CN101666833B - CMOS difference radio-frequency signal amplitude detection circuit - Google Patents
CMOS difference radio-frequency signal amplitude detection circuit Download PDFInfo
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- CN101666833B CN101666833B CN2009101771829A CN200910177182A CN101666833B CN 101666833 B CN101666833 B CN 101666833B CN 2009101771829 A CN2009101771829 A CN 2009101771829A CN 200910177182 A CN200910177182 A CN 200910177182A CN 101666833 B CN101666833 B CN 101666833B
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Abstract
The invention discloses a CMOS difference radio-frequency signal amplitude detection circuit, being composed of MOS transistors from M1 to Mn which work under the weak inversion polarization and a filter resistance R0 and a capacitance C0; the MOS transistors from M1 to Mn are serially connected, and the polarization is provided by a current source I1, the grids or drains of the transistors from M1 to Mn are respectively connected with the input positive end Rfin+ of a radio-frequency signal or the input negative end Rfin- of the radio-frequency signal through the capacitances from C1 to Cn, and an amplitude detection result is output by the filter resistance R0 and the capacitance C0, the current change of the MOS transistors under the weak inversion polarization submits to index property, and higher amplitude detection gain is obtained compared with square frequency characteristics, particularly for the weak signal detection, the gain is obvious, and the power consumption is low and is approximate to zero consumption; a plurality of the MOS transistors are serially connected to lead amplitude detection output of each MOS transistor to be serially added, thereby obtaining n times of detection gain; meanwhile, input impedances of radio-frequency inputs of all MOS transistors are connected in parallel, the whole input impedance value is reduced by n times, the requirements of Q value that a high-frequency signal is input to a matching circuit is reduced, so as to realize to be directly connected with a radio-frequency antenna; the differential signal input is adopted, so as to be easy for chip integration and reduce the requirements of chip encapsulation. The circuit is particularly suitable for being applied to wake-up signal detection in a short range communication system and weak radio-frequency signal detection in an RFID system.
Description
Affiliated technical field
The present invention relates to a kind of radio-frequency signal amplitude detection circuit of realizing based on CMOS, relate to especially that wake-up signal in the special-purpose microwave short-range communication detects and rfid system in weak radio-frequency signal detection.
Background technology
Special-purpose short distance communication (Dedicated Short Range Communication is called for short DSRC) technology mainly realizes based on radio communication, is used for fields such as electric non-stop toll (ETC), automatic vehicle identification.The receiving end that moves through the detection to RF signal strength, makes it wake the entering communications status up, and the radio frequency signal amplitude is carried out demodulation usually.The communications band of China DSRC is 5.8GHz, and vehicle electronics label (On Board Unit is called for short OBU) and road measuring device (Road Side Unit is called for short RSU) are exactly to work in this way.
Cmos circuit is used for signal amplitude detection, owing to be subject to high threshold voltage, high input impedance and big stray capacitance, so can only be used for the detection and the amplitude detection of low frequency large-signal usually.In existing solution, be through microwave Schottky detector diode the amplitude of 5.8Ghz radiofrequency signal to be detected to realize.Require this microwave Schottky detector diode to have low threshold voltage, low input impedance and low parasitic capacitance, these are exactly disagreed with the CMOS process characteristic.
Summary of the invention
The object of the present invention is to provide a kind of radio-frequency signal amplitude detection circuit of realizing based on CMOS, when realizing to high frequency weak signal amplitude detection, be easy to chip integrated, reduce cost, be easy to a large amount of productions.
The technical scheme of CMOS difference radio-frequency signal amplitude detection circuit of the present invention is: comprises by the MOS transistor M1, the M2 that are operated under the weak transoid biasing ... Mn and filter resistance R0 and capacitor C 0 are formed.Said MOS transistor M1, M2; Mn; Be connected in series, biasing be provided, said transistor M1, M2 by said current source I1; Mn grid or leak level respectively through said capacitor C 1, C2 ... Cn links to each other with said radiofrequency signal input anode Rfin+ or said radiofrequency signal input negative terminal Rfin-; Odd-numbered electric capacity links to each other with said radiofrequency signal input anode Rfin+, and even-numbered electric capacity links to each other with said radiofrequency signal input anode Rfin-, and amplitude detection result is through said filter resistance R0 and capacitor C 0 output.
