CN116260401A - Radio frequency power amplifier and radio frequency power amplifier module - Google Patents

Radio frequency power amplifier and radio frequency power amplifier module Download PDF

Info

Publication number
CN116260401A
CN116260401A CN202310480861.3A CN202310480861A CN116260401A CN 116260401 A CN116260401 A CN 116260401A CN 202310480861 A CN202310480861 A CN 202310480861A CN 116260401 A CN116260401 A CN 116260401A
Authority
CN
China
Prior art keywords
capacitor
power amplifier
transistor
bias circuit
output end
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310480861.3A
Other languages
Chinese (zh)
Inventor
朱魏
郭嘉帅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Volans Technology Co Ltd
Original Assignee
Shenzhen Volans Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Volans Technology Co Ltd filed Critical Shenzhen Volans Technology Co Ltd
Priority to CN202310480861.3A priority Critical patent/CN116260401A/en
Publication of CN116260401A publication Critical patent/CN116260401A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a radio frequency power amplifier and a radio frequency power amplifier module, wherein the radio frequency power amplifier comprises a signal input end, an input matching network, a first capacitor, a second capacitor, a first bias circuit, a first power amplifier, a third capacitor, a fourth capacitor, a second bias circuit, a second power amplifier, an interstage matching network, a fifth capacitor, a sixth capacitor, a third bias circuit, a third power amplifier, a seventh capacitor, an eighth capacitor, a fourth bias circuit, a fourth power amplifier, an output matching network and a signal output end. The radio frequency power amplifier can effectively inhibit the gain compression and the linearity distortion deterioration of the radio frequency power amplifier.

