CN117642061B - Homojunction and resistive random access memory based on platinum doped tin oxide - Google Patents
Homojunction and resistive random access memory based on platinum doped tin oxide Download PDFInfo
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- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 20
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Abstract
The invention relates to preparation of transparent conductive oxide film materials, design of a homojunction and a resistive random access memory, in particular to a homojunction and a resistive random access memory based on platinum doped tin oxide. The invention aims to solve the problems of lattice mismatch and poor conductivity caused by incomplete lattice matching of different materials, and the quality and stability of a device damaged by chemical reaction existing at interfaces between different materials. The main scheme includes depositing one layer of SnO 2/Mg film on the SnO 2/Pt film via PLD technology to form homogeneous junction and sputtering Cu and Ag electrodes. Then preparing an ATO film on the Si substrate as a bottom electrode, then preparing the SnO 2 -based homojunction on the ATO film as a resistive layer, and finally preparing the top Au electrode.
Description
Technical Field
The invention relates to preparation of transparent conductive oxide film materials, design of a homojunction and a resistive random access memory, in particular to a homojunction and a resistive random access memory based on platinum doped tin oxide.
Background
With the development of technology, the importance of transparent conductive films (TCOs) in electronic devices is increasing. TCO materials play a key role in modern devices such as touch screens, flat panel displays, solar panels, and smart windows. However, conventional TCO materials such as indium tin oxide have drawbacks of high cost, scarcity of reserves, and environmental problems, and thus, searching for alternative materials is an urgent need.
Tin oxide (SnO 2) is used as a typical IV-VI binary metal oxide semiconductor, and has the advantages of large forbidden bandwidth, high electron mobility and the like. Meanwhile, the material is low in price, nontoxic and harmless, and excellent in the fields of photoelectricity, gas sensitivity, wet sensitization, pressure sensitivity and the like. However, direct light emission cannot be realized due to the large forbidden bandwidth; the carrier concentration is also to be increased. Therefore, in order to improve the performance of SnO 2, a series of optimizations, such as preparation process optimization and element doping, are required. The doping can effectively adjust the performance of the SnO 2 film, obviously improve the conductivity, change the electronic energy band structure and further improve the conductivity and the transparency. The SnO 2 is a potential substitute material of ITO and is widely applied to the fields of manufacturing semiconductor sensors, optoelectronic devices, flexible electronics and the like, such as photodiodes, solar cells, photoresistors and the like. In addition, snO 2 as a semiconductor material can be used for information storage and has potential application prospect in a Resistive Random Access Memory (RRAM).
By doping different impurity elements, the electronic properties of the tin oxide film, including conductivity and electronic energy band structure, can be regulated. Furthermore, with nanoscale SnO 2 materials, such as nanowires or nanorods, higher storage densities and properties can be achieved, which is critical to achieving programmable RRAM.
In general, the research of the SnO 2 -based transparent conductive film has important scientific and application values in the aspects of pushing advanced electronic devices, improving energy conversion efficiency, improving display technology, realizing flexible electronic devices and the like. Research background of doped SnO 2 thin film devices stems from the need for TCO materials, the advantages of SnO 2 materials, and wide application in the fields of electronics, optoelectronics and energy; through the design and application of SnO 2 -based homojunction and resistive random access memory, the device is expected to play an important role in the field of information storage. RRAM is regarded as an important candidate of the next generation memory as a novel nonvolatile memory, and has the advantages of high storage density, low power consumption, quick reading and writing and the like. The material based on the platinum doped tin oxide may become a key for realizing a high-performance resistive random access memory due to the excellent electrical property and stability, and the application research of the material in the resistive random access memory is a challenging and potential field, and the memory technology with high performance and low power consumption can be realized by regulating the property and structure of the tin oxide material, so that the material is expected to play an important role in the future memory market.
Disclosure of Invention
The invention aims to solve the problems of lattice mismatch and poor conductivity caused by incomplete lattice matching of different materials, chemical reaction existing at interfaces between different materials, further damage to the quality and stability of devices, and the like.
The invention adopts the following technical means to realize the purposes:
A homojunction based on platinum doped tin oxide is formed by depositing a layer of SnO 2 on a SnO 2:Pt film by PLD technology and a Mg film, and sputtering Cu and Ag electrodes.