The present invention has following advantage:
(1) MOS transistor is operated in the setover electric current in following time of weak transoid and changes and obey indicial response among the present invention, obtains higher amplitude detection gain than square law characteristic, and is especially when Detection of Weak Signals, more obvious, simultaneously the very low zero-power that is bordering on of required power consumption;
(2) adopt a plurality of MOS transistor series connection to make the amplitude detection of each MOS transistor export the series connection addition, thereby obtain n detection gain doubly;
(3) a plurality of MOS transistor series connection are parallelly connected for the input impedance of each MOS transistor of radio frequency input simultaneously, and whole input impedance value has reduced n doubly, has reduced the requirement of high-frequency signal input matching circuit Q value, can realize directly joining with radio-frequency antenna;
(4) adopt the differential signal input, be easy to the integrated of chip and reduce requirements of chip encapsulation;
(5) CMOS is integrated whole radio-frequency signal amplitude detection circuits have reduced cost, are easy to a large amount of production and debugging.
Description of drawings
Fig. 1 subthreshold value MOS transistor amplitude detection circuit figure: (a) be single-ended input, (b) be the difference input
The circuit diagram of the CMOS difference radio-frequency signal amplitude detection circuit that Fig. 2 N type of the present invention MOS transistor is realized
The circuit diagram of the CMOS difference radio-frequency signal amplitude detection circuit that Fig. 3 P type of the present invention MOS transistor is realized
The circuit diagram of the CMOS difference radio-frequency signal amplitude detection circuit that Fig. 4 N type of the present invention and P type MOS transistor are realized
Fig. 5 the present invention improves the circuit diagram of symmetric CMOS difference radio-frequency signal amplitude detection circuit on Fig. 2 basis
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Shown in Fig. 1 (a), MOS transistor M1 provides biasing by current source I1, and the Rfin radiofrequency signal is via the single-ended input of C1.Filter resistance R0 and capacitor C 0 filter radiofrequency signal and obtain DC component Vout.When M1 was operated in the strong inversion state, electric current became the relation of square law with voltage, was formula (1):
I1＝K*(Vin*sin(wt)+Vout-Vth)
2 (1)
Because I1 is invariable, the relation that can obtain Δ Vout variation and Rfin radiofrequency signal amplitude Vin is formula (2):
ΔVout＝Vin
2/[4*(Vout-Vth)] (2)
When M1 was operated in weak anti-type state, electric current and voltage exponent function relation were formula (3):
I1＝I0*exp{[Vin*sin(wt)+Vout-Vth]*q/nKT}?(3)
Same because I1 is invariable, the relation that can obtain Δ Vout variation and Rfin radiofrequency signal amplitude Vin is formula (4):
ΔVout＝Vin
2/[4*nKT/q] (4)
Usually when Vout-Vth＞nKT/q, M1 promptly has been operated in the strong inversion state, so can be known by formula (3), (4), the gain of the amplitude detection of M1 is greater than the gain that is operated in the strong inversion state under weak anti-type state; And this gain is a steady state value, so under very little bias current I1, M1 still has measuring ability to the radio frequency signal amplitude.At this moment electric current can be a microampere order.But consider the requirement of system to noise, what I1 can not be unlimited is little.Noise can be calculated by formula (5):
Vn
2＝4KT/gm (V
2/Hz) ?(5)
Gm=I1/ in the formula (nKT/q).
On the basis of Fig. 1 (a), adopt the difference input, shown in Fig. 1 (b), MOS transistor M1, the M2 series connection, I1 provides biasing by current source, and Rfin+ and Rfin-radiofrequency signal are respectively via C1 and C2 input.Filter resistance R0 and capacitor C 0 filter radiofrequency signal and obtain DC component Vout.Figure b compares figure a, owing to introduced the difference input, it is big one times to be equivalent to Vin, can be known by formula (4), and the amplitude detection gain is also corresponding big 4 times.