Description

Radio frequency power amplifier and radio frequency power amplifier module
Technical Field
The present invention relates to the field of wireless communications technologies, and in particular, to a radio frequency power amplifier and a radio frequency power amplifier module.
Background
With the progress of the information age, wireless communication technology has been rapidly developed, and has become an integral part of the development of mobile phones, wireless local area networks, bluetooth and the like, while the progress of wireless communication technology is not separated from the development of radio frequency circuits and microwave technology.
The portable mobile communication device is one application of wireless communication, and in the power amplifier of the mobile communication device, the distance between the base station and the mobile device can make the output power of the power amplifier need to be correspondingly increased or correspondingly reduced, that is, the higher the gain is, the better, preferably more than 30dB, when the power amplifier is in a high power mode, the opposite, the gain cannot be too high when the power amplifier is in a low power mode, and generally needs to be lower than 20dB to meet the application of the whole machine.
The related art power amplifier generally employs matching of S parameters to increase the gain of the power amplifier in the high power mode and decrease the gain of the power amplifier in the low power mode, which can increase the gain of the power amplifier in the high power mode and decrease the gain of the power amplifier in the low power mode, but deteriorate linearity distortion of the power amplifier.
Disclosure of Invention
The invention aims to provide a radio frequency power amplifier which solves the problems that the power amplifier in the related art can improve the gain when in a high power mode and reduce the gain when in a low power mode, but can worsen the linearity distortion.
In order to solve the technical problem, in a first aspect, the present invention provides a radio frequency power amplifier, which includes a signal input terminal, an input matching network, a first capacitor, a second capacitor, a first bias circuit, a first power amplifier, a third capacitor, a fourth capacitor, a second bias circuit, a second power amplifier, an inter-stage matching network, a fifth capacitor, a sixth capacitor, a third bias circuit, a third power amplifier, a seventh capacitor, an eighth capacitor, a fourth bias circuit, a fourth power amplifier, an output matching network, and a signal output terminal;
the input end of the input matching network is connected to the signal input end;
a first end of the first capacitor is connected to an output end of the input matching network; the first end of the second capacitor is connected to the first end of the first capacitor, and the second end of the second capacitor is connected to the second end of the first capacitor; the output end of the first bias circuit is connected to the second end of the first capacitor;
the input end of the first power amplifier is connected to the second end of the first capacitor, the first output end of the first power amplifier is connected to a first power supply, and the second output end of the first power amplifier is grounded; the first bias circuit is used for providing bias voltage for the first power amplifier;
the first end of the third capacitor is connected to the output end of the input matching network; the first end of the fourth capacitor is connected to the first end of the third capacitor, and the second end of the fourth capacitor is connected to the second end of the third capacitor; the output end of the second bias circuit is connected to the second end of the fourth capacitor;
the input end of the second power amplifier is connected to the second end of the third capacitor, the first output end of the second power amplifier is connected to the first output end of the first power amplifier, and the second output end of the second power amplifier is grounded; the second bias circuit is used for providing bias voltage for the second power amplifier;
the input end of the interstage matching network is connected to the first output end of the first power amplifier;
a first end of the fifth capacitor is connected to an output end of the interstage matching network; the first end of the sixth capacitor is connected to the first end of the fifth capacitor, and the second end of the sixth capacitor is connected to the second end of the fifth capacitor; the output end of the third bias circuit is connected to the second end of the sixth capacitor;
the input end of the third power amplifier is connected to the second end of the fifth capacitor, the first output end of the third power amplifier is connected to a second power supply, and the second output end of the third power amplifier is grounded; the third bias circuit is used for providing bias voltage for the third power amplifier;
a first end of the seventh capacitor is connected to an output end of the interstage matching network; the first end of the eighth capacitor is connected to the first end of the seventh capacitor, and the second end of the eighth capacitor is connected to the second end of the seventh capacitor; the output end of the fourth bias circuit is connected to the second end of the eighth capacitor;
the input end of the fourth power amplifier is connected to the second end of the seventh capacitor, the first output end of the fourth power amplifier is connected to the first output end of the third power amplifier, and the second output end of the fourth power amplifier is grounded; the fourth bias circuit is used for providing bias voltage for the fourth power amplifier;
the input end of the output matching network is connected to the first output end of the third power amplifier;
the signal output end is connected to the output end of the output matching network.
