CN117626210A - Preparation method of corrosion-resistant coating for electronic components in marine environment - Google Patents
Preparation method of corrosion-resistant coating for electronic components in marine environment Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
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- 238000000034 method Methods 0.000 claims abstract description 38
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Abstract
The invention relates to the field of coating preparation, and discloses a preparation method of an electronic component corrosion-resistant coating in a marine environment, which comprises the following steps: s1: ion implantation mixed layer: the method is characterized in that an ion implantation technology is adopted to prepare a component surface bonding layer, an implanted element is Cu, ni, cr, ag metal element, a layer of uniform and strong-bonding-force mixed layer is formed on the surface of an electronic component by adopting ion implantation Cu, ni, cr, ag metal element, and a dense film is formed on a substrate by adopting a high-power pulse magnetron sputtering technology, so that the bonding strength and compactness of a coating can be greatly improved.
Description
Technical Field
The invention relates to the field of coating preparation, in particular to a preparation method of an electronic component corrosion-resistant coating in a marine environment.
Background
The corrosion-resistant coating for the electronic components in the marine environment is a coating specially designed for protecting the electronic components from corrosion in the marine environment. The coating generally has the characteristics of salt fog resistance, moisture resistance, ultraviolet resistance, chemical substance resistance and the like, and can effectively prolong the service life of electronic components and keep the performance stable.
In the application number 201510875353.0, the disclosed corrosion-resistant coating material composition and a preparation method of a corrosion-resistant coating solve the problems that the existing coating can only play a role in water resistance and the like and cannot resist corrosive substances existing in the environment, but the existing main coating preparation technology mainly adopts methods of paint spraying, coating, nickel plating and the like, the protection effect of the methods is limited, or the requirements of high conductivity and corrosion resistance of electronic components are difficult to meet, in practice, some coatings can adopt two methods of chemical vapor deposition and physical vapor deposition to prepare the corrosion-resistant coating, however, the chemical vapor deposition technology is generally accompanied with the problems that high temperature can affect the overall performance of the material, environmental protection and the like, and the technologies such as magnetron sputtering, multi-arc ion plating and the like are common in the physical vapor deposition, but the magnetron sputtering has low ionization rate and low energy, and the obtained coating has weak bonding force; the multi-arc ion plating has high deposition temperature and large particles in the film forming process, and can seriously influence the quality of electronic components.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a preparation method of an electronic component corrosion-resistant coating in a marine environment, and solves the problems that the current corrosion-resistant coating is difficult to meet the high conductivity of the electronic component in the marine environment and has corrosion resistance.
In order to achieve the above purpose, the invention is realized by the following technical scheme: a preparation method of an electronic component corrosion-resistant coating in a marine environment comprises the following steps:
s1: ion implantation mixed layer: adopting ion implantation technology to prepare a component surface bonding layer, wherein the implanted element is Cu, ni, cr, ag metal element, the ions have higher energy, can penetrate through an atomic layer on the component surface and interact with component matrix atoms to form stronger chemical bonding, so that a uniform mixed layer is formed below the component surface, the implanted voltage is 3kV-10kV, the arc current is 40A-90A, the beam current is 3-8mA, and the component surface forms a uniform mixed layer with strong bonding force;
s2: high power magnetron sputtering layer: the high-power pulse magnetron sputtering technology is adopted to perform surface sputtering bombardment, the selected target material is a Cu target, and a large number of sputtering particles can be generated by the Cu target material under the action of high-voltage pulse discharge, the particles have higher energy, a compact film can be formed on a substrate, ar gas flow is 80-200sccm, power is 3-5kW, frequency is 50-300Hz, negative bias is 800V, 600V and 400V for 30s, so that the sputtering process is more uniform and better in effect;
s3: high-power magnetic control is equipped with conductive layer: depositing a surface conductive layer by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 80-200sccm, power is 3-5kW, frequency is 50-300Hz, negative bias is 50V, deposition thickness is 1-5 mu m, and a layer of coating with good conductive performance is formed on the basis of a component surface mixed layer;
s4: high-power magnetic control deposition anti-corrosion conductive layer: the method is characterized in that a high-power pulse magnetron sputtering technology is adopted to deposit an anti-corrosion layer, a splicing mode is adopted to prepare a high-entropy target, a plurality of metal elements or alloys thereof can be combined together in the splicing mode, the elements have complementary effects on anti-corrosion performance, the overall performance of the anti-corrosion layer can be improved, the interaction between the elements can weaken the bad performance of a single element, meanwhile, the overall performance is improved, the width dimension of each metal strip is 2cm, the splicing metal is Cu, ti, al, V, ag, cr, ni metal elements or any 3-5 kinds of alloys thereof, the rotation speed of the target is 5-10rad/min, the Ar gas flow is 100-500sccm, the power is 3-5kW, the frequency is 50-300Hz, the negative bias voltage is 50V, and the deposition thickness is 20-100nm.