Fig. 2 is the circuit diagram of the CMOS difference radio-frequency signal amplitude detection circuit of N type MOS transistor realization of the present invention.Comprise by the N type MOS transistor M1, the M2 that are operated under the weak transoid biasing ... Mn, and filter resistance R0 and capacitor C 0 composition.A plurality of N type MOS transistor M1, M2 ... Mn is connected in series, and I1 provides biasing by current source, and amplitude detection result is through filter resistance R0 and capacitor C 0 output.Owing to adopt a plurality of MOS transistor series connection to make the amplitude detection of each MOS transistor export the series connection addition, thereby obtain n detection gain doubly.While transistor M1, M2; Mn grid or leakage level are respectively through capacitor C 1, C2 ... Cn intersects with radiofrequency signal input anode Rfin+ or radiofrequency signal input negative terminal Rfin-and links to each other; Input impedance for each MOS transistor of radio frequency input is parallelly connected; Whole input impedance value has reduced n doubly, and the coupling that is beneficial to the radio frequency input realizes.
Fig. 3 is the circuit diagram of the CMOS difference radio-frequency signal amplitude detection circuit of P type MOS transistor realization of the present invention.By a plurality of P type MOS transistor M1, M2 ... Mn is connected in series, and I1 provides biasing by current source, and amplitude detection result is through filter resistance R0 and capacitor C 0 output.Because the grid of nethermost P type metal-oxide-semiconductor, leakage level link to each other with ground, need serial connection one resistance between grid and ground, radio frequency input and ground are kept apart.The input of radiofrequency signal is identical with Fig. 2 structure.
Fig. 4 is the circuit diagram that N type of the present invention and P type MOS transistor mix the CMOS difference radio-frequency signal amplitude detection circuit of realizing.The series sequence of N type and P type MOS transistor does not have fixedly requirement.If the grid of nethermost P type metal-oxide-semiconductor, leak level and link to each other with ground, need serial connection one resistance between grid and ground, radio frequency input and ground are kept apart.
Fig. 5 the present invention improves the circuit diagram of symmetric CMOS difference radio-frequency signal amplitude detection circuit on Fig. 2 basis.Introduced MOS transistor M11, M21 ... Mn1, current source I11, filter resistance R01 and capacitor C 11, C21 ... Cn1.They and MOS transistor M1, M2 ... Mn, current source I1, filter resistance R0 and capacitor C 1, C2 ... Cn is symmetry fully, is opposite but link to each other in proper order with radiofrequency signal input anode Rfin+ with radiofrequency signal input negative terminal Rfin-.The input impedance that has guaranteed radiofrequency signal input anode Rfin+ and radiofrequency signal input negative terminal Rfin-like this is identical, and the working method of entire circuit is a fully differential.Differential configuration is easier to the integrated of chip and and reduces requirements of chip encapsulation greatly.
Claims (7)
1. CMOS difference radio-frequency signal amplitude detection circuit is characterized in that: MOS transistor M1, M2 ..., Mn is connected in series, and I1 provides biasing by current source;
Said MOS transistor M1, M2 ..., the quantity of Mn is that n is more than or equal to 2;
Said MOS transistor M1, M2 ..., Mn can be N type metal-oxide-semiconductor or P type metal-oxide-semiconductor, also can be respectively N type and P type metal-oxide-semiconductor; The grid and the drain electrode of MOS transistor connect, and constitute the biasing conducting state; When the drain electrode of P type metal-oxide-semiconductor links to each other with ground, need its grid to be connected in series a resistance and drain electrode is joined.
2. CMOS difference radio-frequency signal amplitude detection circuit according to claim 1 is characterized in that: said MOS transistor M1, and M2 ..., Mn is connected in series, and by said current source I1 biasing is provided, and is operated in weak anti-type state.
3. CMOS difference radio-frequency signal amplitude detection circuit according to claim 2; It is characterized in that: said transistor M1; M2 ..., Mn grid or drain electrode respectively through capacitor C 1, C2 ... Cn links to each other with radiofrequency signal input anode Rfin+ or radiofrequency signal input negative terminal Rfin-; Odd-numbered electric capacity selects said radiofrequency signal input anode Rfin+ coupled with one of negative terminal Rfin-, and even-numbered electric capacity is then selected said radiofrequency signal to import among anode Rfin+ and the negative terminal Rfin-another to link to each other.
