CN116264247A - 半导体装置 - Google Patents

半导体装置 Download PDF

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CN116264247A
CN116264247A CN202211581116.XA CN202211581116A CN116264247A CN 116264247 A CN116264247 A CN 116264247A CN 202211581116 A CN202211581116 A CN 202211581116A CN 116264247 A CN116264247 A CN 116264247A
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electrode
passivation film
semiconductor device
copper
copper electrode
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田中香次
小西和也
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Mitsubishi Electric Corp
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Abstract

使具有以铜为主要成分的电极和由有机树脂构成的保护膜的半导体装置的可靠性提高。半导体装置具有：金属电极即发射极电极(14)，其形成于半导体基板(30)之上；第1钝化膜(20)，其由有机树脂之外的材料构成，将发射极电极(14)的一部分覆盖；以及第2钝化膜(21)，其由有机树脂构成，隔着第1钝化膜(20)将发射极电极(14)的一部分覆盖。在发射极电极(14)之上，形成有与发射极电极(14)的没有被第1钝化膜(20)覆盖的部分连接的以铜为主要成分的铜电极(22)。第2钝化膜(21)与铜电极(22)分离。

Description

半导体装置
技术领域
本发明涉及半导体装置。
背景技术
为了实现电极的低电阻化、散热性的提高、针对热应力的可靠性提高，已知在半导体芯片之上设置有以铜(Cu)为主要成分的电极和由有机树脂构成的保护膜这一构造的半导体装置(例如，下述专利文献1)。
专利文献1：日本特开2006-86378号公报
由有机树脂构成的保护膜大多是为了确保半导体芯片的耐湿性、静电耐量所不可缺少的部件。就专利文献1的半导体装置而言，呈以铜为主要成分的电极和由有机树脂构成的保护膜接触的构造，在半导体装置进行高温动作时电极的铜扩散至保护膜的有机树脂而在保护膜形成变质层，由此，担心半导体装置的可靠性降低。
发明内容
本发明就是为了解决上述课题而提出的，其目的在于使具有以铜为主要成分的电极和由有机树脂构成的保护膜的半导体装置的可靠性提高。
本发明涉及的半导体装置具有：金属电极，其形成于半导体基板之上；第1钝化膜，其由有机树脂之外的材料构成，将所述金属电极的一部分覆盖；第2钝化膜，其由有机树脂构成，隔着所述第1钝化膜将所述金属电极的一部分覆盖；以及铜电极，其以铜为主要成分，该铜电极形成于所述金属电极之上，与所述金属电极的没有被所述第1钝化膜覆盖的部分连接，所述第2钝化膜与所述铜电极分离。
发明的效果
根据本发明，由于由有机树脂构成的第2钝化膜与铜电极分离，因此能够防止铜扩散至第2钝化膜而形成变质层，使半导体装置的可靠性提高。
附图说明
图1是表示实施方式1涉及的半导体装置的结构的图。
图2是表示实施方式1涉及的半导体装置的变形例的图。
图3是表示实施方式2涉及的半导体装置的结构的图。
具体实施方式
在下面的实施方式中，作为半导体装置的例子示出IGBT(Insulated GateBipolar Transistor)，但半导体装置也可以是二极管、RC-IGBT(Reverse-ConductingIGBT)、MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor)等。另外，下面，将第1导电型设为N型，将第2导电型设为P型而进行说明，但也可以与其相反，将第1导电型设为P型，将第2导电型设为N型。
<实施方式1>
图1是表示实施方式1涉及的半导体装置的结构的图。实施方式1涉及的半导体装置具有形成IGBT单元的单元区域、以及设置于单元区域的外侧的末端区域，图1示出单元区域与末端区域的边界部分的剖面。
该半导体装置是使用具有第1主面31及第2主面32的半导体基板30形成的。在半导体基板30，在第1主面31和第2主面32之间形成有第1导电型的漂移层1。半导体基板30的材料可以是通常的硅(Si)，也可以是例如碳化硅(SiC)等宽带隙半导体。在使用了宽带隙半导体的情况下，与使用了硅的半导体装置相比，得到高电压、大电流、高温下的动作优异的半导体装置。
在单元区域，在漂移层1的第1主面31侧形成有杂质的峰值浓度比漂移层1高的第1导电型的载流子积蓄层2，而且，在半导体基板30的第1主面31侧的表层部形成有第2导电型的基极层3。在基极层3的表层部选择性地形成有第1导电型的发射极层5、杂质的峰值浓度比基极层3高的第2导电型的接触层6。
