CN114374379A - Single-chip positive-voltage controlled low-control-voltage high-power-capacity single-pole double-throw switch - Google Patents
Single-chip positive-voltage controlled low-control-voltage high-power-capacity single-pole double-throw switch Download PDFInfo
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- H—ELECTRICITY
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- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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Abstract
The invention discloses a single-chip positive-voltage controlled single-pole double-throw switch with low control voltage and high power capacity, which comprises switch stacking modules from one to four, blocking capacitors from C1 to C8 and bias resistors from R1 to R6; the transistor in the radio frequency switch circuit is biased at a fixed voltage through the blocking capacitor and the bias resistor, so that the switch ensures that the junction capacitor from the drain/source to the substrate is not conducted due to forward bias when the switch works with a large signal, the power capacity of the switch is improved, the working frequency band, the insertion loss, the isolation and other indexes of the switch are not influenced, and the circuit is simple in structure, stable in performance and high in integration level.
Description
Technical Field
The invention belongs to the fields of microelectronics, semiconductors, communication technologies and radio frequency switches, and relates to a single-chip positive-voltage controlled single-pole double-throw switch chip with low control voltage and high power capacity.
Background
The radio frequency switch is a circuit for controlling the on-off of radio frequency signals and selecting transmission channels, is an important device in a radio frequency front-end module, and is widely applied to various commercial and military fields such as cellular GSM, point-to-point communication systems, microwave communication, handheld equipment, radar systems, phased arrays, electronic warfare, automatic test equipment and the like. With the rapid development of communication technology, miniaturization, low power consumption and high performance are the development directions of communication equipment and modules. As is known, low power consumption often means low supply voltage, and the control voltage of the rf switch is also reduced. At present, most of control voltages are 3.3V, 2.8V, 2.4V or lower, and the reduction of the control voltage causes the reduction of the power capacity of the radio frequency switch. Therefore, the research on the single-chip positive voltage controlled single-pole double-throw switch with low control voltage and high power capacity has very important value and significance.
Common methods for increasing power capacity are to use a stacked structure, an impedance transformation method, and an optimal control voltage method. The impedance transformation method is generally applicable to narrow bands, the application frequency band of the invention is wide, and the application range of the method is limited. The optimal control voltage method requires an additional voltage conversion circuit to implement, which increases the complexity of the circuit, and once the voltage conversion circuit has a problem, the whole switching function cannot be implemented. The stacked structure can improve the power capacity of the switch, but the number of stacked tubes is too large, which may affect other performances of the switch, such as insertion loss and isolation deterioration, and a narrower operating band.
Disclosure of Invention
In order to solve the technical problems, the invention adopts the technical scheme that:
the invention provides a single-chip positive-voltage controlled single-pole double-throw switch with low control voltage and high power capacity, which comprises switch stacking modules from one to four, blocking capacitors from C1 to C8 and bias resistors from R1 to R6; the source S of the first switch stacked module is connected with a resistor R1, a capacitor C1 and a capacitor C5, the drain D of the first switch stacked module is connected with a capacitor C2, and the gate G of the first switch stacked module is connected with a control voltage A, a resistor R2, a resistor R3 and a resistor R4; a source S of the second switch stacked module is connected with the other end of the resistor R2, the capacitor C3 and the capacitor C7, a drain D of the second switch stacked module is connected with the other end of the capacitor C2 and the capacitor C4, and a gate G of the second switch stacked module is connected with the control voltage B, the other end of the resistor R1, the resistor R5 and the resistor R6; the source S of the third switch stacked module is connected with the other end of the resistor R4 and the capacitor C6, the drain D of the third switch stacked module is connected with the other end of the capacitor C5 and the other end of the resistor R3, and the gate G of the third switch stacked module is connected with the other end of the capacitor C6 and grounded; the source S of the switch stacked module IV is connected with the other end of the resistor R6 and the capacitor C8, the drain D of the switch stacked module IV is connected with the other end of the capacitor C7 and the other end of the resistor R5, and the gate G of the switch stacked module IV is connected with the other end of the capacitor C8 and is grounded; the radio frequency port RFC is connected with the other end of the capacitor C4; the radio frequency port RF1 is connected with the other end of the capacitor C1; the radio frequency port RF2 is connected to the other end of the capacitor C3.