4. according to the described CMOS difference radio-frequency signal amplitude detection circuit of one of claim 1-3, it is characterized in that: amplitude detection result is through filter resistance R0 and capacitor C 0 output.
5. according to the described CMOS difference radio-frequency signal amplitude detection circuit of one of claim 1-3, it is characterized in that: also comprise MOS transistor M11, M21 ..., Mn1, current source I11, filter resistance R01 and capacitor C 11, C21 ... Cn1; Said MOS transistor M11, M21 ..., Mn1 is connected in series, and by said current source I11 biasing is provided, and is operated in weak anti-type state; Said transistor M11, M21 ..., Mn1 grid or drain electrode respectively through said capacitor C 11, C21 ... Cn1 links to each other with radiofrequency signal input negative terminal Rfin-or radiofrequency signal input anode Rfin+; Its amplitude detection result exports through said filter resistance R01, and links to each other with capacitor C 0, and wherein n is more than or equal to 2.
6. according to the described CMOS difference radio-frequency signal amplitude detection circuit of one of claim 1-3, it is characterized in that: radiofrequency signal input anode Rfin+ and radiofrequency signal input negative terminal Rfin-, can import for difference, also can be single-ended input; During as single-ended input, optional one of which is an input end, other end ground connection.
7. CMOS difference radio-frequency signal amplitude detection circuit according to claim 5 is characterized in that: radiofrequency signal input anode Rfin+ and radiofrequency signal input negative terminal Rfin-, can import for difference, and also can be single-ended input; During as single-ended input, optional one of which is an input end, other end ground connection.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014008569A2 (en) * | 2012-07-13 | 2014-01-16 | Centro Nacional De Tecnologia Eletrônica Avançada - Ceitec S.A | Radio-frequency signal detector circuit for semi-passive rfid tags |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101964666A (en) * | 2010-09-28 | 2011-02-02 | 王树甫 | ETC (Electronic Temperature Controller) transceiver |
| US9255963B2 (en) | 2011-05-09 | 2016-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Built-in self-test circuit for voltage controlled oscillator |
| US8729968B2 (en) * | 2011-05-09 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Built-in self-test circuit for voltage controlled oscillators |
| CN102624407B (en) * | 2012-03-30 | 2014-04-16 | 江苏物联网研究发展中心 | Radio-frequency emission front-end circuit with automatic gain control |
| CN103675474B (en) * | 2013-12-18 | 2016-04-13 | 四川和芯微电子股份有限公司 | Signal amplitude detection circuit |
| CN106887670A (en) * | 2017-02-27 | 2017-06-23 | 天津大学 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
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|---|---|---|---|---|
| US6137367A (en) * | 1998-03-24 | 2000-10-24 | Amcom Communications, Inc. | High power high impedance microwave devices for power applications |
| CN1918786A (en) * | 2004-02-05 | 2007-02-21 | 英飞凌科技股份公司 | Cascode cmos RF power amplifier with isolated trnasistors |
| CN101477147A (en) * | 2008-11-25 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Circuit for detecting radio frequency power |
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2009
- 2009-09-28 CN CN2009101771829A patent/CN101666833B/en not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6137367A (en) * | 1998-03-24 | 2000-10-24 | Amcom Communications, Inc. | High power high impedance microwave devices for power applications |
| CN1918786A (en) * | 2004-02-05 | 2007-02-21 | 英飞凌科技股份公司 | Cascode cmos RF power amplifier with isolated trnasistors |
| CN101477147A (en) * | 2008-11-25 | 2009-07-08 | 锐迪科微电子（上海）有限公司 | Circuit for detecting radio frequency power |
Non-Patent Citations (1)
| Title |
|---|
| JP特开2000-114886A 2000.04.21 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014008569A2 (en) * | 2012-07-13 | 2014-01-16 | Centro Nacional De Tecnologia Eletrônica Avançada - Ceitec S.A | Radio-frequency signal detector circuit for semi-passive rfid tags |
| WO2014008569A3 (en) * | 2012-07-13 | 2014-03-20 | Centro Nacional De Tecnologia Eletrônica Avançada - Ceitec S.A | Radio-frequency signal detector circuit for semi-passive rfid tags |
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