Preferably, in the step S1, firstly, the surface of the component is pretreated, including cleaning, degreasing and polishing, to remove dirt and oxide on the surface and improve the roughness of the surface, which is favorable for the ion implantation process, then a mixed layer is formed on the surface of the component by adopting an ion implantation technology, the selection of the implanted elements includes Cu, ni, cr, ag metal elements, the ion implantation voltage is controlled within the range of 3kV-10kV during the implantation process to ensure that the energy and depth of the implanted elements are suitable, the arc flow is controlled within the range of 40A-90A to ensure the stability and uniformity during the implantation process, and the beam flow control is controlled within the range of 3-8mA to realize the precise control of the quantity and concentration of the implanted elements.
Preferably, in the step S1, in the ion implantation process, the implantation angle, implantation rate, and ion energy parameters may be adjusted to achieve uniform distribution of the implanted elements and optimize the performance of the coating, and finally, the surface of the implanted component is cleaned and dried to remove the residual ion implantation material and moisture, and the preparation of the coating in the next step is prepared.
Preferably, in the step S2, the pretreated component is placed in a high-power magnetron sputtering device and is subjected to sputtering bombardment, and the selected target material is a Cu target, because copper has good conductivity and corrosion resistance and is suitable as a material of a coating, in the sputtering process, the flow rate of Ar gas is controlled within the range of 80-200sccm to ensure the stability and uniformity of the sputtering atmosphere, and meanwhile, the sputtering power is adjusted within the range of 3-5kW to realize uniform deposition and good adhesion of the coating.
Preferably, in the step S2, in the sputtering process, the uniformity, compactness and performance of the coating can be optimized by precisely controlling the sputtering parameters, such as the sputtering rate, the sputtering time and the gas flow, and finally, the surface of the sputtered component is cleaned and dried to remove the residual sputtering substances and moisture.
Preferably, in the step S3, the high-power pulse magnetron sputtering technology specifically includes a high-power pulse magnetron sputtering device, a target material (Cu target), a gas flow controller, a power supply, and a vacuum pump.
Preferably, in the step S3, pre-sputtering is performed before the main sputtering to remove dirt and oxide on the target surface and to make the target surface reach a stable state.
Preferably, in the step S3, the component processed in the step S2 is placed in a high-power magnetron sputtering device, a conductive layer is prepared for deposition, then the Ar gas flow is adjusted within the range of 80-200sccm to ensure the stability and uniformity of the sputtering atmosphere, meanwhile, the sputtering power is set within the range of 3-5kW to realize uniform deposition and good adhesion of the coating, the frequency is controlled within 50-300Hz to adjust the sputtering rate and uniformity of the coating, and the negative bias voltage is set at 50V to realize precise thickness control and optimized performance of the coating.