Further, the switch stack module comprises transistors M1-M4, and a bias resistor Rb1～Rb4(ii) a The drain D of the switch stack module is connected to the drain of the transistor M1, the source of the transistor M1 is connected to the drain of the transistor M2, and the gate of the transistor M1 is connected to the bias resistor Rb1Connecting; the source of the transistor M2 is connected to the drain of the transistor M3, and the gate of the transistor M2 is connected to the bias resistor Rb2Connecting; the source of the transistor M3 is connected to the drain of the transistor M4, and the gate of the transistor M3 is connected to the bias resistor Rb3Connecting; the source of the transistor M4 is connected to the source S of the switch stack, the gate of the transistor M4 is connected to the bias resistor Rb4Connecting; grid G and bias resistor R of switch stack moduleb1Bias resistor Rb2Bias resistor Rb3Bias resistor Rb4The other end of the connecting rod is connected.
Further, the transistors M1 to M4 are depletion transistors, and their turn-on and turn-off are determined by a pinch-off voltage Vp and a gate-source voltage Vgs, where the pinch-off voltage Vp is negative, and the turn-on and turn-off of the transistors M1 to M4 are specifically implemented as follows: when Vgs is larger than Vp, the transistor is started; when Vgs is less than or equal to Vp, the transistor is turned off.
The invention improves the traditional series-parallel single-pole double-throw switch adopting a stacked structure, increases blocking capacitors C2, C5, C6, C7 and C8, bias resistors R1, R2, R3, R4, R5 and R6, biases the transistor in the radio frequency switch circuit at a fixed voltage through the blocking capacitors and the bias resistors, and ensures that the junction capacitor of the drain/source to the substrate is not conducted due to forward bias when the switch works with a large signal, thereby improving the power capacity of the switch, and not influencing the working frequency band, insertion loss, isolation and other indexes of the switch.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic diagram of a conventional series-parallel single-pole double-throw switch circuit with a stacked structure.
Fig. 2 is a circuit diagram of a switch stack module.
Fig. 3 is a schematic circuit structure of the present invention.
Fig. 4 is a comparison of simulation results of ip0.1db of the conventional series-parallel type single pole double throw switch using the stacked structure and ip0.1db of the single pole double throw switch of the present invention.
Detailed Description
The present invention is further described in detail below with reference to the attached drawings so that those skilled in the art can implement the invention by referring to the description text.
It will be understood that terms such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.
The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
The invention improves the traditional series-parallel single-pole double-throw switch adopting a stacked structure, the traditional structure is shown in figure 1, the invention adds blocking capacitors C2, C5, C6, C7, C8 and bias resistors R1, R2, R3, R4, R5 and R6, wherein, as shown in figure 3, the source S of the first switch stacked module is connected with a resistor R1, a capacitor C1 and a capacitor C5, the drain D of the first switch stacked module is connected with a capacitor C2, and the gate G of the first switch stacked module is connected with a control voltage A, a resistor R2, a resistor R3 and a resistor R4; a source S of the second switch stacked module is connected with the other end of the resistor R2, the capacitor C3 and the capacitor C7, a drain D of the second switch stacked module is connected with the other end of the capacitor C2 and the capacitor C4, and a gate G of the second switch stacked module is connected with the control voltage B, the other end of the resistor R1, the resistor R5 and the resistor R6; the source S of the third switch stacked module is connected with the other end of the resistor R4 and the capacitor C6, the drain D of the third switch stacked module is connected with the other end of the capacitor C5 and the other end of the resistor R3, and the gate G of the third switch stacked module is connected with the other end of the capacitor C6 and grounded; the source S of the switch stacked module IV is connected with the other end of the resistor R6 and the capacitor C8, the drain D of the switch stacked module IV is connected with the other end of the capacitor C7 and the other end of the resistor R5, and the gate G of the switch stacked module IV is connected with the other end of the capacitor C8 and is grounded; the radio frequency port RFC is connected with the other end of the capacitor C4; the radio frequency port RF1 is connected with the other end of the capacitor C1; the radio frequency port RF2 is connected to the other end of the capacitor C3.
In the embodiment provided by the present invention, as shown in fig. 2, the switch stack module includes transistors M1 to M4, and a bias resistor Rb1～Rb4(ii) a The drain D of the switch stack module is connected to the drain of the transistor M1, the source of the transistor M1 is connected to the drain of the transistor M2, and the gate of the transistor M1 is connected to the bias resistor Rb1Connecting; the source of the transistor M2 is connected to the drain of the transistor M3, and the gate of the transistor M2 is connected to the bias resistor Rb2Connecting; the source of the transistor M3 is connected to the drain of the transistor M4, and the gate of the transistor M3 is connected to the bias resistor Rb3Connecting; the source of the transistor M4 is connected to the source S of the switch stack, the gate of the transistor M4 is connected to the bias resistor Rb4Connecting; grid G and bias resistor R of switch stack moduleb1Bias resistor Rb2Bias resistor Rb3Bias resistor Rb4The other end of the connecting rod is connected.