Preferably, the radio frequency power amplifier further comprises a first resistor, a second resistor, a third resistor and a fourth resistor;
the two ends of the first resistor are respectively connected to the second end of the second capacitor and the second end of the first capacitor; two ends of the second resistor are respectively connected to the second end of the fourth capacitor and the second end of the third capacitor; two ends of the third resistor are respectively connected to the second end of the sixth capacitor and the second end of the fifth capacitor; the two ends of the fourth resistor are respectively connected to the second end of the eighth capacitor and the second end of the seventh capacitor.
Preferably, the radio frequency power amplifier further comprises a first inductor and a second inductor;
two ends of the first inductor are respectively connected to a first output end of the first power amplifier and the first power supply; two ends of the second inductor are respectively connected to the first output end of the third power amplifier and the second power supply.
Preferably, the radio frequency power amplifier further comprises a third inductor, a fourth inductor, a fifth inductor and a sixth inductor;
the third inductor is connected in series to the second end of the second capacitor; the fourth inductor is connected in series with only the second end of the fourth capacitor; the fifth inductor is connected in series to the second end of the sixth capacitor; the sixth inductor is connected in series to the second end of the eighth capacitor.
Preferably, the first power amplifier includes a first transistor; the second power amplifier includes a second transistor; the third power amplifier includes a third transistor; the fourth power amplifier includes a fourth transistor.
Preferably, the first transistor, the second transistor, the third transistor and the fourth transistor are heterojunction bipolar transistors or field effect transistors.
Preferably, the first bias circuit includes a fifth transistor, a fifth resistor, a sixth transistor, a ninth capacitor, and a seventh transistor;
a first output end of the fifth transistor is connected to a first voltage terminal, and a second output end of the fifth transistor is used as an output end of the first bias circuit;
a first end of the fifth resistor is connected to a second voltage terminal;
an input terminal of the sixth transistor is connected to an input terminal of the fifth transistor, and a first output terminal of the sixth transistor is connected to a second terminal of the fifth resistor;
an input end of the seventh transistor is connected to a first output end of the seventh transistor and is connected to a second output end of the sixth transistor, and a second output end of the seventh transistor is grounded;
a first terminal of the ninth capacitor is connected to the second output terminal of the seven transistor, and a second terminal of the ninth capacitor is connected to the input terminal of the fifth transistor.
Preferably, the fifth transistor, the sixth transistor and the seventh transistor are all heterojunction bipolar transistors or field effect transistors.
Preferably, the circuit structures of the second bias circuit, the third bias circuit, and the fourth bias circuit are the same as the circuit structures of the first bias circuit.
In a second aspect, the present invention provides a radio frequency power amplifier module, which includes a radio frequency power amplifier as described above.
Compared with the related art, the radio frequency power amplifier in the invention can respectively control the working states of the first power amplifier, the second power amplifier, the third power amplifier and the fourth power amplifier by controlling the working states of the first bias circuit, the second bias circuit, the third bias circuit and the fourth bias circuit, so that the gain is improved when the radio frequency power amplifier is in a high power mode, the gain is reduced when the radio frequency power amplifier is in a low power mode, the added second capacitor, the fourth capacitor, the sixth capacitor and the sixth capacitor are regarded as open circuits relative to the direct current component, and are regarded as short-circuit conduction relative to the alternating current component, so that the bias current components of the bias currents of the first bias circuit, the second bias circuit, the third bias circuit and the fourth bias circuit are respectively led to the corresponding first power amplifier, the second power amplifier, the third power amplifier and the fourth power amplifier, and the input ends of the corresponding first power amplifier, the second power amplifier, the third power amplifier and the fourth power amplifier can be respectively and effectively prevented from deteriorating the radio frequency linearity of the amplifier through the first capacitor to the eighth capacitor.
Drawings
For a clearer description of the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the description below are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art, wherein:
fig. 1 is a schematic circuit connection diagram of a first rf power amplifier according to an embodiment of the present invention;
fig. 2 is a schematic circuit connection diagram of a first bias circuit in a first rf power amplifier according to an embodiment of the present invention;
fig. 3 is a schematic circuit connection diagram of a second rf power amplifier according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides a radio frequency power amplifier 100, which is shown in fig. 1, and includes a signal input end RFIN, an input matching network 1, a first capacitor C1, a second capacitor C2, a first bias circuit 2, a first power amplifier, a third capacitor C3, a fourth capacitor C4, a second bias circuit 3, a second power amplifier, an inter-stage matching network 4, a fifth capacitor C5, a sixth capacitor C6, a third bias circuit 5, a third power amplifier, a seventh capacitor C7, an eighth capacitor C8, a fourth bias circuit 6, a fourth power amplifier, an output matching network 7, and a signal output end RFOUT.
