CN1197991C - Pre-sputter method for raising rate of utilization of sputter target - Google Patents
Pre-sputter method for raising rate of utilization of sputter target Download PDFInfo
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- CN1197991C CN1197991C CN 02132280 CN02132280A CN1197991C CN 1197991 C CN1197991 C CN 1197991C CN 02132280 CN02132280 CN 02132280 CN 02132280 A CN02132280 A CN 02132280A CN 1197991 C CN1197991 C CN 1197991C
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Abstract
The present invention discloses a pre-sputtering method for increasing the utilization rate of sputtering targets. The pre-sputtering method comprises the steps: first of all a sputtering target is provided; secondly, and then the sputtering target is bombarded by ions, an elongated magnet is driven to scan on the back of the sputtering target backwards and forwards at a constant speed in the bombarding process until the impurities on the surface of the sputtering target are removed, and the pre-sputtering of the sputtering target is finished.
Description
Technical field
The invention relates to a kind of method that is applied to the pre-sputter processing procedure, be meant a kind of pre-sputter method that can improve the sputter target rate of utilization especially.
Background technology
Sputter (SPutter) is a kind of manufacture of semiconductor method that is used for forming deposit metal films, its cardinal principle is that electricity is starched in the reaction chamber of ion feeding sputter machine, in the acceleration of ions mode sputter target (Target) is bombarded again, causing sputter target surface (front) target atom to drop, and form the layer of metal thin film deposition at substrate surface.
See also shown in Figure 1ly, it is to be magnetism controlled wobbly sputter machine in sweep type 10 synoptic diagram; Comprise a reaction chamber 11, a sputter target 20, a pedestal 13 and a microscler magnet 14, wherein reaction chamber 11 is to utilize the vacuum pump (not shown) that its inside is evacuated to 1 to 10mmtorr, and (for example: the argon ion of positively charged) with charged electricity slurry ion feeding reaction chamber 11 inside, 20 of sputter target are made up of a sputter target backboard 12 and a target 16, and sputter target 20 and pedestal 13 are connected with negative electrode and anode more respectively in addition.Sputter machine 10 is by formed potential gradient between sputter target 20 and the pedestal 13, the argon ion of rotating band positive electricity carries out ion bombardment to sputter target 20, make target 16 atoms be deposited on the pedestal 13, and pedestal 13 surfaces are to place the substrate 15 for the treatment of sputter, for example wafer or glass substrate make target 16 atoms can successfully be sputtered on the substrate 15 and form thin film deposition.Microscler magnet 14 is arranged at the back side of sputter target backboard 12, and mobile with the mode of oscillating scanning of carrying out at the back side of sputter target backboard 12 that symmetry comes and goes, and its purpose is to utilize the magnetic control mode to improve sedimentary uniformity coefficient of substrate 15 surface films and speed.
See also shown in Figure 2, its be for the sputter machine when carrying out sputter process, the miles of relative movement of microscler magnet and length velocity relation figure; This one scans method and is called " ladder speed change method ", and its scan speed is to quicken to become 340mm/S for the stepped change mode by 160mm/s to become 350mm/s again, and slowing down afterwards becomes 340mm/s and become 160mm/s again.Wherein microscler magnet is 350mm/s in the scan speed in sputter target part broad in the middle zone, its purpose is to improve the uniformity coefficient of substrate surface thin film deposition, because the resistance value that hypocoxa obtained (RS) film thickness of such speed evenly and quality preferable, but, ladder speed change method scanning because being, the slow speed of two ends fast with the centre, and microscler magnet can produce in coming and going the process that scans and persist effect, therefore tends to cause sputter target corrosion wear rate (erosion rate) the at one end phenomenon fast than region intermediate to produce.
Its operative technique of ladder speed change method that above-mentioned sputter process adopted is normally provided by the sputtering equipment supplier of its upstream, and the manufacturers in general downstream often all is according to its indication operation after receiving the technology that the equipment supplier provides, but substrate all can carry out pre-sputter processing procedure (pre-sputter) earlier usually before really carrying out sputter process, its purpose is to remove the impurity of sputter target surface, these impurity may come from oxidation, yet in the process of pre-sputter, base-plates surface is placed is not for treating the employed substrate of sputter product, specializes in that test board (dummysubstrate) that pre-sputter uses replaces but change with a kind of.