In the embodiment provided by the present invention, the transistors M1 to M4 are all depletion transistors, the pinch-off voltage Vp is negative, and the on and off of the transistors are determined by the pinch-off voltage Vp and the gate-source voltage Vgs; when Vgs is larger than Vp, the transistor is started; when Vgs is less than or equal to Vp, the transistor is turned off.
In the embodiment of the invention, the bias resistors R1-R6 and the bias resistors R in the first-fourth switch stack modulesb1～Rb4The device is used for providing isolation between direct current and radio frequency and preventing radio frequency signals from leaking.
The DC blocking capacitors C1-C8 are used for providing isolation between DC and RF, and simultaneously ensuring that the DC voltages of the transistors M1-M4 in the first-fourth switch stack modules are operated in a proper range so as to realize normal switching of the transistors.
The working principle is as follows:
if the radio frequency path RFC is to be turned on to RF1, it is necessary to turn on the switch stack module one and the switch stack module four, and turn off the switch stack module two and the switch stack module three.
Taking the control voltage of 2.4V as an example, at this time, the control terminal voltage a is 2.4V, and the control terminal voltage B is 0V, then the gate-source voltage Vgs of the transistors M1-M4 of the first switch stacked module is a positive value, and the transistors of the first switch stacked module are turned on in the forward direction. For the transistors M1-M4 of the second switch stacked module, the gates pass through a bias resistor Rb1～Rb4Is connected with the control end B. At this time, the gate-source voltage of the second transistor switch stacked module is-2.4V, which is much smaller than the pinch-off voltage Vp, and the second switch stacked module is turned off. For the transistors M1-M4 of the third switch stacked module, the gates pass through a bias resistor Rb1～Rb4The source and drain are connected to the control terminal A through bias resistors R3 and R4. At this time, the gate-source voltage of the transistor switch stack module III is-2.4V, which is much smaller than the pinch-off voltage Vp, and the switch stack module III is turned off. Meanwhile, the DC blocking capacitors C5 and C6 are added to the parallel branch, so that the static work of the third switch stacking module is ensured to be normal while DC and radio frequency isolation is provided, and the normal switching of the third switch stacking module is realized. For the transistors M1-M4 of the switch stack module four, the gates thereof pass through a bias resistor Rb1～Rb4The source and drain are connected to the control terminal B through bias resistors R5 and R6. At this time, the gate-source voltage of the transistor switch stacked module four is 0V > Vp (negative value), and the switch stacked module four is turned on. At the same time, the parallel branch is added with DC blocking capacitors C7 and C8And the normal static operation of the switch stacking module IV is ensured while the isolation of direct current and radio frequency is provided, so that the normal switch of the switch stacking module IV is realized.
On the contrary, if the radio frequency path RFC is to be turned on to the RF2, the switch stack module two and the switch stack module three are required to be turned on, and the switch stack module one and the switch stack module four are required to be turned off. At this time, the control terminal voltage a is 0V, the control terminal voltage B is 2.4V, the gate-source voltage Vgs of the transistor M1-M4 of the second switch stacked module is a positive value, and the transistor of the second switch stacked module is turned on in the forward direction. For the transistors M1-M4 of the first switch stacked module, the gates pass through a bias resistor Rb1～Rb4Is connected with the control end A. At this time, the gate-source voltage of the first transistor switch stacked module is-2.4V, which is much smaller than the pinch-off voltage Vp, and the first switch stacked module is turned off. For the transistors M1-M4 of the third switch stacked module, the gates pass through a bias resistor Rb1～Rb4The source and drain are connected to the control terminal A through bias resistors R3 and R4. At this time, the gate-source voltage of the transistor switch stacked module three is 0V > Vp (negative value), and the switch stacked module three is turned on. Meanwhile, the DC blocking capacitors C5 and C6 are added to the parallel branch, so that the static work of the third switch stacking module is ensured to be normal while DC and radio frequency isolation is provided, and the normal switching of the third switch stacking module is realized. For the transistors M1-M4 of the switch stack module four, the gates thereof pass through a bias resistor Rb1～Rb4The source and drain are connected to the control terminal B through bias resistors R5 and R6. At this time, the gate-source voltage of the transistor switch stack module IV is-2.4V, which is much less than the pinch-off voltage Vp, and the switch stack module IV is turned off. Meanwhile, the DC blocking capacitors C7 and C8 are added to the parallel branch, so that the normal static operation of the switch stacking module IV is ensured while the DC and radio frequency isolation is provided, and the normal switching of the switch stacking module IV is realized.
