CN106206681B - Thin film transistor (TFT) and preparation method and interactive display unit - Google Patents
Thin film transistor (TFT) and preparation method and interactive display unit Download PDFInfo
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- CN106206681B CN106206681B CN201610670245.4A CN201610670245A CN106206681B CN 106206681 B CN106206681 B CN 106206681B CN 201610670245 A CN201610670245 A CN 201610670245A CN 106206681 B CN106206681 B CN 106206681B
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- 239000010409 thin film Substances 0.000 title claims abstract description 176
- 238000002360 preparation method Methods 0.000 title claims abstract description 66
- 230000002452 interceptive effect Effects 0.000 title claims abstract description 17
- 239000010408 film Substances 0.000 claims abstract description 172
- -1 zinc-tin nitrogen oxygen Chemical group 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims description 68
- 238000000151 deposition Methods 0.000 claims description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 4
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 claims description 4
- 239000011701 zinc Substances 0.000 abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052733 gallium Inorganic materials 0.000 abstract description 10
- 229910052738 indium Inorganic materials 0.000 abstract description 10
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 230000005669 field effect Effects 0.000 description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 19
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 17
- 238000012546 transfer Methods 0.000 description 17
- 229910052718 tin Inorganic materials 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 239000008186 active pharmaceutical agent Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 11
- 229910052681 coesite Inorganic materials 0.000 description 11
- 229910052906 cristobalite Inorganic materials 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 11
- 229910052682 stishovite Inorganic materials 0.000 description 11
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- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 230000000149 penetrating effect Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
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- 239000004065 semiconductor Substances 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 238000005566 electron beam evaporation Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 229910001128 Sn alloy Inorganic materials 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- OLBVUFHMDRJKTK-UHFFFAOYSA-N [N].[O] Chemical group [N].[O] OLBVUFHMDRJKTK-UHFFFAOYSA-N 0.000 description 4
- UQSVPLADXMYZLF-UHFFFAOYSA-N [N].[Sn]=O Chemical compound [N].[Sn]=O UQSVPLADXMYZLF-UHFFFAOYSA-N 0.000 description 4
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- YSCNMFDFYJUPEF-OWOJBTEDSA-N 4,4'-diisothiocyano-trans-stilbene-2,2'-disulfonic acid Chemical compound OS(=O)(=O)C1=CC(N=C=S)=CC=C1\C=C\C1=CC=C(N=C=S)C=C1S(O)(=O)=O YSCNMFDFYJUPEF-OWOJBTEDSA-N 0.000 description 2
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- 230000003000 nontoxic effect Effects 0.000 description 2
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- 241000208340 Araliaceae Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical group O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
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- ZTMZSVPSRVZZFG-UHFFFAOYSA-N [Zn].N#[Sn] Chemical compound [Zn].N#[Sn] ZTMZSVPSRVZZFG-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a kind of thin film transistor (TFT) and preparation method and interactive display units, wherein thin film transistor (TFT) includes substrate, gate electrode layer, gate dielectric layer, channel layer, source electrode layer and drain electrode layer；Wherein, channel layer is zinc-tin nitrogen oxygen film；The chemical formula of zinc-tin nitrogen oxygen film are as follows: ZnaSnbNyOz.It is Zn by using chemical formulaaSnbNyOzZinc-tin nitrogen oxygen film as channel layer, for traditional indium gallium zinc oxygen thin film transistor (TFT), element in zinc-tin nitrogen oxygen film does not include rare element, this production cost for allowing for thin film transistor (TFT) can substantially reduce.And, due to zinc-tin nitrogen oxygen film mobility with higher and relatively narrow band gap, opening speed is fast and can be to including photon photoresponse electric current with higher in visible wavelength range, therefore the core element that it can simultaneously as the display unit of interactive display unit and light sensing unit.
Description
Technical field
The present invention relates to technical field of semiconductor device, more particularly to a kind of thin film transistor (TFT) and preparation method and interaction
Formula display device.
Background technique
Currently, third generation metal oxide thin-film transistor (Thin Film Transistor, TFT), such as: indium gallium zinc oxygen
(IGZO) thin film transistor (TFT) is due to electron mobility with higher, the good transparency, can low temperature preparation the advantages that, can be extensive
Applied to Active Matrix LCD At screen.But if traditional indium gallium zinc oxygen thin film transistor (TFT) is applied to be interactive display, Zhi Nengzuo
For its display unit core element, it can not be used as its photo cell core element, this is because indium gallium zinc oxygen material band gap is larger,
Photoresponse electric current can only be generated to the ultraviolet light outside visible-range, and light responsing sensitivity is lower.And due to indium gallium zinc oxygen
It phosphide element in thin film transistor (TFT) and sows element and belongs to rare element, it is expensive and toxic, cause traditional indium gallium zinc oxygen thin
The higher cost of film transistor.
Summary of the invention
Based on this, it is necessary to existing cost when for traditional indium gallium zinc oxygen thin film transistor (TFT) applied to interactive display
Compatibility issue that is higher, applying in interactive display screen, provides a kind of thin film transistor (TFT) and preparation method and interactive mode is aobvious
Showing device.
A kind of thin film transistor (TFT) that purpose provides to realize the present invention, including substrate, gate electrode layer, gate dielectric layer, channel
Layer, source electrode layer and drain electrode layer；
Wherein, the gate electrode layer is formed in the substrate surface；The gate dielectric layer is formed in the gate electrode layer table
Face；The channel layer is formed in the gate dielectric layer surface；The source electrode layer and the drain electrode layer are both formed in the ditch
Road layer surface, and there is interval between the source electrode layer and the drain electrode layer；
Or
The channel layer is formed in the substrate surface；The gate dielectric layer is formed in the channel layer surface；The source
Electrode layer and the drain electrode layer are respectively formed in the surface that the channel layer is not covered by the gate dielectric layer, and source electricity
Pole layer and the drain electrode layer are located at the two sides of the gate dielectric layer；The gate electrode layer is formed in the gate dielectric layer table
Face；
Wherein, the channel layer is zinc-tin nitrogen oxygen film；
The chemical formula of the zinc-tin nitrogen oxygen film are as follows: ZnaSnbNyOz；
A is the atom content of Zn-ef ficiency in the zinc-tin nitrogen oxygen film, and b is the original of tin element in the zinc-tin nitrogen oxygen film
Sub- content, y are the atom content of nitrogen in the zinc-tin nitrogen oxygen film, and z is the original of oxygen element in the zinc-tin nitrogen oxygen film
Sub- content.
In one of the embodiments, in the zinc-tin nitrogen oxygen film, nitrogen oxygen atom percentage are as follows: 0.50-2.00.
Nitrogen oxygen atom percentage is 1.73 in the zinc-tin nitrogen oxygen film in one of the embodiments,.
In one of the embodiments, in the zinc-tin nitrogen oxygen film, the atomic ratio of the Zn-ef ficiency and tin element are as follows:
2—10。
In one of the embodiments, the zinc-tin nitrogen oxygen thin film transistor (TFT) with a thickness of 10nm -100nm.
Correspondingly, the present invention also provides a kind of film crystal tube preparation method, it is used to prepare as above any described thin
Film transistor includes the following steps:
It is sequentially prepared to form gate electrode layer and gate dielectric layer in substrate surface using coating process；In the gate dielectric layer table
Wheat flour is standby to form channel layer；It prepares to form source electrode layer and drain electrode layer in the channel layer surface, completes the institute of bottom grating structure
After the preparation for stating thin film transistor (TFT), after annealing processing is carried out；There is interval between the source electrode layer and the drain electrode layer；
Or
It prepares to form the channel layer in the substrate surface using coating process；It prepares to be formed in the channel layer surface
The gate dielectric layer；It is not prepared to form the source electrode layer and described by the surface that the gate dielectric layer covers in the channel layer
Drain electrode layer；Wherein, the source electrode layer and the drain electrode layer are located at the two sides of the gate dielectric layer；It is situated between in the grid
Matter layer surface prepares to form the gate electrode layer；After the preparation for completing the thin film transistor (TFT) of top gate structure, after annealing is carried out
Processing；
Wherein, the channel layer is zinc-tin nitrogen oxygen film；
The chemical formula of the zinc-tin nitrogen oxygen film are as follows: ZnaSnbNyOz；
A is the atom content of Zn-ef ficiency in the zinc-tin nitrogen oxygen film, and b is the original of tin element in the zinc-tin nitrogen oxygen film
Sub- content, y are the atom content of nitrogen in the zinc-tin nitrogen oxygen film, and z is the original of oxygen element in the zinc-tin nitrogen oxygen film
Sub- content.
