good fatigue resistance, etc., and especially, the oxide-based resistive random access memory has attracted attention in recent years.
The typical memory structure of the resistive random access memory is generally a metal-resistive layer-metal "sandwich structure", and information is stored by using resistance value change. The I-V curve is the clearest and simplest way for determining whether a prepared device has the characteristics of a resistive random access memory or whether the resistance value can be converted between a high resistance value and a low resistance value along with the change of the voltage value.
However, most resistive random access memories have the problems of unobvious high and low resistance states, small ratio of high to low resistance states, poor fatigue resistance and the like, and cannot be really and widely applied to information storage products.
Disclosure of Invention
In order to overcome the defects and shortcomings in the prior art, the invention aims to provide an AZO thin film-based resistive random access memory and a preparation method thereof.
The specific technical scheme is as follows:
the first aspect of the embodiments of the present invention firstly provides an AZO thin film-based resistive random access memory, where the resistive random access memory is a stacked structure, and includes a resistive layer and a substrate, which are sequentially arranged, where a top electrode is disposed on the resistive layer: the substrate is provided with a bottom electrode; the substrate is a p-Si substrate, and the resistance change layer is an AZO film.
In the embodiment of the invention, the thickness of the AZO film is 40-60 nm.
In an embodiment of the present invention, the top electrode is one or more of Au, Al, Ag, W, TiN, or Pt.
In an embodiment of the present invention, the bottom electrode is Au, Al, TiN or Pt.
In a second aspect of the embodiments of the present invention, there is also provided a method for manufacturing a resistive random access memory based on an AZO thin film, where the method for manufacturing a resistive random access memory based on an AZO thin film includes the following specific steps:
s1, pretreating the surface of an AZO ceramic target;
s2, using HF dilute solution to generate SiO on the surface of the p-Si substrate2Removing the layer, then ultrasonically cleaning the layer by using absolute ethyl alcohol, and fixing the substrate on a tray after the surface is dried;
s3, turning on a main power supply of the magnetron sputtering equipment, turning on circulating water, turning on an inflation valve, installing the target material and the tray, and closing the inflation valve; starting a mechanical pump and vacuumizingOpening the vacuum gauge, and stably reducing the pressure in the cavity to be below 10 Pa; opening the molecular pump, regulating and controlling the plate valve of the molecular pump, and waiting for the pressure in the cavity to be reduced to 10-2Pa below; opening gas cylinder valve, opening gas flowmeter, opening gas charging valve, introducing Ar and O into the cavity2(ii) a A plate valve is adjusted, and the vacuum degree in the cavity is kept at 4.5-5.5 Pa; turning on a radio frequency power supply, and turning on a filament switch for preheating;
s4, preparing to glow, adjusting power, keeping the voltage at 0.5-0.8 kV and the current at 280-320 mA, carrying out pre-sputtering cleaning, removing impurities on the surface of the target material, and then removing a baffle to begin magnetron sputtering deposition of an AZO film;
s5, after sputtering is finished, closing a power supply of the equipment according to a program, and taking out the p-Si substrate deposited with the AZO film;
s6, placing the sputtered AZO film into a rapid annealing furnace, and annealing in an air atmosphere;
and S7, at normal temperature, placing the prepared AZO film under a metal mask plate with a phi 0.05mm round hole array, and respectively plating a layer of metal Au point electrode on the AZO film and the surface of the substrate by a magnetron sputtering method to obtain the resistive random access memory based on the AZO film.
In the embodiment of the present invention, the content of aluminum in the AZO ceramic target material in step S1 is 10%.
In the embodiment of the present invention, in step S3, the Ar: o is2The gas flow ratio of (2) is 40: 10.
In the embodiment of the present invention, Ar and O are provided in step S32The gas is high-purity gas, and the gas is mixed before entering the vacuum cavity or respectively enters the vacuum cavity and then is mixed.
In the embodiment of the invention, the preheating time in the step S3 is 5-8 min.
In the embodiment of the invention, the time of the pre-sputtering in the step S4 is 10-15 min, and the time of the magnetron sputtering is 30-40 min.
In the embodiment of the invention, the pretreatment of the surface of the AZO ceramic target comprises wiping impurities on the surface of the AZO ceramic target by using abrasive paper, and then cleaning the target by using absolute ethyl alcohol.
In the embodiment of the present invention, the target base distance in the pre-sputtering and magnetron sputtering in step S4 is 70 mm.
In the embodiment of the present invention, the annealing temperature in step S6 is 700 ℃, and the annealing time is 15 min.
