CN116207600A - Deep ultraviolet laser for praseodymium-doped third harmonic generation - Google Patents

Deep ultraviolet laser for praseodymium-doped third harmonic generation Download PDF

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CN116207600A
CN116207600A CN202310138991.9A CN202310138991A CN116207600A CN 116207600 A CN116207600 A CN 116207600A CN 202310138991 A CN202310138991 A CN 202310138991A CN 116207600 A CN116207600 A CN 116207600A
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laser
praseodymium
doped
cavity end
end mirror
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徐斌
王冬
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Xiamen University
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Xiamen University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/1601—Solid materials characterised by an active (lasing) ion
    • H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
    • H01S3/1613—Solid materials characterised by an active (lasing) ion rare earth praseodymium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
    • H01S3/109—Frequency multiplication, e.g. harmonic generation

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

The invention discloses a deep ultraviolet laser for generating praseodymium doped third harmonic, which comprises: the first blue semiconductor laser and the second blue semiconductor laser emit pump laser at the same time, the pump laser is focused by the first focusing lens and the second focusing lens and then is transmitted by the first laser end mirror and the second laser end mirror respectively and is incident into the first praseodymium-doped laser material, the first praseodymium-doped laser material absorbs two pump lasers to obtain gain, praseodymium-doped visible light fundamental laser is generated in the laser cavity, the praseodymium-doped visible light fundamental laser is subjected to frequency multiplication by the frequency multiplication crystal to obtain frequency multiplication laser, the frequency multiplication laser and residual praseodymium-doped visible light fundamental laser are subjected to frequency summation crystal and frequency multiplication and then are output from the second laser end mirror, and then the third harmonic deep ultraviolet laser is output after the lasers with other wavelengths are filtered by the filter. The invention provides a simple and effective scheme for generating short-wavelength deep ultraviolet laser.

Description

Deep ultraviolet laser for praseodymium-doped third harmonic generation
Technical Field
The invention relates to the field of deep ultraviolet lasers, in particular to a deep ultraviolet laser generated by praseodymium-doped third harmonic.
Background
The wavelength range of the light wave is divided, the short wavelength of 200nm-280nm is commonly called as a 'deep ultraviolet' wave band, and the laser wavelength of the wave band is very short and has very small diffraction limit, so that the resolution is high, and the method has important application value in various fields such as Raman spectrum, photoetching, microscopic imaging, optical detection, sterilization, life science and the like. Although shorter wavelengths less than 200nm clearly have higher resolution, such as vacuum ultraviolet and extreme ultraviolet, the generation of wavelengths less than 200nm is more difficult and vacuum ultraviolet wavelengths are rapidly absorbed by oxygen in air to form ozone, so the deep ultraviolet band is the best band for these applications and can be conveniently used. 213nm deep ultraviolet lasers have been brought close to the shortest wavelength limit of the deep ultraviolet band, and their application value is self-evident.