But because the operating method (scan speed) of microscler magnet in the pre-sputter processing procedure, the equipment supplier advises that the user adopts and sputter process identical operations mode, i.e. " ladder speed change method ", if but in the pre-sputter processing procedure, still sputter target is adopted ladder speed change method, then sputter target surface will be slower in the scan speed that scans path two ends because of microscler magnet, and microscler magnet is scanning the effect that persists that is produced when path two ends are turned back, and cause sputter target identical Corrosion results when its surperficial two ends produce with sputter, promptly the corrosion wear rate of two ends (erosion rate) is fast than region intermediate, make sputter target when pre-sputter, its integral surface can't obtain corrosion consumption uniformly.
See also shown in Figure 3, sputter target 20 is in the process of pre-sputter, if the Impurity removal that region intermediate will be surperficial with it must corrode the target 16 that consumes thickness d, then its two end is will be because of scan speed slow and can suspend at the end of turning back, so increased thickness d than region intermediate more ' corrosion consumption.Afterwards if carry out sputter with 20 pairs of substrates of this sputter target again, and microscler magnet also scans with the same speed (ladder speed change method) that scans, and its result will make the corrosion of sputter target 20 2 ends consume to make sputter target 20 quicken to scrap quickly near sputter target backboard 12.This its rate of utilization for most sputter target 20 can be described as not very too high, because sputter target 20 has the outspent phenomenon except the target 16 of two ends, target 16 consumptions of its most of region intermediate are also calculated too many, still can continue again to use for some time, only, scraps the target of two ends 16 because consuming must face near sputter target backboard 12, this will form serious waste for the sputter cost of manufacturers, in addition, frequent replacing sputter target 20 also can be wasted the time and the human cost of maintenance.
Summary of the invention
Main purpose of the present invention is to provide a kind of pre-sputter method that improves the sputter target rate of utilization, it can make target corrosion uniformly in the process of pre-sputter of sputter target consume, and reduces the rate of utilization of sputter target because of the excessive corrosion consumption of specific region to avoid sputter target.
The step of pre-sputter method of the present invention comprises: a sputter target at first is provided, again sputter target is carried out ion bombardment, in the process of bombardment and drive a microscler magnet in the constant speed mode and scan back and forth in the back side of sputter target, after the Impurity removal of sputter target surface, finish the pre-sputter of sputter target backboard.Sputter utilize a vacuum pump with its internal control in 1 to 10mmtorr pressure range.Above-mentioned pre-sputter processing procedure is to carry out in the inside of sputter, the scan speed of microscler magnet is preferable to be controlled at 140mm/s to 200mm/s scope, and it is better with 160mm/s, this speed is the initial scan speed of ladder speed change method, again in the processing procedure of pre-sputter, being placed on the pedestal top is the test board (dummy substrate) for glass material in order to the sputter thing for the treatment of of deposit film.
Because the present invention is in the processing procedure of pre-sputter, be to control microscler magnet in the constant speed mode to scan back and forth in the back side of sputter target, it will be comparatively even that its corrosion in sputter target surface consumes, and can not produce the situation that has excessive corrosion to consume at the part zone of sputter target surface target as known techniques, therefore can improve the end-use performance of sputter target; Again because scan speed of the present invention is slow than known techniques, the impurity thickness that microscler magnet is removed in the process that at every turn scans is more, therefore the number of times that contact is turned back in the time of can reducing microscler magnet and scan, and number of times one minimizing that contact is turned back, the total electrodeposition power that pre-sputter is required and the usage quantity of target also relatively reduce, the usage quantity of while test board and the time that maintenance is answered a pager's call also just relatively reduce, and material cost that pre-sputter is required and man-hour also just relatively reduce.
Description of drawings
Fig. 1 is the synoptic diagram of magnetism controlled wobbly sputter machine in sweep type;
Fig. 2 for the sputter machine when carrying out sputter process, the miles of relative movement of microscler magnet and length velocity relation figure;
When Fig. 3 utilizes ladder speed change method that sputter target is carried out pre-sputter for known techniques, consume synoptic diagram in the corrosion that its surface produced;
Fig. 4 is the pre-sputter method flow diagram of raising sputter target rate of utilization of the present invention;
When Fig. 5 carries out pre-sputter for utilizing method of the present invention, the miles of relative movement of microscler magnet and length velocity relation figure;
When Fig. 6 carries out pre-sputter for the even method of constant speed of the present invention to sputter target, consume synoptic diagram in the corrosion that its surface produced;
Fig. 7 is for utilizing the present invention and known techniques to carry out the comparative analysis figure of pre-sputter respectively.