Compared with the prior art, the invention has the following advantages:
firstly, the resistance random access memory prepared by the invention takes the AZO film as a resistance random layer, the specific energy of a switch can reach two orders of magnitude, the specific energy of the resistance values of high and low resistance states can reach 20, and the resistance random access memory still keeps good stability under 100-time cycle test and has good resistance random effect.
Secondly, the resistive random access memory is prepared by adopting a magnetron sputtering method, the preparation process is simple, the cost is low, and the method is suitable for large-scale production.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
Fig. 1 is a schematic structural diagram of an AZO film-based resistive random access memory provided by the invention;
FIG. 2 is an I-V curve of a test after applying a + -8V bias to the AZO thin film-based resistive random access memory manufactured at the annealing temperature of 700 ℃ in example 1;
FIG. 3 is a high-low resistance state distribution diagram of the AZO thin film-based resistive random access memory read at +4V, prepared at an annealing temperature of 700 ℃ in example 1;
FIG. 4 is an I-V graph of a test after applying a bias of + -4V to the AZO thin film-based resistive random access memory manufactured without annealing treatment in comparative example 1; and
fig. 5 is a high-low resistance state distribution diagram of the AZO thin film-based resistive random access memory prepared in comparative example 1 without annealing in +2V reading.
In the drawings:
101. a top electrode; 102. A bottom electrode;
201. a resistance change layer; 202. A substrate.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between the various embodiments can be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should be considered to be absent and not be within the protection scope of the present invention.
In order to solve the problems that the existing resistive random access memory has unobvious high and low resistance states, small ratio of the high to low resistance states and poor fatigue resistance, the embodiment of the invention provides a resistive random access memory based on an AZO film and a preparation method thereof. The resistive random access memory provided by the invention is a nonvolatile memory which can realize reversible conversion between a high resistance state and a low resistance state by using the resistance of a material under the action of an external electric field. The resistive random access memory tries to adopt the AZO film as a resistive layer, and aims to change the fatigue degree and reliability of the resistive random access memory.
Referring to fig. 1, in an embodiment of the present invention, first, a resistive random access memory based on an AZO thin film is provided, where the resistive random access memory is a stacked structure, and includes:
a top electrode 101;
a bottom electrode 102;
a resistance change layer 201 connecting the top electrode 101 and the bottom electrode 102; and
a substrate 202;
the substrate 202 is a p-Si substrate, and the resistance change layer 201 is an AZO thin film.
It will be appreciated that the top electrode 101 and the bottom electrode 102 may be connected to a measurement device to perform a test to obtain relevant parameters to verify the extent of the implementation of the AZO film.
Specifically, in the embodiment of the present invention, the resistive layer 201 and the substrate 202 are sequentially arranged in a stacked manner, that is, the resistive layer 201 is disposed on the upper side of the substrate 202, the top electrode 101 and the bottom electrode 102 are respectively disposed on the resistive layer 201 and the substrate 202, and the top electrode 101 and the bottom electrode 102 are made of a conductive material to achieve electrical conduction.
It can be understood that in the device manufacturing process of the resistive random access memory, in order to protect the thin film form of the active layer from being damaged, most devices adopt a flip-chip structure. The source electrode and the drain electrode can be in bottom contact or top contact, wherein the bottom contact is called a bottom electrode, and the top contact is called a top electrode.
Furthermore, the thickness of the AZO film is 40-60 nm.
Still further, the top electrode 101 includes at least one of Au, Al, Ag, W, Ti, TiN, or Pt.
The bottom electrode 102 is Au, Al, TiN or Pt.
The materials of the top electrode 101 and the bottom electrode 102 may be designed according to practical experience, and only the resistance change memory may satisfy the use condition.
Continuing to refer to fig. 1, a schematic diagram of a resistive random access memory based on the AZO thin film provided by the present invention is shown. In the general inventive concept, the resistive random access memory is a laminated structure consisting of a top electrode 101, a resistive layer 201, a substrate 202 and a bottom electrode 102, the device is simple to prepare, an AZO film is sputtered on a p-Si substrate, and then a metal Au point electrode is respectively plated on the AZO film and the surface of the substrate to obtain a basic MIM sandwich structure.