在半导体基板30的第1主面31形成有发射极层5、将基极层3及载流子积蓄层2贯穿而到达漂移层1的有源沟槽10、将没有发射极层5的区域的基极层3以及载流子积蓄层2贯穿而到达漂移层1的哑沟槽13。哑沟槽13配置为将有源沟槽10包围。在有源沟槽10及哑沟槽13的每一者中，隔着栅极绝缘膜11埋入有栅极电极12。哑沟槽13内的栅极电极12为对于IGBT的接通、断开的切换不起作用的哑电极。
在半导体基板的第1主面31之上形成有将有源沟槽10及哑沟槽13覆盖的层间绝缘膜4。另外，在层间绝缘膜4之上形成有例如由铝(Al)等金属构成的金属电极即发射极电极14。发射极电极14穿过形成于层间绝缘膜4的接触孔，与发射极层5及接触层6连接。
在漂移层1的第2主面32侧形成有杂质的峰值浓度比漂移层1高的第1导电型的缓冲层7。而且，在半导体基板30的第2主面32侧的表层部形成有第2导电型的集电极层8。在半导体基板的第2主面32之上形成有与集电极层8连接的集电极(collector)电极(electrode)9。上述缓冲层7、集电极层8及集电极电极9不仅形成于单元区域，也形成于外周区域。
另一方面，在末端区域，在半导体基板30的第1主面31侧的表层部形成有：第2导电型的阱层15，其形成得比有源沟槽10及哑沟槽13深；以及第2导电型的RESURF层16，其与阱层15相比配置于外侧。另外，在半导体基板30的第1主面31之上，以将阱层15及RESURF层16覆盖的方式形成有场氧化膜17。在场氧化膜17之上形成有配置于阱层15的上方的栅极配线18。另外，栅极配线18被从单元区域延伸的层间绝缘膜4覆盖，在栅极配线18的上方，形成有穿过形成于层间绝缘膜4的接触孔而与栅极配线18连接的栅极流道(runner)19。
就实施方式1涉及的半导体装置而言，以将金属电极即发射极电极14的一部分和栅极流道19覆盖的方式形成有由有机树脂之外的材料构成的第1钝化膜20。另外，在第1钝化膜20之上，以隔着第1钝化膜20将发射极电极14的一部分覆盖的方式形成有由有机树脂构成的第2钝化膜21。第1钝化膜20由铜难以扩散的材料构成，在本实施方式中，将硅氮化膜(SiN)用作第1钝化膜20的材料。第1钝化膜20的材料并不限于此，例如，也可以是含有氮(N)的半绝缘膜、含有硅(Si)的氧化膜等。
在发射极电极14之上，形成有以铜为主要成分的铜电极22。铜电极22与发射极电极14的没有被第1钝化膜20覆盖的部分连接，铜电极22的端部搭在第1钝化膜20处。但是，第2钝化膜21与铜电极22分离。
通常，由有机树脂构成的钝化膜是为了确保半导体装置的耐湿性、静电耐量所不可缺少的部件。但是，如果由有机树脂构成的钝化膜与铜电极接触，则在半导体装置进行高温动作时铜向钝化膜的有机树脂扩散而形成变质层，由此，担心半导体装置的可靠性降低。
就实施方式1涉及的半导体装置而言，由有机树脂构成的第2钝化膜21与铜电极22分离，不会产生上述问题。另外，由于第2钝化膜21与铜电极22分离的部分被第1钝化膜20覆盖，因此会防止由使第2钝化膜21和铜电极22分离导致的半导体装置的耐湿性、静电耐量的降低。因此，半导体装置的可靠性提高。
但是，如果第2钝化膜21与铜电极22之间的间隔窄，则在由于导线键合等接合工序中施加的能量而使铜电极22产生了变形的情况下，存在变形后的铜电极22与第2钝化膜21接触的风险。因此，优选第2钝化膜21与铜电极22之间的间隔宽到即使铜电极22产生变形，变形后的铜电极22也不会与第2钝化膜21接触的程度，具体而言，优选设为大于或等于铜电极22的厚度。
此外，设置于发射极电极14之上的铜电极22能够通过电镀或化学镀形成。在通过电镀形成铜电极22的情况下，成为铜电极22的镀膜形成于半导体基板30整面，由于需要通过使用了抗蚀剂掩模的蚀刻进行图案化，因此如图1所示铜电极22的端面在剖视时呈平面状。另一方面，在通过化学镀形成铜电极22的情况下，成为铜电极22的镀膜选择性地形成于从第1钝化膜20露出的由金属构成的发射极电极14之上而生长，由于不需要进行图案化，因此如图2所示铜电极22的端面在剖视时呈曲面状(圆弧状)。
另外，在图1中示出了在半导体装置的单元区域与末端区域的边界部分设置有第1钝化膜20及第2钝化膜21的例子，但第1钝化膜20及第2钝化膜21例如也可以设置于单元区域内的多个IGBT单元之间等。在该情况下，在单元区域内也使第2钝化膜21和铜电极22分离，由此得到与上述相同的效果。
<实施方式2>
图3是表示实施方式2涉及的半导体装置的结构的图。图3的半导体装置的结构与图1的结构相比，在铜电极22的下表面设置有防止铜扩散的阻挡金属23。因此，阻挡金属23夹在铜电极22和发射极电极14之间、铜电极22和第1钝化膜20之间。作为阻挡金属23的材料，能够使用Ta、TaN、Ti、TiN、W、TiW等。由于其它要素与图1相同，因此省略它们的说明。
通过设置阻挡金属23，从而防止铜电极22的铜向发射极电极14、层间绝缘膜4等扩散，进一步提高半导体装置的可靠性。
此外，可以将各实施方式自由地组合，对各实施方式适当进行变形、省略。
标号的说明
1漂移层，2载流子积蓄层，3基极层，4层间绝缘膜，5发射极层，6接触层，7缓冲层，8集电极层，9集电极电极，10有源沟槽，11栅极绝缘膜，12栅极电极，13哑沟槽，14发射极电极，15阱层，16RESURF层，17场氧化膜，18栅极配线，19栅极流道，20第1钝化膜，21第2钝化膜，22铜电极，23阻挡金属，30半导体基板，31第1主面，32第2主面。