Specifically, an input of the input matching network 1 is connected to a signal input RFIN.
The first end of the first capacitor C1 is connected to the output end of the input matching network 1; the first end of the second capacitor C2 is connected to the first end of the first capacitor C1, and the second end of the second capacitor C2 is connected to the second end of the first capacitor C1; the output terminal of the first bias circuit 2 is connected to the second terminal of the first capacitor C1.
The input end of the first power amplifier is connected to the second end of the first capacitor C1, the first output end of the first power amplifier is connected to the first power supply VCC1, and the second output end of the first power amplifier is grounded; the first bias circuit 2 is for providing a bias voltage for the first power amplifier.
The first end of the third capacitor C3 is connected to the output end of the input matching network 1; the first end of the fourth capacitor C4 is connected to the first end of the third capacitor C3, and the second end of the fourth capacitor C4 is connected to the second end of the third capacitor C3; the output terminal of the second bias circuit 3 is connected to the second terminal of the fourth capacitor C4.
The input end of the second power amplifier is connected to the second end of the third capacitor C3, the first output end of the second power amplifier is connected to the first output end of the first power amplifier, and the second output end of the second power amplifier is grounded; the second bias circuit 3 is for providing a bias voltage for the second power amplifier.
The input of the inter-stage matching network 4 is connected to a first output of the first power amplifier.
A first end of the fifth capacitor C5 is connected to the output end of the interstage matching network 4; the first end of the sixth capacitor C6 is connected to the first end of the fifth capacitor C5, and the second end of the sixth capacitor C6 is connected to the second end of the fifth capacitor C5; the output terminal of the third bias circuit 5 is connected to the second terminal of the sixth capacitor C6.
The input end of the third power amplifier is connected to the second end of the fifth capacitor C5, the first output end of the third power amplifier is connected to the second power supply VCC2, and the second output end of the third power amplifier is grounded; the third bias circuit 5 is for providing a bias voltage for the third power amplifier.
A first end of the seventh capacitor C7 is connected to the output end of the inter-stage matching network 4; the first end of the eighth capacitor C8 is connected to the first end of the seventh capacitor C7, and the second end of the eighth capacitor C8 is connected to the second end of the seventh capacitor C7; the output terminal of the fourth bias circuit 6 is connected to the second terminal of the eighth capacitor C8.
The input end of the fourth power amplifier is connected to the second end of the seventh capacitor C7, the first output end of the fourth power amplifier is connected to the first output end of the third power amplifier, and the second output end of the fourth power amplifier is grounded; the fourth bias circuit 6 is for providing a bias voltage for the fourth power amplifier.
The input of the output matching network 7 is connected to the first output of the third power amplifier.
The signal output RFOUT is connected to the output of the output matching network 7.
The signal input terminal RFIN is used for inputting a radio frequency signal.
The first capacitor C1, the third capacitor C3, the fifth capacitor C5 and the seventh capacitor C7 are used as blocking capacitors, the first capacitor C1 and the third capacitor C3 are used for isolating a DC power supply (not shown) to prevent the DC power supply from entering the signal input terminal RFIN, and the fifth capacitor C5 and the seventh capacitor C7 are used for isolating the first power supply VCC1 to prevent the first power supply VCC1 from entering the corresponding third power amplifier and fourth power amplifier.
The second capacitor C2, the fourth capacitor C4, the sixth capacitor C6, and the eighth capacitor C8 serve as capacitors for suppressing linearity distortion, that is, for suppressing deterioration of linearity distortion of the radio frequency power amplifier 100.
The first bias circuit 2, the second bias circuit 3, the third bias circuit 5, and the fourth bias circuit 6 supply bias voltages to the first power amplifier, the second power amplifier, the third power amplifier, and the fourth power amplifier, respectively.
The first power amplifier, the second power amplifier, the third power amplifier and the fourth power amplifier are respectively used for amplifying the radio frequency signals input to the input ends of the first power amplifier, the second power amplifier, the third power amplifier and the fourth power amplifier.
The input matching network 1 is used for impedance matching so as to minimize the power transmission loss input between the first power amplifier and the second power amplifier; the inter-stage matching network 4 is used for performing impedance matching between the first power amplifier and the second power amplifier of the front stage and the third power amplifier and the fourth power amplifier of the rear stage so that the power output by the front stage can reach the rear stage more; the output matching network 7 is used to perform impedance matching between the third and fourth power amplifiers to the signal output terminal RFOUT to maximize the output power.