Preferably, in the step S4, the specific steps for preparing the anti-corrosion conductive layer by using the high-power pulse magnetron sputtering technology are as follows:
preparing experimental equipment: the device comprises a high-power pulse magnetron sputtering device, a target (spliced high-entropy target), a gas flow controller, a power supply and a vacuum pump;
determining experimental parameters: according to experimental requirements, setting Ar gas flow to be 100-500sccm, power to be 3-5kW, frequency to be 50-300Hz, negative bias to be 50V, and deposition thickness to be 20-100nm;
setting up an experiment vacuum system: installing a target in a sputtering chamber of a high-power pulse magnetron sputtering device, connecting a gas flow controller, a power supply and vacuum pump equipment, and checking air tightness;
vacuumizing: starting a vacuum pump to reduce the air pressure in the sputtering chamber to a proper working vacuum (typically 10-3 Pa);
pre-sputtering: before formal sputtering, pre-sputtering is carried out to remove dirt and oxide on the surface of the target material and enable the surface of the target material to reach a stable state;
and (3) formal sputtering: turning on a high-power pulse magnetron sputtering device, and performing sputter deposition according to set parameters to prepare an anti-corrosion conductive layer;
monitoring during deposition: the plasma state, the deposition rate and the film thickness parameters in the sputtering process are observed in real time, and experimental parameters can be properly adjusted if necessary;
and (3) deposition completion: after reaching the preset deposition thickness, closing the high-power pulse magnetron sputtering device, and stopping sputtering;
taking out the sample: after the air pressure in the sputtering chamber is restored to the atmospheric pressure, taking out the prepared anti-corrosion conducting layer sample;
post-treatment: if the corrosion-resistant conductive layer is required to be subjected to performance test or further treatment, corresponding post-treatment operation can be performed.
Preferably, in the step S4, the film-base binding force result is detected by preparing an anti-corrosion coating on the surface of the silicon wafer, exposing the prepared anti-corrosion coating sample to a corrosive environment, such as brine, acid-base solution.
Advantageous effects
The invention provides a preparation method of an electronic component corrosion-resistant coating in a marine environment. Compared with the prior art, the method has the following beneficial effects:
according to the invention, a uniform and strong-binding-force mixed layer is formed on the surface of an electronic component by adopting ion implantation Cu, ni, cr, ag metal elements, and a dense film is formed on a substrate by adopting a high-power pulse magnetron sputtering technology, so that the binding strength and compactness of the coating can be greatly improved, on the basis, the anti-corrosion layer deposition is carried out by adopting a high-power magnetic control prepared conductive layer and a high-power pulse magnetron sputtering technology, so that a coating with good conductivity is formed on the surface of the mixed layer of the component, multiple metal elements or alloys thereof can be combined together in a splicing manner, the elements have complementary effects on the anti-corrosion performance, the overall performance of the anti-corrosion layer can be improved, the interaction among the elements can weaken the bad performance of a single element, and the overall performance can be improved, therefore, the electronic component can meet the requirements of high-conductivity and compatible performance in a marine environment, the multi-element multi-scale regulation and control of the multi-element can be realized, the coating prepared by the method has high binding force and good conductivity, the anti-corrosion performance, and the anti-corrosion performance of the coating prepared by the method has strong binding force and the anti-corrosion performance, and the anti-corrosion resistance performance and the anti-corrosion performance of the film forming particles of the electronic component can not be influenced by the high-arc deposition quality and the particles.
Drawings
Fig. 1 is a flow chart of a method for preparing an anti-corrosion coating for electronic components in a marine environment.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, the present invention provides the following technical solutions, which specifically include the following embodiments:
example 1
A preparation method of an electronic component corrosion-resistant coating in a marine environment comprises the following steps:
s1: preparing a component surface bonding layer by adopting an ion implantation technology, wherein the implantation element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA;
s2: the surface sputtering bombardment is carried out by adopting a high-power pulse magnetron sputtering technology, the selected target material is a Cu target, the Ar gas flow is 150sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is respectively sputtered for 30s at 800V, 600V and 400V;
s3: depositing a surface conducting layer by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 150sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 3 mu m;
s4: the high-power pulse magnetron sputtering technology is adopted to deposit an anti-corrosion layer, the high-entropy target material is prepared in a splicing mode, the width dimension of each metal strip is 2cm, splicing metal is Cu, ti, al, V, ag metal elements, the rotation speed of the target material is 5rad/min, ar gas flow is 300sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 50nm.
