CN116256707A - Dual-polarization array radar and PIN tube SPDT switching device and method thereof - Google Patents

Dual-polarization array radar and PIN tube SPDT switching device and method thereof Download PDF

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Publication number
CN116256707A
CN116256707A CN202310538757.5A CN202310538757A CN116256707A CN 116256707 A CN116256707 A CN 116256707A CN 202310538757 A CN202310538757 A CN 202310538757A CN 116256707 A CN116256707 A CN 116256707A
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voltage
diode
resistor
spdt switch
module
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CN116256707B (en
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陈国超
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Zhejiang Yitong Huasheng Technology Co ltd
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Zhejiang Yitong Huasheng Technology Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/40—Means for monitoring or calibrating
    • G01S7/4004—Means for monitoring or calibrating of parts of a radar system
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled

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  • Engineering & Computer Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electronic Switches (AREA)

Abstract

The invention discloses a dual-polarization array radar and a PIN tube SPDT switching device and method thereof, wherein the device comprises a control module, a first driving module, a second driving module, an acquisition module and a PIN tube SPDT switching module; the control module is connected with the first driving module, the second driving module and the acquisition module; the first driving module is connected with the first end of the PIN pipe SPDT switch module through a resistor R1, and the second driving module is connected with the second end of the PIN pipe SPDT switch module through a resistor R2; and the third end of the PIN pipe SPDT switch module is connected with the T/R component, and the fourth end and the fifth end of the PIN pipe SPDT switch module are connected with the antenna. According to the invention, the voltage at two ends of the resistor is directly obtained through the acquisition module, and the working state of the PIN pipe SPDT switch module is judged according to the voltage at two ends of the resistor, so that the state self-checking is realized.

Description

Dual-polarization array radar and PIN tube SPDT switching device and method thereof
Technical Field
The invention belongs to the technical field of radar radio frequency link transceiving sharing, and particularly relates to a double-polarization array radar and a PIN pipe SPDT (Single Pole Double Throw, single-pole double-throw) switching device and method with a state self-checking function.
Background
Dual polarization array weather radar has a large number of T/R assemblies capable of transmitting channel horizontally polarized waves and vertically polarized waves. In view of cost saving and simplified structure, a structure that a receiving channel and a transmitting channel share one antenna is generally adopted in the T/R assembly, so that a duplex device becomes an indispensable device in the T/R assembly, and the transmission channel final stage is generally a high-power amplifier, so that requirements on passing power and insertion loss of the duplex device are high.
Currently, the duplex devices used in T/R assemblies are mainly circulators and switching devices. The circulator has the advantages of small insertion loss, convenient use and no need of power supply, but is unfavorable for broadband application due to the fact that the design principle depends on wavelength, and is generally large in size and unfavorable for miniaturized design; the switching device has comparable insertion loss with a circulator, better isolation, better frequency bandwidth, and obvious volume advantage, and thus is widely applied to T/R components.
At present, whether a switching device is normally switched or not, whether a switching state is correct or not is mainly judged by comparing the amplitude of the transmitting calibration (receiving calibration) of the radar with the phase calibration value, but the amplitude and the phase calibration value can be influenced by a T/R component, an antenna and the like, so that the working state of the switch can not be accurately judged by comparing the amplitude and the phase calibration value.
Disclosure of Invention
The invention aims to provide a dual-polarization array radar, a PIN tube SPDT switching device and a method thereof, which are used for solving the problem that the traditional method cannot accurately judge the working state of a switch.
The invention solves the technical problems by the following technical scheme: a PIN pipe SPDT switching device with a state self-checking function comprises a control module, a first driving module, a second driving module, an acquisition module and a PIN pipe SPDT switching module;
the control module is connected with the first driving module, the second driving module and the acquisition module; the first driving module is connected with the first end of the PIN pipe SPDT switch module through a resistor R1, and the second driving module is connected with the second end of the PIN pipe SPDT switch module through a resistor R2; the third end of the PIN pipe SPDT switch module is connected with the T/R component, and the fourth end and the fifth end of the PIN pipe SPDT switch module are connected with the antenna;
the acquisition module is used for acquiring voltages at two ends of the resistor R1 and acquiring voltages at two ends of the resistor R2; the control module is used for generating a voltage driving signal and judging the working state of the PIN pipe SPDT switch module according to the voltages at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2; the first driving module is used for outputting a first voltage bias signal according to the voltage driving signal, and the second driving module is used for outputting a second voltage bias signal according to the voltage driving signal, so that the PIN tube SPDT switch module is in different working states under the driving of the first voltage bias signal and the second voltage bias signal.
According to the invention, the voltage at two ends of the resistor at the output end of the driving module is directly obtained through the acquisition module, the on or off state of the diode in the PIN tube SPDT switch module is judged according to the voltage at two ends of the resistor, and then the working state of the PIN tube SPDT switch module is judged according to the on or off state of the diode, so that the self-checking of the working state is realized.