In order to implement the above general inventive concept, an embodiment of the present invention provides a method for manufacturing a resistive random access memory based on an AZO thin film, including the following specific steps:
s1, pretreating the surface of an AZO ceramic target;
s2, using HF dilute solution to generate SiO on the surface of the p-Si substrate2Removing the layer, then ultrasonically cleaning the layer by using absolute ethyl alcohol, and fixing the substrate on a tray after the surface is dried;
s3, adopting a sputtering coating reaction chamber with a cavity inside, and forcibly pumping the pressure in the cavity to 10 ℃ by using a molecular pump-2Introducing Ar and O into the cavity after Pa is lower2Adjusting the vacuum degree in the cavity to be 4.5-5.5 Pa, and preheating;
s4, preparing to glow, adjusting power, keeping the voltage at 0.5-0.8 kV and the current at 280-320 mA, carrying out pre-sputtering cleaning, removing impurities on the surface of the target material, and then removing a baffle to begin magnetron sputtering deposition of an AZO film;
s5, after sputtering is finished, closing a power supply of the equipment according to a program, and taking out the p-Si substrate deposited with the AZO film;
s6, placing the sputtered AZO film into a rapid annealing furnace, and annealing in an air atmosphere;
and S7, at normal temperature, placing the prepared AZO film under a metal mask plate with a phi 0.05mm round hole array, and respectively plating a layer of metal Au point electrode on the film and the substrate surface by a magnetron sputtering method to obtain the AZO film-based resistive random access memory.
In step S1, the surface of the AZO ceramic target may be pretreated by wiping impurities on the surface of the AZO ceramic target with sand paper, and then cleaning the target with absolute ethanol.
In step S3, a sputter coating chamber with a cavity therein is used, and the pressure in the cavity is pumped to 10 degrees by a molecular pump-2Introducing Ar and O into the cavity after Pa is lower2The vacuum degree in the cavity is adjusted to be 4.5-5.5 Pa, and preheating can include:
step S31, turning on a main power supply of the magnetron sputtering equipment, turning on circulating water, turning on an inflation valve, loading a target material and a tray, and closing the inflation valve; starting a mechanical pump, vacuumizing, starting a vacuum gauge, and when the pressure in the cavity is stably reduced to be below 10 Pa;
step S32, starting the molecular pump, regulating and controlling the molecular pump plate valve, and waiting for the pressure in the cavity (also called sputtering coating reaction chamber) to be reduced to 10-2Pa below;
step S33, opening the cylinder gas valve, opening the gas flowmeter, opening the gas charging valve, and introducing Ar and O into the cavity2(ii) a A plate valve is adjusted, and the vacuum degree in the cavity is kept at 4.5-5.5 Pa; and turning on a radio frequency power supply, and turning on a filament switch for preheating.
Specifically, Ar: o is2Is 30:10 to 50:10, preferably 40:10, the gas flow rate can be controlled by the opening of the gas valve at the same gas pressure so that the gas flow rate ratio per unit time satisfies the above requirements.
Wherein Ar and O2All are high-purity gases, can be a mixed gas of 99.99% argon and 99.99% oxygen, and the pressure in the cavity is reduced to 10-2After Pa or less, it may preferably be 1X 10-3Pa; the gases are mixed before entering the vacuum chamber or after entering the vacuum chamber respectively. And adjusting the gas flowmeter to reach an experimental preset argon-oxygen ratio, and adjusting the radio frequency matcher to prepare for glow starting.
In a specific optional range of the embodiment, in the step S33, when the filament switch is turned on for preheating, the preheating time is 5-8 min.
In a specific optional range of the embodiment, in the step S4, the pre-sputtering cleaning is performed while the voltage is maintained at 0.5-0.8 kV and the current is maintained at 280-320 mA, and the baffle is removed to start the magnetron sputtering deposition of the AZO film, wherein the pre-sputtering time is 10-15 min, and the magnetron sputtering time is 10-20 min.
Further, the target pitch in the pre-sputtering and magnetron sputtering in step S4 was 70 mm.
In a specific alternative range of the embodiment, the annealing temperature in step S6 is 700 ℃, and the annealing time is 15 min.
According to the above general inventive concept, the following specific embodiments are provided:
[ example 1 ]
The preparation method of the AZO film-based resistive random access memory comprises the following steps:
step S101, wiping impurities on the surface of the AZO ceramic target material by using abrasive paper, and cleaning the target material by using absolute ethyl alcohol;
step S102, using HF dilute solution to generate SiO on the surface of the p-Si substrate2Removing the layer, then ultrasonically cleaning the layer by using absolute ethyl alcohol, and fixing the substrate on a tray after the surface is dried;
s103, assembling a target and a tray according to the experiment steps, and sputtering an AZO film to obtain an AZO film layer with the thickness of 40 nm;
s104, putting the sputtered AZO film into a rapid annealing furnace, and annealing for 15min at 700 ℃;
and step S105, plating metal Au point electrodes on the surfaces of the film and the substrate of the AZO film subjected to the annealing treatment at the temperature of 700 ℃ by using a small vacuum film plating machine to obtain the resistive random access memory based on the AZO film.
[ example 2 ]
Step S201, wiping impurities on the surface of the AZO ceramic target material by using abrasive paper, and cleaning the target material by using absolute ethyl alcohol;
step S202, using HF dilute solution to generate SiO on the surface of the p-Si substrate2Removing the layer, then ultrasonically cleaning the layer by using absolute ethyl alcohol, and fixing the substrate on a tray after the surface is dried;
s203, assembling a target and a tray according to the experiment steps, and sputtering an AZO film to obtain an AZO film layer with the thickness of 50 nm;
step S204, putting the sputtered AZO film into a rapid annealing furnace, and annealing for 15min at 700 ℃;
and S205, plating metal Au point electrodes on the surfaces of the film and the substrate of the AZO film subjected to the annealing treatment at the temperature of 700 ℃ by using a small vacuum coating machine to obtain the AZO film-based resistive random access memory.
Comparative example 1
Step S301, wiping impurities on the surface of the AZO ceramic target material by using abrasive paper, and cleaning the target material by using absolute ethyl alcohol;
step S302, using HF dilute solution to generate SiO on the surface of the p-Si substrate2Removing the layer, then ultrasonically cleaning the layer by using absolute ethyl alcohol, and fixing the substrate on a tray after the surface is dried;
step S303, assembling a target and a tray according to the experiment steps, and sputtering an AZO film to obtain an AZO film layer with the thickness of 40 nm;
step S304, directly plating metal Au point electrodes on the surfaces of the film and the substrate of the sputtered AZO film by using a small vacuum coating machine to prepare the AZO film-based resistive random access memory;
in summary, the resistance change characteristics of the memories provided in example 1 and comparative example 1 were tested using a Keithley2400s semiconductor parameter tester communicating between the top and bottom electrodes.
Fig. 1 is a schematic structural diagram of a resistive random access memory based on an AZO thin film provided by the invention. The memory is a laminated structure consisting of a top electrode, a resistance change layer, a substrate and a bottom electrode, the device is simple to prepare, a layer of AZO thin film is sputtered on a p-Si substrate, and then a layer of metal Au point electrode is respectively plated on the thin film and the surface of the substrate to obtain a basic MIM sandwich structure.
The resistance change characteristics of the memories provided in example 1 and comparative example 1 were tested by setting different voltage cycles using a Keithley2400s semiconductor parameter tester. FIG. 4 is an I-V graph of a test after applying a bias of + -4V to the AZO thin film-based resistive random access memory manufactured without annealing treatment in comparative example 1; fig. 5 is a high-low resistance state distribution diagram of the AZO thin film-based resistive random access memory prepared in comparative example 1 without annealing in +2V reading. It can be obtained that in the resistive random access memory based on the AZO thin film without annealing treatment in comparative example 1, a schottky barrier exists between the Au metal top electrode and the AZO thin film, and the schottky diode characteristic is exhibited.
FIG. 2 is an I-V curve of a test after applying a + -8V bias to the AZO thin film-based resistive random access memory manufactured at the annealing temperature of 700 ℃ in example 1; fig. 3 is a high-low resistance state distribution diagram of the AZO thin film-based resistive random access memory read at +4V, prepared in example 1 at an annealing temperature of 700 ℃. It can be seen that after the 700 ℃ annealing treatmentThe resistance change property of the resistance change memory is obviously improved, and the resistance change mechanism mainly comprises a trap-controlled space charge current limiting effect and a conductive channel effect formed by oxygen vacancy migration in a film. When an applied forward voltage is applied, the device begins to be in a high-resistance state, the current-voltage characteristic follows SCLC law, and when the voltage is increased to VSETForming a conductive channel in the back device, changing from high resistance state to low resistance state, and when applying negative bias, the device reaches reset state VRESETAnd then returns from the low resistance state to the high resistance state.
According to the diagrams of fig. 2 to 5, the above examples and comparative examples are respectively compared, the switching-on voltage of the AZO thin film-based resistive random access memory in comparative example 1, which is not subjected to annealing treatment, is not obvious, the switching ratio is very small, the stability is poor, the resistive characteristics of the annealed resistive random access memory are obviously improved, the AZO thin film-based resistive random access memory in example 1, which is subjected to 700 ℃ annealing treatment, has better distribution stability of high and low resistance states and larger switching ratio under 100-cycle scanning tests, and the switching ratio can reach 2 orders of magnitude under forward bias.