Example two
A preparation method of an electronic component corrosion-resistant coating in a marine environment comprises the following steps:
s1: preparing a component surface bonding layer by adopting an ion implantation technology, wherein the implantation element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA;
s2: the surface sputtering bombardment is carried out by adopting a high-power pulse magnetron sputtering technology, the selected target material is a Cu target, the Ar gas flow is 150sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is respectively sputtered for 30s at 800V, 600V and 400V;
s3: depositing a surface conducting layer by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 150sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 3 mu m;
s4: the anti-corrosion layer deposition is carried out by adopting a high-power pulse magnetron sputtering technology, the high-entropy target material is prepared by adopting a splicing handle mode, the width dimension of each metal strip is 2cm, the splicing metal is Cu, cr and Al metal elements, the rotation speed of the target material is 5rad/min, the Ar gas flow is 300sccm, the power is 4kW, the frequency is 200Hz, the negative bias voltage is 50V, and the deposition thickness is 50nm.
Example III
A preparation method of an electronic component corrosion-resistant coating in a marine environment comprises the following steps:
s1: preparing a component surface bonding layer by adopting an ion implantation technology, wherein the implantation element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA;
s2: the surface sputtering bombardment is carried out by adopting a high-power pulse magnetron sputtering technology, the selected target material is a Cu target, the Ar gas flow is 150sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is respectively sputtered for 30s at 800V, 600V and 400V;
s3: depositing a surface conducting layer by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 150sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 3 mu m;
s4: the high-power pulse magnetron sputtering technology is adopted to deposit an anti-corrosion layer, the high-entropy target material is prepared in a splicing mode, the width dimension of each metal strip is 2cm, splicing metal is Cu, cr, al, V, ag metal elements, the rotation speed of the target material is 5rad/min, ar gas flow is 300sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 30nm.
Comparative example one
S1: the method is free;
s2: the surface sputtering bombardment is carried out by adopting a high-power pulse magnetron sputtering technology, the selected target material is a Cu target, the Ar gas flow is 150sccm, the power is 4kW, the frequency is 200Hz, and the negative bias voltage is respectively sputtered for 30s at 800V, 600V and 400V;
s3: depositing a surface conducting layer by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 150sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 3 mu m;
s4: the high-power pulse magnetron sputtering technology is adopted to deposit an anti-corrosion layer, the high-entropy target material is prepared in a splicing mode, the width dimension of each metal strip is 2cm, splicing metal is Cu, cr, al, V, ag metal elements, the rotation speed of the target material is 5rad/min, ar gas flow is 300sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 30nm.
Comparative example two
S1: preparing a component surface bonding layer by adopting an ion implantation technology, wherein the implantation element is Ni metal element, the implantation voltage is 5kV, the arc current is 70A, and the beam current is 5mA;
s2, performing surface sputtering bombardment by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 150sccm, power is 4kW, frequency is 200Hz, and negative bias voltage is respectively sputtered for 30S at 800V, 600V and 400V;
s3: depositing a surface conducting layer by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 150sccm, power is 4kW, frequency is 200Hz, negative bias voltage is 50V, and deposition thickness is 3 mu m;
s4: and no.