Furthermore, the PIN tube SPDT switch module adopts a parallel structure and comprises capacitors C1-C7, inductors L1-L2 and diodes D1-D2; the first end of the capacitor C6 and the first end of the inductor L1 are respectively connected with the second end of the resistor R1, the second end of the capacitor C6 is grounded, and the second end of the inductor L1 is connected with the first end of the capacitor C1, the anode of the diode D1 and the first end of the capacitor C2; the second end of the capacitor C1 is used as the fourth end of the PIN tube SPDT switch module, the cathode of the diode D1 is grounded, and the second end of the capacitor C2 is connected with the first end of the capacitor C3 and the first end of the capacitor C4; the second end of the capacitor C3 is used as a third end of the PIN tube SPDT switch module to be connected with the T/R component, and the second end of the capacitor C4 is connected with the anode of the diode D2, the first end of the capacitor C5 and the first end of the inductor L2; the negative electrode of the diode D2 is grounded, the second end of the capacitor C5 is used as the fifth end of the PIN tube SPDT switch module, the second end of the inductor L2 is connected with the second end of the resistor R2 and the first end of the capacitor C7, and the second end of the capacitor C7 is grounded;
the distance between the positive electrode of the diode D1 and the first end of the capacitor C2, and the distance between the positive electrode of the diode D2 and the second end of the capacitor C4 are all quarter wavelengths.
In order to provide higher isolation in a wide frequency band range and stronger power processing capacity, the PIN tube SPDT switch module adopts a parallel structure.
Further, the first driving module and the second driving module both use a driver chip with the model of UCC23511 as a core, a cathode of the driver chip is connected with a drain electrode of an MOS tube through a resistor, and a grid electrode of the MOS tube is connected with the control module.
Further, the acquisition module takes an ADC chip with the model of AD7656 as a core.
Based on the same conception, the invention also provides a state self-checking method of the PIN pipe SPDT switching device, which comprises the following steps:
the control module generates a voltage driving signal;
the first driving module outputs a first voltage bias signal according to the voltage driving signal, and the second driving module outputs a second voltage bias signal according to the voltage driving signal; the PIN pipe SPDT switch modules are in different working states under the drive of the first voltage bias signal and the second voltage bias signal;
the acquisition module acquires voltages at two ends of the resistor R1 and acquires voltages at two ends of the resistor R2; and the control module judges the working state of the PIN pipe SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2.
Further, under the driving of the first voltage bias signal and the second voltage bias signal, the PIN tube SPDT switch module is in different working states, and specifically includes:
when the first voltage bias signal and the second voltage bias signal are forward bias, the diode D1 and the diode D2 of the PIN pipe SPDT switch module are in a conducting state, and the input radio frequency signals of the T/R assembly do not pass through the fourth end and the fifth end of the PIN pipe SPDT switch module;
when the first voltage bias signal and the second voltage bias signal are both negatively biased, the diode D1 and the diode D2 of the PIN pipe SPDT switch module are both in a cut-off state, and the input radio frequency signals of the T/R assembly pass through the fourth end and the fifth end of the PIN pipe SPDT switch module;
when the first voltage bias signal is positively biased and the second voltage bias signal is negatively biased, a diode D1 of the PIN pipe SPDT switch module is in a conducting state and a diode D2 of the PIN pipe SPDT switch module is in a cutting-off state, and an input radio-frequency signal of the T/R assembly does not pass through a fourth end of the PIN pipe SPDT switch module and passes through a fifth end of the PIN pipe SPDT switch module;
when the first voltage bias signal is negatively biased and the second voltage bias signal is positively biased, the diode D1 of the PIN pipe SPDT switch module is in an off state and the diode D2 is in an on state, and an input radio frequency signal of the T/R assembly passes through the fourth end of the PIN pipe SPDT switch module and does not pass through the fifth end of the PIN pipe SPDT switch module.
Further, the control module judges the working state of the PIN tube SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2, and specifically comprises:
the control module judges that the diode D1 is in an on or off state according to the voltages at the two ends of the resistor R1, and judges that the diode D2 is in the on or off state according to the voltages at the two ends of the resistor R2;
and judging the working state of the PIN pipe SPDT switch module according to the on or off state of the diode D1 and the on or off state of the diode D2.
Further, when the voltage at the second end of the resistor R1 is equal to the conduction voltage drop of the diode D1, the diode D1 is in a conduction state; when the voltage at the first end of the resistor R1 is equal to the voltage at the second end of the resistor R1 and is equal to the negative voltage bias signal, the diode D1 is in a cut-off state;
when the voltage at the second end of the resistor R2 is equal to the conduction voltage drop of the diode D2, the diode D2 is in a conduction state; when the voltage at the first end of the resistor R2 is equal to the voltage at the second end of the resistor R2 and is equal to the negative voltage bias signal, the diode D2 is in a cut-off state; the second end of the resistor R1 and the second end of the resistor R2 are both one ends close to the PIN pipe SPDT switch module;
when the diodes D1 and D2 are in a conducting state, the input radio frequency signals of the T/R assembly do not pass through the fourth end and the fifth end of the PIN pipe SPDT switch module; when the diodes D1 and D2 are in the cut-off state, the input radio frequency signals of the T/R assembly pass through the fourth end and the fifth end of the PIN pipe SPDT switch module; when the diode D1 is in an on state and the diode D2 is in an off state, an input radio frequency signal of the T/R assembly does not pass through the fourth end and the fifth end of the PIN pipe SPDT switch module; when the diode D1 is in an off state and the diode D2 is in an on state, the input radio frequency signal of the T/R component passes through the fourth end of the PIN tube SPDT switch module and does not pass through the fifth end.