Claims (7)

1.一种半导体装置，其具有：
金属电极，其形成于半导体基板之上；
第1钝化膜，其由有机树脂之外的材料构成，将所述金属电极的一部分覆盖；
第2钝化膜，其由有机树脂构成，隔着所述第1钝化膜将所述金属电极的一部分覆盖；以及
铜电极，其以铜为主要成分，该铜电极形成于所述金属电极之上，与所述金属电极的没有被所述第1钝化膜覆盖的部分连接，
所述第2钝化膜与所述铜电极分离。
2.根据权利要求1所述的半导体装置，其中，
所述第2钝化膜与所述铜电极的间隔大于或等于所述铜电极的厚度。
3.根据权利要求1或2所述的半导体装置，其中，
所述铜电极的端面在剖视时为平面状。
4.根据权利要求1或2所述的半导体装置，其中，
所述铜电极的端面在剖视时为曲面状。
5.根据权利要求1至4中任一项所述的半导体装置，其中，
防止铜扩散的阻挡金属夹在所述铜电极和所述金属电极之间。
6.根据权利要求1至5中任一项所述的半导体装置，其中，
所述铜电极的端部搭在所述第1钝化膜处。
7.根据权利要求1至6中任一项所述的半导体装置，其中，
所述第1钝化膜的材料为含有硅的氮化膜、含有硅的氧化膜、或含有氮的半绝缘膜中的任意者。
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