As shown in fig. 4, under the condition that the control voltages are all +2.4V/0V, the simulation results of ip0.1db of the conventional series-parallel single-pole double-throw switch adopting the stacked structure and ip0.1db of the single-pole double-throw switch of the present invention are compared. From simulation results, the switch IP0.1dB is obviously improved (2-3 dB), and the power capacity is increased by nearly 1 time.
The single-pole double-throw switch can be changed into a single-pole triple-throw switch, a single-pole four-throw switch and a single-pole N-throw switch (N is more than or equal to 5). Any one of the embodiments that a dc blocking capacitor and a bias resistor are added to the rf serial branch and the rf parallel branch is regarded as an extension of the present invention.
While embodiments of the invention have been disclosed above, it is not limited to the applications listed in the description and the embodiments. It can be applied to all kinds of fields suitable for the present invention. Additional modifications will readily occur to those skilled in the art. Therefore, the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention as claimed in the appended claims.
Claims (3)
1. A single-chip positive-voltage controlled single-pole double-throw switch with low control voltage and high power capacity is characterized by comprising switch stacking modules from one to four, DC blocking capacitors C1 to C8 and bias resistors R1 to R6; wherein the content of the first and second substances,
the source S of the first switch stacked module is connected with a resistor R1, a capacitor C1 and a capacitor C5, the drain D of the first switch stacked module is connected with a capacitor C2, and the gate G of the first switch stacked module is connected with a control voltage A, a resistor R2, a resistor R3 and a resistor R4;
a source S of the second switch stacked module is connected with the other end of the resistor R2, the capacitor C3 and the capacitor C7, a drain D of the second switch stacked module is connected with the other end of the capacitor C2 and the capacitor C4, and a gate G of the second switch stacked module is connected with the control voltage B, the other end of the resistor R1, the resistor R5 and the resistor R6;
the source S of the third switch stacked module is connected with the other end of the resistor R4 and the capacitor C6, the drain D of the third switch stacked module is connected with the other end of the capacitor C5 and the other end of the resistor R3, and the gate G of the third switch stacked module is connected with the other end of the capacitor C6 and grounded;
the source S of the switch stacked module IV is connected with the other end of the resistor R6 and the capacitor C8, the drain D of the switch stacked module IV is connected with the other end of the capacitor C7 and the other end of the resistor R5, and the gate G of the switch stacked module IV is connected with the other end of the capacitor C8 and is grounded;
the radio frequency port RFC is connected with the other end of the capacitor C4; the radio frequency port RF1 is connected with the other end of the capacitor C1; the radio frequency port RF2 is connected to the other end of the capacitor C3.
2. The monolithic positive voltage controlled low control voltage high power capacity single pole double throw switch of claim 1 wherein the switch stack block comprises transistors M1 through M4, bias resistor Rb1～Rb4；
The drain D of the switch stack module is connected to the drain of the transistor M1, the source of the transistor M1 is connected to the drain of the transistor M2, and the gate of the transistor M1 is connected to the bias resistor Rb1Connecting;
the source of the transistor M2 is connected to the drain of the transistor M3, and the gate of the transistor M2 is connected to the bias resistor Rb2Connecting;
the source of the transistor M3 is connected to the drain of the transistor M4, and the gate of the transistor M3 is connected to the bias resistor Rb3Connecting;
the source of the transistor M4 is connected to the source S of the switch stack, the gate of the transistor M4 is connected to the bias resistor Rb4Connecting;
grid G and bias resistor R of switch stack moduleb1Bias resistor Rb2Bias resistor Rb3Bias resistor Rb4The other end of the connecting rod is connected.
3. The monolithic positive voltage controlled low control voltage high power capacity single pole double throw switch as claimed in claim 2, wherein the transistors M1-M4 are depletion mode transistors, and their turn-on and turn-off are determined by a pinch-off voltage Vp and a gate-source voltage Vgs, wherein the pinch-off voltage Vp is negative, and the transistors M1-M4 are turned on and off in a specific manner:
when Vgs is larger than Vp, the transistor is started;
when Vgs is less than or equal to Vp, the transistor is turned off.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111639765.6A CN114374379A (en) | 2021-12-29 | 2021-12-29 | Single-chip positive-voltage controlled low-control-voltage high-power-capacity single-pole double-throw switch |
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| CN202111639765.6A CN114374379A (en) | 2021-12-29 | 2021-12-29 | Single-chip positive-voltage controlled low-control-voltage high-power-capacity single-pole double-throw switch |
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Cited By (1)
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|---|---|---|---|---|
| CN117767934A (en) * | 2024-02-22 | 2024-03-26 | 苏州悉芯射频微电子有限公司 | Radio frequency switch circuit |
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Application publication date: 20220419 |