CN116254509A - 电子束蒸发法制备MgZnO薄膜 - Google Patents
电子束蒸发法制备MgZnO薄膜 Download PDFInfo
- Publication number
- CN116254509A CN116254509A CN202111498414.8A CN202111498414A CN116254509A CN 116254509 A CN116254509 A CN 116254509A CN 202111498414 A CN202111498414 A CN 202111498414A CN 116254509 A CN116254509 A CN 116254509A
- Authority
- CN
- China
- Prior art keywords
- film
- electron beam
- mgzno
- beam evaporation
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 238000002360 preparation method Methods 0.000 title claims description 5
- 238000005566 electron beam evaporation Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010453 quartz Substances 0.000 claims abstract description 4
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- IUZNJVILEJRNNP-UHFFFAOYSA-N magnesium;oxozinc Chemical compound [Mg].[Zn]=O IUZNJVILEJRNNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000005191 phase separation Methods 0.000 abstract description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 11
- 239000000463 material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000956 alloy Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
本项专利技术旨在提供一种利用电子束蒸发法制备的高组分氧锌镁薄膜的方法，所需要解决的问题是高组分氧锌镁薄膜在生长时出现的相分离现象。本专利技术是由MgZnO薄膜和SiO2衬底构成的。本专利技术具有如下结构：在石英衬底表面1沉积300nm厚的MgZnO薄膜2。
Description
技术领域
本发明属于半导体薄膜生长领域，涉及采用电子束沉积的一种方法。
背景技术
随着宽禁带半导体材料的研究进展，人们开始考虑利用宽带隙半导体的研制对可见光响应极小的固体紫外光电探测器器件。近二十来，以GaN和ZnO为代表的III-VI族与II-VI族半导体薄膜材料的研究取得了极大的进步，并且得到人们越来越多的关注。随着材料制备技术的不断进步，采用分子束外延(MBE)和金属有机物汽相外延(MOVPE)等方法已经可以制备出高质量的单晶GaN和ZnO及其合金薄膜材料，这为制备高性能的固体紫外光探测器开辟了新的方向。宽带隙II-VI族半导体ZnO及其合金材料MgZnO是继GaN之后的又一种理想紫外光电材料，与GaN相比，ZnO基材料的热稳定性，晶格匹配能力更好，具有超强的抗辐射能力，更宽的带隙可调范围，原料丰富，无毒等诸多有点。但是MgZnO紫外探测器的研究，现在仍然存在一些关键性的问题没有解决，由于元素之间的固溶度不同，导致MgZnO合金材料都存在着分相区，为了解决这一问题，我们使用电子束蒸发法制备MgZnO合金薄膜，提升了Mg在MgZnO合金薄膜中的固溶度，有效抑制了MgZnO结构分相问题。
发明内容
本发明的目的是提供一种通过电子束蒸发法制备MgZnO薄膜的方法。通过调节生长参数制备具有六方单一相的50％Mg组分的MgZnO合金薄膜。
附图说明
下面结合附图和具体实施方式对本发明做进一步说明。
图1制备出的MgZnO薄膜示意图(截面)
其中，1为二氧化硅衬底，2为MgZnO薄膜
具体实施方式
为了更清楚地理解本发明，下面详述MgZnO薄膜制备过程。
生长设备：国产电子束蒸发台。
靶材样式：Mg组分为50％的MgZnO陶瓷靶。
器件工艺：首先将石英衬底1洗净之后，之后使用电子束蒸发法将MgZnO薄膜2蒸镀上去。
MgZnO薄膜的制备方法：利用电子束蒸发法制备MgZnO薄膜，其特征在于，使用Mg含量为50％氧锌镁陶瓷靶，利用电子束蒸发法，在二氧化硅衬底1上生长300nm厚度的薄膜2；溅射时设备的本底真空抽至6.0×10-4Pa，电子束流15mA，根据膜厚仪来控制生长速率，当生长300nm后，停止沉积，衬底温度为300℃。
Claims (2)
1.一种电子束沉积法制备氧锌镁薄膜的制备方法，其特征在于有如下结构：在石英衬底1表面覆盖MgZnO薄膜2。
2.根据权利要求1所述，利用电子束沉积制备MgZnO薄膜，其特征在于，使用Mg含量为50％氧锌镁陶瓷靶，利用电子束沉积技术，在石英衬底1上生长300nm厚度的MgZnO薄膜2；沉积时设备的本底真空抽至6.0×10-4Pa，衬底温度为300℃，电子束流为15mA，根据膜厚仪来控制生长速率，当生长300nm厚度之后，停止沉积。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111498414.8A CN116254509A (zh) | 2021-12-10 | 2021-12-10 | 电子束蒸发法制备MgZnO薄膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111498414.8A CN116254509A (zh) | 2021-12-10 | 2021-12-10 | 电子束蒸发法制备MgZnO薄膜 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116254509A true CN116254509A (zh) | 2023-06-13 |
Family
ID=86681176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111498414.8A Pending CN116254509A (zh) | 2021-12-10 | 2021-12-10 | 电子束蒸发法制备MgZnO薄膜 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116254509A (zh) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1500902A (zh) * | 2002-11-15 | 2004-06-02 | 浙江大学 | 立方相、宽禁带MgZnO晶体薄膜的低温制备技术 |