The figure number explanation:
10-sputter machine, 11-reaction chamber, 12-sputter target backboard, 13-pedestal, the microscler magnet of 14-, 15-substrate, 16-target, 20-sputter target, 26-target, 28-sputter target backboard, 30-sputter target.
Embodiment
The present invention is a kind of about improving the pre-sputter method of sputter target rate of utilization, this pre-sputter method can improve the end-use performance of sputter target, reduce the electrodeposition power of pre-sputter and the usage quantity of target, and reducing the usage quantity of test board and the man-hour that maintenance is answered a pager's call, its specific embodiment and related embodiment will be done explanation by following content.
See also shown in Figure 4ly, it is the pre-sputter method flow diagram for raising sputter target rate of utilization of the present invention; Step 41 a: at first sputter target is positioned over sputter inside, again electricity is starched ion and fed reaction chamber inside, step 42: utilize formed potential gradient between sputter target and the pedestal, drive electricity slurry ion pair sputter target and carry out ion bombardment, step 43: in the process of bombardment and drive a microscler magnet in the constant speed mode and scan back and forth in the back side of sputter target, step 44: after the Impurity removal of sputter target surface, and finish the pre-sputter of sputter target.
In the present embodiment, be to utilize the SMD-650C type sputter machine of Japanese vacuum (ULVAC) manufacturing to carry out above-mentioned pre-sputter, above-mentioned sputter pressure inside is to be controlled between 1 to 10mmtorr, the scan speed of microscler magnet is then preferable to be controlled at 140mm/s to 200mm/s scope, and it is better with the scan speed of 160mm/s, this speed is the initial scan speed of ladder speed change method, and Fig. 5 is the graph of a relation of the miles of relative movement and the scan speed of microscler magnet.As mentioned above, though the present invention is to use the SMD-650C type sputter machine of Japanese vacuum (ULVAC) manufacturing to carry out pre-sputter, right its is not in order to limit the present invention, also can use the sputter machine of other any factory plate models, and utilize the method for the invention described above, corresponding indivedual types are done suitable scan speed adjustment in the scope of 140mm/s to 200mm/s, can reach effect of the present invention equally.Again in the processing procedure of pre-sputter, being placed on the pedestal top is the test board (dummy substrate) for glass material in order to the sputter thing for the treatment of of deposit film.
This must lay special stress on explanation be, the present invention mentions microscler magnet in step 43 scan speed is necessary for the purpose of constant speed, mainly be to solve known techniques in ladder speed change method, because fast in the middle of the scan speed of microscler magnet, two ends are slow, and cause sputter target in its two ends generation erosion rate shortcoming faster.Though the scan speed of mentioning microscler magnet in the article in the last period is necessary for constant speed again, but the scan speed that is adopted is preferable with the 160mm/s in the middle of the ladder speed change method, its main usefulness is intended to solve microscler magnet and produces in scanning the process of turning back and persist effect, persisting effect can produce add and take advantage of effect the erosion rate of sputter target two ends, make sputter target quicken to scrap, therefore if adopting the central 160mm/s of ladder speed change method to carry out constant speed, the present invention scans, then not only can reduce microscler magnet produces in exhumation process and persists effect, more because the speed that is adopted is that ladder scans the original speed that scans in the method, more can guarantee under such scan speed, the adjustment of machinery equipment parameter and the setting of operating environment all can not cause bad influence to product by testing definite.
See also shown in Figure 6ly, it is for utilizing method of the present invention to carry out pre-sputter, and the corrosion of sputter target surface consumes figure.Sputter target 30 is made up of a sputter target backboard 28 and a target 26 among the figure, the present invention is controlled at microscler magnet under the scope of 140mm/s to 200mm/s in the constant speed mode, and be preferable scan speed with 160mm/s, compare as can be known with Fig. 3, the target erosion consumption on degree of spattering target of the present invention surface is more even than Fig. 3.If will the target of sputter target surface be removed the thickness of d and adopt ladder speed change method in the process of pre-sputter, its result will be as shown in Figure 3, though the target of the region intermediate of sputter target can successfully be removed the thickness of d at this moment, but it is also will be relatively slow and persist the influence of effect and removed the thickness of d ten d ' because of scan speed at the target of its two side, wherein d ' target thickness of removing are to be the shortcoming of known techniques in pre-sputter process maximum more, also are the emphasis places that the institute of the present invention utmost point is desired to overcome.Otherwise, if scan method sputter target is carried out pre-sputter with constant speed of the present invention, and adopt scan speed as suggested in the present invention to scan, its result will be as shown in Figure 6, the target thickness d that this moment, sputter target integral body was removed does not comparatively evenly have excessive corrosive phenomenon, therefore the present invention can reduce sputter target and additionally produces thickness d in its two side ' target consumption, and then the rate of utilization and the life-span of improving sputter target.