In the technical scheme, the preparation of the SnO 2:Pt film comprises the following steps:
Step 2.1, pretreatment of a substrate: ultrasonically cleaning a substrate by using a mixed solution of ethanol and acetone, then ultrasonically cleaning again by using deionized water, and finally drying for later use by using nitrogen;
step 2.2, preparing a precursor liquid: mixing a specific amount of SnCl 2·5H2 O, absolute ethyl alcohol, H 2PtCl6·6H2 O, HCl and polyvinylpyrrolidone to prepare a precursor solution, and storing the precursor solution in a refrigerator for later use;
Step 2.3, preparing a doped SnO 2:Pt film: and preparing a SnO 2:Pt film on the pretreated substrate by adopting an ultrasonic spray pyrolysis method, and carrying out annealing treatment.
In the technical scheme, in the step 2.2, adding the weighed 18.562gSnCl 2·5H2 O and 50ml of absolute ethyl alcohol into a beaker, then weighing 21.3ml of 0.02g/ml H 2PtCl6·6H2 O solution, and placing the solution on a magnetic stirrer for uniform stirring; to the mixed solution, 0.2ml of 37% HCl and 100mg of polyvinylpyrrolidone were added to promote dispersion of platinum, and after stirring for 6 hours at a constant temperature of 30 ℃ on a magnetic stirrer, the solution was stored in a refrigerator at 4 ℃ for subsequent use.
In the technical scheme, in the step 2.3, firstly, a pretreated Si substrate is placed on a heating table, then the prepared precursor liquid is taken out for ultrasonic treatment, then the precursor liquid is uniformly sprayed on the substrate through ultrasonic spraying, and meanwhile, pyrolysis treatment is carried out, and the pyrolysis temperature is controlled to be 180 ℃ and the time is controlled to be 30min, so that the SnO 2:Pt film is obtained; and (3) taking out and then placing the steel into a rapid annealing furnace for annealing treatment, wherein the annealing temperature is 900 ℃, the annealing time is 1h, and the annealing atmosphere is Ar.
In the technical scheme, the deposition of the SnO 2:Mg film layer on the SnO 2:Pt film layer comprises the following steps:
Step 3.1, blocking a part of SnO 2 by a mask plate; the size and shape of the material is adjusted to obtain a specific gear-like mask (see fig. 3), thereby increasing the contact area of the electrode and the current transmission path, possibly improving current transmission. Controlling the length and width of the homojunction can affect the carrier injection and diffusion of electrons and holes, which in turn affects the current characteristics and switching speed of the device.
Step 3.2, preparing a doped SnO 2: precursor liquid containing SnCl 2·5H2O、MgCl2·6H2 O, HCl and polyvinylpyrrolidone is prepared first, and then a SnO 2:Mg film is prepared on a SnO2:Pt film through a Pulse Laser Deposition (PLD) technology.
In the technical scheme, in the step 3.2, 18.562g of SnCl 2·5H2 O and 0.1673g of MgCl 2·6H2 O are taken and placed on a magnetic stirrer to be uniformly stirred; then 0.2ml of 37% HCl and 100mg polyvinylpyrrolidone are added into the mixed solution to promote the solution to disperse and prevent agglomeration, and finally the precursor solution is placed on a magnetic stirrer to be stirred for 6 hours at the constant temperature of 30 ℃, and then the solution is stored in a refrigerator at 4 ℃ for later film deposition.
The invention also provides a preparation method of the resistance random access memory based on the platinum doped tin oxide, which comprises the following steps: firstly, preparing an ATO (SnO 2: sb) film on a Si substrate as a bottom electrode, then preparing the SnO 2 homojunction on the ATO film as a resistive layer, and finally preparing a top Au electrode.
In the above technical scheme, the preparation method of the ATO film comprises the following steps:
18.562g of SnCl 2·5H2 O and 1.1259g of SbCl 3 are taken and placed on a magnetic stirrer to be uniformly stirred; adding 0.2ml of 37% HCl and 100mg of polyvinylpyrrolidone into the mixed solution to promote solution dispersion and prevent agglomeration, and finally placing the precursor solution on a magnetic stirrer to stir for 6 hours at the constant temperature of 30 ℃, and storing the solution in a refrigerator at 4 ℃ for later film deposition; and then preparing the ATO film by taking single crystal Si as a substrate and PLD technology.