Further, the method further includes that the control module judges the damage condition of the diode in the PIN tube SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2, and specifically includes:
when the voltage at the first end of the resistor R1 is equal to the voltage at the second end of the resistor R1 and is equal to the forward voltage bias signal, the diode D1 is blown; when the voltage at the second end of the resistor R1 is equal to 0, the diode D1 is short-circuited;
when the voltage at the first end of the resistor R2 is equal to the voltage at the second end of the resistor R2 and is equal to the forward voltage bias signal, the diode D2 is blown; when the voltage at the second end of the resistor R2 is equal to 0, the diode D2 is short-circuited.
Based on the same conception, the invention also provides a double-polarization array radar which comprises the PIN tube SPDT switching device.
Advantageous effects
Compared with the prior art, the invention has the advantages that:
according to the PIN pipe SPDT switching device provided by the invention, the voltage at the two ends of the resistor at the output end of the driving module is directly obtained through the acquisition module, the on or off state of the diode in the PIN pipe SPDT switching module is judged according to the voltage at the two ends of the resistor, the working state of the PIN pipe SPDT switching module is further judged according to the on or off state of the diode, the self-checking of the working state is realized, and meanwhile, whether the diode is damaged or not can be detected according to the voltage at the two ends of the resistor.
The state self-checking method is not influenced by factors such as the T/R assembly and the antenna, can accurately perform the state self-checking, greatly improves the accuracy of state detection, does not need to additionally build a test platform in the state self-checking process, and is beneficial to the checking of the switch state and the problem positioning.
Drawings
In order to more clearly illustrate the technical solutions of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawing in the description below is only one embodiment of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic circuit diagram of a PIN tube SPDT switching device in an embodiment of the present invention;
FIG. 2 is a schematic circuit diagram of a first driver module according to an embodiment of the invention;
FIG. 3 is a schematic circuit diagram of a second driver module according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a parallel structure circuit of a PIN tube SPDT switch module in an embodiment of the present invention;
FIG. 5 is a schematic diagram of a series configuration of PIN tube SPDT switch modules in an embodiment of the present invention;
FIG. 6 is a schematic diagram of a series-parallel hybrid circuit of a PIN tube SPDT switch module in an embodiment of the present invention;
fig. 7 is a schematic circuit diagram of an acquisition module in an embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made more apparent and fully by reference to the accompanying drawings, in which it is shown, however, only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme of the present application is described in detail below with specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
As shown in fig. 1, the PIN tube SPDT switch device with the status self-checking function provided by the embodiment of the present invention is applied to a dual-polarization array radar, and the device comprises a control module, a first driving module, a second driving module, an acquisition module and a PIN tube SPDT switch module; the control module is connected with the first driving module, the second driving module and the acquisition module; the first driving module is connected with the first end of the PIN pipe SPDT switch module through a resistor R1, and the second driving module is connected with the second end of the PIN pipe SPDT switch module through a resistor R2; and the third end of the PIN pipe SPDT switch module is connected with the T/R component, and the fourth end and the fifth end of the PIN pipe SPDT switch module are connected with the antenna.
In this embodiment, the Control module adopts an MCU (i.e., a micro Control unit), and the MCU generates a voltage driving signal (including a first voltage driving signal Control1 and a second voltage driving signal Control 2), and determines the on or off state of the diode in the PIN SPDT switch module according to the voltages at two ends of the resistor R1 (i.e., the voltages collected by the ADC1 and the ADC 2) and the voltages at two ends of the resistor R2 (i.e., the voltages collected by the ADC3 and the ADC 4) collected by the collection module, thereby determining the working state of the PIN SPDT switch module. The control module can also judge the damage condition of the diode in the PIN pipe SPDT switch module according to the voltages at two ends of the resistor R1 (namely the voltages collected by the ADC1 and the ADC 2) and the voltages at two ends of the resistor R2 (namely the voltages collected by the ADC3 and the ADC 4) collected by the collection module.
The working state of the PIN tube SPDT switch module comprises that the input radio frequency signals of the T/R component are all output to the antenna through the fourth end (i.e. RFout 1) and the fifth end (i.e. RFout 2) of the PIN tube SPDT switch module, the input radio frequency signals of the T/R component are not output to the antenna through the fourth end (i.e. RFout 1) and the fifth end (i.e. RFout 2) of the PIN tube SPDT switch module, the input radio frequency signals of the T/R component are output to the antenna through the fourth end (i.e. RFout 1) and not output to the antenna through the fifth end (i.e. RFout 2) of the PIN tube SPDT switch module, and the input radio frequency signals of the T/R component are not output to the antenna through the fourth end (i.e. RFout 1) and output to the antenna through the fifth end (i.e. RFout 2) of the PIN tube SPDT switch module.
The first driving module and the second driving module output voltage bias signals under the action of voltage driving signals generated by the control module to drive diodes in the PIN tube SPDT switch module to be turned on or turned off. As shown in fig. 2 and fig. 3, the first driving module and the second driving module both use a driver chip with the model of UCC23511 as a core, the CATHODE of the driver chip is connected with the drain electrode of the MOS transistor through a resistor, and the gate electrode of the MOS transistor is connected with the control module.
In fig. 2, a cathode of a driver chip U1 of the first driving module is connected with a drain electrode of a MOS transistor M1 through a resistor R4, a gate electrode of the MOS transistor M1 is connected with the Control module, the first driving module is controlled by a first voltage driving signal Control1 generated by the Control module, VCC is positive voltage, VEE is negative voltage, and an upper MOS transistor or a lower MOS transistor at an output end of the driver chip U1 of the first driving module is driven to be conducted by the first voltage driving signal Control1, so that a first voltage BIAS signal BIAS1 output by the driver chip U1 is VCC (i.e., positive voltage BIAS signal) or VEE (i.e., negative voltage BIAS signal).
In fig. 3, a cathode of a driver chip U2 of the second driving module is connected with a drain electrode of a MOS transistor M2 through a resistor R6, a gate electrode of the MOS transistor M2 is connected with the Control module, the second driving module is controlled by a second voltage driving signal Control2 generated by the Control module, VCC is positive voltage, VEE is negative voltage, and an upper MOS transistor or a lower MOS transistor at an output end of the driver chip U2 of the second driving module is driven to be conducted by the second voltage driving signal Control2, so that a second voltage BIAS signal BIAS2 output by the driver chip U2 is VCC (i.e., positive voltage BIAS signal) or VEE (i.e., negative voltage BIAS signal).
The PIN pipe SPDT switch module can adopt a parallel structure, a serial structure and a serial-parallel hybrid structure, and the parallel structure can provide higher isolation in a wide frequency band range and has stronger power processing capability. The PIN tube SPDT switch module of this embodiment adopts the parallel structure. As shown in FIG. 4, the PIN tube SPDT switch module comprises capacitors C1-C7, inductors L1-L2 and diodes D1-D2; the first end of the capacitor C6 and the first end of the inductor L1 are respectively connected with the resistor R1, the second end of the capacitor C6 is grounded, and the second end of the inductor L1 is connected with the first end of the capacitor C1, the anode of the diode D1 and the first end of the capacitor C2; the second end of the capacitor C1 is used as the fourth end of the PIN tube SPDT switch module, the cathode of the diode D1 is grounded, and the second end of the capacitor C2 is connected with the first end of the capacitor C3 and the first end of the capacitor C4; the second end of the capacitor C3 is connected with the T/R component, and the second end of the capacitor C4 is connected with the anode of the diode D2, the first end of the capacitor C5 and the first end of the inductor L2; the negative electrode of the diode D2 is grounded, the second end of the capacitor C5 is used as the fifth end of the PIN tube SPDT switch module, the second end of the inductor L2 is connected with the resistor R2 and the first end of the capacitor C7, and the second end of the capacitor C7 is grounded. The first end of the capacitor C6 and the first end of the inductor L1 are used as the first end of the PIN pipe SPDT switch module, the second end of the inductor L2 and the first end of the capacitor C7 are used as the second end of the PIN pipe SPDT switch module, and the second end of the capacitor C3 is used as the third end of the PIN pipe SPDT switch module.
The distance between the anode of diode D1 and the first terminal of capacitor C2 (i.e., ab), and the distance between the anode of diode D2 and the second terminal of capacitor C4 (i.e., cd) are all one quarter wavelength.
In the PIN pipe SPDT switch module, capacitors C1-C5 play a role in blocking, inductors L1 and L2 play a role in high-frequency choke, microwave signals are high-resistance devices, microwave signal leakage is restrained, direct current is low-resistance devices, resistors R1 and R2 control voltage division, current of a direct current loop is adjusted, capacitors C6 and C7 play a role in filtering protection, and microwave signals leaked from fourth ends RFout1 and fifth ends RFout2 bypass to the ground through the capacitors C6 and C7, so that interference to a power supply can be avoided. The switching of the channel signals can be realized by controlling the on and off of the PIN tube through the first voltage BIAS signal BIAS1 and the second voltage BIAS signal BIAS2, so that the switching function is realized. The PIN pipe SPDT switch module has four switch states specifically:
(1) When the first voltage BIAS signal BIAS1 and the second voltage BIAS signal BIAS2 are both forward BIAS VCC, the diode D1 and the diode D2 of the PIN tube SPDT switch module are both in a conducting state, the diode D1 and the diode D2 are shorted to the ground, and the input impedance of the diode D1 is transformed to the capacitor C2 through the quarter wavelength and the input impedance of the diode D2 is transformed to the capacitor C4 through the quarter wavelength because the distances ab and cd between the diode D1 and the capacitor C2 and between the diode D2 and the capacitor C4 are all the quarter wavelength, and the input radio frequency signal of the T/R assembly is not passed through the fourth end RFout1 and the fifth end RFout2 of the PIN tube SPDT switch module, i.e., the input radio frequency signal is not passed through the fourth end RFout1 and the fifth end RFout2.
(2) When the first voltage BIAS signal BIAS1 and the second voltage BIAS signal BIAS2 are both negative BIAS VEE, the diode D1 and the diode D2 of the PIN tube SPDT switch module are both in the off state, the diode D1 and the diode D2 are in the high-resistance state, the passing signals of the fourth end RFout1 and the fifth end RFout2 are not affected, and the input radio frequency signals of the T/R assembly are output to the antenna through the fourth end RFout1 and the fifth end RFout2 of the PIN tube SPDT switch module.
(3) When the first voltage BIAS signal BIAS1 is positive BIAS VCC and the second voltage BIAS signal BIAS2 is negative BIAS VEE, the diode D1 of the PIN tube SPDT switch module is in an on state, the diode D2 is in an off state, the diode D1 is shorted to ground, the fourth terminal RFout1 does not pass through the input radio frequency signal, the diode D2 is in a high-resistance state, and the input impedance of the diode D1 is just in a high-resistance state at the capacitor C2 after the input impedance of the diode D1 is transformed to the high-resistance state after the input radio frequency signal passes through the fifth terminal RFout2.
(4) When the first voltage BIAS signal BIAS1 is a negative BIAS VEE and the second voltage BIAS signal BIAS2 is a positive BIAS VCC, the diode D1 of the PIN SPDT switch module is in an off state and the diode D2 is in an on state, and the input radio frequency signal of the T/R component passes through the fourth end RFout1 of the PIN SPDT switch module and does not pass through the fifth end RFout2 of the PIN SPDT switch module.
The PIN pipe SPDT switch module can also adopt a series structure. As shown in FIG. 5, the PIN tube SPDT switch module comprises capacitors C1, C3, C5, C6 and C7, inductors L1-L3, and diodes D1 and D2; the first end of the capacitor C6 and the first end of the inductor L1 are respectively connected with the second end of the resistor R1, the second end of the capacitor C6 is grounded, and the second end of the inductor L1 is connected with the first end of the capacitor C1 and the anode of the diode D1; the second end of the capacitor C1 is used as a fourth end RFout1 of the PIN tube SPDT switch module, the cathode of the diode D1 is connected with the first end of the capacitor C3, the first end of the inductor L3 and the cathode of the diode D2, the second end of the capacitor C3 is connected with the T/R component, the second end of the inductor L3 is grounded, the anode of the diode D2 is connected with the first end of the inductor L2 and the first end of the capacitor C5, the second end of the capacitor C5 is used as a fifth end RFout2 of the PIN tube SPDT switch module, the second end of the inductor L2 is connected with the first end of the capacitor C7 and the second end of the resistor R2, and the second end of the capacitor C7 is grounded.
The PIN pipe SPDT switch module can also adopt a series-parallel connection mixed structure. As shown in FIG. 6, the PIN tube SPDT switch module comprises capacitors C1, C3, C5, C6, C7, inductors L1-L3, and diodes D1-D4; the first end of the capacitor C6 and the first end of the inductor L1 are respectively connected with the second end of the resistor R1, the second end of the capacitor C6 is grounded, and the second end of the inductor L1 is connected with the first end of the capacitor C1, the cathode of the diode D2 and the anode of the diode D3; the second end of the capacitor C1 is used as the fourth end RFout1 of the PIN pipe SPDT switch module, the cathode of the diode D3 is grounded, the anode of the diode D2 is connected with the first end of the capacitor C3, the first end of the inductor L3 and the anode of the diode D1, the second end of the capacitor C3 is connected with the T/R component, the second end of the inductor L3 is grounded, the cathode of the diode D1 is connected with the first end of the inductor L2, the first end of the capacitor C5 and the anode of the diode D4, the second end of the capacitor C5 is used as the fifth end RFout2 of the PIN pipe SPDT switch module, the cathode of the diode D4 is grounded, the second end of the inductor L2 is connected with the first end of the capacitor C7 and the second end of the resistor R2, and the second end of the capacitor C7 is grounded.
In this embodiment, the acquisition module uses an ADC chip with the model AD7656 as a core, as shown in fig. 7, the ADC chip with the model AD7656 is a true bipolar analog input chip, and three pairs of ADCs independently and synchronously sample, so that the detection of the positive and negative voltage bias signals output by the driving module can be realized. The acquisition module acquires voltages at two ends of the resistor R1, namely a first end voltage (namely a voltage acquired by the ADC1 in the figure 1) and a second end voltage (namely a voltage acquired by the ADC2 in the figure 1) of the resistor R1, wherein the first end voltage of the resistor R1 is equal to the first voltage bias signal. The acquisition module also acquires voltages at two ends of the resistor R2, namely a first end voltage (i.e. a voltage acquired by the ADC3 in fig. 1) and a second end voltage (i.e. a voltage acquired by the ADC4 in fig. 1) of the resistor R2, wherein the first end voltage of the resistor R2 is equal to the second voltage bias signal. The voltage value collected by the collection module is fed back to the control module, the control module judges the on or off state of the diode in the PIN pipe SPDT switch module according to the voltage at two ends of the resistor R1 and the voltage at two ends of the resistor R2 collected by the collection module, and then judges the working state of the PIN pipe SPDT switch module, and the specific judging process is as follows:
when the voltage of the second end of the resistor R1 is equal to the conduction voltage drop of the diode D1, the diode D1 is in a conduction state; when the voltage at the first end of the resistor R1 is equal to the voltage at the second end of the resistor R1 and is equal to the negative voltage bias signal VEE, the diode D1 is in an off state;
when the voltage at the second end of the resistor R2 is equal to the conduction voltage drop of the diode D2, the diode D2 is in a conduction state; when the voltage at the first end of the resistor R2 is equal to the voltage at the second end of the resistor R2 and is equal to the negative voltage bias signal VEE, the diode D2 is in an off state;
when the diodes D1 and D2 are in a conducting state, the input radio frequency signals of the T/R assembly do not pass through the fourth end RFout1 and the fifth end RFout2 of the PIN pipe SPDT switch module; when the diodes D1 and D2 are in the cut-off state, the input radio frequency signals of the T/R assembly pass through the fourth end RFout1 and the fifth end RFout2 of the PIN pipe SPDT switch module; when the diode D1 is in an on state and the diode D2 is in an off state, the input radio frequency signal of the T/R component does not pass through the fourth end RFout1 and the fifth end RFout2 of the PIN pipe SPDT switch module; when the diode D1 is in an off state and the diode D2 is in an on state, the input radio frequency signal of the T/R component passes through the fourth end RFout1 and does not pass through the fifth end RFout2 of the PIN tube SPDT switch module.
When the diode D1 and/or D2 is forward-conducting, since the inductors L1 and L2 are low-resistance devices for direct current, and the forward-conducting voltage drop of the PIN tube depends on the material and process of the PIN tube, and is irrelevant to externally applied voltage in the allowed working environment, the voltage value collected by the ADC2 and/or ADC4 should be equal to the conducting voltage drop of the PIN tube.
The control module can also judge the damage condition of the diode in the PIN pipe SPDT switch module according to the voltages at two ends of the resistor R1 (namely the voltages collected by the ADC1 and the ADC 2) and the voltage at two ends of the resistor R2 (namely the voltages collected by the ADC3 and the ADC 4) collected by the collection module, and specifically comprises the following steps:
when the voltage at the first end of the resistor R1=the voltage at the second end of the resistor R1=the forward voltage bias signal VCC, the diode D1 is blown; when the voltage at the second end of the resistor R1 is equal to 0, the diode D1 is short-circuited;
when the voltage at the first end of the resistor R2=the voltage at the second end of the resistor R2=the forward voltage bias signal, the diode D2 blows; when the voltage at the second end of the resistor R2 is equal to 0, the diode D2 is short-circuited.
The voltage at the first end of the resistor R1 or R2 is equal to the voltage bias signal output by the driving module, when the voltage bias signal is the forward voltage bias signal VCC, the diode should be in a conducting state under normal conditions, the voltage at the second end of the resistor should be equal to the conducting voltage drop of the diode under the conducting state, and when the voltage at the second end of the resistor is not equal to the conducting voltage drop but equal to the voltage at the first end of the resistor R1 or R2, the diode is indicated to be blown. Normally, when the diode is in a conducting state, the voltage of the second end of the resistor should be equal to the conducting voltage drop, and when the voltage of the second end of the resistor is equal to 0, the diode is indicated to be short-circuited.
Based on the same conception, the embodiment of the invention also provides a state self-checking method of the PIN pipe SPDT switching device, which comprises the following steps:
step 1: the Control module generates voltage driving signals Control1 and Control2;
step 2: the first driving module outputs a first voltage BIAS signal BIAS1 according to a voltage driving signal Control1, and the second driving module outputs a second voltage BIAS signal BIAS2 according to a voltage driving signal Control2; under the drive of a first voltage BIAS signal BIAS1 and a second voltage BIAS signal BIAS2, the PIN pipe SPDT switch module is in different working states;
step 3: the acquisition module acquires voltages at two ends of the resistor R1 and acquires voltages at two ends of the resistor R2; the control module judges the working state of the PIN pipe SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2.
In step 1, parameters can be set according to requirements, and the Control module generates voltage driving signals Control1 and Control2 according to the parameters; the control module can also be connected with the radar, and the voltage driving signal is generated by controlling the control module according to the working requirement of the radar.
In step 2, under the driving of the first voltage bias signal and the second voltage bias signal, the PIN tube SPDT switch module is in different working states (four working states), which specifically includes:
when the first voltage BIAS signal BIAS1 and the second voltage BIAS signal BIAS2 are both forward BIAS VCC, the diode D1 and the diode D2 of the PIN tube SPDT switch module are both in a conductive state, and the input radio frequency signal of the T/R component does not pass through the fourth end RFout1 and the fifth end RFout2 of the PIN tube SPDT switch module;
when the first voltage BIAS signal BIAS1 and the second voltage BIAS signal BIAS2 are both negative BIAS VEE, the diode D1 and the diode D2 of the PIN tube SPDT switch module are both in the off state, and the input radio frequency signal of the T/R component passes through the fourth end RFout1 and the fifth end RFout2 of the PIN tube SPDT switch module;
when the first voltage BIAS signal BIAS1 is a positive BIAS VCC and the second voltage BIAS signal BIAS2 is a negative BIAS VEE, the diode D1 of the PIN tube SPDT switch module is in an on state and the diode D2 is in an off state, and the input radio frequency signal of the T/R component does not pass through the fourth end RFout1 of the PIN tube SPDT switch module and passes through the fifth end RFout2 of the PIN tube SPDT switch module;
when the first voltage BIAS signal BIAS1 is a negative BIAS VEE and the second voltage BIAS signal BIAS2 is a positive BIAS VCC, the diode D1 of the PIN SPDT switch module is in an off state and the diode D2 is in an on state, and the input radio frequency signal of the T/R component passes through the fourth end RFout1 of the PIN SPDT switch module and does not pass through the fifth end RFout2 of the PIN SPDT switch module.
In step 3, the control module determines the working state of the PIN tube SPDT switch module according to the voltage at two ends of the resistor R1 and the voltage at two ends of the resistor R2, and specifically includes:
the control module judges that the diode D1 is in an on or off state according to the voltages at the two ends of the resistor R1, and judges that the diode D2 is in an on or off state according to the voltages at the two ends of the resistor R2; and judging the working state of the PIN pipe SPDT switch module according to the on or off state of the diode D1 and the on or off state of the diode D2.
When the voltage of the second end of the resistor R1 is equal to the conduction voltage drop of the diode D1, the diode D1 is in a conduction state; when the voltage at the first end of the resistor R1 is equal to the voltage at the second end of the resistor R1 and is equal to the negative voltage bias signal VEE, the diode D1 is in an off state;
when the voltage at the second end of the resistor R2 is equal to the conduction voltage drop of the diode D2, the diode D2 is in a conduction state; when the voltage at the first end of the resistor R2 is equal to the voltage at the second end of the resistor R2 and is equal to the negative voltage bias signal VEE, the diode D2 is in an off state;
when the diodes D1 and D2 are in a conducting state, the input radio frequency signals of the T/R assembly do not pass through the fourth end RFout1 and the fifth end RFout2 of the PIN pipe SPDT switch module; when the diodes D1 and D2 are in the cut-off state, the input radio frequency signals of the T/R assembly pass through the fourth end RFout1 and the fifth end RFout2 of the PIN pipe SPDT switch module; when the diode D1 is in an on state and the diode D2 is in an off state, the input radio frequency signal of the T/R component does not pass through the fourth end RFout1 and the fifth end RFout2 of the PIN pipe SPDT switch module; when the diode D1 is in an off state and the diode D2 is in an on state, the input radio frequency signal of the T/R component passes through the fourth end RFout1 and does not pass through the fifth end RFout2 of the PIN tube SPDT switch module.
In a specific embodiment of the present invention, the method further includes the control module judging the damage condition of the diode in the PIN tube SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2, specifically including:
when the voltage at the first end of the resistor R1=the voltage at the second end of the resistor R1=the forward voltage bias signal VCC, the diode D1 is blown; when the voltage at the second end of the resistor R1 is equal to 0, the diode D1 is short-circuited;
when the voltage at the first end of the resistor R2=the voltage at the second end of the resistor R2=the forward voltage bias signal, the diode D2 blows; when the voltage at the second end of the resistor R2 is equal to 0, the diode D2 is short-circuited.
The foregoing disclosure is merely illustrative of specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art will readily recognize that changes and modifications are possible within the scope of the present invention.

Claims (10)

1. The PIN pipe SPDT switching device with the state self-checking function is characterized by comprising a control module, a first driving module, a second driving module, an acquisition module and a PIN pipe SPDT switching module;
the control module is connected with the first driving module, the second driving module and the acquisition module; the first driving module is connected with the first end of the PIN pipe SPDT switch module through a resistor R1, and the second driving module is connected with the second end of the PIN pipe SPDT switch module through a resistor R2; the third end of the PIN pipe SPDT switch module is connected with the T/R component, and the fourth end and the fifth end of the PIN pipe SPDT switch module are connected with the antenna;
the acquisition module is used for acquiring voltages at two ends of the resistor R1 and acquiring voltages at two ends of the resistor R2; the control module is used for generating a voltage driving signal and judging the working state of the PIN pipe SPDT switch module according to the voltages at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2; the first driving module is used for outputting a first voltage bias signal according to the voltage driving signal, and the second driving module is used for outputting a second voltage bias signal according to the voltage driving signal, so that the PIN tube SPDT switch module is in different working states under the driving of the first voltage bias signal and the second voltage bias signal.
2. The PIN tube SPDT switch device according to claim 1, wherein: the PIN tube SPDT switch module adopts a parallel structure and comprises capacitors C1-C7, inductors L1-L2 and diodes D1-D2; the first end of the capacitor C6 and the first end of the inductor L1 are respectively connected with the second end of the resistor R1, the second end of the capacitor C6 is grounded, and the second end of the inductor L1 is connected with the first end of the capacitor C1, the anode of the diode D1 and the first end of the capacitor C2; the second end of the capacitor C1 is used as the fourth end of the PIN tube SPDT switch module, the cathode of the diode D1 is grounded, and the second end of the capacitor C2 is connected with the first end of the capacitor C3 and the first end of the capacitor C4; the second end of the capacitor C3 is used as a third end of the PIN tube SPDT switch module to be connected with the T/R component, and the second end of the capacitor C4 is connected with the anode of the diode D2, the first end of the capacitor C5 and the first end of the inductor L2; the negative electrode of the diode D2 is grounded, the second end of the capacitor C5 is used as the fifth end of the PIN tube SPDT switch module, the second end of the inductor L2 is connected with the second end of the resistor R2 and the first end of the capacitor C7, and the second end of the capacitor C7 is grounded;
the distance between the positive electrode of the diode D1 and the first end of the capacitor C2, and the distance between the positive electrode of the diode D2 and the second end of the capacitor C4 are all quarter wavelengths.
3. The PIN tube SPDT switch device according to claim 1, wherein: the first driving module and the second driving module are both characterized in that a driver chip with the model of UCC23511 is used as a core, a cathode of the driver chip is connected with a drain electrode of an MOS tube through a resistor, and a grid electrode of the MOS tube is connected with the control module.
4. The PIN tube SPDT switch device according to claim 1, wherein: the acquisition module takes an ADC chip with the model of AD7656 as a core.
5. A method for self-checking the state of a PIN tube SPDT switch device according to any one of claims 1 to 4, comprising the steps of:
the control module generates a voltage driving signal;
the first driving module outputs a first voltage bias signal according to the voltage driving signal, and the second driving module outputs a second voltage bias signal according to the voltage driving signal; the PIN pipe SPDT switch modules are in different working states under the drive of the first voltage bias signal and the second voltage bias signal;
the acquisition module acquires voltages at two ends of the resistor R1 and acquires voltages at two ends of the resistor R2; and the control module judges the working state of the PIN pipe SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2.
6. The method for self-checking the state of a PIN tube SPDT switch device according to claim 5, wherein the method comprises the steps of: under the drive of the first voltage bias signal and the second voltage bias signal, the PIN pipe SPDT switch module is in different working states, and specifically comprises:
when the first voltage bias signal and the second voltage bias signal are forward bias, the diode D1 and the diode D2 of the PIN pipe SPDT switch module are in a conducting state, and the input radio frequency signals of the T/R assembly do not pass through the fourth end and the fifth end of the PIN pipe SPDT switch module;
when the first voltage bias signal and the second voltage bias signal are both negatively biased, the diode D1 and the diode D2 of the PIN pipe SPDT switch module are both in a cut-off state, and the input radio frequency signals of the T/R assembly pass through the fourth end and the fifth end of the PIN pipe SPDT switch module;
when the first voltage bias signal is positively biased and the second voltage bias signal is negatively biased, a diode D1 of the PIN pipe SPDT switch module is in a conducting state and a diode D2 of the PIN pipe SPDT switch module is in a cutting-off state, and an input radio-frequency signal of the T/R assembly does not pass through a fourth end of the PIN pipe SPDT switch module and passes through a fifth end of the PIN pipe SPDT switch module;
when the first voltage bias signal is negatively biased and the second voltage bias signal is positively biased, the diode D1 of the PIN pipe SPDT switch module is in an off state and the diode D2 is in an on state, and an input radio frequency signal of the T/R assembly passes through the fourth end of the PIN pipe SPDT switch module and does not pass through the fifth end of the PIN pipe SPDT switch module.
7. The method for self-checking the state of a PIN tube SPDT switch device according to claim 5, wherein the method comprises the steps of: the control module judges the working state of the PIN pipe SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2, and specifically comprises the following steps:
the control module judges that the diode D1 is in an on or off state according to the voltages at the two ends of the resistor R1, and judges that the diode D2 is in the on or off state according to the voltages at the two ends of the resistor R2;
and judging the working state of the PIN pipe SPDT switch module according to the on or off state of the diode D1 and the on or off state of the diode D2.
8. The method for self-checking the state of a PIN tube SPDT switch device according to claim 7, wherein: when the voltage of the second end of the resistor R1 is equal to the conduction voltage drop of the diode D1, the diode D1 is in a conduction state; when the voltage at the first end of the resistor R1 is equal to the voltage at the second end of the resistor R1 and is equal to the negative voltage bias signal, the diode D1 is in a cut-off state;
when the voltage at the second end of the resistor R2 is equal to the conduction voltage drop of the diode D2, the diode D2 is in a conduction state; when the voltage at the first end of the resistor R2 is equal to the voltage at the second end of the resistor R2 and is equal to the negative voltage bias signal, the diode D2 is in a cut-off state; the second end of the resistor R1 and the second end of the resistor R2 are both one ends close to the PIN pipe SPDT switch module;
when the diodes D1 and D2 are in a conducting state, the input radio frequency signals of the T/R assembly do not pass through the fourth end and the fifth end of the PIN pipe SPDT switch module; when the diodes D1 and D2 are in the cut-off state, the input radio frequency signals of the T/R assembly pass through the fourth end and the fifth end of the PIN pipe SPDT switch module; when the diode D1 is in an on state and the diode D2 is in an off state, an input radio frequency signal of the T/R assembly does not pass through the fourth end and the fifth end of the PIN pipe SPDT switch module; when the diode D1 is in an off state and the diode D2 is in an on state, the input radio frequency signal of the T/R component passes through the fourth end of the PIN tube SPDT switch module and does not pass through the fifth end.
9. The method for self-checking the state of a PIN tube SPDT switch device according to any one of claims 5 to 8, wherein the method comprises the steps of: the method further comprises the step that the control module judges the damage condition of the diode in the PIN pipe SPDT switch module according to the voltage at the two ends of the resistor R1 and the voltage at the two ends of the resistor R2, and specifically comprises the following steps:
when the voltage at the first end of the resistor R1 is equal to the voltage at the second end of the resistor R1 and is equal to the forward voltage bias signal, the diode D1 is blown; when the voltage at the second end of the resistor R1 is equal to 0, the diode D1 is short-circuited;
when the voltage at the first end of the resistor R2 is equal to the voltage at the second end of the resistor R2 and is equal to the forward voltage bias signal, the diode D2 is blown; when the voltage at the second end of the resistor R2 is equal to 0, the diode D2 is short-circuited.
10. A dual polarized array radar, characterized by: the radar comprises the PIN pipe SPDT switching device according to any one of claims 1-4.
CN202310538757.5A 2023-05-15 2023-05-15 Dual-polarization array radar and PIN tube SPDT switching device and method thereof Active CN116256707B (en)

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