| CN1603870A (zh) * | 2004-11-02 | 2005-04-06 | 浙江大学 | 立方MgZnO晶体薄膜光波导器件及制备工艺 |
| CN101210313A (zh) * | 2006-12-29 | 2008-07-02 | 中国科学院长春光学精密机械与物理研究所 | 一种电子束蒸发生长MgxZn1－xO薄膜的方法 |
| CN102031487A (zh) * | 2010-10-11 | 2011-04-27 | 深圳大学 | 高镁含量六方相MgZnO薄膜及其制备方法 |
| KR101539294B1 (ko) * | 2014-02-03 | 2015-07-24 | 한국해양대학교 산학협력단 | ZnO/MgZnO 활성층 구조의 박막트랜지스터 |
| CN106086796A (zh) * | 2016-06-01 | 2016-11-09 | 深圳大学 | 一种立方结构MgZnO薄膜及其制备方法 |
-
2021
- 2021-12-10 CN CN202111498414.8A patent/CN116254509A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1500902A (zh) * | 2002-11-15 | 2004-06-02 | 浙江大学 | 立方相、宽禁带MgZnO晶体薄膜的低温制备技术 |
| CN1603870A (zh) * | 2004-11-02 | 2005-04-06 | 浙江大学 | 立方MgZnO晶体薄膜光波导器件及制备工艺 |
| CN101210313A (zh) * | 2006-12-29 | 2008-07-02 | 中国科学院长春光学精密机械与物理研究所 | 一种电子束蒸发生长MgxZn1－xO薄膜的方法 |
| CN102031487A (zh) * | 2010-10-11 | 2011-04-27 | 深圳大学 | 高镁含量六方相MgZnO薄膜及其制备方法 |
| KR101539294B1 (ko) * | 2014-02-03 | 2015-07-24 | 한국해양대학교 산학협력단 | ZnO/MgZnO 활성층 구조의 박막트랜지스터 |
| CN106086796A (zh) * | 2016-06-01 | 2016-11-09 | 深圳大学 | 一种立方结构MgZnO薄膜及其制备方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Tanaka et al. | Preparation of Cu2ZnSnS4 thin films by hybrid sputtering | |
| Gomez et al. | Gallium-doped ZnO thin films deposited by chemical spray | |
| Li et al. | Growth of Cu2O thin films with high hole mobility by introducing a low-temperature buffer layer | |
| CN112126897B (zh) | 一种alpha相氧化镓薄膜的制备方法 | |
| Sadigov et al. | Production of CuInSe2 thin films by a sequential processes of evaporations and selenization | |
| Hussain et al. | Applications and synthesis of zinc oxide: an emerging wide bandgap material | |
| WO2020215444A1 (zh) | 氧化镓半导体及其制备方法 | |
| Zhang et al. | Sb2Se3 films fabricated by thermal evaporation and post annealing | |
| CN109056057B (zh) | 一种大尺寸单晶氧化镓纳米片的制备方法 | |
| Chebil et al. | Epitaxial growth of ZnO on quartz substrate by sol-gel spin-coating method | |
| CN112831768A (zh) | 一种高结晶质量的氮化铪薄膜制备方法及应用 | |
| CN111334856A (zh) | 用等离子体辅助分子束外延以准范德华外延生长高质量ZnO单晶薄膜的方法 | |
| Yusof et al. | Fabrication and characterization of copper doped zinc oxide by using Co-sputtering technique | |
| Hong et al. | Selective formation of GaN-based nanorod heterostructures on soda-lime glass substrates by a local heating method | |
| CN116254509A (zh) | 电子束蒸发法制备MgZnO薄膜 | |
| CN104593772B (zh) | 一种在大晶格失配基底上异质外延生长锑化物半导体的方法 | |
| CN110416367A (zh) | 一种利用In-Ga合金蒸发源制备大面积均匀性CIGS薄膜太阳能电池的方法 | |
| US11982017B2 (en) | Transparent conductive oxide thin film and use thereof | |
| CN101834127A (zh) | 一种在蓝宝石衬底上制备高质量ZnO单晶薄膜的方法 | |
| CN104451867B (zh) | 一种制备高质量ZnMgBeO薄膜的方法 | |
| Hullavarad et al. | Homo-and hetero-epitaxial growth of hexagonal and cubic MgxZn1− x O alloy thin films by pulsed laser deposition technique | |
| CN1888127A (zh) | GaAs基InSb薄膜的分子束外延生长方法 | |
| Sun et al. | Influence of selenium evaporation temperature on the structure of Cu2ZnSnSe4 thin film deposited by a co-evaporation process | |
| CN102424951A (zh) | 一种制备半极性p型ZnO多晶薄膜的方法 | |
| CN117802574B (zh) | 畴外延生长γ-CuI薄膜的方法及γ-CuI薄膜 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |