CN110098288A - A kind of sull device and preparation method thereof with photodiode effect - Google Patents
A kind of sull device and preparation method thereof with photodiode effect Download PDFInfo
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- CN110098288A CN110098288A CN201910267910.9A CN201910267910A CN110098288A CN 110098288 A CN110098288 A CN 110098288A CN 201910267910 A CN201910267910 A CN 201910267910A CN 110098288 A CN110098288 A CN 110098288A
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- 230000000694 effects Effects 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 37
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000000137 annealing Methods 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 244000137852 Petrea volubilis Species 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 22
- 239000010409 thin film Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention belongs to microelectronics technologies, disclose a kind of sull device and preparation method thereof with photodiode effect, the sull device includes top electrode, oxide film layer, substrate layer and hearth electrode；The substrate layer is p-Si substrate, and the oxide film layer is ZrO2.Sull is deposited on substrate by the present invention by magnetron sputtering method, is then plated metallic top electrode in the upper surface of film respectively and is plated metallic bottom electrode in substrate back, forms metal/oxide film/semiconductor device structure.By annealing in suitable temperature and oxygen atmosphere, it is fabricated to this kind of device architecture, there is apparent diode effect.
Description
Technical field
The invention belongs to microelectronics technologies, more particularly, to a kind of oxide with photodiode effect
Thin-film device and preparation method thereof.
Background technique
In recent years, as science and technology constantly develops, the concern that thin-film device is subject to is continuously increased, in every field all very
Big development, photodiode are exactly the direction of one of them great development prospect.Photodiode is that one kind can turn light
Turn to the optical detector of voltage or electric current.
Photodiode and conventional semiconductor diode are substantially similar, and only photodiode can be directly exposed to light
Source nearby or by transparent small window, optical fiber encapsulates, and the photo sensitive area to allow light to reach device detects optical signal.
The basic structure of one photodiode is very simple, is usually made of a PN junction.There is enough energy when one
Photon impact in the photo sensitive area of device, it will i.e. send out an electronics be accompanied by simultaneously to generate free electron
One has the hole of positive electricity, and such mechanism is referred to as inner photoeffect.If exhausting in PN junction occurs for the absorption of photon
Layer, then the interior power plant in the region will eliminate obstacle therebetween so that hole is towards anode movement, electronics towards cathode motion,
Photoelectric current just produces in this way.
PN junction photodiode is as other kinds of optical detector not in such as photo resistance, photosensitive coupling element
And it has a wide range of applications in the equipment such as light multiplication current pipe.They can export corresponding electricity according to the intensity of institute's light
Flow voltage signal.In scientific research and industrial production, photodiode is frequently used to precise measurement light intensity, to meet
The requirement of special occasions.
Summary of the invention
In order to solve above-mentioned the deficiencies in the prior art and disadvantage, primary and foremost purpose of the present invention is that providing one kind has
The sull device of photodiode effect.
Another object of the present invention is to provide a kind of above-mentioned sull devices with photodiode effect
Preparation method.
The purpose of the present invention is realized by following technical proposals:
A kind of sull device with photodiode effect, the sull device include top electrode,
Oxide film layer, substrate layer and hearth electrode；The substrate layer is p-Si substrate, and the oxide film layer is ZrO2。
Preferably, the oxide film layer with a thickness of 40~50nm.
Preferably, the top electrode is one or more of Au, Ti, Al, Ag, W, TiN or Pt.
Preferably, the hearth electrode is W, Cu, Al, TiN or Pt.
The preparation method of the sull device with photodiode effect, comprises the following specific steps that:
S1. Zr target and W target material surface are wiped with sand paper, removes the impurity on surface, then use washes of absolute alcohol target, clearly
Wash clean；
S2. p-Si substrate is immersed in HF solution, the SiO that removal substrate surface generates2；
S3. target and substrate are installed, recirculated water is opened, opens total power switch, opens mechanical pump, regulates and controls air valve, makes pressure
It is reduced to 10Pa or less；After pressure is stablized, molecular pump is opened, regulates and controls plate valve, reduces pressure 5 × 10-3Pa or less；It closes
Plate valve is passed through O2And Ar, control valve, while fine adjustment plate valve, vacuum are maintained at 4.5Pa~5.9Pa, open radio-frequency power supply,
Filament pre-heating；
S4. preparing build-up of luminance, regulation power controls electric current in 280~320mA, and voltage is sputtered in 0.6~0.8kV,
Sull is made；
S5. 600~650 DEG C of annealing under Oxygen Condition by sull, will it is annealed after deposition oxide film
Substrate is relay in observing and controlling sputter, repeats step S1-S4, under the atmosphere for only leading to Ar, in the base of deposition oxide film
The back side of piece plates one layer of metal W, plates one layer of metal Au point electrode in front, obtains the oxidation with photodiode effect
Object thin-film device.
Preferably, substrate layer described in step S3 is p-Si substrate
Preferably, Ar:O described in step S32Flow-rate ratio be 8:(2~3).
Preferably, the time of preheating described in step S3 is 3~5min.
Preferably, the time of sputtering described in step S4 is 30~40min.
Preferably, the time of annealing described in step S5 is 10~15min.
Compared with prior art, the invention has the following advantages:
1. sull is deposited on substrate by the present invention by magnetron sputtering method, then plated respectively in the upper surface of film
Upper metallic top electrode and metallic bottom electrode is plated in substrate back, form metal/oxide film/semiconductor device structure.It is logical
It crosses in suitable temperature and oxygen atmosphere and anneals, be fabricated to this kind of device architecture, there is apparent diode effect.
2. the sull device with diode effect of the invention has response sensitive, linear change is good, photoelectricity
The advantages of high conversion efficiency, strong antijamming capability is small in size, long working life.
3. preparation process of the invention is simple, diode effect is well stablized, and just has in light intensity detector field wide
Application prospect.
Detailed description of the invention
Fig. 1 is that the present invention plates ZrO on p-Si substrate2Structure of thin film device figure and its test schematic diagram；
Fig. 2 is the ZrO in embodiment 12Thin-film device is under dark condition, the I-V curve figure of application ± 1V voltage tester；
Fig. 3 is the ZrO in embodiment 12Thin-film device constantly increases the I- of light intensity test in the case where only adding ultraviolet light
V curve graph；
Fig. 4 is the ZrO in embodiment 12Thin-film device is 20.30mW/cm in ultraviolet light intensity2Under the conditions of, application ± 1V voltage
The I-T curve graph of test.
Specific embodiment
The contents of the present invention are further illustrated combined with specific embodiments below, but should not be construed as limiting the invention.
Unless otherwise specified, the conventional means that technological means used in embodiment is well known to those skilled in the art.Except non-specifically
Illustrate, reagent that the present invention uses, method and apparatus is the art conventional reagents, method and apparatus.
Embodiment 1
1. preparing ZrO using magnetron sputtering plating method2Thin-film device: getting out Zr and W target and p-Si, by metallic target
Material sand paper wipes surface, then clean with washes of absolute alcohol.Si piece surface is wiped with HF weak solution, drives away surface
SiO2。
2. the substrate cleared up and target are fixed according to experimental procedure installation, then splashed according to above-mentioned experimental procedure
Penetrate ZrO2Film, ZrO2Film layer with a thickness of 40nm.
3. the ZrO that will have been sputtered2Film is placed in quick anneal oven 600 DEG C, and anneal 10min.Then annealing is completed
Sample plates metal Au point electrode with small size vacuum coating machine on film, plates metal W hearth electrode at the back side of substrate, system
There must be the ZrO of photodiode effect2Thin-film device.
Fig. 1 is device architecture of the present invention and its test schematic diagram.The sull device include substrate layer p-Si substrate,
Oxide film layer ZrO2And electrode layer, wherein electrode layer includes top electrode and hearth electrode.Device preparation is simple, only need to be
One layer of ZrO is sputtered on the substrate cleaned up2Then film plates metal point electrode, the back side of substrate in the upper surface of film
Metallic bottom electrode is plated, material is thus formed basic MOS structure devices.Fig. 2 is the present embodiment under dark condition, to device
Application ± 1V voltage, measurement obtain I-V curve.As can see from Figure 2 when applying negative voltage, device is in off state；
When applying forward voltage, the electric current of break-over of device is also to belong to the other electric current of na level.Fig. 3 is that the present embodiment is adding ultraviolet light
According under conditions of, when application ± 1V voltage, it is continuously increased intensity of illumination, the I-V curve figure measured.It can be seen in figure 3 that with
The continuous increase of ultraviolet light intensity, negative sense conducting situation be continuously increased, positive change is unobvious, is kept essentially constant.Fig. 4 is
The present embodiment is 20.30mW/cm in ultraviolet ray intensity2Under the conditions of, when application -1V voltage, the I-T curve graph that measures.Have unglazed
According to time interval be 100s, from the curent change in Fig. 4 the case where from the point of view of, device is to the sensitivity of illumination or more stable
's.
Embodiment 2
1. preparing ZrO using magnetron sputtering plating method2Thin-film device: getting out Zr and W target and p-Si, by metallic target
Material sand paper wipes surface, then clean with washes of absolute alcohol.Si piece surface is wiped with HF weak solution, drives away surface
SiO2。
2. the substrate cleared up and target are fixed according to experimental procedure installation, then splashed according to above-mentioned experimental procedure
Penetrate ZrO2Film, ZrO2Film layer with a thickness of 50nm.
3. the ZrO that will have been sputtered2Film is placed in quick anneal oven 650 DEG C, and anneal 10min.Then annealing is completed
Sample plates metal Au point electrode with small size vacuum coating machine on film, plates metal W hearth electrode at the back side of substrate, system
There must be the ZrO of photodiode effect2Thin-film device.
Embodiment 3
1. preparing ZrO using magnetron sputtering plating method2Thin-film device: getting out Zr and W target and p-Si, by metallic target
Material sand paper wipes surface, then clean with washes of absolute alcohol.Si piece surface is wiped with HF weak solution, drives away surface
SiO2。
2. the substrate cleared up and target are fixed according to experimental procedure installation, then splashed according to above-mentioned experimental procedure
Penetrate ZrO2Film, ZrO2Film layer with a thickness of 45nm.
3. the ZrO that will have been sputtered2Film is placed in quick anneal oven 600 DEG C, and anneal 15min.Then annealing is completed
Sample plates metal Au point electrode with small size vacuum coating machine on film, plates metal W hearth electrode at the back side of substrate, system
There must be the ZrO of photodiode effect2Thin-film device.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, it is other it is any without departing from the spirit and principles of the present invention made by change, modification, substitution, combination and simplify,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of sull device with photodiode effect, which is characterized in that the sull device packet
Include top electrode, oxide film layer, substrate layer and hearth electrode；The substrate layer is p-Si substrate, and the oxide film layer is
ZrO2。
2. the sull device according to claim 1 with photodiode effect, which is characterized in that the oxygen
Compound film layer with a thickness of 40~50nm.
3. the sull device according to claim 1 with photodiode effect, which is characterized in that the top
Electrode is one or more of Au, Ti, Al, Ag, W, TiN or Pt.
4. the sull device according to claim 1 with photodiode effect, which is characterized in that the bottom
Electrode is W, Cu, Al, TiN or Pt.
5. the preparation side of the sull device according to claim 1-4 with photodiode effect
Method, which is characterized in that comprise the following specific steps that:
S1. Zr target and W target material surface are wiped with sand paper, removes the impurity on surface, then use washes of absolute alcohol target, cleaning is dry
Only；
S2. p-Si substrate is immersed in HF solution, the SiO that removal substrate surface generates2；
S3. target and substrate are installed, recirculated water is opened, opens total power switch, opens mechanical pump, regulates and controls air valve, reduces pressure
To 10Pa or less；After pressure is stablized, molecular pump is opened, regulates and controls plate valve, reduces pressure 5 × 10-3Pa or less；Close plate
Valve is passed through O2And Ar, control valve, while fine adjustment plate valve, vacuum are maintained at 4.5~5.9Pa, open radio-frequency power supply, filament
Preheating；
S4. prepare build-up of luminance, regulation power controls electric current in 280~320mA, and voltage is sputtered in 0.6~0.8kV, is made
Sull；
S5. 600~650 DEG C of annealing under Oxygen Condition by sull, will it is annealed after deposition oxide film substrate
It relays in observing and controlling sputter, repeats step S1-S4, under the atmosphere for only leading to Ar, in the substrate of deposition oxide film
The back side plates one layer of metal W, plates one layer of metal Au point electrode in front, it is thin to obtain the oxide with photodiode effect
Membrane module.
6. the preparation method of the sull device according to claim 5 with photodiode effect, feature
It is, substrate layer described in step S3 is p-Si substrate.
7. the preparation method of the sull device according to claim 5 with photodiode effect, feature
It is, Ar:O described in step S32Flow-rate ratio be 8:(2~3).
8. the preparation method of the sull device according to claim 5 with photodiode effect, feature
It is, the time of preheating described in step S3 is 3~5min.
9. the preparation method of the sull device according to claim 5 with photodiode effect, feature
It is, the time of sputtering described in step S4 is 30~40min.
10. the preparation method of the sull device according to claim 5 with photodiode effect, feature
It is, the time of annealing described in step S5 is 10~15min.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910267910.9A CN110098288B (en) | 2019-04-03 | 2019-04-03 | Oxide thin film device with photodiode effect and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910267910.9A CN110098288B (en) | 2019-04-03 | 2019-04-03 | Oxide thin film device with photodiode effect and preparation method thereof |
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| CN110098288A true CN110098288A (en) | 2019-08-06 |
| CN110098288B CN110098288B (en) | 2021-03-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113793900A (en) * | 2021-09-14 | 2021-12-14 | 广东工业大学 | AZO film-based resistive random access memory and preparation method thereof |
| CN113802102A (en) * | 2021-09-14 | 2021-12-17 | 广东工业大学 | AZO thin film device with photodiode effect and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4403239A (en) * | 1979-12-26 | 1983-09-06 | Shunpei Yamazaki | MIS Type semiconductor photoelectric conversion device |
| CN101667611A (en) * | 2009-09-15 | 2010-03-10 | 上海交通大学 | Preparation method of solar micro battery on basis of directional carbon nano tube |
| US7833904B2 (en) * | 2005-06-16 | 2010-11-16 | The Trustees Of Columbia University In The City Of New York | Methods for fabricating nanoscale electrodes and uses thereof |
-
2019
- 2019-04-03 CN CN201910267910.9A patent/CN110098288B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4403239A (en) * | 1979-12-26 | 1983-09-06 | Shunpei Yamazaki | MIS Type semiconductor photoelectric conversion device |
| US7833904B2 (en) * | 2005-06-16 | 2010-11-16 | The Trustees Of Columbia University In The City Of New York | Methods for fabricating nanoscale electrodes and uses thereof |
| CN101667611A (en) * | 2009-09-15 | 2010-03-10 | 上海交通大学 | Preparation method of solar micro battery on basis of directional carbon nano tube |
Non-Patent Citations (2)
| Title |
|---|
| K. SASIKUMAR ET AL.: "Effect of Annealing Temperature on Structural and Electrical Properties of Al/ZrO2/p-Si MIS Schottky Diodes", 《SILICON》 * |
| VLADIMIR GRITSENKO ET AL.: "Atomic and electronic structures of amorphous ZrO2 and HfO2 films", 《MICROELECTRONIC ENGINEERING》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113793900A (en) * | 2021-09-14 | 2021-12-14 | 广东工业大学 | AZO film-based resistive random access memory and preparation method thereof |
| CN113802102A (en) * | 2021-09-14 | 2021-12-17 | 广东工业大学 | AZO thin film device with photodiode effect and preparation method thereof |
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