Currently, 213nm deep ultraviolet laser has been reported in several publications, for example, in 2000, U.S. patent to Gruen et al, university of Chicago, U.S. Pat. No. 5, using a high energy 1064nm Nd: YAG pulse laser as the fundamental wave, and converting to 213nm deep ultraviolet pulse laser [1 ] by fifth harmonic frequency]Namely, the 1064nm laser is multiplied by frequency (namely fourth harmonic) to obtain 266nm deep ultraviolet laser, and the 1064nm and 266nm are summed to obtain 213nm deep ultraviolet laser, which is the most common method for developing 213nm deep ultraviolet laser at present. Also, for example, in 2004, japanese, sakuma et al, japan, et al, have Nd-doped 3+ The 266nm deep ultraviolet continuous wave laser obtained by the 1064nm near infrared continuous wave laser and the fourth harmonic wave thereof is subjected to sum frequency to obtain 213nm continuous wave laser (shown in a schematic device diagram in fig. 1). Since the peak power of the continuous wave is low, in order to improve the frequency conversion efficiency, sakuma et al used a resonance enhancement technique to precisely control the laser cavity to effectively generate 213nm deep ultraviolet laser output, which is a common means of obtaining continuous wave laser by frequency conversion. However, the entire 213nm deep ultraviolet laser system is extremely complex, whether it is pulsed or continuous wave operation, with consequent problems such as bulkiness, inefficiency, high cost, poor stability, and difficult maintenance. In 2019, japanese scholars Kaneda et al adopted a more complex system (as shown in FIG. 2), i.e., thulium doped (Tm 3+ ) Is a 1.9 micron near infrared laser amplifier with erbium (Er) 3+ ) Is subjected to sum frequency to obtain 852nm near infrared laser by a 1.5-micrometer near infrared laser amplifier, and then the 852nm near infrared laser is multipliedFrequency, generating 426nm visible light laser, and finally performing frequency multiplication on the 426nm visible light laser to finally obtain 213nm deep ultraviolet laser; this more complex system limits the practical application of the 213nm deep ultraviolet laser to a large extent. In summary, deep ultraviolet lasers at or near 213nm are currently obtained using five or more harmonics, with the exception of the mode of operation, which is continuous wave mode, and the pulse mode.
Disclosure of Invention
In the prior art, near infrared laser is adopted as a fundamental wave, and therefore, the invention aims to provide a praseodymium-doped third harmonic deep ultraviolet laser adopting visible light as the fundamental wave, which can solve the problems.
The invention provides a deep ultraviolet laser for generating praseodymium-doped third harmonic, which comprises:
the laser comprises a first blue light semiconductor laser, a second blue light semiconductor laser, a first focusing lens, a second focusing lens, a first laser cavity end mirror, a second laser cavity end mirror, a third laser cavity end mirror, a fourth laser cavity end mirror, a first praseodymium-doped laser material, a frequency doubling crystal, a sum frequency crystal and a filter;
the incident light path of the first blue light semiconductor laser is sequentially provided with the first focusing lens, a first laser cavity end mirror, a first praseodymium-doped laser material and a second laser cavity end mirror; the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, a second laser cavity end mirror, a first praseodymium-doped laser material and a first laser cavity end mirror; the sum frequency crystal and the third laser cavity end mirror are sequentially arranged on the reflection light path of the second laser cavity end mirror; the frequency doubling crystal and the fourth laser cavity end mirror are sequentially arranged on a first reflection optical path of the third laser cavity end mirror; the second reflection light path of the third laser cavity end face mirror is sequentially provided with the sum frequency crystal, the second laser cavity end face mirror and the filter; the incident light path of the first blue light semiconductor laser, the incident light path of the second blue light semiconductor laser, the reflecting light path of the second laser cavity end mirror, the first reflecting light path of the third laser cavity end mirror and the second reflecting light path of the third laser cavity end mirror form a laser cavity light path;
the first blue semiconductor laser and the second blue semiconductor laser emit pump laser at the same time, the pump laser is focused by the first focusing lens and the second focusing lens respectively and then is transmitted by the first laser end mirror and the second laser end mirror respectively and is incident into the first praseodymium-doped laser material, the first praseodymium-doped laser material absorbs two beams of pump light and then carries out gain conversion to obtain praseodymium-doped visible light fundamental wave laser, the praseodymium-doped visible light fundamental wave laser is transmitted along a light path in a light path of the annular laser cavity, in-process praseodymium-doped visible light fundamental wave laser is multiplied by the frequency doubling crystal to obtain frequency doubling laser, the frequency doubling laser and the praseodymium-doped visible light fundamental wave laser are output from the second laser end mirror after being subjected to frequency summation by the frequency summation crystal, and then the lasers with other wavelengths are filtered by the filter to output deep ultraviolet laser.
The first laser cavity end mirror is a plane mirror, and a coating film of the first laser cavity end mirror can be high in transmittance to the pumping laser wavelength and high in reflection to the praseodymium-doped visible light fundamental laser.