The signal output terminal RFOUT is configured to output the amplified radio frequency signal.
Specifically, the first power amplifier includes a first transistor Q1; the second power amplifier includes a second transistor Q2; the third power amplifier includes a third transistor Q3; the fourth power amplifier includes a fourth transistor Q4.
Of course, according to practical requirements, the first transistor Q1, the second transistor Q2, the third transistor Q3 and the fourth transistor Q4 may be one or more parallel transistors, and the specific number depends on the area of the transistors after the simulation.
The first transistor Q1, the second transistor Q2, the third transistor Q3 and the fourth transistor Q4 are heterojunction bipolar transistors (HBTs, heterojunction Bipolar Transistor) or field effect transistors (MOSFETs, metal oxide semiconductor FieldEffect Transistor, metal oxide semiconductor field effect transistors).
If the heterojunction bipolar transistor is selected, the base electrode of the heterojunction bipolar transistor is used as the input end of the corresponding power amplifier, the collector electrode of the heterojunction bipolar transistor is used as the first output end of the corresponding power amplifier, and the emitter electrode of the heterojunction bipolar transistor is used as the second output end of the corresponding power amplifier; if the field effect transistor is selected, the gate of the field effect transistor is used as the input end of the corresponding power amplifier, the drain of the field effect transistor is used as the first output end of the corresponding power amplifier, and the source of the field effect transistor is used as the second output end of the corresponding power amplifier.
Specifically, as shown in conjunction with fig. 2, the first bias circuit 2 includes a fifth transistor Q5, a fifth resistor R5, a sixth transistor Q6, a ninth capacitor C9, and a seventh transistor Q7.
A first output terminal of the fifth transistor Q5 is connected to the first voltage terminal VBAT, and a second output terminal of the fifth transistor Q5 serves as an output terminal of the first bias circuit 2.
The first end of the fifth resistor R5 is connected to the second voltage terminal Vreg.
An input terminal of the sixth transistor Q6 is connected to an input terminal of the fifth transistor Q5, and a first output terminal of the sixth transistor Q6 is connected to a second terminal of the fifth resistor R5.
An input terminal of the seventh transistor Q7 is connected to the first output terminal of the seventh transistor Q7 and to the second output terminal of the sixth transistor Q6, and the second output terminal of the seventh transistor Q7 is grounded.
A first terminal of the ninth capacitor C9 is connected to the second output terminal of the seven transistor, and a second terminal of the ninth capacitor C9 is connected to the input terminal of the fifth transistor Q5.
The fifth resistor R5 is used for voltage division and adjustment of the bias voltage output finally; the sixth transistor Q6 and the seventh transistor Q7 are respectively used as diodes, so that the clamping effect can be achieved; the fifth transistor Q5 is configured to output a bias current Ib to provide a bias voltage for the corresponding field effect transistor; the first voltage terminal VBAT is configured to provide an operating voltage for the fifth transistor Q5, so that the fifth transistor Q5 can operate normally, and thus output the bias current Ib; the second voltage terminal Vreg is used to supply power to the entire bias circuit.
The fifth transistor Q5, the sixth transistor Q6, and the seventh transistor Q7 are all heterojunction bipolar transistors or field effect transistors; if the heterojunction bipolar transistor is selected, the base electrode of the heterojunction bipolar transistor is used as the input end of the corresponding transistor, the collector electrode of the heterojunction bipolar transistor is used as the first output end of the corresponding transistor, and the emitter electrode of the heterojunction bipolar transistor is used as the second output end of the corresponding transistor; if the field effect transistor is selected, the gate of the field effect transistor is used as the input end of the corresponding transistor, the drain of the field effect transistor is used as the first output end of the corresponding transistor, and the source of the field effect transistor is used as the second output end of the corresponding transistor.
In this embodiment, the circuit structures of the second bias circuit 3, the third bias circuit 5 and the fourth bias circuit 6 are the same as the circuit structure of the first bias circuit 2, and will not be described here.
In this embodiment, the rf power amplifier 100 further includes a first resistor R1, a second resistor R2, a third resistor R3, and a fourth resistor.
The two ends of the first resistor R1 are respectively connected to the second end of the second capacitor C2 and the second end of the first capacitor C1; the two ends of the second resistor R2 are respectively connected to the second end of the fourth capacitor C4 and the second end of the third capacitor C3; the two ends of the third resistor R3 are respectively connected to the second end of the sixth capacitor C6 and the second end of the fifth capacitor C5; both ends of the fourth resistor are connected to the second end of the eighth capacitor C8 and the second end of the seventh capacitor C7, respectively.
The first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor are used as ballast resistors for improving the thermal stability of the transistors which are connected correspondingly.
In this embodiment, the rf power amplifier 100 further includes a first inductor L1 and a second inductor L2.
Two ends of the first inductor L1 are respectively connected to a first output end of the first power amplifier and a first power supply VCC1; both ends of the second inductor L2 are connected to the first output terminal of the third power amplifier and the second power supply VCC2, respectively.
The first inductor L1 and the second inductor L2 serve as choke inductors for preventing radio frequency signals from leaking to the corresponding first power supply VCC1 and second power supply VCC2.
In addition, as shown in fig. 3, the rf power amplifier 100 further includes a third inductor L3, a fourth inductor L4, a fifth inductor L5 and a sixth inductor L6,
the third inductor L3 is connected in series to the second end of the second capacitor C2; the fourth inductor L4 is connected in series with only the second end of the fourth capacitor C4; the fifth inductor L5 is connected in series to the second end of the sixth capacitor C6; the sixth inductor L6 is connected in series to the second terminal of the eighth capacitor C8.
The third inductor L3, the fourth inductor L4, the fifth inductor L5 and the sixth inductor L6 may form a resonant circuit with the capacitors connected in series respectively, so as to change the resonant frequency, thereby changing the ac component of the bias current Ib output by the corresponding bias circuit respectively, and further more precisely suppressing the gain compression and the deterioration of the linearity distortion of the radio frequency power amplifier 100.
The above description of "connection" is understood to mean a connection manner in which "electrical connection", "electrical connection" and "communication connection" between two devices may be used for radio frequency signal transmission.
In order to better embody the technical effect that the rf power amplifier 100 in the high power mode can increase the gain or can decrease the gain when in the low power mode in the present invention, the following will illustrate the working principle of the rf power amplifier 100:
when the rf power amplifier 100 is in the high power mode, the first bias circuit 2, the second bias circuit 3, the third bias circuit 5 and the fourth bias circuit 6 respectively operate in different states, specifically, the first bias circuit 2 provides a bias voltage for the first transistor Q1, the second bias circuit 3 provides a bias voltage for the second transistor Q2, the third bias circuit 5 provides a bias voltage for the third transistor Q3, and the fourth bias circuit 6 provides a bias voltage for the fourth transistor Q4, so that the first transistor Q1 to the fourth transistor Q4 are all in an operating state, thereby maximizing the gain of the rf power amplifier 100, i.e., improving the gain.
When the rf power amplifier 100 is in the low power mode, the first bias circuit 2, the second bias circuit 3, the third bias circuit 5 and the fourth bias circuit 6 respectively operate in different states, specifically, the first bias circuit 2 does not provide a bias voltage for the first transistor Q1, the second bias circuit 3 provides a bias voltage for the second transistor Q2, the third bias circuit 5 does not provide a bias voltage for the third transistor Q3, and the fourth bias circuit 6 provides a bias voltage for the fourth transistor Q4, so that the first transistor Q1 and the third transistor Q3 are in an inactive state, and the second transistor Q2 and the fourth transistor Q4 are in an active state, thereby reducing the gain of the rf power amplifier 100 and improving the overall efficiency thereof.
Of course, according to the gain requirement of the rf power amplifier 100, the first transistor Q1 to the fourth transistor Q4 may be combined in different operating states in the high power mode or the low power mode, for example, the first transistor Q1 is operated, the second transistor Q2 is not operated, the third transistor Q3 is operated, and the fourth transistor Q4 is not operated, so as to achieve the effect of improving the gain; for example, the first transistor Q1 is not operated, the second transistor Q2 is operated, the third transistor Q3 is operated, and the fourth transistor Q4 is not operated, so that the effect of reducing gain and efficiency can be achieved.
Compared with the related art, the rf power amplifier 100 in this embodiment can control the operating states of the first power amplifier, the second power amplifier, the third power amplifier and the fourth power amplifier by controlling the operating states of the first bias circuit 2, the second bias circuit 3, the third bias circuit 5 and the fourth bias circuit 6, so that the gain is increased when the rf power amplifier 100 is in the high power mode, the gain is reduced when the rf power amplifier 100 is in the low power mode, and the added second capacitor C2, fourth capacitor C4, sixth capacitor C6 and sixth capacitor C6 are regarded as open circuits with respect to the dc component, and are regarded as short-circuit conduction with respect to the ac component, so that the bias current Ib of the first bias circuit 2, the second bias circuit 3, the third bias circuit 5 and the fourth bias circuit 6 flows to the corresponding first power amplifier, the second power amplifier, the third power amplifier and the fourth power amplifier, respectively, and the radio frequency distortion of the radio frequency input to the corresponding first power amplifier, the second power amplifier, the fourth power amplifier and the linear distortion of the fourth power amplifier can be suppressed by the first capacitor C1 to the eighth capacitor C8, respectively.
The invention also provides an embodiment of a radio frequency power amplifier module, which comprises the radio frequency power amplifier 100 in the embodiment. Because the rf power amplifier module in this embodiment includes the rf power amplifier 100 in the above embodiment, the technical effects achieved by the rf power amplifier 100 in the above embodiment can also be achieved, which is not described herein.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.