The following are the film-based bonding force results for the Si sheets in the examples and comparative examples:
| sequence number | Example 1 | Example two | Example III | Comparative example one | Comparative example two |
| Binding force N/mm | 0.91 | 0.78 | 0.82 | 0.39 | 0.89 |
| Surface resistance mΩ | 25 | 36 | 26 | 26 | 20 |
The percentage of corrosion area under the same area condition in a salt spray test at 35 ℃ for 24 hours is as follows:
| sequence number | Example 1 | Example two | Example III | Comparative example one | Comparative example two |
| Percentage of corrosion area | 35 | 30 | 18 | Shedding off | 94 |
From the above experimental data, it can be known that: the bonding strength and compactness of the coating can be greatly improved by adopting ion implantation and high-power pulse magnetron sputtering technology, the defects are few, the roughness is low, the multielement target material spliced can realize multielement proportional control of elements, and the coating has higher corrosion resistance and good conductivity.
Claims (10)
1. A preparation method of an electronic component corrosion-resistant coating in a marine environment is characterized by comprising the following steps: the method comprises the following steps:
s1: ion implantation mixed layer: adopting ion implantation technology to prepare a component surface bonding layer, wherein the implanted element is Cu, ni, cr, ag metal element, the ions have higher energy, can penetrate through an atomic layer on the component surface and interact with component matrix atoms to form stronger chemical bonding, so that a uniform mixed layer is formed below the component surface, the implanted voltage is 3kV-10kV, the arc current is 40A-90A, the beam current is 3-8mA, and the component surface forms a uniform mixed layer with strong bonding force;
s2: high power magnetron sputtering layer: the high-power pulse magnetron sputtering technology is adopted to perform surface sputtering bombardment, the selected target material is a Cu target, and a large number of sputtering particles can be generated by the Cu target material under the action of high-voltage pulse discharge, the particles have higher energy, a compact film can be formed on a substrate, ar gas flow is 80-200sccm, power is 3-5kW, frequency is 50-300Hz, negative bias is 800V, 600V and 400V for 30s, so that the sputtering process is more uniform and better in effect;
s3: high-power magnetic control is equipped with conductive layer: depositing a surface conductive layer by adopting a high-power pulse magnetron sputtering technology, wherein the selected target material is a Cu target, ar gas flow is 80-200sccm, power is 3-5kW, frequency is 50-300Hz, negative bias is 50V, deposition thickness is 1-5 mu m, and a layer of coating with good conductive performance is formed on the basis of a component surface mixed layer;
s4: high-power magnetic control deposition anti-corrosion conductive layer: the method is characterized in that a high-power pulse magnetron sputtering technology is adopted to deposit an anti-corrosion layer, a splicing mode is adopted to prepare a high-entropy target, a plurality of metal elements or alloys thereof can be combined together in the splicing mode, the elements have complementary effects on anti-corrosion performance, the overall performance of the anti-corrosion layer can be improved, the interaction between the elements can weaken the bad performance of a single element, meanwhile, the overall performance is improved, the width dimension of each metal strip is 2cm, the splicing metal is Cu, ti, al, V, ag, cr, ni metal elements or any 3-5 kinds of alloys thereof, the rotation speed of the target is 5-10rad/min, the Ar gas flow is 100-500sccm, the power is 3-5kW, the frequency is 50-300Hz, the negative bias voltage is 50V, and the deposition thickness is 20-100nm.
2. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S1, firstly, the surface of the component is pretreated, including cleaning, degreasing and polishing, to remove dirt and oxide on the surface and improve the surface roughness, which is beneficial to the ion implantation process, then a mixed layer is formed on the surface of the component by adopting ion implantation technology, the selection of implanted elements comprises Cu, ni, cr, ag metal elements, the ion implantation voltage is controlled within the range of 3kV-10kV during the implantation process, so as to ensure that the energy and depth of the implanted elements are suitable, the arc flow is controlled within the range of 40A-90A, so as to ensure the stability and uniformity during the implantation process, and the beam flow is controlled within the range of 3-8mA, so as to realize the precise control of the quantity and concentration of the implanted elements.
3. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S1, in the ion implantation process, the implantation angle, implantation rate, and ion energy parameters may be adjusted to achieve uniform distribution of the implanted elements and optimize the performance of the coating, and finally, the surface of the implanted component is cleaned and dried to remove the residual ion implantation material and moisture, and the preparation of the coating in the next step is prepared.
4. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S2, the pretreated component is placed in a high-power magnetron sputtering device, and sputtering bombardment is performed, and the selected target material is a Cu target, because copper has good conductivity and corrosion resistance, and is suitable as a material of a coating, in the sputtering process, the Ar gas flow is controlled within the range of 80-200sccm to ensure the stability and uniformity of the sputtering atmosphere, and meanwhile, the sputtering power is adjusted within the range of 3-5kW to realize uniform deposition and good adhesion of the coating.
5. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S2, in the sputtering process, the uniformity, compactness and performance of the coating can be optimized by precisely controlling the sputtering parameters, such as the sputtering rate, the sputtering time and the gas flow, and finally, the surface of the sputtered component is cleaned and dried to remove the residual sputtering substances and moisture.
6. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S3, the high-power pulse magnetron sputtering technology specifically includes a high-power pulse magnetron sputtering device, a target material (Cu target), a gas flow controller, a power supply, and a vacuum pump.
7. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S3, pre-sputtering is performed before the main sputtering to remove dirt and oxide on the target surface and to make the target surface reach a stable state.
8. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S3, the components processed in the step S2 are placed in a high-power magnetron sputtering device, a conductive layer is prepared for deposition, then Ar gas flow is regulated within a range of 80-200sccm to ensure stability and uniformity of sputtering atmosphere, meanwhile, sputtering power is set within a range of 3-5kW to realize uniform deposition and good adhesion of a coating, frequency is controlled within 50-300Hz to regulate sputtering rate and uniformity of the coating, and negative bias voltage is set to be 50V to realize accurate thickness control and optimal performance of the coating.
9. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S4, the specific steps for preparing the anti-corrosion conductive layer by adopting the high-power pulse magnetron sputtering technology are as follows:
preparing experimental equipment: the device comprises a high-power pulse magnetron sputtering device, a target (spliced high-entropy target), a gas flow controller, a power supply and a vacuum pump;
determining experimental parameters: according to experimental requirements, setting Ar gas flow to be 100-500sccm, power to be 3-5kW, frequency to be 50-300Hz, negative bias to be 50V, and deposition thickness to be 20-100nm;
setting up an experiment vacuum system: installing a target in a sputtering chamber of a high-power pulse magnetron sputtering device, connecting a gas flow controller, a power supply and vacuum pump equipment, and checking air tightness;
vacuumizing: starting a vacuum pump to reduce the air pressure in the sputtering chamber to a proper working vacuum (typically 10-3 Pa);
pre-sputtering: before formal sputtering, pre-sputtering is carried out to remove dirt and oxide on the surface of the target material and enable the surface of the target material to reach a stable state;
and (3) formal sputtering: turning on a high-power pulse magnetron sputtering device, and performing sputter deposition according to set parameters to prepare an anti-corrosion conductive layer;
monitoring during deposition: the plasma state, the deposition rate and the film thickness parameters in the sputtering process are observed in real time, and experimental parameters can be properly adjusted if necessary;
and (3) deposition completion: after reaching the preset deposition thickness, closing the high-power pulse magnetron sputtering device, and stopping sputtering;
taking out the sample: after the air pressure in the sputtering chamber is restored to the atmospheric pressure, taking out the prepared anti-corrosion conducting layer sample;
post-treatment: if the corrosion-resistant conductive layer is required to be subjected to performance test or further treatment, corresponding post-treatment operation can be performed.
10. The method for preparing the corrosion-resistant coating for the electronic components in the marine environment according to claim 1, which is characterized in that: in the step S4, the prepared anti-corrosion coating sample is exposed to a corrosion environment, such as saline solution and acid-base solution, through preparing the anti-corrosion coating on the surface of the silicon wafer, and the film base binding force result is detected.
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