In addition, the film coating of the first laser cavity end mirror can be directly prepared at the front end of the first praseodymium-doped laser material, which is beneficial to reducing loss and improving the output laser performance.
The second laser cavity end mirror is a curved concave mirror, and a coating film of the second laser cavity end mirror can be used for reflecting the praseodymium-doped visible light fundamental wave laser and transmitting the deep ultraviolet laser.
The third laser cavity end mirror is a curved mirror, and a coating film of the third laser cavity end mirror can be highly reflected to the praseodymium-doped visible light fundamental laser and the frequency multiplication laser.
The fourth laser cavity end mirror is any one of a plane mirror and a concave mirror, and the coating film of the fourth laser cavity end mirror can be highly reflected to the praseodymium-doped visible light fundamental laser and the frequency multiplication laser.
The frequency doubling crystal is an LBO crystal and is used for carrying out frequency doubling on the praseodymium-doped visible light fundamental laser, and the coating film is high-transmittance on the praseodymium-doped visible light fundamental laser and the frequency doubling laser; the sum frequency crystal is a BBO crystal and is used for sum frequency of the praseodymium-doped visible light fundamental laser and the frequency doubling laser, and the coating film is high-transmittance to the praseodymium-doped visible light fundamental laser, the frequency doubling laser and the deep ultraviolet laser.
In addition, the incident light path of the first blue light semiconductor laser may further be provided with the first focusing lens, the first laser cavity end mirror, the first praseodymium-doped laser material, the frequency doubling crystal, the sum frequency crystal, the second laser cavity end mirror and the filter in sequence.
In addition, the laser cavity includes: a fifth plane mirror and a second praseodymium-doped laser material; and the coating film of the fifth plane mirror is used for high reflecting the praseodymium-doped visible light fundamental laser and high transmitting the frequency multiplication laser.
In addition, an incident light path of the first blue light semiconductor laser is sequentially provided with the first focusing lens, a first laser cavity end face mirror, a first praseodymium-doped laser material, a frequency doubling crystal, a fifth plane mirror, a frequency summation crystal, a fourth laser cavity end face mirror and a filter;
the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, the second praseodymium-doped laser material, the fifth plane mirror and the third laser cavity end mirror.
The invention has the beneficial effects that:
first, praseodymium-doped visible light fundamental wave laser is selected to be in visible light wavelength, so that 213nm deep ultraviolet laser can be generated only through third harmonic. The system has the advantages of simplicity, compact structure, low cost and the like; particularly in the deep ultraviolet lasers that achieve "continuous wave" operation, there are significant advantages in both efficiency and system compactness, and even the laser size can be optimized to be "palm-top".
Secondly, the film coating which is high in transmission to the wavelength of the pumping laser and high in reflection to the praseodymium-doped visible light fundamental wave laser is directly prepared on the praseodymium-doped laser material, so that the whole structure can be slightly reduced, the loss is reduced, and the output laser performance (namely, the power and the efficiency) can be improved. Through the use of preparing various coating films and nonlinear crystals, the laser wavelength conversion can be realized in a laser cavity, and the simple and efficient generation of deep ultraviolet laser is realized.
Thirdly, the laser can be further expanded to praseodymium-doped other fundamental wave wavelengths and third harmonic waves thereof to generate deep ultraviolet laser, and can solve the application in different scenes.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, it being obvious that the drawings in the following description are only some embodiments of the invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a simplified deep ultraviolet laser implementation structure in the background of the invention.
Fig. 2 is a schematic diagram of a simplified deep ultraviolet laser implementation device in the background of the invention.
Fig. 3 is an overall structure diagram of a deep ultraviolet laser according to a first embodiment of the present invention.
FIG. 4 is a graph showing the spectrum of a deep ultraviolet laser continuous wave laser according to an embodiment of the present invention.
Fig. 5 is a view of a deep ultraviolet laser spot in accordance with an embodiment of the present invention.
Fig. 6 is a block diagram of an overall deep ultraviolet laser according to a second embodiment of the present invention.