As shown in the above description, the present invention not only can reduce the time of sputter target pre-sputter, the corrosion consumption of target in the time of more can reducing pre-sputter, because the sputter machine is in the process of pre-sputter, the electrodeposition power that time per unit is exported is all identical, and the present invention be because can reduce time of pre-sputter, and therefore total electrodeposition power of integral body also just relatively reduces when pre-sputter; In addition, if the deposition book film on test board surface is when surpassing its permissible theoretical safe thickness, then this test board must be scrapped, again because sputter target of the present invention corrosion consumption of target when pre-sputter is less, sedimentary film thickness is less in test board surface institute, with the permissible theoretical safe thickness of more difficult arrival, so the present invention can reduce the usage quantity of test board compared to known techniques.
See also shown in Figure 7, it is the comparative analysis figure that spatters the town for the present invention and known techniques respectively in advance, by among the figure as can be known, known techniques will be finished the pre-sputter of a sputter target, must the cost five hours 54 minutes 34 seconds, the test board that it consumed is five batches, 89 kilowatt-hours of total electrodeposition power, the present invention then spends five hours nine minutes, and its used up test board is four batches, total electrodeposition power is 71 kilowatt-hours, and wherein each batch comprises 24 built-in testing substrates.Generally speaking, the present invention all saves more than 20% than known techniques in the consumption of the usage quantity of test board, electrodeposition power and the cost of pre-sputter time, therefore not only can reduce cost, and more can improve the rate of utilization of sputter target.
What deserves to be mentioned is, the present invention is not limited to the scope of 140mm/s to 200mm/s for the scan speed that microscler magnet adopted in the pre-sputter process, as long as meet the principle that constant speed scans, just can produce corrosion uniformly on the surface of sputter target consumes, do not consume and can not produce the over-drastic corrosion at two ends of sputter target as known techniques, but the scan speed of microscler magnet is low more, the corrosion consumption of its sputter target that causes can be many more, yet can reduce microscler magnet to this and scan round number of times, and the present invention adopts the scan speed of 160mm/s in process of the test, mainly be because this speed is that ladder scans the original speed that scans in the method, past is under such scan speed, no matter be the adjustment of machinery equipment parameter and the setting of operating environment, all can not cause bad influence to product by testing definite, therefore scan speed scope of the present invention is preferable to 200mm/s with 140mm/s, and it is better with the scan speed of 160mm/s, certainly, the present invention does not limit with this speed and scans, and can cooperate the required and test adjustment of actual state.
The above only is the preferred embodiment of the pre-sputter method of raising sputter target rate of utilization of the present invention; it is not in order to limit practical range of the present invention; anyly have the knack of this skill person and all should belong to scope of the present invention, so protection scope of the present invention is when enclosing as foundation with claim in the modification of making without prejudice to spirit of the present invention.
Claims (4)
1. a pre-sputter method that improves the sputter target rate of utilization is applicable to a sputter, it is characterized in that comprising step:
One sputter target is provided;
Above-mentioned sputter target is carried out ion bombardment;
Driving a microscler magnet in the constant speed mode scans back and forth in the back side of above-mentioned sputter target; And
After the Impurity removal of above-mentioned sputter target surface, finish the pre-sputter of this sputter target.
2. the pre-sputter method of raising sputter target rate of utilization as claimed in claim 1 is characterized in that: sputter utilize a vacuum pump with its internal control in 1 to 10mmtorr pressure range.
3. the pre-sputter method of raising sputter target rate of utilization as claimed in claim 1 is characterized in that: the scan speed of described microscler magnet is 140mm/s to 200mm/s.
4. the pre-sputter method of raising sputter target rate of utilization as claimed in claim 1 is characterized in that: the scan speed of described microscler magnet is 160mm/s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 02132280 CN1197991C (en) | 2002-09-04 | 2002-09-04 | Pre-sputter method for raising rate of utilization of sputter target |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 02132280 CN1197991C (en) | 2002-09-04 | 2002-09-04 | Pre-sputter method for raising rate of utilization of sputter target |
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| CN1480555A CN1480555A (en) | 2004-03-10 |
| CN1197991C true CN1197991C (en) | 2005-04-20 |
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| CN 02132280 Expired - Fee Related CN1197991C (en) | 2002-09-04 | 2002-09-04 | Pre-sputter method for raising rate of utilization of sputter target |
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