In one of the embodiments, in the preparation or completion top gate structure for completing the thin film transistor (TFT) of the bottom grating structure
Thin film transistor (TFT) preparation after, carry out the after annealing processing when, annealing temperature are as follows: 200 DEG C -400 DEG C, annealing time
It is 3 hours -10 hours；Annealing atmosphere is oxygen-containing gas.
Before forming the source electrode layer and the drain electrode layer or form the source electricity in one of the embodiments,
After pole layer and the drain electrode layer, further include the steps that ozone-plasma bombards process；
Wherein, the bombardment power of the ozone-plasma bombardment technique are as follows: 200W -500W, bombardment time are 5min -
15min。
The channel layer prepares to be formed using magnetron sputtering depositing operation in one of the embodiments,；And
When forming the channel layer using the magnetron sputtering depositing operation, depositing operation gas is nitrogen, deposition chambers
Pressure be 1.5Pa -2.5Pa, sputtering power be 100W -150W.
Correspondingly, the present invention also provides a kind of display device, including as above any thin film transistor (TFT).
Above-mentioned thin film transistor (TFT) is Zn by using chemical formulaaSnbNyOzZinc-tin nitrogen oxygen film as channel layer, compare
For traditional indium gallium zinc oxygen thin film transistor (TFT), since the zinc-tin nitrogen oxygen film as channel layer is by enriching nontoxic element group
At component is common element, this production cost for allowing for thin film transistor (TFT) can substantially reduce, while prepare film
High temperature process conditions are not needed when transistor, can be realized under the conditions of low temperature process.Therefore, film crystal is effectively reduced
Requirement of the pipe to preparation condition, while will not also pollution be generated to environment.Also, it is moved since zinc-tin nitrogen oxygen film is with higher
Shifting rate and relatively narrow band gap, therefore it is applied to have response speed special faster when the display unit of interactive display unit
Point, when being applied to photo cell, photoresponse electric current can be generated in visible wavelength range and light responsing sensitivity is higher by having
The characteristics of.Therefore zinc-tin nitrogen oxygen thin film transistor (TFT) can be used as the core element and light of the display unit in interactive display simultaneously
Feel the core element of unit.It finally efficiently solves traditional indium gallium zinc oxygen thin film transistor (TFT) and makees existing higher cost, handing over
The compatibility issue applied in mutual formula display screen.
Detailed description of the invention
Fig. 1 is the schematic diagram of the section structure of a specific embodiment of thin film transistor (TFT) of the invention；
Fig. 2 is the schematic diagram of the section structure of the another specific embodiment of thin film transistor (TFT) of the invention；
Fig. 3 is the film crystal prepared using the embodiment one of film crystal tube preparation method of the invention to example IV
The output characteristic curve figure of pipe；
Fig. 4 is the film crystal prepared using the embodiment one of film crystal tube preparation method of the invention to example IV
The transfer characteristic curve figure of pipe；
Fig. 5 is the thin film transistor (TFT) stability prepared using the embodiment two of film crystal tube preparation method of the invention
Transfer characteristic curve figure；
Fig. 6 is the photoconduction of the thin film transistor (TFT) prepared using the embodiment two of film crystal tube preparation method of the invention
It is worth curve graph；
Fig. 7 is the η μ τ value of the thin film transistor (TFT) prepared using the embodiment two of film crystal tube preparation method of the invention
Curve graph；
Fig. 8 is the film that the embodiment one of film crystal tube preparation method of the invention is respectively adopted and prepares to embodiment three
The band gap curve graph of transistor；
Fig. 9 is the film crystal prepared using the embodiment five and embodiment six of film crystal tube preparation method of the invention
The transfer characteristic curve figure of pipe；
Figure 10 is the film crystalline substance prepared using the embodiment five and embodiment seven of film crystal tube preparation method of the invention
The transfer characteristic curve figure of body pipe；
Figure 11 is the film prepared using the embodiment eight of film crystal tube preparation method of the invention to embodiment 12
The transfer characteristic curve figure of transistor；
Figure 12 be using film crystal tube preparation method of the invention embodiment 13 to embodiment 14 prepare it is thin
The transfer characteristic curve figure of film transistor.
Specific embodiment
To keep technical solution of the present invention clearer, the present invention is made below in conjunction with drawings and the specific embodiments further detailed
It describes in detail bright.
Firstly, it is necessary to explanation, thin film transistor (TFT) 100 of the invention may be either the thin film transistor (TFT) 100 of bottom grating structure,
It can also be the thin film transistor (TFT) 100 of top gate structure.
It wherein, is the thin film transistor (TFT) 100 of bottom grating structure of the invention referring to Fig. 1.It includes substrate 110, gate electrode layer
120, gate dielectric layer 130, channel layer 140, source electrode layer 150 and drain electrode layer 160.Specifically, gate electrode layer 120 is formed in lining
110 surface of bottom.Gate dielectric layer 130 is formed in 120 surface of gate electrode layer.Channel layer 140 is formed in 130 surface of gate dielectric layer.Source
Electrode layer 150 and drain electrode layer 160 are both formed in 140 surface of channel layer, and have between source electrode layer 150 and drain electrode layer 160
There is interval.Wherein, it is Zn that channel layer 140, which is chemical formula,aSnbNyOzZinc-tin nitrogen oxygen film.Herein, it should be noted that a is
The atom content of Zn-ef ficiency (Zn) in zinc-tin nitrogen oxygen film, b are the atom content of tin element (Sn) in zinc-tin nitrogen oxygen film, and y is
The atom content of nitrogen (N) in zinc-tin nitrogen oxygen film, z are the atom content of oxygen element (O) in zinc-tin nitrogen oxygen film.
It referring to fig. 2, is the thin film transistor (TFT) 100 of top gate structure of the invention.It equally includes substrate 110, gate electrode layer
120, gate dielectric layer 130, channel layer 140, source electrode layer 150 and drain electrode layer 160.Unlike, channel layer 140 is formed in lining
110 surface of bottom；Gate dielectric layer 130 is formed in 140 surface of channel layer；Source electrode layer 150 and drain electrode layer 160 are respectively formed in ditch
The surface that channel layer 140 is not covered by gate dielectric layer 130, also, source electrode layer 150 and drain electrode layer 160 are located at gate medium
The two sides of layer 130；Gate electrode layer 120 is then formed in 130 surface of gate dielectric layer, be located at source electrode layer 150 and drain electrode layer 160 it
Between.Likewise, equally using chemical formula for Zn in the thin film transistor (TFT) 100 of top gate structureaSnbNyOzZinc-tin nitrogen oxygen film
As channel layer 140.
That is, no matter the structure of thin film transistor (TFT) 100 of the invention is bottom grating structure or top gate structure, channel
Layer 140 is that chemical formula is ZnaSnbNyOzZinc-tin nitrogen oxygen film.It is by using zinc-tin nitrogen oxygen film as crystal as a result,
Channel layer 140 in pipe, so that the performance for the thin film transistor (TFT) 100 being ultimately formed is better than traditional amorphous silicon membrane crystal
Pipe.Also, it since zinc-tin nitrogen oxygen film is made of nontoxic element abundant, not can cause environmental pollution not only, have good
Good environmental protection characteristic, while process conditions are required more wide in range, even if still being able to prepare under the conditions of low temperature process, this is also
Effectively reduce the requirement of preparation condition.It further, is that direct band gap is partly led as the zinc-tin nitrogen oxygen film of channel layer 140
Body.Wherein, direct band-gap semicondictor material is exactly conduction band minimum (conduction band bottom) and the maximum price band same position in k-space
It sets.Electronics, which will transit to, to be generated conductive electrons and holes (forming half-full energy band) and only needs to absorb energy greater than band gap on conduction band
Photon.And the band gap of zinc-tin nitrogen oxygen film is relatively narrow, can respond to visible light, this is allowed for using zinc-tin nitrogen oxygen film
It can be applied to the display unit and light sensing unit of interactive display screen simultaneously as the thin film transistor (TFT) 100 of channel layer 140, from
And efficiently solve the compatibility issue that thin film transistor (TFT) 100 is applied in interactive display screen.
Wherein, it should be noted that in thin film transistor (TFT) 100 of the invention, the zinc-tin nitrogen oxygen as channel layer 140 is thin
The content of oxygen element has a certain impact to the performance tool of thin film transistor (TFT) 100 in film, therefore, in thin film transistor (TFT) of the invention
In 100, nitrogen oxygen atom percentage are as follows: 0.50-2.00, optimal value 1.73.When nitrogen oxygen atom ratio is certain value, zinc-tin nitrogen oxygen
The performance of thin film transistor (TFT) is more excellent, this is because the presence of a certain amount of oxygen element can effectively reduce the current-carrying of zinc-tin nitrogen oxygen film
Sub- concentration, while the mobility of zinc-tin nitrogen oxygen film can be made to improve compared with high nitrogen amount of element, thus in the pass for reducing thin film transistor (TFT)
State electric current makes the on-state current of thin film transistor (TFT) maintain high value again simultaneously, final to obtain the higher Simultaneous Switching ratio of mobility again
Biggish thin film transistor (TFT).
In addition, the atomic percent of Zn-ef ficiency (Zn) and tin element (Sn) in zinc-tin nitrogen oxygen film compares thin film transistor (TFT)
100 performance parameter equally has important influence.Therefore, the selection of the atomic percent of Zn-ef ficiency and tin element is also especially heavy
It wants.In a specific embodiment of thin film transistor (TFT) 100 of the invention, the value of the atomic percent of Zn-ef ficiency and tin element
Range can are as follows: 2-10.Preferably, through a large number of experiments the study found that in the zinc-tin nitrogen oxygen film Zn-ef ficiency and tin element
When atomic percent is 6.66, i.e. when the content of tin element is lower, intrinsic mobility is up to 25.58cm2V-1s-1, N-type current-carrying
Sub- concentration is 1019cm-3, there is relatively narrow optics direct band gap (about 1.70ev).And in the zinc-tin nitrogen oxygen film Zn-ef ficiency with
When the atomic percent of tin element is 3.75, i.e. when the content of tin element is higher, intrinsic mobility can reduce, corresponding field effect
Answer mobility that can be reduced, the degradation of thin film transistor (TFT) 100.Therefore, as the excellent of thin film transistor (TFT) 100 of the invention
Select embodiment, the value of the atomic percent of Zn-ef ficiency and tin element should between 3.75-6.66, preferably 6.66.
Further, since the thickness of the channel layer 140 in thin film transistor (TFT) 100 equally also will affect thin film transistor (TFT)
100 performance parameter.Source electrode layer 150 and drain electrode when the thickness of channel layer 140 is blocked up, positioned at 140 surface of channel layer
Contact resistance between layer 160 will be excessive, and using zinc-tin nitrogen oxygen film as the intrinsic carrier in channel layer 140
Can be excessive, thin film transistor (TFT) 100 thus can be made to occur closing continuous phenomenon.When the thickness of channel layer 140 is excessively thin, as ditch
The quality of forming film of the zinc-tin nitrogen oxygen film of channel layer 140 is not easy to improve, it will usually be in high-impedance state, so that thin film transistor (TFT) can not be embodied
100 performance.Therefore, in thin film transistor (TFT) 100 of the invention, the thickness of the zinc-tin nitrogen oxygen film as channel layer 140
Range is 10nm -100nm.Preferably, after through lot of experiments, guaranteeing that it is good that thin film transistor (TFT) 100 has
While performance parameter, additionally it is possible to manufacturing cost be effectively reduced, save and generate the process time, the thickness of zinc-tin nitrogen oxygen film is excellent
It is selected as 15nm -33nm.
In addition, the structure of the zinc-tin nitrogen oxygen film as channel layer 140 equally also will affect the performance of thin film transistor (TFT) 100
Parameter.And the structure of zinc-tin nitrogen oxygen film is usually to be determined by the preparation process of zinc-tin nitrogen oxygen film.As of the invention
Magnetron sputtering deposition work can be used in one specific embodiment of thin film transistor (TFT) 100, the zinc-tin nitrogen oxygen film as channel layer 140
The preparations such as skill, chemical vapor deposition process are formed.Wherein, since magnetron sputtering depositing operation is with good stability and controllable
Property, therefore preferably magnetron sputtering depositing operation.
Correspondingly, the present invention also provides a kind of film crystal control in order to realize any of the above-described kind of thin film transistor (TFT) 100
Preparation Method.It can also be top gate structure since thin film transistor (TFT) 100 of the invention may be either the thin film transistor (TFT) 100 of bottom grating structure
Thin film transistor (TFT) 100.Therefore, correspondingly, both including bottom grating structure as film crystal tube preparation method of the invention
Thin film transistor (TFT) preparation method, while further including the preparation method for having the thin film transistor (TFT) of top gate structure.
Wherein, the preparation method as the thin film transistor (TFT) of bottom grating structure includes step S100, using plated film work first
Skill is sequentially prepared to form gate electrode layer 120 and gate dielectric layer 130 on 110 surface of substrate.Then, then by step S200, in grid
130 surface of dielectric layer prepares to form channel layer 140.In turn, then by step S300, the source of being formed is prepared on 140 surface of channel layer
Electrode layer 150 and drain electrode layer 160 complete the preparation of the thin film transistor (TFT) 100 of bottom grating structure.Wherein, it should be noted that by
It cannot directly be contacted in source electrode with drain electrode, therefore there is preset interval between source electrode layer 150 and drain electrode layer 160.Together
When, since thin film transistor (TFT) 100 only can just have certain electric property after crystallization.Therefore, when by step S300,
After the preparation for completing source electrode layer 150 and drain electrode layer 160, it is also necessary to be retreated to prepared thin film transistor (TFT) 100
Fire processing, crystallizes it.
In addition, passing through step S100 ' first, using plated film when carrying out the preparation of thin film transistor (TFT) of top gate structure
Technique prepares to form channel layer 140 on 110 surface of substrate.Then, then by step S200 ', shape is prepared on 140 surface of channel layer
At gate dielectric layer 130.And then again by step S300 ', shape is prepared on the surface that channel layer 140 is not covered by gate dielectric layer 130
At source electrode layer 150 and drain electrode layer 160.Wherein, source electrode layer 150 and drain electrode layer 160 are located at gate dielectric layer 130
Two sides, so that source electrode layer 150 and drain electrode layer 160 are not directly contacted with and lead to short circuit.Finally pass through step again
S400 ' prepares to form gate electrode layer 120 on 130 surface of gate dielectric layer, thus complete the thin film transistor (TFT) 100 of top gate structure
Preparation.Herein, explanation is also needed, by step S400 ', completes the preparation of the thin film transistor (TFT) 100 of top gate structure
Later, it also needs to carry out after annealing crystallization treatment to prepared thin film transistor (TFT) 100, thus thin prepared by guarantee is final
Film transistor 100 has certain electric property.
It should be pointed out that whether preparing the thin of bottom grating structure in 100 preparation method of thin film transistor (TFT) of the invention
Film transistor 100 still prepares the thin film transistor (TFT) 100 of top gate structure, when preparing channel layer 140, prepared channel layer
140 be zinc-tin nitrogen oxygen film.Wherein, the chemical formula of zinc-tin nitrogen oxygen film are as follows: ZnaSnbNyOz.A is zinc in zinc-tin nitrogen oxygen film
The atom content of element, b are the atom content of tin element in zinc-tin nitrogen oxygen film, and y is the original of nitrogen in zinc-tin nitrogen oxygen film
Sub- content, z are the atom content of nitrogen in zinc-tin nitrogen oxygen film.
Further, the specific embodiment as film crystal tube preparation method of the invention, is preparing channel layer
When 140, it is preferred that prepared using magnetron sputtering depositing operation.That is, by using magnetron sputtering depositing operation system
The standby zinc-tin nitrogen oxygen film as channel layer 140.Wherein, when preparing zinc-tin nitrogen oxygen film using magnetron sputtering depositing operation,
Process gas is preferably nitrogen.Also, the flow of nitrogen can be 12sccm.In addition, influencing the work of the performance of zinc-tin nitrogen oxygen film
Skill parameter further includes deposition rate.And deposition rate is generally determined by the parameters such as sputtering power and deposition gases pressure.At this
Invention is prepared in a specific embodiment of thin film transistor (TFT) 100 using magnetron sputtering depositing operation, and sputtering power can be
100W -150W, the gas pressure intensity of deposition chamber can be 1.5Pa -2.5Pa.Preferably, magnetron sputtering depositing operation is being used
It prepares in zinc-tin nitrogen oxygen thin-film process, it is predetermined value that deposition rate is controlled by adjusting sputtering power and deposition gases pressure
When, the best performance of thin film transistor (TFT).Its sputtering power is preferably 120W, and the gas pressure intensity of deposition chamber is preferably
2Pa。
Further, the also annealing process of the zinc-tin nitrogen oxygen membrane structure as channel layer 140 is influenced.In general,
The parameter setting of annealing atmosphere, annealing temperature and annealing time is generally comprised when being made annealing treatment.Wherein, it needs to illustrate
It is that annealing process is substantially the process for controlling the crystallization of zinc-tin nitrogen oxygen film.The quality of zinc-tin nitrogen oxygen film crystalline quality is straight
The structure for influencing channel layer 140 is connect, to influence the performance parameter of thin film transistor (TFT) 100.And annealing temperature then directly affects zinc
The crystalline quality of tin nitrogen oxygen channel layer 140.Annealing temperature is too low, and zinc-tin nitrogen oxygen film is uncrystallizable, so that zinc-tin nitrogen oxygen
Film is integrally in high-impedance state, eventually leads to thin film transistor (TFT) 100 without performance.Annealing temperature is excessively high, and zinc-tin nitrogen oxygen film and grid are situated between
Interface and gate dielectric layer 130 between matter layer 130 may be damaged.It is serious, it will lead to the cracking of zinc-tin nitrogen oxygen film surface,
So that 100 penalty of thin film transistor (TFT).Therefore, it according to the crystallization temperature of zinc-tin nitrogen oxygen film, studies through a large number of experiments,
The final range for determining annealing temperature is 200 DEG C -400 DEG C.It preferably, can be 200 DEG C -250 DEG C.
Simultaneously as the length of annealing time also will affect the crystalline quality of zinc-tin nitrogen oxygen film.Annealing time is too short, zinc
Tin nitrogen oxygen film may not crystallize, be in high-impedance state, corresponding thin film transistor (TFT) is without performance.Annealing time is too long, then will lead to zinc
Interfacial state between tin nitrogen oxygen film and gate dielectric layer 130 increases, so that thin-film transistor performance deteriorates.Therefore, of the invention
In zinc-tin nitrogen oxygen film crystal tube preparation method, annealing time when being made annealing treatment can be 3 hours -10 hours.Preferably
3 hours.
Further, when carrying out annealing crystallization processing to post-depositional zinc-tin nitrogen oxygen film, since oxygen element is in zinc
Content in tin nitrogen oxygen film has critically important influence for the performance of prepared thin film transistor (TFT), a certain amount of oxygen element
In the presence of can effectively reduce carrier concentration, therefore, when carrying out after annealing processing to the thin film transistor (TFT) of preparation, annealing atmosphere is excellent
It is selected as oxygen-containing gas, such as: oxygen, to realize the control to oxygen element content in zinc-tin nitrogen oxygen film.
Finally, either before source-drain electrode depositing operation, or after source-drain electrode depositing operation, it is optionally right
Zinc-tin nitrogen oxygen thin film channel layer carries out ozone-plasma bombardment, reduces showing for zinc-tin nitrogen oxygen film intrinsic carrier concentration to play
As so that the electric current of thin film transistor (TFT) can turn off.Wherein, when using ozone-plasma bombardment zinc-tin nitrogen oxygen film, compared with senior engineer
The rate of doing work intrinsic carrier concentration of thin film transistor (TFT) can be made to reduce degree is larger, and it is smaller to open electric current, cause to be saturated mobility compared with
It is small.Lower operating power intrinsic carrier concentration can then reduced degree is smaller, and it is larger to open electric current, cause to be saturated mobility more
Greatly.Therefore, in zinc-tin nitrogen oxygen film crystal tube preparation method of the invention, when carrying out ozone-plasma bombardment, power is bombarded
It needs to be groped accordingly by many experiments with bombardment time.It should be noted that in film crystal control of the invention
In Preparation Method, when bombarding zinc-tin nitrogen oxygen film using ozone-plasma, bombardment power can be 200W-500W, and operating time is
5min-15min.Preferably, power 250W, operating time 10min.
For the clearer technical solution for illustrating film crystal tube preparation method of the invention and film of the invention
The performance of transistor makees further be described in detail to technical solution of the present invention with multiple embodiments individually below.It should
, it is noted that in the examples below, by taking the thin film transistor (TFT) for preparing bottom grating structure as an example.
Embodiment one
In the present embodiment, pass through step S110 first, select p+-Si/SiO2 (100) thermal oxide silicon wafer as substrate
110, and carry out cleaning, drying.The silicon wafer for preparing a piece of cleaning simultaneously, which is used as, accompanies piece.Wherein, the p-type heavy doping thermal oxide silicon wafer
Can also serve as substrate 110, gate electrode layer 120 and gate dielectric layer 130, eliminate and prepare gate electrode layer 120 and gate medium again
The step of layer 130, save process time and process resource.Also, by p-type heavy doping thermal oxide silicon wafer carry out cleaning and
Drying, the phenomenon that ensure that the cleanliness of substrate 110, avoid zinc-tin nitrogen oxygen channel layer 140 for polluting subsequent preparation.Wherein,
Gate dielectric layer 130 is p+-Si/SiO2(100) thermal oxide layer, thickness are about 100 ± 30nm.
In turn, then by step S120, at room temperature by trench mask plate fixed placement substrate 110 gate medium
130 surface of layer, and it is close to 130 surface of gate dielectric layer, it is heavy on (100) surface p+-Si/SiO2 using magnetron sputtering deposition method
Product zinc-tin nitrogen oxygen film is as channel layer 140.On piece is being accompanied to deposit one layer of zinc-tin nitrogen oxygen film simultaneously.Wherein, it is splashed using magnetic control
When jet device carries out the sputtering sedimentation of zinc-tin nitrogen oxygen film, used target is that (zinc-tin atomic ratio is metal Zinc-tin alloy target
6.0), working gas is nitrogen, and sputtering power 120W, gas pressure intensity 2Pa, depositing temperature is room temperature.The zinc finally prepared
Tin nitrogen oxygen film (zinc-tin atomic ratio be 6.66) with a thickness of 20nm, it is wide and it is long be respectively 1000 μm and 100 μm.
Then, then by step S130 using electron beam evaporation deposition equipment and granular metal Ni, Au evaporation material use
Mask plate method prepares Ni/Au (i.e. the alloy of Ni and Au) source electrode and Ni/Au drain electrode.First in zinc-tin nitrogen oxygen channel layer 140
Surface deposit the thin nickel metal film that a layer thickness is 50nm respectively, then redeposited a layer thickness is the golden metal foil of 20nm
Film.Metal material as source electrode and drain electrode must have good electric conductivity and Ohmic contact.Ni and zinc-tin nitrogen oxygen
Film can directly form good Ohmic contact, and Au has excellent electric conductivity and stability, not oxidizable, can be with lead shape
At excellent contact.Therefore, preparation Ni can be deposited by electron beam evaporation and soak Au, i.e., Ni/Au is as source electrode and drain electrode.
Finally, after having deposited source-drain electrode, carrying out after annealing processing again by step S140.Wherein, annealing temperature is
200 DEG C, annealing time is 3 hours, and annealing atmosphere is oxygen.
In addition, embodiment two, embodiment three and example IV are using the preparation process being the same as example 1, it is different
It is that, when step S140 carries out after annealing processing, after annealing temperature is respectively 250 DEG C, 300 DEG C, 350 DEG C, and annealing time is 3
Hour, annealing atmosphere is oxygen.
Using semiconductor parameter instrument (Keithley 4200) to the film using the embodiment of the present invention one to example IV
The curve of output and transfer characteristic for each thin film transistor (TFT) that 100 preparation method of transistor is prepared respectively are characterized, secondly by
The thin film transistor (TFT) of testing example two is in the photoresponse transfer curve including the 300nm-1200nm in visible wavelength range
To characterize its photoresponse ability.
Herein, it should be noted that the on-off ratio and field-effect mobility of zinc-tin nitrogen oxygen thin film transistor (TFT) 100 it is more big more
It is good；Subthreshold swing is used to characterize the switching speed of device, thus the smaller the better.Therefore it can pass through the zinc-tin nitrogen oxygen to preparation
The on-off ratio of thin film transistor (TFT) 100, field-effect mobility, threshold voltage and subthreshold swing are tested, prepared by detection
Zinc-tin nitrogen oxygen 100 performances of thin film transistor (TFT) it is whether good.
Wherein, the calculating of threshold voltage can be according to formula I1/2 DS=K1/2(VGS-VTH), by I1/2 DS-VGSMapping,
Linear segment is taken to be pushed into VGSAxis obtains threshold voltage.Subthreshold swing can then pass through formula s=(d (lgID)/dVG)-1Calculating obtains
?.Field-effect mobility can pass through formula:
μ=(dIDS/dVGS)(L/WC0VDS)
It is calculated.Wherein, IDSFor source-drain current；VGSFor gate voltage；VDSFor source-drain voltage；C0It is single for gate dielectric layer 130
Position area capacitance；L and W is then respectively the length and width of the zinc-tin nitrogen oxygen channel layer 140 between source electrode and drain electrode.dIDS/dVGS
For IDSTo VGSDerivative.On-off ratio is the ratio between on-state current and off-state current.
That Fig. 3 is provided is the output characteristic curve of zinc-tin nitrogen oxygen thin film transistor (TFT), V in figureDS、VGS、IDSRespectively represent source and drain
Voltage, grid voltage and source-drain current.Meanwhile (a), (b), (c), (d) respectively correspond embodiment one, embodiment two, reality in Fig. 3
Apply the thin film transistor (TFT) of example three and example IV preparation.Also, gate voltage VGS40V, step-length (△ V are risen to from 0VGS) it is 5V.
It is known from figures that, all zinc-tin nitrogen oxygen thin film transistor (TFT)s show good transistor characteristic, possess low shutdown electricity
Stream and apparent saturated characteristic, and leakage current phenomenon.The curve of output of device can be divided into two parts: linear zone and saturation
Area.With VDSIncrease show obvious saturated characteristic.And device is in lower VDSUnder reach saturation, this be exactly device reality
Now using desired.Zinc-tin nitrogen oxygen is n-type semiconductor, and grid and drain electrode institute's making alive are all forward biases, this shows
Thin film transistor (TFT) works in N-shaped enhancement mode.
It referring to fig. 4, is each thin film transistor (TFT) 100 prepared by embodiment one to example IV in source-drain voltage VDS=20V
When transfer characteristic curve.According to Fig. 4 and above-mentioned calculation formula, the correlation performance parameters of each thin film transistor (TFT) 100 are obtained, such as:
Cut-in voltage, field-effect mobility, threshold voltage, subthreshold swing and on-off ratio etc..Referring specifically to table 1.
Table 1
According to Fig. 4 and table 1, it can be seen that made respectively using embodiment one, embodiment two, embodiment three, example IV
The cut-in voltage of standby thin film transistor (TFT) 100 is constantly shuffled with the increase of after annealing temperature.Embodiment one, embodiment two,
The thin film transistor (TFT) 100 that embodiment three and example IV are prepared respectively works in enhancement mode.
By comparison, it was found that the thin film transistor (TFT) that embodiment one, embodiment two, embodiment three and example IV are prepared respectively
100 field-effect mobility is reduced with the increase of after annealing temperature, and on-off ratio first rises as the increase of after annealing temperature has
The trend reduced after height.
Also, the subthreshold swing for the thin film transistor (TFT) 100 that embodiment one to example IV is prepared respectively is with after annealing temperature
The increase of degree has raised trend after first reduction, and the subthreshold swing for the thin film transistor (TFT) 100 that wherein prepared by embodiment three is minimum,
Show that its switching speed is best.
According to table 1 it can be concluded that when annealing in oxygen, when after annealing temperature is 250 DEG C, the zinc-tin nitrogen of acquisition
The field-effect mobility of oxygen thin film transistor (TFT) 100 is 25.82cm2/ Vs, on-off ratio 106Magnitude, subthreshold swing 2.90V/
Decade, field-effect mobility is higher and on-off ratio is also larger, high comprehensive performance.Preferable after annealing temperature is 250 DEG C
When zinc-tin nitrogen oxygen thin film transistor (TFT) 100 function admirable.
It is transfer characteristic of the thin film transistor (TFT) of the preparation of above-described embodiment two under different wavelength range illumination referring to Fig. 5
Curve.As can be seen from FIG. 5, it is shortened from 1200nm to 300nm, the i.e. increase of incident light photons energy with lambda1-wavelength, it is real
The source-drain current that thin film transistor (TFT) prepared by example two is collected under identical gate voltage is applied to increase.Referring to Fig. 6 it is found that embodiment two
The photoconductance of prepared thin film transistor (TFT) is in 1.13Scm-1-1.87Scm-1.Wherein, photoconductance is to pass through following formulaIt is calculated.Wherein, IphFor illumination state source-drain current, IDFor dark-state source and drain electricity
Stream, V is gate voltage, and l is electrode length, and w is electrode spacing, and d is film thickness.
Referring to Fig. 7, be thin film transistor (TFT) prepared by embodiment two be 3.1eV in incident light photons energy η μ τ value (that is,
The product of quantum efficiency, mobility and carrier lifetime three), η μ τ value is greater than the a-Si under identical wavelength incident light illumination
And a-IGZO.Biggish η μ τ value shows that its photo-generated carrier lasts a long time, i.e., light responsing sensitivity is higher.The present invention mentions as a result,
Not only mobility is higher for the zinc-tin nitrogen oxygen thin film transistor (TFT) of confession, and band gap is narrow, can respond to visible light, can be used as interaction simultaneously
The display element and light sensitive component of formula display device.
In addition, referring to table 2, for respectively to the thin film transistor (TFT) of above-described embodiment one, embodiment two and embodiment three preparation
The detection of content of element result that the content of each element in channel layer is detected.Embodiment one is to reality as shown in Table 2
Nitrogen in thin film transistor (TFT) prepared by example three is applied, oxygen atom is than being respectively 1.99,1.73,0.52；Zinc-tin atomic ratio is respectively
6.38、5.88、5.97。
Table 2
Using ellipsometer measurement respectively to the channel layer of thin film transistor (TFT) prepared by embodiment one to embodiment three (that is,
Zinc-tin nitrogen oxygen film) absorption coefficient of light α tested, due to zinc-tin nitrogen oxygen be direct band-gap semicondictor, make (α h ν)2vs(h
ν) figure obtains the band gap of embodiment one to three zinc-tin nitrogen oxygen film of embodiment in 1.61-1.75eV referring to Fig. 8, and band gap is much
Band gap 3.1-3.3eV less than a-IGZO has responding ability to the light in visible wavelength range.
Embodiment five
In the present embodiment, pass through step S210 first, select p+-Si/SiO2 (100) thermal oxide silicon wafer as substrate
110, and carry out cleaning, drying.The step is identical as the step S110 in embodiment one.
Then, by step S220, at room temperature by trench mask plate fixed placement substrate 110 gate dielectric layer
130 surfaces, and it is close to 130 surface of gate dielectric layer, using magnetron sputtering deposition method, in p+-Si/SiO2 (100) thermal oxidation silicon
Piece surface deposits zinc-tin nitrogen oxygen film as channel layer 140.Wherein, splashing for zinc-tin nitrogen oxygen film is carried out using magnetron sputtering apparatus
When penetrating deposition, used target is metal Zinc-tin alloy target (zinc-tin atomic ratio is 6.0).Working gas is nitrogen gas.It splashes
Penetrating power is 120W, gas pressure intensity 2Pa.Depositing temperature is room temperature.(zinc-tin atomic ratio is the zinc-tin nitrogen oxygen film finally prepared
6.66) with a thickness of 15nm.
In turn, then by step S230 using electron beam evaporation deposition equipment and granular metal Ni, Au evaporation material it uses
Mask plate method prepares Ni/Au source electrode and Ni/Au drain electrode.I.e. the step is identical as the step S130 in embodiment one.
Finally, being made annealing treatment again by step S240.Wherein, annealing temperature is 250 DEG C, and annealing time is 3 small
When, annealing atmosphere is oxygen gas.That is, the step is identical as the step S140 in embodiment one.
Wherein, embodiment six and the preparation process having the same of embodiment five, only in step S220, using magnetron sputtering
When technique prepares zinc-tin nitrogen oxygen, with a thickness of 33nm.
The same film that embodiment five and embodiment six are prepared respectively using semiconductor parameter instrument (Keithley 4200)
The transfer characteristic of transistor 100 is characterized.
Referring to Fig. 9, respectively in source-drain voltage VDSWhen=20V, each film that embodiment five and embodiment six are prepared respectively
The transfer characteristic curve figure of transistor 100.According to Fig. 9, each thin film transistor (TFT) 100 prepared by embodiment five and embodiment six is obtained
Correlation performance parameters (field-effect mobility, cut-in voltage and on-off ratio etc.), while prepared by embodiment five and embodiment six
The performance parameter of thin film transistor (TFT) for preparing of thin film transistor (TFT) and mentioned-above embodiment two be compared, to observe difference
Influence of the zinc-tin nitrogen oxygen film thickness to the performance parameter of thin film transistor (TFT).It is specific as shown in table 3.
Table 3
According to Fig. 9 and table 3, it can be seen that the film crystal that embodiment five, embodiment two and embodiment six are prepared respectively
The cut-in voltage of pipe 100 is negative with the increase of zinc-tin nitrogen oxygen film thickness to be moved.Film prepared by embodiment five and embodiment two
Transistor 100 works in enhancement mode, and thin film transistor (TFT) 100 prepared by embodiment six works in depletion-mode.
By comparison subthreshold swing value discovery, the film that embodiment five, embodiment two and embodiment six are prepared respectively is brilliant
The subthreshold swing of body pipe 100 increases with the increase of zinc-tin nitrogen oxygen film thickness.Wherein subthreshold swing is smaller illustrates film crystalline substance
The switching speed of body pipe is better.
Also, 100 field-effect mobility of thin film transistor (TFT) that embodiment five, embodiment two and embodiment six are prepared respectively
Increase with the increase of zinc-tin nitrogen oxygen film thickness.
According to table 3 it can be concluded that comprehensive examine weighing apparatus, when the channel layer film thickness of thin film transistor (TFT) 100 is 20nm, performance is most
Excellent, the on-off ratio of the thin film transistor (TFT) 100 obtained is up to 106Magnitude, subthreshold swing 2.90, field-effect mobility are
25.82cm2/Vs。
Embodiment seven
In the present embodiment, select p+-Si/SiO2 (100) thermal oxide silicon wafer as substrate by step S310 first
110, and carry out cleaning, drying.The step is identical as the step S110 in embodiment one.
Then, by step S320, at room temperature by trench mask plate fixed placement substrate 110 gate dielectric layer
130 surfaces, and it is close to 130 surface of gate dielectric layer, using magnetron sputtering deposition method, in p+-Si/SiO2 (100) thermal oxidation silicon
Piece surface deposits zinc-tin nitrogen oxygen film as channel layer 140.Wherein, splashing for zinc-tin nitrogen oxygen film is carried out using magnetron sputtering apparatus
When penetrating deposition, used target is metal Zinc-tin alloy target (zinc-tin atomic ratio is 6.0).Working gas is nitrogen gas.It splashes
Penetrating power is 120W, gas pressure intensity 2Pa.Depositing temperature is room temperature.(zinc-tin atomic ratio is the zinc-tin nitrogen oxygen film finally prepared
6.66) with a thickness of 15nm.
In turn, then by step S330 using electron beam evaporation deposition equipment and granular metal Ni, Au evaporation material it uses
Mask plate method prepares Ni/Au source electrode and Ni/Au drain electrode.I.e. the step is identical as the step S130 in embodiment one.
Finally, being made annealing treatment again by step S340.Wherein, annealing temperature is 250 DEG C, and annealing time is 1 small
When.
Turn of the same thin film transistor (TFT) 100 using semiconductor parameter instrument (Keithley 4200) prepared by embodiment seven
Characteristic is moved to be characterized.
Referring to Figure 10, respectively in source-drain voltage VDSWhen=20V, each film crystal of embodiment five and the preparation of embodiment seven
The transfer characteristic curve figure of pipe 100.According to Figure 10, the correlated performance ginseng of each thin film transistor (TFT) 100 of the preparation of embodiment seven is obtained
Number (field-effect mobility, cut-in voltage and on-off ratio etc.), while the performance parameter of thin film transistor (TFT) prepared by embodiment seven
It is compared with the performance parameter of the thin film transistor (TFT) of the preparation of embodiment five, to observe anneal duration different in after annealing processing
Influence to thin film transistor (TFT).It is specific as shown in table 4.
Table 4
According to Figure 10 and table 4, it can be seen that the thin film transistor (TFT) 100 prepared respectively using embodiment five and embodiment seven
Threshold voltage is shuffled with the increase of anneal duration.The thin film transistor (TFT) 100 that embodiment five and embodiment seven are prepared respectively is equal
Work is in enhancement mode.
It is found by comparison subthreshold swing value, the thin film transistor (TFT) 100 that embodiment five and embodiment seven are prepared respectively
Subthreshold swing is not much different, and shows that its switching speed is not much different.
Also, 100 field-effect mobility of thin film transistor (TFT) that embodiment five and embodiment seven are prepared respectively is also with annealing
The increase of duration and increase, the on-off ratio of thin film transistor (TFT) 100 prepared by embodiment five and embodiment seven is with anneal duration
Increase and increases.
According to table 4 it can be concluded that synthesis examines weighing apparatus, when after annealing atmosphere is oxygen, the retrogressing of thin film transistor (TFT) 100
Fiery temperature is 250 DEG C, and best performance when anneal duration is 3h, the on-off ratio of the thin film transistor (TFT) 100 obtained is up to 106Magnitude,
Smaller subthreshold swing is 1.64, field-effect mobility 0.0422cm2/Vs。
Embodiment eight
In the present embodiment, select p+-Si/SiO2 (100) thermal oxide silicon wafer as substrate by step S310 first
110, and carry out cleaning, drying.The step is identical as the step S110 in embodiment 1.
Then, by step S320, at room temperature by trench mask plate fixed placement substrate 110 gate dielectric layer
130 surfaces, and it is close to 130 surface of gate dielectric layer, using magnetron sputtering deposition method, in p+-Si/SiO2 (100) thermal oxidation silicon
Piece surface deposits zinc-tin nitrogen oxygen film as channel layer 140.Wherein, splashing for zinc-tin nitrogen oxygen film is carried out using magnetron sputtering apparatus
When penetrating deposition, used target is metal Zinc-tin alloy target (zinc-tin atomic ratio is 3.50).Working gas is nitrogen gas.It splashes
Penetrating power is 120W, gas pressure intensity 2Pa.Depositing temperature is room temperature.(zinc-tin atomic ratio is the zinc-tin nitrogen oxygen film finally prepared
3.75) with a thickness of 20nm.
In turn, then by step S330 using electron beam evaporation deposition equipment and granular metal Ni, Au evaporation material it uses
Mask plate method prepares Ti/Au source electrode and Ti/Au drain electrode.I.e. the step is identical as the step S130 in embodiment one.
Finally, being made annealing treatment again by step S340.Wherein, annealing temperature is 300 DEG C, and annealing time is 3 small
When, annealing atmosphere is oxygen.
Wherein, embodiment nine and the preparation process having the same of embodiment eight steam the difference is that executing the step S330
Carry out ozone-plasma bombardment after plated electrode, operating power and when a length of 250W, 10min.
Embodiment ten, embodiment 11, embodiment 12 are different equally with the preparation process having the same of embodiment eight
Be to carry out step S330, carry out ozone-plasma bombardment before electrode evaporation, operating power and duration be respectively 250W,
10min；250W,5min；440W,5min.
Equally embodiment eight to embodiment 12 is prepared respectively using semiconductor parameter instrument (Keithley 4200) thin
The transfer characteristic of film transistor 100 is characterized.
Referring to Figure 11, respectively in source-drain voltage VDSWhen=20V, embodiment eight to embodiment 12 is prepared each thin respectively
The transfer characteristic curve figure of film transistor 100.According to Figure 11, each film crystal that embodiment eight is prepared to embodiment 12 is obtained
The correlation performance parameters (field-effect mobility, cut-in voltage and on-off ratio etc.) of pipe 100, as shown in table 5.
Table 5
According to Figure 11 and table 5, it can be seen that the thin film transistor (TFT) 100 prepared using embodiment eight is worked in depletion-mode.
The thin film transistor (TFT) 100 that embodiment nine to embodiment 12 is prepared respectively works in enhancement mode.Illustrate that ozone-plasma is banged
Hitting technique, that thin film transistor (TFT) operating mode can be made to be changed by depletion type is enhanced.
By comparison subthreshold swing value discovery, the thin film transistor (TFT) 100 that embodiment nine to embodiment 12 is prepared respectively
Subthreshold swing be significantly less than embodiment eight preparation thin film transistor (TFT), show ozone-plasma bombardment technique can reduce subthreshold
It is worth the amplitude of oscillation, the switching speed of embodiment nine to the thin film transistor (TFT) that embodiment 12 is prepared respectively is preferable.
Also, prepared by the thin film transistor (TFT) 100 prepared respectively by comparative example ten and embodiment 12, embodiment ten
Thin film transistor (TFT) field-effect mobility it is maximum, on-off ratio is maximum, i.e., after electrode be deposited, carries out ozone-plasma and bang
It hits, and ozone-plasma bombards the field-effect mobility of the thin film transistor (TFT) prepared when technological work condition is 250W, 10min most
Greatly, on-off ratio is maximum.
By the field-effect mobility and on-off ratio of the thin film transistor (TFT) that comparative example nine and embodiment ten are prepared respectively,
Ozone-plasma is bombarded technique and the sequencing of vapor deposition source-drain electrode technique and is influenced less on the performance of thin film transistor (TFT).
According to table 5 it can be concluded that synthesis examines weighing apparatus, all optionally carried out before or after depositing source-drain electrode technique
Ozone-plasma bombardment, to play the effect that transistor current can turn off, and ozone-plasma bombardment technological work condition is
When 250W, 10min, the performance of thin film transistor (TFT) 100 is more excellent.
Embodiment 13
In the present embodiment, select p+-Si/SiO2 (100) thermal oxide silicon wafer as substrate by step S310 first
110, and carry out cleaning, drying.The step is identical as the step S110 in embodiment one.
Then, by step S320, at room temperature by trench mask plate fixed placement substrate 110 gate dielectric layer
130 surfaces, and it is close to 130 surface of gate dielectric layer, using magnetron sputtering deposition method, in p+-Si/SiO2 (100) thermal oxidation silicon
Piece surface deposits zinc-tin nitrogen oxygen film as channel layer 140.Wherein, splashing for zinc-tin nitrogen oxygen film is carried out using magnetron sputtering apparatus
When penetrating deposition, used target is metal Zinc-tin alloy target (zinc-tin atomic ratio is 6.0).Working gas is nitrogen gas.It splashes
Penetrating power is 120W, gas pressure intensity 2Pa.Depositing temperature is room temperature.(zinc-tin atomic ratio is the zinc-tin nitrogen oxygen film finally prepared
6.66) with a thickness of 20nm.
In turn, then by step S330 using electron beam evaporation deposition equipment and granular metal Ni, Au evaporation material it uses
Mask plate method prepares Ni/Au source electrode and Ni/Au drain electrode.I.e. the step is identical as the step S130 in embodiment one.
Finally, being made annealing treatment again by step S340.Wherein, annealing temperature is 250 DEG C, and annealing time is 3 small
When, annealing atmosphere is oxygen.
Wherein, embodiment 14 and the preparation process having the same of embodiment 13 are retreated only in step S340
When fire processing, annealing atmosphere is air.
It is same that semiconductor parameter instrument (Keithley 4200) is used to prepare embodiment 13 and embodiment 14 respectively
The transfer characteristic of thin film transistor (TFT) 100 is characterized.
Referring to Figure 12, respectively in source-drain voltage VDSWhen=15V, embodiment 13 and embodiment 14 prepare each respectively
The transfer characteristic curve figure of thin film transistor (TFT) 100.According to Figure 12, each film prepared by embodiment 13 and embodiment 14 is obtained
The correlation performance parameters (field-effect mobility, cut-in voltage and on-off ratio etc.) of transistor 100, as shown in table 6.
Table 6
According to Figure 12 and table 6, it can be seen that the thin film transistor (TFT) prepared respectively using embodiment 13 and embodiment 14
100 work in enhancement mode.
By comparison subthreshold swing value discovery, the subthreshold swing of thin film transistor (TFT) 100 prepared by embodiment 13 is high
In embodiment 14, show that the switching speed of thin film transistor (TFT) prepared by embodiment 14 is preferable, i.e., that anneals in air is thin
The switching speed of film transistor is preferable.
Also, 100 field-effect mobility of thin film transistor (TFT) prepared by embodiment 13 is higher than embodiment 14, embodiment ten
The on-off ratio of the thin film transistor (TFT) 100 of three preparations is higher than embodiment 14, i.e., the field for the thin film transistor (TFT) annealed in oxygen is imitated
Answer mobility and on-off ratio all higher.
According to table 6 it can be concluded that synthesis examines weighing apparatus, when after annealing atmosphere is oxygen, the performance of thin film transistor (TFT) 100
More excellent, the on-off ratio of the thin film transistor (TFT) 100 obtained is up to 106Magnitude, smaller subthreshold swing is 4.41, field-effect mobility
For 14.46cm2/Vs。
Therefore, a kind of thin film transistor (TFT) 100 disclosed by the invention, can be by adjusting the zinc-tin atom of zinc-tin nitrogen oxygen film
Than technological parameters such as, after annealing atmosphere and after annealing temperature, the threshold voltage of regulation thin film transistor (TFT) 100 is realized, optimize subthreshold
It is worth the performances such as the amplitude of oscillation and on-off ratio, and then acquisition subthreshold swing is smaller, switch is bigger, and field-effect mobility is biggish thin
Film transistor 100.Field-effect mobility using zinc-tin nitrogen oxygen film as the thin film transistor (TFT) 100 of channel layer 140 may be up to
30cm2/Vs.Zinc-tin nitrogen oxygen thin film transistor (TFT) is to visible light-responded simultaneously, and light responsing sensitivity is higher, better than amorphous silicon and non-
Brilliant indium gallium zinc oxygen thin film transistor (TFT).Its thin film transistor (TFT) 100 can be used as the display element and light sensation of interactive display unit simultaneously
Element.Additionally due to zinc-tin element is cheap and recyclable, therefore cocoa substantially reduces production cost and the pollution to environment
Property.
In addition, the present invention also provides a kind of interactive display units.The interactive display unit include display unit and
Light sensing unit, display unit are that as above any thin film transistor (TFT), light sensing unit are that film described in embodiment two is brilliant
Body pipe.The display unit that zinc-tin nitrogen oxygen thin film transistor (TFT) can be used as interactive display unit can but also as light sensing unit
Effectively solve compatibility issue.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
Limitations on the scope of the patent of the present invention therefore cannot be interpreted as.It should be pointed out that for those of ordinary skill in the art
For, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to guarantor of the invention
Protect range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (8)
1. a kind of thin film transistor (TFT), which is characterized in that including substrate, gate electrode layer, gate dielectric layer, channel layer, source electrode layer and
Drain electrode layer；
Wherein, the gate electrode layer is formed in the substrate surface；The gate dielectric layer is formed in the gate electrode layer surface；Institute
It states channel layer and is formed in the gate dielectric layer surface；The source electrode layer and the drain electrode layer are both formed in the channel layer table
Face, and there is interval between the source electrode layer and the drain electrode layer；
Or
The channel layer is formed in the substrate surface；The gate dielectric layer is formed in the channel layer surface；The source electrode
Layer and the drain electrode layer are respectively formed in the surface that the channel layer is not covered by the gate dielectric layer, and the source electrode layer
The two sides of the gate dielectric layer are located at the drain electrode layer；The gate electrode layer is formed in the gate dielectric layer surface；
Wherein, the channel layer is zinc-tin nitrogen oxygen film；
The chemical formula of the zinc-tin nitrogen oxygen film are as follows: ZnaSnbNyOz；
A is the atom content of Zn-ef ficiency in the zinc-tin nitrogen oxygen film, and b is that the atom of tin element in the zinc-tin nitrogen oxygen film contains
Amount, y are the atom content of nitrogen in the zinc-tin nitrogen oxygen film, and z is that the atom of oxygen element in the zinc-tin nitrogen oxygen film contains
Amount；
In the zinc-tin nitrogen oxygen film, nitrogen oxygen element atomic percent are as follows: 0.50-2.00.
2. thin film transistor (TFT) according to claim 1, which is characterized in that nitrogen oxygen element atom in the zinc-tin nitrogen oxygen film
Percentage is 1.73.
3. thin film transistor (TFT) according to claim 1, which is characterized in that in the zinc-tin nitrogen oxygen film, the Zn-ef ficiency
With the atomic ratio of the tin element are as follows: 2-10.
4. thin film transistor (TFT) according to claim 1, which is characterized in that the zinc-tin nitrogen oxygen film with a thickness of 10nm-
100nm。
5. a kind of film crystal tube preparation method, which is characterized in that be used to prepare the described in any item films of Claims 1-4
Transistor includes the following steps:
It is sequentially prepared to form gate electrode layer and gate dielectric layer in substrate surface using coating process；In the gate dielectric layer surface system
It is standby to form channel layer；It prepares to form source electrode layer and drain electrode layer in the channel layer surface, completes the described thin of bottom grating structure
After the preparation of film transistor, after annealing processing is carried out；There is interval between the source electrode layer and the drain electrode layer；
Or
It prepares to form the channel layer in the substrate surface using coating process；Described in preparing and to be formed in the channel layer surface
Gate dielectric layer；It is not prepared to form the source electrode layer and the electric leakage by the surface that the gate dielectric layer covers in the channel layer
Pole layer；Wherein, the source electrode layer and the drain electrode layer are located at the two sides of the gate dielectric layer；In the gate dielectric layer
Surface prepares to form the gate electrode layer；After the preparation for completing the thin film transistor (TFT) of top gate structure, after annealing processing is carried out；
Wherein, the channel layer is zinc-tin nitrogen oxygen film；
The chemical formula of the zinc-tin nitrogen oxygen film are as follows: ZnaSnbNyOz；
A is the atom content of Zn-ef ficiency in the zinc-tin nitrogen oxygen film, and b is that the atom of tin element in the zinc-tin nitrogen oxygen film contains
Amount, y are the atom content of nitrogen in the zinc-tin nitrogen oxygen film, and z is that the atom of oxygen element in the zinc-tin nitrogen oxygen film contains
Amount；
After completing the preparation of thin film transistor (TFT) of the bottom grating structure or completing the preparation of thin film transistor (TFT) of top gate structure,
When carrying out after annealing processing, annealing temperature are as follows: 200 DEG C -400 DEG C, annealing time is 3 hours -10 hours；Annealing atmosphere
For oxygen-containing gas.
6. film crystal tube preparation method according to claim 5, which is characterized in that forming the source electrode layer and institute
It before stating drain electrode layer or is formed after the source electrode layer and the drain electrode layer, further includes at ozone-plasma bombardment technique
The step of reason；
Wherein, the bombardment power of the ozone-plasma bombardment technique are as follows: 200W -500W, bombardment time are 5min -15min.
7. film crystal tube preparation method according to claim 5, which is characterized in that the channel layer uses magnetron sputtering
Depositing operation prepares to be formed；And
When forming the channel layer using the magnetron sputtering depositing operation, depositing operation gas is nitrogen, the pressure of deposition chambers
It is by force 1.5Pa -2.5Pa, sputtering power is 100W -150W.
8. a kind of interactive display unit, it is characterised in that display unit and light sensing unit, including Claims 1-4 are any
Thin film transistor (TFT) described in.
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| US20090050884A1 (en) * | 2007-08-02 | 2009-02-26 | Yan Ye | Thin film transistors using thin film semiconductor materials |
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| US20120061661A1 (en) * | 2010-09-13 | 2012-03-15 | Au Optronics Corporation | Semiconductor structure and fabricating method thereof |
| WO2013106166A1 (en) * | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Thin film semiconductors made through low temperature process |
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| US20090050884A1 (en) * | 2007-08-02 | 2009-02-26 | Yan Ye | Thin film transistors using thin film semiconductor materials |
| CN102169904A (en) * | 2010-01-15 | 2011-08-31 | 三星电子株式会社 | Display substrate |
| US20120061661A1 (en) * | 2010-09-13 | 2012-03-15 | Au Optronics Corporation | Semiconductor structure and fabricating method thereof |
| WO2013106166A1 (en) * | 2012-01-13 | 2013-07-18 | Applied Materials, Inc. | Thin film semiconductors made through low temperature process |
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