In summary, the resistance random access memory prepared in the embodiment of the invention uses the AZO film as the resistance layer, the on-off specific energy reaches two orders of magnitude, the specific energy of the resistance values in high and low resistance states reaches 20, and the resistance random access memory still keeps good stability under 100-time cycle test and has good resistance change effect.
It should also be understood by those skilled in the art that if the resistive random access memory provided by the present invention is simply changed, combined with the above-mentioned method for adding functions, or replaced on the apparatus thereof, for example, each component is replaced on model materials, the use environment is replaced, the geometric relationship of each component is simply replaced, etc.; or the products formed by the components are integrally arranged; or a detachable design; it is within the scope of the present invention to replace the methods and apparatus of the present invention with any method/apparatus/device that combines the components to form a method/apparatus/device with specific functionality.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; may be mechanically coupled, may be electrically coupled or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (11)
1. The resistive random access memory based on the AZO thin film is characterized by being of a laminated structure and comprising a resistive layer and a substrate which are sequentially arranged, wherein a top electrode is arranged on the resistive layer: the substrate is provided with a bottom electrode;
the substrate is a p-Si substrate, and the resistance change layer is a zinc oxide aluminum-doped (AZO) film.
2. The AZO thin film-based resistive random access memory according to claim 1, wherein the AZO thin film has a thickness of 40-60 nm.
3. The AZO thin film-based resistive random access memory according to claim 1, wherein the top electrode comprises at least one of Au, Al, Ag, W, Ti, TiN or Pt.
4. The AZO thin film-based resistive random access memory according to claim 1, wherein the bottom electrode comprises any one of Au, Al, TiN or Pt.
5. A preparation method of a resistive random access memory based on an AZO film is characterized by comprising the following specific steps:
step S1: pretreating the surface of the AZO ceramic target;
step S2: using HF dilute solution to generate SiO on the surface of p-Si substrate2Removing the layer, then ultrasonically cleaning the layer by using absolute ethyl alcohol, and fixing the substrate on a tray after the surface is dried;
step S3: adopting a sputtering coating reaction chamber with a cavity inside, and forcibly pumping the pressure in the cavity to 10 DEG by using a molecular pump-2Introducing Ar and O into the cavity after Pa is lower2Adjusting the vacuum degree in the cavity to be 4.5-5.5 Pa, and preheating;
step S4: preparing to start brightness, adjusting power, keeping the voltage at 0.5-0.8 kV and the current at 280-320 mA, carrying out pre-sputtering cleaning, removing impurities on the surface of the target material, and then removing a baffle to begin magnetron sputtering deposition of an AZO film;
step S5: after sputtering is finished, the power supply of the equipment is closed according to a program, and the p-Si substrate deposited with the AZO film is taken out;
step S6: placing the sputtered AZO film into a rapid annealing furnace, and annealing in an air atmosphere;
step S7: and at normal temperature, placing the prepared AZO film under a metal mask plate with a phi 0.05mm round hole array, and respectively plating a layer of metal Au point electrode on the film and the substrate surface by a magnetron sputtering method to obtain the AZO film-based resistive random access memory.
6. The method for preparing the AZO thin film-based resistive random access memory according to claim 5, wherein the pretreatment of the surface of the AZO ceramic target comprises wiping impurities on the surface of the AZO ceramic target with a piece of abrasive paper, and then cleaning the target with absolute ethyl alcohol;
wherein the content of aluminum in the AZO target material is 10%.
7. The method for preparing an AZO thin film-based resistive random access memory according to claim 5, wherein in step S3, the Ar: o is2The gas flow ratio of (a) to (b) is 40: 10; ar and O2The gas is high-purity gas, and the gas is mixed before entering the vacuum cavity or respectively enters the vacuum cavity and then is mixed.
8. The preparation method of the AZO thin film-based resistive random access memory according to claim 5, wherein the preheating time in the step S3 is 5-8 min.
9. The preparation method of the AZO thin film-based resistive random access memory according to claim 5, wherein the pre-sputtering time in the step S4 is 10-15 min, and the magnetron sputtering time is 10-20 min.
10. The method for preparing an AZO thin film-based resistive random access memory according to claim 5, wherein the target base distance in the pre-sputtering and magnetron sputtering in step S4 is 70 mm.
11. The method for preparing the AZO thin film-based resistive random access memory according to claim 5, wherein the annealing temperature in step S6 is 700 ℃ and the annealing time is 15 min.
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