Fig. 7 is an overall structure diagram of a deep ultraviolet laser according to a third embodiment of the present invention.
Fig. 8 is a block diagram of a deep ultraviolet laser according to a fourth embodiment of the present invention.
Fig. 9 is an overall structure diagram of a deep ultraviolet laser in a fifth embodiment of the present invention.
Detailed Description
For the convenience of understanding by those skilled in the art, the structure of the present invention will now be described in further detail with reference to the accompanying drawings.
Example 1
As shown in fig. 3, an embodiment of the present invention provides a deep ultraviolet laser for generating praseodymium-doped third harmonic, including: the laser comprises a first blue light semiconductor laser, a second blue light semiconductor laser, a first focusing lens, a second focusing lens, a first laser cavity end mirror, a second laser cavity end mirror, a third laser cavity end mirror, a fourth laser cavity end mirror, a first praseodymium-doped laser material, a frequency doubling crystal, a sum frequency crystal and a filter;
the incident light path of the first blue light semiconductor laser is sequentially provided with the first focusing lens, a first laser cavity end mirror, a first praseodymium-doped laser material and a second laser cavity end mirror; the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, a second laser cavity end mirror, a first praseodymium-doped laser material and a first laser cavity end mirror; the sum frequency crystal and the third laser cavity end mirror are sequentially arranged on the reflection light path of the second laser cavity end mirror; the frequency doubling crystal and the fourth laser cavity end mirror are sequentially arranged on a first reflection optical path of the third laser cavity end mirror; the second reflection light path of the third laser cavity end face mirror is sequentially provided with the sum frequency crystal, the second laser cavity end face mirror and the filter; the incident light path of the first blue light semiconductor laser, the incident light path of the second blue light semiconductor laser, the reflecting light path of the second laser cavity end mirror, the first reflecting light path of the third laser cavity end mirror and the second reflecting light path of the third laser cavity end mirror form a laser cavity light path;
the first blue semiconductor laser and the second blue semiconductor laser emit pump laser at the same time, the pump laser is focused by the first focusing lens and the second focusing lens respectively and then is transmitted by the first laser end mirror and the second laser end mirror respectively and is incident into the first praseodymium-doped laser material, the first praseodymium-doped laser material absorbs two beams of pump light and then carries out gain conversion to obtain praseodymium-doped visible light fundamental wave laser, the praseodymium-doped visible light fundamental wave laser is transmitted along a light path in a light path of the annular laser cavity, in-process praseodymium-doped visible light fundamental wave laser is multiplied by the frequency doubling crystal to obtain frequency doubling laser, the frequency doubling laser and the praseodymium-doped visible light fundamental wave laser are output from the second laser end mirror after being subjected to frequency summation by the frequency summation crystal, and then the lasers with other wavelengths are filtered by the filter to output deep ultraviolet laser.
The first laser cavity end mirror is a plane mirror, and a coating film of the first laser cavity end mirror can be high in transmittance to the pumping laser wavelength and high in reflection to the praseodymium-doped visible light fundamental laser.
The second laser cavity end mirror is a curved concave mirror, and a coating film of the second laser cavity end mirror can be used for reflecting the praseodymium-doped visible light fundamental wave laser and transmitting the deep ultraviolet laser.
The third laser cavity end mirror is a curved mirror, and a coating film of the third laser cavity end mirror can be highly reflected to the praseodymium-doped visible light fundamental laser and the frequency multiplication laser.
The fourth laser cavity end mirror is any one of a plane mirror and a concave mirror, and the coating film of the fourth laser cavity end mirror can be highly reflected to the praseodymium-doped visible light fundamental laser and the frequency multiplication laser.
The frequency doubling crystal is an LBO crystal and is used for carrying out frequency doubling on the praseodymium-doped visible light fundamental laser, and the coating film is high-transmittance on the praseodymium-doped visible light fundamental laser and the frequency doubling laser; the sum frequency crystal is a BBO crystal and is used for sum frequency of the praseodymium-doped visible light fundamental laser and the frequency doubling laser, and the coating film is high-transmittance to the praseodymium-doped visible light fundamental laser, the frequency doubling laser and the deep ultraviolet laser.
In this embodiment, all-solid-state praseodymium-doped red light (about 640 nm) is used as fundamental laser, frequency multiplication is performed to generate 320nm ultraviolet laser, and the sum frequency of the 640nm fundamental laser and 320nm frequency multiplication ultraviolet laser, namely third harmonic, is performed, so that 213nm deep ultraviolet laser can be generated. The premise of obtaining 213nm deep ultraviolet laser is to obtain 640nm red light and frequency multiplication 320nm ultraviolet laser thereof, and fundamental wave 640nm laser is easier to directly obtain with high power and high efficiency through praseodymium-doped laser. Therefore, by constructing a proper '640 nm+320nm' sum frequency laser cavity, 213nm deep ultraviolet laser can be realized, and the sum frequency laser cavity can have different designs, so long as the high-efficiency overlapping of fundamental wave 640nm laser and frequency multiplication 320nm laser in BBO crystal can be ensured, and the small spot size is provided, thereby forming high power density and being beneficial to improving conversion efficiency.
The 213nm laser spectrum measured with an Ocean Optics spectrometer USB4000 (range 177nm-896 nm) with a peak wavelength of 213.2nm is shown in FIG. 4. The 213.2nm deep ultraviolet laser spot pattern measured with a Soxhlet (Thorlabs) BC106-UV CCD (190 nm-350nm range) is shown in FIG. 5, which demonstrates experimentally that the present invention can achieve deep ultraviolet laser generation.
It should be noted that, in this embodiment, only 213nm deep ultraviolet laser is taken as an example to specifically show the scheme proposed in this patent, but in practice, the scheme (i.e. praseodymium-doped third harmonic) can be further extended to the wavelength generation of other fundamental wavelengths of praseodymium-doped and third harmonic thereof, for example:
(1) After pump laser is generated by blue semiconductor laser, the pump laser is converted into praseodymium-doped laser with 720nm wavelength through praseodymium-doped laser material, and the third harmonic is deep ultraviolet laser with 240nm wavelength;
(2) After pump laser is generated by blue semiconductor laser, the pump laser is converted into orange light with praseodymium-doped wavelengths of 607nm and 604nm through praseodymium-doped laser materials, and the third harmonic of the orange light is deep ultraviolet laser with wavelengths of 202.3nm and 201nm respectively;
(2) After pump laser is generated by blue semiconductor laser, the pump laser is converted into green light with the wavelength of 522nm by praseodymium-doped laser material, and the third harmonic is laser with the wavelength of 174 nm.
Example two
As shown in fig. 6, an embodiment of the present invention provides a deep ultraviolet laser device generated by praseodymium-doped third harmonic, where on the basis of the first embodiment, a film coating of the first laser cavity end mirror may be directly prepared at the front end of the first praseodymium-doped laser material, so as to reduce loss in the laser transmission process.
In the embodiment, the whole structure can be slightly further reduced, and the loss is reduced, so that the power and the generation efficiency of the deep ultraviolet laser are improved.
Example III
As shown in fig. 7, the embodiment of the invention provides a deep ultraviolet laser generated by praseodymium-doped third harmonic, which reduces the second blue semiconductor laser, the second focusing lens, the third laser cavity end mirror and the fourth laser cavity end mirror on the basis of the first embodiment.
In addition, the incident light path of the first blue light semiconductor laser may further be provided with the first focusing lens, the first laser cavity end mirror, the first praseodymium-doped laser material, the frequency doubling crystal, the sum frequency crystal, the second laser cavity end mirror and the filter in sequence.
In this embodiment, praseodymium doped third harmonic composed of two end mirrors generates a deep ultraviolet laser device. The structure is suitable for pulse third harmonic laser with large pulse energy, and has very low conversion efficiency for continuous wave third harmonic.
Example IV
As shown in fig. 8, the embodiment of the invention provides a deep ultraviolet laser device generated by praseodymium-doped third harmonic, which is formed by adding a fifth plane mirror and a second praseodymium-doped laser material on the basis of the first embodiment; and the coating film of the fifth plane mirror is used for high reflecting the praseodymium-doped visible light fundamental laser and high transmitting the ultraviolet laser.
In addition, an incident light path of the first blue light semiconductor laser is sequentially provided with the first focusing lens, a first laser cavity end face mirror, a first praseodymium-doped laser material, a frequency doubling crystal, a fifth plane mirror, a frequency summation crystal, a fourth laser cavity end face mirror and a filter; the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, the second praseodymium-doped laser material, the fifth plane mirror and the third laser cavity end mirror.
In this embodiment, a schematic diagram of a praseodymium-doped third harmonic deep ultraviolet laser device is provided for a composite annular cavity. As shown in fig. 8, a fifth plane mirror 8 is added, and the film is high-reflection to the praseodymium-doped visible light fundamental laser and high-transmission to the frequency doubling laser, so that the praseodymium-doped visible light fundamental laser and the frequency doubling laser are converged at the third harmonic in the frequency summation crystal 6 and converted into the third harmonic deep ultraviolet laser to be output.
Example five
As shown in fig. 9, the embodiment of the invention provides a deep ultraviolet laser for generating praseodymium-doped third harmonic, which carries out third harmonic sum frequency on praseodymium-doped visible light fundamental laser and frequency doubling laser outside a laser cavity on the basis of the first embodiment. Namely 640nm visible light fundamental laser and 320nm frequency doubling laser are output from a laser cavity and then are injected into an outer cavity containing a sum frequency crystal BBO at the same time, and the scheme needs to adopt the resonance enhancement technology mentioned in the background technology.
In the embodiment, 640nm visible light fundamental laser can be obtained by a blue light semiconductor laser and praseodymium-doped laser material, the visible light fundamental laser can be obtained by a frequency doubling crystal to obtain frequency doubling laser, and the visible light fundamental laser and the frequency doubling laser are subjected to frequency summation at a frequency summation crystal outside a laser cavity to generate deep ultraviolet laser.
It should be noted that in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim. The word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. The invention may be implemented by means of hardware comprising several distinct elements, and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware. The use of the words first, second, third, etc. do not denote any order. These words may be interpreted as names.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms should not be understood as necessarily being directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.

Claims (10)

1. A deep ultraviolet laser for praseodymium-doped third harmonic generation, comprising: the laser comprises a first blue light semiconductor laser, a second blue light semiconductor laser, a first focusing lens, a second focusing lens, a first laser cavity end mirror, a second laser cavity end mirror, a third laser cavity end mirror, a fourth laser cavity end mirror, a first praseodymium-doped laser material, a frequency doubling crystal, a sum frequency crystal and a filter;
the incident light path of the first blue light semiconductor laser is sequentially provided with the first focusing lens, a first laser cavity end mirror, a first praseodymium-doped laser material and a second laser cavity end mirror; the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, a second laser cavity end mirror, a first praseodymium-doped laser material and a first laser cavity end mirror; the sum frequency crystal and the third laser cavity end mirror are sequentially arranged on the reflection light path of the second laser cavity end mirror; the frequency doubling crystal and the fourth laser cavity end mirror are sequentially arranged on a first reflection optical path of the third laser cavity end mirror; the second reflection light path of the third laser cavity end face mirror is sequentially provided with the sum frequency crystal, the second laser cavity end face mirror and the filter; the incident light path of the first blue light semiconductor laser, the incident light path of the second blue light semiconductor laser, the reflecting light path of the second laser cavity end mirror, the first reflecting light path of the third laser cavity end mirror and the second reflecting light path of the third laser cavity end mirror form a laser cavity;
the first blue semiconductor laser and the second blue semiconductor laser emit pump laser at the same time, the pump laser is focused by the first focusing lens and the second focusing lens and then is transmitted by the first laser end mirror and the second laser end mirror respectively, the first praseodymium-doped laser material absorbs two pump lasers to obtain gain, praseodymium-doped visible light fundamental laser is generated in the laser cavity, praseodymium-doped visible light fundamental laser is transmitted in the laser cavity, in-process praseodymium-doped visible light fundamental laser is multiplied by the frequency doubling crystal to obtain frequency doubling laser, the frequency doubling laser and residual praseodymium-doped visible light fundamental laser are output from the second laser end mirror after being subjected to frequency summation by the frequency summation crystal, and then the third harmonic deep ultraviolet laser is output after other wavelengths of laser are filtered by the filter.
2. The deep ultraviolet laser of claim 1, wherein the first laser cavity end mirror is a plane mirror, and the coating film is highly transparent to the pump laser wavelength and highly reflective to the praseodymium-doped visible fundamental laser.
3. The deep ultraviolet laser produced by praseodymium-doped third harmonic of claim 1 or 2, wherein the coating of the first laser cavity end mirror can be directly prepared at the front end of the first praseodymium-doped laser material, which is beneficial to reducing loss and improving the performance of output laser. .
4. The deep ultraviolet laser device generated by praseodymium-doped third harmonic of claim 1, wherein the second laser cavity end mirror is a curved concave mirror, and a coating film of the second laser cavity end mirror can be highly reflected to the praseodymium-doped visible light fundamental laser and is highly transparent to the deep ultraviolet laser.
5. The deep ultraviolet laser of claim 1, wherein the third laser cavity end mirror is a curved mirror, and the coating is highly reflective to the praseodymium-doped visible fundamental laser and the frequency-doubled laser.
6. The deep ultraviolet laser device generated by praseodymium-doped third harmonic of claim 1, wherein the fourth laser cavity end mirror is any one of a plane mirror and a concave mirror, and a coating film thereof can be highly reflected to the praseodymium-doped visible light fundamental laser and the frequency doubling laser.
7. The deep ultraviolet laser device generated by praseodymium-doped third harmonic of claim 1, wherein the frequency doubling crystal is an LBO crystal and is used for doubling the frequency of the praseodymium-doped visible light fundamental laser, and the coating is high-transmittance to the praseodymium-doped visible light fundamental laser and the frequency doubling laser; the sum frequency crystal is a BBO crystal and is used for sum frequency of the praseodymium-doped visible light fundamental laser and the frequency doubling laser, and the coating film is high-transmittance to the praseodymium-doped visible light fundamental laser, the frequency doubling laser and the deep ultraviolet laser.
8. The deep ultraviolet laser device generated by praseodymium-doped third harmonic of claim 1, wherein the incident light path of the first blue light semiconductor laser device can be further provided with the first focusing lens, the first laser cavity end mirror, the first praseodymium-doped laser material, the frequency doubling crystal, the sum frequency crystal, the second laser cavity end mirror and the filter in sequence.
9. The deep ultraviolet laser of claim 1, wherein the ring laser cavity comprises: a fifth plane mirror and a second praseodymium-doped laser material; and the coating film of the fifth plane mirror is used for high reflecting the praseodymium-doped visible light fundamental laser and high transmitting the frequency multiplication laser.
10. The deep ultraviolet laser produced by praseodymium-doped third harmonic of claim 1 or 9, wherein an incident light path of the first blue light semiconductor laser is provided with the first focusing lens, a first laser cavity end mirror, a first praseodymium-doped laser material, a frequency doubling crystal, a fifth plane mirror, a sum frequency crystal, a fourth laser cavity end mirror and a filter in sequence;
the incident light path of the second blue light semiconductor laser is sequentially provided with the second focusing lens, the second praseodymium-doped laser material, the fifth plane mirror and the third laser cavity end mirror.
CN202310138991.9A 2023-02-20 2023-02-20 Deep ultraviolet laser for praseodymium-doped third harmonic generation Pending CN116207600A (en)

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