Claims (10)

1. The radio frequency power amplifier is characterized by comprising a signal input end, an input matching network, a first capacitor, a second capacitor, a first bias circuit, a first power amplifier, a third capacitor, a fourth capacitor, a second bias circuit, a second power amplifier, an interstage matching network, a fifth capacitor, a sixth capacitor, a third bias circuit, a third power amplifier, a seventh capacitor, an eighth capacitor, a fourth bias circuit, a fourth power amplifier, an output matching network and a signal output end;
the input end of the input matching network is connected to the signal input end;
a first end of the first capacitor is connected to an output end of the input matching network; the first end of the second capacitor is connected to the first end of the first capacitor, and the second end of the second capacitor is connected to the second end of the first capacitor; the output end of the first bias circuit is connected to the second end of the first capacitor;
the input end of the first power amplifier is connected to the second end of the first capacitor, the first output end of the first power amplifier is connected to a first power supply, and the second output end of the first power amplifier is grounded; the first bias circuit is used for providing bias voltage for the first power amplifier;
the first end of the third capacitor is connected to the output end of the input matching network; the first end of the fourth capacitor is connected to the first end of the third capacitor, and the second end of the fourth capacitor is connected to the second end of the third capacitor; the output end of the second bias circuit is connected to the second end of the fourth capacitor;
the input end of the second power amplifier is connected to the second end of the third capacitor, the first output end of the second power amplifier is connected to the first output end of the first power amplifier, and the second output end of the second power amplifier is grounded; the second bias circuit is used for providing bias voltage for the second power amplifier;
the input end of the interstage matching network is connected to the first output end of the first power amplifier;
a first end of the fifth capacitor is connected to an output end of the interstage matching network; the first end of the sixth capacitor is connected to the first end of the fifth capacitor, and the second end of the sixth capacitor is connected to the second end of the fifth capacitor; the output end of the third bias circuit is connected to the second end of the sixth capacitor;
the input end of the third power amplifier is connected to the second end of the fifth capacitor, the first output end of the third power amplifier is connected to a second power supply, and the second output end of the third power amplifier is grounded; the third bias circuit is used for providing bias voltage for the third power amplifier;
a first end of the seventh capacitor is connected to an output end of the interstage matching network; the first end of the eighth capacitor is connected to the first end of the seventh capacitor, and the second end of the eighth capacitor is connected to the second end of the seventh capacitor; the output end of the fourth bias circuit is connected to the second end of the eighth capacitor;
the input end of the fourth power amplifier is connected to the second end of the seventh capacitor, the first output end of the fourth power amplifier is connected to the first output end of the third power amplifier, and the second output end of the fourth power amplifier is grounded; the fourth bias circuit is used for providing bias voltage for the fourth power amplifier;
the input end of the output matching network is connected to the first output end of the third power amplifier;
the signal output end is connected to the output end of the output matching network.
2. The radio frequency power amplifier of claim 1, further comprising a first resistor, a second resistor, a third resistor, and a fourth resistor;
the two ends of the first resistor are respectively connected to the second end of the second capacitor and the second end of the first capacitor; two ends of the second resistor are respectively connected to the second end of the fourth capacitor and the second end of the third capacitor; two ends of the third resistor are respectively connected to the second end of the sixth capacitor and the second end of the fifth capacitor; the two ends of the fourth resistor are respectively connected to the second end of the eighth capacitor and the second end of the seventh capacitor.
3. The radio frequency power amplifier of claim 1, further comprising a first inductance and a second inductance;
two ends of the first inductor are respectively connected to a first output end of the first power amplifier and the first power supply; two ends of the second inductor are respectively connected to the first output end of the third power amplifier and the second power supply.
4. The radio frequency power amplifier of claim 2, further comprising a third inductance, a fourth inductance, a fifth inductance, and a sixth inductance;
the third inductor is connected in series to the second end of the second capacitor; the fourth inductor is connected in series with only the second end of the fourth capacitor; the fifth inductor is connected in series to the second end of the sixth capacitor; the sixth inductor is connected in series to the second end of the eighth capacitor.
5. The radio frequency power amplifier of claim 1, wherein the first power amplifier comprises a first transistor; the second power amplifier includes a second transistor; the third power amplifier includes a third transistor; the fourth power amplifier includes a fourth transistor.
6. The radio frequency power amplifier of claim 5, wherein the first transistor, the second transistor, the third transistor, and the fourth transistor are all heterojunction bipolar transistors or field effect transistors.
7. The radio frequency power amplifier of claim 1, wherein the first bias circuit comprises a fifth transistor, a fifth resistor, a sixth transistor, a ninth capacitor, and a seventh transistor;
a first output end of the fifth transistor is connected to a first voltage terminal, and a second output end of the fifth transistor is used as an output end of the first bias circuit;
a first end of the fifth resistor is connected to a second voltage terminal;
an input terminal of the sixth transistor is connected to an input terminal of the fifth transistor, and a first output terminal of the sixth transistor is connected to a second terminal of the fifth resistor;
an input end of the seventh transistor is connected to a first output end of the seventh transistor and is connected to a second output end of the sixth transistor, and a second output end of the seventh transistor is grounded;
a first terminal of the ninth capacitor is connected to the second output terminal of the seven transistor, and a second terminal of the ninth capacitor is connected to the input terminal of the fifth transistor.
8. The radio frequency power amplifier of claim 7, wherein the first bias transistor, the second bias transistor, and the third bias transistor are all heterojunction bipolar transistors or field effect transistors.
9. The radio frequency power amplifier according to claim 7 or 8, wherein the circuit configuration of the second bias circuit, the third bias circuit, and the fourth bias circuit is the same as the circuit configuration of the first bias circuit.
10. A radio frequency power amplifier module, characterized in that it comprises a radio frequency power amplifier according to any one of claims 1 to 9.
CN202310480861.3A 2023-04-28 2023-04-28 Radio frequency power amplifier and radio frequency power amplifier module Pending CN116260401A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310480861.3A CN116260401A (en) 2023-04-28 2023-04-28 Radio frequency power amplifier and radio frequency power amplifier module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310480861.3A CN116260401A (en) 2023-04-28 2023-04-28 Radio frequency power amplifier and radio frequency power amplifier module