Because the invention adopts the technical means, the invention has the following excellent effects:
1. The nano-scale SnO 2 -based film is used as a resistive layer material, so that higher storage density and performance can be realized;
2. the system has a faster response speed, can switch states faster, and realizes high-speed data read-write operation, which is important for the performance of the memory;
3. Low power consumption: snO 2 resistive random access memory typically has lower power consumption, requiring lower current between switching resistive and conductive states, which helps to reduce energy consumption;
4. Long service life: the SnO 2 resistive layer has longer service life and better reliability, can still keep stability after being switched for a plurality of times, and reduces the degradation and failure risk of the memory;
5. The size controllability is good: the size of the SnO 2 resistive switching layer can be controlled relatively easily, which helps to achieve high density memory chips and smaller memory cells;
6. The stability is good: the SnO 2 resistive layer is generally more stable under the conditions of high temperature and humidity, and is not easily influenced by environmental factors;
7. the homojunction structure disclosed by the invention takes different doped SnO 2 films as the P-type layer and the N-type layer, and the structure and the performance of the homojunction are controlled, so that an anti-blocking layer high-conductivity region without rectifying effect can be formed; the same type of SnO 2 material is used, so that the matching performance is good, the lattice defects and interface energy are effectively reduced, and the performance of the device is improved; the preparation is simple, only one material is needed, so that the complexity and cost of the preparation process are reduced, and the large-scale manufacturing is facilitated; the conductivity and electron flow properties of the device can be controlled by adjusting the doping concentrations of different regions (Pt and Mg), so that the performance of the semiconductor device is optimized; the electron transmission speed can be improved, and the resistance can be reduced, so that higher working frequency can be realized; since the same SnO 2 material is used, the material is generally more stable under high temperature conditions, and material separation or failure is not easy to occur;
8. The electrode prepared by the invention has excellent photoelectric property and resistance change storage property;
9. the invention is compatible with the existing industrialized semiconductor technology, and is suitable for preparing large-area devices.
Drawings
FIG. 1: a homojunction structure schematic diagram;
fig. 2: RRAM schematic;
Fig. 3: and a mask plate.
Reference numerals illustrate:
1 is Si, 2 is SnO 2 is Pt, 3 is SnO 2 is Mg, 4 is Cu, 5 is Ag, 6 is top electrode Au, 7 is Si/ATO, 8 is bottom electrode SnO 2 is Mg, 9 is storage medium SnO 2 is Pt, 10 is shielding layer and 11 is mask plate.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail. While the invention will be described and illustrated in conjunction with certain specific embodiments, it will be understood that it is not intended to limit the invention to these embodiments alone. On the contrary, the invention is intended to cover modifications and equivalent arrangements included within the scope of the appended claims.
In addition, numerous specific details are set forth in the following description in order to provide a better illustration of the invention. It will be understood by those skilled in the art that the present invention may be practiced without these specific details.
The invention aims to provide a novel RRAM based on a homojunction and a multilayer resistive material of a SnO 2 film, which is prepared by taking the same material SnO 2:Pt as an N-type layer and SnO 2:Mg as a P-type layer so as to solve the problems of lattice mismatch and poor conductivity caused by incomplete lattice matching of different materials, and further damage to the quality and stability of the homojunction due to chemical reaction existing at interfaces between different materials; the material has good matching property, is beneficial to reducing lattice defects and interface energy, and improves the performance of the device; only one material is needed, so that the complexity and cost of the preparation process are reduced, and the large-scale manufacturing is facilitated; the conductivity and the electron flow property of the device can be controlled by adjusting the doping concentration of different areas (Pt and Mg), so that the electron transmission speed is improved, the resistance is reduced, and higher working frequency is realized; since the same SnO 2 material is used, the device is generally more stable at high temperatures and is less prone to material separation or failure. The RRAM adopting multiple layers of SnO 2 materials (ATO is used as a bottom electrode, snO 2 is used as a Pt film and SnO 2 is used as a resistance change layer material) can store a plurality of data bits in a tiny space, so that high-density data storage is realized, the service life of a battery is prolonged, the energy consumption is reduced, and the manufacturing cost is reduced. The switching speed and resistance change in the using process of the device can be improved by using the double-layer structure with the same property; the multi-state storage can be realized, namely, the switching between different resistance states can be realized, so that more storage states are provided, and the storage capacity and the information storage density are increased; the operation power consumption of the memory can be reduced, one material can be used for low-power-consumption reading operation, and the other material can be used for rapid writing operation, so that the optimization of power consumption is realized; in addition, the resistive random access material has multifunctional application, and interface effect and interaction are effectively reduced by designing and optimizing a material structure, so that the resistive random access material can be used for a resistive random access memory and other electronic devices such as logic gates, sensors and the like.
The invention aims at realizing the following steps:
Step 1, substrate pretreatment (monocrystalline silicon): firstly, placing a monocrystalline silicon substrate into a mixed solution of deionized water, absolute ethyl alcohol and acetone for ultrasonic cleaning; taking out, ultrasonically cleaning with deionized water, finally drying with nitrogen, and preserving for later use;
Specific operations may be referred to as follows: the monocrystalline silicon substrate was placed in deionized water and cleaned with ultrasonic waves for 10 minutes to remove dirt and impurities from the surface. Ultrasonic cleaning is then performed with a mixture of ethanol and acetone to further clean the surface. After the cleaning is completed, the substrate is dried by nitrogen and stored for standby.
Step 2, preparing a precursor liquid: a certain amount of SnCl 2·5H2 O solution and H 2PtCl6·6H2 O are weighed and dissolved in absolute ethyl alcohol, and simultaneously a trace amount of HCl and polyvinylpyrrolidone (PVP) are added to prepare a Pt doped precursor solution, wherein the solution is black brown.
Specific operations are referred to as follows: adding the weighed 18.562gSnCl 2·5H2 O and 50ml of absolute ethyl alcohol into a beaker, then weighing 21.3ml of 0.02g/ml H 2PtCl6·6H2 O solution, and placing the solution on a magnetic stirrer for uniform stirring; and adding a trace amount of HCl and polyvinylpyrrolidone (PVP) into the mixed solution to promote the dispersion of platinum and prevent the platinum from agglomerating in the solution, placing the solution on a magnetic stirrer, stirring for 6 hours at the constant temperature of 30 ℃, and storing the solution in a refrigerator at 4 ℃ for later use of a sputtered film.
Step 3, preparing a Pt doped SnO 2 film (SnO 2: pt) by an ultrasonic spray pyrolysis method: the improvement of film formation quality can be achieved by controlling the experimental temperature, the flow rate of the experimental gas, the composition of the reaction solution, the distance from the nozzle to the substrate, the deposition time, and the like.
Specific operations are referred to as follows:
1. the pretreated substrate is placed on a heating stage and the appropriate temperature and position are adjusted.
2. And taking out the prepared precursor liquid, and carrying out ultrasonic treatment to uniformly disperse the solution. And then uniformly spraying the dispersed precursor liquid on a substrate through ultrasonic spraying, and simultaneously carrying out pyrolysis treatment. Controlling pyrolysis temperature (180 ℃) and time (30 min) to obtain a Pt doped SnO 2 film; and (3) taking out and then placing the steel into a rapid annealing furnace for annealing treatment, wherein the annealing temperature is 900 ℃, the annealing time is 1h, and the annealing atmosphere is Ar.
Step 4, snO 2, preparation of Mg film:
18.562gSnCl 2·5H2 O and 0.1673gMgCl 2·6H2 O are added into a beaker, and then the beaker is placed on a magnetic stirrer to be stirred uniformly; then 0.2ml of 37% HCl and 100mg of polyvinylpyrrolidone are added into the mixed solution to promote the solution to disperse and prevent agglomeration, and finally the precursor solution is placed on a magnetic stirrer to be stirred for 6 hours at the constant temperature of 30 ℃, and then the solution is stored in a refrigerator at 4 ℃ for later film deposition.
Preparing a film by a pulse laser deposition technology:
Material and equipment preparation:
preparing a target material: and (3) centrifugally drying the prepared precursor liquid, taking out and pressing the precursor liquid into a target material.
Cleaning a substrate: the monocrystalline silicon substrate was placed in deionized water and cleaned with ultrasonic waves for 10 minutes to remove dirt and impurities from the surface. Ultrasonic cleaning is then performed with a mixture of ethanol and acetone to further clean the surface. After the cleaning is completed, the substrate is dried by nitrogen and stored for standby.
And (3) a vacuum system: a vacuum system was prepared for performing the PLD process under low pressure or ultra-high vacuum conditions. The vacuum system includes a vacuum chamber, an evacuation system, and a gas handling system.
PLD process:
1. placing the cleaned substrate into the chamber.
2. Atmosphere control: the vacuum chamber is pumped down to the desired low pressure or ultra-high vacuum state. This is to create an environment with little or no gas to prevent the formation of impurities or undesired chemical reactions in the tin oxide film.
3. Target aiming: the prepared target was mounted on a target gun of a PLD system and aimed at the substrate.
4. Laser irradiation: the target is irradiated by a pulse laser, and part of substances on the surface of the target are evaporated or peeled off by the energy of the laser and deposited on the substrate (the deposition pressure is 10 < -4 > Pa).
5. Film growth: the stripped target material is deposited on the surface of the substrate to form a thin film. The thickness of the thin film can be adjusted by controlling the time of laser irradiation (12 min) and the distance between the target and the substrate (75 mm).
6. Film post-treatment: cooling, solidifying and annealing: after the PLD is completed, the film needs to be cooled and solidified. This may be done in a vacuum chamber or after the substrate is removed. And then taking out the film, and placing the film in a rapid annealing furnace for annealing treatment, wherein the annealing temperature is 900 ℃, the annealing time is 1h, and the annealing atmosphere is Ar.
Step 5, preparation of homojunction (device diagram is shown in fig. 1): the prepared SnO 2 -Pt film is used as a bottom electrode, and then a layer of Mg-doped SnO 2 film (SnO 2 -Mg) is deposited on the film by using a mask plate by adopting PLD technology to serve as a P-type layer. By adjusting deposition parameters such as temperature, pressure, deposition rate and the like, the structure and the performance of the homojunction are controlled, and an anti-blocking layer high-conductivity region without rectification effect is formed with the semiconductor.
Step 6, preparing RRAM: ATO (Sb doped SnO 2) is used as a bottom electrode; then, a SnO 2 Pt film and a SnO 2 Mg film double-layer film are used as a resistive layer material; pt was used as the top electrode to prepare RRAM and corresponding tests were performed.
Reference is made to the following: an ATO film was prepared as a bottom electrode in the same manner as in step 4. 18.562gSnCl 2·5H2 O and 1.1259gSbCl 3 are added into a beaker, and the beaker is placed on a magnetic stirrer to be stirred uniformly; adding a trace of HCl and polyvinylpyrrolidone into the mixed solution to promote solution dispersion and prevent agglomeration, and finally placing the precursor solution on a magnetic stirrer to stir for 6 hours at the constant temperature of 30 ℃, and storing the solution in a refrigerator at 4 ℃ for later film deposition; then, preparing an ATO film by taking single crystal Si as a substrate and PLD technology; then preparing SnO 2, pt film and SnO 2, mg film double-layer film on the ATO film as the resistive layer material (the operation steps are as step three and step four); then, the preparation of the upper electrode Pt (the top electrode is prepared by a metal mask method, a metal copper mesh with the aperture of 100 μm×100 μm is used as a mask, and the copper mesh is covered on the surface of the sample, so that only the cavity area can deposit a metal film, thereby preparing the top electrode with the aperture of 100 μm×100 μm) is performed as follows: firstly, adhering a prepared SnO 2 -Pt and SnO 2 -Mg double-layer film substrate material to a Cu net with a circular hole-shaped structure by using a high-temperature adhesive tape, placing the Cu net into an evaporation cavity, placing plated Au particles on an evaporation boat (quartz boat), and closing a cabin door; vacuum pumping to below 10 -5 Pa; and then starting to increase the current until the plating material starts to melt, at the moment, regulating the current, stabilizing the evaporation rate at 1A/s, regulating the rotating speed to 100 r/min, and depositing for 2min to remove impurities on the surface of the plating material. And then starting to evaporate the electrode (200 nm) with the required thickness, sequentially closing various valves, closing the molecular pump, closing the mechanical pump after the rotating speed is zero, and closing the cooling water machine. Finally, removing the mask from the electrode by plasma etching, and repeatedly cleaning and treating the homojunction with deionized water to remove any residual impurities, mask residues or surface impurity substances, thereby obtaining the SnO 2 -based RRAM device, as shown in figure 2.
Through the embodiment, the SnO 2 -based homojunction and RRAM device with excellent performance are successfully prepared. These devices have high visible light transmittance, high carrier concentration, excellent photoelectric properties, stability and resistance change characteristics, and are expected to be widely used in the photoelectric field and the semiconductor device field. In addition, the preparation method is simple and feasible, can be compatible with the existing semiconductor technology, and provides possibility for mass production.
Claims (7)
1. The preparation method of the resistance random access memory based on the platinum doped tin oxide is characterized by comprising the following steps of: firstly, preparing an ATO film on a Si substrate as a bottom electrode, then preparing a SnO 2 -based homojunction on the ATO film as a resistive layer, and finally preparing a top Au electrode;
and depositing a layer of SnO 2:Mg film on the SnO 2:Pt film by adopting PLD technology to form a homojunction.
2. The preparation method of the resistive random access memory based on the platinum doped tin oxide according to claim 1, wherein the preparation of the SnO 2:Pt film comprises the following steps:
Step 2.1, pretreatment of a substrate: ultrasonically cleaning a substrate by using a mixed solution of ethanol and acetone, then ultrasonically cleaning again by using deionized water, and finally drying for later use by using nitrogen;
Step 2.2, preparing a precursor liquid: mixing SnCl 2·5H2 O, absolute ethyl alcohol, H 2PtCl6·6H2 O, HCl and polyvinylpyrrolidone to prepare a precursor solution, and storing the precursor solution in a refrigerator for standby;
Step 2.3, preparing a doped SnO 2:Pt film: and preparing a SnO 2:Pt film on the pretreated substrate by adopting an ultrasonic spray pyrolysis method, and carrying out annealing treatment.
3. The method for preparing the resistance random access memory based on the platinum doped tin oxide according to claim 2, wherein in the step 2.2, the weighed 18.562g of SnCl 2·5H2 O and 50ml of absolute ethyl alcohol are added into a beaker, then 21.3ml of 0.02g/ml of H 2PtCl6·6H2 O solution is measured and placed on a magnetic stirrer to be stirred uniformly; to the mixed solution, 0.2ml of 37% HCl and 100mg of polyvinylpyrrolidone were added to promote dispersion of platinum, and after stirring for 6 hours at a constant temperature of 30 ℃ on a magnetic stirrer, the solution was stored in a refrigerator at 4 ℃ for subsequent use.
4. The method for preparing the resistance random access memory based on the platinum doped tin oxide according to claim 2, wherein in the step 2.3, firstly, a pretreated Si substrate is placed on a heating table, then the prepared precursor liquid is taken out for ultrasonic treatment, then the precursor liquid is uniformly sprayed on the substrate through ultrasonic spraying, and meanwhile, pyrolysis treatment is carried out, and the pyrolysis temperature is controlled to be 180 ℃ and the time is controlled to be 30min, so that the SnO 2:Pt film is obtained; and (3) taking out and then placing the steel into a rapid annealing furnace for annealing treatment, wherein the annealing temperature is 900 ℃, the annealing time is 1h, and the annealing atmosphere is Ar.
5. The method for manufacturing a resistive random access memory based on platinum doped tin oxide according to claim 1, wherein the step of depositing a layer of SnO 2 on a layer of SnO 2:pt film comprises the steps of:
step 3.1, blocking a part of SnO 2 by a mask plate;
step 3.2, preparing a doped SnO 2: precursor liquid containing SnCl 2·5H2O、MgCl2·6H2 O, HCl and polyvinylpyrrolidone is prepared firstly, and then a SnO 2:Mg film with a trapezoid structure is prepared on the SnO 2:Pt film through a pulse laser deposition technology.
6. The method for preparing a resistive random access memory based on platinum doped tin oxide according to claim 5, wherein in step 3.2, 18.562g of SnCl 2·5H2 O and 0.1673g of MgCl 2·6H2 O are taken and placed on a magnetic stirrer to be stirred uniformly; then 0.2ml of 37% HCl and 100mg of polyvinylpyrrolidone are added into the mixed solution to promote the solution to disperse and prevent agglomeration, and finally the precursor solution is placed on a magnetic stirrer to be stirred for 6 hours at the constant temperature of 30 ℃, and then the solution is stored in a refrigerator at 4 ℃ for later film deposition.
7. The method for preparing the resistive random access memory based on the platinum doped tin oxide according to claim 1, wherein the method for preparing the ATO film comprises the following steps:
18.562g of SnCl 2·5H2 O and 1.1259g of SbCl 3 are taken and placed on a magnetic stirrer to be uniformly stirred; adding 0.2ml of HCl and 100mg of polyvinylpyrrolidone into the mixed solution to promote solution dispersion and prevent agglomeration, and finally placing the precursor solution on a magnetic stirrer to stir for 6 hours at the constant temperature of 30 ℃, and storing the solution in a refrigerator at 4 ℃ for later film deposition; and then preparing the ATO film by taking single crystal Si as a substrate and PLD technology.
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