Publications (1)

Publication Number Publication Date
CN116260401A true CN116260401A (en) 2023-06-13

Family

ID=86682754

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310480861.3A Pending CN116260401A (en) 2023-04-28 2023-04-28 Radio frequency power amplifier and radio frequency power amplifier module

Country Status (1)

Country Link
CN (1) CN116260401A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116961690A (en) * 2023-09-19 2023-10-27 深圳飞骧科技股份有限公司 Dual-mode radio frequency front end module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116961690A (en) * 2023-09-19 2023-10-27 深圳飞骧科技股份有限公司 Dual-mode radio frequency front end module
CN116961690B (en) * 2023-09-19 2023-11-28 深圳飞骧科技股份有限公司 Dual-mode radio frequency front end module

Similar Documents

Publication Publication Date Title
JP3103712B2 (en) Power amplifier and amplification method
KR100831144B1 (en) AC power amplifier having high power-added efficiency
US20050012547A1 (en) High linearity doherty communication amplifier with phase control
US11658622B2 (en) Power amplifier circuit
CN113054915B (en) Temperature compensation bias circuit applied to radio frequency power amplifier
CN116260401A (en) Radio frequency power amplifier and radio frequency power amplifier module
EP4207591A1 (en) Differential power amplifier
CN116647198A (en) power amplifier circuit
CN114826164A (en) Doherty power amplifier based on improved interstage matching
CN104348424A (en) Split biased radio frequency power amplifier with enhanced linearity
CN116346051A (en) AC voltage stacked power amplifier
CN115865013A (en) High-linearity power amplifier based on Baseband impedance matching
Lee et al. InGaP/GaAs HBT broadband power amplifier IC with 54.3% fractional bandwidth based on cascode structure
Mansour et al. Analysis and Design of a 5G Multi-Mode Power Amplifier using 130 nm CMOS technology
CN110719077B (en) Power amplifier and electronic equipment
US11894815B2 (en) Power amplifier and electronic device
CN114826165A (en) Compact Doherty power amplifier
CN219268826U (en) Power amplifier and differential power amplifier circuit
JP2007243872A (en) Transistor circuit and high-frequency amplifier using the same
CN115913155B (en) High-linearity power amplifier suitable for 5G system
CN219536035U (en) Radio frequency power amplifier circuit and radio frequency chip
CN217522806U (en) Radio frequency driving amplifier
CN217159562U (en) Circuit with double topological structures
US20230141220A1 (en) Power amplifier circuit
KR102457874B1 (en) Power amplifier using multi-stage linearization

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination